CN115377253A - Preparation method of light trapping structure and light trapping structure - Google Patents
Preparation method of light trapping structure and light trapping structure Download PDFInfo
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- CN115377253A CN115377253A CN202211315164.4A CN202211315164A CN115377253A CN 115377253 A CN115377253 A CN 115377253A CN 202211315164 A CN202211315164 A CN 202211315164A CN 115377253 A CN115377253 A CN 115377253A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
Abstract
The disclosure relates to a preparation method of a light trapping structure and the light trapping structure, and relates to the technical field of semiconductors. The preparation method of the light trapping structure comprises the following steps: forming a light trapping structure window defining layer on a substrate; forming a polymer microsphere layer mask on the light trapping structure window defining layer; etching the light trapping structure window limiting layer through the polymer microsphere layer mask to form a light trapping structure window mask; after removing the polymer microsphere layer mask, forming an oxide layer mask in the area which is not covered with the light trapping structure window mask; after removing the light trapping structure window mask, etching the substrate through the oxide layer mask to form a light trapping structure; and removing the oxide layer mask. According to the manufacturing method, the photoetching technology is not needed in the process of manufacturing the light trapping structure, the manufacturing cost is low, various precision requirements can be met, and large-scale repeatable manufacturing of the light trapping structure can be realized.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, and in particular relates to a preparation method of a light trapping structure and the light trapping structure.
Background
The light trapping structure is a micro-nano structure positioned on the surface of the light emitting device, and has the function of dispersing incident light rays to each position in the light emitting device through multiple reflection and refraction, so that the optical path of light in the light emitting device is increased, and the absorption of the light in the light emitting device is improved. The light trapping structure mainly comprises an inverted pyramid light trapping structure, a grating light trapping structure and the like, wherein the inverted pyramid light trapping structure is widely applied due to the fact that the manufacturing method is simple and the surface defects are few. At present, wet etching is applied to the inverted pyramid-shaped light trapping structure, such as etching the crystal orientation silicon by using tetramethylammonium hydroxide.
However, the inverted pyramid light trapping structure is obtained by first obtaining a light trapping window by using photolithography, and then preparing the light trapping window by using wet etching. The interval between the two light trapping structures is small and is only 50-100nm wide, so that the requirement on the photoetching precision is high. The precision of the photoetching machine used in most laboratories in China at present is between 0.5 and 1 micron, and the precision of the space between the light trapping structures can not be achieved. If higher precision electron beam exposure is used, the time cost and the process cost greatly increase.
Disclosure of Invention
In order to solve the technical problems, the disclosure provides a preparation method of a light trapping structure and the light trapping structure, a photoetching technology is not needed in the process of manufacturing the light trapping structure, the manufacturing cost is low, various precision requirements can be met, and large-scale repeatable preparation of the light trapping structure can be realized.
In a first aspect, the present disclosure provides a method for manufacturing a light trapping structure, including:
forming a light trapping structure window defining layer on a substrate;
forming a polymer microsphere layer mask on the light trapping structure window defining layer;
etching the light trapping structure window limiting layer through the polymer microsphere layer mask to form a light trapping structure window mask;
after removing the polymer microsphere layer mask, forming an oxide layer mask in the area which is not covered with the light trapping structure window mask;
after removing the light trapping structure window mask, etching the substrate through the oxide layer mask to form a light trapping structure;
and removing the oxide layer mask.
Optionally, the forming a polymer microsphere layer mask on the light trapping structure window defining layer comprises:
forming a monolayer film of polymeric microspheres on the window defining layer of light trapping structures;
and etching the polymer microsphere single-layer film to enable the polymer microspheres in the polymer microsphere single-layer film to reach a target size, and forming a polymer microsphere layer mask.
Optionally, the etching the polymer microsphere single-layer film to make the polymer microspheres in the polymer microsphere single-layer film reach a target size, and the forming the polymer microsphere layer mask includes:
and isotropically etching the polymer microsphere single-layer film by adopting oxygen plasma to enable the polymer microspheres in the polymer microsphere single-layer film to reach a target size, and forming a polymer microsphere layer mask.
Optionally, after forming the light trapping structure window defining layer on the substrate, the method further includes:
and carrying out hydrophilic treatment on the light trapping structure window limiting layer.
Optionally, after removing the polymer microsphere layer mask, forming an oxide layer mask in a region not covered with the light trapping structure window mask includes:
and after removing the polymer microsphere layer mask, forming an oxide layer mask in the area which is not covered with the light trapping structure window mask through a thermal oxidation method.
Optionally, before the substrate is etched through the oxide layer mask to form the light trapping structure, the method includes:
and removing the oxide layer on the surface of the substrate.
Optionally, the polymer microsphere layer mask is a polystyrene microsphere mask.
Optionally, the substrate is a silicon substrate; the light trapping structure window limiting layer is a silicon nitride layer; the oxide layer mask is a silicon dioxide mask.
Optionally, after removing the light trapping structure window defining layer, etching the substrate through the oxide layer mask to form a light trapping structure includes:
and etching the substrate by adopting a tetramethyl ammonium hydroxide solution through the oxide layer mask to form a light trapping structure.
In a second aspect, the present disclosure also provides a light trapping structure formed by the method for manufacturing the light trapping structure according to the first aspect.
The preparation method of the light trapping structure provided by the disclosure comprises the following steps: forming a light trapping structure window defining layer on a substrate; forming a polymer microsphere layer mask on the light trapping structure window limiting layer; etching the light trapping structure window limiting layer through the polymer microsphere layer mask to form a light trapping structure window mask; after removing the polymer microsphere layer mask, forming an oxide layer mask in the area which is not covered with the light trapping structure window mask; after removing the light trapping structure window mask, etching the substrate through the oxide layer mask to form a light trapping structure; and removing the oxide layer mask. The polymer microsphere layer is used as a mask, the shape of the polymer microsphere layer mask is etched to the lower light trapping structure window limiting layer, so that a light trapping structure window mask is formed, the shape and the size of the light trapping structure window mask are the same as those of the polymer microsphere layer mask, then an oxide layer mask is formed at a place where the light trapping structure window mask is not formed, the light trapping structure window mask is removed, the obtained recess is the final position of the light trapping structure, and the shape and the size of the light trapping structure are the same as those of the recess, namely the shape and the size of the light trapping structure window mask are the same as those of the removed light trapping structure window mask. Therefore, the required size of the light trapping structure can be obtained without photolithography. According to the manufacturing method, the photoetching technology is not needed in the process of manufacturing the light trapping structure, the manufacturing cost is low, various precision requirements can be met, and large-scale repeatable manufacturing of the light trapping structure can be realized.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a schematic flow chart of a method for manufacturing a light trapping structure according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a substrate after a window defining layer of a light trapping structure is formed according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram illustrating a structure of a substrate after a mask layer of polymer microspheres is formed according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of a substrate structure for forming a light trapping structure window mask according to an embodiment of the present disclosure;
FIG. 5 is a schematic diagram of a substrate structure for forming an oxide mask according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram illustrating a substrate structure for forming a light trapping structure according to an embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of a light trapping structure according to an embodiment of the present disclosure;
fig. 8 is a schematic structural diagram of a mask for forming a polymer microsphere layer according to an embodiment of the disclosure.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced in other ways than those described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.
The embodiment of the present disclosure provides a method for manufacturing a light trapping structure, and fig. 1 is a schematic flow chart of the method for manufacturing a light trapping structure provided by the embodiment of the present disclosure, and as shown in fig. 1, the method for manufacturing a light trapping structure includes steps S100 to S600:
and S100, forming a light trapping structure window limiting layer on the substrate.
Before etching the substrate to obtain the light trapping structure, firstly forming a light trapping structure window defining layer on the substrate, wherein the size of the light trapping structure window is the size of the light trapping structure, and the distance between adjacent light trapping structure windows is the distance between adjacent light trapping structures. The light trapping structure window limiting layer needs to be high-temperature resistant and high in chemical stability, and the phenomenon that the shape of the light trapping structure window limiting layer is damaged and the size of a light trapping structure is influenced due to high-temperature operation in the process of preparing the light trapping structure is avoided. For example, fig. 2 is a schematic diagram of a substrate structure after forming a light trapping structure window defining layer according to an embodiment of the present disclosure, as shown in fig. 2, a substrate 1 may be a silicon substrate, the silicon substrate is a material commonly used for currently preparing a light trapping structure, a material of the light trapping structure window defining layer 2 is silicon nitride, and a silicon nitride film layer grows on the silicon substrate. The silicon nitride is high temperature resistant and stable in chemical property, and meets the requirements of the light trapping structure window limiting layer.
It should be noted that, in the embodiments of the present disclosure, a material for forming the substrate is not limited, and a material for forming the light trapping structure window defining layer is also not limited, and the embodiments are only illustrated, and other materials capable of meeting the preparation requirement may also be selected.
And S200, forming a polymer microsphere layer mask on the light trapping structure window limiting layer.
The polymer microsphere layer mask is usually prepared by polymerizing organic polymers, such as polystyrene microspheres or acrylic microspheres, and other polymer microspheres can be selected. Fig. 3 is a schematic structural diagram of a substrate after forming a polymer microsphere layer mask according to an embodiment of the present disclosure, as shown in fig. 3, the polymer microsphere layer mask 3 is located above the light trapping structure window defining layer 2, the polymer microsphere layer mask 3 is made of a plurality of individual particles, and an ordered arrangement of masks is formed, wherein there is a space between adjacent polymer microspheres, and the polymer microsphere layer mask 3 can cover a part of the light trapping structure window defining layer 2.
S300, etching the light trapping structure window limiting layer through the polymer microsphere layer mask to form a light trapping structure window mask.
The polymer microsphere layer mask is positioned above the light trapping structure window limiting layer, the part, which is not covered by the polymer microsphere layer mask, in the light trapping structure window limiting layer is etched until the substrate is exposed, because the polymer microsphere layer mask is used as a template in the etching process, the light trapping structure window limiting layer forms the light trapping structure window mask after the etching is finished, and the shape of the polymer microsphere layer mask is the same as that of the polymer microsphere layer mask. Fig. 4 is a schematic structural diagram of a substrate for forming a light trapping structure window mask according to an embodiment of the present disclosure, as shown in fig. 4, a polymer microsphere layer mask 3 is located above a light trapping structure window mask 21, the light trapping structure window mask 21 is a plurality of separate masks, a distance between adjacent light trapping structure window masks is the same as a distance between adjacent polymer microsphere layer masks, and a size of the light trapping structure window mask 21 is the same as a size of an upper surface opening of a light trapping structure.
S400, after removing the polymer microsphere layer mask, forming an oxide layer mask in the area which is not covered with the light trapping structure window mask.
After the light trapping structure window mask is obtained through etching, the polymer microsphere layer mask is removed, only the substrate and the light trapping structure window mask above the substrate exist at the moment, the size of the polymer microspheres is also transferred to the light trapping structure window mask, and the light trapping structure is convenient to obtain through subsequent etching due to the stable chemical property of the light trapping structure window mask.
In order to obtain the light trapping structure through etching, an oxide film needs to be formed in an area which is not covered with a light trapping structure window mask, so that the damage to other parts of the substrate during subsequent etching of the light trapping structure is avoided, the thickness of the oxide film is basically the same as that of the light trapping structure window mask, the oxide film is too thick, materials are wasted, and the oxide film cannot play a role in protection because the oxide film is too thin, so that the thickness of the oxide film can be 80 to 100nm, and the thickness of the light trapping structure window mask can be 80 to 120nm. Fig. 5 is a schematic structural diagram of a substrate for forming an oxide layer mask according to an embodiment of the present disclosure, in which the oxide layer mask 4 in fig. 5 is made of silicon oxide, and the polymer microsphere layer mask on the light trapping structure window mask 21 is removed, which is not shown in the figure, first, the light trapping structure window mask 21 is only present on the substrate 1, and there is a gap between the light trapping structure window masks 21 arranged in an ordered manner, so that the oxide layer mask 4 is formed on a region of the substrate 1 not covered by the light trapping structure window mask 21.
S500, after the light trapping structure window mask is removed, the substrate is etched through the oxide layer mask to form a light trapping structure.
After an oxide layer mask is formed, the light trapping structure window mask is removed, a substrate below the light trapping structure window mask is exposed, the substrate is etched through the oxide film mask on the basis, the part, exposed out of the substrate, of the substrate is the position of the final light trapping structure, the position covered with the oxide layer mask keeps the original shape, etching is not needed, and the substrate below the oxide film mask cannot be damaged. And the dimension of the light trapping structure is the dimension of the position where the oxide layer mask is removed, and the light trapping structure is formed by downward etching. Fig. 6 is a schematic diagram of a substrate structure for forming a light trapping structure according to an embodiment of the present disclosure, and as shown in fig. 6, a window mask of an original light trapping structure is removed, a part of the substrate is exposed, and the substrate 1 is etched through a formed oxide layer mask 4 to form a light trapping structure 5 in an inverted pyramid shape.
S600, removing the oxide layer mask.
And an oxide layer mask is also arranged above the etched substrate and is removed. The oxide layer mask may be etched by diluting the oxide etchant. Fig. 7 is a schematic structural diagram of a light trapping structure according to an embodiment of the present disclosure, as shown in fig. 7, after removing an oxide film mask, only the substrate 1 remains, the substrate 1 includes a plurality of light trapping structures 5 with inverted pyramid structures, and the size of the light trapping structures 5 can also meet the required requirements.
According to the embodiment of the disclosure, the polymer microsphere layer is used as a mask, the shape of the polymer microsphere layer mask is etched to the lower light trapping structure window limiting layer, so that the light trapping structure window mask is formed, the shape and the size of the light trapping structure window mask are the same as those of the polymer microsphere layer mask, then an oxide layer mask is formed at a place where the light trapping structure window mask is not formed, the light trapping structure window mask is removed, the obtained depression is the final position of the light trapping structure, and the shape and the size of the light trapping structure are the same as those of the removed light trapping structure window mask. Therefore, the required size of the light trapping structure can be obtained without photolithography. According to the manufacturing method, the photoetching technology is not needed in the process of manufacturing the light trapping structure, the manufacturing cost is low, various precision requirements can be met, and large-scale repeatable manufacturing of the light trapping structure can be realized.
It should be noted that the light trapping structures prepared in the embodiments of the present disclosure are not limited to the shape of the inverted pyramid, and may be in other shapes, but the distance between adjacent light trapping structures and the size formation process of the light trapping structures may adopt the above preparation method.
In some embodiments, forming a polymer microsphere layer mask on the light trapping structure window defining layer comprises:
and S210, forming a single-layer film of the polymer microspheres on the light trapping structure window limiting layer.
S220, etching the polymer microsphere single-layer film to enable the polymer microspheres in the polymer microsphere single-layer film to reach the target size, and forming a polymer microsphere layer mask.
Specifically, before a polymer microsphere layer mask is formed on a light trapping structure window limiting layer, a polymer microsphere solution is prepared, and the manufactured light trapping structure belongs to a micro-nano structure, so that microspheres in the polymer microsphere solution are nano microspheres or micro microspheres, the processing of the micro-nano structure is realized, and the polymer microspheres are generally formed by polymerizing organic high molecules, such as polystyrene microspheres or acrylic acid-based microspheres, and can also be prepared by selecting other polymer microspheres.
After the polymer microsphere solution is prepared, the polymer microsphere solution needs to be transferred to the upper part of the light trapping structure window limiting layer, the polymer microsphere solution can float on the water surface to form a polymer microsphere layer, and the polymer microsphere layer can be directly transferred to the light trapping structure window limiting layer to form a polymer microsphere single-layer film; or, the polymer microsphere solution can be directly coated above the light trapping structure window limiting layer by adopting a spin coating method, and the polymer microspheres are formed into a film in the coating process to form a polymer microsphere single-layer film.
The polymer microsphere single-layer film is formed by a plurality of orderly arranged polymer microspheres, the sizes of the polymer microspheres are easy to change, the polymer microsphere layer masks with different sizes can be obtained by changing the sizes of the polymer microspheres, the size of the light trapping structure is the same as that of the polymer microspheres, and the size of the light trapping structure is obtained by only adjusting the sizes of the polymer microspheres. The required size of the light trapping structure can be obtained without photoetching, the manufacturing cost is low, various precision requirements can be met, and large-scale repeatable preparation of the light trapping structure can be realized. Fig. 8 is a schematic structural diagram of a mask for forming a polymer microsphere layer according to an embodiment of the present disclosure, as shown in fig. 8, an upper diagram in fig. 8 includes a substrate 1, a light trapping structure window defining layer 2, and a polymer microsphere single-layer film 31, and the polymer microsphere single-layer film 31 is etched to obtain a polymer microsphere layer mask 3 with a reduced size, by which a desired precision of a light trapping structure can be selected.
In some embodiments, etching the polymeric microsphere monolayer film to bring the polymeric microspheres in the polymeric microsphere monolayer film to a target size, forming the polymeric microsphere layer mask comprises:
and isotropically etching the polymer microsphere single-layer film by adopting oxygen plasma to enable the polymer microspheres in the polymer microsphere single-layer film to reach a target size, and forming a polymer microsphere layer mask.
The shape of the monolayer film of the polymer microspheres is easy to change, for example, the polymer microspheres are etched by the oxygen reverse plasma, and the size of the polymer microspheres can be changed. And etching the polymer microspheres by selecting oxygen plasma, wherein the polymer microspheres are macromolecular oxides and can reduce the size by reacting with oxygen, so that the size of the polymer microspheres can be adjusted to enable the polymer microspheres in the polymer microsphere single-layer film to reach the target size, and a polymer microsphere layer mask is formed. When the polymer microspheres are etched by using the oxygen plasma, the etching can be completed by the oxygen plasma, after oxygen is introduced into the device, voltage is applied to change the oxygen into the oxygen plasma for etching, wherein the etching speed is influenced by the etching time, the gas flow and the working power during etching, so that the size of the polymer microspheres can be adjusted by controlling the parameters, for example, the gas flow is controlled to be 20 to 200sccm, the etching power is controlled to be 50 to 150W, and at the moment, the etching time can be changed to enable the polymer microspheres to reach the required size.
In some embodiments, after forming the light trapping structure window defining layer on the substrate, the method further comprises:
and S110, carrying out hydrophilic treatment on the light trapping structure window limiting layer.
And hydrophilic treatment is carried out on the light trapping structure window limiting layer above the substrate, so that a film can be formed in time if aqueous solution exists above the light trapping structure window limiting layer. The hydrophilic treatment can be completed by oxygen plasma, and after oxygen is introduced into the device, voltage is applied to change the oxygen into oxygen plasma to bombard the surface of the light trapping structure window limiting layer so as to complete the hydrophilic treatment. Or carrying out hydrophilic treatment on the light trapping structure by adopting a solution, for example, mixing sulfuric acid and hydrogen peroxide, and cleaning the light trapping structure window limiting layer to finish the hydrophilic treatment.
It should be noted that, the embodiment of the present disclosure does not limit the specific operation of the hydrophilic treatment, and the related parameters and solution ratios involved in the hydrophilic treatment process can be selected according to actual requirements, and are not described again.
In some embodiments, after removing the polymer microsphere layer mask, forming an oxide layer mask in the region not covered by the light trapping structure window mask comprises:
and after removing the polymer microsphere layer mask, forming an oxide layer mask in the area which is not covered with the light trapping structure window mask by a thermal oxidation method.
The polymer microsphere layer mask can be removed by sequentially cleaning the polymer microsphere layer mask through an aqueous solution, an acetone solution and an ethanol solution under an ultrasonic environment, and finally, the residual residues are cleaned through the aqueous solution. And in order to protect the substrate, an oxide layer mask is formed in the area which is not covered by the light trapping structure window mask, so that the damage of the area which does not need to etch the light trapping structure in the etching process is avoided, the oxide layer mask can be formed by a thermal oxidation method through heating and oxidation, and the operation is convenient. For example, if the substrate is a silicon substrate, then thermal oxidation forms a silicon dioxide mask covering the remaining silicon substrate, which may be made of other materials.
In some embodiments, before the forming the light trapping structure by etching the substrate through the oxide layer mask, the method includes:
and removing the oxide layer on the surface of the substrate.
Because the base can react with oxygen under natural environment, produces corresponding oxide layer, and the position of etching light trapping structure window mask can expose the base, and the base of here meets oxygen and will produce the oxide layer, and the existence of oxide layer can cause the influence to the process of sculpture light trapping structure, increases the sculpture degree of difficulty, consequently, needs to get rid of this part oxide layer of natural formation, and the direct etching base of being convenient for reduces the sculpture degree of difficulty. When the oxide layer on the surface of the substrate is removed, diluted oxide etching liquid may be used for etching, and other methods may also be used to complete the step, which is not limited in the present disclosure.
In some embodiments, the polymeric microsphere layer mask is a polystyrene microsphere mask.
The polymer microsphere layer mask can be a polystyrene mask, the polystyrene microspheres are high molecular oxides, and the polystyrene microspheres have the advantages of good relative stability, strong hydrophobicity, low adhesion, low production cost and convenience in preparation. The monodispersity of the polystyrene microspheres is strong, a plurality of polystyrene microsphere masks which are arranged independently can be easily obtained by etching the polystyrene microspheres, the light trapping structure is also an independently arranged structure, and the required light trapping structure can be correspondingly obtained by adjusting the polystyrene microsphere masks.
In some embodiments, the substrate is a silicon substrate, the light trapping structure window defining layer is a silicon nitride layer, and the oxide layer mask is a silicon dioxide mask.
The substrate can be a silicon substrate which is mainly used for manufacturing semiconductor materials, silicon is used as the substrate, the light trapping structure window limiting layer can be a silicon nitride layer, nitrogen and silicon can react to prepare the light trapping structure window limiting layer, a silicon dioxide insulating layer can be formed by heating the silicon, and the silicon dioxide layer can be a silicon dioxide mask. The silicon substrate is selected, has mature manufacturing process and abundant reserves, is also an insulator, is beneficial to the preparation of the current semiconductor material, and can be applied to various photoelectric fields. It should be noted that, in the embodiments of the present disclosure, there is no limitation on the specific types of the substrate, the light trapping structure window defining layer, and the oxide layer mask, and the substrate can be used to prepare the light trapping structure, and the light trapping structure window defining layer has stable chemical properties.
In some embodiments, after removing the light trapping structure window defining layer, the forming of the light trapping structure by etching the substrate through the oxide layer mask comprises:
and etching the substrate by adopting a tetramethyl ammonium hydroxide solution through an oxide layer mask to form a light trapping structure.
The size of the light trapping structure is selected, the position of the substrate which is not covered by the oxide layer mask, namely the position of the light trapping structure, is continuously etched downwards to obtain the complete light trapping structure, a tetramethylammonium hydroxide solution can be adopted during etching, the mass fraction of the tetramethylammonium hydroxide solution is 25%, and the inverted pyramid-shaped light trapping structure is formed.
The embodiment of the disclosure further provides a light trapping structure, which is formed by the preparation method of the light trapping structure according to any of the above embodiments. The light trapping structure formed by the preparation method of the light trapping structure provided by the embodiment of the disclosure can obtain the required size of the light trapping structure without photoetching, has low manufacturing cost, can meet various precision requirements, and can realize large-scale repeatable preparation of the light trapping structure.
Illustratively, silicon nitride is grown on a silicon wafer, and then the silicon nitride is subjected to hydrophilic treatment using oxygen plasma; transferring the polystyrene microsphere single-layer film onto silicon nitride; isotropically etching the polystyrene microspheres to a light trapping size by using oxygen plasma; using the reduced polystyrene microspheres as a mask, and anisotropically etching the silicon nitride; removing the polystyrene microspheres; growing a layer of silicon dioxide at the position where the silicon nitride is etched away by using a thermal oxidation method; removing the remaining silicon nitride using hot phosphoric acid; etching a natural oxide layer on the surface of the silicon by using diluted oxide etching liquid, and then etching the silicon by using a tetramethyl ammonium hydroxide solution to obtain an etched light trapping structure; the silicon dioxide mask grown by the thermal oxidation method is etched by using diluted oxide etching liquid. The size of the etched polystyrene microsphere is changed by controlling the time for etching the polystyrene microsphere, so that the size of the light trapping structure is controlled. The spacing between the light trapping structures can be controlled by changing the original size of the polystyrene microspheres. For example, a 600nm light trapping structure and a 100nm spacing can be obtained by etching 700nm polystyrene microspheres to 600nm, and therefore, a light trapping structure with the required precision can be obtained.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
The previous description is only for the purpose of describing particular embodiments of the present disclosure, so as to enable those skilled in the art to understand or implement the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method for preparing a light trapping structure is characterized by comprising the following steps:
forming a light trapping structure window defining layer on a substrate;
forming a polymer microsphere layer mask on the light trapping structure window defining layer;
etching the light trapping structure window limiting layer through the polymer microsphere layer mask to form a light trapping structure window mask;
after removing the polymer microsphere layer mask, forming an oxide layer mask in the area which is not covered with the light trapping structure window mask;
after removing the light trapping structure window mask, etching the substrate through the oxide layer mask to form a light trapping structure;
and removing the oxide layer mask.
2. The method of claim 1, wherein the step of forming a polymer microsphere layer mask on the window defining layer of the light trapping structure comprises:
forming a monolayer film of polymeric microspheres on the window defining layer of light trapping structures;
and etching the polymer microsphere single-layer film to enable the polymer microspheres in the polymer microsphere single-layer film to reach a target size, and forming a polymer microsphere layer mask.
3. The method of claim 2, wherein the etching the polymer microsphere monolayer film to achieve a target size of the polymer microspheres in the polymer microsphere monolayer film and forming the polymer microsphere layer mask comprises:
and isotropically etching the polymer microsphere single-layer film by adopting oxygen plasma to enable the polymer microspheres in the polymer microsphere single-layer film to reach a target size, and forming a polymer microsphere layer mask.
4. The method for preparing a light trapping structure according to claim 1, wherein after forming a window defining layer of the light trapping structure on a substrate, further comprising:
and carrying out hydrophilic treatment on the light trapping structure window limiting layer.
5. The method for preparing a light trapping structure according to claim 1, wherein the step of forming an oxide layer mask in a region uncovered by the light trapping structure window mask after removing the polymer microsphere layer mask comprises:
and after removing the polymer microsphere layer mask, forming an oxide layer mask in the area which is not covered with the light trapping structure window mask by a thermal oxidation method.
6. The method for preparing the light trapping structure according to claim 1, wherein before the step of etching the substrate through the oxide layer mask to form the light trapping structure, the method comprises the following steps:
and removing the oxide layer on the surface of the substrate.
7. The method of claim 1, wherein the polymer microsphere layer mask is a polystyrene microsphere mask.
8. The method of claim 1, wherein the substrate is a silicon substrate; the light trapping structure window limiting layer is a silicon nitride layer; the oxide layer mask is a silicon dioxide mask.
9. The method for preparing a light trapping structure according to claim 8, wherein the step of etching the substrate through the oxide layer mask to form a light trapping structure after removing the light trapping structure window defining layer comprises:
and etching the substrate by adopting a tetramethyl ammonium hydroxide solution through the oxide layer mask to form a light trapping structure.
10. A light trapping structure formed by the method of any one of claims 1-9.
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