CN115425159A - Display panel, electronic equipment and display panel preparation method - Google Patents
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Abstract
The application provides a display panel, electronic equipment and a display panel preparation method. The display panel comprises a quantum dot layer and a packaging assembly, wherein the quantum dot layer is used for emitting light rays along the direction towards the packaging assembly, the packaging assembly is used for packaging the quantum dot layer, the packaging assembly comprises a first packaging piece and a second packaging piece, the first packaging piece is arranged on the quantum dot layer, and the first packaging piece has a first refractive index; the second packaging piece is arranged on one side, away from the quantum dot layer, of the first packaging piece, and has a second refractive index which is smaller than the first refractive index. In the display panel that this application provided, when the light that sends of quantum dot layer loops through the structure of two-layer different refracting indexes and earlier when the structure through little refracting index after the structure of big refracting index, can reduce the loss degree of light (reduce the Fresnel loss), improve the light transmissivity of encapsulation subassembly, and then improve whole display panel's display effect.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel, electronic equipment and a display panel preparation method.
Background
With the development of the electro-optical display technology and the semiconductor manufacturing technology, the development of an Organic Light-Emitting Diode (OLED) display panel has a wide prospect. The OLED display panel is widely used in various display devices such as mobile phones, displays, televisions, and the like due to technical advantages of self-luminescence, lightness, thinness, high contrast, and the like. Related art OLED display panels can realize NTSC > 100% color gamut, while Quantum Dots (QDs) can realize NTSC >120% color gamut with ultrahigh color saturation due to their advantages of narrow emission spectrum, high color purity, and the like. The combination of the OLED technology and the QD technology becomes a display scheme of the next generation display technology.
The quantum dot layer is as same as the light emitting layer of the OLED, and is easily affected by the water-oxygen environment, and the efficiency is degraded, so that the quantum dot needs to be packaged. In the display panel of the related art, the light transmittance of the quantum dot layer in the package assembly is not sufficient, which easily results in poor display effect of the whole display panel.
Disclosure of Invention
An object of the present application is to provide a display panel, an electronic device, and a display panel manufacturing method, so as to solve the technical problem that the light transmittance of a packaging assembly of a quantum dot layer in the display panel is not sufficient, which easily results in a poor display effect of the entire display panel.
In a first aspect, the present application provides a display panel, including a quantum dot layer and a package assembly, the quantum dot layer is used for emitting light along a direction of the package assembly, the package assembly is used for encapsulating the quantum dot layer, the package assembly includes:
a first encapsulant disposed on the quantum dot layer, the first encapsulant having a first refractive index;
and the second packaging piece is arranged on one side of the first packaging piece, which is far away from the quantum dot layer, and has a second refractive index which is smaller than the first refractive index.
The application provides a display panel, encapsulation subassembly are used for encapsulating quantum dot layer, and quantum dot layer, the first packaging member of encapsulation subassembly and the second packaging member of encapsulation subassembly stack up in proper order and set up, and quantum dot layer is along the direction emission light of orientation encapsulation subassembly, and light is through the first encapsulation layer that has first refractive index and the second encapsulation layer that has the second refractive index in proper order, and the second refractive index is less than first refractive index. In the display panel that this application provided, when the light that sends of quantum dot layer loops through the structure of two-layer different refracting indexes and earlier when the structure through little refracting index after the structure of big refracting index, can reduce the loss degree of light (reduce the Fresnel loss), improve the light transmissivity of encapsulation subassembly, and then improve whole display panel's display effect.
Wherein the first packaging part is made of a-SiN 4 H, and the material of the second packaging part is SiO x N y X is 1 or 2, y is 2 or 4;
or the first packaging piece is made of a-SiN 4 H, and the material of the second packaging part is SiO 2 ；
Or the first packaging part is made of SiO x N y X is 1 or 2, y is 2 or 4, and the material of the second packaging part is SiO 2 。
Wherein the package assembly further comprises:
a third package disposed on a side of the second package facing away from the first package, the second package having a third index of refraction, the third index of refraction being less than the second index of refraction.
Wherein the first packaging part is made of a-SiN 4 H, the second packaging part is made of SiO x N y X is 1 or 2, y is 2 or 4, and the material of the third packaging part is SiO 2 。
Wherein the thickness of the first package is 300nm-600nm, the thickness of the second package is 5nm-50nm, and the thickness of the third package is 200nm-500nm.
Wherein, the display panel still includes bearing substrate and light emitting component, light emitting component includes:
the driving layer is arranged on the bearing substrate;
the anode layer is arranged on one side, away from the bearing substrate, of the driving layer;
the light-emitting layer is arranged on one side, away from the bearing substrate, of the anode layer;
the cathode layer is arranged on one side, away from the bearing substrate, of the light-emitting layer;
and the film packaging layer is arranged on one side of the cathode layer, which is deviated from the bearing substrate.
The display panel further comprises a pixel limiting layer, wherein the pixel limiting layer comprises a plurality of pixel opening areas and a retaining wall part surrounding the pixel opening areas, and the pixel opening areas comprise a first pixel opening area, a second pixel opening area and a third pixel opening area which are sequentially arranged at intervals;
the light-emitting layer comprises a first light-emitting part, a second light-emitting part and a third light-emitting part, the first light-emitting part is positioned in the first pixel opening area, the second light-emitting part is positioned in the second pixel opening area, the third light-emitting part is positioned in the third pixel opening area, and the light-emitting layer is used for emitting light of a first color;
the quantum dot layer comprises a first quantum dot part and a second quantum dot part, the first quantum dot part is positioned in the first pixel opening area, the second quantum dot part is positioned in the second pixel opening area, the first quantum dot part is used for emitting light of a second color, and the second quantum dot part is used for emitting light of a third color;
the display panel further includes:
the first light filtering piece is arranged on one side, away from the bearing substrate, of the first quantum dot part and used for passing light rays of a second color;
the second light filtering piece is arranged on one side, away from the bearing substrate, of the second quantum dot part and used for passing light rays of a third color; and
and the scattering piece is arranged on one side of the third light-emitting part, which is deviated from the bearing substrate, and is used for scattering the light of the first color.
In a second aspect, the present application provides an electronic device, comprising:
an apparatus body;
and the display panel according to the first aspect, the display panel being carried on the device body.
In a third aspect, the present application provides a method for manufacturing a display panel, including:
providing a panel blank having a layer of quantum dots;
forming a first encapsulant on the quantum dot layer, the first encapsulant having a first index of refraction;
forming a second encapsulant on a side of the first encapsulant facing away from the quantum dot layer, the second encapsulant having a second index of refraction that is less than the first index of refraction.
Wherein the forming the second package further comprises:
forming a third encapsulant on a side of the second encapsulant facing away from the quantum dot layer, the second encapsulant having a third index of refraction, the third index of refraction being less than the second index of refraction.
Wherein forming a first package on the quantum dot layer comprises:
supply of gaseous SiH 4 、NH 3 And N 2 Formation of SiN 4 :H；
Forming a second encapsulant on a side of the first encapsulant facing away from the quantum dot layer includes:
providing SiO 2 And SiN 4 H is reacted to form SiO x N y X is 1 or 2, y is 2 or 4;
forming a third encapsulant on a side of the second encapsulant facing away from the quantum dot layer comprises:
formation of SiO 2 。
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional structure diagram of a display panel according to a first embodiment of the present disclosure;
fig. 2 is a schematic cross-sectional structural diagram of a display panel provided in the second embodiment of the present application;
fig. 3 is a schematic cross-sectional view of a display panel including a light emitting device according to a second embodiment of the present disclosure;
fig. 4 is a schematic cross-sectional view illustrating a display panel including a light emitting device according to a third embodiment of the present disclosure;
fig. 5 is a schematic view of an electronic device provided in embodiment four of the present application;
FIG. 6 isbase:Sub>A cross-sectional view taken along line A-A of FIG. 5;
fig. 7 is a flowchart of a method for manufacturing a display panel according to a fifth embodiment of the present disclosure;
fig. 8 is a flowchart of a method for manufacturing a display panel according to a sixth embodiment of the present disclosure;
fig. 9 is a flowchart included in a process S300 of a display panel manufacturing method according to a fifth embodiment of the present disclosure;
fig. 10 is a flowchart of a method for manufacturing a display panel according to a seventh embodiment of the present disclosure;
fig. 11 is a flowchart included in a flow S500 of a display panel manufacturing method according to a fifth embodiment of the present disclosure;
fig. 12 is a flowchart included in a process S700 of a display panel manufacturing method according to a sixth embodiment of the present disclosure.
Description of reference numerals:
electronic device-1000, display panel-1, quantum dot layer-10, first quantum dot part-11, second quantum dot part-12, package part-20, first package part-201, second package part-202, third package part-203, first package part-21, second package part-22, third package part-23, carrier substrate-30, light emitting component-40, driving layer-41, first driving part-411, second driving part-412, third driving part-413, anode layer-42, first anode part-421, second anode part-422, third anode part-423, and third quantum dot part-12 a luminescent layer-43, a first luminescent part-431, a second luminescent part-432, a third luminescent part-433, a cathode layer-44, a first cathode part-441, a second cathode part-442, a third cathode part-443, a film packaging layer-45, a first film packaging part-451, a second film packaging part-452, a third film packaging part-453, a pixel definition layer-50, a first barrier wall part-51, a second barrier wall part-52, a first light filtering part-61, a second light filtering part-62, a scattering part-63, a device body-7, a front shell-710, a middle frame-720, and a rear shell-730.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without inventive step, are within the scope of the present disclosure.
Reference herein to "an embodiment" or "an implementation" means that a particular feature, component, or characteristic described in connection with the embodiment or implementation can be included in at least one embodiment of the present application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the above-described drawings are used for distinguishing between different objects and not for describing a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion.
In this specification, for convenience, the terms "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicating the orientation or positional relationship are used to explain the positional relationship of the constituent elements with reference to the drawings only for the convenience of description and simplification of description, but not to indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present disclosure. The positional relationship of the constituent elements is appropriately changed according to the described directions of the constituent elements. Therefore, the words described in the specification are not limited to the words described in the specification, and may be replaced as appropriate.
In this specification, the terms "mounted," "connected," and "connected" are to be construed broadly unless otherwise specifically indicated and limited. For example, it may be a fixed connection, or a removable connection, or an integral connection; can be a mechanical connection, or an electrical connection; either directly or indirectly through intervening components, or both may be interconnected. The meaning of the above terms in the present disclosure can be understood by those of ordinary skill in the art as appropriate.
With the development of the electro-optical display technology and the semiconductor manufacturing technology, the development of an Organic Light-Emitting Diode (OLED) display panel has a wide prospect. The OLED display panel is widely used in various display devices such as mobile phones, displays, televisions, and the like due to its technical advantages of self-luminescence, thinness, high contrast, and the like. Related art OLED display panels can realize NTSC > 100% color gamut, and Quantum Dots (QDs) can realize color gamut with ultrahigh color saturation NTSC >120% due to the advantages of narrow light emission spectrum, high color purity and the like. The combination of OLED technology and QD technology becomes the display scheme of the next generation display technology
The quantum dot layer is as same as the light emitting layer of the OLED, and is easily affected by the water-oxygen environment, and the efficiency is degraded, so that the quantum dot needs to be packaged. In the display panel of the related art, the light transmittance of the quantum dot layer in the package assembly is not sufficient, which easily results in poor display effect of the whole display panel.
Referring to fig. 1, fig. 1 is a schematic cross-sectional structure diagram of a display panel according to an embodiment of the present disclosure. The application provides a display panel 1, including quantum dot layer 10 and encapsulation subassembly 20, quantum dot layer 10 is used for along the orientation emission light of encapsulation subassembly 20, encapsulation subassembly 20 is used for the encapsulation quantum dot layer 10, encapsulation subassembly 20 includes first encapsulation 21 and second encapsulation 22, first encapsulation 21 is located on quantum dot layer 10, first encapsulation 21 has first refractive index. The second encapsulant 22 is disposed on a side of the first encapsulant 21 facing away from the quantum dot layer 10, and the second encapsulant 22 has a second refractive index smaller than the first refractive index.
Specifically, the first encapsulant 21 has a first refractive index, and the second encapsulant layer has a second refractive index, which is smaller than the first refractive index. The light generated by the quantum dot layer 10 passes through the first encapsulating layer with a first refractive index and then passes through the second encapsulating layer with a second refractive index. When the light emitted from the quantum dot layer 10 sequentially passes through two layers of structures with different refractive indexes, and passes through the structure with a large refractive index and then the structure with a small refractive index, the loss degree of the light (fresnel loss) can be reduced, including but not limited to reducing the loss of light energy or reducing the light refracted to other regions. The materials and manufacturing processes of the first and second package layers are described in detail later.
The application provides a display panel 1, encapsulation subassembly 20 is used for the encapsulation quantum dot layer 10, quantum dot layer 10 encapsulation subassembly 20 first encapsulation 21 and encapsulation subassembly 20 second encapsulation 22 stacks up the setting in proper order, quantum dot layer 10 is along the orientation encapsulation subassembly 20's direction emission, light is in proper order through having first refractive index first encapsulation layer and have the second refractive index the second encapsulation layer, the second refractive index is less than first refractive index. The application provides in display panel 1, work as light that quantum dot layer 10 sent loops through the structure of two-layer different refracting indexes and earlier when the structure through little refracting index behind the structure of big refracting index, can reduce the loss degree of light (reduce the Fresnel loss), improves the light transmissivity of encapsulation subassembly 20, and then improves wholly display panel 1's display effect.
In this embodiment, the material of the first package 21 is a-SiN 4 H (amorphous SiN) 4 H) and the material of the second package 22 is SiO x N y X is 1 or 2, y is 2 or 4. Alternatively, the first package 21 is made of a-SiN 4 H, and the material of the second package 22 is SiO 2 . Alternatively, the material of the first package 21 is SiO x N y X is 1 or 2, y is 2 or 4, and the second package 22 is made of SiO 2 。
Material SiO x N y Wherein x is 1 or 2, y is 2 or 4. Alternatively, x may be 1, y may be 2, and the material SiO is x N y Is SiON 2 (ii) a The material SiO may be x is 1, y is 4 x N y Is SiO 1 N 4 (ii) a The material SiO can also be x is 2 and y is 2 x N y Is SiO 2 N 2 (ii) a The material SiO may be x is 2 and y is 4 x N y Is SiO 2 N 4 This is not specifically limited by the present application.
When the a-SiN is used, it is preferable to use 4 H is a packaging material, the refractive index of the packaging material is approximately 1.76, and the SiO is selected x N y The refractive index of the package is approximately 1.65 when the material is a package material, and the SiO is selected 2 The refractive index of the package is approximately 1.48 when the material is used for the package.
Therefore, when the first packaging layer is made of a-SiN 4 H, the second packaging layer can be made of SiO x N y Or SiO 2 When the first packaging layer is made of SiO x N y When in use, the second package is made of SiO 2 . Namely, the refractive index of the first packaging layer is greater than that of the second packaging layer, so that the light emitted by the quantum dot layer 10 can sequentially pass through the structures with two layers of different refractive indexes and pass through the structure with a large refractive index and then pass through the structure with a small refractive index.
Of course, in other embodiments, the first package member 21 and the second package member 22 may be made of more materials with different refractive indexes, and the first refractive index of the first package member 21 is only required to be greater than the second refractive index of the second package member 22, which is not particularly limited in this application.
Referring to fig. 2, fig. 2 is a schematic cross-sectional structure diagram of a display panel according to a second embodiment of the present disclosure. The package assembly 20 further includes a third package 23, the third package 23 is disposed on a side of the second package 22 away from the first package 21, the second package 22 has a third refractive index, and the third refractive index is smaller than the second refractive index.
Specifically, the third package 23 has a third refractive index, which is smaller than the second refractive index. The light generated by the quantum dot layer 10 passes through the first packaging layer with the first refractive index, then passes through the second packaging layer with the second refractive index, and finally passes through the third packaging layer with the third refractive index. When the light emitted from the quantum dot layer 10 sequentially passes through three layers of structures with different refractive indexes and the refractive indexes of the three layers of structures are sequentially reduced, the loss degree of the light (fresnel loss) can be further reduced, and similarly, the loss of the light energy or the light refracted to other regions can be reduced. The material and fabrication process of the third package layer are described in detail later.
When the light that quantum dot layer 10 sent loops through the structure of the different refracting indexes of three-layer and the refracting index of three-layer structure reduces in proper order, can further reduce the loss degree of light (reduce fresnel loss), improve the light transmissivity of encapsulation subassembly 20, and then improve wholly display panel 1's display effect.
In this embodiment, the material of the first package 21 is a-SiN 4 H, the material of the second packaging part 22 is SiO x N y X is 1 or 2, y is 2 or 4, and the third package 23 is made of SiO 2 。
Specifically, when the package assembly 20 has the third package 23, the first package 21 is made of a material a-SiN 4 H, the material of the second packaging part 22 is SiO x N y The third package 23 is made of SiO 2 。
Of course, in other embodiments, the first package 21, the second package 22 and the third package 23 can be made of more materials with different refractive indexes, and it is only required that the first refractive index of the first package 21 is greater than the second refractive index of the second package 22, and the second refractive index of the second package 22 is greater than the third refractive index of the third package 23, which is not particularly limited in this application.
The thicknesses of the first package 21, the second package 22 and the third package 23 are determined by their composition materials, and when the composition materials are a-SiN 4 H, the thickness of the material is 300nm-600nm; when the material is SiO x N y The thickness of the film is 5nm-50nm; when the material is SiO 2 The thickness of the film is 200nm-500nm.
In the present application, the first package member 21 is made of a-SiN 4 H, the material of the second packaging part 22 is SiO x N y The third package 23 is made of SiO 2 Are illustrative and should not be construed as limiting the present application.
If the first package 21 is smaller than 300nm, the effect of the first package 21 in preventing external water and oxygen from corroding the quantum dot layer 10 may be poor, and if the first package 21 is larger than 600nm, the first package 21 may block the light emitted from the quantum dot layer 10, thereby reducing the light transmittance of the display panel 1.
Therefore, the optimal thickness of the first package 21 is 300nm to 600nm, which can effectively isolate external water and oxygen from corroding the quantum dot layer 10 and ensure that the light transmittance of the display panel 1 is not reduced.
Optionally, the thickness of the first package 21 may be 300nm, or 350nm, or 410nm, or 460nm, or 520nm, or 560nm, or 600nm, or other values within 300nm-600 nm.
The thickness requirement of the second package 22 and the thickness requirement of the third package 23 may refer to the thickness requirement of the first package layer, and the thickness requirement of the second package 22 is preferably 5nm to 50nm, and the thickness requirement of the third package 23 is preferably 200nm to 500nm.
Optionally, the thickness of the second package 22 may be 5nm, or 10nm, or 12nm, or 20nm, or 27nm, or 35nm, or 50nm, or other values within 5nm-50 nm.
The thickness of the third package 23 may be 200nm, or 2500nm, or 3100nm, or 360nm, or 420nm, or 460nm, or 500nm, or other values within 200nm-500nm.
Referring to fig. 3, fig. 3 is a schematic cross-sectional structure diagram of a display panel including a light emitting device according to a second embodiment of the present disclosure. The display panel 1 further includes a carrier substrate 30 and a light emitting element 40, wherein the light emitting element 40 includes a driving layer 41, an anode layer 42, a light emitting layer 43, a cathode layer 44, and a thin film encapsulation layer 45. The driving layer 41 is disposed on the carrier substrate 30. The anode layer 42 is disposed on a side of the driving layer 41 facing away from the carrier substrate 30. The light-emitting layer 43 is arranged on a side of the anode layer 42 facing away from the carrier substrate 30. The cathode layer 44 is arranged on a side of the light emitting layer 43 facing away from the carrier substrate 30. The thin film encapsulation layer 45 is disposed on a side of the cathode layer 44 facing away from the carrier substrate 30.
In this embodiment, the carrier substrate 30 may be a flexible substrate, and optionally, the carrier substrate 30 may be made of any one or more of the following materials: polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), cyclic Olefin Polymer (COP), polycarbonate (PC), polystyrene (PS), polypropylene (PP), polytetrafluoroethylene (PTFE). In other implementations, the carrier substrate 30 may also be a non-flexible substrate, such as glass, ceramic, etc., which is not limited in this application.
The anode layer 42 is used for providing holes, the cathode layer 44 is used for providing electrons, and the holes provided by the anode layer 42 and the electrons provided by the cathode layer 44 are recombined in the light emitting layer 43 and emit light. Alternatively, the anode layer 42 may be made of, but not limited to, tin oxide (ITO), other materials, and the light-emitting layer 43 may be made of, but not limited to, 8-hydroxyquinoline and aluminum (Alq 3), 2-tert-butyl-9, 10-bis- (β -naphthyl) -anthracene (TBADN), or other materials.
The thin film encapsulation layer 45 covers the cathode layer 44, and can be used for isolating water and oxygen and preventing the corrosion of external water and oxygen to devices in the light emitting assembly 40.
Referring to fig. 3 and 4, fig. 4 is a schematic cross-sectional structure diagram of a display panel including a light emitting element according to a third embodiment of the present disclosure. Specifically, the display panel 1 further includes a pixel defining layer 50, and the pixel defining layer 50 includes a plurality of pixel opening areas, and a plurality of barrier wall portions surrounding the pixel opening areas. The pixel opening area includes a first pixel opening area 50a, a second pixel opening area 50b, and a third pixel opening area 50c, which are sequentially disposed at intervals.
The light-emitting layer 43 includes a first light-emitting portion 431, a second light-emitting portion 432, and a third light-emitting portion 433. Specifically, the first light emitting part 431 is located in the first pixel opening area 50a, the second light emitting part 432 is located in the second pixel opening area 50b, the third light emitting part 433 is located in the third pixel opening area 50c, and the light emitting layer 43 is configured to emit light of a first color.
The quantum dot layer 10 includes a first quantum dot portion 11 and a second quantum dot portion 12, the first quantum dot portion 11 is located in the first pixel opening region 50a, the second quantum dot portion 12 is located in the second pixel opening region 50b, the first quantum dot portion 11 is configured to emit light of a second color, and the second quantum dot portion 12 is configured to emit light of a third color;
for convenience of description, the retaining walls include a first retaining wall 51 and a second retaining wall 52. Specifically, the first light emitting portion 431 is located on a side of the first wall portion 51 away from the second wall portion 52, the second light emitting portion 432 is located between the first wall portion 51 and the second wall portion 52, and the third light emitting portion 433 is located on a side of the second wall portion 52 away from the first wall portion 51. The first quantum dot portion 11 is located on one side of the first blocking wall portion 51 departing from the second blocking wall portion 52, and the second quantum dot portion 12 is located between the first blocking wall portion 51 and the second blocking wall portion 52.
The display panel 1 further includes a first filter 61, a second filter 62 and a scattering member 63, wherein the first filter 61 is disposed on a side of the first quantum dot portion 11 departing from the carrier substrate 30, and is configured to pass light of a second color. The second filter 62 is disposed on a side of the second quantum dot portion 12 away from the carrier substrate 30, and is configured to pass through light of a third color. The scattering member 63 is disposed on a side of the third light emitting portion 433 away from the carrier substrate 30, and is used for scattering the light of the first color.
The light of the first color, the light of the second color, and the light of the third color are mixed to form a color required by the pixel, it should be noted that the above structures are specific structures in one pixel, and the light emitted by a plurality of pixels is combined to form a display image of the display panel 1.
In this embodiment, the quantum dot layer 10 further includes a substrate, quantum dots, and scattering particles in sequence, and the scattering particles can be used to scatter the light emitted by the quantum dots, so that the light emitted by the quantum dot layer 10 is more uniform, the viewing angle is larger, and the color shift of the light is smaller or even no color shift under a large viewing angle.
Specifically, the driving layer 41 includes a first driving portion 411, a second driving portion 412 and a third driving portion 413, the first driving portion 411 is located in the first pixel opening area 50a, the second driving portion 412 is located in the second pixel opening area 50b, and the third driving portion 413 is located in the third pixel opening area 50c.
The anode layer 42 includes a first anode portion 421, a second anode portion 422, and a third anode portion 423, wherein the first anode portion 421 is located in the first pixel opening area 50a, the second anode portion 422 is located in the second pixel opening area 50b, and the third anode portion 423 is located in the third pixel opening area 50c.
The cathode layer 44 includes a first cathode portion 441, a second cathode portion 442 and a third cathode portion 443, the first cathode portion 441 is located in the first pixel opening area 50a, the second cathode portion 442 is located in the second pixel opening area 50b, and the third cathode portion 443 is located in the third pixel opening area 50c.
The film encapsulation layer 45 includes a first film encapsulation portion 451, a second film encapsulation portion 452, and a third film encapsulation portion 453, the film encapsulation layer 45 includes the first film encapsulation portion 451 positioned at the first pixel opening area 50a, the second film encapsulation portion 452 positioned at the second pixel opening area 50b, and the third film encapsulation portion 453 positioned at the third pixel opening area 50c.
The package assembly 20 includes a first package portion 201, a second package portion 202 and a third package portion 203, the package assembly 20 includes the first package portion 201 located in the first pixel opening area 50a, the second package portion 202 located in the second pixel opening area 50b, and the third package portion 203 located in the third pixel opening area 50c.
Specifically, the first anode 421, the first light emitting part 431, the first cathode 441, the first thin film encapsulation part 451, the first quantum dot 11, the first encapsulation part 201, and the first filter 61 are sequentially disposed on the first driving part 411 along a direction away from the carrier substrate 30; the second anode portion 422, the second light emitting portion 432, the second cathode portion 442, the second thin film encapsulation portion 452, the second quantum dot portion 12, the second encapsulation portion 202, and the second filter 62 are sequentially disposed on the second driving portion 412 along a direction away from the carrier substrate 30; the third anode portion 423, the third light emitting portion 433, the third cathode portion 443, the third thin film encapsulation portion 453, the third encapsulation portion 203, and the scattering member 63 are sequentially disposed on the third driving portion 413 in a direction away from the carrier substrate 30.
Referring to fig. 5 and 6, fig. 5 is a schematic view of an electronic device according to a fourth embodiment of the present disclosure; fig. 6 isbase:Sub>A cross-sectional view taken along linebase:Sub>A-base:Sub>A of fig. 5. The embodiment of the application further provides the electronic device 1000. The electronic device 1000 may include, but is not limited to, a display-enabled device such as a mobile phone, a telephone, a television, a tablet computer, a camera, a personal computer, a notebook computer, a vehicle-mounted device, and the like. The electronic device 1000 includes a device body 7 and the display panel 1 provided in any of the embodiments above, where the display panel 1 is carried on the device body 7.
In one embodiment, the device body 7 may include, but is not limited to, a middle frame 720, a front case 710, and a rear case 730. The middle frame 720 is used for bearing the display panel 1. The front case 710 is disposed at a periphery of the display panel 1, and is used for encapsulating the display panel 1. The rear casing 730 is disposed on a side of the middle frame 720 facing away from the display panel 1, and the rear casing 730 and the front casing 710 cooperate to accommodate the middle frame 720 and the display panel 1.
Referring to fig. 7, fig. 7 is a flowchart of a method for manufacturing a display panel according to a fifth embodiment of the present disclosure. The method for manufacturing the display panel 1 includes, but is not limited to, steps S100, S300, and S500, and the steps S100, S300, and S500 are described in detail as follows.
S100: a panel blank with a quantum dot layer 10 is provided.
S300: a first encapsulant 21 is formed on the quantum dot layer 10, the first encapsulant 21 having a first refractive index.
S500: a second encapsulant 22 is formed on a side of the first encapsulant 21 facing away from the quantum dot layer 10, the second encapsulant 22 having a second refractive index that is less than the first refractive index.
In this embodiment, the first package 21 is made of a-SiN4: H (amorphous SiN4: H), the second package 22 is made of SiOxNy, x is 1 or 2, and y is 2 or 4. Alternatively, the material of the first package 21 is a-SiN4: H, and the material of the second package 22 is SiO2. Alternatively, the first package 21 is made of SiOxNy, x is 1 or 2, y is 2 or 4, and the second package 22 is made of SiO2.
The refractive index of the package when the a-SiN4: H is used as the packaging material is 1.76 or substantially 1.76, the refractive index of the package when the SiOxNy is used as the packaging material is 1.65 or substantially 1.48, and the refractive index of the package when the SiO2 is used as the packaging material is 1.48 or substantially.
Therefore, when the material of the first encapsulation layer is a-SiN4: H, the material of the second encapsulation layer may be SiOxNy or SiO2, and when the material of the first encapsulation layer is SiOxNy, the material of the second encapsulation layer is SiO2. Namely, the refractive index of the first packaging layer is greater than that of the second packaging layer, so that the light emitted by the quantum dot layer 10 can sequentially pass through the structures with two layers of different refractive indexes and pass through the structure with a large refractive index and then pass through the structure with a small refractive index.
Of course, in other embodiments, the first package 21 and the second package 22 may be made of more materials with different refractive indexes, and it is only necessary that the first refractive index of the first package 21 is greater than the second refractive index of the second package 22, which is not limited in this application.
Referring to fig. 8, fig. 8 is a flowchart illustrating a method for manufacturing a display panel according to a sixth embodiment of the present disclosure. S700 is also included after forming the second encapsulant 22 on the side of the first encapsulant 21 facing away from the quantum dot layer 10 at S500. In other words, the manufacturing method of the display panel 1 includes, but is not limited to, steps S100, S300, S500 and S700, and please refer to the foregoing description about steps S100, S300 and S500, which is not to be traced back here. S700 is described in detail as follows.
S700: a third encapsulation 23 is formed on a side of the second encapsulation 22 facing away from the quantum dot layer 10, the second encapsulation 22 having a third refractive index, the third refractive index being smaller than the second refractive index.
Specifically, when the package assembly 20 has the third package 23, the first package 21 is made of a-SiN 4 H, the material of the second packaging part 22 is SiO x N y The third package 23 is made of SiO 2 。
Of course, in other embodiments, the first package 21, the second package 22 and the third package 23 can be made of more materials with different refractive indexes, and it is only required that the first refractive index of the first package 21 is greater than the second refractive index of the second package 22, and the second refractive index of the second package 22 is greater than the third refractive index of the third package 23, which is not particularly limited in this application.
In the present application, the first package member 21 is made of a-SiN 4 H, the material of the second packaging part 22 is SiO x N y The third package 23 is made of SiO 2 The methods for manufacturing the first package 21, the second package 22 and the third package 23 are illustrated, and should not be construed as limiting the present application.
Referring to fig. 9, fig. 9 is a flowchart included in a process S300 of a display panel manufacturing method according to a fifth embodiment of the present disclosure. At S300, forming the first package 21 on the quantum dot layer 10 includes S310, and S310 is described in detail below.
S310: supply of gaseous SiH 4 、NH 3 And N 2 Formation of a-SiN 4 :H。
Specifically, in the present embodiment, siH 4 、NH 3 And N 2 The gas flow ratio of the three is 25. In other embodiments, siH 4 、NH 3 And N 2 The gas flow ratio of the three can also be changed according to the product, which is not limited in this application.
SiH 4 、NH 3 And N 2 Formation of a-SiN 4 H, if the gas pressure in the first reaction container cavity is more than 40mTorr, a-SiN may be caused 4 The material of H is not pure enough. If the temperature in the first reaction chamber cavity is less than 70 ℃, the first package 21 and the quantum dot layer may be formed10 has poor bonding force and is easy to fall off; if the temperature in the first reaction chamber is higher than 100 ℃, the attenuation of the light emitting layer 43 in the light emitting element 40 may be severe, and the display efficiency and the display effect of the display panel 1 may be reduced.
Therefore, the air pressure in the first reaction container cavity is less than or equal to 40mTorr, and a-SiN can be ensured 4 The material of H is pure enough; the temperature in the first reaction vessel is maintained at 70-100 ℃, which not only ensures that the first package 21 and the quantum dot layer 10 have good bonding force and are not easy to fall off, but also does not affect the attenuation of the luminescent layer 43 in the luminescent component 40.
Alternatively, the gas pressure within the first reaction vessel cavity can be 30mTorr, or 32mTorr, or 35mTorr, or 37mTorr, or 39mTorr, or 40mTorr, or other values less than or equal to 40 mTorr; the temperature in the first reaction vessel may be 70 ℃, or 75 ℃, or 80 ℃, or 86 ℃, or 90 ℃, or 91 ℃, or 100 ℃, or other values within 70 ℃ to 100 ℃.
It should be noted that if the reaction time in the first reaction container cavity is less than 20 minutes, the bonding force between the first package 21 and the quantum dot layer 10 is also poor, and the first package is easy to fall off; if the reaction time in the first reaction vessel cavity is longer than 60 minutes, the production efficiency may be too low. Therefore, the reaction time of the gas in the cavity of the first reaction container is 20-60 minutes, which is the best condition, and not only can the bonding force between the first packaging member 21 and the quantum dot layer 10 be high and not easy to fall off be ensured, but also the production efficiency can be high. Alternatively, the reaction time of the gas in the first reaction vessel cavity may be 20 minutes, or 30 minutes, or 35 minutes, or 45 minutes, or 50 minutes, or 60 minutes, or other values within 20 minutes to 60 minutes.
Referring to fig. 10, fig. 10 is a flowchart illustrating a method for manufacturing a display panel according to a seventh embodiment of the present disclosure. It should be noted that the first package 21 is formed in the first reaction vessel cavity, and the second package 22 is formed in another reaction vessel (second reaction vessel) cavity, so that the first package 21 needs to be transferred, and the transfer process may be accompanied by attachment of impurities, and therefore S400 is further included before S500, in other words, the method for manufacturing the display panel 1 includes, but is not limited to, steps S100, S300, S400, S500, and S700, and the references to steps S100, S300, S500, and S70 refer to the foregoing description, and will not be traced again. S400 is described in detail below.
S400: providing a plurality of ions to a side of the first package 21 away from the carrier substrate 30 to remove impurities.
The plurality of ions includes, but is not limited to, oxygen ions, nitrogen ions, or other ions. A plurality of ions are provided, which can be used to clean the outer surface of the first encapsulation 21 and remove impurities attached to the first encapsulation 21.
Referring to fig. 11, fig. 11 is a flowchart included in a process S500 of a display panel manufacturing method according to a fifth embodiment of the present disclosure. At S500, forming the second encapsulant 22 on the side of the first encapsulant 21 facing away from the quantum dot layer 10 includes S510, where S510 is described in detail below.
S510: providing SiO 2 And SiN 4 H is reacted to form SiO x N y X is 1 or 2, y is 2 or 4.
Specifically, a layer of SiO is coated on the first packaging layer 2 To make SiO 2 And SiN 4 H is reacted to form SiO x N y 。
SiO 2 And SiN 4 H is reacted to form SiO x N y When the temperature in the cavity of the second reaction vessel is lower than 80 ℃, the bonding force between the second package 22 and the first package 21 may be poor, and the second package may easily fall off; if the temperature in the second reaction chamber is higher than 150 ℃, the attenuation of the light emitting layer 43 in the light emitting element 40 may be severe, and the display efficiency and the display effect of the display panel 1 may be reduced.
Therefore, the temperature in the second reaction vessel is maintained at 80 to 150 ℃, which not only ensures that the second package 22 and the first package 21 have good bonding force and are not easy to fall off, but also does not affect the attenuation of the light emitting layer 43 in the light emitting assembly 40.
Alternatively, the temperature within the second reaction vessel may be 80 ℃, or 86 ℃, or 90 ℃, or 91 ℃, or 100 ℃, 110 ℃, or 120 ℃, or 130 ℃, or 150 ℃, or other values within 80 ℃ to 150 ℃.
It should be noted that if the reaction time in the second reaction container cavity is less than 30 minutes, the bonding force between the second package 22 and the first package 21 is not good, and the second package is easy to fall off; if the reaction time in the second reaction vessel cavity is longer than 60 minutes, the production efficiency may be too low. Therefore, the reaction time of the gas in the cavity of the second reaction container is preferably 30-60 minutes, which not only ensures that the second package member 22 and the first package member 21 have high bonding force and are not easy to fall off, but also ensures that the production efficiency is high. Alternatively, the reaction time of the gas in the second reaction vessel cavity may be either 30 minutes, or 35 minutes, or 45 minutes, or 50 minutes, or 60 minutes, or other values within 30 minutes to 60 minutes.
Referring to fig. 12, fig. 12 is a flowchart included in a process S700 of a display panel manufacturing method according to a sixth embodiment of the present disclosure. At S700, forming a third encapsulant 23 on a side of the second encapsulant 22 facing away from the quantum dot layer 10 includes S710, which S710 is described in detail below.
Formation of SiO 2 . This application is on SiO 2 How to form is not particularly limited.
In the related art, for the preparation of quantum dot packaging structure, the ALD (atomic force deposition) method is mainly adopted to deposit Al 2 O 3 The method has good compactness of the deposited film and can be finished at lower temperature (less than 100 ℃). However, this method requires an ultra-low vacuum environment, and has disadvantages such as a large gas flow rate and a slow film formation rate, which hinder mass production.
The application the encapsulation subassembly 20 need not go on under the environment of ultralow vacuum, and this application preparation during encapsulation subassembly 20, does not need great gas flow, and film forming speed is higher, is favorable to display panel 1 reaches electronic equipment 1000's volume production.
While the foregoing is directed to embodiments of the present application, it will be appreciated by those skilled in the art that various changes and modifications may be made without departing from the principles of the application, and it is intended that such changes and modifications be covered by the scope of the application.
Claims (11)
1. A display panel, comprising a quantum dot layer and a package assembly, the quantum dot layer being configured to emit light in a direction toward the package assembly, the package assembly being configured to encapsulate the quantum dot layer, the package assembly comprising:
a first encapsulant disposed on the quantum dot layer, the first encapsulant having a first index of refraction;
and the second packaging piece is arranged on one side of the first packaging piece, which is far away from the quantum dot layer, and has a second refractive index which is smaller than the first refractive index.
2. The display panel of claim 1, wherein the first package is made of a-SiN 4 H, and the material of the second packaging part is SiO x N y X is 1 or 2, y is 2 or 4;
or the first packaging part is made of a-SiN 4 H, and the material of the second packaging part is SiO 2 ；
Or the first packaging part is made of SiO x N y X is 1 or 2, y is 2 or 4, and the material of the second packaging part is SiO 2 。
3. The display panel of claim 1, wherein the package assembly further comprises:
a third package disposed on a side of the second package facing away from the first package, the second package having a third index of refraction, the third index of refraction being less than the second index of refraction.
4. The display panel according to claim 3, wherein the first package is made of a-SiN 4 H, the second packaging part is made of SiO x N y X is 1 or 2, y is 2 or 4, and the material of the third packaging part is SiO 2 。
5. The display panel according to claim 4, wherein the first package has a thickness of 300nm to 600nm, the second package has a thickness of 5nm to 50nm, and the third package has a thickness of 200nm to 500nm.
6. The display panel of claim 5, wherein the display panel further comprises a carrier substrate and a light emitting assembly, the light emitting assembly comprising:
the driving layer is arranged on the bearing substrate;
the anode layer is arranged on one side, away from the bearing substrate, of the driving layer;
the light-emitting layer is arranged on one side of the anode layer, which is far away from the bearing substrate;
the cathode layer is arranged on one side, away from the bearing substrate, of the light-emitting layer;
and the film packaging layer is arranged on one side of the cathode layer, which is deviated from the bearing substrate.
7. The display panel according to claim 6, wherein the display panel further comprises a pixel defining layer, the pixel defining layer comprising a plurality of pixel opening areas and a dam portion surrounding the pixel opening areas, the pixel opening areas comprising a first pixel opening area, a second pixel opening area, and a third pixel opening area arranged at intervals in this order;
the light-emitting layer comprises a first light-emitting part, a second light-emitting part and a third light-emitting part, the first light-emitting part is positioned in the first pixel opening area, the second light-emitting part is positioned in the second pixel opening area, the third light-emitting part is positioned in the third pixel opening area, and the light-emitting layer is used for emitting light of a first color;
the quantum dot layer comprises a first quantum dot part and a second quantum dot part, the first quantum dot part is positioned in the first pixel opening area, the second quantum dot part is positioned in the second pixel opening area, the first quantum dot part is used for emitting light of a second color, and the second quantum dot part is used for emitting light of a third color;
the display panel further includes:
the first light filtering piece is arranged on one side, away from the bearing substrate, of the first quantum dot part and used for passing light rays of a second color;
the second light filtering piece is arranged on one side, away from the bearing substrate, of the second quantum dot part and used for passing light rays of a third color; and
and the scattering piece is arranged on one side of the third light-emitting part, which is deviated from the bearing substrate, and is used for scattering the light of the first color.
8. An electronic device, characterized in that the electronic device comprises:
an apparatus body;
the display panel of any one of claims 1-7 carried by the device body.
9. A method for manufacturing a display panel is characterized by comprising the following steps:
providing a panel blank having a layer of quantum dots;
forming a first encapsulant on the quantum dot layer, the first encapsulant having a first index of refraction;
forming a second encapsulant on a side of the first encapsulant facing away from the quantum dot layer, the second encapsulant having a second index of refraction that is less than the first index of refraction.
10. The method for manufacturing a display panel according to claim 9, wherein the forming of the second package further comprises:
forming a third encapsulant on a side of the second encapsulant facing away from the quantum dot layer, the second encapsulant having a third index of refraction, the third index of refraction being less than the second index of refraction.
11. The method of manufacturing a display panel according to claim 10, wherein forming a first package on the quantum dot layer comprises:
supply of gaseous SiH 4 、NH 3 And N 2 Formation of SiN 4 :H；
Forming a second encapsulant on a side of the first encapsulant facing away from the quantum dot layer includes:
providing SiO 2 And SiN 4 H is reacted to form SiO x N y X is 1 or 2, y is 2 or 4;
forming a third encapsulant on a side of the second encapsulant facing away from the quantum dot layer comprises:
formation of SiO 2 。
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