CN115442722A - 鳍片结构扬声器及其形成方法 - Google Patents
鳍片结构扬声器及其形成方法 Download PDFInfo
- Publication number
- CN115442722A CN115442722A CN202110619383.0A CN202110619383A CN115442722A CN 115442722 A CN115442722 A CN 115442722A CN 202110619383 A CN202110619383 A CN 202110619383A CN 115442722 A CN115442722 A CN 115442722A
- Authority
- CN
- China
- Prior art keywords
- fin
- speaker
- piezoelectric layer
- fin structure
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000005538 encapsulation Methods 0.000 claims description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 3
- 230000008859 change Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 91
- 230000008569 process Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/02—Loudspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Abstract
Description
Claims (32)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110619383.0A CN115442722A (zh) | 2021-06-03 | 2021-06-03 | 鳍片结构扬声器及其形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110619383.0A CN115442722A (zh) | 2021-06-03 | 2021-06-03 | 鳍片结构扬声器及其形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN115442722A true CN115442722A (zh) | 2022-12-06 |
Family
ID=84240269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110619383.0A Pending CN115442722A (zh) | 2021-06-03 | 2021-06-03 | 鳍片结构扬声器及其形成方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN115442722A (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102969353A (zh) * | 2011-09-01 | 2013-03-13 | 台湾积体电路制造股份有限公司 | 多鳍片器件及其制造方法 |
US20150380241A1 (en) * | 2014-06-26 | 2015-12-31 | Semiconductor Manufacturing International (Shanghai) Corporation | Fin field-effct transistor and fabrication method thereof |
US20200279931A1 (en) * | 2017-12-27 | 2020-09-03 | Intel Corporation | Reduced electric field by thickening dielectric on the drain side |
US20210118985A1 (en) * | 2019-10-18 | 2021-04-22 | Qualcomm Incorporated | Circuits employing on-diffusion (od) edge (ode) dummy gate structures in cell circuit with increased gate dielectric thickness to reduce leakage current |
CN112885902A (zh) * | 2019-11-30 | 2021-06-01 | 英特尔公司 | 具有双厚度栅极电介质的场效应晶体管 |
-
2021
- 2021-06-03 CN CN202110619383.0A patent/CN115442722A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102969353A (zh) * | 2011-09-01 | 2013-03-13 | 台湾积体电路制造股份有限公司 | 多鳍片器件及其制造方法 |
US20150380241A1 (en) * | 2014-06-26 | 2015-12-31 | Semiconductor Manufacturing International (Shanghai) Corporation | Fin field-effct transistor and fabrication method thereof |
US20200279931A1 (en) * | 2017-12-27 | 2020-09-03 | Intel Corporation | Reduced electric field by thickening dielectric on the drain side |
US20210118985A1 (en) * | 2019-10-18 | 2021-04-22 | Qualcomm Incorporated | Circuits employing on-diffusion (od) edge (ode) dummy gate structures in cell circuit with increased gate dielectric thickness to reduce leakage current |
CN112885902A (zh) * | 2019-11-30 | 2021-06-01 | 英特尔公司 | 具有双厚度栅极电介质的场效应晶体管 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
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TA01 | Transfer of patent application right |
Effective date of registration: 20240416 Address after: Building 6, Hongchuang Technology Center, Qiankeng Community, Fucheng Street, Longhua District, Shenzhen City, Guangdong Province, 518110, 610701801 Applicant after: SHENZHEN SHENGJIALI ELECTRONICS CO.,LTD. Country or region after: China Address before: Room 28, Room 404, Building D, Guangzhou Airport Center, No. 1, Lvgang 3rd Street, Huadu District, Guangzhou City, Guangdong Province, 510805 (Airport Huadu) Applicant before: Guangzhou Leyi Investment Co.,Ltd. Country or region before: China |
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TA01 | Transfer of patent application right |