CN115377306A - Organic light emitting diode, manufacturing method thereof and display device - Google Patents
Organic light emitting diode, manufacturing method thereof and display device Download PDFInfo
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Abstract
The invention relates to an organic light-emitting diode, which comprises a bottom electrode layer, a top electrode layer and a light-emitting layer arranged between the bottom electrode layer and the top electrode layer; the light-emitting layer includes an electron donor layer and a triplet-triplet annihilation layer, the electron donor layer and the triplet-triplet annihilation layer being disposed in a stack; an exciplex for emitting yellow light can be formed between the facing faces of the electron donor layer and the triplet-triplet annihilation layer for emitting blue light, the T of the material of the triplet-triplet annihilation layer 1 Energy level < T of the exciplex 1 Energy level. An exciplex is formed between the electron donor layer of the light-emitting layer and the opposite faces of the triplet-triplet annihilation layer, and yellow light and triplet light are generated from the exciplexThe blue light generated by the linear state-triplet state annihilation layer is complemented to form white light, and compared with the prior art, the white light has fewer layers and simpler manufacturing process.
Description
Technical Field
The invention relates to the field of light emission, in particular to an organic light emitting diode, a manufacturing method thereof and a display device.
Background
An OLED (organic light emitting diode) is a current-type organic light emitting device, and specifically refers to a phenomenon that an organic semiconductor material and a light emitting material emit light by carrier injection and recombination under the driving of an electric field. Compared with liquid crystal display, the OLED has the advantages of being lighter, thinner, high in brightness, low in power consumption, fast in response, high in definition, good in flexibility, high in luminous efficiency and the like, and has outstanding performance advantages in the display field.
After decades of development, the OLED display technology is continuously replacing the liquid crystal display technology and gradually becomes the mainstream. Currently, in small-sized display scenarios, for example: mobile phones, pads, etc., OLEDs have gradually occupied high-end and mid-end markets; and in medium and large size display fields, for example: the OLED occupies a small share in desktop computers, televisions and the like, the main surface layer is caused by high price and insufficient production capacity, and the deeper layer is caused by the fact that the traditional large-size OLED panel mainly adopts a white OLED and a filter structure, wherein the white OLED is a laminated red, green and blue structure, the middle of the white OLED is connected with a charge generation layer, the structure is complex, the number of layers is large, the manufacturing process is complex, the driving voltage is large, and the brightness is low. Therefore, the simplification of the structure of the large-size OLED panel has great significance for the popularization and the application of the OLED display technology.
Disclosure of Invention
Accordingly, the present invention is directed to provide an organic light emitting diode that can replace a stacked complex structure, a method of fabricating the same, and a display device using the same.
The invention provides an organic light-emitting diode, which comprises a bottom electrode layer, a top electrode layer and a light-emitting layer arranged between the bottom electrode layer and the top electrode layer; the light-emitting layer includes an electron donor layer and a triplet-triplet annihilation layer, the electron donor layer and the triplet-triplet annihilation layer being disposed in a stack; an exciplex for emitting yellow light can be formed between the facing faces of the electron donor layer and the triplet-triplet annihilation layer for emitting blue light, the T of the material of the triplet-triplet annihilation layer 1 Energy level < T of the exciplex 1 Energy level.
In one embodiment, the energy level difference between the HOMO level of the electron donor material in the electron donor layer and the LUMO level of the material of the triplet-triplet annihilation layer is between 2.2eV and 2.4eV.
In one embodiment, the triplet-triplet annihilation layer emits light at a wavelength of 460nm to 475nm, and the organic light emitting diode is a white light emitting organic light emitting diode.
In one embodiment, the electron donor layer has a thickness of 10nm to 50nm, and the triplet-triplet annihilation layer has a thickness of 10nm to 30nm.
In one embodiment, the light emitting layer further comprises an interfacial layer disposed between the electron donor layer and the triplet-triplet annihilation layer.
In one embodiment, T of the material of the triplet-triplet annihilation layer 1 Energy level < T of material of the interface layer 1 Energy level < T of the exciplex 1 Energy level, and S of the material of the interface layer 1 Energy level > S of the material of the triplet-triplet annihilation layer 1 Energy level.
In one embodiment, the thickness of the electron donor layer is 10nm to 50nm, the thickness of the interface layer is 3nm to 5nm, and the thickness of the triplet-triplet annihilation layer is 10nm to 20nm.
In one embodiment, the electron donor layer is a mixed material layer formed by mixing an electron donor material with the material of the triplet-triplet annihilation layer.
In one embodiment, the molar ratio of the electron donor material to the material of the triplet-triplet annihilation layer in the mixed material layer is from 9 to 6.
In one embodiment, the light emitting device further comprises at least one of a hole transport layer, a hole injection layer, an electron transport layer and an electron injection layer between the light emitting layer and the corresponding electrode layer.
The invention also provides a manufacturing method of the organic light-emitting diode, which comprises the following steps:
sequentially forming a bottom electrode layer, a light-emitting layer and a top electrode layer which are stacked in a thickness direction on a substrate, wherein the light-emitting layer comprises an electron donor layer and a triplet-triplet annihilation layer, and the electron donor layer and the triplet-triplet annihilation layer are stacked; in the above-mentionedAn exciplex for emitting yellow light can be formed between the facing surfaces of the electron donor layer and the triplet-triplet annihilation layer for emitting blue light, the triplet-triplet annihilation layer being of a material of which T is 1 Energy level < T of the exciplex 1 Energy level.
The invention also provides a display device, which comprises a filter and the organic light-emitting diode in any embodiment, wherein the filter is positioned on the light-emitting side of the organic light-emitting diode.
The organic light emitting diode includes a light emitting layer including an electron donor layer and a triplet-triplet annihilation layer between a bottom electrode layer and a top electrode layer. The electrons and holes injected from the electrode layers at both ends are transmitted, and accumulated between the electron donor layer of the light-emitting layer and the opposite surface of the triplet-triplet annihilation layer to form exciplex excitons, wherein a part of the excitons are radiatively recombined to generate yellow light, and the other part of the excitons are excited by the T of the material of the triplet-triplet annihilation layer 1 Energy level (first excited triplet level) ratio of exciplex T 1 The energy level is small, so that the energy level can be transferred into the triplet-triplet annihilation layer, the process of generating singlet state fusion by the triplet fusion in the triplet-triplet annihilation layer is generated, singlet state excitons are generated and are radiated and compounded to generate blue light, and the yellow light generated by the exciplex and the blue light generated by the triplet-triplet annihilation layer are complemented to form white light. Compared with the organic light emitting diode structure connected through the R/G/B sub-light emitting unit in a laminated mode in the prior art, the organic light emitting diode structure is fewer in layers and simpler in manufacturing process.
Drawings
Fig. 1 is a schematic structural diagram of a white organic light emitting diode according to an embodiment.
Fig. 2 is a schematic diagram of a structure of a light emitting layer according to an embodiment.
Fig. 3 is a schematic view of a structure of a light emitting layer according to another embodiment.
Reference numerals:
10: an organic light emitting diode; 11: substrate 12: a bottom electrode layer; 13: a top electrode layer; 14: a light emitting layer; 141: an electron donor layer; 142: a triplet-triplet annihilation layer; 143: an interfacial layer; 15: a hole transport layer; 16: a hole injection layer; 17: an electron transport layer.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, an embodiment of the invention provides an organic light emitting diode 10, which includes a bottom electrode layer 12, a top electrode layer 13 disposed on a substrate 11, and a light emitting layer 14 disposed between the bottom electrode layer 12 and the top electrode layer 13.
As shown in fig. 2, light-emitting layer 14 includes an electron donor layer 141 and a triplet-triplet annihilation layer 142, and electron donor layer 141 and triplet-triplet annihilation layer 142 are stacked. After the electrons and holes are transported through the electron donor layer 141 and the triplet-triplet annihilation layer 142, exciplexes for emitting yellow light can be formed between the opposing faces of the electron donor layer 141 and the triplet-triplet annihilation layer 142, the triplet-triplet annihilation layer 142 emitting blue light, and the triplet-triplet annihilation layer 142 is made of a material T 1 Energy level < T of exciplex 1 Energy level.
In a specific example, the energy difference between the HOMO level of the electron donor material in the electron donor layer 141 and the LUMO level of the material of the triplet-triplet annihilation layer 142 is between 2.2eV and 2.4eV. In this range, the rapid and stable transport of electrons and holes between the opposing faces of the electron donor layer 141 and the triplet-triplet annihilation layer 142 can be effectively promoted, and the exciplex can be caused to emit yellow light in this energy level difference range.
In a specific example, the wavelength of the luminescence of the exciplex is 540nm to 580nm. In this wavelength range, the exciplex is capable of emitting yellow light. The triplet-triplet annihilation layer 142 emits light at a wavelength of 460nm to 475nm. In this wavelength range, triplet-triplet annihilation layer 142 is capable of emitting blue light. The blue light emitted from the triplet-triplet annihilation layer 142 is complementary to the yellow light emitted from the exciplex, so that the organic light emitting diode 10 emits white light having an emission wavelength of 410nm to 670nm.
The light-emitting layer 14 in the above-described embodiment accumulates exciplex excitons, a portion of which undergoes radiative recombination to generate yellow light, formed between the opposing faces of the electron donor layer 141 and the triplet-triplet annihilation layer 142, and another portion of which is due to T of the material of the triplet-triplet annihilation layer 142 1 T of exciplex 1 The energy level is small, so that the energy level can be transferred into the triplet-triplet annihilation layer 142, a triplet fusion process is carried out in the triplet-triplet annihilation layer 142 to generate singlet, singlet excitons are generated and radiatively compounded to generate blue light, and yellow light generated by the exciplex compound and blue light generated by the triplet-triplet annihilation layer 142 are complemented to form white light.
Alternatively, the material of the electron donor layer 141 may be, but is not limited to, m-MTDATA (4, 4',4 ″ -Tris [ (3-methylphenyl) phenylamine ] triphenylamine, HOMO =5.1ev, lumo =2.0 ev).
Alternatively, the material of the triplet-triplet annihilation layer 142 may be, but is not limited to, phPC (9- (4- (10-phenylanthracene-9-yl) phenyl) -9H-carbazole, HOMO =5.8eV,
LUMO＝2.7eV，T 1 ＝1.7eV，S 1 =2.85 eV) and MADN (2-methyl-9, 10-bis (naphthalene-2-yl) anthracene, HOMO =5.9eV, lumo =2.9eV, t 1 ＝1.8eV，S 1 =2.9 eV).
The total cavity length of the organic light emitting diode 10 has an important effect on the light emitting effect of the light emitting device, and the thickness of the single functional layer in the light emitting layer 14 has little effect on the light emitting efficiency, but can affect the total cavity length of the light emitting device. In a specific example, the thickness of the electron donor layer 141 is 10nm to 50nm, and the thickness of the triplet-triplet annihilation layer 142 is 10nm to 30nm. Specifically, the thickness of the electron donor layer 141 may be, but is not limited to, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, etc., and the thickness of the triplet-triplet annihilation layer 142 may be, but is not limited to, 10nm, 15nm, 20nm, 25nm, 30nm, etc.
Further, the present invention has found that, although white light can be generated by providing the light-emitting layer 14 composed of the electron donor layer 141 and the triplet-triplet annihilation layer 142, since the energy of the blue light exciton generated by the triplet-triplet annihilation layer 142 is reversely transferred to the yellow light exciton of the exciplex, it results in an excessively high yellow light component and an insufficient blue light component in the emission spectrum of the organic light-emitting diode 10. To solve this problem, in another embodiment of the present invention, as shown in fig. 3, an interface layer 143 is further provided between the electron donor layer 141 of the light-emitting layer 14 and the triplet-triplet annihilation layer 142. The interface layer 143 does not block accumulation of exciplex excitons between the electron donor layer 141 and the opposing faces of the triplet-triplet annihilation layer 142, nor transfer of the exciplex excitons to the triplet-triplet annihilation layer 142, but blocks transfer of the excitons of the triplet-triplet annihilation layer 142 to the exciplex in the reverse direction, thereby contributing to an increase in the blue light component of the light-emitting layer 14.
In one specific example, T of the material of triplet-triplet annihilation layer 142 1 Energy level < T of the material of the interface layer 143 1 Energy level < T of exciplex 1 Energy level, S of the material of the interface layer 143 1 Energy level > S of the material of the triplet-triplet annihilation layer 142 1 Energy level. Therefore, triplet excitons of the exciplex can be transferred to the triplet-triplet annihilation layer 142 without being hindered, and at the same time, the singlet excitons of the triplet-triplet annihilation layer 142 are restricted by the blocking of the interface layer 143, avoiding blue light exciton excitonsThe transfer of energy to the yellow excitons facilitates the enhancement of the blue component of the light-emitting layer 14.
Alternatively, the material of the interface layer 143 may be, but is not limited to, 4PPIAN (2, 5-dimethyl-5'-phenyl- [1,1':3 '1' -tert-phenyl)]-4-yl)anthracene，HOMO＝5.9eV，LUMO＝2.8eV，T 1 ＝1.84eV，S 1 ＝3eV)。
In a specific example, the thickness of the electron donor layer 141 is 10nm to 50nm, the thickness of the interface layer 143 is 3nm to 5nm, and the thickness of the triplet-triplet annihilation layer 142 is 10nm to 20nm. Thus, specifically, the thickness of the electron donor layer 141 may be, but not limited to, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, etc., the thickness of the interface layer 143 may be, but not limited to, 3nm, 3.5nm, 4nm, 4.5nm, 5nm, etc., and the thickness of the triplet-triplet annihilation layer 142 may be, but not limited to, 10nm, 13nm, 15nm, 18nm, 20nm, etc. Since the total cavity length of the organic light emitting diode 10 has an important influence on the light emitting effect of the light emitting device, although the thickness of the single functional layer, such as the specific electron donor layer 141, the interface layer 143, and the triplet-triplet annihilation layer 142, in the light emitting layer has little influence on the light emitting efficiency, the total cavity length of the light emitting device is influenced.
Since the interface layer 143 is small in thickness, holes and electrons injected from both end electrode layers can still be accumulated between the facing surfaces of the electron donor layer 141 and the triplet-triplet annihilation layer 142 to form exciplexes, generating yellow light, and energy of a part of the exciplexes excitons is transferred to the triplet-triplet annihilation layer 142, causing the triplet-triplet annihilation layer 142 to generate blue light. Neither the transport of electrons and holes is affected by the presence of the interface layer 143 nor the transport of exciplex exciton energy to the triplet-triplet annihilation layer 142 is affected by the presence of the interface layer 143.
Furthermore, the present invention also finds that although the above invention can produce an organic light emitting diode capable of emitting white light, the organic light emitting diode 10 has the defects of efficiency roll-off and insufficient brightness. To overcome this technical drawback, in yet another embodiment of the present invention, the electron donor layer 141 is provided as a mixed material layer that may be formed by mixing an electron donor material with the material of the triplet-triplet annihilation layer 142. The method using the mixed material layer can widen the exciton recombination zone, widen the interface between the electron donor layer 141 and the triplet-triplet annihilation layer 142, which form the exciplex, contribute to reducing the efficiency roll-off of the organic light emitting diode 10, and improve the luminance of the organic light emitting diode 10.
Specifically, the molar ratio of the electron donor material to the material of the triplet-triplet annihilation layer 142 in the mixed material layer is 9 to 6. In this range, the organic light emitting diode 10 can emit white light, the luminance can be improved, and the efficiency roll-off can be reduced.
The organic light emitting diode 10 as shown in fig. 1 may further include at least one of a hole transport layer 15, a hole injection layer 16, an electron transport layer 17, and an electron injection layer between the light emitting layer 14 and the corresponding electrode layer. For example, a hole transport layer 15 may be provided between the bottom electrode layer 12 and the light-emitting layer 14, and an electron transport layer 17 may be provided between the top electrode layer 13 and the light-emitting layer 14 in the above examples. A hole injection layer 16 may also be provided between the bottom electrode layer 12 and the hole transport layer 15. Understandably, an electron injection layer may also be provided between the top electrode layer 13 and the electron transport layer 17.
The invention also provides a manufacturing method of the organic light emitting diode 10, which comprises the following steps:
a bottom electrode layer 12, a light-emitting layer 14, and a top electrode layer 13 are formed on the substrate 11 in this order in the thickness direction, the light-emitting layer 14 includes an electron donor layer 141 and a triplet-triplet annihilation layer 142, and the electron donor layer 141 and the triplet-triplet annihilation layer 142 are stacked; an exciplex for emitting yellow light can be formed between the facing faces of the electron donor layer 141 and the triplet-triplet annihilation layer 142, the triplet-triplet annihilation layer 142 for emitting blue light, and T of the material of the triplet-triplet annihilation layer 142 1 Energy level < T of exciplex 1 Energy level.
In a specific example, the energy level difference between the HOMO level of the electron donor material in the electron donor layer 141 and the LUMO level of the material of the triplet-triplet annihilation layer 142 is between 2.2eV and 2.4eV.
In a specific example, the triplet-triplet annihilation layer 142 emits light at a wavelength of 460nm to 475nm.
The light emitting layer of the organic light emitting diode 10 prepared by the above method is composed of the exciplex light emission and the triplet-triplet annihilation layer 142 light emission, wherein the exciplex emits yellow light, and the triplet-triplet annihilation layer 142 emits blue light, which are complementary to each other, to constitute white light.
Further, in order to improve the problems of excessive yellow light component and insufficient blue light component in the emission spectrum of the organic light emitting diode 10 produced by the method of the above specific example, an interface layer 143 may be further provided between the electron donor layer 141 and the triplet-triplet annihilation layer 142. The interface layer 143 is thin, still forms exciplex to generate yellow light, and also generates triplet-triplet annihilation process, so that the triplet-triplet annihilation layer 142 generates blue light without loss of blue light.
Still further, the electron donor layer 141 may be further optimized as a mixed material layer formed by mixing the electron donor material with the material of the triplet-triplet annihilation layer 142 on the basis of the organic light emitting diode 10 prepared as the specific example described above. The mixed material layer can widen an exciton recombination zone, is favorable for reducing the efficiency roll-off of the device and improving the brightness.
The organic light emitting diode 10 in any of the above specific examples can be used in various types of light emitting display devices, for example, the present invention also provides a display device including a filter and the organic light emitting diode 10 in the above example, wherein the filter is located on the light emitting side of the organic light emitting diode 10. Compared with the organic light emitting diode structure connected by the R/G/B sub-light emitting units in a laminated manner in the prior art, the organic light emitting diode 10 has fewer layers and is simpler in manufacturing process.
The following are specific examples.
Example 1
(1) Taking a transparent conductive thin film ITO as a bottom electrode layer, wherein the thickness is 50nm;
(2) Deposition of MoO on ITO by evaporation 3 As a hole injection layer, 10nm thick;
(3) Depositing m-MTDATA on the hole injection layer by an evaporation method to form a hole transport layer with the thickness of 40nm;
(4) Depositing m-MTDATA on the hole transport layer by using an evaporation method to serve as an electron donor layer, wherein the thickness of the m-MTDATA is 15nm;
(5) Depositing MADN on the electron donor layer by evaporation method, wherein BCzVBi (3%) is used as a triplet-triplet annihilation layer with the thickness of 15nm, the MADN is a triplet-triplet annihilation material, and the BCzVBi is a fluorescent object;
(6) Depositing TPBi on the triplet-triplet annihilation layer by an evaporation method, wherein Liq is used as an electron transport layer and has the thickness of 30nm;
(7) And depositing Al on the electron transport layer by an evaporation method to serve as a top electrode layer, wherein the thickness of the Al is 100nm.
Example 2:
(1) Taking a transparent conductive film ITO as a bottom electrode layer, wherein the thickness is 50nm;
(2) Deposition of MoO on ITO by evaporation 3 As a hole injection layer, 10nm thick;
(3) Depositing m-MTDATA on the hole injection layer by using an evaporation method to serve as a hole transport layer, wherein the thickness of the hole transport layer is 40nm;
(4) Depositing m-MTDATA as an electron donor layer on the hole transport layer by using an evaporation method, wherein the thickness of the m-MTDATA is 15nm;
(5) Depositing 4PPIAN as an interface layer on the electron donor layer by using an evaporation method, wherein the thickness is 3nm;
(6) Depositing MADN on the interface layer by an evaporation method, wherein BCzVBi (3%) is used as a triplet-triplet annihilation layer with the thickness of 15nm, the MADN is a triplet-triplet annihilation material, and the BCzVBi is a fluorescent object;
(7) Depositing TPBi on the triplet-triplet annihilation layer by an evaporation method, wherein Liq is used as an electron transport layer and has the thickness of 30nm;
(8) And depositing Al on the electron transport layer by an evaporation method to serve as a top electrode layer, wherein the thickness of the Al is 100nm.
Example 3:
(1) Taking a transparent conductive film ITO as a bottom electrode layer, wherein the thickness is 50nm;
(2) Deposition of MoO on ITO by vapor deposition 3 As a hole injection layer, 10nm thick;
(3) Depositing m-MTDATA on the hole injection layer by using an evaporation method to serve as a hole transport layer, wherein the thickness of the hole transport layer is 35nm;
(4) Depositing m-MTDATA: MADN (molar ratio 7: 3) as a mixed layer on the hole transport layer by an evaporation method, wherein the thickness is 20nm;
(5) Depositing 4PPIAN on the mixed layer by using an evaporation method to serve as an interface layer, wherein the thickness is 3nm;
(6) Depositing MADN on the interface layer by an evaporation method, wherein BCzVBi (3%) is used as a triplet-triplet annihilation layer with the thickness of 15nm, the MADN is a triplet-triplet annihilation material, and the BCzVBi is a fluorescent object;
(7) Depositing TPBi on the triplet-triplet annihilation layer by an evaporation method, wherein Liq is used as an electron transport layer and has the thickness of 30nm;
(8) Al is deposited on the electron transport layer as a top electrode layer by using an evaporation method, and the thickness is 100nm.
The devices in embodiments 1 to 3 are tested by a special IVL test system to obtain performance parameters such as device current, brightness, color coordinates and the like, and the test results are as follows in table 1:
wherein, the color coordinate is @1000cd/m 2 : represents 1000cd/m 2 Color coordinates of the lower device; maximum luminance (cd/m) 2 ): representing the maximum brightness of the device.
TABLE 1
| Examples | Color coordinate @1000cd/m 2 | Maximum luminance (cd/m) 2 ) |
| Example 1 | 0.36,0.47 | 17000 |
| Example 2 | 0.33,0.35 | 13000 |
| Example 3 | 0.34,0.37 | 22000 |
As can be seen from table 1, in example 2, compared to example 1, after the interface layer was added between the electron donor layer and the triplet-triplet annihilation layer, data on both the x-axis and the y-axis of the color coordinates were reduced, indicating an increase in the blue light component. Example 3 compared to example 2, when the electron donor layer is a mixed material layer formed by mixing the electron donor material with the material of the triplet-triplet annihilation layer 142, the luminance is significantly enhanced.
All possible combinations of the technical features in the above embodiments may not be described for the sake of brevity, but should be considered as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above examples only show several embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the invention. It should be noted that various changes and modifications can be made by those skilled in the art without departing from the spirit of the invention, and these changes and modifications are all within the scope of the invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (12)
1. The organic light emitting diode comprises a bottom electrode layer,A top electrode layer and a light emitting layer disposed between the bottom electrode layer and the top electrode layer; the light-emitting layer includes an electron donor layer and a triplet-triplet annihilation layer, the electron donor layer and the triplet-triplet annihilation layer being disposed in a stack; an exciplex for emitting yellow light can be formed between the facing faces of the electron donor layer and the triplet-triplet annihilation layer for emitting blue light, the triplet-triplet annihilation layer being of a material of which T 1 Energy level < T of the exciplex 1 Energy level.
2. The organic light-emitting diode of claim 1, wherein the energy level difference between the HOMO level of the electron donor material in the electron donor layer and the LUMO level of the material of the triplet-triplet annihilation layer is in the range of 2.2eV to 2.4eV.
3. The organic light-emitting diode according to claim 1, wherein the triplet-triplet annihilation layer emits light at a wavelength of 460nm to 475nm, and the organic light-emitting diode is a white light-emitting organic light-emitting diode.
4. The organic light-emitting diode of claim 1, wherein the electron donor layer has a thickness of 10nm to 50nm, and the triplet-triplet annihilation layer has a thickness of 10nm to 30nm.
5. The organic light-emitting diode according to any one of claims 1 to 4, wherein the light-emitting layer further comprises an interface layer disposed between the electron donor layer and the triplet-triplet annihilation layer.
6. The OLED of claim 5, wherein T of the material of the triplet-triplet annihilation layer 1 Energy level < T of the material of the interface layer 1 Energy level < T of the exciplex 1 Energy level, and S of the material of the interface layer 1 Energy level > S of the material of the triplet-triplet annihilation layer 1 Energy level.
7. The OLED as claimed in claim 5, wherein the thickness of the electron donor layer is 10nm to 50nm, the thickness of the interface layer is 3nm to 5nm, and the thickness of the triplet-triplet annihilation layer is 10nm to 20nm.
8. The organic light-emitting diode according to any one of claims 1 to 4 and 6 to 7, wherein the electron donor layer is a mixed material layer formed by mixing an electron donor material with a material of the triplet-triplet annihilation layer.
9. The organic light-emitting diode according to claim 8, wherein the molar ratio of the electron donor material to the material of the triplet-triplet annihilation layer in the mixed material layer is from 9 to 6.
10. The organic light-emitting diode according to any one of claims 1 to 4, 6 to 7 and 9, further comprising at least one of a hole transport layer, a hole injection layer, an electron transport layer and an electron injection layer between the light-emitting layer and the corresponding electrode layer.
11. A manufacturing method of an organic light emitting diode is characterized by comprising the following steps:
sequentially forming a bottom electrode layer, a light-emitting layer and a top electrode layer which are stacked in a thickness direction on a substrate, wherein the light-emitting layer comprises an electron donor layer and a triplet-triplet annihilation layer, and the electron donor layer and the triplet-triplet annihilation layer are stacked; an exciplex for emitting yellow light can be formed between the facing faces of the electron donor layer and the triplet-triplet annihilation layer for emitting blue light, the T of the material of the triplet-triplet annihilation layer 1 Energy level < T of the exciplex 1 Energy level.
12. A display device comprising a filter and the organic light emitting diode according to any one of claims 1 to 10, wherein the filter is located on a light emitting side of the organic light emitting diode.
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