CN115406935A - Failure point positioning method, device and system and storage medium - Google Patents

Abstract

The invention discloses a failure point positioning method, a device, a system and a storage medium, wherein the method comprises the following steps: under the condition that a light-transmitting film layer with a first thickness covers a metal layer of a product to be detected, applying a first bias voltage to the product to be detected according to a first frequency corresponding to the first thickness; acquiring a first thermal imaging graph of a product to be detected, and determining a first abnormal area and a first non-abnormal area according to the first thermal imaging graph; and determining a to-be-detected area corresponding to the failure point of the to-be-detected product according to the first abnormal area. By the technical scheme of the embodiment of the invention, the effect of accurately and conveniently determining the area of the failure point in the product to be detected is realized.

Description

Failure point positioning method, device and system and storage medium

Technical Field

The invention relates to the technical field of semiconductor detection, in particular to a failure point positioning method, a failure point positioning device, a failure point positioning system and a storage medium.

Background

Thermal radiation may be generated by short-circuiting or leakage of the semiconductor devices, and a thermal imager may be used for failure analysis of these semiconductor devices. The failure point can be captured and positioned through the thermal imager, so that the leakage current of a failure product is analyzed.

However, in the current semiconductor device, sputtering is performed by using a sputtering process, and a metal plating layer is coated on the surface of the product, and a metal is plated on the surface of the circuit board. If the failure point is located below the metal layer, the failure point is difficult to capture and position by using a thermal imager due to the high heat dissipation speed of the metal layer.

If the failure point is positioned by removing the plating, there is a risk of damaging the product and the cost of positioning detection is increased.

Disclosure of Invention

The invention provides a failure point positioning method, a failure point positioning device, a failure point positioning system and a storage medium, which are used for accurately and conveniently determining the effect of an area where a failure point in a product to be detected is located.

According to one aspect of the present invention, a method for locating a failure point is provided for detecting a failure point of a product to be tested, where the product to be tested includes a functional layer and a metal layer, and the metal layer covers the functional layer; the method comprises the following steps:

under the condition that a light-transmitting film layer with a first thickness covers the metal layer of the product to be detected, applying a first bias voltage to the product to be detected according to a first frequency corresponding to the first thickness;

acquiring a first thermal imaging graph of the product to be detected, and determining a first abnormal area and a first non-abnormal area according to the first thermal imaging graph;

and determining the area to be detected corresponding to the failure point of the product to be detected according to the first abnormal area.

According to another aspect of the present invention, a failure point positioning device is provided for detecting a failure point of a product to be tested, where the product to be tested includes a functional layer and a metal layer, and the metal layer covers the functional layer; the device comprises:

the first detection module is used for applying a first bias voltage to the product to be detected according to a first frequency corresponding to a first thickness under the condition that a light-transmitting film layer with the first thickness is covered on a metal layer of the product to be detected;

the first abnormal area determining module is used for acquiring a first thermal imaging image of the product to be detected and determining a first abnormal area and a first non-abnormal area according to the first thermal imaging image;

and the to-be-detected area determining module is used for determining the to-be-detected area corresponding to the failure point of the to-be-detected product according to the first abnormal area.

According to another aspect of the present invention, there is provided a fail point testing system for performing the fail point locating method according to any one of the embodiments of the present invention; characterized in that, the failure point test system includes:

the power supply unit is used for providing preset frequency and bias voltage for the product to be tested;

an infrared thermal imager comprising an infrared camera, at least one processor, a memory, and a computer program; the infrared camera is used for acquiring a thermal imaging picture of the surface of the product to be detected; a memory communicatively coupled to the at least one processor, the memory storing a computer program executable by the at least one processor, the computer program executable by the at least one processor for determining anomalous regions and non-anomalous regions from the thermal imaging map.

According to another aspect of the present invention, there is provided a computer-readable storage medium storing computer instructions for causing a processor to implement the method for locating a failure point according to any one of the embodiments of the present invention when the computer instructions are executed.

According to the technical scheme of the embodiment of the invention, under the condition that the metal layer of the product to be detected is covered with the light-transmitting film layer with the first thickness, the first bias voltage is applied to the product to be detected according to the first frequency corresponding to the first thickness to obtain the first thermal imaging graph of the product to be detected, the first abnormal area and the first non-abnormal area are determined according to the first thermal imaging graph, heat dissipation is prevented in the mode of covering the light-transmitting film layer, detection is carried out, the area to be detected corresponding to the failure point of the product to be detected is determined according to the first abnormal area, the problem that the failure point is difficult to find and position due to the metal layer on the surface of the product to be detected is solved, and the effect of accurately and conveniently determining the area where the failure point is located in the product to be detected is realized.

It should be understood that the statements in this section do not necessarily identify key or critical features of the embodiments of the present invention, nor do they necessarily limit the scope of the invention. Other features of the present invention will become apparent from the following description.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic flowchart of a failure point positioning method according to an embodiment of the present invention;

fig. 2 is a schematic flowchart of a fail point locating method according to a second embodiment of the present invention;

fig. 3 is a schematic flowchart of a failure point positioning method according to a third embodiment of the present invention;

fig. 4 is an architecture diagram of a failure point positioning apparatus according to a third embodiment of the present invention;

fig. 5 is a schematic structural diagram of a failure point positioning device according to a fourth embodiment of the present invention;

fig. 6 is a schematic structural diagram of an electronic device according to a fifth embodiment of the present invention.

Detailed Description

In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

It will be appreciated that the data involved in the subject technology, including but not limited to the data itself, the acquisition or use of the data, should comply with the requirements of the corresponding laws and regulations and related regulations.

Example one

Fig. 1 is a schematic flow chart of a failure point locating method according to an embodiment of the present invention, which is applicable to capturing and locating a failure point in a product to be tested having a metal coating, and the method may be implemented by a failure point locating device, which may be implemented in hardware and/or software, and the failure point locating device may be configured in an electronic device.

As shown in fig. 1, the method includes:

s110, under the condition that the metal layer of the product to be detected is covered with the light-transmitting film layer with the first thickness, a first bias voltage is applied to the product to be detected according to a first frequency corresponding to the first thickness.

The product to be tested can be a semiconductor device to be tested for a failure point. The product to be tested comprises a functional layer and a metal layer, and the metal layer covers the functional layer. The functional layer is a circuit area on a semiconductor chip or a circuit board of a product to be tested. An abnormality of the circuit region is often manifested as a short circuit or a leakage current, resulting in abnormal heat radiation. The metal layer may be a metal plating overlying the functional layer, for example: copper layers, stainless steel layers, and the like. The light-transmitting film layer may be a film layer that filters visible light. Because the thermal imaging camera captures infrared light, optionally, the light-transmitting film layer is an infrared light-transmitting film. The first thickness may be a thickness of the light-transmitting film that is preset for preliminarily screening the area where the failure point is located, for example: 0.15mm, etc. The first frequency may be a frequency value corresponding to the first thickness, for example: the first frequency corresponding to 0.15mm is 0.2Hz, etc. It should be noted that the corresponding relationship between the first frequency and the first thickness and the specific numerical values of the first frequency and the first thickness may be set according to actual requirements, and are not specifically limited in this embodiment. The first bias voltage may be a bias voltage having a first frequency.

Specifically, a product to be detected is determined, and a light-transmitting film layer with a first thickness is covered on a metal layer of the product to be detected. And determining a first frequency according to a pre-established corresponding relation between the first thickness and the first frequency, and applying a first bias voltage to the product to be tested according to the first frequency.

S120, obtaining a first thermal imaging diagram of the product to be detected, and determining a first abnormal area and a first non-abnormal area according to the first thermal imaging diagram.

The first thermal imaging graph can be a thermal imaging graph measured after a product to be measured covering the light-transmitting film layer with the first thickness generates heat through the first bias voltage. The first abnormal area may be an area on the product to be tested corresponding to a pixel value in the first thermal imaging map where the temperature value reaches the first preset condition. The first preset condition may be that the temperature value is greater than a preset temperature threshold, or that the temperature value is within a preset proportional range, such as: the temperature value is from high to low first 10%, etc. Of course, the first preset condition may also be a condition for identifying the first abnormal area set according to actual requirements, and is not specifically limited in this embodiment. The first non-abnormal region may be a region other than the first abnormal region in a region corresponding to the metal layer of the product to be tested.

Specifically, through applying first bias voltage to the product that awaits measuring to make the product that awaits measuring heat production, because covered the printing opacity rete of the first thickness of one deck on the metal level, slowed down the heat dissipation, be favorable to improving the formation of image accuracy of first thermal imaging picture. The method comprises the steps of obtaining a first thermal imaging graph of a product to be detected, screening according to temperature values represented by all pixel points in the first thermal imaging graph, determining a first abnormal area in the product to be detected according to the pixel points of which the temperature values reach a first preset condition, and taking an area outside the first abnormal area as a first non-abnormal area.

In this case, all the regions corresponding to the metal layer are the first non-abnormal regions.

Optionally, a device such as an infrared thermal imager may be used to more accurately obtain and analyze the first thermal image, specifically, the first thermal image of the product to be detected may be obtained in the following manner, and the first abnormal area and the first non-abnormal area are determined according to the first thermal image:

acquiring a first thermal imaging graph of a product to be detected based on an infrared thermal imager; according to the temperature value corresponding to each pixel point in the first thermal imaging graph and a preset temperature threshold value, taking an area corresponding to the pixel point of which the temperature value reaches the preset temperature threshold value in the product to be detected as a first abnormal area, and taking an area except the first abnormal area in the area corresponding to the metal layer as a first non-abnormal area.

The infrared thermal imager can be an instrument which converts invisible infrared energy emitted by an object into a visible thermal imaging graph, and different colors on the thermal imaging graph represent different temperatures of the measured object. The preset temperature threshold may be a temperature value for distinguishing the first abnormal region from the first non-abnormal region.

Specifically, the product to be detected can be detected through the infrared thermal imager, and a first thermal imaging graph of the product to be detected after the first bias voltage is applied is obtained. According to the first thermal imaging graph, the temperature value corresponding to each pixel point in the first thermal imaging graph can be determined, then the pixel points with the temperature values larger than the preset temperature threshold value are determined, the areas, corresponding to the pixel points, on the product to be detected are used as first abnormal areas, and the areas, except the first abnormal areas, in the areas corresponding to the metal layers are used as first non-abnormal areas.

S130, determining a to-be-detected area corresponding to the failure point of the to-be-detected product according to the first abnormal area.

The failure point may be a location point of a short circuit or a leakage current of a circuit region in the semiconductor device. The region to be detected may be a region containing a point of failure.

Specifically, after the first abnormal region is determined, the first abnormal region may be used as a region to be detected corresponding to the failure point of the product to be detected.

According to the technical scheme of the embodiment of the invention, under the condition that the metal layer of the product to be detected is covered with the light-transmitting film layer with the first thickness, the first bias voltage is applied to the product to be detected according to the first frequency corresponding to the first thickness to obtain the first thermal imaging graph of the product to be detected, the first abnormal area and the first non-abnormal area are determined according to the first thermal imaging graph, heat dissipation is prevented in the mode of covering the light-transmitting film layer, detection is carried out, the area to be detected corresponding to the failure point of the product to be detected is determined according to the first abnormal area, the problem that the failure point is difficult to find and position due to the metal layer on the surface of the product to be detected is solved, and the effect of accurately and conveniently determining the area where the failure point is located in the product to be detected is realized.

Example two

Fig. 2 is a schematic flow chart of a failure point positioning method according to a second embodiment of the present invention, and the embodiment further detects the first non-abnormal area on the basis of the second embodiment, where a specific detection manner may refer to detailed description of the present technical solution. The same or corresponding terms as those in the above embodiments are not explained in detail herein.

As shown in fig. 2, the method includes:

s210, under the condition that the metal layer of the product to be detected is covered with the light-transmitting film layer with the first thickness, applying a first bias voltage to the product to be detected according to a first frequency corresponding to the first thickness.

S220, obtaining a first thermal imaging graph of the product to be detected, and determining a first abnormal area and a first non-abnormal area according to the first thermal imaging graph.

And S230, under the condition that the first non-abnormal area is covered with the light-transmitting film layer with the second thickness, applying a second bias voltage to the product to be tested according to a second frequency corresponding to the second thickness.

Wherein, the second thickness may be a thickness of a light-transmitting film layer preset for screening the area where the failure point is located again, for example: 0.45mm, etc. The second frequency may be a frequency value corresponding to the second thickness, for example: the second frequency corresponding to 0.45mm is 2Hz, etc. It should be noted that the corresponding relationship between the second frequency and the second thickness and the specific numerical values of the second frequency and the second thickness may be set according to actual requirements, and are not specifically limited in this embodiment. The second bias voltage may be a bias voltage having a second frequency. Optionally, the second thickness is greater than the first thickness, and the second frequency is greater than the first frequency.

Specifically, a transparent film layer with a second thickness is covered on a first non-abnormal area of the product to be tested, a second frequency is determined according to a pre-established corresponding relation between the second thickness and the second frequency, and a second bias voltage is applied to the product to be tested according to the second frequency.

It should be noted that the transparent film layer with the second thickness covering the first non-abnormal region may be a transparent film layer with a difference thickness (a difference between the second thickness and the first thickness) added on the transparent film layer with the first thickness, or a transparent film layer with a second thickness covered after the transparent film layer with the first thickness is removed. Illustratively, the first thickness is 0.15mm, and the second thickness is 0.45mm, then, in the first non-abnormal region, a 0.3mm light-transmitting film layer may be added on the basis of the 0.15mm light-transmitting film layer, so that the light-transmitting film layer covered on the first non-abnormal region reaches the second thickness.

S240, obtaining a second thermal imaging image of the product to be detected, and determining a second abnormal area according to the second thermal imaging image.

The second thermal imaging graph may be a thermal imaging graph measured after a second bias voltage generates heat on the first non-abnormal region of the transparent film layer covering the second thickness. The second abnormal region may be a sub-region in the first non-abnormal region corresponding to a pixel value in the second thermal image whose temperature value reaches the second preset condition. The second preset condition may be that the temperature value is greater than the preset abnormal threshold, or that the temperature value is within a preset proportional range, such as: the temperature value is from high to low first 10%, etc. Of course, the second preset condition may also be a condition set according to actual requirements for identifying the second abnormal area, and is not specifically limited in this embodiment.

Specifically, second bias voltage is applied to the product to be detected, so that the product to be detected generates heat, and the light-transmitting film layer with the second thickness covers the first non-abnormal area of the metal layer, so that heat dissipation is slowed down, and the imaging accuracy of the second thermal imaging graph is improved. And obtaining a second thermal imaging graph of the product to be detected, screening according to temperature values represented by all pixel points in the second thermal imaging graph, and determining a second abnormal area in the product to be detected according to the pixel points of which the temperature values reach a second preset condition.

Optionally, a second thermal imaging graph of the product to be detected may be obtained in the following manner, and a second abnormal area may be determined according to the second thermal imaging graph:

acquiring a second thermal imaging graph of the product to be detected based on the infrared thermal imager; and according to the temperature value corresponding to each pixel point in the second thermal imaging graph and a preset abnormal threshold value, taking the area corresponding to the pixel point of which the temperature value reaches the preset abnormal threshold value in the product to be detected as a second abnormal area.

Wherein the preset abnormality threshold may be a temperature value for determining the second abnormality region.

Specifically, the product to be detected can be detected through the infrared thermal imager, and a second thermal imaging diagram of the product to be detected after the second bias voltage is applied is obtained. According to the second thermal imaging graph, the temperature values corresponding to all the pixel points in the second thermal imaging graph can be determined, then the pixel points with the temperature values larger than the preset abnormal threshold value are determined, and the areas, corresponding to the pixel points, on the product to be detected are used as second abnormal areas.

And S250, determining a to-be-detected area corresponding to the failure point of the to-be-detected product according to the first abnormal area and the second abnormal area. Specifically, after the first abnormal region and the second abnormal region are determined, a set of the first abnormal region and the second abnormal region may be used as a region to be detected corresponding to the failure point of the product to be detected.

Optionally, the area to be detected corresponding to the failure point of the product to be detected may be determined according to the first abnormal area and the second abnormal area through the following four conditions:

in case one, when the first abnormal region is empty and the second abnormal region is not empty, the second abnormal region is regarded as the region to be detected.

Specifically, if the first abnormal area is empty, it indicates that there is no first abnormal area, that is, the area where the failure point is not detected through the first thermal imaging map after the first bias voltage is applied. If the second abnormal area is not empty, the second abnormal area is indicated, namely the area where the failure point is detected through the second thermal imaging map after the second bias voltage is applied. Therefore, the second abnormal region can be regarded as the region to be detected.

And in the second situation, under the condition that the first abnormal area is not empty and the second abnormal area is empty, the first abnormal area is taken as the area to be detected.

Specifically, if the first abnormal region is not empty, it indicates that the first abnormal region exists, that is, the region where the failure point has been detected by the first thermal imaging map after the first bias voltage is applied. If the second abnormal area is empty, it indicates that there is no second abnormal area, i.e. the area where the failure point is not detected through the second thermal imaging map after the second bias voltage is applied. Therefore, the first abnormal region can be regarded as the region to be detected.

And thirdly, determining that the to-be-detected product does not have the to-be-detected area corresponding to the failure point under the condition that the first abnormal area is empty and the second abnormal area is empty.

Specifically, if the first abnormal region is empty, it indicates that there is no first abnormal region, i.e., the region where the failure point is not detected through the first thermal imaging map after the first bias voltage is applied. If the second abnormal area is empty, it indicates that there is no second abnormal area, i.e. the area where the failure point is not detected through the second thermal imaging map after the second bias voltage is applied. Therefore, the product to be detected does not have a failure point, and a region to be detected corresponding to the failure point does not exist.

And in case that the first abnormal region is not empty and the second abnormal region is not empty, taking the first abnormal region and the second abnormal region as the regions to be detected.

Specifically, if the first abnormal region is not empty, it indicates that the first abnormal region exists, that is, the region where the failure point has been detected by the first thermal imaging map after the first bias voltage is applied. If the second abnormal area is not empty, the second abnormal area is present, namely the area where the failure point is detected through the second thermal imaging graph after the second bias voltage is applied. Therefore, the sum of the first abnormal region and the second abnormal region can be regarded as the region to be detected.

According to the technical scheme, under the condition that the metal layer of the product to be tested is covered with the light-transmitting film layer with the first thickness, the first bias voltage is applied to the product to be tested according to the first frequency corresponding to the first thickness, the first thermal imaging graph of the product to be tested is obtained, the first abnormal area and the first non-abnormal area are determined according to the first thermal imaging graph so as to perform the first test, under the condition that the light-transmitting film layer with the second thickness is covered on the first non-abnormal area, the second bias voltage is applied to the product to be tested according to the second frequency corresponding to the second thickness, the second thermal imaging graph of the product to be tested is obtained, the second abnormal area is determined according to the second frequency corresponding to the second thickness, the area to be tested corresponding to the failure point of the product to be tested is determined, the problem that the failure point is difficult to find and position due to the metal layer on the surface of the product to be tested is solved, and the effect of accurately and conveniently determining the area where the failure point is located in the product to be tested is achieved.

EXAMPLE III

Fig. 3 is a schematic flow chart of a failure point positioning method according to a third embodiment of the present invention, and in this embodiment, on the basis of the foregoing embodiment, when the first abnormal area is not empty and the second abnormal area is not empty, reference may be made to detailed description of the present technical solution for a specific implementation manner of determining priorities of the first abnormal area and the second abnormal area. The same or corresponding terms as those in the above embodiments are not explained in detail herein.

As shown in fig. 3, the method includes:

s310, under the condition that the metal layer of the product to be tested is covered with the light-transmitting film layer with the first thickness, according to the first frequency corresponding to the first thickness, a first bias voltage is applied to the product to be tested.

S320, obtaining a first thermal imaging graph of the product to be detected, and determining a first abnormal area and a first non-abnormal area according to the first thermal imaging graph.

S330, under the condition that the first non-abnormal area is covered with the light-transmitting film layer with the second thickness, second bias voltage is applied to the product to be tested according to the second frequency corresponding to the second thickness.

S340, obtaining a second thermal imaging image of the product to be detected, and determining a second abnormal area according to the second thermal imaging image.

And S350, under the condition that the first abnormal area is not empty and the second abnormal area is not empty, taking the first abnormal area and the second abnormal area as the areas to be detected.

Fig. 4 is an architecture diagram of a failing point locating device according to a third embodiment of the present invention. The product to be tested can comprise a multilayer printed circuit board, and a sputtered chip or a metal layer can be arranged on the multilayer printed circuit board. And covering the chip and the metal layer after sputtering with a light-transmitting film layer, and applying bias voltage to the product to be detected based on the power supply so as to determine the abnormal condition of the coverage area of the light-transmitting film layer through an infrared thermal imager.

S360, determining a first abnormal degree of the first abnormal area and a second abnormal degree of the second abnormal area.

Wherein the first anomaly level may be used to measure the severity of the failure condition at the failure point within the first anomaly zone. The second degree of abnormality may be used to gauge the severity of the failure condition at the failure point within the second abnormal region. It should be noted that, when determining the first abnormality degree and the second abnormality degree, the same processing may be performed on the first abnormality region and the second abnormality region, so as to improve the effectiveness of the comparison between the first abnormality degree and the second abnormality degree.

Specifically, the first abnormal region and the second abnormal region are detected again to compare the abnormal degrees of the first abnormal region and the second abnormal region. The re-detection may be performed by comparing the first abnormal region and the second abnormal region to determine which abnormal region has more significant abnormality when the same bias voltage is applied while covering the same thickness. Through the detection again, the abnormal degree among the abnormal regions can be identified, so that a tester can determine the processing sequence of each abnormal region according to the abnormal degree.

Alternatively, the first abnormality degree of the first abnormality region and the second abnormality degree of the second abnormality region may be determined by:

under the condition that the first abnormal area and the second abnormal area are covered with the light-transmitting film layer with the second thickness, applying a third bias voltage to the product to be tested according to a third frequency corresponding to the second thickness; and acquiring a third thermal imaging graph of the product to be detected, and determining a first abnormal degree of the first abnormal area and a second abnormal degree of the second abnormal area according to the third thermal imaging graph.

Wherein the third frequency may be another frequency value corresponding to the second thickness, such as: the second thickness is 0.45mm, the second frequency corresponding to 0.45mm is 2Hz, the third frequency is 1Hz, etc. It should be noted that the corresponding relationship between the third frequency and the second thickness and the specific numerical values of the third frequency and the second thickness may be set according to actual requirements, and are not specifically limited in this embodiment. Optionally, the third frequency is smaller than the second frequency. The third bias voltage may be a bias voltage having a third frequency. The third thermal imaging graph may be a thermal imaging graph measured after the product to be measured covering the transparent film layer with the second thickness generates heat by the third bias voltage.

Specifically, a light-transmitting film layer with a second thickness is covered on the metal layer of the product to be detected. And determining a third frequency according to the pre-established corresponding relation between the second thickness and the third frequency, and applying a third bias voltage to the product to be tested according to the third frequency. A third thermal imaging graph of the product to be detected can be obtained through devices such as an infrared thermal imager, and the first abnormal degree of the first abnormal area and the second abnormal degree of the second abnormal area are determined according to temperature values represented by all pixel points in the third thermal imaging graph. For example: the determining mode of the first abnormal degree may be to use an average value of temperature values corresponding to each pixel point in the first abnormal region as the first abnormal degree, or to process the temperature values corresponding to each pixel point in the first abnormal region based on a preset machine learning model to obtain the first abnormal degree, and specifically, what kind of mode is used to determine the first abnormal degree may be selected according to actual requirements, which is not specifically limited in this embodiment. The determination manner of the second abnormal degree is similar to that of the first abnormal degree, and is not repeated herein.

And S370, determining the processing priority of the to-be-detected region according to the first abnormal degree and the second abnormal degree.

The processing priority may be a priority order of processing the abnormal region.

Specifically, the order of processing the first and second abnormal regions may be determined by comparing the first and second abnormal degrees. For example: the regions with high abnormal degree can be processed firstly to preferentially investigate the serious failure points, and the regions with low abnormal degree can be processed firstly to rapidly investigate the tiny failure points. It should be noted that the judgment criterion of the processing priority may be set according to actual requirements, and is not specifically limited in this embodiment.

Optionally, the abnormal region with a relatively serious abnormal degree may be preferentially processed to avoid a major accident, and according to the first abnormal degree and the second abnormal degree, determining different conditions of the processing priority of the region to be detected may include:

under the condition that the first abnormal degree is higher than the second abnormal degree, the processing priority of the to-be-detected area is higher than the priority of the first abnormal area; otherwise, the processing priority of the to-be-detected area is that the priority of the second abnormal area is higher than that of the first abnormal area.

Specifically, when the first abnormal degree is higher than the second abnormal degree, it indicates that the severity of the failure point in the first abnormal region is higher than the severity of the failure point in the second abnormal region, and the first abnormal region may be preferentially processed, and at this time, the processing priority of the region to be detected is set such that the priority of the first abnormal region is higher than the priority of the second abnormal region. In other cases, the processing priority of the to-be-detected region may be set such that the priority of the second abnormal region is higher than the priority of the first abnormal region.

According to the technical scheme of the embodiment of the invention, under the condition that the first abnormal area is not empty and the second abnormal area is not empty, the first abnormal area and the second abnormal area are used as the areas to be detected, and the processing priority of the areas to be detected is determined according to the first abnormal degree and the second abnormal degree, so that the problem that the processing sequence is difficult to determine when a plurality of areas to be detected exist in a product to be detected is solved, the abnormal degree of each area to be detected is accurately determined, and the processing sequence of each area to be detected is further determined.

Example four

Fig. 5 is a schematic structural diagram of a failure point positioning device according to a fourth embodiment of the present invention. As shown in fig. 5, the apparatus is used for detecting a failure point of a product to be detected, the product to be detected includes a functional layer and a metal layer, and the metal layer covers the functional layer, the apparatus includes: a first detection module 410, a first abnormal region determination module 420, and a to-be-detected region determination module 430.

The first detection module 410 is configured to apply a first bias voltage to the product to be detected according to a first frequency corresponding to a first thickness when a transparent film layer with the first thickness is covered on a metal layer of the product to be detected; a first abnormal region determining module 420, configured to obtain a first thermal imaging diagram of the product to be detected, and determine a first abnormal region and a first non-abnormal region according to the first thermal imaging diagram; and a to-be-detected region determining module 430, configured to determine, according to the first abnormal region, a to-be-detected region corresponding to the failure point of the to-be-detected product.

Optionally, after the determining a first abnormal region and a first non-abnormal region according to the first thermal imaging map, the method further includes: the second detection module is used for applying a second bias voltage to the product to be detected according to a second frequency corresponding to a second thickness under the condition that the first non-abnormal area is covered with a light-transmitting film layer with the second thickness; acquiring a second thermal imaging image of the product to be detected, and determining a second abnormal area according to the second thermal imaging image; correspondingly, the to-be-detected region determining module 430 is further configured to determine, according to the first abnormal region and the second abnormal region, a to-be-detected region corresponding to the failure point of the to-be-detected product.

Optionally, the to-be-detected region determining module 430 is further configured to, when the first abnormal region is empty and the second abnormal region is not empty, take the second abnormal region as the to-be-detected region; taking the first abnormal area as the area to be detected under the condition that the first abnormal area is not empty and the second abnormal area is empty; under the condition that the first abnormal area is empty and the second abnormal area is empty, determining that the to-be-detected area corresponding to the failure point does not exist in the to-be-detected product; and under the condition that the first abnormal region is not empty and the second abnormal region is not empty, taking the first abnormal region and the second abnormal region as the regions to be detected.

Optionally, after the first abnormal region and the second abnormal region are used as the regions to be detected, the apparatus further includes: the processing priority determining module is used for determining a first abnormal degree of the first abnormal area and a second abnormal degree of the second abnormal area; and determining the processing priority of the area to be detected according to the first abnormal degree and the second abnormal degree.

Optionally, the processing priority determining module is further configured to apply a third bias voltage to the product to be tested according to a third frequency corresponding to a second thickness when the first abnormal region and the second abnormal region are covered with a light-transmitting film layer with the second thickness; wherein the third frequency is less than the second frequency; and acquiring a third thermal imaging graph of the product to be detected, and determining a first abnormal degree of the first abnormal area and a second abnormal degree of the second abnormal area according to the third thermal imaging graph.

Optionally, the processing priority determining module is further configured to, when the first abnormal degree is higher than the second abnormal degree, determine the processing priority of the to-be-detected region as that the priority of the first abnormal region is higher than that of the second abnormal region; otherwise, the processing priority of the to-be-detected area is that the priority of the second abnormal area is higher than that of the first abnormal area.

Optionally, the first abnormal area determining module 420 is further configured to obtain a first thermal image of the product to be detected based on an infrared thermal imager; according to the temperature value corresponding to each pixel point in the first thermal imaging graph and a preset temperature threshold value, taking an area, corresponding to the pixel point of which the temperature value reaches the preset temperature threshold value, in the product to be detected as a first abnormal area, and taking an area, except the first abnormal area, in the area corresponding to the metal layer as a first non-abnormal area.

According to the technical scheme of the embodiment of the invention, under the condition that the metal layer of the product to be detected is covered with the light-transmitting film layer with the first thickness, the first bias voltage is applied to the product to be detected according to the first frequency corresponding to the first thickness to obtain the first thermal imaging graph of the product to be detected, the first abnormal area and the first non-abnormal area are determined according to the first thermal imaging graph, heat dissipation is prevented in the mode of covering the light-transmitting film layer, detection is carried out, the area to be detected corresponding to the failure point of the product to be detected is determined according to the first abnormal area, the problem that the failure point is difficult to find and position due to the metal layer on the surface of the product to be detected is solved, and the effect of accurately and conveniently determining the area where the failure point is located in the product to be detected is realized.

The failure point positioning device provided by the embodiment of the invention can execute the failure point positioning method provided by any embodiment of the invention, and has corresponding functional modules and beneficial effects of the execution method.

EXAMPLE five

FIG. 6 shows a schematic block diagram of a point of failure test system that may be used to implement embodiments of the present invention. The failure point testing system comprises: a power supply unit 20 for providing a predetermined frequency and a bias voltage to a product to be tested; the infrared thermal imager 10 comprises an infrared camera 21, and the infrared camera 21 is used for acquiring a thermal imaging graph of the surface of a product to be measured.

As shown in fig. 6, the infrared thermal imaging camera 10 further includes at least one processor 11, and a memory communicatively connected to the at least one processor 11, such as a Read Only Memory (ROM) 12, a Random Access Memory (RAM) 13, and the like, where the memory stores a computer program executable by the at least one processor, and the processor 11 may perform various suitable actions and processes according to the computer program stored in the Read Only Memory (ROM) 12 or the computer program loaded from the storage unit 18 into the Random Access Memory (RAM) 13. In the RAM 13, various programs and data necessary for the operation of the infrared thermal imager 10 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other via a bus 14. An input/output (I/O) interface 15 is also connected to bus 14.

A plurality of components in the infrared thermal imager 10 are connected to the I/O interface 15, including: an infrared camera 21, an input unit 16 such as a keyboard, a mouse, etc.; an output unit 17 such as various types of displays, speakers, and the like; a storage unit 18 such as a magnetic disk, an optical disk, or the like; and a communication unit 19 such as a network card, modem, wireless communication transceiver, etc. The communication unit 19 allows the infrared thermal imager 10 to exchange information/data with other devices via a computer network such as the internet and/or various telecommunication networks.

The processor 11 may be a variety of general and/or special purpose processing components having processing and computing capabilities. Some examples of processor 11 include, but are not limited to, a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), various specialized Artificial Intelligence (AI) computing chips, various processors running machine learning model algorithms, a Digital Signal Processor (DSP), and any suitable processor, controller, microcontroller, or the like. The processor 11 performs the various methods and processes described above, such as the fail point locating method, for determining anomalous regions and non-anomalous regions from the thermal imaging map.

In some embodiments, the fail point locating method may be implemented as a computer program tangibly embodied on a computer-readable storage medium, such as storage unit 18. In some embodiments, part or all of the computer program may be loaded and/or installed onto the infrared thermal imager 10 via the ROM 12 and/or the communication unit 19. When the computer program is loaded into the RAM 13 and executed by the processor 11, one or more steps of the fail point locating method described above may be performed. Alternatively, in other embodiments, the processor 11 may be configured to perform the fail point locating method by any other suitable means (e.g., by means of firmware).

Various implementations of the systems and techniques described here above may be implemented in digital electronic circuitry, integrated circuitry, field Programmable Gate Arrays (FPGAs), application Specific Integrated Circuits (ASICs), application Specific Standard Products (ASSPs), system on a chip (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and/or combinations thereof. These various embodiments may include: implemented in one or more computer programs that are executable and/or interpretable on a programmable system including at least one programmable processor, which may be special or general purpose, receiving data and instructions from, and transmitting data and instructions to, a storage system, at least one input device, and at least one output device.

A computer program for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus, such that the computer programs, when executed by the processor, cause the functions/acts specified in the flowchart and/or block diagram block or blocks to be performed. A computer program can execute entirely on a machine, partly on a machine, as a stand-alone software package partly on a machine and partly on a remote machine or entirely on a remote machine or server.

In the context of the present invention, a computer-readable storage medium may be a tangible medium that can contain, or store a computer program for use by or in connection with an instruction execution system, apparatus, or device. A computer readable storage medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. Alternatively, the computer readable storage medium may be a machine readable signal medium. More specific examples of a machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

To provide for interaction with a user, the systems and techniques described here can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to a user; and a keyboard and a pointing device (e.g., a mouse or a trackball) by which a user can provide input to the electronic device. Other kinds of devices may also be used to provide for interaction with a user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form, including acoustic, speech, or tactile input.

The systems and techniques described here can be implemented in a computing system that includes a back-end component (e.g., as a data server), or that includes a middleware component (e.g., an application server), or that includes a front-end component (e.g., a user computer having a graphical user interface or a web browser through which a user can interact with an implementation of the systems and techniques described here), or any combination of such back-end, middleware, or front-end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: local Area Networks (LANs), wide Area Networks (WANs), blockchain networks, and the internet.

The computing system may include clients and servers. A client and server are generally remote from each other and typically interact through a communication network. The relationship of client and server arises by virtue of computer programs running on the respective computers and having a client-server relationship to each other. The server can be a cloud server, also called a cloud computing server or a cloud host, and is a host product in a cloud computing service system, so that the defects of high management difficulty and weak service expansibility in the traditional physical host and VPS service are overcome.

It should be understood that various forms of the flows shown above may be used, with steps reordered, added, or deleted. For example, the steps described in the present invention may be executed in parallel, sequentially, or in different orders, and are not limited herein as long as the desired results of the technical solution of the present invention can be achieved.

The above-described embodiments should not be construed as limiting the scope of the invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made in accordance with design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A failure point positioning method is used for detecting failure points of a product to be detected, wherein the product to be detected comprises a functional layer and a metal layer, and the metal layer covers the functional layer; it is characterized by comprising:

under the condition that a light-transmitting film layer with a first thickness covers a metal layer of the product to be detected, applying a first bias voltage to the product to be detected according to a first frequency corresponding to the first thickness;

acquiring a first thermal imaging graph of the product to be detected, and determining a first abnormal area and a first non-abnormal area according to the first thermal imaging graph;

and determining a to-be-detected area corresponding to the failure point of the to-be-detected product according to the first abnormal area.

2. The method of claim 1, further comprising, after said determining a first anomalous region and a first non-anomalous region from said first thermal imaging map:

under the condition that the first non-abnormal area is covered with a light-transmitting film layer with a second thickness, applying a second bias voltage to the product to be tested according to a second frequency corresponding to the second thickness;

acquiring a second thermal imaging image of the product to be detected, and determining a second abnormal area according to the second thermal imaging image;

correspondingly, the determining the to-be-detected region corresponding to the failure point of the to-be-detected product according to the first abnormal region includes:

and determining the area to be detected corresponding to the failure point of the product to be detected according to the first abnormal area and the second abnormal area.

3. The method according to claim 2, wherein the determining the region to be detected corresponding to the failure point of the product to be detected according to the first abnormal region and the second abnormal region comprises:

taking the second abnormal area as the area to be detected under the condition that the first abnormal area is empty and the second abnormal area is not empty;

taking the first abnormal area as the area to be detected under the condition that the first abnormal area is not empty and the second abnormal area is empty;

under the condition that the first abnormal area is empty and the second abnormal area is empty, determining that the to-be-detected area corresponding to the failure point does not exist in the to-be-detected product;

and under the condition that the first abnormal area is not empty and the second abnormal area is not empty, taking the first abnormal area and the second abnormal area as the areas to be detected.

4. The method according to claim 3, wherein after the taking the first abnormal region and the second abnormal region as the regions to be detected, further comprising:

determining a first abnormal degree of the first abnormal region and a second abnormal degree of the second abnormal region;

and determining the processing priority of the area to be detected according to the first abnormal degree and the second abnormal degree.

5. The method of claim 4, wherein said determining a first degree of abnormality of the first abnormality region and a second degree of abnormality of the second abnormality region comprises:

under the condition that the first abnormal area and the second abnormal area are covered with a light-transmitting film layer with a second thickness, applying a third bias voltage to the product to be tested according to a third frequency corresponding to the second thickness; wherein the third frequency is less than the second frequency;

and acquiring a third thermal imaging graph of the product to be detected, and determining a first abnormal degree of the first abnormal area and a second abnormal degree of the second abnormal area according to the third thermal imaging graph.

6. The method according to claim 4, wherein the determining the processing priority of the to-be-detected region according to the first abnormality degree and the second abnormality degree comprises:

under the condition that the first abnormal degree is higher than the second abnormal degree, the processing priority of the to-be-detected area is higher than the priority of the first abnormal area;

otherwise, the processing priority of the to-be-detected area is that the priority of the second abnormal area is higher than that of the first abnormal area.

7. The method of claim 1, wherein said obtaining a first thermal image of the product under test and determining a first abnormal region and a first non-abnormal region from the first thermal image comprises:

acquiring a first thermal imaging graph of the product to be detected based on an infrared thermal imager;

according to the temperature value corresponding to each pixel point in the first thermal imaging graph and a preset temperature threshold value, taking an area, corresponding to the pixel point of which the temperature value reaches the preset temperature threshold value, in the product to be detected as a first abnormal area, and taking an area, except the first abnormal area, in the area corresponding to the metal layer as a first non-abnormal area.

8. A failure point positioning device is used for detecting failure points of a product to be detected, wherein the product to be detected comprises a functional layer and a metal layer, and the metal layer covers the functional layer; it is characterized by comprising the following steps:

the first detection module is used for applying a first bias voltage to the product to be detected according to a first frequency corresponding to a first thickness under the condition that a light-transmitting film layer with the first thickness is covered on a metal layer of the product to be detected;

the first abnormal area determining module is used for acquiring a first thermal imaging image of the product to be detected and determining a first abnormal area and a first non-abnormal area according to the first thermal imaging image;

and the to-be-detected area determining module is used for determining the to-be-detected area corresponding to the failure point of the to-be-detected product according to the first abnormal area.

9. A fail point test system for performing the fail point locating method of any one of claims 1-7; characterized in that, the failure point test system includes:

the power supply unit is used for providing preset frequency and bias voltage for the product to be tested;

an infrared thermal imager comprising an infrared camera, at least one processor, a memory and a computer program; the infrared camera is used for acquiring a thermal imaging picture of the surface of the product to be detected; a memory communicatively coupled to the at least one processor, the memory storing a computer program executable by the at least one processor, the computer program executable by the at least one processor for determining anomalous regions and non-anomalous regions from the thermal imaging map.

10. A computer-readable storage medium having stored thereon computer instructions for causing a processor to, when executed, implement the method of fault point location of any of claims 1-7.

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