CN115347375A - Electronic beam scanning high-power microwave flat reflective array antenna - Google Patents
Electronic beam scanning high-power microwave flat reflective array antenna Download PDFInfo
- Publication number
- CN115347375A CN115347375A CN202210779734.9A CN202210779734A CN115347375A CN 115347375 A CN115347375 A CN 115347375A CN 202210779734 A CN202210779734 A CN 202210779734A CN 115347375 A CN115347375 A CN 115347375A
- Authority
- CN
- China
- Prior art keywords
- dielectric layer
- power microwave
- beam scanning
- metal film
- array antenna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/44—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
- H01Q3/46—Active lenses or reflecting arrays
Landscapes
- Aerials With Secondary Devices (AREA)
Abstract
The invention relates to the technical field of microwave and millimeter wave antennas, and discloses a high-power microwave flat reflective array antenna for electronic beam scanning. The invention solves the problems that the high-power microwave antenna in the prior art is difficult to realize polarized reconfigurable electronic beam scanning and the like.
Description
Technical Field
The invention relates to the technical field of microwave and millimeter wave antennas, in particular to a high-power microwave flat-plate reflective array antenna for electronic beam scanning.
Background
Key technologies which are difficult to overcome by high-power microwaves, such as light weight, high power capacity and rapid electronic beam scanning, are gradually new requirements for the high-power microwaves from an experimental stage to an application stage due to the instantly changing information countermeasure situation in recent years. The flat-panel reflective array antenna has the advantages of a reflector antenna and a phased array antenna in the aspects of high gain and flexible beam scanning, and is light in size and convenient to integrate. The antenna acts as a "window" for high power microwave energy output, directly affecting the information countermeasure effect.
The traditional high-power microwave antenna improves the power capacity by sacrificing the volume, so that the application scene of high-power microwave is limited. The flat reflective array is composed of the same reflective array units, and the gain can be improved in a splicing mode. On the other hand, the problem that the medium is easy to generate the medium breakdown phenomenon under the irradiation of the high-power microwave naturally exists, so that the low-power switches such as PIN, MEMS and the like are difficult to realize the electronic beam scanning function under the high-power microwave. The reflective array unit based on magnetic resonance has high power capacity, and the plasma switch state behind the reflective unit can be controlled to adjust the reflection phase of each reflective array unit so as to realize the control of beam direction. However, in the prior art, the high-power microwave antenna has difficulty in realizing electronic beam scanning with reconfigurable polarization.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a high-power microwave flat-plate reflective array antenna for electronic beam scanning, which solves the problems that the high-power microwave antenna in the prior art is difficult to realize polarized reconfigurable electronic beam scanning and the like.
The technical scheme adopted by the invention for solving the problems is as follows:
a high-power microwave flat reflection array antenna for electronic beam scanning comprises a high-power microwave filter, a plasma switch layer, a high-power microwave space phase shifter and a ground plate which are sequentially connected from top to bottom; the high-power microwave refers to microwave with the frequency range of 500 MHz-300 GHz and the peak power higher than 1 MW.
As a preferred technical scheme, the high-power microwave filter comprises a first upper dielectric layer, a first metal film and a first lower dielectric layer which are sequentially connected from top to bottom, wherein the first upper dielectric layer and the first lower dielectric layer are both made of positive dielectric constant materials, and the first metal film is made of negative dielectric constant materials.
As a preferred technical scheme, the high-power microwave spatial phase shifter comprises a second upper dielectric layer, a second metal film and a second lower dielectric layer which are sequentially connected from top to bottom, wherein the second upper dielectric layer and the second lower dielectric layer are both made of positive dielectric constant materials, and the second metal film is made of negative dielectric constant materials.
As a preferred technical scheme, a plurality of through holes are formed in the first metal film and the second metal film.
As a preferred technical scheme, a plurality of round through holes are formed in the first metal film and the second metal film.
As a preferable technical scheme, the thicknesses of the first upper dielectric layer, the first lower dielectric layer, the second upper dielectric layer and the second lower dielectric layer are all adjustable.
As a preferable technical scheme, the plasma switch layer comprises a plurality of plasma switches and a direct current power supply, each plasma switch comprises two cross-shaped cross-connected vacuum quartz tubes, each vacuum quartz tube is provided with an anode and a cathode, and the anode and the cathode of one vacuum quartz tube are respectively and electrically connected with the direct current power supply to form a loop.
As a preferable technical scheme, a plurality of plasma switches are on the same straight line, and the distance between every two adjacent plasma switches is equal.
As a preferred technical solution, the first upper dielectric layer, the first lower dielectric layer, the second upper dielectric layer and the second lower dielectric layer are made of aluminum oxide materials.
As a preferable technical solution, the first metal film and the second metal film are both copper thin films.
Compared with the prior art, the invention has the following beneficial effects:
the frequency selection surface of the invention adopts a sandwich structure consisting of double positive dielectric constant layers and a circular perforated metal film interlayer, has the characteristics of wide bandwidth and wide angle and supporting dual polarization anti-reflection, and can obtain 180-degree reflection phase shift amount when used for spatial phase shift. The equivalent dielectric constant of this structure is about 7.7, and the phase retardation characteristic of the slow wave structure is provided, so that a cross section lower than that of the air phase shifter can be realized. The sandwich structure works in a magnetic resonance mode, reduces the concentration degree of an electric field in the structure, and has higher power capacity. When the switch array based on the plasma technology works, vacuum breakdown plasma can be generated in the vacuum quartz tube 10, and the control of the propagation path of high-power microwaves in the reflective array unit is realized by controlling the on-off of a circuit, so that the phase adjustment of the high-power microwave reflective array can be obtained, and the problem that the high-power microwave antenna is difficult to realize polarized reconfigurable electronic beam scanning is solved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural diagram of a magnetic resonance type sandwich metamaterial structure according to the present invention;
FIG. 3 is a schematic diagram of transmission coefficients of a magnetic resonance type sandwich metamaterial structure under the irradiation of TE and TM waves;
FIG. 4 is a schematic diagram of a dual polarized plasma switch according to the present invention;
FIG. 5 is a schematic diagram of the working principle of the present invention;
FIG. 6 is a simulation result of the graph of the present invention;
fig. 7 is a simulation analysis diagram of beam scanning performance according to the present invention.
Reference numbers and corresponding part names in the drawings: 1. a first upper dielectric layer, 2, a first metal film, 3, a first lower dielectric layer, 4, a plasma switch, 5, a direct current power supply, 6, a second upper dielectric layer, 7, a second metal film, 8, a second lower dielectric layer, 9, a grounding plate, 10, a vacuum quartz tube, 11, an anode, 12 and a cathode.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the present invention is not limited to these examples.
Example 1
As shown in fig. 1 to 7, the present invention is based on a plasma reconfigurable technology, and can realize the function of electronic beam scanning on a flat reflective array antenna, and in combination with a magnetic resonance reflective array unit with high power capacity, the present invention has the advantages of simple structure, low profile height, and high integration level.
The unit of the electronic beam scanning high-power microwave flat plate reflective array antenna comprises a wide-bandwidth angular frequency selection surface (a first upper dielectric layer 1, a first metal film 2 and a first lower dielectric layer 3) with a sandwich structure (a positive dielectric constant dielectric interlayer and a metal intermediate layer), a plasma switch 4 (a vacuum quartz tube 10 and a direct-current power supply 5), a sandwich structure (a second upper dielectric layer 6, a second metal film 7 and a second lower dielectric layer 8) and a ground plate 9, wherein the four layers of structures are arranged from top to bottom. The first metal film 2 and the second metal film 7 preferably have circular perforated metal films. The first metal film 2 and the second metal film 7 are preferably thin metal films with a thickness of less than one tenth of the operating wavelength, and more preferably 0.1mm. The dc power supply 5 is preferably a high voltage dc power supply capable of outputting 24kV at maximum, which is 800 times the input voltage.
Further, the thicknesses of the upper dielectric layer 1 and the lower dielectric layer 3 are the same, the thicknesses of the upper dielectric layer 6 and the lower dielectric layer 8 are the same, and the adopted material is aluminum oxide.
Further, the thickness of the copper metal film used for the first metal film 2 and the second metal film 7 is 0.1mm.
Further, the plasma switch 4 adopts a single anode structure, two ends of the plasma switch are respectively connected with an anode and a vacuum pump, a side fork is connected with a cathode, and the anode and the cathode (the anode 11 and the cathode 12) are connected with the anode and the cathode of the direct current power supply.
Further, the overall section height of the array antenna is 0.28 lambda, which is the working wavelength, and a low-section structure is realized.
Furthermore, the frequency selective surface and space phase shifter of the antenna is composed of a sandwich structure, the structure is respectively composed of an upper dielectric layer (a first upper dielectric layer 1 or a first lower dielectric layer 3), a circular perforated metal film (a first metal film 2 or a second metal film 7) and a lower dielectric layer (a second upper dielectric layer 6 or a second lower dielectric layer 8) from top to bottom, the antenna works in a magnetic resonance mode, the electric field concentration degree is reduced, the problem of dielectric breakdown is avoided, and the antenna has high power capacity.
The frequency selection surface of the high-power microwave flat-plate reflective array antenna for electronic beam scanning adopts a sandwich structure formed by double positive dielectric constant layers and a circular perforated metal film interlayer, has the characteristics of wide bandwidth angle and dual polarization anti-reflection support, and can obtain 180-degree reflection phase shift quantity when used for spatial phase shift. The equivalent dielectric constant of this structure is about 7.7, and the phase retardation characteristic of the slow wave structure is provided, so that a cross section lower than that of the air phase shifter can be realized. The sandwich structure works in a magnetic resonance mode, reduces the concentration degree of an electric field in the structure, and has higher power capacity. When the switch array based on the plasma technology works, vacuum breakdown plasma can be generated in the vacuum quartz tube 10, and the control of the propagation path of high-power microwaves in the reflective array unit is realized by controlling the on-off of a circuit, so that the phase adjustment of the high-power microwave reflective array can be obtained, and the problem that the high-power microwave antenna is difficult to realize polarized reconfigurable electronic beam scanning is solved.
Example 2
As shown in fig. 1 to 7, as a further optimization of embodiment 1, on the basis of embodiment 1, the present embodiment further includes the following technical features:
as shown in fig. 1, the high-power microwave dual-polarized planar reflective array antenna unit comprises a high-power microwave filter, a dual-polarized plasma switch, a high-power microwave spatial phase shifter and a ground plate, which are stacked from top to bottom. The magnetic resonance type sandwich metamaterial structure forming the high-power microwave space filter and the high-power microwave space phase shifter is characterized in that 99 aluminum oxide materials are used as outer layers of media, and circular perforated metal films are used as interlayers. The thickness of the circular perforated metal film is 0.1016mm, and the circular holes are arranged on the metal film in a periodic mode. The dual-polarized plasma switch 4 is a row of low-voltage argon direct-current discharging cross-shaped vacuum quartz tubes 10 which are arranged in parallel at intervals, and an anode 11 and a cathode 12 of each cross-shaped vacuum quartz tube 10 are respectively connected with a positive pole and a negative pole of the direct-current power supply 5.
When the electromagnetic wave propagates in the two dielectric materials and simultaneously meets impedance and phase matching, a zero reflection condition is established, a condition of electromagnetic wave full transmission is achieved, and the electromagnetic wave realizes full transmission in a sandwich structure of a positive dielectric constant material (DPS) -negative dielectric constant (ENG) material-positive dielectric constant material (DPS-ENG-DPS, DED).
In high power microwave applications, it is always desirable to avoid electric field concentrations to reduce the probability of breakdown, requiring a more uniform electric field amplitude field inside the device. According to the transmission line theory, if the DPS material is arranged on two sides of the interface of the ENG material, due to the limitation of boundary conditions, the gradient of the magnetic field is not changed when the electromagnetic field passes through the interface of the ENG material, namely the original change trend of the magnetic field is kept to enter the next layer of material, so that the sandwich structure with the magnetic resonance tunneling characteristic has the potential of high-power microwave application.
The antenna in this embodiment operates in the X band with a center operating frequency of 9.375GHz.
Preferably, the circular perforated metal film can work in orthogonal linear polarization and circular polarization plane waves, and the application range of the circular perforated metal film is expanded.
Preferably, the frequency selective surface and spatial phase shifter using the sandwich structure has advantages of high power capacity and low profile.
Preferably, the plasma switch is used as a regulating mechanism for realizing beam pointing reconstruction, and has higher power capacity compared with a MEMS (micro-electromechanical system), PIN (personal identification number) and other switching devices.
The composition of the sandwich structure in this embodiment is shown in fig. 2, and mainly includes an upper layer medium, a circular perforated metal film, and a lower layer medium. By changing the thickness h of the sandwich structure DPS And the hole array period rENG of the circular perforated metal film is used for regulating and controlling the electromagnetic property. 99 alumina medium with high heat resistance and insulativity is adopted as DPS material (dielectric constant epsilon) DPS A magnetic permeability μ of 9.9 DPS 1) and the metal film adopts copper metal and has the thickness of 0.1mm. The frequency selective surface and the spatial phase shifter in this embodiment both adopt a sandwich structure as shown in fig. 2. The circular through holes in the structure simultaneously support the enhanced transmission of TE and TM waves, the multi-polarization work can be realized, and the transmission coefficient curve is shown in figure 3; change the upper and lower dielectric layer thickness h of the sandwich structure DPS Transmission phase with h DPS Is changed, therebyThe reflection phase can be changed by 360 degrees. In this example, as a frequency selective surface and a spatial phase shifter, respectively.
As a preferred mode, the antenna provided by the invention adopts a plasma reconfigurable mode to regulate and control the beam direction, and the electronic beam scanning function of the high-power microwave antenna is realized. Since the plasma can be regarded as a medium, the derivation difficulty in studying the propagation of the electromagnetic wave in the plasma is great, and in order to simplify the practical consideration, only the interaction process between the electromagnetic wave and the non-magnetized plasma is considered, so that the propagation characteristic of the electromagnetic wave propagating in the non-magnetized uniform plasma can be determined by the following formula
In the formula, omega p Is the angular frequency of the plasma, n e For the electron density, e is the charge amount of the electron, and m is the electron mass. From the equations (2) and (3), when the plasma angular frequency ω is reached p When the wave number rises, the wave number of the incident electromagnetic wave falls; when the working frequency of the incident electromagnetic wave is far less than omega p When the wave number is negative when the electromagnetic wave is incident, the plasma can be regarded as an ideal conductor. Considering that the argon gas under vacuum breakdown excitation has the simplest particle collision and chemical reaction formula, the example adopts a low-pressure argon direct current discharge mode as an operation mode of generating plasma by a reconfigurable switch. The interaction process of the incident electromagnetic wave and the plasma is adjusted by switching the on-off of the direct-current power supply, so that the control of the reflection phase of the incident electromagnetic wave is realized. The plasma switch 4 is schematically shown in fig. 4.
Fig. 5 is a schematic diagram of the working principle of the electronic beam scanning high-power microwave flat reflective array antenna (including a unit aperture surface a, a high-power microwave spatial filter b, a dual-polarized plasma switch c, a high-power microwave spatial phase shifter d, and a ground plate e). Assuming that the incident wave is a TE/TM wave, the cross-shaped vacuum quartz tubes 10 of the dual-polarized plasma switch 4 are respectively vertically arranged along the polarization direction of the TE/TM wave.
The state "on" is the case where the dc power supply 5 is in the on state, and the plasma is present in the vacuum quartz tube 10 and reaches a sufficient plasma density. Then, the dc power supply is turned off, so that no plasma exists in the vacuum quartz tube 10. Because the reflection phase of the incident wave is controlled by the switching state of the direct-current power supply, the phase shift amount of the space phase shifter d with the reflection phase difference of two states being two times can realize the reflection phase adjustment of 0 and 180 degrees. As shown in fig. 6, simulation and test results of the high power microwave flat reflective array antenna unit with electronic beam scanning show that the reflective array unit has a 1-bit phase shifting capability.
In simulation, the maximum electric field amplitude of the antenna of the invention at the central frequency is 3254V/m, the electric field breakdown threshold value in the air is known to be 3MV/m at the working frequency of 10GHz, and the power capacity of the array antenna of the invention can be calculated to be more than 1GW/m 2 。
As shown in fig. 6, simulation and test results of the high-power microwave flat plate reflective array antenna unit show that the reflective array unit can realize 180-degree reflective phase adjustment capability and has a 1-bit phase shift function.
The simulation result of the electronic beam scanning performance of the high-power microwave flat-panel reflective array is shown in fig. 7, and the array scale is 10 × 10. The adjustment of the phase distribution of the reflector array is obtained by controlling the working state of the plasma switch array, and the main beam can scan to about +/-40 degrees along an E surface (the direction parallel to the plasma switch array) or an H surface.
As described above, the present invention can be preferably realized.
In the description of the present invention, it should be noted that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are merely for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element may be in an orientation as much as possible.
All features disclosed in all embodiments in this specification, or all methods or process steps implicitly disclosed, may be combined and/or expanded, or substituted, in any way, except for mutually exclusive features and/or steps.
The foregoing is only a preferred embodiment of the present invention, and the present invention is not limited thereto in any way, and any simple modification, equivalent replacement and improvement made to the above embodiment within the spirit and principle of the present invention still fall within the protection scope of the present invention.
Claims (10)
1. A high-power microwave flat reflection array antenna for electronic beam scanning is characterized by comprising a high-power microwave filter, a plasma switch layer, a high-power microwave space phase shifter and a ground plate (9) which are sequentially connected from top to bottom; the high-power microwave refers to microwave with the frequency range of 500 MHz-300 GHz and the peak power higher than 1 MW.
2. The high-power microwave flat reflective array antenna for electronic beam scanning according to claim 1, wherein the high-power microwave filter comprises a first upper dielectric layer (1), a first metal film (2) and a first lower dielectric layer (3) which are sequentially connected from top to bottom, the first upper dielectric layer (1) and the first lower dielectric layer (3) are both made of a positive dielectric constant material, and the first metal film (2) is made of a negative dielectric constant material.
3. The high-power microwave flat reflective array antenna for electronic beam scanning according to claim 2, wherein the high-power microwave spatial phase shifter comprises a second upper dielectric layer (6), a second metal film (7) and a second lower dielectric layer (8) which are sequentially connected from top to bottom, the second upper dielectric layer (6) and the second lower dielectric layer (8) are both made of a positive dielectric constant material, and the second metal film (7) is made of a negative dielectric constant material.
4. The high-power microwave flat-panel reflective array antenna for electronic beam scanning according to claim 3, wherein the first metal film (2) and the second metal film (7) are provided with a plurality of through holes.
5. The high-power microwave flat-panel reflective array antenna for electronic beam scanning according to claim 4, wherein the first metal film (2) and the second metal film (7) are provided with a plurality of circular through holes.
6. The high-power microwave flat-panel reflective array antenna for electronic beam scanning according to claim 5, wherein the thicknesses of the first upper dielectric layer (1), the first lower dielectric layer (3), the second upper dielectric layer (6) and the second lower dielectric layer (8) are all adjustable.
7. The high-power microwave flat reflective array antenna for electronic beam scanning according to claim 6, wherein the plasma switch layer comprises a plurality of plasma switches (4) and a dc power supply (5), the plasma switches (4) comprise two cross-shaped cross-connected vacuum quartz tubes (10), each vacuum quartz tube (10) is provided with an anode (11) and a cathode (12), and the anode (11) and the cathode (12) of one vacuum quartz tube (10) are respectively electrically connected with the dc power supply (5) to form a loop.
8. The high power microwave flat reflective array antenna for electronic beam scanning according to claim 7, wherein several plasma switches (4) are in the same straight line, and the distance between two adjacent plasma switches (4) is equal.
9. The high-power microwave flat-panel reflective array antenna for electronic beam scanning according to any one of claims 3 to 8, characterized in that the first upper dielectric layer (1), the first lower dielectric layer (3), the second upper dielectric layer (6), and the second lower dielectric layer (8) are made of 99 aluminum oxide material.
10. The high-power microwave flat-panel reflective array antenna for electronic beam scanning according to claim 9, wherein the first metal film (2) and the second metal film (7) are both copper thin films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210779734.9A CN115347375A (en) | 2022-07-04 | 2022-07-04 | Electronic beam scanning high-power microwave flat reflective array antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210779734.9A CN115347375A (en) | 2022-07-04 | 2022-07-04 | Electronic beam scanning high-power microwave flat reflective array antenna |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115347375A true CN115347375A (en) | 2022-11-15 |
Family
ID=83948114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210779734.9A Pending CN115347375A (en) | 2022-07-04 | 2022-07-04 | Electronic beam scanning high-power microwave flat reflective array antenna |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115347375A (en) |
-
2022
- 2022-07-04 CN CN202210779734.9A patent/CN115347375A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101698131B1 (en) | Broadband circularly polarized antenna using with metasurface | |
| Li et al. | Wideband perforated dense dielectric patch antenna array for millimeter-wave applications | |
| WO1997027644A1 (en) | Dynamic plasma driven antenna | |
| Wu et al. | A 140 GHz high-efficiency slotted waveguide antenna using a low-loss feeding network | |
| Kakhki et al. | Dual complementary source magneto-electric dipole antenna loaded with split ring resonators | |
| Guo et al. | Broadband and high-efficiency linear polarization converter based on reflective metasurface | |
| JP6012416B2 (en) | Antenna device | |
| Li et al. | The backfire-to-broadside symmetrical beam-scanning periodic offset microstrip antenna | |
| de Dieu Ntawangaheza et al. | A single-layer planar low-profile wideband microstrip line-fed metasurface antenna | |
| CN113517563A (en) | Active super surface wave beam scanning structure | |
| CN110718748B (en) | Metamaterial unit for encoding metamaterial antenna and equivalent circuit of feed structure of metamaterial unit | |
| CN115347375A (en) | Electronic beam scanning high-power microwave flat reflective array antenna | |
| Zhiming et al. | Investigations and prospects of Fabry-Perot antennas: A review | |
| Dorrah et al. | Two-dimensional center-fed transmission-line-grid antenna for highly efficient broadside radiation | |
| Cory et al. | Wave propagation along a rectangular metallic waveguide longitudinally loaded with a metamaterial slab | |
| Wang et al. | A W-Band, Low-Cost and High-Efficiency Antenna Array Using Multilayer SIW-to-SIW Transition with Leakage-Suppressing Scheme | |
| Ling et al. | A microstrip printed dipole antenna with UC-EBG ground for RCS reduction | |
| Pattanayak et al. | Beam steering of antenna array using phase gradient metasurface | |
| Hirokawa | Analysis and fabrication of millimeter-wave slotted waveguide array antennas | |
| Morioka et al. | Design of Microstrip-Line-Fed Rotman-lens Beamforming Network at 274 GHz | |
| CN116387841B (en) | 1-bit electronically controlled reconfigurable transmission array antenna with three-dimensional frequency selective structure | |
| CN217009553U (en) | Dual-beam antenna and electronic equipment | |
| Vassos et al. | Design of a electro-mechanically tunable low-loss mm-wave phase-shifting metasurface | |
| Luo et al. | All-metal cavity antenna with light weight, high efficiency and circular polarization for satellite platform applications | |
| Wang et al. | Air-Filled Substrate Integrated Gap Waveguide and Its Application for Planar Array Design |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |