CN115396608A - Image sensor and electronic device - Google Patents
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- CN115396608A CN115396608A CN202211048394.9A CN202211048394A CN115396608A CN 115396608 A CN115396608 A CN 115396608A CN 202211048394 A CN202211048394 A CN 202211048394A CN 115396608 A CN115396608 A CN 115396608A
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- 230000003287 optical effect Effects 0.000 claims abstract description 104
- 238000005096 rolling process Methods 0.000 claims abstract description 93
- 238000012545 processing Methods 0.000 claims abstract description 82
- 230000008054 signal transmission Effects 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 24
- 238000009792 diffusion process Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 206010034960 Photophobia Diseases 0.000 description 3
- 208000013469 light sensitivity Diseases 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/531—Control of the integration time by controlling rolling shutters in CMOS SSIS
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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Abstract
The application discloses image sensor and electronic equipment belongs to image processing technology field. The image sensor includes: the device comprises a pixel optical layer, a pixel circuit stack layer, a logic processing stack layer, an optical module and a rolling shutter module which are arranged on the pixel optical layer, a global shutter module arranged on the pixel circuit stack layer and a pixel signal processing module arranged on the logic processing stack layer; wherein the optical module is to convert light into electrical charge; the rolling shutter module is connected with the optical module and used for caching the charges converted by the optical module and converting the charges into voltage signals and transmitting the voltage signals to the pixel signal processing module for signal processing; the global shutter module is connected with the rolling shutter module or the optical module and transmits the voltage signal converted by the charge to the pixel signal processing module for signal processing.
Description
Technical Field
The application belongs to the technical field of image processing, and particularly relates to an image sensor and an electronic device.
Background
In a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), there are two pixel exposure methods: rolling shutters and global shutters. The global shutter pixels are divided into charge domain global shutters and voltage domain global shutters.
In the related art, the CIS widely employs a rolling shutter, but since there is a time difference in exposure between pixel rows thereof, a jelly/twist effect is generated for a high-speed moving object in an output picture, and a photographing effect is not good. The charge domain global shutter has a high parasitic light sensitivity due to its own structure, and is liable to cause optical crosstalk, so that the design requirement is high. Due to the structure of the voltage domain global shutter, noises contained in the voltage domain global shutter are difficult to eliminate when the voltage signal is cached and read, and the reading noise is large.
Disclosure of Invention
The embodiment of the application provides an image sensor and electronic equipment, can solve the problem that the CIS is not good in shooting effect no matter adopts rolling shutter or global shutter in the prior art.
In a first aspect, an embodiment of the present application provides an image sensor, including: the device comprises a pixel optical layer, a pixel circuit stack layer, a logic processing stack layer, an optical module and a rolling shutter module which are arranged on the pixel optical layer, a global shutter module arranged on the pixel circuit stack layer and a pixel signal processing module arranged on the logic processing stack layer;
wherein the optical module is to convert light into electrical charge; the rolling shutter module is connected with the optical module and used for caching the charges converted by the optical module and converting the charges into voltage signals and transmitting the voltage signals to the pixel signal processing module for signal processing; the global shutter module is connected with the rolling shutter module or the optical module and transmits the voltage signal converted by the charge to the pixel signal processing module for signal processing.
In a second aspect, an embodiment of the present application provides an electronic device, including the image sensor of the first aspect.
The embodiment of the application discloses an image sensor, which comprises a pixel optical layer, a pixel circuit stack layer and a logic processing stack layer, as well as an optical module and a rolling shutter module which are arranged on the pixel optical layer, a global shutter module arranged on the pixel circuit stack layer and a pixel signal processing module arranged on the logic processing stack layer, wherein the optical module is used for converting light into electric charges, the rolling shutter module is connected with the optical module and used for caching the electric charges converted by the optical module and converting the electric charges into voltage signals to be transmitted to the pixel signal processing module for signal processing, and the global shutter module is connected with the rolling shutter module or the optical module and transmits the voltage signals converted by the electric charges to the pixel signal processing module for signal processing. According to the embodiment of the application, the rolling shutter module and the global shutter module are distributed on different layers instead of being arranged on the same layer, so that the rolling shutter module and the global shutter module can independently output signals and can also output signals together.
Drawings
Fig. 1 is a block diagram of an image sensor provided in an embodiment of the present application;
FIG. 2 is a circuit schematic of an image sensor provided by an embodiment of the present application;
FIG. 3 is another circuit schematic of an image sensor provided by an embodiment of the present application;
fig. 4 is a schematic circuit diagram of an optical module according to an embodiment of the present application.
Wherein,
10-pixel optical layer; 110-an optical module; 111-an optical unit; 120-rolling shutter module;
20-pixel circuit stack layer; 210-a global shutter module; 211-voltage domain global shutter module; 212-charge domain global shutter module;
30-logical processing stack layer;
410-a first bonding link; 420-a second bonding link; 430-third bond link.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present disclosure.
The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that embodiments of the application may be practiced in sequences other than those illustrated or described herein, and that the terms "first," "second," and the like are generally used herein in a generic sense and do not limit the number of terms, e.g., the first term can be one or more than one. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
An image sensor and an electronic device provided in the embodiments of the present application are described in detail below with reference to fig. 1 to 4 through specific embodiments and application scenarios thereof.
As shown in fig. 1, the image sensor provided in the embodiment of the present application is provided. As shown in fig. 1, the image sensor includes: the pixel optical layer 10, the pixel circuit stack layer 20 and the logic processing stack layer 30, as well as the optical module 110 and the rolling shutter module 120 which are arranged on the pixel optical layer 10, the global shutter module 210 which is arranged on the pixel circuit stack layer 20 and the pixel signal processing module which is arranged on the logic processing stack layer 30;
wherein the optical module 110 is used for converting light into electric charges; the rolling shutter module 120 is connected to the optical module 110, and is configured to buffer charges converted by the optical module 110, convert the charges into voltage signals, and transmit the voltage signals to the pixel signal processing module for signal processing; the global shutter module 210 is connected to the rolling shutter module 120 or the optical module 110, and transmits the voltage signal converted by the charge to the pixel signal processing module for signal processing.
In the embodiment of the present application, the image sensor includes a pixel optical layer 10, a pixel circuit stack layer 20, and a logic processing stack layer 30, and an optical module 110 and a rolling shutter module 120 disposed on the pixel optical layer 10, a global shutter module 210 disposed on the pixel circuit stack layer 20, and a pixel signal processing module disposed on the logic processing stack layer 30, where the optical module 110 is configured to convert light into an electric charge, the rolling shutter module 120 is connected to the optical module 110 and is configured to buffer the electric charge converted by the optical module 110 and transmit the electric charge into a voltage signal to the pixel signal processing module for signal processing, and the global shutter module 210 is connected to the rolling shutter module 120 or the optical module 110 and transmits the voltage signal converted by the electric charge to the pixel signal processing module for signal processing. According to the embodiment of the application, the rolling shutter module 120 and the global shutter module 210 are distributed on different layers, but not all the rolling shutter modules are arranged on the same layer, so that the rolling shutter module 120 and the global shutter module 210 can independently output signals and can also output signals together, and because the rolling shutter module 120 and the global shutter module 210 are distributed on different layers, all the rolling shutter module and the global shutter module are independently wired, so that mutual interference can be avoided, parasitic light sensitivity can be reduced, and the shooting effect is improved. And rolling shutter module 120 and global shutter module 210 are disposed on different layers, which can reduce the area of a single pixel, and increase the number of pixels that can be placed in a limited area, thereby improving the resolution.
The global shutter module 210 may include a voltage domain global shutter module 211 and a charge domain global shutter module 212, and since the voltage domain global shutter module 211 receives a voltage signal, it needs to be connected in series behind the rolling shutter module 120, and the charge domain global shutter module 212 receives a charge, it needs to be connected in parallel with the rolling shutter module 120 and disposed behind the optical module 110, which is described in detail in the following embodiments.
As shown in fig. 2, in one possible embodiment of the present application, the global shutter module 210 is a voltage domain global shutter module 211, the image sensor includes a plurality of voltage domain global shutter modules 211 distributed in an array, and an output terminal of each row or column of the voltage domain global shutter modules 211 is connected to the pixel signal processing module.
In this embodiment, a plurality of voltage domain global shutter modules 211 distributed in an array are disposed on the pixel circuit stack layer 20, and an output end of each row or each column of the voltage domain global shutter modules 211 is connected to a pixel signal processing module disposed on the logic processing stack layer 30. That is, the shared conductor of the output signal of the voltage domain global shutter module 211 is row-parallel or column-parallel.
That is, the image sensor may be formed in a serial connection manner, that is, the voltage domain global shutter module 211 is connected in series at the rear end of the rolling shutter module 120, and since the rolling shutter circuit module outputs a voltage signal, the rolling shutter circuit module can only be connected in series by using a voltage domain global shutter structure, so as to reduce Parasitic Light Sensitivity (PLS) and avoid optical crosstalk.
For the connection between different layers, bonding links, for example, a Direct Bonding Interconnect (DBI) manner, and a Trans-Silicon Via (TSV) manner may be used for the connection.
In a specific embodiment of the present application, the output terminal of the voltage domain global shutter module 211 of each row or each column is in signal transmission with the pixel signal processing module through the first bonding link 410.
In one possible embodiment of the present application, the image sensor includes a plurality of optical modules 110 and a plurality of rolling shutter modules 120, each optical module 110 is connected in series with one rolling shutter module 120, the plurality of rolling shutter modules 120 and optical modules 110 connected in series are distributed in an array, the output ends of each row or each column of rolling shutter modules 120 and optical modules 110 connected in series are connected with the pixel signal processing module, and each rolling shutter module 120 is connected in series with a corresponding voltage domain global shutter module 211.
That is, the optical module 110 and the rolling shutter module 120 are on one layer, and the optical module 110 and the rolling shutter module 120 are connected in series, the image sensor includes a plurality of serially connected integers distributed in an array, and an output end of each of the serially connected integers is connected to the pixel signal processing module disposed on the logic processing stack layer 30. That is, the shared conductor of the rolling shutter module 120 output signal is row-parallel or column-parallel. The wiring of the voltage domain global shutter module 211 is independent and does not interfere with each other. Since only the optical module 110 and the rolling shutter module 120 are disposed on the pixel optical layer 10, the area of a single pixel is small, the number of pixels that can be placed in a limited area can be increased, and the resolution can be further improved.
For the connection between different layers, bonding links, for example, a metal bonding DBI manner, may be adopted, and a TSV manner may also be adopted for the connection.
In a specific embodiment of the present application, the output ends of the optical module 110 and the rolling shutter module 120 connected in series in each row or each column are in signal transmission with the pixel signal processing module through the second bonding link 420; each rolling shutter module 120 is connected to the voltage domain global shutter module 211 by a third bonded link 430.
In a specific embodiment of the present application, the voltage domain global shutter module 211 may include: the device comprises a first switch, a voltage domain capacitor, a first modulation switch, a first modulation capacitor, a first source follower and a first signal switch; the first end of the first switch is connected with the rolling shutter module 120, the second end of the first switch is respectively connected with the first end of the voltage domain capacitor and the first end of the first modulation capacitor, the second end of the voltage domain capacitor is grounded, the second end of the first modulation capacitor is respectively connected with the first end of the first modulation switch and the input end of the first source follower, the second end of the first modulation switch is respectively connected with the power supply terminal and the first output end of the first source follower, the second output end of the first source follower is connected with the first end of the first signal switch, and the second end of the first signal switch is used for outputting pixel signals.
Accordingly, the voltage domain global shutter module 211 is connected to the rolling shutter module 120 as follows: the rolling shutter module 120 includes: the first floating diffusion capacitor, the first reset switch, the second source follower and the second signal switch; a first end of the first floating diffusion capacitor is connected with the optical module 110, a first end of the first reset switch and an input end of the second source follower respectively, a second end of the first floating diffusion capacitor is grounded, and a second end of the first reset switch is connected with a power supply terminal and a first output end of the second source follower respectively; and a second output end of the second source follower is respectively connected with a first end of the second signal switch and a first end of the first switch, and a second end of the second signal switch is used for outputting pixel signals.
As shown in fig. 2, the optical module 110 in each Pixel circuit may include an optical unit 111, and the rolling shutter may adopt a conventional 4T-APS (4-Transistor Active Pixel Sensor,4T Active Pixel Sensor) circuit, which is composed of: the fourth switch TX switch transistor of the optical module 110 is responsible for switching of the charge transfer link between the Photodiode (PD) and the first floating diffusion capacitance FD; the first Reset switch FD _ RST transistor is responsible for Reset (Reset) of the FD and participates in implementation of a Correlated Double Sampling (CDS) noise reduction function; the second source follower RS _ SF is a source follower transistor of the rolling shutter module 120, and is responsible for amplifying and reading out the converted voltage signal in the FD; the second signal switch RS _ SEL switch transistor is responsible for transmitting the rolling shutter pixel signal RS _ OUT to the outside of the pixel for back-end processing. An access point of the voltage domain global shutter module 211 is located between the RS _ SF and the RS _ SEL, rolling shutter pixel signals enter the voltage domain capacitor GS _ CAP through the first switch GS _ TX switching transistor for buffering, and the first modulation switch CAL transistor and the first modulation capacitor CAL _ CAP can modulate the buffered voltage. The first source follower GS _ SF is a source follower transistor of the voltage domain global shutter module 211, and is responsible for amplifying and reading out the voltage signal buffered in the GS _ CAP. The first signal switch GS _ SEL switch transistor is responsible for transmitting the global shutter pixel signal GS _ OUT to the outside of the pixel for back-end processing. It should be noted that all transistors in the pixel circuit provided in the embodiments of the present application may be NMOS (N-type metal-oxide-semiconductor) transistors for turning on or off, so as to reduce the circuit layout area of the pixel.
The embodiment of the application can adopt a high-resolution CIS of pixel synthesis, and as shown in fig. 3, a circuit structure of a 4-in-1 pixel synthesis mixed pixel is adopted as one possible implementation. Since the optical module 110 includes 4 optical units 111, each optical unit 111 includes an independent PD and a corresponding TX switch transistor, each optical unit 111 is uniformly connected to the FD of the rolling shutter module 120 in parallel, all PDs in the optical units 111 are exposed to generate charges in the pixel exposure phase, and in the reading phase, the charges in the PDs are transferred to the FD by turning on the TX switches, and the TX switches of the 4 optical units 111 may not be turned on, partially turned on, or turned on all.
In the embodiment of the present application, the rolling shutter module 120 and the voltage domain global shutter module 211 are connected in series to form an image sensor, as shown in fig. 2, the image sensor is an M × N pixel array, the optical module 110 and the rolling shutter module 120 in each pixel are disposed on the pixel optical layer 10, and the voltage domain global shutter module 211 is disposed on the pixel circuit stack layer 20 separately. The bonding link between the two layers is adopted, and the bonding link can be connected with the GS _ CAP and the CAL _ CAP before entering the voltage domain global shutter module 211, namely before the GS _ TX switching transistor, or can be connected with the GS _ CAP and the CAL _ CAP in the voltage domain global shutter module 211, namely after the GS _ TX switching transistor. The signals output by rolling shutter module 120 for each column of each pixel are passed through the shared wire via second bonding link 420 to signal processing modules on the lower logical processing stack layer 30 for subsequent processing. And the signals output by the global shutter module 210 for each pixel of each column are passed by the shared wire via the first bonding link 410 to the signal processing module on the lower logical processing stack layer 30 for subsequent processing.
It is worth noting that the sharing wires of the pixel array can be either Row-Parallel (Row Parallel) or Column-Parallel (Column Parallel). For example, in fig. 1, the shared conductor for the output signal of rolling shutter module 120 is column-parallel, while the shared conductor for the output signal of global shutter module 210 is row-parallel. The signal traces of the rolling shutter module 120 and the signal traces of the voltage domain global shutter module 211 can be independent from each other and do not interfere with each other.
In one possible embodiment of the present application, as shown in fig. 4, the global shutter module 210 is a charge domain global shutter module 212, the image sensor includes a plurality of charge domain global shutter modules 212 distributed in an array, and an output terminal of each row or column of the charge domain global shutter modules 212 is connected to the pixel signal processing module.
In this embodiment, the pixel circuit stack layer 20 is provided with a plurality of charge domain global shutter modules 212 distributed in an array, and an output end of each row or each column of the charge domain global shutter modules 212 is connected to the pixel signal processing module. That is, the shared conductor of the output signal of the charge domain global shutter module 212 is row-parallel or column-parallel.
That is, the image sensor may be formed in a parallel manner, i.e., the charge domain global shutter module 212 is connected in parallel with the rolling shutter module 120.
For the connection between different layers, bonding links, for example, a metal bonding DBI manner, may be adopted, and a TSV manner may also be adopted for the connection.
In one embodiment of the present application, the output of each row or column of the charge domain global shutter module 212 is in signal communication with the pixel signal processing module via a first bonding link 410.
In one possible embodiment of the present application, the image sensor includes a plurality of optical modules 110 and a plurality of rolling shutter modules 120, each optical module 110 is connected in series with one rolling shutter module 120, the plurality of rolling shutter modules 120 and optical modules 110 connected in series are distributed in an array, the output terminals of the rolling shutter modules 120 and optical modules 110 connected in series in each row or each column are connected with the pixel signal processing module, and each rolling shutter module 120 is connected in parallel with a corresponding charge domain global shutter module 212.
That is, the optical module 110 and the rolling shutter module 120 are on one layer, and the optical module 110 and the rolling shutter module 120 are connected in series, and the image sensor includes a plurality of serially connected integers distributed in an array, and an output end of each of the serially connected integers is connected to the pixel signal processing module disposed on the logic processing stack layer 30. That is, the shared conductor of the output signal of the rolling shutter module 120 is row-parallel or column-parallel. The wiring of the charge domain shutter module is independent and does not interfere with each other. Since only the optical module 110 and the rolling shutter module 120 are disposed on the pixel optical layer 10, the area of a single pixel is small, the number of pixels that can be placed in a limited area can be increased, and the resolution can be further improved.
For the connection between different layers, a bonding link may be used, for example, the connection can be performed by metal bonding DBI or TSV.
In a specific embodiment of the present application, the output ends of the optical module 110 and the rolling shutter module 120 connected in series in each row or each column are in signal transmission with the pixel signal processing module through the second bonding link 420; each charge domain global shutter module 212 is connected to the optical module 110 by a third bonding link 430.
In one particular embodiment of the present application, the charge domain global shutter module 212 includes: the second switch, the charge domain capacitor, the third switch, the second floating diffusion capacitor, the second reset switch, the third source follower and the third signal switch; the first end of the second switch is connected with the optical module 110 and the rolling shutter module 120 respectively, the second end of the second switch is connected with the first end of the charge domain capacitor and the first end of the third switch respectively, the second end of the charge domain capacitor is grounded, the second end of the third switch is connected with the first end of the second floating diffusion capacitor, the first end of the second reset switch and the input end of the third source follower respectively, the second end of the second floating diffusion capacitor is grounded, the second end of the second reset switch is connected with the power supply terminal and the first output end of the third source follower respectively, the second output end of the third source follower is connected with the first end of the third signal switch, and the second end of the third signal switch is used for outputting pixel signals.
Accordingly, the voltage domain global shutter module 211 is connected to the rolling shutter module 120 as follows: the rolling shutter module 120 includes: the third floating diffusion capacitor, the third reset switch, the fourth source follower and the fourth signal switch; the first end of the third floating diffusion capacitor is connected with the optical module 110, the first end of the third reset switch, the input end of the fourth source follower and the first end of the second switch respectively, the second end of the third floating diffusion capacitor is grounded, the second end of the third reset switch is connected with the power supply terminal and the first output end of the fourth source follower respectively, the second end of the fourth source follower is connected with the first end of the fourth signal switch, and the second end of the fourth signal switch is used for outputting pixel signals.
As shown in fig. 4, the optical module 110 in each pixel circuit may include one optical unit 111, and the rolling shutter module 120 circuit still adopts a 4T-APS structure. The access point of the charge domain global shutter module 212 is changed to be between the third floating diffusion capacitor FD, the third reset switch FD _ RST, the fourth source follower RS _ SF, and the fourth switch TX transistor since it is a parallel structure. Since the position is an FD charge buffer region and is not converted into a voltage signal, only charge domain global shutter circuit design can be used. After passing through the second switch GS _ TX switching transistor, the charge is buffered directly to the charge domain capacitor GS _ CAP. During reading, the charges buffered in the GS _ CAP are transferred to the second floating diffusion capacitor GS _ FD of a 4T-APS circuit through the third switch GS _ TX2 switch transistor, converted into a voltage signal through the third source follower GS _ SF, and then output as a GS _ OUT signal through the third signal switch GS _ SEL switch transistor. Like FD _ RST, the second reset switch GS _ RST functions to reset the GS _ CAP and GS _ FD capacitances and participate in the CDS function. The embodiment of the application can adopt a high-resolution CIS of pixel synthesis, as shown in fig. 3, which is a possible implementation manner, and adopts a circuit structure of a 4-in-1 pixel synthesis hybrid pixel. Since the optical module 110 includes 4 optical units 111, each optical unit 111 includes an independent PD and a corresponding TX switch transistor, each optical unit 111 is uniformly connected to the FD of the rolling shutter module 120 in parallel, all PDs in the optical units 111 are exposed to generate charges in the pixel exposure phase, and in the reading phase, the charges in the PDs are transferred to the FD by turning on the TX switches, and the TX switches of the 4 optical units 111 may not be turned on, partially turned on, or turned on all.
The embodiment of the present application forms an image sensor by connecting rolling shutter module 120 and charge domain global shutter module 212 in parallel, as shown in fig. 4, the rolling shutter module 120 and optical module 110 in each pixel are disposed on the pixel optical layer 10, and the charge domain global shutter module 212 is disposed on the pixel circuit stack layer 20. The third bonded link 430 must be placed before entering the charge domain global shutter module 212, i.e., before the GS _ TX switch transistor, to ensure the independence and integrity of the charge storage capacitor GS _ CAP, according to the characteristics of the charge domain global shutter module 212, using layer-to-layer bonded links. The signals output by rolling shutter module 120 for each column of each pixel are passed over the shared wire via second bonding link 420 to signal processing modules on the bottom logical processing stack layer 30 for subsequent processing. And the signal output by the charge domain global shutter module 212 for each pixel of each column is passed through the shared wire via the first bonding link 410 to the signal processing module on the lower logical processing stack layer 30 for subsequent processing.
It should be noted that the common lines of the pixel array may be parallel in rows or parallel in columns. For example, in fig. 4, the shared conductors for the output signals of rolling shutter modules 120 of the pixels are row-parallel, while the shared conductors for the output signals of charge domain global shutter modules 212 are column-parallel. The signal traces of the rolling shutter module 120 and the signal traces of the charge domain global shutter module 212 can be made independent from each other and do not interfere with each other.
It is worth mentioning that the image sensor pixel circuit in the present application may comprise a microcontroller.
Control signals may be output by the microcontroller to the respective switching transistors to control them to turn on or off.
The embodiment of the application also provides electronic equipment which comprises the image sensor provided by the embodiment. And the same technical effect can be achieved, and in order to avoid repetition, the description is omitted.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one of 8230, and" comprising 8230does not exclude the presence of additional like elements in a process, method, article, or apparatus comprising the element. Further, it should be noted that the scope of the methods and apparatus of the embodiments of the present application is not limited to performing the functions in the order illustrated or discussed, but may include performing the functions in a substantially simultaneous manner or in a reverse order based on the functions involved, e.g., the methods described may be performed in an order different than that described, and various steps may be added, omitted, or combined. In addition, features described with reference to certain examples may be combined in other examples.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solutions of the present application may be embodied in the form of a software product, which is stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) and includes instructions for enabling a terminal (such as a mobile phone, a computer, a server, an air conditioner, or a network device) to execute the method according to the embodiments of the present application.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the present embodiments are not limited to those precise embodiments, which are intended to be illustrative rather than restrictive, and that various changes and modifications may be effected therein by one skilled in the art without departing from the scope of the appended claims.
Claims (10)
1. An image sensor, comprising: the device comprises a pixel optical layer, a pixel circuit stack layer, a logic processing stack layer, an optical module and a rolling shutter module which are arranged on the pixel optical layer, a global shutter module arranged on the pixel circuit stack layer and a pixel signal processing module arranged on the logic processing stack layer;
wherein the optical module is to convert light into electrical charge; the rolling shutter module is connected with the optical module and used for caching the charges converted by the optical module and converting the charges into voltage signals to be transmitted to the pixel signal processing module for signal processing; the global shutter module is connected with the rolling shutter module or the optical module and transmits the voltage signal converted by the charge to the pixel signal processing module for signal processing.
2. The image sensor according to claim 1, wherein the global shutter module is a voltage domain global shutter module, the image sensor comprises a plurality of voltage domain global shutter modules distributed in an array, and an output terminal of each row or column of the voltage domain global shutter modules is connected to the pixel signal processing module.
3. The image sensor of claim 2, and the output end of each row or column of the voltage domain global shutter module is in signal transmission with the pixel signal processing module through a first bonding link.
4. The image sensor of claim 2, wherein the image sensor comprises a plurality of the optical modules and a plurality of the rolling shutter modules, each of the optical modules is serially connected with one of the rolling shutter modules, the plurality of the serially connected optical modules and the rolling shutter modules are distributed in an array, the output ends of the serially connected optical modules and the rolling shutter modules in each row or each column are connected with the pixel signal processing module, and each of the rolling shutter modules is serially connected with the corresponding voltage domain global shutter module.
5. The image sensor of claim 4, wherein the output ends of the optical module and the rolling shutter module connected in series in each row or each column are in signal transmission with the pixel signal processing module through a second bonding link; each rolling shutter module is connected with the voltage domain global shutter module through a third bonding link.
6. The image sensor according to claim 1, wherein the global shutter module is a charge domain global shutter module, the image sensor comprises a plurality of charge domain global shutter modules distributed in an array, and an output terminal of each row or column of the charge domain global shutter modules is connected to the pixel signal processing module.
7. The image sensor of claim 6, wherein the output of each row or column of the charge domain global shutter module is in signal communication with the pixel signal processing module via a first bonding link.
8. The image sensor of claim 6, wherein the image sensor comprises a plurality of the optical modules and a plurality of the rolling shutter modules, each of the optical modules is serially connected with one of the rolling shutter modules, the plurality of the serially connected optical modules and the rolling shutter modules are distributed in an array, the output ends of the serially connected optical modules and the rolling shutter modules in each row or each column are connected with the pixel signal processing module, and each of the rolling shutter modules is connected with the corresponding charge domain global shutter module in parallel.
9. The image sensor of claim 8, wherein the output ends of the optical module and the rolling shutter module connected in series in each row or each column are in signal transmission with the pixel signal processing module through a second bonding link; each of the charge domain global shutter modules is connected to the optical module by a third bonding link.
10. An electronic device, characterized in that it comprises an image sensor according to any one of claims 1-9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211048394.9A CN115396608A (en) | 2022-08-30 | 2022-08-30 | Image sensor and electronic device |
| PCT/CN2023/114584 WO2024046196A1 (en) | 2022-08-30 | 2023-08-24 | Image sensor and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211048394.9A CN115396608A (en) | 2022-08-30 | 2022-08-30 | Image sensor and electronic device |
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| CN115396608A true CN115396608A (en) | 2022-11-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211048394.9A Pending CN115396608A (en) | 2022-08-30 | 2022-08-30 | Image sensor and electronic device |
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| Country | Link |
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| CN (1) | CN115396608A (en) |
| WO (1) | WO2024046196A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024046196A1 (en) * | 2022-08-30 | 2024-03-07 | 维沃移动通信有限公司 | Image sensor and electronic device |
| WO2024140886A1 (en) * | 2022-12-30 | 2024-07-04 | 维沃移动通信有限公司 | Image processor, photographic module and electronic device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100309340A1 (en) * | 2009-06-03 | 2010-12-09 | Border John N | Image sensor having global and rolling shutter processes for respective sets of pixels of a pixel array |
| US20150296159A1 (en) * | 2014-04-12 | 2015-10-15 | Forza Silicon Corporation | Image Sensors Comprising Hybrid Arrays of Global and Rolling Shutter Pixels |
| JP6903874B2 (en) * | 2016-06-30 | 2021-07-14 | 株式会社ニコン | Imaging device |
| US10070081B2 (en) * | 2017-02-03 | 2018-09-04 | SmartSens Technology (U.S.), Inc. | Stacked image sensor pixel cell with dynamic range enhancement and selectable shutter modes and in-pixel CDS |
| CN115396608A (en) * | 2022-08-30 | 2022-11-25 | 维沃移动通信有限公司 | Image sensor and electronic device |
-
2022
- 2022-08-30 CN CN202211048394.9A patent/CN115396608A/en active Pending
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024046196A1 (en) * | 2022-08-30 | 2024-03-07 | 维沃移动通信有限公司 | Image sensor and electronic device |
| WO2024140886A1 (en) * | 2022-12-30 | 2024-07-04 | 维沃移动通信有限公司 | Image processor, photographic module and electronic device |
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| Publication number | Publication date |
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| WO2024046196A1 (en) | 2024-03-07 |
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