CN115425115A - 一种TOPCon电池及其制作方法 - Google Patents
一种TOPCon电池及其制作方法 Download PDFInfo
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Abstract
本发明涉及光伏发电组件领域,特别是涉及一种TOPCon电池及其制作方法,通过在N型基体硅的迎光面进行硼扩散,得到P型扩散层;在所述N型基体硅的背光面依次设置遂穿氧化层及非晶硅层;对所述非晶硅层进行磷掺杂,得到N+多晶硅层;所述N+多晶硅层的厚度范围为100纳米至120纳米,掺杂浓度的范围为4.59E+20至6.34E+20,包括端点值;在得到所述N+多晶硅层之后,在硅片的迎光面设置正面复合钝化层,背光面设置背面复合钝化层,再设置正面电极及负面电极。本发明中获得相比与现有技术更薄,同时掺杂浓度更低的N+多晶硅,大大降低了背面的复合中心数量,也就提升了TOPCon太阳能电池的光电转化效率。
Description
技术领域
本发明涉及光伏发电组件领域,特别是涉及一种TOPCon电池及其制作方法。
背景技术
伴随化石能源的日趋紧张,以及社会的各方面的快速发展,工业上的能源消耗也导致出现了一些环境污染的问题,我国作为人口大国和工业大国在进入21世纪后处于快速发展的状态,所以对于能源的需求特别大,导致我国能源缺口较大,同时工业的快速发展不可避免的会破坏生态环境。这对经济的可持续发展和人类环境健康造成严重的影响,并且生态环境遭到破坏和传统能源面临枯竭,致使人们迫切需要一种清洁的,无污染的,可持续开发的一种绿色能源,太阳能作为最具潜力的开持续开发的清洁能源就格外重要;
由于TOPCON(隧穿氧化层钝化接触)有一层超薄的氧化层与一层重掺杂的多晶硅层组成,可在实现太阳能电池良好的背表面钝化的同时,进行选择性载流子收集,提高光电转化效率,同时与目前PERC技术路线兼容性极高。
但目前行业内TOPCON电池的多晶硅层厚度基本在150-160nm,在该厚度下的多晶硅层可以有效保护多晶硅层,减少划伤对硅片表面的破坏,但同时这种多晶硅也会导致磷原子沉积量的过渡聚集导致表面缺陷增多,复合中心也在增加,也使得电子传输路径增加,在电池片出厂测试的过程中,出现大量暗片。
因此,如何提供一种有效降低TOPCON电池背面复合中心,降低电池片暗片的方法,就成了本领域技术人员亟待解决的问题。
发明内容
本发明的目的是提供一种TOPCon电池及其制作方法,以解决现有技术中TOPCON电池复合中心多,暗片现象严重的问题。
为解决上述技术问题,本发明提供一种TOPCon电池的制作方法,包括:
在N型基体硅的迎光面进行硼扩散,得到P型扩散层;
在所述N型基体硅的背光面依次设置遂穿氧化层及非晶硅层;
对所述非晶硅层进行磷掺杂,得到N+多晶硅层;所述N+多晶硅层的厚度范围为100纳米至120纳米,掺杂浓度的范围为4.59E+20至6.34E+20,包括端点值;
在得到所述N+多晶硅层之后,在硅片的迎光面设置正面复合钝化层,背光面设置背面复合钝化层,再设置正面电极及负面电极。
可选地,在所述的TOPCon电池的制作方法中,在设置所述非晶硅层的过程中,前硅烷通量的范围为200sccm至350sccm,后硅烷通量的范围为1400sccm至1700sccm,包括端点值。
可选地,在所述的TOPCon电池的制作方法中,在设置所述非晶硅层的过程的环境温度的范围为600摄氏度至615摄氏度,包括端点值。
可选地,在所述的TOPCon电池的制作方法中,在设置所述非晶硅层的过程的沉积时间的范围为1500秒至1600秒,包括端点值。
可选地,在所述的TOPCon电池的制作方法中,在对所述非晶硅层进行磷掺杂的过程中,磷扩第一步沉积时间的范围为1020秒至1060秒,磷扩第二步沉积时间的范围为130秒至170秒,包括端点值。
可选地,在所述的TOPCon电池的制作方法中,所述遂穿氧化层设置过程中的通氧量的范围为32000sccm至38000sccm,包括端点值。
可选地,在所述的TOPCon电池的制作方法中,所述遂穿氧化层设置过程中的氧化时间的范围为400秒至450秒,包括端点值。
一种TOPCon电池,包括N型基体硅,从所述N型基体硅向迎光面依次包括P型扩散层、正面复合钝化层及正面电极;
从所述N型基体硅向迎光面依次包括遂穿氧化层、N+多晶硅层、背面复合钝化层及背面电极;
所述N+多晶硅层的厚度范围为100纳米至120纳米,包括端点值。
可选地,在所述的TOPCon电池中,所述遂穿氧化层的厚度范围为1.5纳米至1.8纳米,包括端点值。
可选地,在所述的TOPCon电池中,所述N+多晶硅层的方阻的范围为40欧姆至50欧姆,包括端点值。
本发明所提供的TOPCon电池的制作方法,通过在N型基体硅的迎光面进行硼扩散,得到P型扩散层;在所述N型基体硅的背光面依次设置遂穿氧化层及非晶硅层;对所述非晶硅层进行磷掺杂,得到N+多晶硅层;所述N+多晶硅层的厚度范围为100纳米至120纳米,掺杂浓度的范围为4.59E+20至6.34E+20,包括端点值;在得到所述N+多晶硅层之后,在硅片的迎光面设置正面复合钝化层,背光面设置背面复合钝化层,再设置正面电极及负面电极。
本发明中通过控制生产过程中的温度及沉积时间,从而获得相比与现有技术更薄,同时掺杂浓度更低的N+多晶硅,大大降低了背面的复合中心数量,减少了成本品种的暗片问题,实现了电池片开路电压、短路电流的提升,换言之,也就提升了TOPCon太阳能电池的光电转化效率。本发明同时还提供了一种具有上述有益效果的TOPCon电池。
附图说明
为了更清楚的说明本发明实施例或现有技术的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单的介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明提供的TOPCon电池的制作方法的一种具体实施方式的流程示意图;
图2为本发明提供的TOPCon电池的一种具体实施方式的结构示意图。
具体实施方式
为了使本技术领域的人员更好地理解本发明方案,下面结合附图和具体实施方式对本发明作进一步的详细说明。显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明的核心是提供一种TOPCon电池的制作方法,其一种具体实施方式的流程示意图如图1所示,称其为具体实施方式二,包括:
S101:在N型基体硅10的迎光面进行硼扩散,得到P型扩散层20。
S102:在所述N型基体硅10的背光面依次设置遂穿氧化层30及非晶硅层。
在本步骤中,在设置所述非晶硅层的过程中,前硅烷通量的范围为200sccm至350sccm,如200.0sccm、268.1sccm或350.0sccm中的任一个;后硅烷通量的范围为1400sccm至1700sccm,包括端点值,如1400sccm、1534.1sccm或1700.0sccm中的任一个。
另外,在设置所述非晶硅层的过程的环境温度的范围为600摄氏度至615摄氏度,包括端点值,如600.0摄氏度、607.5摄氏度或615.0摄氏度中的任一个;相应地,在设置所述非晶硅层的过程的沉积时间的范围为1500秒至1600秒,包括端点值,如1500.0秒、1536.7秒或1600.0秒中的任一个。
还有,所述遂穿氧化层30设置过程中的通氧量的范围为32000sccm至38000sccm,包括端点值,如32000.0sccm、35467.1sccm中的任一个;所述遂穿氧化层30设置过程中的氧化时间的范围为400秒至450秒,包括端点值,如400.0秒、421.8秒或450.0秒中的任一个。
S103:对所述非晶硅层进行磷掺杂,得到N+多晶硅层40;所述N+多晶硅层40的厚度范围为100纳米至120纳米,掺杂浓度的范围为4.59E+20至6.34E+20,包括端点值。
在对所述非晶硅层进行磷掺杂的过程中,磷扩第一步沉积时间的范围为1020秒至1060秒,;磷扩第二步沉积时间的范围为130秒至170秒,包括端点值。
S104:在得到所述N+多晶硅层40之后,在硅片的迎光面设置正面复合钝化层,背光面设置背面复合钝化层60,再设置正面电极70及负面电极。
本具体实施方式所提供的TOPCon电池的制作方法,可与前文中的TOPCon电池形成对照,具体的改进方式与技术细节可参考前文,在此不再展开赘述。
本具体实施方式中,进一步具体地提供了所述TOPCon电池在生产过程中的具体参数,重点限定了所述N+多晶硅层40在生长于掺杂过程中的相关参数,其目的是使所述N+多晶硅层40在现有技术的基础上,更薄,掺杂浓度更低,这样可有效减少所述N+多晶硅层40中的载流子复合中心,相当于减少了硅片中的暗片现象,同时由于减薄了所述N+多晶硅层40,也使载流子经过的路程更短,进一步降低了载流子复合此外,本发明还进一步对所述遂穿氧化层30的设置工艺做了限定,使所述遂穿氧化层30更均匀,达到更好的遂穿效果,提升电池片的光电转化效率。
下面举一例说明所述TOPCon电池的制作方法在实际操作中的具体步骤,包括:
步骤1,对原硅片进行制绒,在硅片的表面形成陷光结构;
步骤2,对制绒后的硅片进行高温硼扩散在硅片表现形成P+层及BSG保护层
步骤3,使用氢氟酸去绕度到非扩散面的硼硅玻璃;
步骤4,对上述硅片进行背面抛光
步骤5,对上述硅片进行遂穿层(二氧化硅薄膜)沉积,厚度约1.5-1.8nm左右,并在遂穿氧化层上沉积非晶硅层厚度约在100-120nm
步骤6,非晶硅层进行磷摻杂,形成N+层,并在硅片双面形成PSG层,使得掺杂后的所述非晶硅层与所述隧穿氧化层组成TopCon结构;其中,隧穿氧化层沉积非晶硅层为采用LPVCD、进行双面沉积;
步骤7,去除所述P+层面上的BSG层及POLY层和PSG层,同时需提高背面磷扩方阻,减少磷原子的沉积量;
步骤8,在半成品硅片表面制备氧化铝钝化层:
步骤9,将所述硅片沉积正面氮氧化硅,背面氮化硅钝化层形成减反射膜
步骤10,对所述硅片进行丝网印刷并烧结形成电极。
本发明所提供的TOPCon电池的制作方法,通过在N型基体硅10的迎光面进行硼扩散,得到P型扩散层20;在所述N型基体硅10的背光面依次设置遂穿氧化层30及非晶硅层;对所述非晶硅层进行磷掺杂,得到N+多晶硅层40;所述N+多晶硅层40的厚度范围为100纳米至120纳米,掺杂浓度的范围为4.59E+20至6.34E+20,包括端点值;在得到所述N+多晶硅层40之后,在硅片的迎光面设置正面复合钝化层,背光面设置背面复合钝化层60,再设置正面电极70及负面电极。本发明中通过控制生产过程中的温度及沉积时间,从而获得相比与现有技术更薄,同时掺杂浓度更低的N+多晶硅,大大降低了背面的复合中心数量,减少了成本品种的暗片问题,实现了电池片开路电压、短路电流的提升,换言之,也就提升了TOPCon太阳能电池的光电转化效率。
本发明还提供了一种TOPCon电池,其一种具体实施方式的结构示意图如图1所示,称其为具体实施方式一,包括N型基体硅10,从所述N型基体硅10向迎光面依次包括P型扩散层20、正面复合钝化层及正面电极70;
从所述N型基体硅10向迎光面依次包括遂穿氧化层30、N+多晶硅层40、背面复合钝化层60及背面电极80;
所述N+多晶硅层40的厚度范围为100纳米至120纳米,包括端点值。
本发明通过减少磷原子的沉积量及掺杂量,以达到在所述N+多晶硅层40,减少复合中心,提高Uoc、Isc及转换效率的目标,并减少暗片产生。
优选地,所述N+多晶硅层40的掺杂浓度的范围为4.59E+20至6.34E+20,包括端点值。通过设置比现有技术中更低的掺杂浓度,大大降低了背面的复合中心数量,减少了成本品种的暗片问题。
作为一种具体实施方式,所述遂穿氧化层30的厚度范围为1.5纳米至1.8纳米,包括端点值,如1.50纳米、1.62纳米或1.80纳米中的任一个,改善遂穿氧化层30的均匀性。
另外,所述N+多晶硅层40的方阻的范围为40欧姆至50欧姆,包括端点值,如40.0欧姆、42.8欧姆至50.0欧姆中的任一个。上述数据范围为根据大量理论计算与实际检验后得到的最佳范围,上述为在保障所述N+多晶硅层40能提供足够的自由载流子的同时,也避免了过大的掺杂浓度导致的缺陷过多的问题。
作为一种具体实施方式,所述正面复合钝化层包括正面氧化铝层51及正面氮氧化硅层52中的至少一种,更进一步地,所述正面复合钝化层从靠近所述N型基体硅10的一侧向迎光面依次包括所述正面氧化铝层51及所述正面氮氧化硅层52,如图1所示,氧化铝可起到很好的表面钝化效果,而所述正面氮氧化硅层52可起到增透作用,使更多的光线被吸收,从而提升电池片的光电转化效率。
作为另一种具体实施方式,所述背面复合钝化层60包括背面氮化硅层及背面氮氧化硅层中的至少一种。更进一步地,所述背面氮化硅层和/或所述背面氮氧化硅层从所述靠近所述N型基体硅10的一侧向背光面,折射率逐渐降低,可有效增加透射到太阳能电池片的背光面的光线的反射率,提高光线的利用率,进而提升光电转化效率。
优选地,所述TOPCon电池的迎光面包括绒面陷光结构,换言之,所述TOPCon电池的迎光面进行过制绒处理,所述绒面陷光结构使太阳能电池迎光面的反射率大大降低,提高光线利用率。
另外,所述正面电极70为银电极或铝电极;所述背面电极80为银电极。上述的电极材料配置可获得更加的导电性能及与硅片之间的连接拉力,在提升导电效果的同时,提升电池的结构稳定性。
本发明所提供的TOPCon电池,包括N型基体硅10,从所述N型基体硅10向迎光面依次包括P型扩散层20、正面复合钝化层及正面电极70;从所述N型基体硅10向迎光面依次包括遂穿氧化层30、N+多晶硅层40、背面复合钝化层60及背面电极80;所述N+多晶硅层40的厚度范围为100纳米至120纳米,包括端点值。本发明中通过减薄TOPCon电池背面的N+多晶硅层40的厚度,大大缩短了载流子穿过所述N+多晶硅层40所需的时间,减少了载流子复合,也就减少了成本品种的暗片问题,实现了电池片开路电压、短路电流的提升,换言之,也就提升了TOPCon太阳能电池的光电转化效率。
本说明书中各个实施例采用递进的方式描述,每个实施例重点说明的都是与其它实施例的不同之处,各个实施例之间相同或相似部分互相参见即可。对于实施例公开的装置而言,由于其与实施例公开的方法相对应,所以描述的比较简单,相关之处参见方法部分说明即可。
需要说明的是,在本说明书中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上对本发明所提供的一种TOPCon电池及其制作方法进行了详细介绍。本文中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以对本发明进行若干改进和修饰,这些改进和修饰也落入本发明权利要求的保护范围内。
Claims (10)
1.一种TOPCon电池的制作方法,其特征在于,包括:
在N型基体硅的迎光面进行硼扩散,得到P型扩散层;
在所述N型基体硅的背光面依次设置遂穿氧化层及非晶硅层;
对所述非晶硅层进行磷掺杂,得到N+多晶硅层;所述N+多晶硅层的厚度范围为100纳米至120纳米,掺杂浓度的范围为4.59E+20至6.34E+20,包括端点值;
在得到所述N+多晶硅层之后,在硅片的迎光面设置正面复合钝化层,背光面设置背面复合钝化层,再设置正面电极及负面电极。
2.如权利要求1所述的TOPCon电池的制作方法,其特征在于,在设置所述非晶硅层的过程中,前硅烷通量的范围为200sccm至350sccm,后硅烷通量的范围为1400sccm至1700sccm,包括端点值。
3.如权利要求2所述的TOPCon电池的制作方法,其特征在于,在设置所述非晶硅层的过程的环境温度的范围为600摄氏度至615摄氏度,包括端点值。
4.如权利要求3所述的TOPCon电池的制作方法,其特征在于,在设置所述非晶硅层的过程的沉积时间的范围为1500秒至1600秒,包括端点值。
5.如权利要求1所述的TOPCon电池的制作方法,其特征在于,在对所述非晶硅层进行磷掺杂的过程中,磷扩第一步沉积时间的范围为1020秒至1060秒,磷扩第二步沉积时间的范围为130秒至170秒,包括端点值。
6.如权利要求1所述的TOPCon电池的制作方法,其特征在于,所述遂穿氧化层设置过程中的通氧量的范围为32000sccm至38000sccm,包括端点值。
7.如权利要求6所述的TOPCon电池的制作方法,其特征在于,所述遂穿氧化层设置过程中的氧化时间的范围为400秒至450秒,包括端点值。
8.一种TOPCon电池,包括N型基体硅,其特征在于,从所述N型基体硅向迎光面依次包括P型扩散层、正面复合钝化层及正面电极;
从所述N型基体硅向迎光面依次包括遂穿氧化层、N+多晶硅层、背面复合钝化层及背面电极;
所述N+多晶硅层的厚度范围为100纳米至120纳米,包括端点值。
9.如权利要求8所述的TOPCon电池,其特征在于,所述遂穿氧化层的厚度范围为1.5纳米至1.8纳米,包括端点值。
10.如权利要求8所述的TOPCon电池,其特征在于,所述N+多晶硅层的方阻的范围为40欧姆至50欧姆,包括端点值。
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