CN115376969A - Radio frequency impedance matching method and system and semiconductor process equipment - Google Patents
Radio frequency impedance matching method and system and semiconductor process equipment Download PDFInfo
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Abstract
The embodiment of the application provides a radio frequency impedance matching method and system and semiconductor process equipment. The radio frequency impedance matching method is used for realizing the glow starting of a process chamber of semiconductor process equipment through a radio frequency power supply and a matcher, and comprises the following steps: acquiring matching parameters and initial sweep frequency parameters in a process formula; controlling the parameters of the capacitor assembly in the matcher as matching parameters; and controlling the radio frequency power supply to start automatic frequency sweeping by using the initial frequency sweeping parameters, and enabling the impedance of the radio frequency power supply to be equal to the impedance of the matcher and the impedance of the process chamber so as to enable the process chamber to glow. According to the embodiment of the application, the radio frequency power supply can be called from the optimal initial sweep frequency parameter to realize the rapid glow starting and matching of the process chamber, so that the glow starting efficiency of the process chamber can be greatly improved, the occurrence of failure in glow starting matching can be avoided, the repeatability and stability of glow starting and matching are further ensured, and the consistency of process results is greatly improved.
Description
Technical Field
The present application relates to the field of semiconductor processing technologies, and in particular, to a radio frequency impedance matching method and system, and a semiconductor processing device.
Background
At present, plasma is widely used in the production process of semiconductor devices. In a plasma etching system, a radio frequency power supply transmits radio frequency energy to a process chamber through a matcher, the radio frequency energy excites gas with certain pressure in the process chamber into plasma, the excited plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles interact with a wafer which is placed in a process chamber and exposed in the plasma environment, so that various physical and chemical reactions occur on the surface of a wafer material, the surface performance of the material is changed, and the etching of the wafer or other process processes is completed.
In the process of transmitting the radio frequency energy, because the output impedance of the radio frequency power supply is generally 50 ohms, and the input impedance of the process chamber is generally a non-50 ohm impedance value with real part impedance and imaginary part impedance, when the energy is directly transmitted to the process chamber, because the impedance of the transmission path is not matched, the reflection of the radio frequency energy occurs, and the plasma cannot be normally excited in the process chamber, a matcher needs to be inserted between the radio frequency power supply and the process chamber, so that the input impedance at the rear end of the radio frequency power supply is 50 ohms, and the normal transmission of the energy is facilitated. However, when the matcher is used for matching in the prior art, since the radio frequency power supply is always a fixed frequency parameter of 13.56MHz, the matcher is completely relied on for starting and matching, so that the whole matching process needs 0.5s or more, and the purpose of quick matching cannot be realized. When the radio frequency power supply frequency sweeping mode is used for starting and matching, the matcher is completely in a fixed mode for a period of time at least in a frequency sweeping period, and the frequency stability range is large, and difference and non-repeatability exist at the moment. Furthermore, due to the plasma characteristics, there are regions with unstable starting in some frequency point regions, and when entering these specific regions, the starting and matching time will be correspondingly prolonged, and even the rf power source cannot jump out of the region, thereby resulting in the failure of starting matching.
Disclosure of Invention
The application provides a radio frequency impedance matching method and system and semiconductor process equipment aiming at the defects of the prior art, and aims to solve the technical problems that the prior art cannot be started quickly and the starting matching fails.
In a first aspect, an embodiment of the present application provides a radio frequency impedance matching method for achieving process chamber glow of semiconductor processing equipment by using a radio frequency power supply and a matcher, including: acquiring a matching parameter and an initial frequency sweeping parameter in a process formula, wherein the initial frequency sweeping parameter is the initial frequency of starting automatic frequency sweeping of a radio frequency power supply; controlling the parameters of the capacitor assembly in the matcher as the matching parameters; and controlling a radio frequency power supply to start automatic frequency sweeping by using the initial frequency sweeping parameters, and enabling the impedance of the radio frequency power supply to be equal to the impedance of the matcher and the impedance of the process chamber so as to start the process chamber.
In an embodiment of the present application, before the obtaining the matching parameters and the initial sweep frequency parameters in the process recipe, the method further includes: querying the matching parameters and the initial sweep frequency parameters in the process recipe; and if the matching parameters and the initial frequency sweeping parameters are inquired in the process formula, acquiring the matching parameters and the initial frequency sweeping parameters.
In an embodiment of the present application, the matching parameters and the initial sweep parameters are determined if the matching parameters and the initial sweep parameters are not queried in the process recipe.
In an embodiment of the present application, the determining the matching parameter includes: controlling parameters of a capacitor component in the matcher to be preset parameters; under the condition that the radio frequency power supply is the fixed frequency parameter, controlling the matcher to obtain the first capacitance parameter and the second capacitance parameter during matching according to a matching algorithm; and recording the first capacitance parameter and the second capacitance parameter as matching parameters, and storing the matching parameters into the process formula.
In an embodiment of the present application, the determining the initial frequency sweep parameter includes: controlling the radio frequency power supply to be a fixed frequency parameter; setting parameters of a capacitor component in the matcher to be the first capacitance parameter and the second capacitance parameter under the condition that the matcher is in a manual mode; enabling the process chamber to glow in a stepping mode through the second capacitance parameter according to a preset proportion to obtain a third capacitance parameter; and recording the first capacitance parameter and the third capacitance parameter as glow starting parameters, and storing the glow starting parameters into the process formula.
In an embodiment of the present application, the initial frequency sweep parameter is determined according to the matching parameter, the fixed frequency parameter, and the glow starting parameter.
In an embodiment of the present application, it is determined that the initial sweep frequency parameters need to satisfy the following formula:
2πf 0 *C2b＝2πf 1 *C2a
f 1 ＝f 0 *C2b/C2a
wherein f0 is characterized as the fixed frequency parameter, f1 is characterized as the initial frequency sweep parameter, C2a is characterized as the second capacitance parameter, and C2b is characterized as the third capacitance parameter.
In an embodiment of the present application, the fixed frequency parameter is 400KHz, 2MHz, 13.56MHz, or 40MHz.
In a second aspect, an embodiment of the present application provides a radio frequency impedance matching system, including: the device comprises a control device, a matcher and a radio frequency power supply; the control device is electrically connected with the matcher and the radio frequency power supply and is used for acquiring matching parameters and initial frequency sweeping parameters in a process formula; and controlling the parameter of the capacitor component in the matcher as the matching parameter; and controlling the radio frequency power supply to start automatic frequency sweeping by using the initial frequency sweeping parameters, so that the impedance of the radio frequency power supply is equal to the impedance of the matcher and the impedance of the process chamber, and the process chamber is ignited.
In a third aspect, an embodiment of the present application provides a semiconductor processing apparatus, including: a process chamber and an rf impedance matching system for performing the rf impedance matching method as provided in the first aspect.
The technical scheme provided by the embodiment of the application has the following beneficial technical effects:
according to the embodiment of the application, the matching parameters of the matcher and the initial frequency sweeping parameters of the radio frequency power supply are preset in the process formula, so that the matcher does not need to be automatically matched, and the radio frequency power supply can be called from the optimal initial frequency sweeping parameters to realize the rapid glow starting and matching of the process chamber, and therefore the glow starting efficiency of the process chamber can be greatly improved, the occurrence of the failure of glow starting matching can be avoided, the repeatability and stability of glow starting and matching can be further ensured, and the consistency of process results can be greatly improved.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic flowchart of a radio frequency impedance matching method according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of an rf impedance matching system according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram illustrating an effect of a change in a capacitor component of a matching device on an impedance according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram illustrating a process of implementing glow starting and matching by the radio frequency impedance matching method according to the embodiment of the present application;
fig. 5 is a schematic diagram of frequency variation in a radio frequency impedance method in the prior art.
Detailed Description
Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the accompanying drawings are exemplary only for explaining the present application and are not construed as limiting the present application.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
In the matching process of the prior art, a process of Plasma ignition and then matching exists, particularly for an Inductively Coupled Plasma (ICP) technology, an E-H mode jump exists in the Plasma ignition process, that is, capacitive Coupled discharge (CCP) is often accompanied in the ICP discharge process, and as input power starts to be fed into Plasma, the Plasma is excited and starts to work in an E mode state, and at this time, the whole discharge is mainly maintained by an axial electric field generated by a potential difference between two ends of a coil. As the input power is increased continuously until a certain threshold value is exceeded, the state of the plasma suddenly jumps into an H mode, the discharge is mainly maintained by a toroidal electric field generated by the Faraday effect, and the jump of the E-H mode is mainly caused by the nonlinearity of the absorbed power of the plasma. When the matcher is used for matching, because the radio frequency power supply is always in a fixed frequency parameter of 13.56MHz, the matcher is completely relied on for glow starting and matching, so that the whole matching process needs 0.5s or more, and the aim of quick matching cannot be fulfilled. When the radio frequency power supply frequency sweeping mode is used for starting and matching, the matcher is completely in a fixed mode for a period of time at least in a frequency sweeping period, and the frequency stability range is large, and difference and non-repeatability exist at the moment. As shown in fig. 5, different starting and matching frequency points occur when the rf power is swept under a certain process condition, so that the reflected power is reduced, and for example, at frequency points of 13.1MHz and 13.6MHz, different matching frequency points also have a certain influence on the process result. Furthermore, due to the plasma characteristics, there may exist a region with unstable ignition in some frequency point regions, such as the 13.4MHz to 13.5MHz region shown in fig. 5, when entering these specific regions, the ignition and matching time will be correspondingly lengthened, and even the rf power source cannot jump out of the region, thereby resulting in the failure of ignition and matching.
The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments.
An embodiment of the present application provides a radio frequency impedance matching method, which is used for realizing glow starting of a process chamber of semiconductor process equipment through a radio frequency power supply and a matcher, and a flow schematic diagram of the method is shown in fig. 1, and the method includes:
s1: acquiring a matching parameter and an initial frequency sweep parameter in a process formula, wherein the initial frequency sweep parameter is the initial frequency of starting automatic frequency sweep of a radio frequency power supply;
s2: controlling the parameters of the capacitor assembly in the matcher as matching parameters;
s3: and controlling the radio frequency power supply to start automatic frequency sweeping by using the initial frequency sweeping parameters, and enabling the impedance of the radio frequency power supply to be equal to the impedance of the matcher and the impedance of the process chamber so as to enable the process chamber to glow.
As shown in fig. 2 to fig. 3, the embodiment of the present application is mainly applied to a process chamber 100 of a semiconductor processing apparatus, and is used to realize rapid ignition and matching of the process chamber 100, so that plasma in the process chamber 100 is rapidly ignited and prevented from entering an unstable plasma region, thereby realizing stable repeatability in a process matching process. Specifically, before starting to execute the process, a control device (not shown in the figure) may obtain the matching parameters and the initial sweep frequency parameters from the process recipe, where the control device may be, for example, a lower computer, a single chip microcomputer, or a lower computer of the semiconductor process equipment, and may be used to store the process recipe of the current process, but the embodiment of the present application is not limited thereto. The control device may set the parameter of the capacitor assembly 21 in the matcher 2 as the matching parameter, or may manually set the parameter of the capacitor assembly 21 in the matcher 2 as the matching parameter, and therefore the embodiment of the present application is not limited thereto. The control device can control the radio frequency power supply 1 to start executing automatic frequency sweeping according to the initial frequency sweeping parameter, namely the initial frequency sweeping parameter is the initial frequency of the radio frequency power supply 1 starting automatic frequency sweeping, after the radio frequency power supply 1 starts loading radio frequency power, because the matcher 2 is set as a matching parameter at the moment, the fast glow starting can be realized, and the radio frequency power supply 1 can also be rapidly adjusted to a fixed frequency parameter after the fast glow starting, so that the fast glow starting and the matching of the process chamber 100 can be realized.
According to the embodiment of the application, the matching parameters of the matcher and the initial frequency sweeping parameters of the radio frequency power supply are preset in the process formula, so that the matcher does not need to be automatically matched, and the radio frequency power supply can be called from the optimal initial frequency sweeping parameters to realize the rapid glow starting and matching of the process chamber, and therefore the glow starting efficiency of the process chamber can be greatly improved, the occurrence of the failure of glow starting matching can be avoided, the repeatability and stability of glow starting and matching can be further ensured, and the consistency of process results can be greatly improved.
In an embodiment of the present application, as shown in fig. 1, before obtaining the matching parameters and the initial sweep frequency parameters in the process recipe, the method further includes: inquiring matching parameters and initial sweep frequency parameters in the process formula; and if the matching parameters and the initial frequency sweeping parameters are inquired in the process formula, acquiring the matching parameters and the initial frequency sweeping parameters. Specifically, before executing the current process, whether a matching parameter and an initial frequency sweeping parameter exist in a process formula is inquired, namely whether the current process is executed before is judged, if the matching parameter and the initial frequency sweeping parameter are inquired in the process formula, the current process is executed before is shown, so that the matching parameter and the initial frequency sweeping parameter in the process formula are directly obtained, and the step S1 and the step S2 are executed according to the matching parameter and the initial frequency sweeping parameter. By adopting the design, the optimal initial sweep frequency parameter can be directly called, so that the process chamber 100 can be quickly started and matched.
In an embodiment of the present application, as shown in fig. 1 to 3, if the matching parameters and the initial sweep frequency parameters are not queried in the process recipe, the matching parameters and the initial sweep frequency parameters are determined.
Optionally, determining the matching parameter includes: controlling the parameters of the capacitor assembly 21 in the matcher 2 as preset parameters; under the condition that the radio frequency power supply 1 is a fixed frequency parameter, controlling the matcher 2 to obtain a first capacitance parameter C1a and a second capacitance parameter C2a during matching according to a matching algorithm; the first capacitance parameter C1a and the second capacitance parameter C2a are recorded as matching parameters and stored in the process recipe.
Optionally, determining the initial sweep frequency parameters includes: controlling the radio frequency power supply 1 to be a fixed frequency parameter; setting parameters of a capacitor assembly 21 in the matcher 2 as a first capacitance parameter C1a and a second capacitance parameter C2a when the matcher 2 is in a manual mode; adjusting the second capacitance parameter C2a in a stepping manner according to a preset ratio to glow the process chamber 100, so as to obtain a third capacitance parameter C2b; the first capacitance parameter C1a and the third capacitance parameter C2b are recorded as the ignition parameters and stored in the process recipe.
As shown in fig. 1 to 3, before the current process is executed, it is determined whether a matching parameter and an initial frequency sweep parameter exist in the process recipe, that is, it is determined whether the current process has been executed before, and if the matching parameter and the initial frequency sweep parameter have not been queried in the process recipe, it is determined that the current process has not been executed, so that the first capacitance parameter C1a, the second capacitance parameter C2a, and the third capacitance parameter C2b need to be determined again, and the initial frequency sweep parameter is determined by calculation according to the method in the above embodiment. Specifically, when the matching parameters and the initial sweep frequency parameters in the current process recipe are not queried, the control device can first control the capacitor module 21 in the matcher 2 to be preset parameters, and then the first capacitor C is connected to the first capacitor C 1 And a second capacitor C 2 Adjusting to any common preset parameter, for example, the preset parameters of both are 50%At this time, the rf power source 1 is a fixed frequency parameter and no frequency sweep is performed, and the matching time may not be considered in order to obtain the initial frequency sweep parameter. Then, the matcher 2 is controlled to search for a matching position by adopting an automatic matching function, for example, the matching is automatically carried out by utilizing the existing matching algorithm after the radio frequency power is loaded, and the controller can automatically record the first capacitor C at the moment after the matching is finished 1 And a second capacitor C 2 The matcher 2 is controlled to obtain a first capacitance parameter C1a and a second capacitance parameter C2a according to a matching algorithm; the first capacitance parameter C1a and the second capacitance parameter C2a are recorded as matching parameters and stored in the process recipe.
Further, after stopping the loading of the rf power, the control device may set the matcher 2 to a manual mode and set the first capacitor C 1 And a second capacitor C 2 Setting the first capacitance parameter C1a and the second capacitance parameter C2a respectively, after loading the radio frequency power again, gradually trimming the second capacitor C by taking 0.1% as step length for the second capacitance parameter C2a 2 Parameters until ignition of the second capacitor C 2 The third capacitance parameter C2b is obtained by adjusting the second capacitance parameter C2a in a step-by-step manner according to a preset ratio to ignite the process chamber 100, recording the first capacitance parameter C1a and the third capacitance parameter C2b as ignition parameters, and storing the ignition parameters in the process recipe. Corresponding calculation is carried out through a second capacitance parameter C2a and a third capacitance energy C2b, and an initial frequency sweep frequency value f is finally obtained 1 After the steps are completed, the matching parameters and the initial sweep frequency parameters can be directly called from the process recipe when the process is executed.
As shown in fig. 1 to 3, the matching parameter may include a first capacitor C 1 And a second capacitor C 2 The second capacitance parameter of (2) and the capacitance parameters of both are obtained when the process chamber 100 is matched after the matcher 2 automatically matches under the condition that the radio frequency power supply 1 is a fixed frequency parameter. In the same case the second capacitor C can be switched by manual mode 2 Until the process chamber 100 is upAfter glow, the second capacitor C is now 2 And when the second capacitance parameter is in the third capacitance parameter, adjusting the second capacitance parameter to glow the process chamber 100 to obtain the third capacitance parameter, and implementing that the first capacitance parameter and the third capacitance parameter are used as glow starting parameters, so that the frequency sweeping efficiency of the radio frequency power supply 1 is further improved, and the glow starting and matching efficiency of the process chamber 100 is further improved.
Further, when the RF power source 1 starts to sweep with the initial sweep frequency parameter, the capacitor assembly 21 in the matcher 2 is set as the matching parameter, i.e. the first capacitor C 1 Is a first capacitance parameter, and a second capacitor C 2 The second capacitance parameter is set to return to the fixed frequency parameter at the end of the frequency sweep of the rf power supply 1, for example, the fixed frequency parameter takes 13.56MHz. For the commonly used structure of the L-shaped matching box 2, the frequency variation when the RF power source 1 sweeps frequency can substantially cover the position variation of the capacitor assembly 21 within a certain range, such as the second capacitor C shown in FIG. 2 2 Corresponding impedance of (2), impedance Z that can be matched at the back end of the radio frequency power supply 1 L The following formula is used for calculation and determination:
referring to FIG. 3, when ω C is reached 1 And ω C 2 Imaginary part of impedance versus ω C when varied 2 Is more sensitive when ω C 2 When the variation is small, the imaginary part of the impedance changes dramatically, and ω C 1 Relative change and ω C 2 When appropriate, the effect on the imaginary part of the impedance is relatively small, so when C 1 And C 2 The value is not changed, and the glow matching is realized only by the radio frequency power supply 1 through frequency sweeping, namely when changing omega =2 pi f, the second capacitor C can be equivalently covered 2 Is used to realize the matching of the imaginary part of the impedance, and the real part of the impedance is formed by omega C 1 It is determined that the real part of the general back-end impedance changes in a small range, and the main change is derived from the change of the imaginary part of the impedance. Thus, with the above design, only the second capacitor C is charged 2 The second capacitance parameter is adjusted to obtain a third capacitance parameterThe process chamber 100 is ignited by the capacitance parameter, and the second capacitor C is equivalently replaced by the automatic frequency sweeping mode of the radio frequency power supply 1 2 The parameter change in the embodiment of the present application makes the logic of the embodiment of the present application simpler, so as to further improve the starting efficiency of the process chamber 100, and also prevent the rf power source from entering the unstable starting region, thereby greatly improving the success rate of the starting of the process chamber 100. It should be noted that the embodiment of the present application does not limit the specific structure of the matching device 2, and for example, the matching device 2 may also adopt a pi-type or T-type structure. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.
In an embodiment of the present application, as shown in fig. 1 to 3, the initial frequency sweep parameter is determined according to the matching parameter, the fixed frequency parameter and the ignition parameter. Specifically, the matching parameters are a first capacitance parameter and a second capacitance parameter obtained by the matcher 2 in an automatic matching manner, that is, the first capacitor C in the matcher 2 1 And a second capacitor C 2 Parameters when the process chamber 100 is matched. The process formula also stores a luminance starting parameter which is obtained by the matcher 2 in an automatic matching way, namely a first capacitor C in the matcher 2 1 And a second capacitor C 2 Parameters at the time of ignition of the process chamber 100. The initial sweep frequency parameters are determined according to the matching parameters, the fixed frequency parameters, and the ignition parameters, i.e., the initial sweep frequency parameters are calculated from the ignition and matching paths of the capacitor assembly 21 to achieve fast ignition and matching of the process chamber 100. However, the embodiment of the present application does not limit the specific obtaining manner of the ignition parameter, for example, the ignition parameter may be obtained manually. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.
In an embodiment of the present application, as shown in fig. 1 to fig. 3, the initial sweep parameters need to satisfy the following formula:
2πf 0 *C2b＝2πf 1 *C2a
f 1 ＝f 0 *C2b/C2a
wherein, the first and the second end of the pipe are connected with each other,f 0 characterised by a fixed frequency parameter, f 1 The frequency sweep characteristic is an initial sweep frequency parameter, the C2a characteristic is a second capacitance parameter, and the C2b characteristic is a third capacitance parameter.
Optionally, the fixed frequency parameter is 400KHz, 2MHz, 13.56MHz or 40MHz. Specifically, when the radio frequency power supply 1 adopts a fixed frequency parameter f 0 Then, the matcher 2 obtains matching parameters, i.e., the second capacitor C, through automatic matching 2 Is a second capacitance parameter C2a; and obtaining the ignition parameter, i.e. the second capacitor C 2 Is the third matching parameter, and the initial sweep frequency parameter needs to satisfy the above formula. When the radio frequency power supply 1 starts to automatically sweep frequency, the radio frequency power supply 1 can be set as an initial sweep frequency parameter, and the matcher 2 is set as a matching parameter. By adopting the design, the embodiment of the application can be suitable for different processes, so that the applicability and the application range are greatly improved, and the repeatability and the stability of the processes can be determined.
In one embodiment, when the fixed frequency parameter of the RF power source 1 is f 0 When the frequency is 13.56MHz, the second capacitance parameter C2a in the matching parameters is 250pF, and the third capacitance parameter C2b in the glow starting parameters is 240pF, the corresponding initial sweep frequency parameter f can be obtained by calculation according to the formula 1 Should be 13.02MHz. However, the embodiment of the present application does not limit the fixed frequency parameter f 0 For example, the value can also be set to a value of 400KHz, 2MHz, or 40MHz, and the setting can be adjusted by those skilled in the art according to actual situations. By applying the initial sweep frequency parameter f 1 Stored in the process recipe, the rf power supply 1 can be pre-run to the initial sweep frequency parameter f each time the process is started 1 At the starting point, after the radio frequency power supply 1 loads power to the matcher 2 and the process chamber 100, the radio frequency power supply 1 will use the initial sweep frequency parameter f 1 The automatic sweep frequency matching is taken as a starting point, and the initial sweep frequency parameter f is adopted at the moment 1 The starting condition is satisfied, so that the RF power supply 1 is rapidly adjusted to the matching state, i.e. the fixed frequency parameter is f 0 The rapid ignition and matching of the process chamber 100 is achieved, and a matching flow chart in a specific process can be referred to as shown in fig. 4. It can be seen that through the pairThe calling of the optimal initial sweep frequency parameter can realize quick glow starting, and the repeatability and the stability of matching can be ensured, so that the consistency of process results is greatly improved.
Based on the same inventive concept, the embodiment of the present application provides a radio frequency impedance matching system, including: the device comprises a control device, a matcher and a radio frequency power supply; the control device is electrically connected with the matcher and the radio frequency power supply and is used for acquiring matching parameters and initial frequency sweeping parameters in the process formula; and controlling the parameters of the capacitor assembly in the matcher as matching parameters; and controlling the radio frequency power supply to start automatic frequency sweeping by using the initial frequency sweeping parameters, so that the impedance of the radio frequency power supply is equal to the impedance of the matcher and the impedance of the process chamber, and the process chamber is started to glow.
Based on the same inventive concept, the embodiment of the application provides semiconductor process equipment, which comprises: a process chamber and an rf impedance matching system for performing the rf impedance matching method as provided in the various embodiments described above.
By applying the embodiment of the application, the following beneficial effects can be at least realized:
according to the embodiment of the application, the matching parameters of the matcher and the initial frequency sweeping parameters of the radio frequency power supply are preset in the process formula, so that the matcher does not need to be automatically matched, and the radio frequency power supply can be called from the optimal initial frequency sweeping parameters to realize the rapid glow starting and matching of the process chamber, and therefore the glow starting efficiency of the process chamber can be greatly improved, the occurrence of the failure of glow starting matching can be avoided, the repeatability and stability of glow starting and matching can be further ensured, and the consistency of process results can be greatly improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Those of skill in the art will appreciate that the various operations, methods, steps in the processes, acts, or solutions discussed in this application can be interchanged, modified, combined, or eliminated. Further, other steps, measures, or schemes in various operations, methods, or flows that have been discussed in this application can be alternated, altered, rearranged, broken down, combined, or deleted. Further, steps, measures, schemes in the prior art having various operations, methods, procedures disclosed in the present application may also be alternated, modified, rearranged, decomposed, combined, or deleted.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
It should be understood that, although the steps in the flowcharts of the figures are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and may be performed in other orders unless otherwise indicated herein. Moreover, at least a portion of the steps in the flow chart of the figure may include multiple sub-steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, which are not necessarily performed in sequence, but may be performed alternately or alternately with other steps or at least a portion of the sub-steps or stages of other steps.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.
Claims (10)
1. A radio frequency impedance matching method is used for realizing the glow starting of a process chamber of semiconductor process equipment through a radio frequency power supply and a matcher, and is characterized by comprising the following steps:
acquiring a matching parameter and an initial frequency sweeping parameter in a process formula, wherein the initial frequency sweeping parameter is the initial frequency of starting automatic frequency sweeping of a radio frequency power supply;
controlling the parameters of a capacitor component in the matcher to be the matching parameters;
and controlling a radio frequency power supply to start automatic frequency sweeping by using the initial frequency sweeping parameters, and enabling the impedance of the radio frequency power supply to be equal to the impedance of the matcher and the impedance of the process chamber so as to start the process chamber.
2. The method of claim 1, wherein before obtaining the matching parameters and the initial sweep frequency parameters in the process recipe, further comprising:
querying the matching parameters and the initial sweep frequency parameters in the process recipe;
and if the matching parameters and the initial frequency sweeping parameters are inquired in the process formula, acquiring the matching parameters and the initial frequency sweeping parameters.
3. The method of claim 2, wherein the matching parameters and the initial sweep frequency parameters are determined if the matching parameters and the initial sweep frequency parameters are not queried in the process recipe.
4. The radio frequency impedance matching method of claim 3, wherein the determining the matching parameters comprises:
controlling parameters of a capacitor component in the matcher to be preset parameters;
under the condition that the radio frequency power supply is a fixed frequency parameter, controlling the matcher to obtain a first capacitance parameter and a second capacitance parameter during matching according to a matching algorithm;
and recording the first capacitance parameter and the second capacitance parameter as matching parameters, and storing the matching parameters into the process formula.
5. The radio frequency impedance matching method of claim 4, wherein the determining the initial swept frequency parameters comprises:
controlling the radio frequency power supply to be the fixed frequency parameter;
setting parameters of a capacitor component in the matcher to be the first capacitance parameter and the second capacitance parameter under the condition that the matcher is in a manual mode;
enabling the process chamber to glow in a stepping mode through the second capacitance parameter according to a preset proportion to obtain a third capacitance parameter;
and recording the first capacitance parameter and the third capacitance parameter as glow starting parameters, and storing the glow starting parameters into the process formula.
6. The radio frequency impedance matching method according to claim 5, wherein the initial sweep frequency parameter is determined based on the matching parameter, the fixed frequency parameter, and the ignition parameter.
7. The radio frequency impedance matching method of claim 6, wherein determining the initial swept frequency parameters requires satisfying the following equation:
2πf 0 *C2b＝2πf 1 *C2a
f 1 ＝f 0 *C2b/C2a
wherein, f 0 Characterised by said fixed frequency parameter, f 1 The initial sweep frequency parameter is characterized, the C2a is characterized as the second capacitance parameter, and the C2b is characterized as the third capacitance parameter.
8. The radio frequency impedance matching method according to any one of claims 5 to 7, wherein the fixed frequency parameter is 400KHz, 2MHz, 13.56MHz, or 40MHz.
9. A radio frequency impedance matching system, comprising: the device comprises a control device, a matcher and a radio frequency power supply;
the control device is electrically connected with the matcher and the radio frequency power supply and is used for acquiring matching parameters and initial frequency sweeping parameters in a process formula; and controlling the parameter of the capacitor component in the matcher as the matching parameter; and controlling the radio frequency power supply to start automatic frequency sweeping by using the initial frequency sweeping parameters, so that the impedance of the radio frequency power supply is equal to the impedance of the matcher and the impedance of the process chamber, and the process chamber is ignited.
10. A semiconductor processing apparatus, comprising: a process chamber and an rf impedance matching system for performing the rf impedance matching method of any of claims 1 to 8.
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