CN115354310B

CN115354310B - Plasma enhanced chemical vapor deposition device and deposition method thereof

Info

Publication number: CN115354310B
Application number: CN202211194993.1A
Authority: CN
Inventors: 戴建波; 刘龙龙
Original assignee: Jiangsu Yiwen Microelectronics Technology Co Ltd; Advanced Materials Technology and Engineering Inc
Current assignee: Wuxi Yiwen Microelectronics Technology Co ltd; Jiangsu Yiwen Microelectronics Technology Co Ltd
Priority date: 2022-09-29
Filing date: 2022-09-29
Publication date: 2022-12-30
Anticipated expiration: 2042-09-29
Also published as: CN115354310A

Abstract

The invention discloses a plasma enhanced chemical vapor deposition device and a deposition method thereof, and relates to the technical field of semiconductors. The plasma enhanced chemical vapor deposition device comprises a deposition chamber, a cover plate, a measuring mechanism, a heating plate, a gas spraying plate and a lifting mechanism. The apron lid is located on the deposit room, and encloses into the deposit cavity jointly, elevating system installs on the apron, and is connected with jet-propelled dish, and jet-propelled dish sets up in the top of heating plate parallelly at interval, and elevating system is used for driving jet-propelled dish along predetermineeing the direction and is close to or keeps away from the heating plate, and the measuring mechanism centre gripping is between jet-propelled dish and heating plate, and measuring mechanism is used for measuring the actual interval between jet-propelled dish and the heating plate under plasma enhanced chemical vapor deposition device is in operating temperature. The plasma enhanced chemical vapor deposition device provided by the invention can accurately measure and adjust the distance between the air jet disc and the heating disc at the working temperature, ensure the uniformity of a deposited film layer and improve the product quality.

Description

Plasma enhanced chemical vapor deposition device and deposition method thereof

Technical Field

The invention relates to the technical field of semiconductors, in particular to a plasma enhanced chemical vapor deposition device and a deposition method thereof.

Background

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a technique that uses radio frequency to ionize a gas containing atoms of a thin film component and locally form a plasma to deposit a desired film on a wafer. In the plasma enhanced chemical vapor deposition process, the distance between the gas spraying disc and the heating disc is an important process parameter, and the uniformity of a deposited film layer and the product quality are directly influenced. Now, measure the interval between jet-propelled dish and the heating plate and all go on under the normal atmospheric temperature state of unpacking, the actual interval that leads to measuring the interval that obtains and among the deposition process has certain difference (deposition process goes on under high temperature, high temperature can cause the thermal expansion to lead to the position to change to equipment spare part, furthermore, the installation accuracy is not in place and different installer or same installer install and all can lead to the position to change not the same time), so, can't carry out the accurate adjustment to the interval between jet-propelled dish and the heating plate, it is inhomogeneous to lead to the film forming, the film forming can not reach the technological requirement scheduling problem, influence product quality.

In addition, in the prior art, only the possible problems can be predicted from the deposition film forming effect of the equipment, and the process or the equipment is adjusted, but the adjusted equipment is difficult to ensure completely consistent installation accuracy, so that the actual conditions of installation position change, temperature difference (influence of thermal expansion, cold contraction and the like on the equipment position at high temperature) and the like caused by different installation conditions are difficult to accurately obtain process parameters such as the distance between the air jet disc and the heating disc in the deposition process under the closed box state of the deposition equipment, and the deposition process cannot be effectively adjusted, so that the film forming uniformity is influenced.

In view of the above, it is important to design a plasma enhanced chemical vapor deposition apparatus and a deposition method thereof, which can accurately measure the distance between the gas nozzle plate and the heating plate at the deposition operating temperature (high temperature).

Disclosure of Invention

The invention aims to provide a plasma enhanced chemical vapor deposition device which can accurately measure and adjust the distance between an air jet disc and a heating disc at a working temperature, ensure the uniformity of a deposited film and improve the product quality.

Another objective of the present invention is to provide a deposition method for a plasma enhanced chemical vapor deposition apparatus, which can accurately measure and adjust the distance between the gas spraying plate and the heating plate at the operating temperature, so as to ensure the uniformity of the deposited film and improve the product quality.

The invention is realized by adopting the following technical scheme.

The utility model provides a plasma reinforcing chemical vapor deposition device, including the deposit room, a cover plate, measuring mechanism, the heating plate, jet-propelled dish and elevating system, the apron lid is located on the deposit room, and enclose into the deposit cavity jointly, elevating system installs on the apron, and be connected with jet-propelled dish, jet-propelled dish parallel interval sets up in the top of heating plate, heating plate and jet-propelled dish all set up in the deposit cavity, elevating system is used for driving jet-propelled dish along predetermineeing the direction and is close to or keeps away from the heating plate, the measuring mechanism centre gripping is between jet-propelled dish and heating plate, measuring mechanism is used for measuring the actual interval between jet-propelled dish and the heating plate under plasma reinforcing chemical vapor deposition device is in operating temperature.

Optionally, the measuring mechanism includes a first measuring table and a second measuring table, the second measuring table has a first sliding groove along a preset direction, and the first measuring table is slidably disposed in the first sliding groove.

Optionally, the measuring mechanism further comprises a bolt, a first elastic piece and a supporting block, the second measuring table is provided with a threaded hole and a abdicating groove, the axial direction of the threaded hole is perpendicular to the preset direction, the threaded hole is communicated with the first sliding groove through the abdicating groove, the bolt is in threaded fit with the threaded hole, the supporting block is slidably arranged in the abdicating groove, one end of the first elastic piece is supported against the bolt, the other end of the first elastic piece is supported against the supporting block, and the supporting block is supported against the first measuring table.

Optionally, the measuring mechanism further includes a second elastic member, the first chute is provided with a first bottom wall, the second elastic member extends along the preset direction, one end of the second elastic member abuts against the first bottom wall, and the other end of the second elastic member abuts against the first measuring table.

Optionally, the deposition chamber is provided with an observation window, the first measurement table is provided with first scale marks along a preset direction, the second measurement table is provided with second scale marks along the preset direction, and the position of the observation window corresponds to the positions of the first scale marks and the second scale marks.

Optionally, the measuring mechanism further includes a third measuring table and a third elastic member, the third measuring table is provided with a second chute along the preset direction, the second measuring table is slidably disposed in the second chute, the second chute is provided with a second bottom wall, the third elastic member extends along the preset direction, one end of the third elastic member abuts against the second bottom wall, and the other end of the third elastic member abuts against the second measuring table.

Optionally, a stop block is arranged on the third measuring table and extends towards the second chute, the stop block is located at the top of the second chute, and a convex block is arranged on the second measuring table and used for abutting against the stop block.

Optionally, the plasma enhanced chemical vapor deposition device further comprises a gas concentration sensor, the top of the first measuring table is provided with a mounting groove, the gas concentration sensor is fixedly mounted in the mounting groove, and the gas concentration sensor is used for detecting the concentration of the process gas sprayed out of the gas spraying disc.

Optionally, the plasma enhanced chemical vapor deposition device further comprises a manipulator, the manipulator is connected with the measuring mechanism, and the manipulator is used for driving the measuring mechanism to move onto the heating plate when the cover plate is opened.

Optionally, the manipulator includes driving motor and swinging boom, and driving motor is provided with the output shaft, and the one end and the output shaft of swinging boom, the other end and measurement mechanism are connected, and the output shaft sets up with the swinging boom is perpendicular, and the swinging boom is on a parallel with the heating plate setting.

A deposition method of a plasma enhanced chemical vapor deposition device is used for using the plasma enhanced chemical vapor deposition device, and comprises the following steps: closing the cover plate, and heating the deposition cavity to make the plasma enhanced chemical vapor deposition device reach the working temperature; measuring the actual distance between the air jet disc and the heating disc by using a measuring mechanism; adjusting the position of the air injection disc by using a lifting mechanism so as to enable the actual distance to be equal to the preset distance; opening the cover plate, and moving the measuring mechanism away from the heating plate; and placing the wafer on the heating plate, closing the cover plate, and controlling the plasma enhanced chemical vapor deposition device to reach the working temperature again so as to deposit a film layer on the surface of the wafer.

The plasma enhanced chemical vapor deposition device and the deposition method thereof provided by the invention have the following beneficial effects:

the invention provides a plasma enhanced chemical vapor deposition device, wherein a cover plate is arranged on a deposition chamber in a covering mode and jointly forms a deposition cavity, a lifting mechanism is arranged on the cover plate and connected with an air jet plate, the air jet plate is arranged above a heating plate in parallel at intervals, the heating plate and the air jet plate are both arranged in the deposition cavity, the lifting mechanism is used for driving the air jet plate to be close to or far away from the heating plate along a preset direction, a measuring mechanism is clamped between the air jet plate and the heating plate, and the measuring mechanism is used for measuring the actual distance between the air jet plate and the heating plate when the plasma enhanced chemical vapor deposition device is at a working temperature. Compared with the prior art, the plasma enhanced chemical vapor deposition device provided by the invention adopts the lifting mechanism connected with the jet plate and the measuring mechanism clamped between the jet plate and the heating plate, so that the distance between the jet plate and the heating plate at the working temperature can be accurately measured and adjusted, the uniformity of a deposited film layer is ensured, and the product quality is improved.

The deposition method of the plasma enhanced chemical vapor deposition device provided by the invention can accurately measure and adjust the distance between the air injection disc and the heating disc at the working temperature, ensure the uniformity of the deposited film and improve the product quality.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a schematic structural diagram of a deposition method of a PECVD apparatus according to a first embodiment of the present invention;

FIG. 2 is an exploded view of a PECVD apparatus according to a first embodiment of the present invention;

FIG. 3 is a cross-sectional view of a PECVD apparatus according to a first embodiment of the present invention;

FIG. 4 is a schematic structural diagram of a measurement mechanism in a PECVD apparatus according to a first embodiment of the present invention;

FIG. 5 is a sectional view of a measuring mechanism in a PECVD apparatus according to a first embodiment of the invention;

FIG. 6 is a schematic structural diagram of a robot connected to a measuring mechanism in a PECVD apparatus according to a first embodiment of the present invention;

FIG. 7 is a cross-sectional view of a measuring mechanism in a PECVD apparatus according to a second embodiment of the present invention.

An icon: 100-plasma enhanced chemical vapor deposition apparatus; 110-a deposition chamber; 111-a viewing window; 120-a cover plate; 130-a measuring mechanism; 131-a first measuring station; 1311-first tick mark; 1312-mounting groove; 132-a second measuring station; 1321-a first runner; 1322-threaded holes; 1323-yielding slot; 1324-bumps; 1325-second tick mark; 1326-a first bottom wall; 133-bolt; 134-a first resilient member; 135-a holding block; 136-a third measuring station; 1361-a second chute; 1362-a second bottom wall; 1363-stop; 1364-third scale line; 137-a third elastic member; 138-a second elastic member; 140-heating plates; 150-jet disc; 160-a lifting mechanism; 170-gas concentration sensor; 180-a manipulator; 181-drive motor; 182-a rotating arm; 183-output shaft; 184-groove; 190-a support block; 200-depositing a cavity.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures.

In the description of the present invention, it should be noted that the terms "inside", "outside", "upper", "lower", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally put in use of products of the present invention, and are only for convenience of description and simplicity of description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "connected," "mounted," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Some embodiments of the invention are described in detail below with reference to the accompanying drawings. The features in the embodiments described below may be combined with each other without conflict.

First embodiment

Referring to fig. 1 to 3, an embodiment of the invention provides a plasma enhanced chemical vapor deposition apparatus 100 for depositing a film on a wafer to form a product. The distance between the air spraying disc 150 and the heating disc 140 can be accurately measured and adjusted at the working temperature (above 300 ℃), the uniformity of a deposited film layer is ensured, and the product quality is improved.

The plasma enhanced chemical vapor deposition apparatus 100 includes a deposition chamber 110, a cover plate 120, a measuring mechanism 130, a heating plate 140, a gas injection plate 150, a lifting mechanism 160, a gas concentration sensor 170, a robot 180, and a support block 190. The cover plate 120 covers the deposition chamber 110 and collectively defines a deposition cavity 200. Elevating system 160 installs on apron 120, and be connected with jet plate 150, jet plate 150 sets up in the top of heating plate 140 parallelly spaced, heating plate 140 and jet plate 150 all set up in deposition cavity 200, heating plate 140 is used for supplying the wafer to place and heats the wafer, jet plate 150 is used for the direction blowout process gas that is close to heating plate 140, with the deposit rete on the wafer, elevating system 160 is used for driving jet plate 150 along predetermineeing the direction and is close to or keep away from heating plate 140. The measuring mechanism 130 is clamped between the gas spraying disc 150 and the heating disc 140, so as to ensure that the measuring mechanism 130 generates a reading when being in a pressed state, the measuring mechanism 130 is used for measuring the actual distance between the gas spraying disc 150 and the heating disc 140 when the plasma enhanced chemical vapor deposition device 100 is at a working temperature, so that the lifting mechanism 160 adjusts the position of the gas spraying disc 150 (close to or far away from the heating disc 140) according to the actual distance, thereby realizing the adjustment of the distance between the gas spraying disc 150 and the heating disc 140, ensuring the uniformity of a deposited film layer and improving the product quality.

Specifically, the cover plate 120 is connected to an external elevating device (not shown), and the cover plate 120 can be raised or lowered by the elevating device to be away from or close to the deposition chamber 110, thereby opening or closing the deposition cavity 200. When the cover plate 120 opens the deposition cavity 200, the cover plate 120 drives the gas injection plate 150 to be away from the heating plate 140 through the lifting mechanism 160, so that the measuring mechanism 130 is exposed, and the measuring mechanism 130 is convenient to take and place; when the lid 120 closes the deposition cavity 200, the lid 120 drives the injector plate 150 to approach the heater plate 140 via the lifting mechanism 160, so as to hold the measuring mechanism 130 between the injector plate 150 and the heater plate 140, thereby facilitating the distance measurement.

In a similar way, the concentration of the process gas is also influenced by the high temperature, the gas concentration sensor 170 is fixedly mounted on the measuring mechanism 130, and the gas concentration sensor 170 is used for detecting the concentration of the process gas sprayed out of the gas spraying disc 150, so that the concentration detection function of the process gas is realized, and the product quality is ensured. Specifically, if the concentration of the process gas is low, the flow rate of the process gas ejected from the gas-ejecting plate 150 is increased to increase the concentration of the process gas in the deposition cavity 200; if the concentration of the process gas is high, the flow rate of the process gas ejected from the showerhead 150 is adjusted to be small to reduce the concentration of the process gas in the deposition cavity 200.

Further, a manipulator 180 is connected to the measuring mechanism 130, and the manipulator 180 is configured to drive the measuring mechanism 130 to move onto the heating plate 140 when the cover plate 120 is opened, so as to implement a distance measuring function when the cover plate 120 is closed; the robot arm 180 is further configured to drive the measuring mechanism 130 to leave the heating plate 140 when the cover plate 120 is opened, and place the measuring mechanism on the supporting block 190, so as to yield the wafer, facilitate the wafer to be placed on the heating plate 140 for deposition, and prevent the measuring mechanism 130 from blocking the wafer. The support block 190 serves to support the measuring mechanism 130 when it is not in use, so as to prevent the robot arm 180 from being deformed due to the weight of the measuring mechanism 130 being carried for a long time.

Referring to fig. 4 to fig. 6, the measuring mechanism 130 includes a first measuring table 131, a second measuring table 132, a bolt 133, a first elastic member 134, a supporting block 135, a third measuring table 136, and a third elastic member 137. First chute 1321 has been seted up along the preset direction to second measuring stage 132, and first measuring stage 131 sets up in first chute 1321 slidably, and first measuring stage 131 can slide for first chute 1321 along the preset direction, and first chute 1321 can carry out spacing and direction to first measuring stage 131. Specifically, the preset direction is a vertical direction, the cover plate 120, the gas spray plate 150, and the heating plate 140 are all located on a horizontal plane, and the gas spray plate 150 moves downward in the preset direction to press the first measuring table 131 into the first chute 1321 in the process of closing the deposition cavity 200 by the cover plate 120.

It should be noted that the second measuring table 132 is provided with a threaded hole 1322 and a relief groove 1323, an axial direction of the threaded hole 1322 is perpendicular to the preset direction, the threaded hole 1322 is communicated with the first sliding groove 1321 through the relief groove 1323, the bolt 133 is in threaded fit with the threaded hole 1322, the abutting block 135 is slidably disposed in the relief groove 1323, one end of the first elastic member 134 abuts against the bolt 133, the other end abuts against the abutting block 135, the abutting block 135 abuts against the first measuring table 131, and the first elastic member 134 is always in a compressed state. Further, the first measuring table 131 and the second measuring table 132 slide relatively to each other, and wear is easily caused by frequent relative movement, and the measuring mechanism 130 is applied to a high-temperature (above 300 ℃) working environment in the deposition cavity 200, and the wear is further increased, which may cause the first measuring table 131 to fall down relative to the second measuring table 132 by gravity. The present embodiment can improve the friction between the first measuring table 131 and the second measuring table 132 by the elastic bidirectional compression function of the first elastic member 134, and avoid the undesirable relative sliding between the two measuring tables during positioning, thereby solving the problem of abrasion.

Specifically, when the bolt 133 is screwed with respect to the threaded hole 1322, the bolt 133 moves in a direction approaching the first sliding groove 1321 along the axial direction thereof, the elastic force of the first elastic member 134 increases, and the bolt 133 applies a holding force to the holding block 135 through the first elastic member 134, so that the holding block 135 is held on the peripheral surface of the first measuring table 131, thereby increasing the friction force between the holding block 135 and the first measuring table 131, generating a damping effect, preventing the first measuring table 131 from sliding downward with respect to the first sliding groove 1321 under the action of gravity, and improving the accuracy of the distance measurement. When the bolt 133 is loosened with respect to the threaded hole 1322, the bolt 133 moves in a direction away from the first slide slot 1321 along the axial direction thereof, the elastic force of the first elastic member 134 is reduced, and the friction force between the abutting block 135 and the first measuring table 131 is reduced, so that the first measuring table 131 can be taken out of the first slide slot 1321, thereby facilitating the maintenance and the part replacement of the measuring mechanism 130.

Further, a second sliding groove 1361 is formed in the third measuring platform 136 along the preset direction, the second measuring platform 132 is slidably disposed in the second sliding groove 1361, the second measuring platform 132 can slide relative to the second sliding groove 1361 along the preset direction, and the second sliding groove 1361 can limit and guide the second measuring platform 132. During the process in which the cover plate 120 closes the deposition cavity 200, the gas spray plate 150 moves downward in a predetermined direction to press the second measuring table 132 into the second chute 1361. Specifically, the second chute 1361 is provided with a second bottom wall 1362, the third elastic member 137 extends along the preset direction, one end of the third elastic member 137 abuts against the second bottom wall 1362, the other end of the third elastic member abuts against the second measuring table 132, the third elastic member 137 is always in a compressed state, the third elastic member 137 can apply an elastic force to the second measuring table 132 upwards along the preset direction to generate a damping effect, the second measuring table 132 is prevented from sliding downwards relative to the second chute 1361 under the action of gravity, the accuracy of distance measurement is improved, and the third elastic member 137 can drive the second measuring table 132 to slide upwards and reset relative to the second chute 1361.

In this embodiment, the third measuring platform 136 is provided with a stop block 1363 extending into the second chute 1361, the stop block 1363 is located at the top of the second chute 1361, the second measuring platform 132 is provided with a projection 1324, and the projection 1324 is used for abutting against the stop block 1363 to limit the limit position of the upward sliding of the second measuring platform 132, so as to prevent the second measuring platform 132 from falling out of the second chute 1361, and ensure the reliability of the measuring function.

It should be noted that the deposition chamber 110 is provided with an observation window 111, the first measurement platform 131 is provided with a first scale mark 1311 along the preset direction, the second measurement platform 132 is provided with a second scale mark 1325 along the preset direction, the third measurement platform 136 is provided with a third scale mark 1364 along the preset direction, the position of the observation window 111 corresponds to the positions of the first scale mark 1311, the second scale mark 1325 and the third scale mark 1364, a worker can obtain the readings of the first scale mark 1311, the second scale mark 1325 and the third scale mark 1364 through observation of the observation window 111, and the readings of the first scale mark 1311, the second scale mark 1325 and the third scale mark 1364 are added to obtain the distance between the gas spraying plate 150 and the heating plate 140.

Specifically, in the process of closing the deposition cavity 200 by the cover plate 120, the cover plate 120 drives the gas injection plate 150 to descend along the predetermined direction through the lifting mechanism 160, so as to apply pressure to the first measuring table 131, and partially press the first measuring table 131 into the first sliding slot 1321, in this process, since a certain friction force exists between the first measuring table 131 and the abutting block 135, it is also possible that the first measuring table 131 transmits the pressure to the second measuring table 132, the second measuring table 132 is partially pressed into the second sliding slot 1361, and the sum of the height of the first measuring table 131 exposed from the first sliding slot 1321, the height of the second measuring table 132 exposed from the second sliding slot 1361, and the height of the third measuring table 136 is equal to the distance between the gas injection plate 150 and the heating plate 140. When the PECVD apparatus 100 is at an operating temperature, the injector plate 150, the heating plate 140, and other components may thermally expand such that the distance between the injector plate 150 and the heating plate 140 decreases, and the first metrology stage 131 may further extend into the first chute 1321 and the second metrology stage 132 may further extend into the second chute 1361.

It should be noted that, in most cases, the measurement of the distance between the jet disc 150 and the heating disc 140 can be achieved only by using the first measuring table 131 and the second measuring table 132, and in this embodiment, the third measuring table 136 and the third elastic member 137 are additionally provided to increase the measurement range, so that the distance between the jet disc 150 and the heating disc 140 under different working conditions can be measured.

In this embodiment, a mounting groove 1312 is formed at the top of the first measuring table 131, the gas concentration sensor 170 is fixedly mounted in the mounting groove 1312, and the gas concentration sensor 170 is used for detecting the concentration of the process gas ejected from the gas ejection disk 150 so as to adjust the process gas. Specifically, the top surface of the gas concentration sensor 170 is flush with the top surface of the first measurement table 131 so as to measure the process gas concentration, and the influence on the distance measurement can be avoided.

The robot arm 180 includes a driving motor 181 and a rotating arm 182. The driving motor 181 is provided with an output shaft 183, one end of the rotating arm 182 is connected with the output shaft 183, the other end of the rotating arm 182 is connected with the measuring mechanism 130, the output shaft 183 is perpendicular to the rotating arm 182, the rotating arm 182 is parallel to the heating plate 140, and the driving motor 181 can drive the rotating arm 182 to rotate on the horizontal plane through the output shaft 183 so as to drive the measuring mechanism 130 to move onto the heating plate 140 or drive the measuring mechanism 130 to move onto the supporting block 190. Specifically, a groove 184 is formed at an end of the rotating arm 182, and the third measuring platform 136 is disposed in the groove 184 and is matched with the groove 184.

In this embodiment, the lifting mechanism 160 is a hydraulic cylinder, but the lifting mechanism 160 is not limited to this, and the lifting mechanism 160 may be a pneumatic cylinder, or may be a combination of a motor and a screw nut structure, and the type of the lifting mechanism 160 is not particularly limited.

The embodiment of the invention also provides a deposition method of the plasma enhanced chemical vapor deposition device, which is used for using the plasma enhanced chemical vapor deposition device 100 and comprises the following steps:

step S110: the cover plate 120 is closed and the deposition cavity 200 is heated to bring the pecvd apparatus 100 to an operating temperature.

In step S110, the robot 180 is first used to send the measuring mechanism 130 to the heating plate 140, and the lifting device is used to drive the cover plate 120 to cover the deposition chamber 110 to close the deposition cavity 200, in this process, the cover plate 120 drives the gas spraying plate 150 to descend through the lifting device 160 to press the measuring mechanism 130 on the heating plate 140, and the first measuring table 131 partially extends into the first sliding slot 1321 under the pressure of the gas spraying plate 150; the deposition cavity 200 is then heated to bring the pecvd apparatus 100 to an operating temperature, during which the showerhead 150, the heater plate 140, and other components may thermally expand to decrease the spacing between the showerhead 150 and the heater plate 140, and the first metrology stage 131 further extends into the first chute 1321 and the second metrology stage 132 may extend into the second chute 1361.

Step S120: the actual separation between the jet plate 150 and the heater plate 140 is measured using the measurement mechanism 130.

In step S120, the readings of the first scale 1311, the second scale 1325 and the third scale 1364 are manually observed and recorded through the observation window 111, and the readings of the first scale 1311, the second scale 1325 and the third scale 1364 are added to obtain an actual distance between the air jet plate 150 and the heating plate 140, so as to complete the measurement of the distance.

Further, in step S120, the process gas is ejected into the deposition cavity 200 by the gas ejection plate 150, and the gas concentration sensor 170 is mounted on the top of the first measurement stage 131, so that the gas concentration sensor 170 can detect the concentration of the process gas at the operating temperature, thereby completing the measurement of the gas concentration.

Step S130: the position of the jet plate 150 is adjusted by the elevating mechanism 160 so that the actual pitch is equal to the preset pitch.

It should be noted that, in step S130, a preset pitch is selected according to different wafer specifications and product requirements, a difference between the actual pitch and the preset pitch is calculated, and the lifting mechanism 160 is used to drive the jet plate 150 to ascend or descend according to the difference, so that the actual pitch between the jet plate 150 and the heating plate 140 is equal to the preset pitch, and the pitch adjustment is completed.

Further, in step S130, a preset gas concentration is selected according to different wafer specifications and product requirements, a difference between the actual gas concentration and the preset gas concentration is calculated, and the flow rate of the process gas ejected from the gas ejection plate 150 is adjusted up or down according to the difference, so that the actual concentration of the process gas ejected from the gas ejection plate 150 is equal to the preset gas concentration, thereby completing the adjustment of the gas concentration.

Step S140: the cover plate 120 is opened and the measuring mechanism 130 is moved away from the heating disk 140.

It should be noted that, in step S140, the lifting device is first used to lift the cover plate 120 to open the deposition cavity 200, and in the process, the cover plate 120 drives the gas injection plate 150 to lift through the lifting mechanism 160 to disengage from the measuring mechanism 130; the measurement mechanism 130 is then transferred to the backing block 190 by the robot 180 to yield the wafer.

Step S150: the wafer is placed on the heating plate 140, and the cover plate 120 is closed, and the pecvd apparatus 100 is controlled to reach the operating temperature again, so as to deposit a film on the surface of the wafer.

In step S150, the wafer is first transferred into the deposition cavity 200 and placed on the heating plate 140; subsequently, the cover plate 120 is closed again, and at this time, since the position of the jet plate 150 has been adjusted in step S130, it can be ensured that the distance between the jet plate 150 and the heating plate 140 at the operating temperature is equal to the preset distance; then, the deposition cavity 200 is heated to make the plasma enhanced chemical vapor deposition device 100 reach the working temperature; then, the gas-spraying disk 150 sprays the process gas onto the wafer to deposit a film on the surface of the wafer, and at this time, since the concentration of the process gas sprayed by the gas-spraying disk 150 has been adjusted in step S130, the concentration of the gas sprayed by the gas-spraying disk 150 at the working temperature can be ensured to be equal to the preset gas concentration, and the deposition process is completed.

In the plasma enhanced chemical vapor deposition apparatus 100 provided by the embodiment of the present invention, the cover plate 120 is disposed on the deposition chamber 110 and jointly encloses the deposition cavity 200, the lifting mechanism 160 is mounted on the cover plate 120 and connected to the gas injection plate 150, the gas injection plate 150 is disposed above the heating plate 140 in parallel and at intervals, the heating plate 140 and the gas injection plate 150 are both disposed in the deposition cavity 200, the lifting mechanism 160 is configured to drive the gas injection plate 150 to approach or depart from the heating plate 140 along a preset direction, the measuring mechanism 130 is clamped between the gas injection plate 150 and the heating plate 140, and the measuring mechanism 130 is configured to measure an actual distance between the gas injection plate 150 and the heating plate 140 when the plasma enhanced chemical vapor deposition apparatus 100 is at a working temperature. Compared with the prior art, the plasma enhanced chemical vapor deposition device 100 provided by the invention adopts the lifting mechanism 160 connected with the gas spraying disc 150 and the measuring mechanism 130 clamped between the gas spraying disc 150 and the heating disc 140, so that the distance between the gas spraying disc 150 and the heating disc 140 at the working temperature can be accurately measured and adjusted, the uniformity of a deposited film layer is ensured, and the product quality is improved. The deposition method of the plasma enhanced chemical vapor deposition device has good deposition effect and high product quality.

Further, the measuring mechanism 130 is also used for measuring the concentration of the process gas ejected from the gas ejection plate 150 when the plasma enhanced chemical vapor deposition apparatus 100 is at the operating temperature, and the uniformity of the deposited film layer is ensured by detecting and adjusting the concentration of the process gas, thereby further improving the product quality.

Second embodiment

Referring to fig. 7, an embodiment of the invention provides a pecvd apparatus 100, which is different from the first embodiment in that the measurement mechanism 130 further includes a second elastic member 138.

In this embodiment, the first sliding slot 1321 is provided with a first bottom wall 1326, the second elastic member 138 is extended and disposed along a preset direction, one end of the second elastic member 138 abuts against the first bottom wall 1326, the other end of the second elastic member abuts against the first measuring table 131, the second elastic member 138 is always in a compressed state, the second elastic member 138 can apply an elastic force to the first measuring table 131 upwards along the preset direction to generate a damping effect, the first measuring table 131 is prevented from sliding downwards relative to the first sliding slot 1321 under the action of gravity, the accuracy of distance measurement is improved, and the second elastic member 138 can rebound when the cover plate 120 is opened to drive the first measuring table 131 to slide upwards and reset relative to the first sliding slot 1321.

The beneficial effects of the plasma enhanced chemical vapor deposition apparatus 100 provided by the embodiment of the present invention are the same as those of the first embodiment, and are not described herein again.

The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A plasma enhanced chemical vapor deposition device is characterized by comprising a deposition chamber (110), a cover plate (120), a measuring mechanism (130), a heating plate (140), a gas spraying plate (150) and a lifting mechanism (160), wherein the cover plate (120) is arranged on the deposition chamber (110) in a covering mode and jointly encloses a deposition cavity (200), the lifting mechanism (160) is arranged on the cover plate (120) and connected with the gas spraying plate (150), the gas spraying plate (150) is arranged above the heating plate (140) in a parallel and spaced mode, the heating plate (140) and the gas spraying plate (150) are both arranged in the deposition cavity (200), the lifting mechanism (160) is used for driving the gas spraying plate (150) to be close to or far away from the heating plate (140) along a preset direction, the measuring mechanism (130) is clamped between the gas spraying plate (150) and the heating plate (140), and the measuring mechanism (130) is used for measuring the actual distance between the gas spraying plate (150) and the heating plate (140) when the plasma enhanced chemical vapor deposition device is at a working temperature;

the measuring mechanism (130) comprises a first measuring table (131) and a second measuring table (132), a first sliding chute (1321) is formed in the second measuring table (132) along the preset direction, and the first measuring table (131) is slidably arranged in the first sliding chute (1321);

the measuring mechanism (130) further comprises a bolt (133), a first elastic piece (134) and a supporting block (135), the second measuring table (132) is provided with a threaded hole (1322) and a abdicating groove (1323), the axial direction of the threaded hole (1322) is perpendicular to the preset direction, the threaded hole (1322) is communicated with the first sliding groove (1321) through the abdicating groove (1323), the bolt (133) is in threaded fit with the threaded hole (1322), the supporting block (135) is slidably arranged in the abdicating groove (1323), one end of the first elastic piece (134) supports against the bolt (133), the other end of the first elastic piece supports against the supporting block (135), and the supporting block (135) supports against the first measuring table (131);

the measuring mechanism (130) further comprises a second elastic piece (138), the first sliding groove (1321) is provided with a first bottom wall (1326), the second elastic piece (138) extends along the preset direction, one end of the second elastic piece (138) abuts against the first bottom wall (1326), and the other end of the second elastic piece (138) abuts against the first measuring table (131);

the measuring mechanism (130) further comprises a third measuring table (136) and a third elastic member (137), a second sliding groove (1361) is formed in the third measuring table (136) along the preset direction, the second measuring table (132) is slidably arranged in the second sliding groove (1361), a second bottom wall (1362) is arranged in the second sliding groove (1361), the third elastic member (137) extends along the preset direction, one end of the third elastic member (137) abuts against the second bottom wall (1362), and the other end of the third elastic member (137) abuts against the second measuring table (132);

the plasma enhanced chemical vapor deposition device further comprises a gas concentration sensor (170), a mounting groove (1312) is formed in the top of the first measuring table (131), the gas concentration sensor (170) is fixedly mounted in the mounting groove (1312), and the gas concentration sensor (170) is used for detecting the concentration of process gas sprayed out of the gas spraying disc (150).

2. The pecvd apparatus according to claim 1, wherein the deposition chamber (110) is opened with an observation window (111), the first measuring table (131) is provided with a first scale line (1311) along the preset direction, the second measuring table (132) is provided with a second scale line (1325) along the preset direction, and the position of the observation window (111) corresponds to the positions of the first scale line (1311) and the second scale line (1325).

3. The pecvd apparatus according to claim 1, wherein the third measuring table (136) is provided with a stop block (1363) extending into the second chute (1361), the stop block (1363) being located at the top of the second chute (1361), and the second measuring table (132) is provided with a projection (1324), the projection (1324) being configured to abut against the stop block (1363).

4. The pecvd apparatus of claim 1, further comprising a robot (180), the robot (180) being connected to the measuring mechanism (130), the robot (180) being configured to move the measuring mechanism (130) onto the heater tray (140) when the lid (120) is opened.

5. The PECVD apparatus as recited in claim 4, wherein the robot (180) comprises a driving motor (181) and a rotating arm (182), the driving motor (181) is provided with an output shaft (183), one end of the rotating arm (182) is connected with the output shaft (183), the other end is connected with the measuring mechanism (130), the output shaft (183) is arranged perpendicular to the rotating arm (182), and the rotating arm (182) is arranged parallel to the heating plate (140).

6. A deposition method for a plasma enhanced chemical vapor deposition apparatus, for using the plasma enhanced chemical vapor deposition apparatus according to any one of claims 1 to 5, comprising:

closing the cover plate (120) and heating the deposition cavity (200) to bring the plasma enhanced chemical vapor deposition device to a working temperature;

measuring the actual distance between the jet plate (150) and the heating plate (140) by using the measuring mechanism (130);

adjusting the position of the jet disc (150) by using the lifting mechanism (160) so that the actual interval is equal to a preset interval;

opening the cover plate (120) and moving the measuring mechanism (130) away from the heating plate (140);

and placing the wafer on the heating plate (140), closing the cover plate (120), and controlling the plasma enhanced chemical vapor deposition device to reach the working temperature again so as to deposit a film layer on the surface of the wafer.