CN115412052A - Acoustic surface wave resonator - Google Patents
Acoustic surface wave resonator Download PDFInfo
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- CN115412052A CN115412052A CN202211034736.1A CN202211034736A CN115412052A CN 115412052 A CN115412052 A CN 115412052A CN 202211034736 A CN202211034736 A CN 202211034736A CN 115412052 A CN115412052 A CN 115412052A
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- electrode array
- interdigital electrode
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- acoustic wave
- surface acoustic
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a surface acoustic wave resonator, comprising: the piezoelectric film is arranged on the supporting substrate in a stacked mode from bottom to top; two sides of the electrode structure are respectively provided with a reflecting grid array; the electrode structure comprises an input area interdigital electrode array, a switching area interdigital electrode array and an output area interdigital electrode array; the input area interdigital electrode array, the switching area interdigital electrode array and the output area interdigital electrode array are connected in parallel and in series; the input end of the input area interdigital electrode array is the input end of the surface acoustic wave resonator, and the output end of the input area interdigital electrode array is connected with the input end of the switching area interdigital electrode array; the output end of the switching area interdigital electrode array is connected with the input end of the output area interdigital electrode array, and the output end of the output area interdigital electrode array is the output end of the surface acoustic wave resonator. The invention can effectively reduce the static capacitance of the surface acoustic wave resonator while ensuring the performance of the surface acoustic wave resonator, and meets the design requirement.
Description
Technical Field
The invention relates to the technical field of microelectronic devices, in particular to a surface acoustic wave resonator.
Background
The static capacitance of the surface acoustic wave resonator is proportional to the number of pairs of interdigital electrodes IDT and the aperture width. The surface acoustic wave filter is formed by arranging and combining surface acoustic wave resonators according to a specific topology, in order to meet parameter requirements of the filter, static capacitors C0 of the resonators need to be matched with one another, and in a partial topology structure, the resonators are required to have small static capacitors.
Conventional surface acoustic wave resonators typically employ a reduction in IDT logarithm and aperture width to achieve a small static capacitance, but this reduces the quality factor of the surface acoustic wave resonator. The existing surface acoustic wave resonator generally adopts two interdigital transducers to set up series connection side by side to form an electrode structure to the impedance that increases the resonator realizes the reduction of static electric capacity, but two interdigital transducers set up side by side, can produce new clutter because of the acoustic coupling, lead to current surface acoustic wave resonator performance relatively poor.
Disclosure of Invention
The invention provides a surface acoustic wave resonator, which aims to solve the technical problem that the existing surface acoustic wave resonator is poor in performance because two interdigital transducers are arranged side by side to form an electrode structure and new clutter is generated due to acoustic wave coupling.
An embodiment of the present invention provides a surface acoustic wave resonator including:
the piezoelectric film is arranged on the supporting substrate in a stacked mode from bottom to top;
two sides of the electrode structure are respectively provided with a reflecting grid array;
the electrode structure comprises an input area interdigital electrode array, a switching area interdigital electrode array and an output area interdigital electrode array;
the input area interdigital electrode array, the switching area interdigital electrode array and the output area interdigital electrode array are connected in parallel and in series;
the input end of the input area interdigital electrode array is the input end of the surface acoustic wave resonator, and the output end of the input area interdigital electrode array is connected with the input end of the switching area interdigital electrode array; the output end of the switching area interdigital electrode array is connected with the input end of the output area interdigital electrode array, and the output end of the output area interdigital electrode array is the output end of the surface acoustic wave resonator.
Further, the aperture width and the air gap width of the input area interdigital electrode array, the switching area interdigital electrode array and the output area interdigital electrode array are the same.
Furthermore, the number of pairs of the input area interdigital electrode array, the switching area interdigital electrode array and the output area interdigital electrode array can be adjusted according to requirements.
Further, the period of the switching-region interdigital electrode array is preset to be within a range of Lambda (1 ± 0.1%).
Further, the preset range of the distance between the input-region interdigital electrode array, the switching-region interdigital electrode array and the output-region interdigital electrode array, and the distance between the reflection gate array and the electrode structure is (0,lambda).
Further, the material of the piezoelectric film is one of lithium niobate and lithium tantalate.
Further, the material of the support substrate is one of single crystal silicon carbide, sapphire or silicon.
Further, the material of the electrode structure includes at least one of aluminum, copper, gold, platinum, and silver.
According to the embodiment of the invention, the corresponding input area interdigital electrode array, the corresponding switching area interdigital electrode array and the corresponding output area interdigital electrode array are respectively arranged according to the input area, the switching area interdigital electrode array and the corresponding output area interdigital electrode array of the electrode structure, and the interdigital electrode arrays in the three areas are connected in parallel and in series, so that the interdigital electrode arrays in the three areas can be equivalent to three mBVD models in series connection, when the number of pairs of the interdigital electrode arrays in the three areas is equal, the static capacitance of the surface acoustic wave resonator can be effectively reduced, the number of pairs in each interdigital electrode array can be ensured to be enough, and the performance of the surface acoustic wave resonator can be effectively improved while the surface acoustic wave resonator meets the requirement of small static capacitance.
Furthermore, in the embodiment of the present invention, the coupling noise generated by the surface acoustic wave resonator can be cancelled by adjusting the period of the switching region interdigital electrode array, the distances among the input region interdigital electrode array, the switching region interdigital electrode array and the output region interdigital electrode array, and the distance between the reflection gate array and the electrode structure, so as to further improve the performance of the surface acoustic wave resonator.
Drawings
Fig. 1 is a schematic diagram of an electrode structure of a surface acoustic wave resonator of the present invention;
fig. 2 is a schematic diagram of admittance response of a conventional surface acoustic wave resonator provided by an embodiment of the present invention;
fig. 3 is a graph comparing the admittance responses of the SH0 mode of the saw resonator according to the embodiment of the present invention and the conventional resonator under the same area condition.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it should be noted that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, a fixed connection, a detachable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in this application will be understood to be a specific case for those of ordinary skill in the art.
Referring to fig. 1, an embodiment of the present invention provides a surface acoustic wave resonator, including:
the piezoelectric film is arranged on the supporting substrate in a stacked mode from bottom to top;
two sides of the electrode structure are respectively provided with a reflecting grid array 104;
the two reflective grating arrays 104 are disposed in parallel with the electrode structure, and a certain distance is maintained between each reflective grating array 104 and the electrode structure, and the distance can be adjusted according to actual needs, and in a specific embodiment, the distance is in a range of (0, lambda), where Lambda is (1 ± 0.1%).
The electrode structure comprises an input area interdigital electrode array 101, a switching area interdigital electrode array 102 and an output area interdigital electrode array 103;
the electrode structure comprises three areas, namely an input area, a switching area and an output area, wherein each area can be provided with a plurality of interdigital electrode arrays, and in the embodiment of the invention, each area is provided with one interdigital electrode array, namely an input area interdigital electrode array 101, a switching area interdigital electrode array 102 and an output area interdigital electrode array 103.
The input region interdigital electrode array 101, the switching region interdigital electrode array 102 and the output region interdigital electrode array 103 are connected in parallel and in series;
the input end of the input area interdigital electrode array 101 is the input end 107 of the surface acoustic wave resonator, and the output end of the input area interdigital electrode array 101 is connected with the input end of the switching area interdigital electrode array 102; the output end of the switching region interdigital electrode array 102 is connected with the input end of the output region interdigital electrode array 103, and the output end of the output region interdigital electrode array 103 is the output end 108 of the surface acoustic wave resonator;
in this embodiment of the present invention, the electrode structure may be equivalent to three mbbd models connected in series in the electrical model, and assuming that the logarithm of the input area interdigital electrode array 101, the logarithm of the switching area interdigital electrode array 102, and the logarithm of the output area interdigital electrode array 103 are N1, N2, and N3, respectively, the equivalent static capacitance of a single interdigital electrode array pair is C0, and the static capacitance C0 is proportional to the logarithm of the interdigital electrode array, then the equivalent static capacitances of the input area interdigital electrode array 101, the switching area interdigital electrode array 102, and the output area interdigital electrode array 103 are N1 × C0, N2 × C0, and N3 × C0, respectively, that is, the total static capacitance of the resonator in this embodiment of the present invention is C = 1/(1/N1 +1/N2+ 1/N3) × C0.
When the number of pairs of interdigital electrode arrays in three areas is equal, namely N1= N2= N3=1/3 × N, c =1/9 × N × c0, under the same area, the static capacitance of the surface acoustic wave resonator of the embodiment of the present invention is 1/9 of the static capacitance of the conventional surface acoustic wave resonator, so that the static capacitance of the surface acoustic wave resonator can be effectively reduced, and sufficient number of pairs in each interdigital electrode array can be ensured, newly generated coupling noise can be effectively suppressed, and further, the performance of the surface acoustic wave resonator can be effectively improved.
In one embodiment, the aperture width 109 and the air gap width 110 of the input area interdigital electrode array 101, the switching area interdigital electrode array 102 and the output area interdigital electrode array 103 are the same.
In the embodiment of the present invention, the aperture width and the air gap width of the interdigital electrode array of the three regions are the same in size, including the aperture width 109 and the air gap width 110.
In one embodiment, the number of pairs of the input area interdigital electrode array 101, the switching area interdigital electrode array 102 and the output area interdigital electrode array 103 can be adjusted as required.
In the embodiment of the invention, the number of pairs of the interdigital electrode arrays in the three regions can be freely adjusted according to actual needs, and the static capacitance of the surface acoustic wave resonator can be adjusted by adjusting the number of pairs of the interdigital electrodes in the three regions, so that the requirement of the surface acoustic wave resonator on small static capacitance can be met, and the performance of the surface acoustic wave resonator can be ensured.
In one embodiment, the period of the switching-region interdigital electrode array 102 is preset in a range of Lambda (1 ± 0.1%).
In one embodiment, the distance 105 between the input-region interdigital electrode array 101, the switching-region interdigital electrode array 102, and the output-region interdigital electrode array 103, and the distance 106 between the reflection gate array 104 and the electrode structure are within a preset range of (0,lambda ].
In the embodiment of the present invention, the coupling noise generated by the surface acoustic wave resonator can be cancelled by adjusting the period of the switching-region interdigital electrode array 102, the distance 105 between the input-region interdigital electrode array 101, the switching-region interdigital electrode array 102, and the output-region interdigital electrode array 103, and the distance 106 between the reflection gate array 104 and the electrode structure, so that the performance of the surface acoustic wave resonator can be effectively improved.
In one embodiment, the material of the piezoelectric film is one of lithium niobate and lithium tantalate.
In one embodiment, the material of the support substrate is one of single crystal silicon carbide, sapphire, or silicon.
Optionally, the method for manufacturing the surface acoustic wave filter according to the embodiment of the present invention includes:
preparing a heterogeneous integrated support substrate using ion beam lift-off and bonding techniques, comprising: ion implantation, bonding, stripping and polishing treatment; fabricating an electrode structure on a support substrate using a lift-off process, comprising: spin coating, photolithography, deposition and lift-off processing.
In one embodiment, the material of the electrode structure comprises at least one of aluminum, copper, gold, platinum and silver.
Referring to fig. 2-3, fig. 2 is a schematic diagram of admittance response when the piezoelectric film is lithium niobate (X-cut) with a thickness of 200 nm, the supporting substrate is silicon carbide, the electrode structure is aluminum with a thickness of 100 nm, and the total interdigital electrode pair of the conventional resonator is 40, and fig. 3 is a comparison diagram of admittance response of the SHO mode of the surface acoustic wave resonator according to the embodiment of the present invention and the conventional resonator under the same area condition.
The embodiment of the invention has the following beneficial effects:
according to the embodiment of the invention, the corresponding input area interdigital electrode array 101, the switching area interdigital electrode array 102 and the output area interdigital electrode array 103 are respectively arranged according to the input area, the switching area interdigital electrode array 102 and the output area interdigital electrode array 103 of the electrode structure, and the interdigital electrode arrays of the three areas are connected in parallel and in series, so that the interdigital electrode arrays of the three areas can be equivalent to three mBVD models in series connection, when the number of pairs of the interdigital electrode arrays of the three areas is equal, the static capacitance of the surface acoustic wave resonator can be effectively reduced, the number of pairs in each interdigital electrode array can be ensured to be enough, and the performance of the surface acoustic wave resonator can be effectively improved while the surface acoustic wave resonator meets the requirement of small static capacitance.
Furthermore, in the embodiment of the present invention, the period of the switching-region interdigital electrode array 102, the distances between the input-region interdigital electrode array 101, the switching-region interdigital electrode array 102, and the output-region interdigital electrode array 103, and the distance between the reflection gate array 104 and the electrode structure may be adjusted to cancel the coupling noise generated by the surface acoustic wave resonator, so as to further improve the performance of the surface acoustic wave resonator.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (8)
1. A surface acoustic wave resonator, comprising:
the piezoelectric film is arranged on the supporting substrate in a stacked mode from bottom to top;
two sides of the electrode structure are respectively provided with a reflecting grating array;
the electrode structure comprises an input area interdigital electrode array, a switching area interdigital electrode array and an output area interdigital electrode array;
the input area interdigital electrode array, the switching area interdigital electrode array and the output area interdigital electrode array are connected in parallel and in series;
the input end of the input area interdigital electrode array is the input end of the surface acoustic wave resonator, and the output end of the input area interdigital electrode array is connected with the input end of the switching area interdigital electrode array; the output end of the switching area interdigital electrode array is connected with the input end of the output area interdigital electrode array, and the output end of the output area interdigital electrode array is the output end of the surface acoustic wave resonator.
2. A surface acoustic wave resonator as set forth in claim 1, wherein the aperture width and the air gap width of said input area interdigital electrode array, said switching area interdigital electrode array, and said output area interdigital electrode array are the same.
3. A surface acoustic wave resonator as set forth in claim 1, wherein the number of pairs of said input area interdigital electrode array, said switching area interdigital electrode array, and said output area interdigital electrode array can be adjusted as desired.
4. A surface acoustic wave resonator as set forth in claim 1, wherein said switching-region interdigital electrode array has a period preset in the range of Lambda (1 ± 0.1%).
5. A surface acoustic wave resonator as set forth in claim 1, wherein a distance between said input-area interdigital electrode array, switching-area interdigital electrode array and output-area interdigital electrode array, and a distance between said reflection gate array and electrode structure are within a predetermined range of (0,lambda ].
6. A surface acoustic wave resonator as set forth in claim 1, wherein a material of said piezoelectric film is one of lithium niobate and lithium tantalate.
7. A surface acoustic wave resonator as set forth in claim 1, wherein the material of said support substrate is one of single crystal silicon carbide, sapphire, or silicon.
8. A surface acoustic wave resonator as set forth in claim 1, wherein a material of the electrode structure includes at least one of aluminum, copper, gold, platinum, and silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211034736.1A CN115412052A (en) | 2022-08-26 | 2022-08-26 | Acoustic surface wave resonator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211034736.1A CN115412052A (en) | 2022-08-26 | 2022-08-26 | Acoustic surface wave resonator |
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| CN115412052A true CN115412052A (en) | 2022-11-29 |
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| CN202211034736.1A Pending CN115412052A (en) | 2022-08-26 | 2022-08-26 | Acoustic surface wave resonator |
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