CN115425142A - Preparation method of magnetoresistive sensor and magnetoresistive sensor - Google Patents
Preparation method of magnetoresistive sensor and magnetoresistive sensor Download PDFInfo
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Abstract
The application relates to a preparation method of a magnetic resistance sensor and the magnetic resistance sensor, comprising the following steps: providing a substrate, wherein the substrate is provided with an integrated circuit; depositing n silicon dioxide film layers on the surface of the substrate, wherein the density of the silicon dioxide film layer which is farthest away from the substrate is greater than that of the silicon dioxide film layer which is closest to the substrate, and n is more than or equal to 2; forming a magnetic material layer on the surface of the silicon dioxide film layer; and forming a laminated structure on the surface of the magnetic material layer, wherein the laminated structure is used for forming a magnetoresistive sensor together with the magnetic material layer, the integrated circuit and the n silicon dioxide film layers. Through multi-step deposition of the silicon dioxide film layers, the film layers form a structure with gradually changed parameters, so that the probability of micro-area component redistribution of the magnetic material at high temperature is reduced, the performance degradation of the magnetic material is avoided, and the performance of the magnetoresistive sensor is improved.
Description
Technical Field
The present application relates to the field of sensor technologies, and in particular, to a method for manufacturing a magnetoresistive sensor and a magnetoresistive sensor.
Background
The Magnetoresistive Sensor is made based on the Magnetoresistive effect of a magnetic material, wherein the basic structure of the Anisotropic Magnetoresistive (AMR) Sensor is a Wheatstone bridge formed by four magnetic thin film resistors, the magnetic thin films have Anisotropic characteristics, the resistance values of the magnetic thin films are related to the included angle between the current direction and the vector of a magnetic field built in the thin films, and the parameters of an external magnetic field can be represented by measuring the change of the resistance values of the thin films, so that the performance of the AMR Magnetoresistive Sensor is determined by the performance of the magnetic thin films. In a typical fabrication process of an AMR magnetoresistive sensor, a structure of silicon dioxide is changed due to a high temperature process, which induces a component redistribution of a magnetic thin film, resulting in a performance degradation of the magnetic thin film, thereby degrading a performance of the magnetoresistive sensor.
Disclosure of Invention
In view of the above, it is necessary to provide a method for manufacturing a magnetoresistive sensor and a magnetoresistive sensor, which are directed to the problem in the prior art that the performance of a magnetic thin film is degraded due to a high temperature process.
In order to achieve the above object, the present application provides a method of manufacturing a magnetoresistive sensor, comprising:
providing a substrate, wherein the substrate is provided with an integrated circuit;
depositing n silicon dioxide film layers on the surface of the substrate, wherein the density of the silicon dioxide film layer farthest from the substrate is greater than that of the silicon dioxide film layer closest to the substrate, and n is greater than or equal to 2;
forming a magnetic material layer on the surface of the silicon dioxide film layer;
and forming a laminated structure on the surface of the magnetic material layer, wherein the laminated structure is used for forming a magnetoresistive sensor together with the magnetic material layer, the integrated circuit and the n silicon dioxide film layers.
In one embodiment, n is greater than or equal to 3, and the depositing n silicon dioxide film layers on the surface of the substrate comprises:
and depositing n silicon dioxide film layers with gradually changed density and/or thickness on the surface of the substrate, wherein the thickness of the silicon dioxide film layers is gradually reduced along the direction far away from the substrate.
In one embodiment, the step of depositing a graded-density n-layer silicon dioxide film on the surface of the substrate comprises:
and sequentially adopting multiple steps of deposition with gradually increased deposition temperature and/or gradually decreased deposition rate to deposit n silicon dioxide film layers on the surface of the substrate.
In one embodiment, where n =4, the depositing n silicon dioxide film layers on the substrate surface sequentially by a plurality of deposition steps with gradually increasing deposition temperature and/or gradually decreasing deposition rate includes:
depositing a first film layer at the speed of 200-300 nm/min, wherein the deposition temperature is 300 ℃;
depositing a second film layer at the speed of 100-200 nm/min, wherein the deposition temperature is 350 ℃;
depositing a third film layer at the speed of 80-100 nm/min, wherein the deposition temperature is 400 ℃;
depositing the fourth film layer at the speed of 30-80 nm/min, wherein the deposition temperature is 450 ℃.
In one embodiment, the first film layer comprises 40% of the total thickness, the second film layer comprises 30% of the total thickness, the third film layer comprises 16% of the total thickness, and the fourth film layer comprises 14% of the total thickness, wherein the total thickness is the sum of the thicknesses of the n silicon dioxide film layers.
In one embodiment, n is greater than or equal to 4, and the depositing n silicon dioxide film layers on the surface of the substrate comprises:
and depositing n silicon dioxide film layers on the surface of the substrate, wherein the density of m silicon dioxide film layers is changed alternately, and m is less than or equal to n.
In one embodiment, n is greater than or equal to 5, n silicon dioxide film layers are deposited on the surface of the substrate, wherein the density of m silicon dioxide film layers is changed alternately, and the method comprises the following steps:
depositing a first film layer on the surface of the substrate;
and alternately depositing a second film layer and a third film layer on the surface of the first film layer, wherein the density of the second film layer is greater than that of the first film layer and is less than that of the third film layer.
In one embodiment, where n =5, the depositing a first layer on the surface of the substrate includes:
depositing a first film layer at the speed of 200-300 nm/min, wherein the deposition temperature is 300 ℃;
alternately depositing a second film and a third film on the surface of the first film, comprising:
depositing a layer of the second film layer at the speed of 80-100 nm/min, wherein the deposition temperature is 400 ℃;
depositing a layer of the third film layer at the speed of 30-80 nm/min, wherein the deposition temperature is 450 ℃;
depositing another layer of the second film layer at the speed of 80-100 nm/min, wherein the deposition temperature is 400 ℃;
depositing another third film layer at the speed of 30-80 nm/min, wherein the deposition temperature is 450 ℃.
In one embodiment, the first film layer accounts for 60% of the total thickness, the second film layer accounts for 10% of the total thickness, and the third film layer accounts for 10% of the total thickness, wherein the total thickness is the sum of the thicknesses of the n silicon dioxide film layers.
In one embodiment, a method of manufacturing a magnetoresistive sensor according to any of claims 1 to 9 is used.
According to the preparation method of the magnetoresistive sensor, the silicon dioxide film layer is deposited in multiple steps, the silicon dioxide film layer forms a structure with gradually changed parameters, the density of the silicon dioxide film layer closest to the magnetic material layer is high, and based on the structure, the influence of the property change of the silicon dioxide film layer at high temperature on the magnetic material is small, so that the probability of micro-area component redistribution of the magnetic material in the high-temperature process is greatly reduced, and the performance of the magnetoresistive sensor is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the description of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the description below are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic flow chart illustrating a method for manufacturing a magnetoresistive sensor according to an embodiment;
FIG. 2 is a schematic diagram of a magnetoresistive sensor according to an embodiment;
fig. 3 is a graph comparing magneto-electric conversion characteristics of the example and the comparative example provided in the example.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," or "having," and the like, specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, in this specification, the term "and/or" includes any and all combinations of the associated listed items.
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating a manufacturing method of a magnetoresistive sensor according to an embodiment.
The application provides a method for manufacturing a magnetoresistive sensor, which comprises steps S100, S200, S300 and S400, and is specifically as follows.
Step S100: a substrate is provided, the substrate being provided with an integrated circuit.
Generally, an integrated circuit and a magnetic material are fabricated on a semiconductor substrate, active devices, passive elements and wires required in the circuit are interconnected according to a certain circuit, and the whole integrated circuit is integrated on the substrate to form an integrated circuit having a required circuit function, and then the magnetic material is disposed on a metal wiring layer of the integrated circuit. Optionally, the substrate may be doped locally to form a PN junction, an ohmic contact, and the like, so as to achieve the purpose of changing the electrical properties of the semiconductor.
In this embodiment, a silicon wafer may be used as a substrate, and the silicon wafer may be pretreated. The pre-processing includes fabricating corresponding circuit devices and conductive pads on the silicon wafer using CMOS or other standard IC processes, with the electrical connection between the magnetic material and the circuit devices on the substrate being made through the conductive pads. Specifically, in this embodiment, a CMOS process may be Integrated in a silicon wafer, and after an Application Specific Integrated Circuit (ASIC) is manufactured, an insulating dielectric layer (e.g., silicon dioxide) may be covered on the surface of the ASIC, and for this reason, a Chemical Mechanical Polishing (CMP) technique may be used to roughly polish the insulating dielectric layer on the surface of the ASIC Circuit, so as to achieve surface planarization.
Step S200: and depositing n silicon dioxide film layers on the surface of the substrate, wherein the density of the silicon dioxide film layer farthest from the substrate is greater than that of the silicon dioxide film layer closest to the substrate, and n is more than or equal to 2.
In one embodiment, a multi-step Deposition of a silicon dioxide film layer may be performed on the substrate surface using Plasma Enhanced Chemical Vapor Deposition (PECVD), the total thickness of the film layer being about 500nm. The PECVD process ionizes a gas containing atoms of a thin film component by means of microwave or radio frequency, etc., and forms plasma locally, which has strong chemical activity, is easy to react, and can deposit a desired thin film on a substrate. After the silicon dioxide film layer is deposited, the silicon dioxide film layer is finely ground, so that the Rq (root mean square roughness) of the silicon dioxide film layer is less than or equal to 0.6nm, and the film layer with higher flatness is obtained, and the film layer can have good surface contact characteristics with materials adjacent to the upper layer, so that a buffer material is ensured between the substrate and the magnetic material layer, and the magnetic material is distributed more uniformly.
Step S300: and forming a magnetic material layer on the surface of the silicon dioxide film layer.
It can be understood that the magnetic material layer has a strong magnetic anisotropy. In one embodiment, a permalloy film (Ni) is used 81 Fe 19 ) As the magnetic material layer, a permalloy film can be grown on the surface of the silicon dioxide film layer by adopting the processes of sputtering, evaporation and the like, then the permalloy film is subjected to patterning treatment by using the photoetching and etching processes, and meanwhile, a lead window is etched, wherein the pattern can be in a required geometric shape, such as a linear pattern, a serpentine pattern and the like. Alternatively, the processed film can be arranged in a strip form to form a planar linear array so as to increase the area of the magnetic resistance sensing magnetic field.
Step S400: and forming a laminated structure on the surface of the magnetic material layer, wherein the laminated structure is used for forming the magnetoresistive sensor together with the magnetic material layer, the integrated circuit and the n silicon dioxide film layers.
The silicon dioxide film layer is prepared by a film forming process of multi-step deposition, a film layer structure with gradually changed parameters can be formed, and meanwhile, the silicon dioxide film layer furthest away from the substrate has high density, so that the probability of micro-area component redistribution of the magnetic material layer in the subsequent heating and annealing process is reduced, and the influence on the performance of the magnetic material is reduced.
In one embodiment, when n ≧ 3, the step S200 of depositing n silicon dioxide film layers on the substrate surface includes a step S210.
Step S210: and depositing n silicon dioxide film layers with gradually changed density and/or thickness on the surface of the substrate, wherein the thickness of the silicon dioxide film layers is gradually reduced along the direction far away from the substrate.
It should be noted that, in the structure with three parameters gradually changed, the density of the layer of silicon dioxide closest to the magnetic material is high, that is, the density of the layer of silicon dioxide closest to the substrate is greater than that of the layer of silicon dioxide closest to the substrate.
In one embodiment, n is greater than or equal to 3, and n silicon dioxide film layers with gradually changed densities are deposited on the surface of the substrate, namely the thickness of each layer is the same, and only the density is gradually changed. In other embodiments, depositing the n-layer silicon dioxide film with gradually changed density on the surface of the substrate comprises: and sequentially adopting multiple steps of deposition with gradually increased deposition temperature and/or gradually decreased deposition rate to deposit n silicon dioxide film layers on the surface of the substrate. Specifically, the manner of changing the density of the silicon dioxide film may be to gradually increase the deposition temperature or gradually decrease the deposition rate, or to gradually increase the temperature and gradually decrease the deposition rate at the same time, and in addition, a suitable doping material may be added or parameters such as the deposition pressure, the gas flow rate, the power of the power supply, and the distance between the upper electrode and the lower electrode may be changed to change the density of the film.
In one embodiment, n is greater than or equal to 3, and n silicon dioxide film layers with gradually changed density and thickness are deposited on the surface of the substrate, namely, the density and the thickness of each layer are gradually changed. In other embodiments, n silicon dioxide film layers are deposited on the substrate surface by a multi-step deposition with gradually increasing deposition temperature and gradually decreasing deposition rate, wherein n =4 comprises: depositing a first film layer at the speed of 200-300 nm/min, wherein the deposition temperature is 300 ℃; depositing a second film layer at the speed of 100-200 nm/min, wherein the deposition temperature is 350 ℃; depositing a third film layer at the speed of 80-100 nm/min, wherein the deposition temperature is 400 ℃; depositing a fourth film layer at the speed of 30-80 nm/min, wherein the deposition temperature is 450 ℃; the first film layer accounts for 40% of the total thickness, the second film layer accounts for 30% of the total thickness, the third film layer accounts for 16% of the total thickness, and the fourth film layer accounts for 14% of the total thickness, wherein the total thickness is the sum of the thicknesses of the n silicon dioxide film layers. The density of each film layer can be changed by controlling the deposition temperature and deposition rate, and the density of each film layer in this embodiment has a size relationship as follows: the first film layer < the second film layer < the third film layer < the fourth film layer, and the thickness of each film layer is reduced in sequence along the direction away from the substrate, so that the residual stress of the film layers can be reduced.
In one embodiment, n is greater than or equal to 3, and n silicon dioxide film layers with gradually changed thickness are deposited on the surface of the substrate. That is, the density of each film layer is the same, the density may be greater than that of the first film layer in the previous embodiment, and the thickness gradually decreases along the direction away from the substrate, so that the property change of the film layer structure in the high temperature process does not affect the magnetic material layer.
In one embodiment, when n ≧ 4, the step S200 for depositing n silicon dioxide films on the substrate surface includes a step S220.
Step S220: and depositing n silicon dioxide film layers on the surface of the substrate, wherein the density of the m silicon dioxide film layers is alternately changed, and m is less than or equal to n. Specifically, the thickness of each layer is not limited.
Wherein, when n ≧ 5, step S220 includes step S221 and step S222.
Step S221: depositing a first film on the surface of the substrate.
Step S222: and alternately depositing a second film layer and a third film layer on the surface of the first film layer, wherein the density of the second film layer is greater than that of the first film layer and is less than that of the third film layer.
In an embodiment, when n =5, step S221 includes: depositing a first film layer at a speed of 200-300 nm/min, wherein the deposition temperature is 300 ℃, and the step S222 comprises: depositing a second film layer at the speed of 80-100 nm/min, wherein the deposition temperature is 400 ℃; depositing a third film layer at the speed of 30-80 nm/min, wherein the deposition temperature is 450 ℃; depositing another second film layer at the speed of 80-100 nm/min, wherein the deposition temperature is 400 ℃; depositing another third film layer at the speed of 30-80 nm/min, wherein the deposition temperature is 450 ℃.
And the density of the film layers is enhanced by adopting a method of gradually increasing the deposition temperature and gradually decreasing the deposition rate, wherein the density of the second film layer is smaller than that of the third film layer, and the second film layer and the third film layer are alternately formed. Specifically, the first film layer accounts for 60% of the total thickness, the second film layer accounts for 10% of the total thickness, the third film layer accounts for 10% of the total thickness, and the total thickness is the sum of the thicknesses of the n silicon dioxide film layers. The density distribution from the first film layer to the other third film layer is as follows: most sparse/denser/densest.
In one embodiment, the step S400 of forming a stacked structure on the surface of the magnetic material layer, the stacked structure being used to form a magnetoresistive sensor together with the magnetic material layer, the integrated circuit and the n silicon dioxide film layers includes steps S410 and S420.
Step S410: a sacrificial layer, a metal layer and an insulating layer are sequentially formed on the magnetic material layer.
In one embodiment, the material may be a permalloy film (Ni) 81 Fe 19 ) The surface is deposited with sacrificial layer and metal layer by evaporation or sputtering, the sacrificial layer can be titanium or titanium tungsten, the metal layer can be aluminum or silicon-aluminum alloy. In this embodiment, preferably, titanium tungsten and aluminum are used as the sacrificial layer and the metal layer, respectively, and then the titanium tungsten and the aluminum are patterned by photolithography and chemical etching processes to form a lead window, exposing the permalloy film. Wherein titanium tungsten can separate the aluminum from the permalloy film, and the aluminum layer can be used to provide an electrical connection between the substrate and the permalloy film, since the aluminum needs to be etched with an acid that can damage the permalloy film. The insulating layer (e.g. silicon nitride) serves as the overall magnetoresistanceThe protective layer of the sensor is provided with a hole, and only the part contacting with the outside is exposed, so that each layer is protected from being damaged and polluted.
Step S420: and annealing the magnetoresistive sensor.
It should be noted that the annealing process may occur after the magnetic material layer is formed, or after the magnetic material layer is etched, or after the insulating layer is deposited, and the three cases are not different, so the embodiment is not limited thereto. Optionally, after the insulating layer is deposited, annealing treatment is performed, wherein the annealing temperature is 400-450 ℃, and the annealing can eliminate lattice defects and restore lattice order. This example provides permalloy thin films (Ni) before and after annealing 81 Fe 19 ) The micro-area component proportion of (a), wherein, a silicon dioxide film layer is deposited in one step as a comparison scheme, specifically, please refer to table 1, which can be obtained from data in the table, the implementation is that the iron-nickel ratio is not changed before and after annealing through multi-step deposition of the silicon dioxide film layer, while the iron-nickel ratio in the comparison scheme is changed, so that the influence of the silicon dioxide film layer structure obtained through multi-step deposition on the permalloy film in the annealing process is smaller.
TABLE 1 iron-nickel ratio of one-step and multistep deposited silica films
According to the preparation method of the magnetoresistive sensor, n silicon dioxide film layers are grown through a multi-step deposition process to form a structure with gradually changed parameters, and meanwhile, the density of the silicon dioxide layer closest to the magnetic material is high, so that the influence of the property change (such as refraction degree, H content and the like) of the silicon dioxide on the magnetic material layer in the subsequent annealing process is greatly reduced, the probability of micro-region component redistribution of the magnetic material at high temperature is reduced, the performance degradation of the magnetic material is avoided, and the performance of the magnetoresistive sensor is improved.
The application also provides a magnetic resistance sensor which can be manufactured by adopting the manufacturing method of the magnetic resistance sensor provided by the embodiment, the probability of micro-area component redistribution of the magnetic material layer in the annealing process can be reduced, the weak magnetic field measurement in the geomagnetic field range can be well sensed, various proximity switches or various displacement, angle and rotating speed sensors and the like can be manufactured, and the magnetic resistance sensor can be applied to compasses, rotating position sensing, linear position measurement and the like in various navigation systems. In one embodiment, referring specifically to fig. 2 and 3, fig. 2 is a structural diagram of a position sensor capable of detecting the movement of an object or determining its relative position measured from a predetermined reference point, wherein the magnetic material has magnetostrictive properties, and when a magnetic field is applied, the magnetic material changes its size or shape, so that the position of the object can be determined based on the principle.
In addition, a comparison is made with the present embodiment by using a technique of depositing a silicon dioxide film layer in one step as a comparison scheme, and fig. 3 is a comparison graph of magnetoelectric conversion characteristic curves of the position magnetic resistance sensor manufactured by the embodiment and the comparison scheme, where the magnetoelectric conversion characteristic is the most basic characteristic of the magnetic resistance sensor, and specifically, data plotting is performed by using magnetic induction as a horizontal axis and output voltage as a vertical axis. As can be seen from the figure, the slope of the present embodiment is higher than that of the comparative scheme, and the magnetoresistive sensor of the present embodiment has higher sensitivity and better performance.
It should be understood that, although the steps in the flowchart of fig. 1 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a portion of the steps in fig. 1 may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, which are not necessarily performed in sequence, but may be performed in turn or alternately with other steps or at least a portion of the other steps or stages.
In the description herein, references to "some embodiments," "other embodiments," "desired embodiments," or the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic depictions of the above terms do not necessarily refer to the same embodiment or example.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features of the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several implementation modes of the present application, and the description thereof is specific and detailed, but not construed as limiting the scope of the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent application shall be subject to the appended claims.
Claims (10)
1. A method of making a magnetoresistive sensor, comprising:
providing a substrate, wherein the substrate is provided with an integrated circuit;
depositing n silicon dioxide film layers on the surface of the substrate, wherein the density of the silicon dioxide film layer which is farthest away from the substrate is greater than that of the silicon dioxide film layer which is closest to the substrate, and n is more than or equal to 2;
forming a magnetic material layer on the surface of the silicon dioxide film layer;
and forming a laminated structure on the surface of the magnetic material layer, wherein the laminated structure is used for forming a magnetoresistive sensor together with the magnetic material layer, the integrated circuit and the n silicon dioxide film layers.
2. The method of claim 1, wherein n is greater than or equal to 3, and the depositing n silicon dioxide film layers on the surface of the substrate comprises:
and depositing n silicon dioxide film layers with gradually changed density and/or thickness on the surface of the substrate, wherein the thickness of the silicon dioxide film layers is gradually reduced along the direction far away from the substrate.
3. The method of claim 2, wherein depositing a graded-density n-layer silicon dioxide film on the surface of the substrate comprises:
and sequentially adopting multiple steps of deposition with gradually increased deposition temperature and/or gradually decreased deposition rate to deposit n silicon dioxide film layers on the surface of the substrate.
4. The method for preparing a magnetoresistive sensor according to claim 3, wherein n =4, and the n silicon dioxide film layers are deposited on the surface of the substrate by adopting a plurality of deposition steps with gradually increased deposition temperature and/or gradually decreased deposition rate in sequence, and the method comprises the following steps:
depositing a first film layer at the speed of 200-300 nm/min, wherein the deposition temperature is 300 ℃;
depositing a second film layer at the speed of 100-200 nm/min, wherein the deposition temperature is 350 ℃;
depositing a third film layer at the speed of 80-100 nm/min, wherein the deposition temperature is 400 ℃;
depositing the fourth film layer at the speed of 30-80 nm/min, wherein the deposition temperature is 450 ℃.
5. A method of manufacturing a magnetoresistive sensor according to claim 4, characterized in that the first film layer accounts for 40% of the total thickness, the second film layer accounts for 30% of the total thickness, the third film layer accounts for 16% of the total thickness and the fourth film layer accounts for 14% of the total thickness, the total thickness being the sum of the thicknesses of the n silicon dioxide film layers.
6. The method for preparing a magnetoresistive sensor according to claim 1, wherein n is greater than or equal to 4, and the depositing n silicon dioxide film layers on the surface of the substrate comprises:
and depositing n silicon dioxide film layers on the surface of the substrate, wherein the density of m silicon dioxide film layers is changed alternately, and m is less than or equal to n.
7. The method for preparing a magnetoresistive sensor according to claim 6, wherein n is greater than or equal to 5, and n silicon dioxide film layers are deposited on the surface of the substrate, wherein the density of m silicon dioxide film layers is changed alternately, and the method comprises the following steps:
depositing a first film layer on the surface of the substrate;
and alternately depositing a second film layer and a third film layer on the surface of the first film layer, wherein the density of the second film layer is greater than that of the first film layer and is less than that of the third film layer.
8. The method of claim 7, wherein n =5, and depositing a first film layer on the substrate surface comprises:
depositing a first film layer at the speed of 200-300 nm/min, wherein the deposition temperature is 300 ℃;
alternately depositing a second film and a third film on the surface of the first film, comprising:
depositing a layer of the second film layer at the speed of 80-100 nm/min, wherein the deposition temperature is 400 ℃;
depositing a layer of the third film layer at the speed of 30-80 nm/min, wherein the deposition temperature is 450 ℃;
depositing another layer of the second film layer at the speed of 80-100 nm/min, wherein the deposition temperature is 400 ℃;
depositing another third film layer at the speed of 30-80 nm/min, wherein the deposition temperature is 450 ℃.
9. The method of claim 8, wherein the first film layer comprises 60% of the total thickness, the second film layer comprises 10% of the total thickness, and the third film layer comprises 10% of the total thickness, wherein the total thickness is the sum of the thicknesses of the n silicon dioxide film layers.
10. A magnetoresistive sensor, characterized by being manufactured by a method of manufacturing a magnetoresistive sensor according to any of claims 1 to 9.
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