CN1154470A - Infrared light source - Google Patents
Infrared light source Download PDFInfo
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- CN1154470A CN1154470A CN 96111435 CN96111435A CN1154470A CN 1154470 A CN1154470 A CN 1154470A CN 96111435 CN96111435 CN 96111435 CN 96111435 A CN96111435 A CN 96111435A CN 1154470 A CN1154470 A CN 1154470A
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- infrared light
- panel
- light supply
- heating element
- oxide layer
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Abstract
An infrared light source used in spectrometers including an infrared range, a Fourier Transform Infrared Spectroscope (FTIR), etc. The infrared light source is composed of a panel made of sintered silicon nitride plates, a heating element made of metal and embedded in the panel, and a pair of conducting lines for supplying electricity to the heating element. The infrared light is emitted homogeneously from the flat surface of the panel, as compared to a conventional infrared light source using a metal filament in which infrared light is emitted inhomogeneously. It is preferred to form a silicon oxide layer on a surface of the panel to prevent initial change in the infrared emitting characteristic.
Description
The present invention relates to a kind of energy and produce the light source that can be used for through the infrared light of outer spectrometer, fourier transform infrared beamsplitter optical instruments such as (FTIR).
Traditional infrared light supply adopts coiling metal (being generally Kanthal) filament.But the light that incandescent coiling filament sends is inhomogeneous, thereby makes energy density generally speaking low, thereby makes the general power of light source little.If the slit of spectrometer is placed on focus place with a catoptron of the optical convergence of light source, then just mirrors coiling filament image clearly on the slit.Therefore for reducing infrared photoemissive unevenness, usually the slit is placed in the position of off-focal a little, but the capacity usage ratio of this meeting deterioration light source.Another shortcoming of coiling filament is to use often progressively distortion in the process, thereby further reduces emission density and reduction of service life.
The present invention provides a kind of new infrared light supply for addressing the above problem, its emissive power height, the serviceable life that has improved emission uniformity and grow.
Infrared light supply of the present invention is characterised in that it comprises: one by the silicon nitride (Si through sintering
3N
4) make and have the panel of plane surface, and heating element that be made of metal and in panel.
Characteristics of the present invention are, also embedding couple of conductor makes it produce Joule heat in order to electric current is added in the flat board on the heating element.In the case, heating element is an one dimension, and the heating element that is embedded in the panel should be longer.In example, heating element is converted into pectination therein.
Another characteristics of the present invention are that heating element is with being placed in dull and stereotyped outer induction heating equipment heating.In the case, heating element is two-dimentional.
Heating element in panel during by electric current or induction heating heat just pass on the panel, so panel just sends uniform infrared light from its smooth surface.Evenly emit because infrared light is the flat surfaces from panel, thereby the picture of infrared light supply can just in time focus on spectrometer or similarly adopts on the slit of device in slit.Can provide stronger infrared light to analysis part like this, thereby recently improve the infrared analysis process with higher S/N (noise).
Even silicon nitride its chemical property and mechanical property under up to about 1350 ℃ temperature also are stable.In other words, the silicon nitride plate of infrared light supply of the present invention neither decomposes also indeformable under this temperature.Therefore use infrared light supply of the present invention, heating element can be heated to high temperature, can improve luminosity factor.
Silicon nitride is deceived, thereby the emissivity height of panel surface, in other words, and the capacity usage ratio height of infrared light supply of the present invention.
Panel is before using, and its flat surfaces is preferably coated silicon oxide layer.If panel surface does not have silicon oxide layer, when then panel in use was heated, monox can accumulate in panel surface during beginning, thereby changed panel surface radiation emitted spectrum.On the contrary, when there is silicon oxide layer on the panel surface at the very start, even the silicon nitride plate also can be launched the radiation of spectrum-stable at the use initial stage.
A way that forms silicon oxide layer is silicate solutions to be coated in the silicon nitride panel surface dry then.Preferably make it aging the energising of silicon nitride panel after the oven dry, oxide layer is settled out.
Describe with regard to one embodiment of the present of invention below, from this explanation, can recognize other characteristics of the present invention and other details.
Fig. 1 is the skeleton view of one embodiment of the invention infrared light supply.
Fig. 2 shows the structure of Fig. 1 infrared light supply.
Fig. 3 is the response curve (2) that the power spectrum curve (1) of the infrared light launched of one embodiment of the invention infrared light supply and tradition adopt infrared light supply that may the tal fibre filament.
Fig. 4 is the power spectrum curve of the infrared light launched after treatment of panel surface.
Fig. 5 is the power spectrum curve of the infrared light that sends of undressed panel.
Fig. 1 and Fig. 2 illustrate the infrared light supply of one embodiment of the invention, and wherein light source 10 is made of panel 11, heating element 12, pair of lead wires pin 13 and pair of lead wires 14.
The manufacture process of the infrared light supply 10 of present embodiment is as follows.At first, prepare a pair of silicon nitride green plate 11a and 11b.Silicon nitride green plate 11a goes up and prints the well heater metal therein, and will go between 14 and lead pin be arranged on the plate.Well heater 12 forms between two lead-in wires 14 with the one dimension form, and is printed on the little position of silicon nitride plate 11a and 11b one end.For example, under the situation of Fig. 1, heating element is placed in 3.6 millimeters * 10 millimeters position of 4.7 millimeters * 54.6 millimeters silicon nitride plate one ends.For improving the heat that generates, linear heating element 12 is got pectination.
After well heater 12, lead-in wire 14 and lead pin 13 are clipped between a pair of silicon nitride green plate 11a and the 11b, with they sintering.The sintered silicon nitride plate has various methodologies.Wherein a kind of method is a pressure sintering, be about to green sheet 11a that each parts clips and 11b under the pressure of about 235 kg/cm and about 1850 ℃ temperature at nitrogen (N
2) about 0.5～2 hour of heating in the atmosphere.Another kind method is a non-pressure process, is about to green sheet 11a and 11b and heats about 4 hours in blanket of nitrogen under about 1650 ℃ under normal pressure (1 atmospheric pressure).Also above-mentioned two kinds of methods can be mixed and use.The present invention also can use other sintering method.After the green sheet sintering is crossed, heating element 12 is sealed in dull and stereotyped 11 fully.
When using infrared light supply 10, electric current 14 is heated on the element 12 by going between from lead pin 13, so heating element produces Joule heat.Heat passes to panel 11, and at this moment the surface emitting of panel 11 embedding heating element 12 below it goes out infrared light.Because panel 11 has an even surface and almost is thermally equivalent, thereby infrared light almost is even emission from panel surface.
Fig. 3 has contrasted the power spectrum curve of the infrared light that the infrared light supply 10 of present embodiment launches and has adopted the response curve of infrared light supply that may the tal fibre filament.The temperature of embodiment of the invention heating element 12 is got 1200 ℃, and the traditional heating element is then got 1100 ℃.As can be seen from Figure 3, the luminosity factor of present embodiment infrared light supply 10 infrared light that makes emission much better than more than the traditional infrared light source.
Because light-emitting area has higher luminosity factor and homogeneity, thereby strengthened by the infrared light in spectrometer slit, thus make various infrared analysiss can believe at height/make an uproar than under carry out.
Durability test shows, the life-span of present embodiment infrared light supply 10 when heating element 12 adopts 1200 ℃ greater than 5000 hours.This life-span of generally bearing the tal fibre filament more than the traditional infrared light source is long, and this life-span is about 2000 hours when serviceability temperature is 1200 ℃.
If without oxidation, silicon nitride surface progressively forms oxide layer when then being heated to above-mentioned high temperature when adopting the infrared light supply of silicon nitride to begin.Because the formation speed of oxide layer is slow, thereby the stable oxide layer of silicon nitride plate 11 surface formation will be through the long time.Therefore, on the other hand, the infrared spectrum instability that panel 11 is launched.So preferably counter plate 11 is handled in advance, form thin and stable silicon oxide layer on its surface.
Forming the easiest method of this stable silicon oxide layer is that silicate (for example sodium silicate) solution is coated on the panel surface of sintering and cures then.When adopting sodium silicate, the condition of curing is that it was being heated about 1 hour in normal atmosphere under about 400 ℃.So handle the silicon oxide layer quite stable that makes on infrared light supply 10 panels 11.Thickness of oxide layer is advisable with 3～20 microns, but more preferably greater than 10 microns.
Fig. 4 and Fig. 5 surface-treated effect as can be seen more once.Fig. 4 is the power spectrum curve of the infrared light launched of surface-treated panel, and Fig. 5 is the response curve of unprocessed panel, returns the initial power spectral curve of unprocessed panel among the figure, so that relatively.Power spectrum per hour obtains in the various time after the infrared light supply energising.As seen from Figure 5, under the undressed situation of panel, wave number is at 850～900 centimetres
-1Near the variation of its absorption band of silicon nitride very big, and as the treated situation in figure panel surface under, power spectrum is stablized.
Under the treated situation of panel surface, as shown in Figure 4, relative luminosity factor concentrates on 1050～1100 centimetres because of silicon nitride
-1Near the absorption band wave number and situation about descending sees too clearly after panel was switched on about one day, but after this, power spectrum settles out.This is because the oxide layer on panel 11 surfaces forms comprehensively, though thereby during beginning panel surface many pin holes or in uneven thickness are arranged, through one day aging again not allowing afterwards due to oxygen passes through.Under the undressed situation of panel, as shown in Figure 5, the power spectrum of launching is still unstable, and this mainly is in appearance after the energising 500 hours under the absorption band of silicon nitride and monox.Result relatively shows, panel 11 can make infrared light supply through surface treatments power spectrum is just stable when bringing into use.
Claims (10)
1. infrared light supply comprises:
A panel is made by the silicon nitride through sintering, and it has an even surface, and uses for the emission infrared light; With
A heating element is made of metal, and is embedded under the smooth surface of panel.
2. infrared light supply as claimed in claim 1 is characterized in that it also comprises the pair of conductive circuit, in order to send electric current to heating element.
3. infrared light supply as claimed in claim 2 is characterized in that heating element is made by the metal wire of getting pectination.
4. infrared light supply as claimed in claim 2 is characterized in that, is formed with silicon oxide layer on the flat surfaces of panel.
5. make a kind of method of infrared light supply, it is characterized in that it comprises the following steps:
Produce a subassembly, be about to a metallic heating element and pair of conductive circuit and be placed between a pair of silicon nitride green plate; With
With the subassembly sintering, produce the panel of infrared light supply.
6. the method for manufacturing infrared light supply as claimed in claim 5 is characterized in that, it also is included in the step that forms silicon oxide layer on the flat surfaces of the panel of sintering.
7. the method for manufacturing infrared light supply as claimed in claim 6 is characterized in that, it also comprises the panel step that monox on the counter plate flat surfaces wears out of switching on.
8. the method for manufacturing infrared light supply as claimed in claim 5 is characterized in that it also comprises the following steps:
On the panel surface of sintering, coating silicate solutions; With
Panel cured make its drying.
9. the method for manufacturing infrared light supply as claimed in claim 6 is characterized in that, described silicate solutions is a sodium silicate solution.
10. the method for manufacturing infrared light supply as claimed in claim 9 is characterized in that, it also comprises makes the silicon oxide layer on the panel flat surface aging the panel energising.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP248553/95 | 1995-08-31 | ||
| JP248553/1995 | 1995-08-31 | ||
| JP24855695A JP3529508B2 (en) | 1995-09-01 | 1995-09-01 | Press roller |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1154470A true CN1154470A (en) | 1997-07-16 |
| CN1070608C CN1070608C (en) | 2001-09-05 |
Family
ID=17179925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 96111435 Expired - Lifetime CN1070608C (en) | 1995-08-31 | 1996-08-31 | Infrared light source |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3529508B2 (en) |
| CN (1) | CN1070608C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101237730B (en) * | 2008-02-27 | 2010-07-21 | 厦门大学 | Infrared light source and its preparing method |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100483255C (en) * | 2004-09-01 | 2009-04-29 | 中国科学院电子学研究所 | Infrared light source based on microelectronic mechanical system technique and its preparing method |
| JP2008285307A (en) * | 2007-05-21 | 2008-11-27 | Seiko Epson Corp | Automatic feeder and recording device |
| JP5566358B2 (en) * | 2011-09-21 | 2014-08-06 | 沖電気工業株式会社 | Medium transport apparatus and medium transaction apparatus |
| JP6191314B2 (en) * | 2013-08-02 | 2017-09-06 | セイコーエプソン株式会社 | Medium conveying apparatus and recording apparatus |
| JP2018053989A (en) * | 2016-09-28 | 2018-04-05 | Ntn株式会社 | Chain guide |
-
1995
- 1995-09-01 JP JP24855695A patent/JP3529508B2/en not_active Expired - Fee Related
-
1996
- 1996-08-31 CN CN 96111435 patent/CN1070608C/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101237730B (en) * | 2008-02-27 | 2010-07-21 | 厦门大学 | Infrared light source and its preparing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1070608C (en) | 2001-09-05 |
| JPH0971345A (en) | 1997-03-18 |
| JP3529508B2 (en) | 2004-05-24 |
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