CN115418713B - Growth method for reducing AlN crystal growth stress - Google Patents
Growth method for reducing AlN crystal growth stress Download PDFInfo
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- CN115418713B CN115418713B CN202210713671.7A CN202210713671A CN115418713B CN 115418713 B CN115418713 B CN 115418713B CN 202210713671 A CN202210713671 A CN 202210713671A CN 115418713 B CN115418713 B CN 115418713B
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- 239000013078 crystal Substances 0.000 title claims abstract description 169
- 238000000034 method Methods 0.000 title claims abstract description 29
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 22
- 239000010937 tungsten Substances 0.000 claims abstract description 22
- 239000002994 raw material Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 6
- 238000004026 adhesive bonding Methods 0.000 claims description 4
- 238000005273 aeration Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 238000000859 sublimation Methods 0.000 claims description 4
- 230000008022 sublimation Effects 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000035882 stress Effects 0.000 abstract description 15
- 230000008646 thermal stress Effects 0.000 abstract description 4
- 239000003292 glue Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 102000029749 Microtubule Human genes 0.000 description 1
- 108091022875 Microtubule Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 210000004688 microtubule Anatomy 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a growth method for reducing the growth stress of an AlN crystal, which is characterized in that an intermediate buffer layer is arranged between a tungsten seed crystal table and an AlN seed crystal to form double seed crystals, and the introduction of an intermediate AlN polycrystalline layer can relieve the thermal stress brought to the AlN seed crystal by a tungsten seed crystal support to a great extent through the buffer of a crystal boundary and a glue layer, so that a large number of cracks caused by the seed crystal in the growth process are reduced, and a high-quality cracking-free AlN single crystal is obtained.
Description
Technical Field
The invention relates to the field of preparation of aluminum nitride single crystals, in particular to a growth method for reducing growth stress of AlN crystals.
Background
AlN crystal is an important wide-bandgap (6.2 eV) semiconductor material, has excellent physical properties such as high thermal conductivity (3.2 W.cm-1K-1), high resistivity, high surface acoustic velocity (5600-6000 m/s) and the like, and is widely applied to lasers, high-power electronic devices, optoelectronic devices and surface acoustic wave devices. Currently, physical Vapor Transport (PVT) is a well-established efficient way to produce large-size aluminum nitride single crystals, and two methods are generally commonly employed in AlN growth using PVT, one being homoepitaxial growth on AlN seed crystals. One is heteroepitaxial growth on SiC seed crystals. Among them, the use of homogeneous growth on an AlN seed crystal is relatively effective for producing high-quality large-size AlN single crystals. But the current use of homoepitaxial growth of AlN crystal size in China reaches a bottleneck period, wherein the main reason is that a large number of cracks are generated in the growth process, and the cracks greatly limit the size and quality of the crystal, so that crack elimination is one of the key problems to be solved in the AlN growth process.
Researchers at home and abroad find that the main reason for crack generation is thermal stress generated in the heating and cooling processes through experiments and simulation calculation, and the source of the thermal stress is the difference of thermal expansion coefficients between a crucible and a seed crystal table (tungsten) and AlN, so that in the temperature change process, the crucible and the seed crystal table generate great tensile stress on the crystal, thereby causing the seed crystal to crack, so that a large number of cracks appear in the crystal which grows later.
Chinese patent document CN207713855U discloses a crucible apparatus for growing aluminum nitride single crystal by physical vapor transport, which, by providing a deflector heating mantle, makes the edge temperature of the seed crystal table higher than the center temperature of the seed crystal table, effectively inhibits the polycrystal formation at the edge of the seed crystal table; the center temperature of the seed crystal table is relatively low, and favorable conditions are provided for the seed crystal to induce AlN single crystal growth; the diversion heating cover enables the gas to be transmitted to the center of the seed crystal table in a concentrated way, so that the formation of polycrystal around the seed crystal is effectively restrained; however, the device causes a large number of cracks to appear in the crystal obtained by growth due to the seed stage.
Therefore, how to reduce the growth stress of AlN crystals in the homoepitaxial growth process is a problem to be solved in the current AlN bulk crystal growth.
Disclosure of Invention
Aiming at the difficult problem that AlN crystal growth stress exists in the homoepitaxial growth process in the prior art and cannot be eliminated, the invention provides a growth method for reducing AlN crystal growth stress. According to the invention, the AlN intermediate buffer layer is arranged between the tungsten seed crystal table and the AlN seed crystal to form double seed crystals, so that the tensile stress of the tungsten seed crystal table on the seed crystals is relieved, the problem that the seed crystals are stretched and cracked due to large thermal expansion coefficient is solved, and a large number of cracks caused by the seed crystals in the growth process are reduced, so that high-quality and cracking-free AlN single crystals are grown.
In order to achieve the above purpose, the invention is realized by the following technical scheme:
a growth method for reducing AlN crystal growth stress, comprising the steps of:
s1, fixing an intermediate buffer layer on a tungsten seed crystal table, and then bonding an AlN seed crystal on the intermediate buffer layer to form a three-layer sandwich structure of the tungsten seed crystal table, the intermediate buffer layer and the AlN seed crystal, so as to obtain a seed crystal table fixed with double seed crystals;
s2, fixing a seed crystal table fixed with double seed crystals on the top of a crucible to serve as a deposition interface for crystal growth;
s3, filling the sintered crystalline AlN raw material below the crucible, and using the crystalline AlN raw material as a raw material sublimation interface of AlN;
s4: sealing the crucible, placing the crucible into a high-temperature furnace, vacuumizing, filling high-purity nitrogen, heating to a preset growth temperature, and vacuumizing to low pressure for AlN crystal growth;
s5: and after the aluminum nitride grows, opening the crucible after the temperature is reduced by aeration, and taking out the growing ingot.
According to a preferred embodiment of the present invention, in step S1, the intermediate buffer layer is an AlN multi-wafer or an AlN single crystal.
According to the present invention, in step S1, the intermediate buffer layer is an AlN multi-wafer having a flat surface, small crystal grains, and a large number of grain boundaries and cracks. This is due to the fact that AlN multi-chip having a large number of grain boundaries and cracks amplifies the buffer effect of the grain boundaries, and a large amount of stress is absorbed by the intermediate buffer layer and the high-temperature glue between layers, resulting in difficulty in transferring the stress to the seed crystal
The choice of the intermediate buffer layer of the present invention is critical, and other intermediate buffer layers (e.g., siC) can develop cracks or micropipe defects.
Most preferably, the intermediate buffer layer is a double-sided leveled, non-polished large-size AlN multi-wafer.
According to the present invention, in step S1, the thickness of the intermediate buffer layer is equal to or greater than the thickness of the AlN seed crystal.
According to a preferred embodiment of the present invention, in step S1, the thickness of the intermediate buffer layer is 0.7-2mm.
According to a preferred embodiment of the present invention, in step S1, the intermediate buffer layer is a stack of AlN multi-chips.
The thickness of the intermediate buffer layer determines the growth of high-quality large-size AlN, is small in thickness, is easy to generate cracks or microtubule defects, and cannot obtain the large-size AlN.
According to the present invention, in step S1, the diameter of the intermediate buffer layer is smaller than the diameter of the seed stage and larger than the diameter of the AlN seed crystal.
According to a preferred embodiment of the present invention, in step S1, the AlN seed crystal is single crystal or polycrystalline.
According to a preferred embodiment of the present invention, in step S1, the AlN seed crystal is a polished large-sized AlN single crystal.
According to the preferred embodiment of the present invention, in step S1, the intermediate buffer layer is fixed on the tungsten seed table by means of high-temperature glue bonding.
According to the preferred embodiment of the present invention, in step S1, alN seed crystal is fixed on the intermediate buffer layer by means of high-temperature glue bonding.
According to the invention, the growth system adopted by the growth method is a graphite crucible tungsten seed crystal table system or a pure metal system.
According to a preferred aspect of the invention, the growth method of the invention is suitable for homoepitaxial growth of AlN.
According to a preferred embodiment of the present invention, in step S3, the sintered crystalline AlN material is obtained as follows:
and placing AlN powder into a crucible, heating to 1800-2200 ℃ in a nitrogen atmosphere, preserving heat for 8-10 hours, and repeatedly sintering to obtain the crystalline AlN raw material.
According to a preferred embodiment of the present invention, in step S4, alN crystal growth conditions are: heating to 2150-2300 ℃, preserving heat, growing for 8-20 hours, and cooling to room temperature in nitrogen atmosphere after the growth is finished.
The invention has the following beneficial technical effects:
1. according to the invention, the seed crystal is subjected to double-layer bonding by adopting a mode of bonding the intermediate layer, so that a double-seed crystal layered structure is formed, and the intermediate layer has a relatively flat surface, relatively small crystal grains and relatively good effect of taking a plurality of crystal grains as the intermediate layer according to experimental results. This can be attributed to the buffer effect of grain boundaries on stress. The double-seed crystal layered structure can greatly slow down the tensile stress of the crucible and the seed crystal table on the seed crystal, reduce a large number of cracks caused by the seed crystal in the growth process, and obtain high-quality non-cracking AlN single crystal.
2. According to the invention, the AlN intermediate buffer layer is arranged between the tungsten seed crystal table and the AlN seed crystal to form double seed crystals, so that the distance between the seed crystals and the tungsten seed crystal table is increased, the thermal stress on the surface of the seed crystals is reduced, the generation of cracks and micropipes of the grown crystals is reduced, the crystal purity is high, and the large-size and high-quality AlN single crystal is obtained.
Drawings
FIG. 1 is a schematic diagram of a dual seed structure. 1 is a seed crystal table, 2 is an intermediate layer, and 3 is a polishing seed crystal for growth;
FIG. 2 is a diagram of a dual seed embodiment;
FIG. 3 is a view of an ingot after a round of growth, the left view being the side, the right view being the front;
FIG. 4 is a schematic illustration of a prior art seed grown ingot;
fig. 5 is a microscopic view of an ingot after one round of growth, the left drawing is a partially enlarged view, and the right drawing is a microscopic view.
Detailed Description
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
In the examples, the AlN multichip was flat, small in crystal grain, and has a large number of grain boundaries and cracks.
The AlN single crystal has a flat surface, small crystal grains and a large number of grain boundaries and cracks.
The AlN seed crystal is an AlN single crystal with the size of 2 after polishing,
example 1
A growth method for reducing AlN crystal growth stress, comprising the steps of:
the method comprises the steps of S1, bonding a double-sided leveling non-polished large-size AlN multi-wafer on a tungsten seed crystal table at high temperature, and bonding AlN seed crystals on the AlN multi-wafer to form a three-layer sandwich structure of the tungsten seed crystal table, the AlN multi-wafer and the AlN seed crystals, so as to obtain a seed crystal table fixed with double seed crystals; the AlN multi-wafer is formed by stacking a plurality of layers of AlN multi-wafers, the thickness of the AlN multi-wafer is the same as that of the AlN seed crystal, and the diameter of the AlN multi-wafer is smaller than that of the seed crystal table and larger than that of the AlN seed crystal;
s2, fixing a seed crystal table fixed with double seed crystals on the top of a crucible to serve as a deposition interface for crystal growth;
s3, filling the sintered crystalline AlN raw material below the crucible, and using the crystalline AlN raw material as a raw material sublimation interface of AlN; the sintered crystalline AlN raw material is obtained by the following method:
and placing AlN powder into a crucible, heating to 1800-2200 ℃ in a nitrogen atmosphere, preserving heat for 8-10 hours, and repeatedly sintering to obtain the crystalline AlN raw material.
S4: sealing the crucible, placing the crucible into a high-temperature furnace, vacuumizing, filling high-purity nitrogen, heating to a preset growth temperature, and vacuumizing to low pressure for AlN crystal growth;
s5: and after the aluminum nitride grows, opening the crucible after the temperature is reduced by aeration, and taking out the growing ingot.
Experimental example 1
By arranging an AlN multi-wafer between a tungsten seed crystal table and an AlN seed crystal to form a double-seed crystal mode to grow AlN, wherein the position relation of the tungsten seed crystal table, the AlN multi-wafer and the AlN seed crystal is shown in a figure 1, a physical diagram is shown in a figure 2, the thickness of the AlN multi-wafer is 0.7mm, the thickness of the seed crystal is 0.7mm, an ingot after one round of growth is shown in a figure 3, compared with an ingot (figure 4) grown by the previous seed crystal, crystal grains on the surface of the double-seed crystal are relatively larger, crystal boundaries are relatively fewer, the number of cracks is obviously reduced, and through microscopic observation, the cracks basically have no obvious microscopic manifestation as shown in a figure 5, and the number of the cracks can be reduced by 1-2 orders of magnitude by roughly calculating the method, so that the double-seed crystal effect is obvious.
Example 2
A growth method for reducing AlN crystal growth stress, comprising the steps of:
s1, bonding AlN single crystals with flat surfaces, small crystal grains and a large number of crystal boundaries and cracks on a tungsten seed crystal table at high temperature, and bonding AlN seed crystals on the AlN single crystals to form a three-layer sandwich structure of the tungsten seed crystal table, the AlN single crystals and the AlN seed crystals, so as to obtain a seed crystal table fixed with double seed crystals; the thickness of the AlN single crystal is larger than that of the AlN seed crystal, the diameter of the AlN single crystal is smaller than that of the seed crystal table, and the AlN single crystal is larger than that of the AlN seed crystal;
s2, fixing a seed crystal table fixed with double seed crystals on the top of a crucible to serve as a deposition interface for crystal growth;
s3, filling the sintered crystalline AlN raw material below the crucible, and using the crystalline AlN raw material as a raw material sublimation interface of AlN; the sintered crystalline AlN raw material is obtained by the following method:
and placing AlN powder into a crucible, heating to 1800-2200 ℃ in a nitrogen atmosphere, preserving heat for 8-10 hours, and repeatedly sintering to obtain the crystalline AlN raw material.
S4: sealing the crucible, placing the crucible into a high-temperature furnace, vacuumizing, filling high-purity nitrogen, heating to a preset growth temperature, and vacuumizing to low pressure for AlN crystal growth;
s5: and after the aluminum nitride grows, opening the crucible after the temperature is reduced by aeration, and taking out the growing ingot.
Comparative example 1
The AlN crystal growth described in example 1 was different in that:
step S1, bonding SiC on a tungsten seed crystal table at high temperature, and bonding AlN seed crystal on the SiC to form a three-layer sandwich structure of the tungsten seed crystal table, the SiC and the AlN seed crystal, otherwise, the method is carried out according to the embodiment 1.
As can be seen from comparison of the ingot after one round of growth with the ingot grown by the previous seed crystal, the crystal boundary is more, the number of cracks is obviously increased, and the selection of the intermediate buffer layer is critical to the reduction of cracks or micropipe defects.
The above description is only for the purpose of illustrating the invention, and it should be understood that the invention is not limited to the above embodiments, but various modifications consistent with the idea of the invention are within the scope of the invention.
Claims (4)
1. A growth method for reducing AlN crystal growth stress, comprising the steps of:
s1, fixing an intermediate buffer layer on a tungsten seed crystal table, and then bonding an AlN seed crystal on the intermediate buffer layer to form a three-layer sandwich structure of the tungsten seed crystal table, the intermediate buffer layer and the AlN seed crystal, so as to obtain a seed crystal table fixed with double seed crystals; the middle buffer layer is a double-sided leveling and non-polishing large-size AlN multi-wafer; the thickness of the intermediate buffer layer is greater than or equal to the thickness of the AlN seed crystal, the thickness of the intermediate buffer layer is 0.7-2mm, the intermediate buffer layer is formed by stacking a plurality of AlN polycrystalline layers, the diameter of the intermediate buffer layer is smaller than the diameter of the seed crystal table and is larger than the diameter of the AlN seed crystal;
s2, fixing a seed crystal table fixed with double seed crystals on the top of a crucible to serve as a deposition interface for crystal growth;
s3, filling the sintered crystalline AlN raw material below the crucible, and using the crystalline AlN raw material as a raw material sublimation interface of AlN;
s4: sealing the crucible, placing the crucible into a high-temperature furnace, vacuumizing, filling high-purity nitrogen, heating to a preset growth temperature, and vacuumizing to low pressure for AlN crystal growth;
s5: and after the aluminum nitride grows, opening the crucible after the temperature is reduced by aeration, and taking out the growing ingot.
2. A growth method according to claim 1, wherein,
in the step S1, alN seed crystal is monocrystalline or polycrystalline, and the AlN seed crystal is large-size AlN monocrystalline after single-sided polishing; the middle buffer layer is a double-sided leveling non-polished AlN multi-wafer and is fixed on the tungsten seed crystal table in a high-temperature glue bonding mode; the AlN seed crystal is fixed on the middle buffer layer by adopting a high-temperature glue bonding mode.
3. A growth method according to claim 1, wherein,
in step S3, the sintered crystalline AlN material is obtained as follows:
and placing AlN powder into a crucible, heating to 1800-2200 ℃ in a nitrogen atmosphere, preserving heat for 8-10 hours, and repeatedly sintering to obtain the crystalline AlN raw material.
4. A growth method according to claim 1, wherein,
in step S4, alN crystal growth conditions are: heating to 2150-2300 deg.c, maintaining the temperature for 8-20 hr, and cooling to room temperature in nitrogen atmosphere after the growth.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050104454A (en) * | 2004-04-28 | 2005-11-03 | 삼성전기주식회사 | Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method |
| CN104371560A (en) * | 2014-10-23 | 2015-02-25 | 中国电子科技集团公司第四十六研究所 | Aluminum-base high-temperature adhesive for AlN seed crystal bonding and preparation method thereof |
| CN111472045A (en) * | 2020-04-30 | 2020-07-31 | 北京大学 | Aluminum nitride single crystal preparation method based on large-size seed crystals |
| CN113957536A (en) * | 2021-09-23 | 2022-01-21 | 奥趋光电技术(杭州)有限公司 | Composite structure AlN seed crystal for PVT and preparation and application thereof |
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- 2022-06-22 CN CN202210713671.7A patent/CN115418713B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050104454A (en) * | 2004-04-28 | 2005-11-03 | 삼성전기주식회사 | Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method |
| CN104371560A (en) * | 2014-10-23 | 2015-02-25 | 中国电子科技集团公司第四十六研究所 | Aluminum-base high-temperature adhesive for AlN seed crystal bonding and preparation method thereof |
| CN111472045A (en) * | 2020-04-30 | 2020-07-31 | 北京大学 | Aluminum nitride single crystal preparation method based on large-size seed crystals |
| CN113957536A (en) * | 2021-09-23 | 2022-01-21 | 奥趋光电技术(杭州)有限公司 | Composite structure AlN seed crystal for PVT and preparation and application thereof |
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