CN115410934A - Interconnection process of micron In and nano Cu @ Ag core-shell mixed material - Google Patents
Interconnection process of micron In and nano Cu @ Ag core-shell mixed material Download PDFInfo
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- CN115410934A CN115410934A CN202210853994.6A CN202210853994A CN115410934A CN 115410934 A CN115410934 A CN 115410934A CN 202210853994 A CN202210853994 A CN 202210853994A CN 115410934 A CN115410934 A CN 115410934A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29109—Indium [In] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29439—Silver [Ag] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29447—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
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- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention discloses an interconnection process of a micron In and nano Cu @ Ag core-shell mixed material, which comprises the following steps: the method comprises the following steps: preparing micron In and nano Cu @ Ag core-shell mixed soldering paste; step two: processing a substrate; step three: coating/printing of solder paste; step four: hot pressing/electromagnetic induction sintering. The micron In and the nanometer Cu @ Ag core shell can be matched with each other, so that the space is fully utilized, the porosity is reduced, the cost of raw materials can be greatly reduced, and great advantages are brought into play In industrial mass production. The invention can realize low-temperature connection and high-temperature service, not only reduces the interconnection temperature and interconnection conditions, but also effectively reduces pores and holes in formed joints, can interconnect the chip and the substrate under the low-temperature and non-pressure condition to complete the connection and packaging of semiconductor devices, and can be better applied to the fields of manufacturing of semiconductor devices, microelectronic packaging, power electronic packaging and the like.
Description
Technical Field
The invention belongs to the technical field of electronic packaging micro-interconnection, and relates to an interconnection process of a micron In and nano Cu @ Ag core-shell mixed material for low-temperature connection and high-temperature service.
Background
With the rapid development of third-generation power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN), the use temperature of the third-generation power semiconductor devices can reach 250 ℃ to 300 ℃, the traditional chip mounting interconnection material is difficult to meet the high-temperature working condition, and a new substitute material is urgently needed to be searched. Due to the size effect of the metal nano material, the melting point of the metal nano particles is reduced along with the reduction of the size of the nano particles, so that the metal nano material can be sintered and molded at a temperature far lower than the melting point of a block. Meanwhile, the nano material can stably work at a higher temperature for a long time after being sintered, so that the requirements of low-temperature sintering and high-temperature service are well met, and the nano material is an ideal chip interconnection material. The nano Ag has low sintering temperature, high service temperature, excellent electrical conductivity and thermal conductivity, and strong corrosion resistance and oxidation resistance, but the phenomena of electromigration and chemical migration are serious, which easily causes short circuit failure of a circuit, and the reliability of the product is seriously influenced. The nano Cu is very easy to oxidize, and the generated oxide can increase the sintering temperature and also influence the electric and thermal conductivity of the welding spot.
In order to solve the above problems, some researchers have prepared a nano cu @ ag core-shell structure. The structural characteristics of the core Cu and the shell Ag can give full play to the advantages of the two materials, the requirements of improving silver migration resistance and copper oxidation resistance can be met, and the nanometer core-shell material has the problems of high porosity and holes.
Disclosure of Invention
Aiming at the problems of the existing nano Cu @ Ag core-shell material, the invention provides an interconnection process of a micron In and nano Cu @ Ag core-shell mixed material for low-temperature connection and high-temperature service. The hybrid interconnection process reduces the porosity and the holes of the joint, and greatly reduces the interconnection temperature and the interconnection condition on the premise of ensuring the conductivity of the interconnection material.
The purpose of the invention is realized by the following technical scheme:
an interconnection process of a micron In and nanometer Cu @ Ag core-shell mixed material comprises the following two technical schemes:
the first technical scheme is as follows:
the method comprises the following steps: preparation of micron In and nano Cu @ Ag core-shell mixed soldering paste
Weighing a certain amount of dried micron In particles, pouring the micron In particles into the nano Cu @ Ag core-shell particle solution, centrifuging after ultrasonic treatment, placing the mixture into a vacuum drying oven, and drying the mixture for 4 hours at room temperature under the vacuum condition of-1 MPa;
and a second step of placing the dried mixed powder of the nano Cu @ Ag core-shell particles and the micron In particles into a mortar, adding a proper amount of organic dispersant, fully grinding to uniformly mix the particles and grinding the particles into paste to obtain the micron In and nano Cu @ Ag core-shell mixed soldering paste, wherein: the organic dispersing agent can be one or a mixture of more of polyethylene glycol-400, ethanol, butanol, ethylene glycol and propylene glycol, and the mass percentage of the nano Cu @ Ag core-shell particles and the micron In particles In the mixed powder is 70-95%: 5 to 30 percent, wherein the mass percentage of the mixed powder in the mixed soldering paste to the organic dispersant is 80 to 90 percent: 10% -20%;
step two: treatment of substrates
Removing oil stains on the surface of the substrate by using acetone, and removing surface oxides by using dilute hydrochloric acid;
secondly, after drying, polishing the cleaned substrate, and further removing the surface oxide film;
step three, placing the treated substrate in a vacuum drying oven, and storing at room temperature under the vacuum condition of-1 MPa;
step three: application of solder paste
Step three, uniformly coating the micron In and nano Cu @ Ag core-shell mixed soldering paste on the substrate treated In the step four In a screen printing mode, wherein: the coating thickness of the micron In and nano Cu @ Ag core-shell mixed solder paste on the substrate is 50 to 200 mu m;
placing the substrate coated with the soldering paste in a constant-temperature drying box, preheating for 5-30 min at the temperature of 110-140 ℃, removing part of residual absolute ethyl alcohol in the soldering paste, and avoiding forming more air holes in a sintering tissue;
step four: hot pressed sintering
The chip is arranged on the soldering paste to be assembled into a sandwich structure, and is placed into a hot press to be sintered, wherein: the heating mode adopts double-side heating, the temperature rise rate is 4 to 6 ℃/min, the pressure is 1 to 10MPa, the heating temperature is 300 to 400 ℃, and the heating time is 5 to 30 min;
the second technical scheme is as follows:
the method comprises the following steps: preparation of micron In and nano Cu @ Ag core-shell mixed soldering paste
Weighing a certain amount of dried micron In particles, pouring the dried micron In particles into the nano Cu @ Ag core-shell particle solution, performing ultrasonic treatment, centrifuging, placing In a vacuum drying oven, and drying at room temperature for 4 hours under the vacuum condition of-1 MPa;
and a second step of placing the dried mixed powder of the nano Cu @ Ag core-shell particles and the micron In particles into a mortar, adding a proper amount of organic dispersant, fully grinding to uniformly mix the particles and grinding the particles into paste to obtain the micron In and nano Cu @ Ag core-shell mixed soldering paste, wherein: the organic dispersing agent can be one or a mixture of more of polyethylene glycol-400, ethanol, butanol, ethylene glycol and propylene glycol, and the mass percentage of the nano Cu @ Ag core-shell particles and the micron In particles In the mixed powder is 70-95%: 5 to 30 percent, wherein the mass percentage of the mixed powder in the mixed soldering paste to the organic dispersant is 80 to 90 percent: 10% -20%;
step two: treatment of substrates
Removing oil stains on the surface of the substrate by using acetone, and removing surface oxides by using dilute hydrochloric acid;
secondly, after drying, polishing the cleaned substrate to further remove the surface oxide film;
placing the treated substrate in a vacuum drying oven, and storing at room temperature under the vacuum condition of-1 MPa;
step three: printing of solder paste
Arrange the mask version In the central point of base plate and put, use the medicine spoon to paint nanometer Cu @ Ag and micron In mixed soldering paste evenly on the base plate surface to use the scraper to strike off the soldering paste surface, and strike off unnecessary soldering paste, obtain the good base plate of printing, wherein: the coating thickness of the micron In and nano Cu @ Ag core-shell mixed solder paste on the substrate is 60 to 80 mu m;
step four: electromagnetic induction sintering
Base plate and chip after will printing assemble into sandwich structure, exert certain pressure to the sandwich structure sample that assembles to it carries out quick sintering to put into electromagnetic induction heating equipment's output copper pipe upper end, wherein: the heating power is 24 to 28KW, the sintering time is 10 to 30s, and the applied pressure is 1 to 10MPa.
In the invention, the preparation method of the nano Cu particles is the prior art, and can be prepared by a liquid phase reduction method, an electrolytic method, a solvothermal method and other methods, taking the liquid phase reduction method as an example, the specific preparation method is as follows:
under the conditions of normal temperature and normal pressure, normal pressure at the temperature of not higher than 100 ℃ or hydrothermal condition, carrying out redox reaction on soluble copper salt (such as copper sulfate, copper acetate and the like) and reducing agent (such as hydrazine hydrate, ascorbic acid, sodium borohydride, formaldehyde and the like) in alkaline solution to obtain nano Cu particles, and controlling the morphology and size of the nano Cu particles by adjusting the pH value of the solution, the concentration of the soluble copper salt, the reaction time and the reaction temperature.
In the invention, the preparation method of the nano Cu @ Ag core shell is the prior art, and can be prepared by using a displacement method, composite chemical plating, chemical reduction and other methods, taking the displacement method as an example, the specific preparation method is as follows: the preparation method comprises the following steps of firstly, carrying out pre-plating treatment on the nano Cu particles to remove an oxide film and oil stains on the surfaces of the nano Cu particles, and then carrying out a displacement reaction to obtain the nano Cu @ Ag core-shell particles, wherein the specific displacement method comprises the following steps: adding the silver-ammonia complex solution (or the EDTA complex solution) into a dispersion system of the nano Cu particles, and carrying out a displacement reaction on the surfaces of the nano Cu particles to form a Cu @ Ag core-shell particle solution.
Compared with the prior art, the invention has the following advantages:
1. the melting point of In the micron In particles and the nano Cu @ Ag core-shell mixed material is only 156.6 ℃, so that connection can be carried out at a lower reflux temperature. When In is completely exhausted to generate intermetallic compounds, the service temperature of the catalyst is increased. Therefore, low-temperature connection and high-temperature service can be realized.
2. In, ag and Cu can generate intermetallic compounds to improve the spreading performance of the solder, so that the solder has higher reaction speed compared with the traditional Transient Liquid Phase (TLP Transient Liquid Phase) connection.
3. The micron In and the nano Cu @ Ag core shell can be matched with each other, so that the space is fully utilized, the porosity is reduced, the cost of raw materials can be greatly reduced, and great advantages are brought into play In industrial mass production.
4. In, ag and Cu can generate intermetallic compounds, so that the joint strength is improved. Since the inner Cu nuclei remain after the reaction is completed. Compared with the traditional full IMCs (Intermetallic Compound) welding seam, the Cu core can better absorb external stress, so that local stress concentration is relieved, and the shearing resistance of the welding seam is improved. Moreover, as Cu has good electric and heat conductivity, the electric and heat conductivity of the finally formed welding seam is greatly improved compared with that of the traditional full IMCs welding seam.
5. The invention can realize low-temperature connection and high-temperature service, not only reduces the interconnection temperature and interconnection conditions, but also effectively reduces pores and holes in formed joints, can interconnect the chip and the substrate under the low-temperature and non-pressure condition to complete the connection and packaging of semiconductor devices, and can be better applied to the fields of manufacturing of semiconductor devices, microelectronic packaging, power electronic packaging and the like.
Drawings
Fig. 1 is a schematic diagram of sintering using printed micron In particles and nano cu @ ag core-shell hybrid solder paste.
Detailed Description
The technical solutions of the present invention are further described below with reference to the following examples, but the present invention is not limited thereto, and any modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Example 1:
the embodiment provides an interconnection process of micron In particles and a nano Cu @ Ag core-shell mixed material, wherein nano Cu particles are prepared through a liquid phase reduction method, then a nano Cu @ Ag core-shell material is prepared through a displacement method, and the nano Cu @ Ag core-shell material is mixed with micron In particles to finally obtain the nano Cu @ Ag core-shell and micron In mixed soldering paste. Printing the mixed solder paste of the nano Cu @ Ag core shell and the micron In on a substrate, assembling the printed substrate and the chip into a sandwich structure to obtain an integral device, and sintering the integral device under certain pressure to obtain the interconnection device. The specific implementation steps are as follows:
the method comprises the following steps: and (4) preparing the nano Cu particles. At normal temperature and normal pressure, copper sulfate and hydrazine hydrate undergo redox reaction in an alkaline solution with the pH value of 12 to obtain the nano Cu particles.
Step two: and (3) preparation of nano Cu @ Ag. And (2) carrying out pre-plating treatment on the nano Cu particles prepared in the first step to remove an oxide film and oil stains on the surface of the nano Cu particles, and then carrying out a displacement reaction to obtain the nano Cu @ Ag particles.
Step three: weighing a certain amount of dried micron In particles, pouring the micron In particles into the nano Cu @ Ag particle solution, centrifuging after ultrasonic treatment, and placing the mixture In a vacuum drying oven for drying. Then putting the dried mixed powder of the nano Cu @ Ag and the micron In particles into a mortar, adding a proper amount of polyethylene glycol-400, fully grinding to uniformly mix the powder and grinding the powder into paste, wherein the mass percentage of the nano Cu @ -Ag core-shell particles to the micron In particles In the mixed powder is 80%:20 percent, wherein the mass percentage of the mixed powder and the organic dispersant in the mixed soldering paste is 85 percent: 15 percent.
Step four: and (4) processing the substrate. Firstly, removing oil stains on the surface of the substrate by using acetone, and removing surface oxides by using dilute hydrochloric acid. After drying, the cleaned substrate copper plate is polished by using 1000 # and 2000 # sandpaper in sequence, so that the surface oxide film can be further removed, and the surface roughness is increased to facilitate the wetting of the soldering paste. And (5) placing the treated substrate in a vacuum drying oven for storage.
Step five: the core-shell mixed solder paste of micron In and nanometer Cu @ Ag is evenly coated on the substrate In a screen printing mode, and the thickness of the solder paste is about 80 mu m. Then placing in a constant temperature drying oven, preheating at 140 deg.C for 10 min, removing part of residual anhydrous alcohol in the solder paste, and avoiding formation of more pores in sintered tissue.
Step six: the copper chip is arranged on the soldering paste to be assembled into a sandwich structure and placed into the hot press, the heating mode adopts double-side heating, and compared with single-side heating, the heating of the sample is more uniform, and the thermal stress can be reduced. The selected temperature rise rate is 5 ℃/min, the pressure is 5MPa, and the heating temperature is 300 ℃; the heating time was 30 min.
Example 2:
this example differs from example 1 in that: in the first step, under the water bath heating condition of 80 ℃, copper sulfate and hydrazine hydrate are subjected to oxidation-reduction reaction in an alkaline solution with the pH value of 12 to obtain the nano Cu particles.
Example 3:
this example differs from example 1 in that: and In the third step, after the prepared nano Cu @ Ag particles and micron In particles are cleaned and centrifuged, the supernatant is poured out and placed In a vacuum drying oven for drying. Then weighing the two particles according to a certain proportion, placing the particles into an agate mortar, fully grinding for a certain time to uniformly mix the particles, adding a proper amount of organic dispersant, and grinding the particles into paste.
Example 4:
this example differs from example 1 in that: in the third step, the weighed PEG-400 and the powder were mixed by running the mixer at 1000 r/min for 80 seconds to obtain a mixed slurry.
Example 5:
this example differs from example 1 in that: and fifthly, placing the mask plate In the central position of the substrate, uniformly coating the mixed solder paste of the nano Cu @ Ag and the micron In on the surface of the substrate by using a medicine spoon, scraping the surface of the solder paste by using a scraper, and scraping redundant solder paste to obtain the printed substrate.
Example 6:
this example differs from example 1 in that: in the sixth step, the heating temperature is 350 ℃; the heating time was 30 min.
Example 7:
this example differs from example 1 in that: in the sixth step, the heating temperature is 350 ℃; the heating time was 60 min.
Example 8:
this example differs from example 1 in that: in the sixth step, the selected heating temperature is 300 ℃; the heating time is 60 min.
Example 9:
this example differs from example 1 in that: in the sixth step, the selected heating temperature is 400 ℃; the heating time was 30 min.
Example 10:
this example differs from example 1 in that: in the sixth step, the selected heating temperature is 400 ℃; the heating time is 60 min.
Example 11:
this example differs from example 1 in that: in the sixth step, the heating temperature is 350 ℃; the heating time was 30 min.
Example 12:
this example differs from example 1 in that: and step six, sintering by using electromagnetic heating equipment, wherein the heating power is 26kW, the sintering time is 15s, and the applied pressure is 5MPa.
Claims (10)
1. An interconnection process of micron In and nanometer Cu @ Ag core-shell mixed materials is characterized by comprising the following steps:
the method comprises the following steps: preparation of micron In and nano Cu @ Ag core-shell mixed soldering paste
Weighing dried micron In particles, pouring the micron In particles into the nano Cu @ Ag core-shell particle solution, performing ultrasonic treatment, centrifuging and placing In a vacuum drying oven for drying;
putting the dried mixed powder of the nano Cu @ Ag core-shell particles and the micron In particles into a mortar, adding an organic dispersant, fully grinding to uniformly mix the particles and grinding the particles into a paste to obtain micron In and nano Cu @ Ag core-shell mixed soldering paste;
step two: treatment of substrates
Removing oil stains on the surface of the substrate by using acetone, and removing surface oxides by using dilute hydrochloric acid;
secondly, after drying, polishing the cleaned substrate, and further removing the surface oxide film;
step two, placing the treated substrate in a vacuum drying oven for storage;
step three: application of solder paste
Step three, uniformly coating the micron In and nano Cu @ Ag core-shell mixed solder paste on the substrate treated In the step four In a screen printing mode;
placing the substrate coated with the soldering paste in a constant-temperature drying oven for preheating;
step four: hot pressed sintering
And placing the chip on the soldering paste to assemble a sandwich structure, and placing the sandwich structure into a hot press for sintering.
2. The interconnection process of the micron In and nanometer Cu @ Ag core-shell mixed material according to claim 1, characterized In that In the step one, the drying conditions are as follows: drying at room temperature under-1 MPa vacuum for 4 h; in the first step and the second step, the organic dispersing agent is one or a mixture of more of polyethylene glycol-400, ethanol, butanol, ethylene glycol and propylene glycol, and the mass percentage of the nano Cu @ Ag core-shell particles and the micron In particles In the mixed powder is 70 to 95 percent: 5 to 30 percent, wherein the mass percentage of the mixed powder in the mixed soldering paste to the organic dispersant is 80 to 90 percent: 10% -20%.
3. The interconnection process of the micron In and nanometer Cu @ Ag core-shell mixed material according to claim 1, wherein In the second step and the third step, the storage conditions are as follows: storing at room temperature under-1 MPa vacuum condition.
4. The interconnection process of the micron In and nanometer Cu @ Ag core-shell mixed material according to claim 1, wherein In the third step, the coating thickness of the micron In and nanometer Cu @ Ag core-shell mixed solder paste on the substrate is 50 to 200 μm; in the third step, the preheating conditions are as follows: preheating for 5-30 min under the condition of 110-140 ℃.
5. The interconnection process of the micron In and nano Cu @ Ag core-shell mixed material as claimed In claim 1, wherein In the fourth step, the sintering conditions are as follows: the heating mode adopts double-side heating, the temperature rise rate is 4 to 6 ℃/min, the pressure is 1 to 10MPa, the heating temperature is 300 to 400 ℃, and the heating time is 5 to 30 min.
6. An interconnection process of micron In and nanometer Cu @ Ag core-shell mixed materials is characterized by comprising the following steps:
the method comprises the following steps: preparation of micron In and nano Cu @ Ag core-shell mixed soldering paste
Weighing dried micron In particles, pouring the micron In particles into the nano Cu @ Ag core-shell particle solution, performing ultrasonic treatment, centrifuging and placing In a vacuum drying oven for drying;
step two, placing the dried mixed powder of the nano Cu @ Ag core-shell particles and the micron In particles into a mortar, adding an organic dispersing agent, fully grinding to uniformly mix the particles and grinding the particles into paste to obtain micron In and nano Cu @ Ag core-shell mixed soldering paste;
step two: treatment of substrates
Removing oil stains on the surface of the substrate by using acetone, and removing surface oxides by using dilute hydrochloric acid;
secondly, after drying, polishing the cleaned substrate to further remove the surface oxide film;
step two, placing the treated substrate in a vacuum drying oven for storage;
step three: printing of solder paste
Placing the mask plate at the central position of the substrate, uniformly coating the mixed solder paste of the nano Cu @ Ag and the micron In on the surface of the substrate by using a medicine spoon, scraping the surface of the solder paste by using a scraper, and scraping redundant solder paste to obtain a printed substrate;
step four: electromagnetic induction sintering
And assembling the printed substrate and the chip into a sandwich structure, applying pressure to the assembled sandwich structure sample, and placing the sample on the upper end of an output copper pipe of electromagnetic induction heating equipment for rapid sintering.
7. The interconnection process of the micron In and nano Cu @ Ag core-shell mixed material as claimed In claim 6, wherein In the first step, the drying conditions are as follows: drying at room temperature under-1 MPa vacuum for 4 h; in the first step and the second step, the organic dispersing agent is one or a mixture of more of polyethylene glycol-400, ethanol, butanol, ethylene glycol and propylene glycol, and the mass percentage of the nano Cu @ Ag core-shell particles and the micron In particles In the mixed powder is 70 to 95 percent: 5 to 30 percent, wherein the mass percentage of the mixed powder in the mixed soldering paste to the organic dispersant is 80 to 90 percent: 10% -20%.
8. The interconnection process of the micron In and nano Cu @ Ag core-shell mixed material as claimed In claim 6, wherein In the second and third steps, the storage conditions are as follows: storing at room temperature under the vacuum condition of-1 MPa.
9. The interconnection process of the micron In and nanometer Cu @ Ag core-shell mixed material as claimed In claim 6, wherein In the third step, the coating thickness of the micron In and nanometer Cu @ Ag core-shell mixed soldering paste on the substrate is 60 to 80 μm.
10. The interconnection process of the micron In and nanometer Cu @ Ag core-shell mixed material according to claim 6, characterized In that In the fourth step, the sintering conditions are as follows: the heating power is 24 to 28KW, the sintering time is 10 to 30s, and the applied pressure is 1 to 10MPa.
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