CN115394870A - Semiconductor device and method for manufacturing the same - Google Patents
Semiconductor device and method for manufacturing the same Download PDFInfo
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- CN115394870A CN115394870A CN202211064512.5A CN202211064512A CN115394870A CN 115394870 A CN115394870 A CN 115394870A CN 202211064512 A CN202211064512 A CN 202211064512A CN 115394870 A CN115394870 A CN 115394870A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 230000015556 catabolic process Effects 0.000 abstract description 18
- 150000002500 ions Chemical class 0.000 description 244
- 238000002955 isolation Methods 0.000 description 23
- 230000005684 electric field Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The present invention provides a semiconductor device and a method for manufacturing the same, the semiconductor device including: a substrate; a first ion doped region and a second ion doped region formed in the substrate, the first ion doped region surrounding the second ion doped region, the first ion doped region and the second ion doped region being for forming a photodiode; at least one third ion doping area is formed in the substrate at the periphery of the corner of the first ion doping area at intervals, and the doping type of the third ion doping area is different from that of the first ion doping area. The technical scheme of the invention can effectively solve the problem of the advanced breakdown of the photodiode at the corner position of the edge, thereby improving the uniformity of the breakdown voltage of the photodiode.
Description
Technical Field
The present invention relates to the field of semiconductor integrated circuit fabrication, and more particularly, to a semiconductor device and a method for fabricating the same.
Background
The detector based on the single photon avalanche diode has the characteristics of quick response and high sensitivity, and is widely applied to AR (Augmented Reality)/VR (Virtual Reality) and vehicle-mounted laser radars. In general, in application, single photon avalanche diodes are designed into an array mode to realize multi-target detection and higher resolution, which requires that the breakdown voltage uniformity of the single photon avalanche diodes in the array is good, so that the problem of uniformity can be effectively solved by improving the edge breakdown effect of the device. The most common practice is to form guard rings around the single photon avalanche diode, such as shallow trench isolation structures or ion implanted diode isolation.
Although the problem of edge breakdown of the single photon avalanche diode can be well solved by introducing the guard ring, the electric field at the corner position of the edge of the single photon avalanche diode is stronger than that at other positions of the edge due to the tip effect, and the corner position of the edge is broken down in advance, so that the detector generates miscounting, and the accuracy is reduced.
Therefore, how to improve the early breakdown of the single photon avalanche diode at the corner of the edge to improve the uniformity of the breakdown voltage is an urgent problem to be solved at present.
Disclosure of Invention
The invention aims to provide a semiconductor device and a manufacturing method thereof, which can effectively solve the problem that a photodiode breaks down in advance at the corner position of the edge, thereby improving the uniformity of the breakdown voltage of the photodiode.
To achieve the above object, the present invention provides a semiconductor device comprising:
a substrate;
a first ion doped region and a second ion doped region formed in the substrate, the first ion doped region surrounding the second ion doped region, the first ion doped region and the second ion doped region being for forming a photodiode;
at least one third ion doping area is formed in the substrate at the periphery of the corner of the first ion doping area at intervals, and the doping type of the third ion doping area is different from that of the first ion doping area.
Optionally, the first ion doped region has a polygonal shape with the corner in a cross-sectional shape parallel to the substrate.
Optionally, the semiconductor device further comprises:
and the ion heavily doped region is formed at the top of the second ion doped region, and the doping type of the ion heavily doped region is the same as that of the second ion doped region.
Optionally, the ion doping concentration of the third ion doping region is the same as that of the ion heavily doped region or the second ion doping region.
Optionally, the third ion doped region and the ion heavily doped region have the same depth.
Optionally, the semiconductor device further comprises:
a guard ring formed in the substrate between the first ion doped region and the third ion doped region, the guard ring surrounding the first ion doped region.
The present invention also provides a method of manufacturing a semiconductor device, comprising:
providing a substrate;
forming a first ion doping area, a second ion doping area and at least one third ion doping area in the substrate, wherein the first ion doping area surrounds the second ion doping area, the first ion doping area and the second ion doping area are used for forming a photodiode, the third ion doping area is located at the periphery of the corner of the first ion doping area at intervals, and the doping type of the third ion doping area is different from that of the first ion doping area.
Optionally, the method for manufacturing a semiconductor device further includes:
and forming an ion heavily doped region on the top of the second ion doped region, wherein the doping type of the ion heavily doped region is the same as that of the second ion doped region.
Optionally, the third ion doped region is formed simultaneously with the ion heavily doped region.
Optionally, the method for manufacturing a semiconductor device further includes:
forming a guard ring in the substrate between the first ion doped region and the third ion doped region, the guard ring surrounding the first ion doped region.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. according to the semiconductor device, at least one third ion doping area is formed in the substrate on the periphery of the corner of the first ion doping area, the doping types of the third ion doping area and the first ion doping area are different, and a depletion layer in a PN junction formed between the first ion doping area and the second ion doping area can be expanded towards the third ion doping area on the periphery of the corner of the first ion doping area by utilizing a certain depletion relation between the third ion doping area and the first ion doping area, so that the width of the depletion layer at the corner is increased, the electric field intensity at the corner is further reduced, the voltage resistance of the corner is improved, the problem that the photodiode breaks down in advance at the corner of the edge is effectively solved, the uniformity of the breakdown voltage of the photodiode is improved, and the performance of the semiconductor device is enhanced; and because the width of the depletion layer at the corner position is increased, the width of the depletion layer of the whole semiconductor device is increased, so that the filling factor of the device is effectively increased, and the photon detection efficiency of the device is improved.
2. According to the manufacturing method of the semiconductor device, at least one third ion doping area is formed in the substrate on the periphery of the corner of the first ion doping area, the doping types of the third ion doping area and the first ion doping area are different, and a depletion layer in a PN junction formed between the first ion doping area and the second ion doping area can be expanded towards the direction of the third ion doping area on the periphery of the corner of the first ion doping area by utilizing a certain depletion relation between the third ion doping area and the first ion doping area, so that the width of the depletion layer on the corner is increased, the electric field intensity of the corner is further reduced, the voltage resistance of the corner is improved, the problem that the photodiode breaks down in advance at the corner of the edge is effectively improved, the uniformity of the breakdown voltage of the photodiode is improved, and the performance of the semiconductor device is enhanced; in addition, the width of the depletion layer at the corner position is increased, so that the width of the depletion layer of the whole semiconductor device is increased, the filling factor of the device is effectively increased, and the photon detection efficiency of the device is improved; in addition, the problems can be solved only by forming the third ion doping area, and the method is simple in process and easy to implement.
Drawings
Fig. 1 is a schematic top view of a semiconductor device according to an embodiment of the present invention;
FIG. 2a is a schematic cross-sectional view along direction AA' of the semiconductor device shown in FIG. 1;
FIG. 2b is a schematic cross-sectional view of the semiconductor device shown in FIG. 1 taken along the direction BB';
fig. 3 is a flowchart of a method of manufacturing a semiconductor device according to an embodiment of the present invention.
Wherein the reference numerals of figures 1 to 3 are as follows:
11-a substrate; 12-a first ion doped region; 13-a second ion doped region; 14-a third ion doped region; 15-ion heavily doped region; 16-deep trench isolation structures.
Detailed Description
To make the objects, advantages and features of the present invention more apparent, a semiconductor device and a method for manufacturing the same proposed by the present invention are described in further detail below. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
An embodiment of the present invention provides a semiconductor device including: a substrate; a first ion doping region and a second ion doping region formed in the substrate, the first ion doping region surrounding the second ion doping region, the first ion doping region and the second ion doping region being used for forming a photodiode; at least one third ion doping area is formed in the substrate at the periphery of the corner of the first ion doping area at intervals, and the doping type of the third ion doping area is different from that of the first ion doping area.
The semiconductor device provided in this embodiment will be described in detail with reference to fig. 1 and 2a to 2 b.
The material of the substrate 11 may be any suitable substrate known to those skilled in the art, and may be at least one of the following materials: silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or the like. The substrate 11 itself may be doped with ions of N-type or P-type.
The first ion doping region 12 and the second ion doping region 13 are formed in the substrate 11, the first ion doping region 12 and the second ion doping region 13 both extend from the top surface of the substrate 11 to the bottom surface of the substrate 11, the first ion doping region 12 surrounds the second ion doping region 13, and the doping types of the first ion doping region 12 and the second ion doping region 13 are different, so that the first ion doping region 12 and the second ion doping region 13 form a photodiode. The photodiode can be an avalanche photodiode or a single photon avalanche diode.
The first ion doping region 12 and the second ion doping region 13 are each polygonal with corners in a cross-sectional shape parallel to the substrate 11, for example, a quadrangle with four corners, a hexagon with six corners, an octagon with eight corners, or the like, and the corners may be circular arcs or sharp corners.
Wherein, since the first ion doping region 12 surrounds the second ion doping region 13, the first ion doping region 12 surrounds the lateral portion of the second ion doping region 13 and is a polygon with a ring shape in the cross section parallel to the substrate 11, and the first ion doping region 12 surrounds the bottom portion of the second ion doping region 13 and is a polygon with a solid shape in the cross section parallel to the substrate 11.
In the embodiment shown in fig. 1, the first ion doping region 12 surrounds the lateral portion of the second ion doping region 13 and has a circular quadrilateral shape in the cross section parallel to the substrate 11, the first ion doping region 12 surrounds the bottom portion of the second ion doping region 13 and has a solid quadrilateral shape in the cross section parallel to the substrate 11, and the corner of the quadrilateral shape is a circular arc.
At least one third ion doping region 14 is formed at the top of the substrate 11 at the periphery of the corner of the first ion doping region 12 at intervals, the substrate 11 is arranged between the third ion doping region 14 and the first ion doping region 12 at intervals, and the doping type of the third ion doping region 14 is different from that of the first ion doping region 12.
The cross-sectional shape of the third ion doping region 14 parallel to the substrate 11 may be a circle, a polygon, an arc, or the like. In the embodiment shown in fig. 1, the third ion-doped region 14 having a quadrangular cross-sectional shape parallel to the substrate 11 is formed on the top of the substrate 11 at the periphery of four corners of the first ion-doped region 12.
The semiconductor device may further include an ion heavily doped region 15 formed on the top of the second ion doped region 13, and the doping type of the ion heavily doped region 15 is the same as that of the second ion doped region 13.
If the doping type of the first ion doping region 12 is P-type, the doping types of the second ion doping region 13, the third ion doping region 14 and the ion heavily doped region 15 are N-type; if the doping type of the first ion doping region 12 is N type, the doping types of the second ion doping region 13, the third ion doping region 14 and the ion heavily doped region 15 are P type.
A first electrode (not shown) is formed on the heavily doped ion region 15, and the heavily doped ion region 15 is used for connecting out the second heavily doped ion region 13, so that when a voltage is applied to the second heavily doped ion region 13 through the first electrode, the contact resistance is reduced.
Preferably, as shown in fig. 1, the heavily doped ion region 15 has a ring structure, so as to reduce the area of the heavily doped ion region 15 contacting the first electrode, and avoid the damage to the substrate 11 caused by too large area of the heavily doped region.
Preferably, the ion doping concentration of the third ion doping region 14 is the same as that of the ion heavily doping region 15 or the second ion doping region 12.
Preferably, the third ion doped region 14 and the heavily doped ion region 15 have the same depth.
The semiconductor device further includes a guard ring (not shown) formed in the substrate 11 between the first ion-doped region 12 and the third ion-doped region 14, the guard ring surrounding the first ion-doped region 12, the substrate 11 being spaced apart from each other between the guard ring and the first ion-doped region 12 and between the guard ring and the third ion-doped region 14.
Preferably, the depth of the guard ring is not less than the depth of the first ion doped region 12.
The guard ring can be a shallow trench isolation structure or an ion-doped ring. If the guard ring is an ion-doped ring, the doping type of the ion-doped ring can be N-type or P-type.
The semiconductor device further comprises a ring-shaped deep trench isolation structure 16, the deep trench isolation structure 16 is formed in the substrate 11 at the periphery of the third ion doped region 14, the substrate 11 is spaced between the deep trench isolation structure 16 and the third ion doped region 14, and the deep trench isolation structure 16 is used for realizing isolation between adjacent photodiodes.
The depth of the deep trench isolation structure 16 is not less than the depth of the first ion doped region 12.
The deep trench isolation structure 16 is formed in a ring-shaped trench (not shown) in the substrate 11, and the deep trench isolation structure 16 includes a layer of insulating material (not shown) covering an inner surface of the ring-shaped trench and a conductive layer (not shown) filling the ring-shaped trench.
In addition, a second electrode (not shown) is formed near the top surface of the substrate 11 or the bottom surface of the substrate 11 of the deep trench isolation structure 16, and a reverse bias voltage is applied to the photodiode through the first electrode and the second electrode.
If the photodiode is an avalanche photodiode or a single photon avalanche photodiode, applying a reverse bias voltage to the photodiode through the first electrode and the second electrode when the photodiode is in a working state, so that the working voltage is higher than the breakdown voltage of a PN junction formed between the first ion doping region 12 and the second ion doping region 13, and a voltage difference is formed; under the voltage difference, a depletion layer is generated at the PN junction, and a strong electric field exists in the depletion layer, and the electric field can ensure that the carriers in the region can obtain enough energy to generate avalanche through a collision ionization effect, so that a large avalanche current is generated.
The problem of edge breakdown of the photodiode can be well solved by forming the protection ring, however, the electric field at the corner position of the edge of the photodiode is stronger than the electric fields at other positions of the edge due to the tip effect, so that breakdown occurs at the corner position of the edge in advance, and the detector generates miscounting and reduces the accuracy.
In the semiconductor device of the present invention, at least one third ion doping region 14 is formed in the substrate 11 at the periphery of the corner of the first ion doping region 12, and the doping types of the third ion doping region 14 and the first ion doping region 12 are different, so that by using a certain depletion relationship between the third ion doping region 14 and the first ion doping region 12, the depletion layer in the PN junction formed between the first ion doping region 12 and the second ion doping region 13 can be expanded towards the third ion doping region 14 at the periphery of the corner of the first ion doping region 12, so as to increase the width of the depletion layer at the corner, further reduce the electric field strength at the corner, improve the voltage resistance at the corner, effectively improve the problem of the photodiode that the corner is broken down in advance at the edge, thereby improve the uniformity of the breakdown voltage of the photodiode, and enhance the uniformity of the semiconductor device; and because the width of the depletion layer at the corner position is increased, the width of the depletion layer of the whole semiconductor device is increased, so that the filling factor of the device is effectively increased, and the photon detection efficiency of the device is improved.
An embodiment of the present invention provides a method for manufacturing a semiconductor device, and referring to fig. 3, fig. 3 is a flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present invention, the method for manufacturing a semiconductor device including:
step S1, providing a substrate;
s2, forming a first ion doping area, a second ion doping area and at least one third ion doping area in the substrate, wherein the first ion doping area surrounds the second ion doping area, the first ion doping area and the second ion doping area are used for forming a photodiode, the third ion doping area is located on the periphery of the corner of the first ion doping area at intervals, and the doping types of the third ion doping area and the first ion doping area are different.
The method for manufacturing the semiconductor device according to the present embodiment will be described in more detail with reference to fig. 1 and fig. 2a to 2 b.
According to step S1, a substrate 11 is provided. The substrate 11 itself may be doped with N-type or P-type ions by ion implantation.
The material of the substrate 11 may be any suitable substrate known to those skilled in the art, and may be at least one of the following materials: silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or the like.
According to step S2, a first ion doping region 12, a second ion doping region 13 and at least one third ion doping region 14 are formed in the substrate 11.
The first ion doping region 12 and the second ion doping region 13 both extend from the top surface of the substrate 11 to the bottom surface of the substrate 11, the first ion doping region 12 surrounds the second ion doping region 13, and the doping types of the first ion doping region 12 and the second ion doping region 13 are different, so that the first ion doping region 12 and the second ion doping region 13 form a photodiode. The photodiode can be an avalanche photodiode or a single photon avalanche diode.
The first ion doping region 12 and the second ion doping region 13 are each polygonal with corners in a cross-sectional shape parallel to the substrate 11, for example, a quadrangle with four corners, a hexagon with six corners, an octagon with eight corners, or the like, and the corners may be circular arcs or sharp corners.
Wherein, since the first ion doping region 12 surrounds the second ion doping region 13, the first ion doping region 12 surrounds the lateral portion of the second ion doping region 13 and is a polygon with a ring shape in the cross section parallel to the substrate 11, and the first ion doping region 12 surrounds the bottom portion of the second ion doping region 13 and is a polygon with a solid shape in the cross section parallel to the substrate 11.
In the embodiment shown in fig. 1, the first ion doping region 12 surrounds the lateral portion of the second ion doping region 13 and is a quadrilateral with a ring shape in the cross section parallel to the substrate 11, the first ion doping region 12 surrounds the bottom portion of the second ion doping region 13 and is a solid quadrilateral in the cross section parallel to the substrate 11, and the corner of the quadrilateral is an arc.
At least one third ion doping area 14 is arranged on the top of the substrate 11 at the periphery of the corner of the first ion doping area 12 at intervals, the substrate 11 is arranged between the third ion doping area 14 and the first ion doping area 12 at intervals, and the doping type of the third ion doping area 14 is different from that of the first ion doping area 12.
The cross-sectional shape of the third ion doping region 14 parallel to the substrate 11 may be a circle, a polygon, an arc, or the like. In the embodiment shown in fig. 1, the third ion doping regions 14 having a quadrangular cross-sectional shape parallel to the substrate 11 are formed on the top of the substrate 11 at the periphery of the four corners of the first ion doping region 12.
The manufacturing method of the semiconductor device further includes: forming an ion heavily doped region 15 on the top of the second ion doped region 13, wherein the doping type of the ion heavily doped region 15 is the same as that of the second ion doped region 13.
The first ion doped region 12, the second ion doped region 13, and the third ion doped region 14 may be formed in sequence by an ion implantation process.
Preferably, the third ion doped region 14 and the heavily doped ion region 15 are formed at the same time, so that the ion doping concentrations and depths of the third ion doped region 14 and the heavily doped ion region 15 are the same, and meanwhile, the process steps are saved.
In other embodiments, the third ion doping region 14 and the ion heavily doping region 15 may also be formed at different times, the third ion doping region 14 may be formed before or after the ion heavily doping region 15, and the ion doping concentration of the third ion doping region 14 may be the same as that of the second ion doping region 13.
If the doping type of the first ion doping region 12 is P-type, the doping types of the second ion doping region 13, the third ion doping region 14 and the ion heavily doped region 15 are N-type; if the doping type of the first ion doping region 12 is N type, the doping types of the second ion doping region 13, the third ion doping region 14 and the ion heavily doped region 15 are P type.
The manufacturing method of the semiconductor device further includes: a guard ring (not shown) is formed in the substrate 11 between the first ion doped region 12 and the third ion doped region 14, the guard ring surrounding the first ion doped region 12, the substrate 11 being spaced apart both between the guard ring and the first ion doped region 12 and between the guard ring and the third ion doped region 14.
Preferably, the depth of the guard ring is not less than the depth of the first ion doped region 12.
The guard ring can be a shallow trench isolation structure or an ion-doped ring. If the guard ring is an ion-doped ring, the doping type of the ion-doped ring can be N-type or P-type.
The manufacturing method of the semiconductor device further includes: forming a ring-shaped deep trench isolation structure 16 in the substrate 11 at the periphery of the third ion-doped region 14, wherein the deep trench isolation structure 16 is spaced apart from the third ion-doped region 14 by the substrate 11, and the deep trench isolation structure 16 is used for realizing isolation between adjacent photodiodes.
The sequence of forming the guard ring and the deep trench isolation structure 16 is not limited.
The depth of the deep trench isolation structure 16 is not less than the depth of the first ion doped region 12.
The deep trench isolation structure 16 is formed in a ring-shaped trench (not shown) in the substrate 11, and the deep trench isolation structure 16 includes a layer of insulating material (not shown) covering an inner surface of the ring-shaped trench, and a conductive layer (not shown) filling the ring-shaped trench.
The manufacturing method of the semiconductor device further includes: a first electrode (not shown) is formed on the heavily doped region 15, and a second electrode is formed on the top surface of the substrate 11 near the deep trench isolation structure 16 or the bottom surface of the substrate 11, and a reverse bias voltage is applied to the photodiode through the first electrode and the second electrode.
The heavily doped ion region 15 is used to connect out the second doped ion region 13, so that when a voltage is applied to the second doped ion region 13 through the first electrode, the contact resistance is reduced.
Preferably, as shown in fig. 1, the heavily doped ion region 15 has a ring structure, so as to reduce the area of the heavily doped ion region 15 contacting the first electrode, and avoid the damage to the substrate 11 caused by too large area of the heavily doped region.
If the photodiode is an avalanche photodiode or a single photon avalanche diode, in a working state, applying a reverse bias voltage to the photodiode through the first electrode and the second electrode, so that the working voltage is higher than the breakdown voltage of a PN junction formed between the first ion doping region 12 and the second ion doping region 13 to form a voltage difference; under the voltage difference, a depletion layer is generated at the PN junction, and a strong electric field exists in the depletion layer, so that the electric field can ensure that carriers in the region can obtain enough energy to generate avalanche through a collision ionization effect, and a large avalanche current is generated.
The problem of edge breakdown of the photodiode can be well solved by forming the protection ring, however, the electric field at the corner position of the edge of the photodiode is stronger than the electric fields at other positions of the edge due to the tip effect, so that breakdown occurs at the corner position of the edge in advance, and the detector generates miscounting and reduces the accuracy.
In the manufacturing method of the semiconductor device of the present invention, at least one third ion doping region 14 is formed in the substrate 11 at the periphery of the corner of the first ion doping region 12, and the doping types of the third ion doping region 14 and the first ion doping region 12 are different, so that the depletion layer in the PN junction formed between the first ion doping region 12 and the second ion doping region 13 can be expanded towards the third ion doping region 14 at the periphery of the corner of the first ion doping region 12 by using a certain depletion relationship between the third ion doping region 14 and the first ion doping region 12, the width of the depletion layer at the corner is increased, the electric field intensity at the corner is reduced, the voltage resistance at the corner is improved, the problem that the photodiode breaks down in advance at the corner of the edge is effectively improved, the uniformity of the breakdown voltage of the photodiode is improved, and the performance of the semiconductor device is enhanced; in addition, the width of the depletion layer at the corner position is increased, so that the width of the depletion layer of the whole semiconductor device is increased, the filling factor of the device is effectively increased, and the photon detection efficiency of the device is improved; in addition, the above problems can be solved only by forming the third ion-doped region 14, and the process is simple and easy to implement.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A semiconductor device, comprising:
a substrate;
a first ion doped region and a second ion doped region formed in the substrate, the first ion doped region surrounding the second ion doped region, the first ion doped region and the second ion doped region being for forming a photodiode;
at least one third ion doping area is formed in the substrate at the periphery of the corner of the first ion doping area at intervals, and the doping type of the third ion doping area is different from that of the first ion doping area.
2. The semiconductor device according to claim 1, wherein a cross-sectional shape of the first ion-doped region in parallel with the substrate is a polygon having the corners.
3. The semiconductor device according to claim 1, further comprising:
and the ion heavily doped region is formed at the top of the second ion doped region, and the doping type of the ion heavily doped region is the same as that of the second ion doped region.
4. The semiconductor device according to claim 3, wherein the third ion-doped region has the same ion doping concentration as the ion heavily doped region or the second ion-doped region.
5. The semiconductor device according to claim 3, wherein the third ion-doped region and the ion heavily doped region have the same depth.
6. The semiconductor device according to claim 1, further comprising:
a guard ring formed in the substrate between the first ion doped region and the third ion doped region, the guard ring surrounding the first ion doped region.
7. A method of manufacturing a semiconductor device, comprising:
providing a substrate;
forming a first ion doping area, a second ion doping area and at least one third ion doping area in the substrate, wherein the first ion doping area surrounds the second ion doping area, the first ion doping area and the second ion doping area are used for forming a photodiode, the third ion doping area is located at the periphery of the corner of the first ion doping area at intervals, and the doping type of the third ion doping area is different from that of the first ion doping area.
8. The manufacturing method of a semiconductor device according to claim 7, further comprising:
and forming an ion heavily doped region on the top of the second ion doped region, wherein the doping type of the ion heavily doped region is the same as that of the second ion doped region.
9. The method for manufacturing a semiconductor device according to claim 8, wherein the third ion-doped region is formed simultaneously with the ion heavily doped region.
10. The manufacturing method of a semiconductor device according to claim 1, further comprising:
forming a guard ring in the substrate between the first ion doped region and the third ion doped region, the guard ring surrounding the first ion doped region.
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| CN106449770A (en) * | 2016-12-07 | 2017-02-22 | 天津大学 | Annular-gate single-photon avalanche diode capable of preventing edge breakdown and preparation method of annular-gate single-photon avalanche diode capable of preventing edge breakdown |
| CN108039390A (en) * | 2017-11-22 | 2018-05-15 | 天津大学 | Contactless protection ring single-photon avalanche diode and preparation method |
| CN113299786A (en) * | 2021-05-21 | 2021-08-24 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
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| CN106449770A (en) * | 2016-12-07 | 2017-02-22 | 天津大学 | Annular-gate single-photon avalanche diode capable of preventing edge breakdown and preparation method of annular-gate single-photon avalanche diode capable of preventing edge breakdown |
| CN108039390A (en) * | 2017-11-22 | 2018-05-15 | 天津大学 | Contactless protection ring single-photon avalanche diode and preparation method |
| CN113299786A (en) * | 2021-05-21 | 2021-08-24 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method for manufacturing the same |
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| CN118431316A (en) * | 2024-07-05 | 2024-08-02 | 武汉新芯集成电路股份有限公司 | Semiconductor device and method for manufacturing the same |
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