CN115411153A - Method for improving conversion efficiency of HIT heterojunction solar cell - Google Patents
Method for improving conversion efficiency of HIT heterojunction solar cell Download PDFInfo
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- CN115411153A CN115411153A CN202110576045.3A CN202110576045A CN115411153A CN 115411153 A CN115411153 A CN 115411153A CN 202110576045 A CN202110576045 A CN 202110576045A CN 115411153 A CN115411153 A CN 115411153A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000126 substance Substances 0.000 claims abstract description 6
- 230000015556 catabolic process Effects 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 230000007547 defect Effects 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000003034 coal gas Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003209 petroleum derivative Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 230000003442 weekly effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a method for improving the conversion efficiency of an HIT heterojunction solar cell, which comprises the following steps: electrically connecting the HIT heterojunction solar cell with a direct-current power supply, and controlling the voltage of the direct-current power supply to be smaller than the breakdown voltage of the HIT heterojunction solar cell so as to heat a bypass resistor in the HIT heterojunction solar cell and blow the bypass resistor; irradiating the HIT heterojunction solar cell by strong light to enable unstable dangling bonds in the HIT heterojunction solar cell to be recombined into stable chemical bonds; and disconnecting the electrical connection between the HIT heterojunction solar cell and the direct-current power supply, and removing the irradiation of strong light on the HIT heterojunction solar cell to obtain the HIT heterojunction solar cell with improved cell conversion efficiency. According to the method, the direct-current power supply is connected and the direct-current power supply is irradiated by strong light to the conventional HIT heterojunction solar cell, so that the bypass resistance and the unstable dangling bond are eliminated, and the conversion efficiency of the HIT heterojunction solar cell is greatly improved.
Description
Technical Field
The invention relates to a method for improving the conversion efficiency of a solar cell, in particular to a method for improving the conversion efficiency of an HIT heterojunction solar cell.
Background
The energy is the power for the development of human socioeconomic development and the basis for social development. In this century, people have great challenges to realize economic and social sustainable development, and how to carry out sustainable development under the severe situations of limited resources and environmental protection has become a global hot issue. All human activities can not leave energy sources, and social development depends on energy sources. The shortage of conventional energy sources such as coal, petroleum and natural gas can support the global development time for a short time, and more importantly, the development and utilization of fossil energy bring about the problems such as land resource destruction, environmental pollution, greenhouse effect and the like, thereby causing unrecoverable damage to the human living environment. The solar energy is clean, pollution-free and inexhaustible, can be used freely without transportation, and meets the development requirements of new energy in the future.
At present, the predominant solar cell is still a crystalline silicon solar cell. Although the conversion efficiency of the crystalline silicon solar cell has reached about 25%, the cost is too high because the crystalline silicon solar cell needs to be subjected to a high temperature diffusion process to form a PN junction and also needs many complicated processes to obtain high conversion efficiency. The use of amorphous silicon/monocrystalline silicon heterojunctions is a good choice in order to reduce costs while maintaining high conversion efficiency. The HIT (Heterojunction with intrinsic Heterojunction) Heterojunction solar cell adopts an amorphous silicon film/monocrystalline silicon substrate Heterojunction structure, integrates the advantages of monocrystalline silicon and amorphous silicon solar cells, and is an optimal design for fully playing the respective advantages.
The HIT heterojunction solar cell has the advantages of high efficiency and high stability of the crystalline silicon solar cell, and meanwhile, because a high-temperature process does not exist in the preparation process, the energy consumption is low, and the process is relatively simple, the HIT heterojunction solar cell also has better temperature characteristics than a monocrystalline silicon cell, and can also have higher output at high temperature. Therefore, the HIT heterojunction solar cell has attracted attention in recent years as a solar cell having high efficiency and low cost, and has become one of the development directions of the solar cell. The efficiency of the HIT heterojunction solar cell industrialized by the Sanyo company reaches 21 percent at present, and the laboratory efficiency exceeds 23 percent. Companies such as samsung, weekly (Jusung) have also achieved efficiencies of greater than 21%.
The HIT heterojunction solar cell is of a stacked structure consisting of TCO-P-I-silicon wafer-I-N-TCO layers. In production practice, engineers have found that sunlight during hot noon can break unstable dangling bonds in the cell structure and recombine them into more stable bonds, thereby reducing defect density and improving the conversion efficiency of the HIT heterojunction solar cell. However, the method for improving the conversion efficiency of the HIT heterojunction solar cell is suitable for only hot noon on one hand by receiving images of natural environment, and has the defects of low practical industrialization value and significance and poor practicability; on the other hand, the method for improving the conversion efficiency of the HIT heterojunction solar cell cannot eliminate efficiency loss caused by leakage current rise due to micropore defects in a silicon wafer, for example, in the vapor deposition process of a P-I layer or an I-N layer, a thin film layer has small holes, so that TCO is directly contacted with the silicon wafer, the leakage current is increased, and the conversion efficiency of the cell is reduced (the principle equivalent circuit is that a group of leakage resistors (or bypass resistors) are connected in parallel beside the cell, the leakage resistors generate power consumption, on one hand, the cell is heated to reduce the conversion efficiency, and on the other hand, part of output power is consumed to reduce the conversion efficiency). From the above, the existing HIT heterojunction solar cell structure has the following two defects that the conversion efficiency is reduced: (1) The battery structure generates a bypass resistor due to the film deposition defect and the silicon wafer production defect, and the conversion efficiency of the battery structure is reduced due to the existence of the bypass resistor seriously; (2) The presence of unstable dangling bonds results in a reduction in the conversion efficiency of the cell structure
Therefore, a method for improving the conversion efficiency of the HIT heterojunction solar cell is needed to solve the above technical problem.
Disclosure of Invention
The invention aims to provide a method capable of improving the conversion efficiency of an HIT heterojunction solar cell; according to the method, the direct-current power supply is connected and the direct-current power supply is irradiated by strong light to the conventional HIT heterojunction solar cell, so that the bypass resistance and the unstable dangling bond are eliminated, and the conversion efficiency of the HIT heterojunction solar cell is greatly improved.
In order to achieve the above object, the present invention provides a method for improving the conversion efficiency of an HIT heterojunction solar cell, which comprises the following steps: electrically connecting the HIT heterojunction solar cell with a direct-current power supply, and controlling the voltage of the direct-current power supply to be smaller than the breakdown voltage of the HIT heterojunction solar cell so as to heat a bypass resistor in the HIT heterojunction solar cell and blow the bypass resistor; irradiating the HIT heterojunction solar cell by strong light to enable unstable dangling bonds in the HIT heterojunction solar cell to be recombined into stable chemical bonds; and disconnecting the electrical connection between the HIT heterojunction solar cell and the direct-current power supply, and removing the irradiation of the strong light on the HIT heterojunction solar cell to obtain the HIT heterojunction solar cell with improved cell conversion efficiency.
Compared with the prior art, the HIT heterojunction solar cell is electrically connected with the direct-current power supply, so that a bypass resistor generated by the defect of a silicon wafer in the HIT heterojunction solar cell is heated and burnt out, the defect bypass resistor in the HIT heterojunction solar cell is eliminated, and the conversion efficiency of the HIT heterojunction solar cell is improved; meanwhile, the conversion efficiency of the HIT heterojunction solar cell is electrified to generate heat by itself and the heat of the bypass resistor can obviously raise the temperature of the whole HIT heterojunction solar cell, and the HIT heterojunction solar cell is matched with external strong light to irradiate, so that unstable hanging bonds in the HIT heterojunction solar cell are recombined into stable chemical bonds, and the conversion efficiency of the HIT heterojunction solar cell is further improved. Therefore, the conversion efficiency of the HIT heterojunction solar cell is improved by overlapping the dual properties of the invention, and the HIT heterojunction solar cell has stronger practicability and is suitable for wide popularization and application.
Preferably, the method for improving the conversion efficiency of the HIT heterojunction solar cell comprises the steps of electrically connecting the HIT heterojunction solar cell with a direct current power supply and controlling the temperature to be between 100 and 150 ℃.
Drawings
Fig. 1 is an equivalent circuit diagram of a conventional HIT heterojunction solar cell.
Fig. 2 is a schematic diagram of a conventional HIT heterojunction solar cell that is electrically connected to a dc power source and is subjected to a high-intensity light irradiation process according to the method of the present invention.
Fig. 3 is an equivalent circuit diagram of fig. 2 after processing in accordance with the method of the present invention.
Detailed Description
Embodiments of the present invention will now be described with reference to the drawings, wherein like element numerals represent like elements.
The invention discloses a method for improving the conversion efficiency of an HIT heterojunction solar cell, which comprises the following steps: electrically connecting the HIT heterojunction solar cell with a direct-current power supply, and controlling the voltage of the direct-current power supply to be smaller than the breakdown voltage of the HIT heterojunction solar cell so as to heat a bypass resistor in the HIT heterojunction solar cell and blow the bypass resistor; irradiating the HIT heterojunction solar cell by strong light to enable unstable dangling bonds in the HIT heterojunction solar cell to be recombined into stable chemical bonds; and disconnecting the electrical connection between the HIT heterojunction solar cell and the direct-current power supply, and removing the irradiation of strong light on the HIT heterojunction solar cell to obtain the HIT heterojunction solar cell with improved cell conversion efficiency. According to the HIT heterojunction solar cell, the direct-current power supply is electrically connected with the conventional HIT heterojunction solar cell, so that a bypass resistor generated due to the defect of a silicon wafer in the HIT heterojunction solar cell is heated and burnt out, the defect bypass resistor in the HIT heterojunction solar cell is eliminated, and the conversion efficiency of the HIT heterojunction solar cell is improved; meanwhile, the conversion efficiency of the HIT heterojunction solar cell is electrified to generate heat by itself and the heat of the bypass resistor can obviously raise the temperature of the whole HIT heterojunction solar cell, and the HIT heterojunction solar cell is matched with external strong light to irradiate, so that unstable suspension bonds in the HIT heterojunction solar cell are recombined into stable chemical bonds, and the conversion efficiency of the HIT heterojunction solar cell is further improved. Therefore, the conversion efficiency of the HIT heterojunction solar cell is improved by overlapping the dual properties, and the HIT heterojunction solar cell has strong practicability and is suitable for wide popularization and application.
Specifically, as shown in fig. 1, the existing HIT heterojunction solar cell includes a bypass resistor 100 and an HIT heterojunction solar cell self-resistor 200, the bypass resistor 100 and the HIT heterojunction solar cell self-resistor 200 are connected in parallel, and the bypass resistor 100 generates power consumption due to the leakage resistance of the leakage effect formed by the bypass resistor 100, so that the HIT heterojunction solar cell is heated to reduce conversion efficiency, and a part of output power is consumed to reduce conversion efficiency. Therefore, as shown in fig. 2, the present invention switches in a direct current power supply 2 capable of blowing the bypass resistor 100 and irradiates the HIT heterojunction solar cell 1 with strong light 3, thereby eliminating the bypass resistor 100 and unstable dangling bonds, greatly improving the conversion efficiency of the HIT heterojunction solar cell 1, and further forming an equivalent circuit shown in fig. 3, which improves the conversion efficiency of the HIT heterojunction solar cell, wherein the HIT heterojunction solar cell with improved conversion efficiency only has a self-resistor 200. More specifically, as shown in fig. 2, the cathode of the dc power supply 2 is electrically connected to the cathode of the HIT heterojunction solar cell 1 through a wire connecting contact pin 4, the anode of the dc power supply 2 is electrically connected to the anode of the HIT heterojunction solar cell 1 through a wire connecting contact pin 5, and an arrow i indicates a current direction of the dc power supply 2.
Preferably, in the method for improving the conversion efficiency of the HIT heterojunction solar cell, the HIT heterojunction solar cell is electrically connected with the direct-current power supply, and the temperature is controlled to be between 100 and 150 ℃; the structure of the HIT heterojunction solar cell is not damaged in the temperature range, and the conversion efficiency of the HIT heterojunction solar cell can be optimized.
It should be noted that the HIT heterojunction solar cell according to the present invention is designed in the prior art, and the defects that cause low conversion rate are also known in the prior art, and the structural design and the defects that cause the conversion rate are not described in detail herein.
The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the scope of the present invention, therefore, the present invention is not limited by the appended claims.
Claims (2)
1. A method for improving the conversion efficiency of an HIT heterojunction solar cell is characterized by comprising the following steps: electrically connecting the HIT heterojunction solar cell with a direct-current power supply, and controlling the voltage of the direct-current power supply to be smaller than the breakdown voltage of the HIT heterojunction solar cell so as to enable a bypass resistor in the HIT heterojunction solar cell to be heated and blown; irradiating the HIT heterojunction solar cell by strong light to enable unstable dangling bonds in the HIT heterojunction solar cell to be recombined into stable chemical bonds; and disconnecting the electrical connection between the HIT heterojunction solar cell and the direct-current power supply, and removing the irradiation of the strong light on the HIT heterojunction solar cell to obtain the HIT heterojunction solar cell with improved cell conversion efficiency.
2. The method for improving the conversion efficiency of the HIT heterojunction solar cell as claimed in claim 1, wherein the temperature of the HIT heterojunction solar cell is controlled to be between 100 ℃ and 150 ℃ after the HIT heterojunction solar cell is electrically connected with the direct current power supply.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110576045.3A CN115411153A (en) | 2021-05-26 | 2021-05-26 | Method for improving conversion efficiency of HIT heterojunction solar cell |
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| CN202110576045.3A CN115411153A (en) | 2021-05-26 | 2021-05-26 | Method for improving conversion efficiency of HIT heterojunction solar cell |
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| CN115411153A true CN115411153A (en) | 2022-11-29 |
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| CN202110576045.3A Pending CN115411153A (en) | 2021-05-26 | 2021-05-26 | Method for improving conversion efficiency of HIT heterojunction solar cell |
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- 2021-05-26 CN CN202110576045.3A patent/CN115411153A/en active Pending
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