CN115360307B - Preparation method of perovskite thin film - Google Patents
Preparation method of perovskite thin film Download PDFInfo
- Publication number
- CN115360307B CN115360307B CN202211264959.7A CN202211264959A CN115360307B CN 115360307 B CN115360307 B CN 115360307B CN 202211264959 A CN202211264959 A CN 202211264959A CN 115360307 B CN115360307 B CN 115360307B
- Authority
- CN
- China
- Prior art keywords
- perovskite
- film
- precursor solution
- solvent
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention provides a preparation method of a perovskite thin film, which comprises the following steps: a) Placing the perovskite precursor solution on the surface of a substrate to obtain a perovskite precursor solution film; b) And c) carrying out vacuum anti-solvent annealing on the perovskite precursor solution film obtained in the step a) to obtain the perovskite film. Compared with the prior art, the invention provides a method for preparing the perovskite thin film under the atmosphere control condition, which is used for realizing controllable preparation of the perovskite solar cell; aiming at the defects of the existing perovskite thin film in the solution method preparation process and the current requirements for improving the performance of a perovskite battery device and improving the performance of an optoelectronic device, a novel vacuum anti-solvent annealing mode is provided, and the perovskite thin film is annealed by using a vacuum liquid anti-solvent vaporization anti-solvent (chlorobenzene, diethyl ether and the like), so that the controllable preparation of the device can be realized, and the repeatability and the yield of the device preparation can be ensured.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of a perovskite thin film.
Background
The organic-inorganic hybrid perovskite solar cell is one of the hottest photovoltaic materials in the organic-inorganic hybrid perovskite materials at present, and has higher theoretical conversion efficiency than other photovoltaic materials in a theoretical angle, and the efficiency reaches 25.7 percent at present; in addition, the organic-inorganic hybrid perovskite layer has a processable optical characteristic, can realize the preparation of solar cells of the types of crystalline silicon/perovskite lamination, perovskite/perovskite lamination and organic/perovskite lamination, and provides multiple possibilities for reducing cost and improving efficiency of the solar cells. From the aspect of industrial preparation, the perovskite solar cell has low material consumption and wide raw material source, and is suitable for industrial production. Therefore, the preparation of low-cost, high-photoelectric conversion efficiency and high-stability solar cells by a simple method is a main purpose of the perovskite industrialization at present. The realization of the high-efficiency perovskite battery mainly comprises the contents of battery structure design, transmission layer selection, perovskite active layer preparation, interface passivation and the like, wherein the most significant and most challenging is the controllable preparation of the large-size perovskite active layer, and for example, small changes of material formula, preparation step control, preparation atmosphere (chemical atmosphere, environmental humidity and the like), phase formation temperature control and the like can have a significant influence on the preparation of the perovskite active layer.
Disclosure of Invention
In view of this, the present invention provides a method for preparing a perovskite thin film, which can realize controllable preparation of a device and ensure repeatability and yield of the device preparation by adopting a vacuum anti-solvent annealing manner.
The invention provides a preparation method of a perovskite thin film, which comprises the following steps:
a) Placing the perovskite precursor solution on the surface of a substrate to obtain a perovskite precursor solution film;
b) And c) carrying out vacuum anti-solvent annealing on the perovskite precursor solution film obtained in the step a) to obtain the perovskite film.
Preferably, the perovskite precursor solution is placed on the surface of the substrate in step a) by spin coating, blade coating, slot coating or spray coating.
Preferably, the thin film of perovskite precursor solution in step a) has ABX 3 A crystal structure of the form (A) is an organic cation and/or an inorganic cation, B is a divalent metal ion, and X is I - 、Br - And Cl - One or more of (a).
Preferably, the divalent metal ion is Pb 2+ Or Sn 2+ 。
Preferably, the antisolvent in step b) is selected from one or more of chlorobenzene, diethyl ether, acetone, toluene, ethyl acetate and chloroform.
Preferably, the vacuum anti-solvent annealing process in the step b) specifically comprises the following steps:
and transferring the perovskite precursor solution film to a vacuum cavity, vacuumizing, introducing an anti-solvent to realize vaporization, keeping for 0.5min to 2min, and then annealing to obtain the perovskite film.
Preferably, the anti-solvent is used in an amount of > 1ml/m 3 。
Preferably, the vacuum degree of the vacuum pumping is less than 100Pa.
Preferably, the annealing treatment temperature is 70-200 ℃, and the time is 3-60min.
The invention provides a preparation method of a perovskite thin film, which comprises the following steps: a) Placing the perovskite precursor solution on the surface of a substrate to obtain a perovskite precursor solution film; b) And c) carrying out vacuum anti-solvent annealing on the perovskite precursor solution film obtained in the step a) to obtain the perovskite film. Compared with the prior art, the invention provides a method for preparing a perovskite thin film under an atmosphere control condition, which is used for realizing controllable preparation of a perovskite solar cell; aiming at the defects of the existing perovskite thin film in the solution method preparation process and the current requirements for improving the performance of a perovskite battery device and a photoelectric device, a novel vacuum anti-solvent annealing mode is provided, and the perovskite thin film is annealed by using a vacuum liquid anti-solvent vaporization anti-solvent (chlorobenzene, ether and the like), so that the controllable preparation of the device can be realized, and the repeatability and the yield of the device preparation can be ensured.
In addition, the preparation method provided by the invention has the advantages of simple process, mild condition, easiness in control and wide application prospect.
Drawings
FIG. 1 is a schematic diagram of a method for preparing a perovskite thin film according to an embodiment of the invention;
FIG. 2 is a graph of current density versus voltage for a cell prepared in example 1 of the present invention;
FIG. 3 is a graph of current density versus voltage for a cell prepared in example 2 of the present invention;
fig. 4 is a graph of current density versus voltage for a cell prepared in example 3 of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a preparation method of a perovskite thin film, which comprises the following steps:
a) Placing the perovskite precursor solution on the surface of a substrate to obtain a perovskite precursor solution film;
b) And c) carrying out vacuum anti-solvent annealing on the perovskite precursor solution film obtained in the step a) to obtain the perovskite film.
Firstly, placing a perovskite precursor solution on the surface of a substrate to obtain the perovskite precursor solution film.
In the invention, the perovskite precursor solution is preferably placed on the surface of the substrate by spin coating, blade coating, slit coating or spray coating; the deposition of the perovskite thin film is performed by the above-mentioned liquid phase coating method well known to those skilled in the art, and the present invention is not particularly limited thereto.
In the present invention, the perovskite precursor solution thin film preferably has ABX 3 A crystal structure of the formula (I), wherein A is an organic cationA cation and/or an inorganic cation, B is a divalent metal ion, X is I - 、Br - And Cl - One or more of (a). In the present invention, the positive divalent metal ion is preferably Pb 2+ Or Sn 2+ More preferably Pb 2+ . On the basis of the above, a perovskite precursor solution capable of forming a thin film of the perovskite precursor solution is known to those skilled in the art, and the preparation method of the perovskite precursor solution is not particularly limited by those skilled in the art.
In the present invention, the thin film of the perovskite precursor solution is also required to have a certain thickness (generally greater than 100 nm) and to have good adhesion to the substrate.
The type and source of the substrate are not particularly limited in the present invention, and the substrate is preferably a charge transport layer composited on a transparent conductive substrate as is well known to those skilled in the art, according to the basic requirements for preparing perovskite solar cells.
In the present invention, the transparent conductive substrate may be ITO glass, FTO glass, AZO glass, conductive PET, and other common transparent substrates known to those skilled in the art, and is preferably ITO glass or FTO glass.
In the present invention, the charge transport layer includes an electron transport layer and a hole transport layer; the electron transport layer is preferably SnO 2 Layer, tiO 2 Layer or C60 and derivatives thereof, more preferably SnO 2 A layer or a C60 electron transport layer; the thickness of the electronic transmission layer is preferably 10nm to 100nm, and more preferably 20nm to 40nm; the hole transport layer is preferably a Spiro-OMeTAD layer, a NiOx layer or a CuOx layer, more preferably a Spiro-OMeTAD layer or a NiOx layer; the thickness of the hole transport layer is preferably 10nm to 100nm, and more preferably 20nm to 60nm.
After the perovskite precursor solution film is obtained, the invention carries out vacuum anti-solvent annealing on the obtained perovskite precursor solution film to obtain the perovskite film.
In the present invention, the antisolvent is preferably one or more selected from chlorobenzene, diethyl ether, acetone, toluene, ethyl acetate and chloroform, more preferably chlorobenzene or diethyl ether.
In the present invention, the vacuum anti-solvent annealing process preferably includes:
transferring the perovskite precursor solution film to a vacuum cavity, vacuumizing, introducing an anti-solvent to realize vaporization, keeping for 0.5min to 2min, and then annealing to obtain the perovskite film;
more preferably:
transferring the perovskite precursor solution film to a vacuum cavity, vacuumizing, introducing an anti-solvent to realize vaporization, keeping for 1min, and then annealing to obtain the perovskite film.
The source of the antisolvent in the present invention is not particularly limited, and commercially available products known to those skilled in the art may be used. The anti-solvent is placed in a container and communicated with a vacuum cavity, and the anti-solvent is controlled to enter the vacuum cavity through a valve in the middle; the anti-solvent valve is opened to release the anti-solvent in the process of introducing the anti-solvent.
In the present invention, the anti-solvent is preferably used in an amount of > 1ml/m 3 。
In the present invention, the degree of vacuum of the evacuation is preferably < 100Pa, and more preferably from 7Pa to 10Pa.
In the invention, the annealing treatment temperature is preferably 70-200 ℃, more preferably 100-150 ℃, and the time is preferably 3-60min, more preferably 10min-45min.
The invention provides a method for preparing a perovskite thin film under an atmosphere control condition, which is used for realizing controllable preparation of a perovskite solar cell; aiming at the defects of the existing perovskite thin film in the preparation process of a solution method and the current requirements for improving the performance of a perovskite cell device and a photoelectric device, a novel vacuum desolvation annealing mode is provided (the process of preparing the desolvation by desolvation gas state is realized under the vacuum atmosphere, the traditional liquid desolvation action process is abandoned), the perovskite thin film is annealed by using the vacuum liquid desolvation vaporization desolvation (chlorobenzene, ether and the like), the controllable preparation of the device can be realized, the repeatability and the yield of the device preparation can be ensured, and the method is particularly suitable for preparing an organic-inorganic hybrid perovskite solar cell absorption layer (perovskite thin film).
The invention provides a preparation method of a perovskite thin film, which comprises the following steps: a) Placing the perovskite precursor solution on the surface of a substrate to obtain a perovskite precursor solution film; b) And c) carrying out vacuum anti-solvent annealing on the perovskite precursor solution film obtained in the step a) to obtain the perovskite film. Compared with the prior art, the invention provides a method for preparing a perovskite thin film under an atmosphere control condition, which is used for realizing controllable preparation of a perovskite solar cell; aiming at the defects of the existing perovskite thin film in the solution method preparation process and the current requirements for improving the performance of a perovskite battery device and improving the performance of an optoelectronic device, a novel vacuum anti-solvent annealing mode is provided, and the perovskite thin film is annealed by using a vacuum liquid anti-solvent vaporization anti-solvent (chlorobenzene, diethyl ether and the like), so that the controllable preparation of the device can be realized, and the repeatability and the yield of the device preparation can be ensured.
In addition, the preparation method provided by the invention has the advantages of simple process, mild condition, easiness in control and wide application prospect.
To further illustrate the present invention, the following examples are provided for illustration.
Example 1
10ml of chlorobenzene was added to the vessel as an anti-solvent.
Indium Tin Oxide (ITO) glass (glass thickness is 2mm, ITO film thickness is 100 nm) with the thickness of 1.5cm multiplied by 1.5cm is respectively cleaned by ethanol, isopropanol (IPA) and acetone for 30 minutes and dried by a nitrogen gun; then adding tin dioxide (SnO) 2 ) The volume ratio of stock solution to ultrapure water is 1:5, and fully stirring to obtain SnO 2 Precursor solution; taking 50 mu L SnO 2 Uniformly spreading the precursor solution on the surface of the ITO conductive glass, wherein the parameters of a spin coater are set to 4000rpm/s for 30s; then placing the mixture on a hot table at 150 ℃ for annealing for 30min to obtain SnO 2 Thin film (30 nm); snO prepared by the above 2 And (3) treating the film in an ultraviolet ozone cleaner for 30min for subsequent spin coating.
At a volume ratio of 4:1, preparing a perovskite precursor solution a (1.2M) in a mixed solvent of DMF and DMSO: pbI 2 /PbBr 2 Is 0.85:0.15, molar ratio FAI/MABr of 0.85:0.15, (PbI) 2 +PbBr 2 ) The molar ratio of (FAI + MABr) was 1:1; 60 mu L of solution A is uniformly paved on the annealed SnO 2 Setting parameters of a spin coater on the surface of the film at a speed of 4000rpm for 30s to obtain a perovskite precursor solution film; transferring the perovskite precursor solution film to a vacuum cavity (0.3 m multiplied by 0.2 m), quickly vacuumizing to 10Pa, opening an anti-solvent valve, releasing the anti-solvent, keeping for 1min, then heating the film to 120 ℃, and preserving heat for 15min to obtain the perovskite film.
Spin-coat a Spiro-OMeTAD solution (60. Mu.L of 70mg/mL chlorobenzene solution) at 2800rpm onto the prepared perovskite thin film for 30s; finally, the top Au layer with a thickness of 100nm was thermally evaporated by using a high vacuum evaporation apparatus, to obtain a battery device.
Comparative example 1
Obtaining a battery device by adopting the preparation method provided by the embodiment 1; the difference lies in that: and (3) annealing without adopting a vacuum anti-solvent, dripping anti-solvent chlorobenzene in the perovskite film-forming spin coating process, heating the perovskite precursor solution film to 120 ℃, and preserving heat for 15min to obtain the perovskite film.
The performance data of the battery devices provided in example 1 and comparative example 1 are shown in table 1.
Table 1 performance data for the cells prepared in example 1 and comparative example 1
| Open circuit voltage (V) | Fill factor (%) | Current Density (mA cm) -2 ） | Photoelectric conversion efficiency (%) | |
| Example 1 | 1.05 | 72.31 | 22.03 | 16.81 |
| Comparative example 1 | 1.04 | 66.34 | 21.38 | 14.85 |
Example 2
5ml of diethyl ether was added to the vessel as an anti-solvent.
Indium Tin Oxide (ITO) glass (glass thickness is 2mm, ITO film thickness is 100 nm) with the thickness of 1.5cm multiplied by 1.5cm is respectively cleaned by ethanol, isopropanol (IPA) and acetone for 30 minutes and dried by a nitrogen gun; then adding tin dioxide (SnO) 2 ) The volume ratio of stock solution to ultrapure water is 1:5, fully stirring to obtain SnO 2 Precursor solution; taking 50 mu L SnO 2 Uniformly spreading the precursor solution on the surface of the ITO conductive glass, wherein the parameters of a spin coater are set to 4000rpm/s for 30s; then placing the mixture on a hot table at 150 ℃ for annealing for 30min to obtain SnO 2 Thin film (30 nm); snO prepared by the above 2 And (3) treating the film in an ultraviolet ozone cleaner for 30min for subsequent spin coating.
In a volume ratio of 4:1 in a mixed solvent of DMF and DMSO, perovskite precursor solution a (1.2M): pbI 2 /PbBr 2 Is 0.85:0.15 molar ratio of FAI/MABrIs 0.85:0.15, (PbI) 2 +PbBr 2 ) The molar ratio of (FAI + MABr) was 1:1; 60 mu L of solution A is uniformly paved on the annealed SnO 2 Setting parameters of a spin coater on the surface of the film at 4000rpm for 30s to obtain a perovskite precursor solution film; transferring the perovskite precursor solution film to a vacuum cavity (0.3 m multiplied by 0.2 m), quickly vacuumizing to 10Pa, opening an anti-solvent valve, releasing the anti-solvent, keeping for 1min, then heating the film to 120 ℃, and preserving heat for 15min to obtain the perovskite film.
Spin-coat a Spiro-OMeTAD solution (60. Mu.L of 70mg/mL chlorobenzene solution) at 2800rpm onto the prepared perovskite thin film for 30s; finally, the top Au layer with a thickness of 100nm was thermally evaporated by using a high vacuum evaporation apparatus, to obtain a battery device.
Comparative example 2
Obtaining a battery device by using the preparation method provided in the embodiment 2; the difference lies in that: and (3) annealing without adopting a vacuum anti-solvent, dropwise adding anti-solvent ethyl ether in the perovskite film-forming spin coating process, then heating the perovskite precursor solution film to 120 ℃, and preserving heat for 15min to obtain the perovskite film.
The performance data of the battery devices provided in example 2 and comparative example 2 are shown in table 2.
Table 2 various performance data of the batteries prepared in example 2 and comparative example 2
| Open circuit voltage (V) | Filling factor (%) | Current Density (mA cm) -2 ） | Photoelectric conversion efficiency (%) | |
| Example 2 | 1.08 | 71.42 | 22.01 | 17.06 |
| Comparative example 2 | 1.07 | 68.23 | 21.33 | 15.63 |
Example 3
5ml of diethyl ether was added to the vessel as an anti-solvent.
10cm × 10cm FTO glass (glass thickness is 1mm, and thickness of FTO film layer is 200 nm); a NiOx film (thickness 20 nm) on the surface of the substrate; the NiOx film was treated with oxygen plasma for 10min at 2kW.
Preparing 20 mass percent perovskite layer precursor solution A (CsBr: 0.15mol/L, pbI) 2 :1mol/L, FAI:0.85 mol/L), and the solvent is DMF + DMSO (volume ratio 8: 2) (ii) a Uniformly spreading 400 mu L of solution A on the surface of the NiOx film treated by the oxygen plasma, and preparing by using a 400 mu m scraper to obtain a perovskite precursor solution film; transferring the perovskite precursor solution film to a vacuum cavity (0.3 m multiplied by 0.2 m), quickly vacuumizing to 7Pa, opening an anti-solvent valve, releasing the anti-solvent, keeping for 1min, then heating the film to 150 ℃, and preserving heat for 10min to obtain the perovskite film.
A C60 electron transport layer (40 nm) is evaporated on the surface of the prepared perovskite thin film.
Finally, the electron transport layer is transferred to a thermal evaporation device, and the vacuum degree reaches 1 × 10 -5 Condition of PaAnd then, copper electrodes (Cu) are evaporated to be 100nm thick to obtain the battery device.
Comparative example 3
Obtaining a battery device by using the preparation method provided in embodiment 3; the difference lies in that: directly heating the perovskite precursor solution film to 150 ℃ without adopting vacuum anti-solvent annealing, and preserving the heat for 10min to obtain the perovskite film.
The performance data of the battery devices provided in example 3 and comparative example 3 are shown in table 3.
Table 3 each performance data of the batteries prepared in example 3 and comparative example 3
| Open circuit voltage (V) | Fill factor (%) | Current Density (mA cm) -2 ） | Photoelectric conversion efficiency (%) | |
| Example 2 | 1.02 | 71.58 | 21.82 | 15.92 |
| Comparative example 2 | 0.98 | 63.48 | 21.45 | 13.30 |
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (5)
1. A preparation method of a perovskite thin film comprises the following steps:
a) Placing the perovskite precursor solution on the surface of a substrate to obtain a perovskite precursor solution film;
b) Carrying out vacuum anti-solvent annealing on the perovskite precursor solution film obtained in the step a) to obtain a perovskite film; the vacuum anti-solvent annealing process specifically comprises the following steps:
transferring the perovskite precursor solution film to a vacuum cavity, vacuumizing, introducing an anti-solvent to realize vaporization, keeping for 0.5-2 min, and then annealing to obtain the perovskite film; the dosage of the anti-solvent is more than 1ml/m 3 (ii) a The vacuum degree of the vacuumizing is less than 100Pa; the temperature of the annealing treatment is 70-200 ℃, and the time is 3-60 min.
2. The method according to claim 1, wherein the perovskite precursor solution is placed on the surface of the substrate in step a) by spin coating, blade coating, slot coating or spray coating.
3. The method according to claim 1, wherein the perovskite precursor solution thin film in step a) has ABX 3 A crystal structure of the form (A) in which A is an organic cation and/or an inorganic cation, BIs a divalent metal ion, X is I - 、Br - And Cl - One or more of (a).
4. The production method according to claim 3, wherein the positive divalent metal ion is Pb 2+ Or Sn 2+ 。
5. The method of claim 1, wherein the anti-solvent in step b) is one or more selected from chlorobenzene, diethyl ether, acetone, toluene, ethyl acetate, and chloroform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211264959.7A CN115360307B (en) | 2022-10-17 | 2022-10-17 | Preparation method of perovskite thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211264959.7A CN115360307B (en) | 2022-10-17 | 2022-10-17 | Preparation method of perovskite thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115360307A CN115360307A (en) | 2022-11-18 |
| CN115360307B true CN115360307B (en) | 2023-01-24 |
Family
ID=84007689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211264959.7A Active CN115360307B (en) | 2022-10-17 | 2022-10-17 | Preparation method of perovskite thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115360307B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN209619436U (en) * | 2019-01-22 | 2019-11-12 | 苏州协鑫纳米科技有限公司 | Device based on degassing method preparation large area perovskite thin film |
| CN113809239A (en) * | 2021-08-25 | 2021-12-17 | 佛山仙湖实验室 | Perovskite thin film and anti-solvent preparation method of photoelectric detector containing perovskite thin film |
| CN113948645A (en) * | 2021-10-15 | 2022-01-18 | 吉林大学 | Perovskite battery preparation method |
| CN114597311A (en) * | 2022-03-04 | 2022-06-07 | 昆山协鑫光电材料有限公司 | Perovskite thin film, perovskite solar cell and preparation method thereof |
| CN114808124A (en) * | 2022-03-16 | 2022-07-29 | 暨南大学 | Preparation method of mixed halide perovskite single crystal and polycrystalline film |
-
2022
- 2022-10-17 CN CN202211264959.7A patent/CN115360307B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN209619436U (en) * | 2019-01-22 | 2019-11-12 | 苏州协鑫纳米科技有限公司 | Device based on degassing method preparation large area perovskite thin film |
| CN113809239A (en) * | 2021-08-25 | 2021-12-17 | 佛山仙湖实验室 | Perovskite thin film and anti-solvent preparation method of photoelectric detector containing perovskite thin film |
| CN113948645A (en) * | 2021-10-15 | 2022-01-18 | 吉林大学 | Perovskite battery preparation method |
| CN114597311A (en) * | 2022-03-04 | 2022-06-07 | 昆山协鑫光电材料有限公司 | Perovskite thin film, perovskite solar cell and preparation method thereof |
| CN114808124A (en) * | 2022-03-16 | 2022-07-29 | 暨南大学 | Preparation method of mixed halide perovskite single crystal and polycrystalline film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115360307A (en) | 2022-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6685896B2 (en) | Solar cell and manufacturing method thereof | |
| Sun et al. | State‐of‐the‐art electron‐selective contacts in perovskite solar cells | |
| CN107369766B (en) | Perovskite solar cell with high-quality metal oxide electron transport layer and preparation method thereof | |
| CN109728166B (en) | Methylamine lead iodine perovskite solar cell containing organic luminescent micromolecular interface modification layer | |
| CN108807694B (en) | Flat perovskite solar cell with ultralow temperature stability and preparation method thereof | |
| CN110176539B (en) | Preparation method of efficient perovskite solar cell with stable full-spectrum light | |
| CN107464882A (en) | A kind of organic inorganic hybridization perovskite solar cell and preparation method thereof | |
| Jiang et al. | Influences of deposition and post-annealing temperatures on properties of TiO2 blocking layer prepared by spray pyrolysis for solid-state dye-sensitized solar cells | |
| CN111129318A (en) | Tungsten-doped oxide perovskite solar cell and preparation method thereof | |
| KR102080748B1 (en) | A method for manufacturing a high-quality perovskite photoactive layer thin film and a perovskite solar cell | |
| CN107994123B (en) | Perovskite type solar cell and preparation method thereof | |
| CN111192964B (en) | Perovskite quantum dot solar cell and preparation method thereof | |
| CN113637355A (en) | Perovskite solution with controllable and adjustable operation time window, battery, preparation method and application | |
| CN115360307B (en) | Preparation method of perovskite thin film | |
| CN112126425A (en) | Perovskite thin film and manufacturing method and application thereof | |
| CN111540791A (en) | Solar cell and manufacturing method thereof | |
| CN116801652A (en) | Crystalline silicon perovskite laminated solar cell and preparation method thereof | |
| CN111403606A (en) | Lycopene-doped perovskite solar cell and preparation method thereof | |
| CN105591031B (en) | A kind of binary channels parallel connection type organo-mineral complexing solar cell based on first crystalline state porous nano germanium film | |
| CN113745405A (en) | Preparation method of perovskite thin film and solar cell thereof | |
| CN111092156B (en) | Perovskite solar cell and preparation method thereof | |
| CN114107960B (en) | SnO preparation by using stannous oxalate as raw material2Method for forming electron transport layer film | |
| CN110518129B (en) | Preparation method of high-transmittance buffer layer structure for transparent electrode of laminated battery | |
| CN113675347B (en) | Method for preparing 2D/3D organic-inorganic hybrid perovskite solar cell | |
| CN117222236A (en) | Large-area perovskite solar cell based on multi-carboxyl potassium salt modification |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |