CN115376966A - Quartz normal-temperature bonding method - Google Patents

Quartz normal-temperature bonding method Download PDF

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Publication number
CN115376966A
CN115376966A CN202210949095.6A CN202210949095A CN115376966A CN 115376966 A CN115376966 A CN 115376966A CN 202210949095 A CN202210949095 A CN 202210949095A CN 115376966 A CN115376966 A CN 115376966A
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CN
China
Prior art keywords
quartz
silicon dioxide
bonding
bonding method
cleaning
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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CN202210949095.6A
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Chinese (zh)
Inventor
刘佳晶
陈涛
王宣欢
孙萱
方小磊
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Changchun Changguang Yuanchen Microelectronic Technology Co ltd
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Changchun Changguang Yuanchen Microelectronic Technology Co ltd
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Priority to CN202210949095.6A priority Critical patent/CN115376966A/en
Publication of CN115376966A publication Critical patent/CN115376966A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00841—Cleaning during or after manufacture
    • B81C1/00849—Cleaning during or after manufacture during manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Joining Of Glass To Other Materials (AREA)

Abstract

The invention provides a quartz normal-temperature bonding method, which comprises the following steps: s100, cleaning the surface of a quartz plate; s200, performing silicon dioxide deposition on the two quartz plates, and generating a silicon dioxide bonding film on the surfaces of the quartz plates; s300, carrying out chemical mechanical polishing on the silicon dioxide bonding film; s400, cleaning the quartz plate by using a hydrofluoric acid solution; and S500, enabling the silicon dioxide bonding films of the two quartz pieces to contact with each other and bonding the quartz pieces through a bonding machine. The scheme can realize the bonding of quartz and quartz at normal temperature with high reliability.

Description

Quartz normal-temperature bonding method
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a quartz normal-temperature bonding method.
Background
Quartz is widely used in micro-electromechanical systems devices, opto-electronic devices, and microfluidic devices due to its excellent thermal, force, optical, and chemical properties. The bonding of quartz and quartz is regarded as a reliable solid connection mode, is widely regarded by various countries, and is widely applied to various fields such as aerospace, basic scientific research, strong laser and the like.
There are various methods for connecting quartz, and optical glue method, thermal bonding method and vacuum bonding method are commonly used. The optical cement method has relatively poor reliability. The thermal bonding method requires heating treatment of quartz, and has complicated operation and low yield. The vacuum bonding method requires placing quartz in a vacuum environment for bonding, and the obtained bonding strength is weak. Therefore, the traditional bonding mode limits the application range of the device, so that a new effective bonding mode is needed.
The invention patent application with publication number CN113488381A discloses a direct bonding method of quartz and silicon, but when the quartz and the quartz are bonded, the direct bonding method of quartz and silicon results in a large amount of bubbles between the quartz, that is, most of the regions with unsuccessful bonding exist between the quartz pieces, so that the bonding effect between the quartz is poor, and thus the direct bonding method of quartz and silicon cannot be directly applied to the bonding of quartz and quartz.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a quartz normal-temperature bonding method which can realize bonding of quartz and quartz at normal temperature and normal pressure with high reliability.
In order to achieve the purpose, the invention adopts the following specific technical scheme:
the quartz normal-temperature bonding method provided by the embodiment of the invention comprises the following steps:
s100, cleaning the surface of a quartz plate;
s200, carrying out silicon dioxide deposition on the two quartz plates, and generating a silicon dioxide bonding film on the surfaces of the quartz plates;
s300, carrying out chemical mechanical polishing on the silicon dioxide bonding film;
s400, cleaning the quartz plate by using a hydrofluoric acid solution;
s500, enabling the silicon dioxide bonding films of the two quartz plates to be in contact with each other and bonding the quartz plates through a bonding machine.
The invention can at least obtain the following beneficial effects: the bonding between the quartz chips is completed under normal temperature and normal pressure, high temperature condition and vacuum condition are not needed, and the reliability is high. After the quartz plates are ground, the quartz plates are cleaned by hydrofluoric acid solution, so that the bonding effect among the quartz plates is improved, and an unbonded area or a small part of an unbonded area does not exist among the quartz plates. Compared with the traditional optical cement method, thermal bonding and vacuum bonding method, the scheme overcomes the defects of the traditional quartz bonding technology, can realize the bonding of quartz and quartz at normal temperature and normal pressure with high reliability, does not need any intermediate layer substance for auxiliary connection, does not damage the optical performance of a quartz interface, and has remarkable advantages in the aspects of bonding strength, temperature impact environment and water environment adaptability.
According to some embodiments of the invention, the S200 includes depositing the silicon dioxide on the quartz wafer using a chemical vapor deposition method, the silicon dioxide generation source being tetraethoxysilane.
According to some embodiments of the invention, the silica-bonded film thickness generated in the S200 is 1 micron to 3 microns.
According to some embodiments of the invention, the S300 comprises the following sub-steps:
s301, placing the quartz plate into a grinding cavity to grind the silicon dioxide bonding film;
s302, placing the ground quartz wafer into a polishing cavity, and polishing the silicon dioxide bonding film;
s303, placing the polished quartz plate into an ultrasonic cavity for ultrasonic cleaning;
s304, placing the quartz plate subjected to ultrasonic cleaning into a cleaning cavity for cleaning;
s305, placing the cleaned quartz plate into the spin-drying cavity for spin-drying.
According to some embodiments of the invention, the thickness of the silicon dioxide bonded film after the S300 treatment is 5000 angstroms to 15000 angstroms.
According to some embodiments of the present invention, the silicon dioxide bonding film after the S300 process has an arithmetic mean deviation Ra of less than 1 nm and a root mean square roughness Rq of less than 1.5 nm.
According to some embodiments of the invention, the hydrofluoric acid solution has a concentration of 2% to 5%.
According to some embodiments of the invention, the S500 comprises: s501, enabling the two quartz plates to sequentially enter a plasma cavity, and activating plasma on the surface; s502, enabling the quartz plate to enter a cleaning cavity to carry out surface hydrophilic treatment; s503, applying pressure to the quartz plate above to enable the two quartz plates to be bonded.
According to some embodiments of the present invention, the pressure applied to the quartz plate in S503 has a duration of 2 seconds to 20 seconds.
According to some embodiments of the invention, the normal temperature quartz bonding method further comprises annealing the bonding piece.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a flow chart of a normal temperature bonding method for quartz according to an embodiment of the invention;
FIG. 2 is a flowchart of S300 according to an embodiment of the present invention;
FIG. 3 is a flowchart of S500 according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating the normal temperature bonding method of quartz without S400 quartz bond and effect thereof according to the embodiment of the invention;
FIG. 5 is a schematic diagram of the quartz bonding method and effects according to the embodiment of the invention;
FIG. 6 is a schematic diagram of a normal temperature bonding method of quartz according to an embodiment of the present invention;
fig. 7 is a surface roughness of a silicon dioxide bonding film after chemical mechanical polishing of the silicon dioxide bonding film according to an embodiment of the present invention.
Reference numerals are as follows:
quartz plate 1, silicon dioxide bonding film 2.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same reference numerals are used for the same blocks. In the case of the same reference numerals, their names and functions are also the same. Therefore, detailed description thereof will not be repeated.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
The quartz normal-temperature bonding method provided by the embodiment of the invention comprises the following steps: s100, cleaning the surface of the quartz plate 1; s200, performing silicon dioxide deposition on the two quartz pieces 1, and generating a silicon dioxide bonding film 2 on the surfaces of the quartz pieces 1; s300, carrying out chemical mechanical grinding on the silicon dioxide bonding film 2; s400, cleaning the quartz plate 1 by using a hydrofluoric acid solution; and S500, the silicon dioxide bonding films 2 of the two quartz pieces 1 are contacted with each other and the quartz pieces 1 are bonded through a bonding machine.
The scheme can complete bonding among the quartz wafers 1 at normal temperature, does not need high temperature conditions, and can be used for manufacturing various chips. The bonding effect between the quartz pieces 1 can be improved by cleaning the quartz pieces 1 with a hydrofluoric acid solution after polishing the quartz pieces 1, so that no unbonded area or only a small part of the unbonded area exists between the quartz pieces 1. Compared with the traditional optical cement method, thermal bonding method and vacuum bonding method, the scheme overcomes the defects of the traditional quartz bonding technology, can realize the bonding of quartz and quartz at high reliability under normal temperature and normal pressure, does not need any intermediate layer substance for auxiliary connection, does not damage the optical performance of a quartz interface, and the quartz wafer 1 bonded by the scheme has obvious advantages in the aspects of bonding strength, temperature impact environment and water environment adaptability.
As shown in fig. 1 and 6, the normal temperature bonding method of quartz includes:
s100, cleaning the surface of the quartz plate 1.
And cleaning by using the SC1 solution to ensure the cleanliness of the surface of the quartz plate 1.
And S200, performing silicon dioxide deposition on the two quartz pieces 1, and generating a silicon dioxide bonding film 2 on the surface of the quartz piece 1.
Two quartz pieces 1 are placed in a chemical vapor deposition device for silicon dioxide deposition, so that a silicon dioxide bonding film 2 with silicon dioxide as a main component is generated on the surface of the quartz piece 1. Since the quartz is mainly composed of silicon dioxide, the resulting silicon dioxide bonding film 2 does not affect the optical properties of quartz.
According to some embodiments of the present invention, the S200 includes depositing the silicon dioxide on the quartz wafer 1 using a chemical vapor deposition method, the silicon dioxide generation source being tetraethoxysilane. Generating silicon dioxide by using tetraethoxysilane, and generating a silicon dioxide bonding film 2 on the surface of the quartz wafer 1 by a chemical vapor deposition method.
According to some embodiments of the present invention, the silicon dioxide bonding film 2 generated in S200 has a thickness of 1 micron to 3 microns. The thickness of the silicon dioxide bonding film 2 is 1 micrometer to 3 micrometers to prevent the silicon dioxide bonding film 2 from being completely removed in the subsequent process.
And S300, carrying out chemical mechanical polishing on the silicon dioxide bonding film 2.
The shape and thickness of the generated silicon dioxide bonding film 2 are often difficult to meet the bonding requirement, so that the silicon dioxide bonding film 2 needs to be subjected to chemical mechanical polishing treatment to enable the silicon dioxide bonding film 2 to meet the bonding condition.
According to some embodiments of the present invention, as shown in fig. 2, S300, performing chemical mechanical polishing on the silicon dioxide bonding film 2 includes:
s301, the quartz plate 1 is placed into a grinding cavity to grind the silicon dioxide bonding film 2.
And grinding the silicon dioxide bonding film 2 to enable the thickness of the silicon dioxide bonding film 2 to meet the bonding condition.
And S302, placing the ground quartz wafer 1 into a silicon dioxide bonding film 2 in a polishing cavity for polishing.
The ground silicon dioxide bonding film 2 has large surface roughness, which affects the optical performance of the quartz plate 1 and the bonding effect of the quartz plate 1, so the silicon dioxide bonding film 2 is polished.
And S303, placing the polished quartz plate 1 into an ultrasonic cavity for ultrasonic cleaning.
S304, the quartz plate 1 after ultrasonic cleaning is placed in a cleaning cavity for cleaning.
S303 and S304 clean the quartz plate 1 to remove impurities generated by grinding and polishing.
S305, putting the cleaned quartz plate 1 into a drying cavity for drying, and removing the cleaning liquid on the quartz plate 1.
According to some embodiments of the present invention, the silicon dioxide bonding film 2 after the chemical mechanical polishing process has a thickness of 5000 angstroms to 15000 angstroms. The quartz plate 1 bonding and effect are better when the thickness of the silicon dioxide bonding film 2 is 5000 angstroms to 15000 angstroms.
According to some embodiments of the present invention, the silicon dioxide bonding film 2 after being processed in S300 has an arithmetic mean deviation Ra of less than 1 nm and a root mean square roughness Rq of less than 1.5 nm.
The surface roughness of the silicon dioxide bonding film 2 influences the bonding effect, the arithmetic mean deviation Ra of the outline is less than 1 nanometer, and the bonding effect is better when the root mean square roughness Rq is less than 1.5 nanometers.
FIG. 7 shows the arithmetic mean deviation and root mean square roughness of the profile actually measured on the quartz plate 1 after the chemical mechanical polishing, where "Slot" is the measured position, "AFM" represents the type of surface roughness, and "CMP" is the chemical mechanical polishing. As shown in fig. 7, the surface roughness of the silicon dioxide bonding film 2 after the post-treatment of the chemical mechanical polishing satisfies the bonding requirement.
In some cases, there is a need for a surface roughness of the quartz plate 1, and the surface of the quartz plate 1 is subjected to chemical mechanical polishing, as shown in fig. 7, so that the arithmetic mean deviation Ra of the profile of the quartz plate 1 is less than 1 nm and the root mean square roughness Rq is less than 1.5 nm.
And S400, cleaning the quartz plate 1 by using a hydrofluoric acid solution.
After the quartz plates 1 are cleaned by hydrofluoric acid solution, the bonding effect among the quartz plates 1 can be greatly improved. As shown in fig. 4 and 5, in which the white area is the bubble area, it can be seen from comparing fig. 4 and 5 that the large area of bubbles exists after the bonding of the quartz wafer 1 without using the hydrofluoric acid solution to clean the quartz wafer 1, and the bubbles also exist at the middle position of the quartz wafer 1, and some small bubbles exist only at the edge position after the bonding of the quartz wafer 1 by using the hydrofluoric acid solution to clean the quartz wafer 1.
According to some embodiments of the invention, S400 further comprises spin-drying the quartz wafer 1 after the hydrofluoric acid solution is washed. And cleaning the quartz plate 1 by using a hydrofluoric acid solution, and then removing the hydrofluoric acid solution to avoid interference on subsequent steps. According to some embodiments of the invention, the concentration of the hydrofluoric acid solution is 2% -5%. The method has the advantages that the better effect can be obtained by using the low-concentration hydrofluoric acid solution to clean the quartz piece 1, the effect is best when the concentration of the hydrofluoric acid solution is 2% -5%, the main component of the quartz is silicon dioxide, when the concentration of the hydrofluoric acid solution is higher than 5%, the hydrofluoric acid solution can corrode the quartz piece 1, and when the concentration of the hydrofluoric acid solution is lower than 2%, the cleaning effect on the quartz piece 1 and the bonding effect between the quartz pieces 1 are improved slightly.
And S500, the silicon dioxide bonding films 2 of the two quartz pieces 1 are contacted with each other and the quartz pieces 1 are bonded through a bonding machine. After the pre-treatment, the silicon dioxide bonding films 2 between the two quartz pieces 1 can be directly bonded by a bonding machine.
According to some embodiments of the invention, as shown in fig. 3, S500 includes:
s501, two quartz plates 1 firstly enter a plasma cavity in sequence, and plasma is activated on the surface. So that the silicon dioxide bonding film 2 can attach more hydroxyl groups.
S502, enabling the quartz plate 1 to enter the cleaning cavity to carry out surface hydrophilic treatment. So that the surface of the silicon dioxide bonding film 2 is connected with hydroxyl groups.
And S503, applying pressure to the upper quartz piece 1 to bond the two quartz pieces 1. Chemical bonds are generated between the two silicon dioxide bonding films 2 to connect the two quartz plates 1.
According to some embodiments of the present invention, the pressure applied to the quartz plate 1 in S503 has a duration of 2 seconds to 20 seconds. When the pressure duration is less than 2s, the reaction between the two silicon dioxide bonding films 2 is incomplete, and when the pressure duration is more than 20s, the bonding effect between the quartz plates 1 may be affected.
According to some embodiments of the invention, the quartz normal temperature bonding method further comprises annealing the bonding piece. And (3) putting the successfully bonded bonding piece into an oven for annealing, improving the surface bonding force, and removing water vapor on the bonding surface to completely bond the two quartz pieces 1 together.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Moreover, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without being mutually inconsistent.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.

Claims (10)

1. A quartz normal temperature bonding method is characterized by comprising the following steps:
s100, cleaning the surface of a quartz plate;
s200, carrying out silicon dioxide deposition on the two quartz plates, and generating a silicon dioxide bonding film on the surfaces of the quartz plates;
s300, carrying out chemical mechanical polishing on the silicon dioxide bonding film;
s400, cleaning the quartz plate by using a hydrofluoric acid solution;
s500, enabling the silicon dioxide bonding films of the two quartz plates to be in contact with each other and bonding the quartz plates through a bonding machine.
2. The quartz room temperature bonding method of claim 1, wherein the step S200 includes depositing the silicon dioxide on the quartz wafer by using a chemical vapor deposition method, and the silicon dioxide generation source is tetraethoxysilane.
3. The quartz room-temperature bonding method according to claim 1, wherein the thickness of the silica bonding film formed in S200 is 1 to 3 μm.
4. The quartz room-temperature bonding method of claim 1, wherein the S300 includes the substeps of:
s301, placing the quartz wafer into a grinding cavity to grind the silicon dioxide bonding film;
s302, placing the ground quartz wafer into a polishing cavity, and polishing the silicon dioxide bonding film;
s303, placing the polished quartz plate into an ultrasonic cavity for ultrasonic cleaning;
s304, placing the quartz plate subjected to ultrasonic cleaning into a cleaning cavity for cleaning;
s305, placing the cleaned quartz plate into the spin-drying cavity for spin-drying.
5. The normal temperature bonding method of quartz according to claim 4, wherein the thickness of the silicon dioxide bonding film after the S300 treatment is 5000 angstroms to 15000 angstroms.
6. The quartz room temperature bonding method of claim 4, wherein the silicon dioxide bonding film after the S300 treatment has an arithmetic mean deviation Ra of profile less than 1 nm and a root mean square roughness Rq of less than 1.5 nm.
7. The quartz normal-temperature bonding method according to claim 1, wherein the concentration of the hydrofluoric acid solution is 2% -5%.
8. The quartz room-temperature bonding method of claim 1, wherein the S500 includes the following substeps:
s501, enabling the two quartz plates to sequentially enter a plasma cavity, and activating plasma on the surface;
s502, enabling the quartz plate to enter a cleaning cavity to carry out surface hydrophilic treatment;
s503, applying pressure to the quartz plate above to enable the two quartz plates to be bonded.
9. The normal temperature bonding method of quartz as claimed in claim 8, wherein the pressure applied to the quartz plate in S503 is applied for a duration of 2 seconds to 20 seconds.
10. The normal temperature bonding method for quartz according to claim 1, further comprising annealing the bonding wafer.
CN202210949095.6A 2022-08-09 2022-08-09 Quartz normal-temperature bonding method Pending CN115376966A (en)

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CN202210949095.6A CN115376966A (en) 2022-08-09 2022-08-09 Quartz normal-temperature bonding method

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Application Number Priority Date Filing Date Title
CN202210949095.6A CN115376966A (en) 2022-08-09 2022-08-09 Quartz normal-temperature bonding method

Publications (1)

Publication Number Publication Date
CN115376966A true CN115376966A (en) 2022-11-22

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