CN115390184A - Large channel wavelength division multiplexer based on staggered structure - Google Patents
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Abstract
The invention relates to a large-channel wavelength division multiplexer based on a staggered structure. The invention comprises a substrate of a wafer, a buried oxide layer of the wafer, a device layer and SiO of the device from bottom to top 2 The device layer is respectively a micro-ring resonator, a phase shifter, a transmission waveguide and an array waveguide grating, the phase shifter is loaded on the micro-ring, and the micro-ring resonator is connected with the upper and lower array waveguide gratings through the transmission waveguide. The waveguide array grating with two staggered output channel wave crests is cascaded through the micro-ring resonator, the resonance wave crest of the direct end of the micro-ring is correspondingly superposed with the output wave crest of each channel of the lower array waveguide grating, the resonance wave crest of the lower end of the micro-ring resonator is correspondingly superposed with the output wave crest of each channel of the upper array waveguide grating, and the output wave crests of the upper array waveguide grating and the lower array waveguide grating are staggered, so that the alternating waveguide array grating is formedA large channel wavelength division multiplexer for the wrong channel. The invention solves the problem of less wavelength channels of the conventional wavelength division multiplexer, and has good performance in the aspect of low crosstalk.
Description
Technical Field
The invention relates to a large-channel wavelength division multiplexer based on a staggered structure, and belongs to the technical field of semiconductor optical signal transmission.
Background
The optical fiber communication is a communication mode taking light waves as a carrier and optical fibers as a transmission medium, and bears more than 90% of the global communication data capacity, the optical network has the greatest advantage of having a wavelength division multiplexing technology and high-speed and high-capacity transmission capacity, the technical progress of the optical network greatly promotes the development of the optical fiber communication business, and revolutionary revolution is brought to the transmission technology. The silicon photonic device based on the material has extremely small size and low cost, the preparation process of the silicon photonic device is completely compatible with the COMS process and can realize monolithic integration with an IC circuit, and the silicon photonic device becomes one of the hotspots in the research field of optical fiber communication by virtue of the unique advantage. At present, the Silicon photonic medium wavelength division multiplexer mainly has four structures, namely an etched grating (EDG), a Micro-Ring Resonator filter (MRR), a cascaded MZI, and an arrayed waveguide grating (Silicon arrayed waveguide grating). The etching grating is suitable for coarse division multiplexing, cannot realize dense wavelength division multiplexing, and has certain limitation on application range: the micro-ring resonant filter realizes demultiplexing by cascading micro-rings with different radiuses and utilizing resonant wavelength, is influenced by the process, is difficult to control stable wavelength interval, needs to add a tuning system, and causes larger extra power consumption by a plurality of tuning systems; MZI realizes wavelength division multiplexing through arm length difference, and when the number of channels increases, the number of cascading times also increases, the size of a chip increases, and integration is not facilitated. For the above reasons, these three types of silicon photonic devices have not been widely used in the field of wavelength division multiplexing. Since the arrayed waveguide grating AWG has been produced, it has been widely studied because it is more compact, has lower insertion loss and better crosstalk performance than MRR and MZI. There have been reports of developing a 16-channel silicon nitride based AWG that can achieve-3 at a loss of 0.5dB0dB of adjacent channel crosstalk. But due to the low refractive index difference, the footprint of the entire device exceeds 1 square centimeter. Based on the high refractive index contrast characteristic of silicon, a floor area of 400 multiplied by 600 mu m is designed 2 The compact AWG of (a). However, the crosstalk of the adjacent channels is sufficient to be 10 db. In addition, some novel designs, such as a folded structure, are proposed. For example, adding a reflector to the arrayed waveguide to form a 4-channel folded AWG, the crosstalk and insertion loss would be about-20 dB and 3.5dB, respectively, with less than ideal results. Therefore, how to implement a multi-channel high performance AWG in a compact footprint remains a challenge.
Disclosure of Invention
Aiming at the problems and the defects in the prior art, the invention provides the large-channel wavelength division multiplexer based on the staggered structure, and the invention can solve the problems of large channel crosstalk and small number of wavelength channels of the conventional wavelength division multiplexer.
The technical scheme of the invention is as follows: a large channel wavelength division multiplexer based on a staggered structure comprises a substrate of a wafer, a buried oxide layer of the wafer, a device layer and SiO of the device from bottom to top 2 An upper cladding layer, wherein the device layer comprises a micro-ring resonator 110, a phase shifter 120, a lower waveguide 130, a through waveguide 140, an upper arrayed waveguide grating 150 and a lower arrayed waveguide grating 160; the phase shifter 120 is loaded on the micro-ring resonator (110), the download end of the micro-ring resonator 110 is connected with the upper arrayed waveguide grating (150) through the download end waveguide 130, and the through end of the micro-ring resonator (110) is connected with the lower arrayed waveguide grating 160 through the through end waveguide 140.
As a further aspect of the present invention, the micro-ring resonator 110 includes an output straight waveguide 111, a ring resonator 112, an input straight waveguide 113; a first coupling region 5 is arranged between the output straight waveguide 111 and the annular resonant cavity 112 positioned at the lower part of the output straight waveguide 111, a second coupling region 6 is arranged between the input straight waveguide 113 and the annular resonant cavity 112 positioned at the upper part of the input straight waveguide 113, and the phase shifter 120 is a device connected with a power supply and used for adjusting the resonance wavelength of the micro-ring and acts on the annular resonant cavity 112.
As a further scheme of the present invention, the output straight waveguide 111 is divided into an output straight waveguide download end 1 and an output straight waveguide output end 2, and the input straight waveguide 113 is divided into an input straight waveguide input end 3 and an input straight waveguide through end 4.
As a further scheme of the present invention, the downloading terminal waveguide 130 comprises a semicircular curved waveguide and a straight waveguide, and the downloading terminal 1 of the output straight waveguide is connected to the upper input waveguide 8 of the upper arrayed waveguide grating 150 through the downloading terminal waveguide 130.
As a further aspect of the present invention, the through-end waveguide 140 includes an S-bend waveguide and a straight waveguide, and the input straight waveguide through-end 4 of the micro-ring resonator 110 is connected to the lower input waveguide 13 of the lower arrayed waveguide grating 160 through the through-end waveguide 140.
As a further aspect of the present invention, the upper arrayed waveguide grating 150 includes an upper input waveguide 8, an upper input slab waveguide 9, an upper arrayed waveguide 10, an upper output slab waveguide 11, and an upper output waveguide 12; an upper input waveguide 8 is connected to an upper input slab waveguide 9; the upper input slab waveguide 9 is connected with the upper output slab waveguide 11 through the upper array waveguide 10, the upper input slab waveguide 9, the upper array waveguide 10 and the upper output slab waveguide 11 form a Rowland circle structure, and the upper output slab waveguide 11 is connected with the upper output waveguide 12.
As a further aspect of the present invention, the lower arrayed waveguide grating 160 includes a lower input waveguide 13, a lower input slab waveguide 14, a lower arrayed waveguide 15, a lower output slab waveguide 16, and a lower output waveguide 17; the lower input waveguide 13 is connected with a lower input slab waveguide 14; the lower input slab waveguide 14 is connected with a lower output slab waveguide 16 through a lower array waveguide 15, the lower input slab waveguide 14, the lower array waveguide 15 and the lower output slab waveguide 16 form a Rowland circle structure, and the lower output slab waveguide 16 is connected with a lower output waveguide 17.
As a further aspect of the present invention, the free spectral range FSR of the micro-ring resonator 110 is equal to the channel spacing of the upper arrayed waveguide grating 150 and also equal to the channel spacing of the lower arrayed waveguide grating 160.
As a further aspect of the present invention, there is a central wavelength difference of Δ λ between the central wavelengths of the upper and lower arrayed waveguide gratings 150 and 160, and the free spectral range FSR of the micro-ring resonator 110 is equal to 2 Δ λ, where Δ λ represents a channel interval of the upper arrayed waveguide grating 150, and a channel interval of the lower arrayed waveguide grating 160 is also Δ λ.
As a further aspect of the present invention, a resonance peak at the lower end of the micro-ring resonator 110 coincides with a peak wavelength of each channel of the upper arrayed waveguide grating 150, and a resonance peak at the through end of the micro-ring resonator 110 coincides with a peak wavelength of each channel of the lower arrayed waveguide grating 160.
The working principle of the invention is as follows: the refractive index of the waveguide of the micro-ring resonator filter is changed by using the thermo-optic/electro-optic effect through the modulation effect of the phase shifter 120 loaded on the micro-ring resonator 110, so that the resonant center wavelength of the micro-ring resonator 110 is adjusted, the resonant peak at the lower end of the micro-ring is matched with the output peak of the upper arrayed waveguide grating 150 (AWG) (as shown in fig. 5), and the resonant peak at the straight end of the micro-ring is coincided with the output peak of the lower arrayed waveguide grating 160 (AWG) (as shown in fig. 6). In an actual working environment, an optical signal is input from the straight waveguide under the micro-ring, a part of the light enters the ring-shaped resonant cavity 112 through the straight waveguide coupling, after passing through a path of half perimeter, a wavelength signal generating a resonance effect is coupled from the first coupling region 5 of the micro-ring resonator to the output straight waveguide 111, is output from the lower load end thereof, and enters the upper arrayed waveguide grating 150 after passing through a section of curved waveguide. And the other part of light is coupled into the ring-shaped resonant cavity 112 through the straight waveguide, then passes through a path with a perimeter to generate phase change, is coupled into the input straight waveguide 113 through the second coupling region 6 of the micro-ring resonator to interfere with the optical signal of the original input straight waveguide, and the interfered optical signal is output from the input straight waveguide through end 4 and enters the lower arrayed waveguide grating 160 through a section of curved waveguide. The arrayed waveguide grating AWG consists of a strip waveguide and an arrayed waveguide, and along with the linear increase of the length of the arrayed waveguide in the arrayed waveguide grating AWG, the phase change caused by the wavelength change is linearly changed along the output aperture. Thus, the focal point of the light moves along the output surface of the second slab waveguide. The output waveguides are placed at proper positions to obtain the space separation of different wavelength channels, in the invention, the output waveguide positions of an upper arrayed waveguide grating AWG and a lower arrayed waveguide grating AWG are staggered, the micro-ring resonator 110 plays the role of filtering and wave splitting, the resonance wave peak output from the download end of the micro-ring resonator 110 is superposed with each channel wave peak of the upper arrayed waveguide grating 150, the resonance wave peak output from the straight end of the micro-ring resonator 110 is superposed with each channel wave peak of the lower arrayed waveguide grating 160, the resonance wave peaks of the two arrayed waveguide gratings after the superposition of the micro-ring resonator 110 are staggered on a spectrogram, as shown in figure 7, and the free spectral range FSR of the staggered arrayed waveguide grating is larger than n.DELTA.lambda, compared with the conventional arrayed waveguide grating AWG, the channel number doubled can be realized, and the novel large channel wavelength division multiplexer is provided.
The invention has the beneficial effects that: the invention cascades two waveguide array gratings with staggered output channel wave crests through a micro-ring resonator, the resonance wave crest of the straight-through end of the micro-ring is correspondingly superposed with the output wave crest of each channel of a lower Array Waveguide Grating (AWG), the resonance wave crest of the lower end of the micro-ring resonator is correspondingly superposed with the output wave crest of each channel of an upper Array Waveguide Grating (AWG), and the output wave crests of the upper Array Waveguide Grating (AWG) and the lower Array Waveguide Grating (AWG) are arranged in a staggered way, thereby forming the large-channel wavelength division multiplexer with staggered channels. The large-channel wavelength division multiplexing scheme is a new large-channel wavelength division multiplexing scheme, solves the problem that the conventional wavelength division multiplexer is small in number of wavelength channels, and is good in low crosstalk.
Drawings
FIG. 1 is a schematic diagram of a large channel wavelength division multiplexer according to the present invention;
FIG. 2 is a schematic diagram of a micro-ring resonator structure according to the present invention;
FIG. 3 is a schematic view of the structure of the upper arrayed waveguide grating of the present invention;
FIG. 4 is a schematic diagram of a lower arrayed waveguide grating structure of the present invention;
FIG. 5 is a matching graph of the resonance peak of the lower terminal and the channel peak of the upper arrayed waveguide grating of the microring according to the present invention;
FIG. 6 is a matching plot of the straight end harmonic peak of the microring and the lower arrayed waveguide grating channel peak of the present invention;
fig. 7 is a diagram showing the staggering of the wave crests of each output channel of the upper and lower arrayed waveguide gratings according to the present invention.
The reference numbers in the figures: 1-output straight waveguide down-loading end, 2-output straight waveguide output end, 3-input straight waveguide input end, 4-input straight waveguide through end, 5-first coupling region, 6-second coupling region, 8-upper input waveguide, 9-upper input slab waveguide, 10-upper array waveguide, 11-upper output slab waveguide, 12-upper output waveguide, 13-lower input waveguide, 14-lower input slab waveguide, 15-lower array waveguide, 16-lower output slab waveguide, 17-lower output waveguide, 110-micro ring resonator, 120-phase shifter, 130-down-loading end waveguide, 140-through end waveguide, 150-upper array waveguide grating, 160-lower array waveguide grating, 111-output straight waveguide, 112-ring resonator, 113-input straight waveguide.
Detailed Description
The invention is further described with reference to the following figures and specific examples.
Example 1: as shown in FIGS. 1-7, a large channel wavelength division multiplexer based on a staggered structure comprises a substrate of a wafer, a buried oxide layer of the wafer, a device layer and SiO of the device from bottom to top 2 The device layer is made of monocrystalline silicon and comprises a micro-ring resonator 110, a phase shifter 120, a lower loading end waveguide 130, a through end waveguide 140, an upper arrayed waveguide grating 150 and a lower arrayed waveguide grating 160; the phase shifter 120 is loaded on the micro-ring resonator (110), the download end of the micro-ring resonator 110 is connected with the upper arrayed waveguide grating (150) through the download end waveguide 130, and the through end of the micro-ring resonator (110) is connected with the lower arrayed waveguide grating 160 through the through end waveguide 140.
The micro-ring resonator 110 comprises an output straight waveguide 111, a ring-shaped resonant cavity 112 and an input straight waveguide 113; the output straight waveguide 111 is divided into an output straight waveguide download end 1 and an output straight waveguide output end 2, and the input straight waveguide 113 is divided into an input straight waveguide input end 3 and an input straight waveguide through end 4. A first coupling region 5 is arranged between the output straight waveguide 111 and the annular resonant cavity 112 positioned at the lower part of the output straight waveguide 111, a second coupling region 6 is arranged between the input straight waveguide 113 and the annular resonant cavity 112 positioned at the upper part of the input straight waveguide 113, and the phase shifter 120 is a device connected with a power supply and used for adjusting the resonance wavelength of the micro-ring and acts on the annular resonant cavity 112.
The down loading end waveguide 130 comprises a semicircular curved waveguide and a straight waveguide, and the down loading end 1 of the output straight waveguide is connected with the upper input waveguide 8 of the upper array waveguide grating 150 through the down loading end waveguide 130. The through-end waveguide 140 includes an S-bend waveguide and a straight waveguide, and the input straight waveguide through-end 4 of the micro-ring resonator 110 is connected to the lower input waveguide 13 of the lower arrayed waveguide grating 160 through the through-end waveguide 140. The upper array waveguide grating 150 comprises an upper input waveguide 8, an upper input slab waveguide 9, an upper array waveguide 10, an upper output slab waveguide 11 and an upper output waveguide 12; an upper input waveguide 8 is connected to an upper input slab waveguide 9; the upper input slab waveguide 9 is connected with the upper output slab waveguide 11 through the upper array waveguide 10, the upper input slab waveguide 9, the upper array waveguide 10 and the upper output slab waveguide 11 form a Rowland circle structure, and the upper output slab waveguide 11 is connected with the upper output waveguide 12. The lower arrayed waveguide grating 160 includes a lower input waveguide 13, a lower input slab waveguide 14, a lower arrayed waveguide 15, a lower output slab waveguide 16, and a lower output waveguide 17; the lower input waveguide 13 is connected with a lower input slab waveguide 14; the lower input slab waveguide 14 is connected with a lower output slab waveguide 16 through a lower array waveguide 15, the lower input slab waveguide 14, the lower array waveguide 15 and the lower output slab waveguide 16 form a Rowland circle structure, and the lower output slab waveguide 16 is connected with a lower output waveguide 17. The free spectral range FSR of the micro-ring resonator 110 is equal to the channel spacing Δ λ of the upper arrayed waveguide grating 150 and also equal to the channel spacing Δ λ of the lower arrayed waveguide grating 160. The central wavelength difference of Δ λ exists between the central wavelengths of the upper and lower arrayed waveguide gratings 150 and 160, and the free spectral range FSR of the microring resonator 110 is equal to 2 Δ λ. The resonance peak at the lower end of the micro-ring resonator 110 coincides with the peak wavelength of each channel of the upper arrayed waveguide grating 150, and the resonance peak at the straight-through end of the micro-ring resonator 110 coincides with the peak wavelength of each channel of the lower arrayed waveguide grating 160.
A beam of light signals containing different wavelengths is input from a micro-ring input straight waveguide input end 3, a part of light enters an annular resonant cavity through straight waveguide coupling, an electro-optical phase shifter is loaded on the resonant cavity, the waveguide refractive index of a bending waveguide of a micro-ring resonant filter is changed through voltage applied to the electro-optical phase shifter, so that the resonance center wavelength of a micro-ring resonator is adjusted, the resonance peak of a lower end of a micro-ring is matched with the output peak of an upper Arrayed Waveguide Grating (AWG) (shown in figure 5), and meanwhile, the resonance peak of a straight end of the micro-ring is overlapped with the output peak of a lower Arrayed Waveguide Grating (AWG) (shown in figure 6). The optical signal which enters the resonant cavity through the coupling of the second coupling area 6 of the micro-ring resonator is coupled, after passing through a path with half perimeter, the wavelength signal which generates the resonance effect is coupled from the first coupling area 5 of the micro-ring resonator to enter the output straight waveguide 111, is output from the lower load end of the output straight waveguide, and enters the upper array waveguide grating (150) after passing through a section of bent waveguide. After the other part of light enters the annular resonant cavity through the second coupling area 6 of the micro-ring resonator and passes through a path with a perimeter, the other part of light generates phase change, then enters the input straight waveguide (113) through the second coupling area 6 of the micro-ring resonator and interferes with the original optical signal of the input straight waveguide, and the interfered optical signal is output from the input straight waveguide through end 4 and enters the lower array waveguide grating (160) through a section of bent waveguide. The final output spectrum of the two 16-channel arrayed waveguide gratings cascaded by the microring resonator is shown in fig. 7.
The microring resonator 110, the drop terminal waveguide 130, the through terminal waveguide 140, the upper arrayed waveguide grating 150 and the lower arrayed waveguide grating 160 are all on the same top layer silicon of the SOI wafer. The SOI wafer size was 8 inches, the wafer thickness was 725 μm, the buried oxide layer thickness was 2 μm, and the top silicon thickness was 220nm. The arrayed waveguides 10 of the upper arrayed waveguide grating 150 and the lower arrayed waveguide grating 160 are ridge waveguides having a width of 450nm and an etching depth of 100nm, the length difference of the upper arrayed waveguide 10 is 12.95 μm, the radius of the rowland circle is 89.3 μm, the minimum complete radius is 50 μm, the number of diffraction orders is 20, and the channel spacing is 6nm. The drop end waveguide 130 and the through end waveguide 140 are ridge waveguides with a width of 450nm and a height of 200 nm. The input/output waveguides of the micro-ring resonator 110 are all strip waveguides with a width of 450nm, the ring resonator 112 and the coupling regions (the first coupling region 5 and the second coupling region 6) are all ridge waveguides with a width of 450nm and an etching depth of 100nm, the minimum distance between the input/output waveguides and the ring resonator is 200nm, the diameter of the ring resonator is 23 μm, and the free spectral region FSR is 6nm.
on-SOI wafer throughThe waveguide structure of the device is manufactured through multiple photoetching/etching semiconductor processes, and Si0 with the thickness of 1.5 mu m is deposited through a PECVD process after the waveguide is formed 2 Coating, obtaining a smooth surface by reverse etching and polishing, depositing a layer of high-resistance TiN with the thickness of 110nm on the smooth surface by PVD (physical vapor deposition) technology, forming a TiN heating electrode by photoetching/etching, wherein the TiN heating electrode is a turn-back distribution structure with the width of 5 mu m and the total length of 200 mu m, and depositing Si0 with the thickness of 450nm on the TiN electrode material by PECVD (plasma enhanced chemical vapor deposition) technology 2 An isolation layer; forming a heating electrode lead hole above the TiN electrode by photoetching/etching technology, wherein the lead hole is etched and stopped on the TiN heating electrode; and finally, depositing a metal lead material Al with the thickness of 2 microns by adopting a PMI technology, connecting the Al material with a TiN heating electrode, forming an Al metal lead with the width of 10 microns by adopting a photoetching/etching technology, and forming a terminal structure of the Al metal lead in contact with the detection into a square with the side length of 70 microns.
The method comprises the following steps: cleaning a pure silicon wafer, carrying out thermal oxidation to obtain an oxygen buried layer, and carrying out chemical polishing on the obtained surface by utilizing a CMP (chemical mechanical polishing) technology to obtain a smooth surface;
step two: depositing a silicon nitride layer on the buried oxide layer manufactured in the first step by using an LPCVD (low pressure chemical vapor deposition) technology, polishing, then carrying out photoetching, wherein the photoetching comprises photoresist throwing, exposure, development, drying, etching, and finally photoresist removing and cleaning, so that a complete ridge structure and a strip waveguide structure are prepared, and a micro-ring resonator, an array waveguide grating and a transmission waveguide structure are completed;
step three: after cleaning, si waveguide upper SiO layer is deposited by adopting PECVD method 2 And (7) cladding. In order to obtain a smooth and flat upper surface, CMP chemical mechanical polishing is adopted to obtain the smooth upper surface;
step four: removing photoresistCleaning, and depositing SiO by PECVD method 2 And depositing the layer by adopting a PVD method to obtain a TiN electrode layer. Obtaining a heated electrode TiN by photoetching and TiN etching;
step five: removing photoresist, cleaning, and depositing SiO on the upper cladding 2 Then, obtaining a metal lead hole through photoetching and etching;
step six: after photoresist is removed and cleaned, an Al metal layer is deposited by a PVD method, a metal Al lead is obtained through photoetching and etching, and the metal Al is communicated with a heating electrode TiN;
step seven: and after photoresist is removed and cleaned, photoetching and deep etching are carried out to obtain the heat insulation groove. And finally, obtaining a deep etching groove for the optical fiber coupling test through deep etching. Thus finishing the technological processing of the chip.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.
Claims (10)
1. A large channel wavelength division multiplexer based on a staggered structure comprises a substrate of a wafer, a buried oxide layer of the wafer, a device layer and SiO of the device from bottom to top 2 An upper cladding layer, characterized in that: the device layer comprises a micro-ring resonator (110), a phase shifter (120), a lower download end waveguide (130), a through end waveguide (140), an upper arrayed waveguide grating (150) and a lower arrayed waveguide grating (160); the phase shifter (120) is loaded on the micro-ring resonator (110), the downloading end of the micro-ring resonator (110) is connected with the upper arrayed waveguide grating (150) through the downloading end waveguide (130), and the through end of the micro-ring resonator (110) is connected with the lower arrayed waveguide grating (160) through the through end waveguide (140).
2. The interleaving structure based large channel wavelength division multiplexer according to claim 1, wherein: the micro-ring resonator (110) comprises an output straight waveguide (111), an annular resonant cavity (112) and an input straight waveguide (113); a first coupling area (5) is arranged between the output straight waveguide (111) and the annular resonant cavity (112) positioned at the lower part of the output straight waveguide (111), a second coupling area (6) is arranged between the input straight waveguide (113) and the annular resonant cavity (112) positioned at the upper part of the input straight waveguide (113), and a phase shifter (120) is a device for connecting a power supply to adjust the micro-ring resonant wavelength and acts on the annular resonant cavity (112).
3. The interleaving structure-based large channel wavelength division multiplexer according to claim 2, wherein: the output straight waveguide (111) is divided into an output straight waveguide downloading end (1) and an output straight waveguide output end (2), and the input straight waveguide (113) is divided into an input straight waveguide input end (3) and an input straight waveguide through end (4).
4. The interleaving structure-based large channel wavelength division multiplexer according to claim 1, wherein: the down-loading end waveguide (130) comprises a semicircular bent waveguide and a straight waveguide, and the output straight waveguide down-loading end (1) is connected with the upper input waveguide (8) of the upper array waveguide grating (150) through the down-loading end waveguide (130).
5. The interleaving structure-based large channel wavelength division multiplexer according to claim 1, wherein: the straight-through end waveguide (140) comprises an S-shaped bent waveguide and a straight waveguide, and an input straight waveguide straight-through end (4) of the micro-ring resonator (110) is connected with a lower input waveguide (13) of the lower array waveguide grating (160) through the straight-through end waveguide (140).
6. The interleaving structure-based large channel wavelength division multiplexer according to claim 1, wherein: the upper arrayed waveguide grating (150) comprises an upper input waveguide (8), an upper input flat waveguide (9), an upper arrayed waveguide (10), an upper output flat waveguide (11) and an upper output waveguide (12); the upper input waveguide (8) is connected with an upper input slab waveguide (9); the upper input flat waveguide (9) is connected with the upper output flat waveguide (11) through the upper array waveguide (10), the upper input flat waveguide (9), the upper array waveguide (10) and the upper output flat waveguide (11) form a Rowland circle structure, and the upper output flat waveguide (11) is connected with the upper output waveguide (12).
7. The interleaving structure based large channel wavelength division multiplexer according to claim 1, wherein: the lower arrayed waveguide grating (160) comprises a lower input waveguide (13), a lower input slab waveguide (14), a lower arrayed waveguide (15), a lower output slab waveguide (16) and a lower output waveguide (17); the lower input waveguide (13) is connected with a lower input flat waveguide (14); the lower input flat waveguide (14) is connected with the lower output flat waveguide (16) through the lower array waveguide (15), the lower input flat waveguide (14), the lower array waveguide (15) and the lower output flat waveguide (16) form a Rowland circle structure, and the lower output flat waveguide (16) is connected with the lower output waveguide (17).
8. The interleaving structure-based large channel wavelength division multiplexer according to claim 1, wherein: the free spectral range FSR of the micro-ring resonator (110) is equal to the channel spacing of the upper arrayed waveguide grating (150) and is also equal to the channel spacing of the lower arrayed waveguide grating (160).
9. The interleaving structure-based large channel wavelength division multiplexer according to claim 1, wherein: the central wavelength difference of DeltaLambda exists between the central wavelengths of the upper arrayed waveguide grating (150) and the lower arrayed waveguide grating (160), the Free Spectral Range (FSR) of the micro-ring resonator (110) is equal to 2 DeltaLambda, wherein the DeltaLambda represents the channel interval of the upper arrayed waveguide grating (150), and the channel interval of the lower arrayed waveguide grating (160) is also DeltaLambda.
10. The interleaving structure based large channel wavelength division multiplexer according to claim 1, wherein: the resonance peak of the lower end of the micro-ring resonator (110) is coincided with the peak wavelength of each channel of the upper array waveguide grating (150), and the resonance peak of the straight-through end of the micro-ring resonator (110) is coincided with the peak wavelength of each channel of the lower array waveguide grating (160).
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