CN115435671B - Method for detecting uniformity and thickness of copper plating seed layer applied to solar cell - Google Patents
Method for detecting uniformity and thickness of copper plating seed layer applied to solar cell Download PDFInfo
- Publication number
- CN115435671B CN115435671B CN202211197313.1A CN202211197313A CN115435671B CN 115435671 B CN115435671 B CN 115435671B CN 202211197313 A CN202211197313 A CN 202211197313A CN 115435671 B CN115435671 B CN 115435671B
- Authority
- CN
- China
- Prior art keywords
- seed layer
- copper seed
- uniformity
- copper
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 313
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 313
- 239000010949 copper Substances 0.000 title claims abstract description 313
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000007747 plating Methods 0.000 title claims abstract description 26
- 239000002243 precursor Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000012360 testing method Methods 0.000 claims abstract description 35
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 21
- 238000005259 measurement Methods 0.000 claims description 26
- 239000011521 glass Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/34—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring roughness or irregularity of surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a method for detecting uniformity and thickness of a copper plating seed layer applied to a solar cell, which comprises the following steps: providing a substrate and a solar cell precursor, and placing the substrate and the solar cell precursor in the same chamber; preparing copper seed layers on the substrate and the solar cell precursor respectively by adopting a physical vapor deposition process; testing the sheet resistance of the copper seed layer on the substrate; and judging the uniformity of the copper seed layer on the substrate according to the magnitude relation between the sheet resistance of the copper seed layer on the substrate and the preset sheet resistance value, so as to judge the uniformity of the copper seed layer on the solar cell precursor. And when the uniformity of the copper seed layer on the solar cell precursor is qualified, calculating the thickness of the copper seed layer on the solar cell precursor according to the quality of the copper seed layer on the solar cell precursor. The method can detect the uniformity and thickness of the copper seed layer on the solar cell precursor.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a method for detecting uniformity and thickness of a copper plating seed layer applied to a solar cell.
Background
As solar cells, such as copper interconnect heterojunction solar cells, increase in efficiency and decrease in cost, the market share of copper interconnect heterojunction solar cells is increasing. The preparation process flow of the copper interconnection heterojunction solar cell is usually etching and cleaning, amorphous silicon film plating, PVD transparent conductive oxide film plating, PVD copper plating seed layer, electroplating, back etching and the like. Among them, the Physical Vapor Deposition (PVD) process is an indispensable part of preparing copper interconnect heterojunction solar cells. After the PVD copper plating seed layer is performed on the transparent conductive oxide film, the conventional method for detecting and monitoring the transparent conductive oxide film is not equally applicable due to the opacity of the copper seed layer, such as PL (photo luminescence) detection, film thickness detection, etc., which results in an inability to accurately detect the uniformity and thickness of the copper seed layer. The thickness and uniformity of the copper seed layer are directly related to the quality of the copper electrode prepared by the subsequent copper electroplating, and the uniformity and thickness of the copper seed layer cannot be detected manually because the thickness of the copper seed layer is nano-scale.
Disclosure of Invention
Based on this, it is necessary to provide a detection method capable of accurately detecting the uniformity and thickness of the copper seed layer.
The invention provides a method for detecting uniformity and thickness of a copper plating seed layer applied to a solar cell, which comprises the following steps:
Providing a substrate and a solar cell precursor, wherein the substrate is provided with a first surface and a second surface opposite to the first surface, the solar cell precursor is provided with a third surface and a fourth surface opposite to the third surface, and the substrate and the solar cell precursor are placed in the same cavity;
Preparing a first copper seed layer on the first surface, a second copper seed layer on the second surface, a third copper seed layer on the third surface, and a fourth copper seed layer on the fourth surface, respectively, using a physical vapor deposition process;
selecting a plurality of first measuring points on the surface of the first copper seed layer, and respectively testing the square resistances of the plurality of first measuring points to obtain a plurality of first square resistance values;
selecting a plurality of second measuring points on the surface of the second copper seed layer, and respectively testing the sheet resistances of the second measuring points to obtain a plurality of second sheet resistance values;
Calculating the difference values among the plurality of first square resistance values to obtain a first maximum difference value, judging that the uniformity of the first copper seed layer is qualified when the first maximum difference value is smaller than or equal to a preset square resistance value, judging that the uniformity of the third copper seed layer is qualified, and judging that the uniformity of the first copper seed layer is unqualified when the first maximum difference value is larger than the preset square resistance value, and judging that the uniformity of the third copper seed layer is unqualified; and
Calculating the difference values among the second sheet resistances to obtain a second maximum difference value, judging that the uniformity of the second copper seed layer is qualified when the second maximum difference value is smaller than or equal to the preset sheet resistance value, judging that the uniformity of the fourth copper seed layer is qualified, and judging that the uniformity of the second copper seed layer is unqualified when the second maximum difference value is larger than the preset sheet resistance value, and judging that the uniformity of the fourth copper seed layer is unqualified;
and when the uniformity of the third copper seed layer and the uniformity of the fourth copper seed layer are qualified, calculating the total thickness of the first copper seed layer and the second copper seed layer through the total mass of the first copper seed layer and the second copper seed layer, thereby obtaining the total thickness of the third copper seed layer and the fourth copper seed layer, or directly calculating the total thickness of the third copper seed layer and the fourth copper seed layer through the total mass of the third copper seed layer and the fourth copper seed layer.
In some embodiments, the predetermined sheet resistance is 0 to 0.1 Ω.
In some embodiments, the substrate comprises at least one of glass, stainless steel, and ceramic.
In some of these embodiments, testing the sheet resistance of the plurality of first measurement points specifically includes:
Testing the sheet resistances of the plurality of first measurement points by using a digital multimeter; and/or
The testing of the sheet resistance of the plurality of second measurement points specifically includes:
The sheet resistances of the plurality of second measurement points are tested using a digital multimeter.
In some of these embodiments, selecting the plurality of first measurement points on the surface of the first copper seed layer specifically includes:
selecting a plurality of equidistant first measuring points on the diagonal line of the first copper seed layer; and/or
Selecting a plurality of second measurement points on the surface of the second copper seed layer specifically includes:
And selecting a plurality of equidistant second measuring points on the diagonal line of the second copper seed layer.
In some of these embodiments, the number of first measurement points is 3 to 5; and/or
The number of the second measuring points is 3-5.
In some of these embodiments, the process parameters of the physical vapor deposition are changed when the uniformity of the third copper seed layer and/or the uniformity of the fourth copper seed layer is unacceptable.
In some embodiments, the first surface is a front surface, the second surface is a back surface, the third surface is a front surface, and the fourth surface is a back surface.
In some of these embodiments, directly calculating the total thickness of the third copper seed layer and the fourth copper seed layer from the total mass of the third copper seed layer and the fourth copper seed layer specifically includes:
Testing the quality of the solar cell precursor to obtain a first quality value M 1;
Testing the total mass of the solar cell precursor, the third copper seed layer and the fourth copper seed layer to obtain a second mass value M 2;
calculating a difference value between the second quality value M 2 and the first quality value M 1 to obtain a third quality value M 3; and
And calculating the total thickness value h of the third copper seed layer and the fourth copper seed layer according to the third quality value M 3.
In some of these embodiments, calculating the total thickness value h of the third copper seed layer and the fourth copper seed layer from the third quality value M 3 specifically includes:
Testing the area S of the third copper seed layer and the density rho of the third copper seed layer respectively; and
Calculating the total thickness value h of the third copper seed layer and the fourth copper seed layer according to the following formula:
h＝M3/(S*ρ)。
Since the total thickness of the third copper seed layer and the fourth copper seed layer is calculated by the total mass of the third copper seed layer and the fourth copper seed layer, the uniformity of the third copper seed layer and the fourth copper seed layer is detected first, and when the uniformity of the third copper seed layer and the fourth copper seed layer is qualified, the total thickness of the third copper seed layer and the fourth copper seed layer is calculated by the total mass of the third copper seed layer and the fourth copper seed layer, and the total thickness of the third copper seed layer and the fourth copper seed layer calculated in this way is accurate. Meanwhile, the substrate and the solar cell precursor are placed in the same cavity, and uniformity of the first copper seed layer and the second copper seed layer is detected respectively by adopting a method of testing sheet resistance, so that uniformity of the third copper seed layer and the fourth copper seed layer is judged. In addition, when the uniformity of the first copper seed layer and the second copper seed layer are qualified, the total thickness of the first copper seed layer and the second copper seed layer can be calculated through the total mass of the first copper seed layer and the second copper seed layer, so that the total thickness of the third copper seed layer and the fourth copper seed layer can be obtained.
Drawings
Fig. 1 is a flowchart of a test procedure for uniformity and thickness of a copper plating seed layer applied to a solar cell and a flowchart after test.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, the invention provides a method for detecting uniformity and thickness of a copper plating seed layer applied to a solar cell, comprising the following steps:
Step S11, providing a substrate and a solar cell precursor.
Wherein the substrate has a first surface and a second surface opposite to the first surface. In an embodiment, the first surface is a front surface and the second surface is a back surface.
In one embodiment, the substrate is made of at least one of glass, stainless steel and ceramic. I.e. the substrate may be a glass substrate, a stainless steel substrate, a ceramic substrate, etc. It is understood that both the first surface and the second surface are planar surfaces.
Wherein the solar cell precursor has a third surface and a fourth surface opposite to the third surface. In an embodiment, the third surface is a front surface and the fourth surface is a back surface.
In one embodiment, the solar cell precursor comprises a substrate, a first amorphous silicon layer and a first transparent conductive oxide film sequentially stacked on one surface of the substrate, and a second amorphous silicon layer and a second transparent conductive oxide film sequentially stacked on the other surface of the substrate. In one embodiment, the substrate may be a silicon wafer. In an embodiment, the first amorphous silicon layer includes a first intrinsic amorphous silicon layer and an N-type doped amorphous silicon layer. In an embodiment, the second amorphous silicon layer includes a second intrinsic amorphous silicon layer and a P-type doped amorphous silicon layer.
Specifically, during normal production of the solar cell, a blue membrane prepared after the processes of silicon wafer texturing, amorphous silicon deposition and transparent conductive oxide film (TCO) deposition is used as a precursor of the solar cell.
And step S12, placing the substrate and the solar cell precursor in the same cavity.
Step S13, preparing a first copper seed layer on the first surface, preparing a second copper seed layer on the second surface, preparing a third copper seed layer on the third surface, and preparing a fourth copper seed layer on the fourth surface, respectively, using a physical vapor deposition process.
It is understood that the first copper seed layer, the second copper seed layer, the third copper seed layer, and the fourth copper seed layer are generated simultaneously because the substrate and the solar cell precursor are located within the same chamber.
Step S14, selecting a plurality of first measuring points on the surface of the first copper seed layer, and respectively testing the sheet resistances of the plurality of first measuring points to obtain a plurality of first sheet resistance values.
Specifically, a plurality of equidistant first measuring points are selected on the diagonal line of the first copper seed layer, and the square resistances of the plurality of first measuring points are respectively tested to obtain a plurality of first square resistance values.
In one embodiment, the sheet resistance of the plurality of first measurement points may be tested using a digital multimeter. Specifically, when the sheet resistance of the first measurement point is tested, the digital multimeter can be lightly lapped on the first measurement point at a distance of about 1cm between the positive electrode and the negative electrode, so that the sheet resistance of the corresponding first measurement point is tested.
In an embodiment, the number of the first measurement points may be 3 to 5. In another embodiment, the number of the first measurement points may also be other values, such as 6, 7, etc.
The substrate is used for improving the accuracy of measuring the sheet resistance. That is, if the sheet resistance is measured directly on the surface of the third copper seed layer or the surface of the fourth copper seed layer, the solar cell precursor may affect the accuracy of measurement, while the substrate may have no effect on measuring the sheet resistance on the surface of the first copper seed layer.
And S15, selecting a plurality of second measuring points on the surface of the second copper seed layer, and respectively testing the sheet resistances of the second measuring points to obtain a plurality of second sheet resistance values.
Specifically, a plurality of equidistant second measuring points are selected on the diagonal line of the second copper seed layer, and the sheet resistances of the second measuring points are respectively tested to obtain a plurality of second sheet resistance values.
In one embodiment, the sheet resistance of the plurality of second measurement points may be tested using a digital multimeter. Specifically, when the sheet resistance of the second measurement point is tested, the digital multimeter can be lightly lapped on the second measurement point at a distance of about 1cm between the positive electrode and the negative electrode, so that the sheet resistance of the corresponding second measurement point is tested.
In an embodiment, the number of the second measurement points may be 3 to 5. In another embodiment, the number of the second measurement points may also be other values, such as 6, 7, etc.
And S16, calculating the difference values among the plurality of first square resistance values to obtain a first maximum difference value, and judging that the uniformity of the first copper seed layer is qualified when the first maximum difference value is smaller than or equal to a preset square resistance value, so as to judge that the uniformity of the third copper seed layer is qualified, and judging that the uniformity of the first copper seed layer is unqualified when the first maximum difference value is larger than the preset square resistance value, so as to judge that the uniformity of the third copper seed layer is unqualified.
In one embodiment, the predetermined sheet resistance is 0 to 0.1 Ω. It is understood that the first maximum difference is greater than or equal to 0.
And S17, calculating the difference values among the second sheet resistance values to obtain a second maximum difference value, and judging that the uniformity of the second copper seed layer is qualified when the second maximum difference value is smaller than or equal to the preset sheet resistance value, so as to judge that the uniformity of the fourth copper seed layer is qualified, and judging that the uniformity of the second copper seed layer is unqualified when the second maximum difference value is larger than the preset sheet resistance value, so as to judge that the uniformity of the fourth copper seed layer is unqualified.
Step S18, when the uniformity of the third copper seed layer and the uniformity of the fourth copper seed layer are qualified, calculating the total thickness of the first copper seed layer and the second copper seed layer through the total mass of the first copper seed layer and the second copper seed layer, so as to obtain the total thickness of the third copper seed layer and the fourth copper seed layer, or directly calculating the total thickness of the third copper seed layer and the fourth copper seed layer through the total mass of the third copper seed layer and the fourth copper seed layer; and when the uniformity of the third copper seed layer and/or the uniformity of the fourth copper seed layer are/is not qualified, changing the process parameters of the physical vapor deposition.
The following is a detailed description of step S18 in case one, case two and case three:
Case one: when the uniformity of the third copper seed layer and the uniformity of the fourth copper seed layer are qualified, calculating the total thickness of the first copper seed layer and the second copper seed layer according to the total mass of the first copper seed layer and the second copper seed layer, so that the total thickness of the third copper seed layer and the fourth copper seed layer specifically comprises:
And step S181, testing the quality of the substrate to obtain a first quality value m 1.
Step S182, testing the total mass of the substrate, the first copper seed layer and the second copper seed layer to obtain a second mass value m 2.
It will be appreciated that m 2>m1.
Step S183, calculating a difference between the second quality value m 2 and the first quality value m 1 to obtain a third quality value m 3.
Wherein m 3＝m2-m1.
Step S184 is to test the area S of the first copper seed layer and the density ρ of the first copper seed layer, respectively.
Step S185, calculating a total thickness value h of the first copper seed layer and the second copper seed layer according to the following formula:
h＝m3/(S*ρ)。
It is understood that the total thickness value of the first copper seed layer and the second copper seed layer is the total thickness value of the third copper seed layer and the fourth copper seed layer, thereby obtaining the total thickness value of the third copper seed layer and the fourth copper seed layer.
And a second case: when the uniformity of the third copper seed layer and the uniformity of the fourth copper seed layer are qualified, directly calculating the total thickness of the third copper seed layer and the fourth copper seed layer through the total mass of the third copper seed layer and the fourth copper seed layer specifically comprises:
And step S1811, testing the quality of the solar cell precursor to obtain a first quality value M 1.
Step S1812, testing the total mass of the solar cell precursor, the third copper seed layer and the fourth copper seed layer to obtain a second mass value M 2.
It is understood that M 2>M1.
Step S1813, calculating a difference between the second quality value M 2 and the first quality value M 1 to obtain a third quality value M 3.
Wherein M 3＝M2-M1.
Step S1814, testing the area S of the third copper seed layer and the density ρ of the third copper seed layer.
Step S1815, directly calculating the total thickness value h of the third copper seed layer and the fourth copper seed layer according to the following formula:
h＝M3/(S*ρ)。
and a third case: when the uniformity of the third copper seed layer and/or the uniformity of the fourth copper seed layer are/is not qualified, the changing the process parameters of the physical vapor deposition specifically includes:
Step S18111, changing the process parameters of the physical vapor deposition in step S13, and performing steps S11 to S18 again.
In one embodiment, the physical vapor deposition process parameters include at least one of power, belt speed, and gas flow.
Since the total thickness of the third copper seed layer and the fourth copper seed layer is calculated by the total mass of the third copper seed layer and the fourth copper seed layer, the uniformity of the third copper seed layer and the fourth copper seed layer is detected first, and when the uniformity of the third copper seed layer and the fourth copper seed layer is qualified, the total thickness of the third copper seed layer and the fourth copper seed layer is calculated by the total mass of the third copper seed layer and the fourth copper seed layer, and the total thickness of the third copper seed layer and the fourth copper seed layer calculated in this way is accurate. Meanwhile, the substrate and the solar cell precursor are placed in the same cavity, and uniformity of the first copper seed layer and the second copper seed layer is detected respectively by adopting a method of testing sheet resistance, so that uniformity of the third copper seed layer and the fourth copper seed layer is judged. In addition, when the uniformity of the first copper seed layer and the second copper seed layer are qualified, the total thickness of the first copper seed layer and the second copper seed layer can be calculated through the total mass of the first copper seed layer and the second copper seed layer, so that the total thickness of the third copper seed layer and the fourth copper seed layer can be obtained.
The method for detecting the uniformity of the copper plating seed layer applied to the solar cell can monitor the uneven plating film caused by abnormal conditions of a machine table and the like in the plating film process of the PVD process. In addition, the method for detecting the thickness of the copper plating seed layer applied to the solar cell can measure the influence condition of process change on the thickness of the copper seed layer in the film plating process of the PVD working procedure, and improve the process parameters or monitor the stability of the production line through the corresponding relation between the process conditions and the thickness of the copper seed layer.
The invention is further illustrated by the following specific examples.
Example 1
(1) Providing a glass substrate and a solar cell precursor. The solar cell precursor comprises a silicon wafer, a first intrinsic amorphous silicon layer, an N-type doped amorphous silicon layer, a first transparent conductive oxide film and a second intrinsic amorphous silicon layer, a P-type doped amorphous silicon layer and a second transparent conductive oxide film, wherein the first intrinsic amorphous silicon layer, the N-type doped amorphous silicon layer, the first transparent conductive oxide film and the second intrinsic amorphous silicon layer are sequentially laminated on one surface of the silicon wafer, the second intrinsic amorphous silicon layer, the P-type doped amorphous silicon layer and the second transparent conductive oxide film are sequentially laminated on the other surface of the silicon wafer.
(2) The substrate and the solar cell precursor are placed in the same chamber.
(3) Preparing a first copper seed layer on the first surface, preparing a second copper seed layer on the second surface, preparing a third copper seed layer on the third surface, and preparing a fourth copper seed layer on the fourth surface, respectively, using a physical vapor deposition process. Wherein, the physical vapor deposition process parameters are as follows: the power was 3.5kw, the number of turns was 3, the belt speed was 0.95m/min, and the gas (Ar) flow was 1000slpm.
(4) And taking out the substrate, selecting 4 equidistant first measuring points on the diagonal line of the first copper seed layer, and respectively testing the square resistances of the 4 first measuring points to obtain 4 first square resistance values.
(5) And selecting 4 second measuring points on the surface of the second copper seed layer, and respectively testing the sheet resistances of the 4 second measuring points to obtain 4 second sheet resistance values.
(6) Calculating the difference between 4 first side resistance values to obtain a first maximum difference, and judging that the uniformity of the first copper seed layer is qualified when the first maximum difference is smaller than or equal to a preset resistance value, so as to judge that the uniformity of the third copper seed layer is qualified; and when the first maximum difference value is larger than the preset sheet resistance value, judging that the uniformity of the first copper seed layer is unqualified, and judging that the uniformity of the third copper seed layer is unqualified.
(7) Calculating the difference values among the second square resistance values to obtain a second maximum difference value, and judging that the uniformity of the second copper seed layer is qualified when the second maximum difference value is smaller than or equal to a preset resistance value, so as to judge that the uniformity of the fourth copper seed layer is qualified; and when the second maximum difference value is larger than the preset sheet resistance value, judging that the uniformity of the second copper seed layer is unqualified, and judging that the uniformity of the fourth copper seed layer is unqualified.
(8) And when the uniformity of the third copper seed layer and the uniformity of the fourth copper seed layer are qualified, testing the quality of the solar cell precursor to obtain a first quality value M 1.
(9) And testing the total mass of the solar cell precursor, the third copper seed layer and the fourth copper seed layer to obtain a second mass value M 2.
(10) And calculating the difference between the second quality value M 2 and the first quality value M 1 to obtain a third quality value M 3.
(11) The area S of the third copper seed layer and the density ρ of the third copper seed layer were tested separately.
(12) The total thickness value h of the third copper seed layer and the fourth copper seed layer is calculated according to the following formula:
h＝M3/(S*ρ)。
Example 2
(1) Providing a glass substrate and a solar cell precursor. The solar cell precursor comprises a silicon wafer, a first intrinsic amorphous silicon layer, an N-type doped amorphous silicon layer, a first transparent conductive oxide film and a second intrinsic amorphous silicon layer, a P-type doped amorphous silicon layer and a second transparent conductive oxide film, wherein the first intrinsic amorphous silicon layer, the N-type doped amorphous silicon layer, the first transparent conductive oxide film and the second intrinsic amorphous silicon layer are sequentially laminated on one surface of the silicon wafer, the second intrinsic amorphous silicon layer, the P-type doped amorphous silicon layer and the second transparent conductive oxide film are sequentially laminated on the other surface of the silicon wafer.
(2) The substrate and the solar cell precursor are placed in the same chamber.
(3) Preparing a first copper seed layer on the first surface, preparing a second copper seed layer on the second surface, preparing a third copper seed layer on the third surface, and preparing a fourth copper seed layer on the fourth surface, respectively, using a physical vapor deposition process. Wherein, the physical vapor deposition process parameters are as follows: the power was 3.5kw, the number of turns was 3, the belt speed was 0.95m/min, and the gas (Ar) flow was 1000slpm.
(4) And taking out the substrate, selecting 4 equidistant first measuring points on the diagonal line of the first copper seed layer, and respectively testing the square resistances of the 4 first measuring points to obtain 4 first square resistance values.
(5) And selecting 4 second measuring points on the surface of the second copper seed layer, and respectively testing the sheet resistances of the 4 second measuring points to obtain 4 second sheet resistance values.
(6) Calculating the difference between 4 first side resistance values to obtain a first maximum difference, and judging that the uniformity of the first copper seed layer is qualified when the first maximum difference is smaller than or equal to a preset resistance value, so as to judge that the uniformity of the third copper seed layer is qualified; and when the first maximum difference value is larger than the preset sheet resistance value, judging that the uniformity of the first copper seed layer is unqualified, and judging that the uniformity of the third copper seed layer is unqualified.
(7) Calculating the difference values among the second square resistance values to obtain a second maximum difference value, and judging that the uniformity of the second copper seed layer is qualified when the second maximum difference value is smaller than or equal to a preset resistance value, so as to judge that the uniformity of the fourth copper seed layer is qualified; and when the second maximum difference value is larger than the preset sheet resistance value, judging that the uniformity of the second copper seed layer is unqualified, and judging that the uniformity of the fourth copper seed layer is unqualified.
(8) And when the uniformity of the third copper seed layer and the uniformity of the fourth copper seed layer are qualified, testing the quality of the solar cell precursor to obtain a first quality value M 1.
(9) And testing the total mass of the solar cell precursor, the third copper seed layer and the fourth copper seed layer to obtain a second mass value M 2.
(10) And calculating the difference between the second quality value M 2 and the first quality value M 1 to obtain a third quality value M 3.
(11) The area S of the third copper seed layer and the density ρ of the third copper seed layer were tested separately.
(12) The total thickness value h of the third copper seed layer and the fourth copper seed layer is calculated according to the following formula:
h＝M3/(S*ρ)。
The respective data obtained by the test in examples 1 to 2 are recorded in the following tables 1 and 2.
TABLE 1
As can be seen from table 1, in examples 1 and 2, since the first maximum difference is smaller than the predetermined sheet resistance value, it can be determined that the uniformity of the first copper seed layer is acceptable, and it can be determined that the uniformity of the third copper seed layer is acceptable. Similarly, in examples 1 to 2, since the second maximum difference is smaller than the predetermined sheet resistance, it can be determined that the uniformity of the second copper seed layer is acceptable, and it can be determined that the uniformity of the fourth copper seed layer is acceptable.
TABLE 2
As can be seen from table 2, since the uniformity of the third copper seed layer and the uniformity of the fourth copper seed layer in examples 1 to 2 were both acceptable, the total thickness of the third copper seed layer and the fourth copper seed layer could be calculated from the total mass of the third copper seed layer and the fourth copper seed layer.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. The method for detecting the uniformity and thickness of the copper plating seed layer applied to the solar cell is characterized by comprising the following steps of:
Providing a substrate and a solar cell precursor, wherein the substrate is provided with a first surface and a second surface opposite to the first surface, the solar cell precursor is provided with a third surface and a fourth surface opposite to the third surface, and the substrate and the solar cell precursor are placed in the same cavity;
Preparing a first copper seed layer on the first surface, a second copper seed layer on the second surface, a third copper seed layer on the third surface, and a fourth copper seed layer on the fourth surface, respectively, using a physical vapor deposition process;
selecting a plurality of first measuring points on the surface of the first copper seed layer, and respectively testing the square resistances of the plurality of first measuring points to obtain a plurality of first square resistance values;
selecting a plurality of second measuring points on the surface of the second copper seed layer, and respectively testing the sheet resistances of the second measuring points to obtain a plurality of second sheet resistance values;
Calculating the difference values among the plurality of first square resistance values to obtain a first maximum difference value, judging that the uniformity of the first copper seed layer is qualified when the first maximum difference value is smaller than or equal to a preset square resistance value, judging that the uniformity of the third copper seed layer is qualified, and judging that the uniformity of the first copper seed layer is unqualified when the first maximum difference value is larger than the preset square resistance value, and judging that the uniformity of the third copper seed layer is unqualified; and
Calculating the difference values among the second sheet resistances to obtain a second maximum difference value, judging that the uniformity of the second copper seed layer is qualified when the second maximum difference value is smaller than or equal to the preset sheet resistance value, judging that the uniformity of the fourth copper seed layer is qualified, and judging that the uniformity of the second copper seed layer is unqualified when the second maximum difference value is larger than the preset sheet resistance value, and judging that the uniformity of the fourth copper seed layer is unqualified;
and when the uniformity of the third copper seed layer and the uniformity of the fourth copper seed layer are qualified, calculating the total thickness of the first copper seed layer and the second copper seed layer through the total mass of the first copper seed layer and the second copper seed layer, thereby obtaining the total thickness of the third copper seed layer and the fourth copper seed layer, or directly calculating the total thickness of the third copper seed layer and the fourth copper seed layer through the total mass of the third copper seed layer and the fourth copper seed layer.
2. The method for detecting uniformity and thickness of copper plating seed layer applied to a solar cell according to claim 1, wherein the predetermined sheet resistance value is 0 to 0.1 Ω.
3. The method for detecting uniformity and thickness of a copper plating seed layer applied to a solar cell as claimed in claim 1, wherein said substrate is made of at least one of glass, stainless steel and ceramic.
4. The method for detecting uniformity and thickness of a copper plating seed layer applied to a solar cell as claimed in claim 1, wherein the testing of the sheet resistance of the plurality of first measurement points specifically comprises:
Testing the sheet resistances of the plurality of first measurement points by using a digital multimeter; and/or
The testing of the sheet resistance of the plurality of second measurement points specifically includes:
The sheet resistances of the plurality of second measurement points are tested using a digital multimeter.
5. The method for detecting uniformity and thickness of copper plating seed layer applied to a solar cell as claimed in claim 1, wherein selecting a plurality of first measurement points on the surface of the first copper seed layer comprises:
selecting a plurality of equidistant first measuring points on the diagonal line of the first copper seed layer; and/or
Selecting a plurality of second measurement points on the surface of the second copper seed layer specifically includes:
And selecting a plurality of equidistant second measuring points on the diagonal line of the second copper seed layer.
6. The method for detecting uniformity and thickness of copper plating seed layer applied to solar cell as claimed in claim 5, wherein the number of the first measuring points is 3 to 5; and/or
The number of the second measuring points is 3-5.
7. The method for detecting uniformity and thickness of copper plating seed layer applied to a solar cell according to claim 1, wherein the process parameters of physical vapor deposition are changed when uniformity of the third copper seed layer and/or uniformity of the fourth copper seed layer are not qualified.
8. The method for detecting uniformity and thickness of a copper plating seed layer applied to a solar cell according to claim 1, wherein the first surface is a front surface, the second surface is a back surface, the third surface is a front surface, and the fourth surface is a back surface.
9. The method for detecting uniformity and thickness of copper plating seed layer applied to solar cell according to any one of claims 1 to 8, wherein directly calculating total thickness of the third copper seed layer and the fourth copper seed layer from total mass of the third copper seed layer and the fourth copper seed layer specifically comprises:
Testing the quality of the solar cell precursor to obtain a first quality value M 1;
Testing the total mass of the solar cell precursor, the third copper seed layer and the fourth copper seed layer to obtain a second mass value M 2;
calculating a difference value between the second quality value M 2 and the first quality value M 1 to obtain a third quality value M 3; and
And calculating the total thickness value h of the third copper seed layer and the fourth copper seed layer according to the third quality value M 3.
10. The method for detecting uniformity and thickness of a copper plating seed layer applied to a solar cell according to claim 9, wherein calculating a total thickness value h of the third copper seed layer and the fourth copper seed layer according to the third quality value M 3 specifically comprises:
Testing the area S of the third copper seed layer and the density rho of the third copper seed layer respectively; and
Calculating the total thickness value h of the third copper seed layer and the fourth copper seed layer according to the following formula:
h＝M3/(S*ρ)。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211197313.1A CN115435671B (en) | 2022-09-29 | 2022-09-29 | Method for detecting uniformity and thickness of copper plating seed layer applied to solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211197313.1A CN115435671B (en) | 2022-09-29 | 2022-09-29 | Method for detecting uniformity and thickness of copper plating seed layer applied to solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115435671A CN115435671A (en) | 2022-12-06 |
| CN115435671B true CN115435671B (en) | 2024-07-09 |
Family
ID=84251609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211197313.1A Active CN115435671B (en) | 2022-09-29 | 2022-09-29 | Method for detecting uniformity and thickness of copper plating seed layer applied to solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115435671B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105203847A (en) * | 2015-09-29 | 2015-12-30 | 中国科学院上海硅酸盐研究所 | Method for measuring thin layer material square resistance and connection point contact resistance |
| CN107543487A (en) * | 2016-06-27 | 2018-01-05 | 北京北方华创微电子装备有限公司 | A kind of film thickness monitoring method and device in situ |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5754297B2 (en) * | 2011-08-18 | 2015-07-29 | Ｊｆｅスチール株式会社 | Thickness uniformity evaluation method |
| CN108827164A (en) * | 2018-04-18 | 2018-11-16 | 钱立文 | Metallized film sheet resistance in-service monitoring device |
| CN108592777A (en) * | 2018-04-19 | 2018-09-28 | 钱立文 | Moveable metallized film sheet resistance in-service monitoring device |
| CN109888060A (en) * | 2019-03-15 | 2019-06-14 | 通威太阳能（合肥）有限公司 | A kind of solar cell and preparation method thereof with three layers of passivation layer structure |
| CN110146045A (en) * | 2019-04-16 | 2019-08-20 | 珠海中京电子电路有限公司 | A kind of electroplating evenness detection method |
| CN114530507A (en) * | 2020-11-02 | 2022-05-24 | 财团法人金属工业研究发展中心 | Solar cell with passivation layer |
-
2022
- 2022-09-29 CN CN202211197313.1A patent/CN115435671B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105203847A (en) * | 2015-09-29 | 2015-12-30 | 中国科学院上海硅酸盐研究所 | Method for measuring thin layer material square resistance and connection point contact resistance |
| CN107543487A (en) * | 2016-06-27 | 2018-01-05 | 北京北方华创微电子装备有限公司 | A kind of film thickness monitoring method and device in situ |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115435671A (en) | 2022-12-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111641388A (en) | Method for testing metal contact recombination value and solar cell | |
| CN115435671B (en) | Method for detecting uniformity and thickness of copper plating seed layer applied to solar cell | |
| CN113539871A (en) | Method for detecting stability of chain type PECVD (plasma enhanced chemical vapor deposition) coating process | |
| CN109545699B (en) | Method for measuring specific contact resistivity of ohmic contact on back surface of SiC substrate | |
| TWI418829B (en) | Solar cell test method | |
| CN111370341A (en) | Method for testing interface recombination rate of crystalline silicon cell | |
| CN212163271U (en) | Solar cell for testing metal contact composite value | |
| CN113299574A (en) | Method and system for testing metal induced recombination value of PERC battery back aluminum | |
| CN102569503A (en) | Method for evaluating height-to-width ratio of auxiliary grid line of crystalline silicon solar cell | |
| CN114520155A (en) | Monitoring method of solar cell | |
| CN109727886B (en) | Solar cell temperature coefficient field test method | |
| CN109712905A (en) | The two-sided rate exception analysis method of solar battery sheet | |
| CN115312415A (en) | Method for detecting influence of copper plating seed layer of heterojunction solar cell on amorphous silicon | |
| CN113345815B (en) | Passivation layer measuring method and solar cell manufacturing method | |
| CN112509936B (en) | Method for evaluating printability of electrode grid line of silicon crystal solar cell and application thereof | |
| CN115172197A (en) | Control method of crystalline silicon cell pretreatment system based on minority carrier lifetime | |
| CN113314716B (en) | Current collector and battery core | |
| TW202340734A (en) | Standard wafers, method of making the same and calibration method | |
| CN115855949A (en) | Method for detecting damage of copper plating seed layer to blue film and influence of copper plating seed layer on electrical property | |
| CN210805787U (en) | Photovoltaic cell | |
| CN112768365B (en) | Method for detecting graphic precision of laser-doped SE battery | |
| CN116031334B (en) | Method for judging thickness of polycrystalline silicon layer in TOPCO battery production process | |
| CN109932337B (en) | Device and method for evaluating compactness of silicon-based back sealing film | |
| CN219163410U (en) | Contact characteristic test sheet of solar cell passivation contact structure | |
| CN113707570B (en) | Method for testing metal contact composite value and screen pattern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |