CN115343804A - Preparation method of combined waveguide and device structure - Google Patents
Preparation method of combined waveguide and device structure Download PDFInfo
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 4
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1221—Basic optical elements, e.g. light-guiding paths made from organic materials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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Abstract
The invention discloses a preparation method of a combined waveguide and a device structure, wherein a multilayer pattern structure of a first waveguide layer and a second waveguide layer is formed on a substrate through multiple patterning, and a groove pattern formed on a first coating layer is utilized to manufacture second waveguide layer patterns with various forms, and a combined waveguide structure comprising various forms of waveguides can be formed between the first waveguide layer patterns and the second waveguide layer patterns in different combination modes, so that the waveguides with various forms and thicknesses can be simultaneously processed by utilizing process combination integration to meet different design requirements. The invention can realize a plurality of waveguide structures with different forms by utilizing the first waveguide layer and the second waveguide layer only through four light shades, and can further form combined waveguides by combination, thereby improving the selectivity and flexibility of design, reducing process steps and reducing manufacturing cost.
Description
Technical Field
The invention relates to the technical field of optical integration, in particular to a preparation method capable of simultaneously integrating combined waveguides with various structures and sizes on a substrate and a device structure containing the combined waveguides.
Background
With the rapid development of the information industry and the arrival of the internet of things, cloud computing and big data era, people have higher and higher requirements on the capacity and the processing speed of information data. Although the size of the conventional microelectronic device is gradually reduced along with the development of moore's law, the device performance and power consumption are continuously improved, but the disadvantages in terms of speed and power consumption are increasingly highlighted under the requirement of huge data application. The optical integrated technology (PIC) has obvious advantages in the aspects of size, power consumption, cost, reliability and the like, and becomes the mainstream of future development.
A waveguide (waveguide line) is one of the key technologies of an optical integrated chip as a carrier for signal transmission. Different types of waveguides (such as strip waveguides, ridge waveguides, double-layer waveguides and the like) and waveguides with different thicknesses have different performances and can meet different application requirements.
At present, the processing technology for the waveguide is single, generally only the waveguide with a fixed thickness can be processed, and the types of the processed waveguides are only 1-2 (such as strip waveguides, ridge waveguides and the like), which severely limits the flexibility of design. Even the fabrication of structures with multiple layers of waveguides is a simple stack design, which is not only inefficient, but also adds complexity to the process and design.
Therefore, there is a need to provide a new manufacturing technique capable of simultaneously integrating combined waveguides having various structures and sizes to solve the above-mentioned problems in the prior art.
Disclosure of Invention
The present invention is directed to overcoming the above-mentioned drawbacks of the prior art, and provides a method for manufacturing a combined waveguide and a device structure thereof, which can process waveguides of various forms and thicknesses on a substrate simultaneously by process combination and integration to meet different design requirements.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention provides a preparation method of a combined waveguide, which comprises the following steps:
providing a substrate with a dielectric layer;
covering and forming a first waveguide layer on the surface of the dielectric layer;
patterning the first waveguide layer for the first time to form a first waveguide layer first pattern, wherein the first waveguide layer first pattern comprises a first waveguide layer first completion pattern and a first waveguide layer transition pattern;
covering and forming a first cladding layer on the first pattern of the first waveguide layer and the surface of the dielectric layer;
forming a trench on a surface of the first cladding layer to a depth reaching a surface of the first waveguide layer;
forming a second waveguide layer conformally on a surface of the first cladding layer and on an inner wall surface of the trench;
patterning the second waveguide layer for the first time to form a first pattern of the second waveguide layer, wherein the first pattern of the second waveguide layer comprises a first completion pattern of the second waveguide layer and a transition pattern of the second waveguide layer;
and simultaneously patterning the second waveguide layer transition pattern and the first waveguide layer transition pattern for the second time to form a second waveguide layer second completion pattern and a first waveguide layer second completion pattern, thereby forming a combined waveguide with different forms formed by different combination modes among the first waveguide layer first completion pattern, the first waveguide layer second completion pattern, the second waveguide layer first completion pattern and the second waveguide layer second completion pattern.
Further, the combined waveguide includes:
a double-layer waveguide composed of the second completion pattern of the second waveguide layer formed after the simultaneous second patterning on the surface of the first cladding layer and the second completion pattern of the first waveguide layer positioned below with an interval therebetween,
a first strip waveguide formed by a first completion pattern of the first waveguide layer formed after the first patterning of the first waveguide layer for the first time,
a second strip waveguide formed by a second completion pattern of said second waveguide layer over said first cladding layer surface formed after said simultaneous second patterning,
a third stripe waveguide composed of a stack of a second completion pattern of the second waveguide layer formed on the bottom surface of the trench after the simultaneous second patterning and a second completion pattern contacting the first waveguide layer located therebelow,
a fourth strip waveguide formed by a second completion pattern of said second waveguide layer on the bottom surface of said trench formed after said simultaneous second patterning,
the box-shaped waveguide is formed by surrounding a second completion pattern of the second waveguide layer formed after the simultaneous second patterning and covering two adjacent side walls of two adjacent grooves and the surface of the first cladding layer above the two adjacent grooves with a second completion pattern of the first waveguide layer positioned below the second completion pattern,
a positive ridge waveguide composed of a stack of a first completion pattern of the second waveguide layer formed after the first patterning of the second waveguide layer and located on the bottom surface of the trench and a second completion pattern of the first waveguide layer formed after the second patterning simultaneously and having a width larger than that of the first completion pattern of the second waveguide layer and located below the second completion pattern,
an inverted ridge waveguide composed of a stack of a first completion pattern of the first waveguide layer formed after the first patterning of the first waveguide layer for the first time and a second completion pattern of the second waveguide layer formed after the second patterning simultaneously and having a width larger than that of the first completion pattern of the first waveguide layer on the bottom surface of the trench,
an upwardly open slot waveguide formed by said second completion pattern of said second waveguide layer formed after said simultaneous second patterning overlying said trench interior wall,
and at least two combinations of gate waveguides with downward openings formed by the second completion pattern of the second waveguide layer formed after the simultaneous second patterning and covering two adjacent side walls of two adjacent trenches and the surface of the first cladding layer above the two adjacent trenches.
Further, the method also comprises the following steps: and covering and forming a second cladding layer on the combined waveguide.
Further, the first waveguide layer and the second waveguide layer comprise Si, polysilicon, inP, gaAs, alGaAs, si 3 N 4 、SiON、Al 2 O 3 、LiNbO 3 、AlN、BaTiO 3 Or HfO 2 。
Further, the firstThe cladding layer and the second cladding layer material comprise SiO 2 BSG, FSG, PSG or BPSG.
Further, the first patterning the second waveguide layer specifically includes:
coating and forming an organic dielectric layer with a flat surface on the second waveguide layer completely;
sequentially forming a hard mask layer and a photoresist layer on the organic dielectric layer;
carrying out photoetching to form a photoresist pattern;
and performing etching, and sequentially transferring the photoresist patterns to the second waveguide layer through the hard mask layer to form a first pattern of the second waveguide layer.
Further, the organic dielectric layer material comprises amorphous carbon, BARC, CHM701B commercial glue, HM8006 commercial glue, HM8014 commercial glue or ODL-102 commercial glue.
Further, the hard mask layer material comprises SiO 2 SIN, siON, LTO or LTN.
The invention also provides a device structure comprising:
a substrate having a dielectric layer;
a first waveguide layer formed on the surface of the dielectric layer, the first waveguide layer including a first waveguide layer pattern, the first waveguide layer pattern including a first waveguide layer first completion pattern and a first waveguide layer second completion pattern;
a first cladding layer covering the first waveguide layer pattern and the dielectric layer surface, wherein a groove with a depth reaching the first waveguide layer surface is formed on the surface of the first cladding layer;
a second waveguide layer conformally formed on the surface of the first cladding layer and on the inner wall surface of the trench, the second waveguide layer including a second waveguide layer pattern including a second waveguide layer first completion pattern and a second waveguide layer second completion pattern;
and forming the combined waveguide with different forms by different combination modes among the first finishing pattern of the first waveguide layer, the second finishing pattern of the first waveguide layer, the first finishing pattern of the second waveguide layer and the second finishing pattern of the second waveguide layer.
Further, the combined waveguide includes:
a double-layered waveguide composed of the second completion pattern of the second waveguide layer on the surface of the first cladding layer and the second completion pattern of the first waveguide layer positioned apart from and below,
a first strip waveguide formed by a first completion pattern of said first waveguide layer,
a second strip waveguide formed by a second finished pattern of said second waveguide layer on said first cladding surface,
a third stripe waveguide composed of a stack of the second completion pattern of the second waveguide layer located on the bottom surface of the trench and the second completion pattern of the first waveguide layer located in contact with the lower portion,
a fourth strip waveguide formed by a second finished pattern of said second waveguide layer on the bottom surface of said trench,
the box-shaped waveguide is formed by encircling a second completion pattern of the second waveguide layer, which is covered on two adjacent side walls of two adjacent grooves and on the surface of the first cladding layer above the two adjacent grooves, and a second completion pattern of the first waveguide layer, which is in contact with the first waveguide layer below the two adjacent grooves,
a positive ridge waveguide composed of a stack of the first completion pattern of the second waveguide layer on the bottom surface of the trench and the second completion pattern of the first waveguide layer having a width larger than that of the first completion pattern of the second waveguide layer and being in contact with the second completion pattern of the first waveguide layer,
an inverted ridge waveguide composed of a stack of a first completion pattern of the first waveguide layer and a second completion pattern of the second waveguide layer which is in contact with the second waveguide layer on the bottom surface of the trench and has a width larger than that of the first completion pattern of the first waveguide layer,
an upwardly open slot waveguide formed of a second completion pattern of said second waveguide layer covering an inner wall of said trench,
and a combination of at least two of said downwardly opening gated waveguides formed by a second completion pattern of said second waveguide layer overlying two adjacent sidewalls of two of said trenches and above said first cladding surface.
According to the technical scheme, the multilayer pattern structures of the first waveguide layer and the second waveguide layer are formed on the substrate through multiple patterning, the groove patterns formed on the first coating layer are utilized to manufacture the second waveguide layer patterns with various forms, and various different combined waveguide structures including a double-layer waveguide, a strip waveguide, a box-shaped waveguide, a ridge waveguide, a groove-shaped waveguide, a gate-shaped waveguide and the like can be formed between the first waveguide layer patterns and the first waveguide layer patterns positioned below the second waveguide layer patterns in different combination modes, so that the waveguides with various forms and thicknesses can be simultaneously processed by utilizing process combination integration to meet different design requirements. In addition, the invention can realize a plurality of waveguide structures with different forms by utilizing the first waveguide layer and the second waveguide layer only through four light shades, and can further form a combined waveguide through combination, thereby improving the selectivity and flexibility of design, reducing process steps and reducing the manufacturing cost.
Drawings
FIG. 1 is a flow chart of a method of fabricating a composite waveguide according to a preferred embodiment of the present invention;
FIGS. 2-11 are schematic views of the steps of a method of FIG. 2 for fabricating a composite waveguide according to a preferred embodiment of the present invention;
FIG. 12 is a schematic diagram of a device structure including a composite waveguide according to a preferred embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention. Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and similar words are intended to mean that the element or item preceding the word comprises the element or item listed after the word and its equivalent, but not the exclusion of other elements or items.
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a flow chart of a method for manufacturing a combined waveguide according to a preferred embodiment of the invention. As shown in fig. 1, the method for manufacturing a composite waveguide of the present invention may include the following steps:
step S1: a substrate 10 having a dielectric layer 11 is provided.
Please refer to fig. 2. In a preferred embodiment, the substrate 10 may be Si, liNbO 3 A III-V compound (including related films on insulating layers such as SOI, LNOI, III-V compound OI), etc. silicon photonics wafer substrate 10.
The substrate 10 may also be a semi-finished product formed on the wafer through some processing and patterning processes.
In this embodiment, an SOI substrate 10 in which a silicon waveguide (Si waveguide) 12 is processed is taken as an example. A dielectric layer 11 is formed overlying and planarized on the surface of an SOI substrate 10 having a silicon waveguide 12.
In a preferred embodiment, the dielectric layer 11 may be formed by thermal oxidation, PECVD or HDP, for example.
The dielectric layer 11 material may comprise SiO 2 And low refractive index materials such as BSG, FSG, PSG, or BPSG.
In this example, siO was used 2 A dielectric layer 11.
Step S2: a first waveguide layer 13 is blanket formed over the surface of the dielectric layer 11.
Please refer to fig. 3. In a preferred embodiment, the first waveguide layer 13 is formed on the surface of the dielectric layer 11 by LPCVD, PECVD, ALD or PVD.
In a preferred embodiment, the first waveguide layer 13 may be made of a materialIncluding Si, polysilicon, inP, gaAs, alGaAs, si 3 N 4 、SiON、Al 2 O 3 、LiNbO 3 、AlN、BaTiO 3 Or HfO 2 And high refractive index materials.
In a preferred embodiment, the thickness of the first waveguide layer 13 can be 20nm to 300nm.
In order to precisely control the thickness of first waveguide layer 13, the thickness of dielectric layer 11 may be trimmed, for example, using gas cluster ion beam etching, and then first waveguide layer 13 may be regrown to improve the surface roughness and thickness uniformity of the first waveguide layer 13 film, reducing losses.
And step S3: the first waveguide layer 13 is patterned a first time to form a first waveguide layer first pattern 131 including a first waveguide layer first completion pattern 1312 and a first waveguide layer transition pattern 1311.
Please refer to fig. 4. In a preferred embodiment, the first waveguide layer 13 is patterned a first time using conventional photolithography and etching processes. After the first patterning, a plurality of independent first waveguide layer first patterns 131 are formed on the first waveguide layer 13. Among them, the first waveguide layer first pattern 131 may include a first waveguide layer first completion pattern 1312 and a first waveguide layer transition pattern 1311. The first waveguide layer first completion pattern 1312 may be used to directly form the combined waveguide 22, and the first waveguide layer transition pattern 1311 may be used to further process by the second patterning to form the first waveguide layer second completion pattern 1321.
In other preferred embodiments, more complicated etching processes such as tri-layer etching can be used to reduce the photoresist thickness and the roughness of the waveguide pattern sidewall to reduce the loss.
In an alternative embodiment, the etching may be dry etching or wet etching.
If necessary, a photolithography step may be added and a partial etching step may be performed to form ridge waveguides or trench waveguides.
After the patterned etching of first waveguide layer 13 is completed, the etching interface damage and surface roughness may be repaired by, for example, high temperature annealing to reduce the loss.
In an alternative embodiment, the annealing atmosphere may be H 2 ，O 2 ，N 2 Or an inert gas such as Ar, or a mixture of two or more gases.
And step S4: a first clad layer 14 is blanket formed on the surfaces of the first waveguide layer first pattern 131 and the dielectric layer 11.
Please refer to fig. 5. In a preferred embodiment, the first cladding layer 14 may be formed by thermal oxidation, PECVD, or HDP, and planarized on the surface of the first waveguide layer first pattern 131 and the dielectric layer 11.
In a preferred embodiment, the material of the first cladding layer 14 may be SiO 2 Low refractive index materials such as BSG, FSG, PSG, or BPSG.
In a preferred embodiment, the thickness of the first cladding layer 14 may be 50-1000nm.
In order to precisely control the thickness of subsequently formed second waveguide layer 15, the thickness of first cladding layer 14 may be trimmed using gas cluster ion beam etching to improve the surface roughness and thickness uniformity of the second waveguide layer 15 film, reducing losses.
Step S5: a trench 141 is formed on the surface of the first cladding layer 14 to a depth reaching the surface of the first waveguide layer 13.
Please refer to fig. 6. In a preferred embodiment, the first cladding layer 14 may be patterned using conventional photolithography and etching processes. After patterning, a plurality of independent trench 141 patterns are formed on the surface of the first clad layer 14. Wherein a portion of the trench 141 is disposed on the first waveguide layer first pattern 131 and exposes a surface of the first waveguide layer first pattern 131; while leaving a further portion of the trenches 141 between the first waveguide layer first patterns 131, i.e. the portion of trenches 141 is arranged in such a way as to avoid the underlying first waveguide layer first patterns 131.
The depth of the trench 141 is determined to stop at the surface of the first waveguide layer first pattern 131, and the first waveguide layer first pattern 131 may serve as a stop layer when the trench 141 is etched. The depth of the trench 141 thus formed reaches the surface of the first waveguide layer 13.
In other preferred embodiments, a more complex etching process such as tri-layer etching may be used to reduce the photoresist thickness and the roughness of the sidewalls of the trench 141 pattern to reduce the loss of the second waveguide layer 15 during growth.
In an alternative embodiment, the etching may be dry etching or wet etching.
A portion of the first cladding layer 14 material may be dry etched first, and then a complete trench 141 structure may be formed by wet etching, so as to reduce material loss and pattern damage on the upper surface of the first waveguide layer first pattern 131.
Step S6: second waveguide layer 15 is formed conformally on the surface of first cladding layer 14 and on the inner wall surface of trench 141.
Please refer to fig. 7. In a preferred embodiment, the second waveguide layer 15 is conformally formed on the surface of the first cladding layer 14 and the inner wall surface of the trench 141 by LPCVD, PECVD, ALD, PVD or the like.
In a preferred embodiment, the material of the second waveguide layer 15 can be Si, polysilicon, inP, gaAs, alGaAs, si 3 N 4 、SiON、Al 2 O 3 、LiNbO 3 、AlN、BaTiO 3 Or HfO 2 High refractive index materials.
In a preferred embodiment, second waveguide layer 15 may have a thickness of 20nm to 300nm.
In an alternative embodiment, the thickness of second waveguide layer 15 may be the same as the thickness of first waveguide layer 13.
In an alternative embodiment, the thickness of second waveguide layer 15 may be different from the thickness of first waveguide layer 13.
Step S7: the second waveguide layer 15 is patterned a first time to form second waveguide layer first patterns 151 including second waveguide layer first completion patterns 1512 and second waveguide layer transition patterns 1511.
Please refer to fig. 8. In a preferred embodiment, a tri-layer structure may be used to pattern the second waveguide layer 15 for the first time. The method specifically comprises the following steps:
step S71: a first Organic Dielectric Layer (ODL) 16 is applied to a certain thickness over the second waveguide layer 15 and planarized.
In a preferred embodiment, the first organic dielectric layer 16 material may comprise amorphous carbon, BARC, CHM701B commercial glue, HM8006 commercial glue, HM8014 commercial glue or ODL-102 commercial glue, or other commercial glues.
Step S72: then, a first hard mask layer 17 and a first photoresist layer 18 are sequentially deposited on the first organic dielectric layer 16.
In a preferred embodiment, the first hard mask layer 17 material may comprise SiO 2 SIN, siON, LTO (Low temperature oxide), LTN (Low temperature Nitride), or the like.
Due to the first hard mask layer 17 and the first organic dielectric layer 16, a thinner first photoresist layer 18 may be selected, which helps to reduce the roughness of the sidewalls of the pattern.
Step S73: photolithography is performed on the first photoresist layer 18 to form a photoresist pattern.
Step S74: etching of the second waveguide layer 15 is performed to transfer the photoresist pattern to the second waveguide layer 15 in sequence through the first hard mask layer 17, forming a second waveguide layer first pattern 151. Then, the residual tri-layer structure material is removed.
The formed second waveguide layer first pattern 151 includes a second waveguide layer first completion pattern 1512 and a second waveguide layer transition pattern 1511, as shown in fig. 9. The second waveguide layer first completion pattern 1512 can be used to directly form the combined waveguide 22, and the second waveguide layer transition pattern 1511 can be used to further process through a second patterning to form the second waveguide layer second completion pattern 1521.
Full etching of second waveguide layer 15 and partial etching of first waveguide layer 13 where the two layers merge with the first waveguide layer 13 pattern may be achieved by controlling the etch depth.
If necessary, a photolithography process may be added to perform partial etching, so as to implement a ridge waveguide structure of second waveguide layer 15.
Step S8: simultaneously patterning the second waveguide layer transition pattern 1511 and the first waveguide layer transition pattern 1311 for the second time to form a second waveguide layer second completion pattern 1521 and a first waveguide layer second completion pattern 1321, thereby forming the combined waveguide 22 having different forms formed in different combinations among the first waveguide layer first completion pattern 1312, the first waveguide layer second completion pattern 1321, the second waveguide layer first completion pattern 1512, and the second waveguide layer second completion pattern 1521.
Please refer to fig. 10. In a preferred embodiment, the second waveguide layer 15 and the first waveguide layer 13 may be patterned for the second time simultaneously by continuing to use the tri-layer structure. The method specifically comprises the following steps:
step S81: a second Organic Dielectric Layer (ODL) 19 with a certain thickness is coated on the second waveguide layer 15 with the first patterning of the second waveguide layer 151 and planarized.
In a preferred embodiment, the second organic dielectric layer 19 material may include amorphous carbon, BARC, CHM701B commercial glue, HM8006 commercial glue, HM8014 commercial glue or ODL-102 commercial glue, or other commercial glues.
Step S82: then, a second hard mask layer 20 and a second photoresist layer 21 are sequentially deposited on the second organic dielectric layer 19.
In a preferred embodiment, the second hard mask layer 20 material may comprise SiO 2 SIN, siON, LTO (Low temperature oxide), LTN (Low temperature Nitride), or the like.
Due to the second hard mask layer 20 and the second organic dielectric layer 19, a thinner second photoresist layer 21 may be selected, which helps to reduce the roughness of the sidewalls of the pattern.
Step S83: photolithography is performed on the second photoresist layer 21 to form a photoresist pattern.
Step S84: simultaneous etching of the second waveguide layer 15, the first cladding layer 14, and the first waveguide layer 13 is performed, the photoresist pattern is sequentially transferred to the second waveguide layer 15, the first cladding layer 14, and the first waveguide layer 13 through the second hard mask layer 20, the second waveguide layer second completion pattern 1521 is further formed on the second waveguide layer transition pattern 1511 of the second waveguide layer 15, and the first waveguide layer second completion pattern 1321 is further formed on the first waveguide layer transition pattern 1311 of the first waveguide layer 13. Then, the residual tri-layer structure material is removed.
In the simultaneous second patterning, the second waveguide layer first completion pattern 1512 formed in the first patterning on second waveguide layer 15 is retained. Similarly, the first waveguide layer first completion pattern 1312 formed on the first waveguide layer 13 at the time of the first patterning is also preserved.
Thus, a second waveguide layer second pattern 152 composed of the second waveguide layer first completion pattern 1512 and the second waveguide layer second completion pattern 1521 is formed on the second waveguide layer 15; at the same time, a first waveguide layer second pattern 132 composed of a first waveguide layer first completion pattern 1312 and a first waveguide layer second completion pattern 1321 is formed on the first waveguide layer 13, as shown in fig. 11. Thus, by combining the first waveguide layer first completion pattern 1312, the first waveguide layer second completion pattern 1321, the second waveguide layer first completion pattern 1512, and the second waveguide layer second completion pattern 1521 in different combinations, the combined waveguide 22 having different forms can be formed.
It should be noted that, when there are a plurality of first waveguide layer first completion patterns 1312 (or first waveguide layer second completion patterns 1321, second waveguide layer first completion patterns 1512, and second waveguide layer second completion patterns 1521), the shapes and sizes of the first waveguide layer first completion patterns 1312 (or first waveguide layer second completion patterns 1321, second waveguide layer first completion patterns 1512, and second waveguide layer second completion patterns 1521) may be different (for convenience of representation, the same reference numerals are used).
Please refer to fig. 11. For example, combined waveguide 22 may include any combination of two or more of the following:
the double-layered waveguide 221 composed of the second waveguide layer second completion pattern 1521 formed after the simultaneous second patterning on the surface of the first cladding layer 14 and the first waveguide layer second completion pattern 1321 located below with an interval;
a first stripe waveguide 222 composed of a first waveguide layer first completion pattern 1312 formed after patterning the first waveguide layer 13 for the first time;
a second strip waveguide 223 composed of a second waveguide layer second completion pattern 1521 formed after the simultaneous second patterning on the surface of the first cladding layer 14;
a third stripe waveguide 226 composed of a stack of a second waveguide layer second completion pattern 1521 formed after the simultaneous second patterning on the bottom surface of the trench 141 and a second completion pattern 1321 contacting the first waveguide layer located therebelow;
a fourth strip waveguide 229 formed of a second waveguide layer second completion pattern 1521 formed after the simultaneous second patterning on the bottom surface of the trench 141;
the box-shaped waveguide 224 is formed by surrounding a second waveguide layer second completion pattern 1521 formed by simultaneous second patterning and covering two adjacent side walls of two adjacent trenches 141 and the surface of the first cladding layer 14 above the two adjacent side walls, and a second waveguide layer second completion pattern 1321 contacting the first waveguide layer below the two adjacent side walls;
a positive ridge waveguide 225 composed of a stack of second waveguide layer first completion patterns 1512 formed after first patterning of the second waveguide layer 15 on the bottom surfaces of the trenches 141 and first waveguide layer second completion patterns 1321 formed after second patterning simultaneously and contacting below and having a width greater than that of the second waveguide layer first completion patterns 1512;
the inverted ridge waveguide 228 composed of a stack of a first waveguide layer first completion pattern 1312 formed after first patterning the first waveguide layer 13 and a second waveguide layer second completion pattern 1521 formed after second patterning and contacting on the bottom surface of the trench 141 and having a width greater than that of the first waveguide layer first completion pattern 1312;
an upwardly open slot waveguide 227 formed of a second waveguide layer second completion pattern 1521 formed by simultaneous second patterning so as to cover the inner wall of the trench 141;
and a downwardly opening gate waveguide 2210 formed by a second waveguide layer second completion pattern 1521 formed by simultaneous second patterning covering the two adjacent sidewalls of the two adjacent trenches 141 and the surface of the first cladding layer 14 thereabove.
Please refer to fig. 11. In a preferred embodiment, a combined waveguide 22 structure having multiple types of waveguides, which is composed of a combination of the above-described double-layer waveguide 221, first stripe waveguide 222, second stripe waveguide 223, box-shaped waveguide (ring waveguide) 224, regular ridge waveguide 225, third stripe waveguide 226, slot waveguide 227, inverted ridge waveguide 228, fourth stripe waveguide 229, and gate waveguide 2210, etc., is formed on the substrate 10.
In a preferred embodiment, a second cladding layer 23 may be further formed overlying the combined waveguide 22 structure, as shown in FIG. 12.
The second cladding layer 23 may be formed overlying the composite waveguide 22 structure by thermal oxidation, PECVD, or HDP, and planarized.
In a preferred embodiment, the material of the second cladding layer 23 may be SiO 2 Low refractive index materials such as BSG, FSG, PSG, or BPSG.
In a preferred embodiment, the thickness of the second cladding layer 23 may be 50-1000nm.
In order to precisely control the thickness of the second cladding layer 23, the thickness of the second cladding layer 23 may be tailored using gas cluster ion beam etching to improve film surface roughness and thickness uniformity and reduce losses.
The following describes a device structure of the present invention in detail with reference to the accompanying drawings.
Referring to fig. 12, fig. 12 is a schematic structural diagram of a device including a combined waveguide according to a preferred embodiment of the invention. As shown in fig. 12, a device structure of the present invention may be formed by the above-mentioned method for fabricating a composite waveguide of the present invention, and the device structure may include, from bottom to top:
a substrate 10 having a dielectric layer 11;
a first waveguide layer 13 formed on the surface of the dielectric layer 11, the first waveguide layer 13 including a first waveguide layer pattern including a first waveguide layer first completion pattern 1312 and a first waveguide layer second completion pattern 1321;
a first cladding layer 14 covering the first waveguide layer pattern and the surface of the dielectric layer 11, the first cladding layer 14 having a trench 141 (refer to fig. 6) formed on the surface thereof to a depth reaching the surface of the first waveguide layer 13;
a second waveguide layer 15 conformally formed on the surface of the first cladding layer 14 and on the inner wall surfaces of the trenches 141, the second waveguide layer 15 including a second waveguide layer pattern including a second waveguide layer first completion pattern 1512 and a second waveguide layer second completion pattern 1521.
The combination waveguide 22 having different forms is formed by different combinations among the first waveguide layer first completion pattern 1312, the first waveguide layer second completion pattern 1321, the second waveguide layer first completion pattern 1512, and the second waveguide layer second completion pattern 1521.
In a preferred embodiment, the combined waveguide 22 may include:
the double-layered waveguide 221 composed of the second waveguide layer second completion pattern 1521 located on the surface of the first clad layer 14 and the first waveguide layer second completion pattern 1321 located below with an interval therebetween, the first stripe waveguide 222 composed of the first waveguide layer first completion pattern 1312, the second stripe waveguide 223 composed of the second waveguide layer second completion pattern 1521 located on the surface of the first clad layer 14, the third stripe waveguide 226 composed of the stack of the second waveguide layer second completion pattern 1521 located on the bottom surface of the trench 141 and the second completion pattern 1321 contacting the first waveguide layer located below, the fourth stripe waveguide 229 composed of the second waveguide layer second completion pattern 1521 located on the bottom surface of the trench 141, a box-shaped waveguide 224 formed by surrounding the second waveguide layer second completion pattern 1521 on the surface of the first cladding layer 14 covering two adjacent side walls of two adjacent trenches 141 and above and contacting the first waveguide layer second completion pattern 1321 located below, a positive ridge waveguide 225 formed by laminating the second waveguide layer first completion pattern 1512 located on the bottom surface of the trench 141 and contacting the first waveguide layer second completion pattern 1321 located below and having a width larger than that of the second waveguide layer first completion pattern 1512, an inverted ridge waveguide 228 formed by laminating the first waveguide layer first completion pattern 1312 and the second waveguide layer second completion pattern 1521 located on the bottom surface of the trench 141 and having a width larger than that of the first waveguide layer first completion pattern 1312, an upward opening groove-shaped waveguide 227 formed by the second waveguide layer second completion pattern 1521 covering the inner wall 141 of the trench, and at least two of the downwardly opening gated waveguides 2210 formed of second waveguide layer second completion patterns 1521 covering on and over two adjacent sidewalls of two adjacent trenches 141 on the surface of the first cladding layer 14.
Please refer to fig. 12. In a preferred embodiment, the combined waveguide 22 may be a combined waveguide 22 structure having multiple types of waveguides formed on the dielectric layer 11 of the substrate 10 and composed of the above-mentioned combination of the double-layer waveguide 221, the first rib waveguide 222, the second rib waveguide 223, the box-shaped waveguide (ring waveguide) 224, the positive ridge waveguide 225, the third rib waveguide 226, the slot waveguide 227, the inverted ridge waveguide 228, the fourth rib waveguide 229, and the gate waveguide 2210.
In a preferred embodiment, a second cladding layer 23 may also be provided on the first cladding layer 14, and the second cladding layer 23 completely covers the combined waveguide 22 structure.
In summary, the present invention forms a multilayer pattern structure of the first waveguide layer 13 and the second waveguide layer 15 on the substrate 10 by patterning a plurality of times, and uses the pattern of the trench 141 formed on the first cladding layer 14 to fabricate the pattern of the second waveguide layer 15 having various patterns, and can form various different combined waveguide 22 structures including the double-layer waveguide 221, the first to fourth stripe waveguides 222, 223, 226, 229, the box-shaped waveguide 224, the positive stripe waveguide 225, the inverted stripe waveguide 228, the slot waveguide 227, and the gate waveguide 2210, etc. with different combinations with the pattern of the first waveguide layer 13 located thereunder, so that waveguides having various forms and thicknesses can be simultaneously processed by process combination integration to meet different design requirements. In addition, the invention can realize a plurality of waveguide structures with different forms by using the first waveguide layer 13 and the second waveguide layer 15 only through four light masks, and can further form the combined waveguide 22 through combination, thereby improving the selectivity and flexibility of design, reducing process steps and reducing the manufacturing cost.
Although the embodiments of the present invention have been described in detail hereinabove, it is apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it is to be understood that such modifications and variations fall within the scope and spirit of the present invention as set forth in the appended claims. Moreover, the invention as described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (10)
1. A method of making a composite waveguide, comprising:
providing a substrate with a dielectric layer;
covering and forming a first waveguide layer on the surface of the dielectric layer;
patterning the first waveguide layer for the first time to form a first waveguide layer first pattern which comprises a first waveguide layer first completion pattern and a first waveguide layer transition pattern;
covering and forming a first cladding layer on the first pattern of the first waveguide layer and the surface of the dielectric layer;
forming a trench on a surface of the first cladding layer to a depth reaching a surface of the first waveguide layer;
forming a second waveguide layer conformally on a surface of the first cladding layer and on an inner wall surface of the trench;
patterning the second waveguide layer for the first time to form a first pattern of the second waveguide layer, wherein the first pattern of the second waveguide layer comprises a first completion pattern of the second waveguide layer and a transition pattern of the second waveguide layer;
and simultaneously patterning the second waveguide layer transition pattern and the first waveguide layer transition pattern for the second time to form a second waveguide layer second completion pattern and a first waveguide layer second completion pattern, thereby forming the combined waveguide with different forms formed by different combination modes among the first waveguide layer first completion pattern, the first waveguide layer second completion pattern, the second waveguide layer first completion pattern and the second waveguide layer second completion pattern.
2. The method of making a composite waveguide of claim 1, wherein the composite waveguide comprises:
a double-layer waveguide composed of the second completion pattern of the second waveguide layer formed after the simultaneous second patterning on the surface of the first cladding layer and the second completion pattern of the first waveguide layer positioned below with an interval therebetween,
a first strip waveguide formed by a first completion pattern of the first waveguide layer formed after the first patterning of the first waveguide layer for the first time,
a second strip waveguide formed by a second completion pattern of said second waveguide layer over said first cladding layer surface formed after said simultaneous second patterning,
a third stripe waveguide composed of a stack of a second completion pattern of the second waveguide layer formed on the bottom surface of the trench after the simultaneous second patterning and a second completion pattern contacting the first waveguide layer located therebelow,
a fourth strip waveguide formed by a second completion pattern of said second waveguide layer on the bottom surface of said trench formed after said simultaneous second patterning,
the box-shaped waveguide is formed by surrounding a second completion pattern of the second waveguide layer formed after the simultaneous second patterning and covering two adjacent side walls of two adjacent grooves and the surface of the first cladding layer above the two adjacent grooves with a second completion pattern of the first waveguide layer positioned below the second completion pattern,
a positive ridge waveguide composed of a stack of a first completion pattern of the second waveguide layer formed after the first patterning of the second waveguide layer and located on the bottom surface of the trench and a second completion pattern of the first waveguide layer formed after the second patterning simultaneously and having a width larger than that of the first completion pattern of the second waveguide layer and located below the second completion pattern,
an inverted ridge waveguide composed of a stack of a first completion pattern of the first waveguide layer formed after the first patterning of the first waveguide layer for the first time and a second completion pattern of the second waveguide layer formed after the second patterning simultaneously and having a width larger than that of the first completion pattern of the first waveguide layer on the bottom surface of the trench,
an upwardly open channel waveguide formed by a second completion pattern of said second waveguide layer formed after said simultaneous second patterning covering said trench inner wall, an
And at least two downward-opening gate-shaped waveguides formed by the second completion pattern of the second waveguide layer formed after the simultaneous second patterning and covering two similar side walls of two adjacent trenches and the surface of the first cladding layer above the two adjacent trenches.
3. The method of making a composite waveguide of claim 1, further comprising: and covering and forming a second cladding layer on the combined waveguide.
4. A method of fabricating a combined waveguide according to claim 1, wherein the first and second waveguide layers comprise Si, polysilicon, inP, gaAs, alGaAs, si 3 N 4 、SiON、Al 2 O 3 、LiNbO 3 、AlN、BaTiO 3 Or HfO 2 。
5. The method of claim 3, wherein the first cladding layer and the second cladding layer material comprise SiO 2 BSG, FSG, PSG or BPSG.
6. The method according to claim 1, wherein the first patterning of the second waveguide layer comprises:
coating and forming an organic dielectric layer with a flat surface on the second waveguide layer completely;
sequentially forming a hard mask layer and a photoresist layer on the organic dielectric layer;
carrying out photoetching to form a photoresist pattern;
and performing etching, and sequentially transmitting the photoresist patterns to the second waveguide layer through the hard mask layer to form the first pattern of the second waveguide layer.
7. The method of claim 6, wherein the organic dielectric layer material comprises amorphous carbon, BARC, CHM701B commercial glue, HM8006 commercial glue, HM8014 commercial glue or ODL-102 commercial glue.
8. The method of claim 6, wherein the hard mask layer material comprises SiO 2 SIN, siON, LTO or LTN.
9. A device structure, comprising:
a substrate having a dielectric layer;
a first waveguide layer formed on the surface of the dielectric layer, the first waveguide layer including a first waveguide layer pattern, the first waveguide layer pattern including a first waveguide layer first completion pattern and a first waveguide layer second completion pattern;
a first cladding layer covering the first waveguide layer pattern and the dielectric layer surface, wherein a groove with a depth reaching the first waveguide layer surface is formed on the surface of the first cladding layer;
a second waveguide layer conformally formed on the surface of the first cladding layer and on the inner wall surface of the trench, the second waveguide layer including a second waveguide layer pattern including a second waveguide layer first completion pattern and a second waveguide layer second completion pattern;
and forming the combined waveguide with different forms by different combination modes among the first finishing pattern of the first waveguide layer, the second finishing pattern of the first waveguide layer, the first finishing pattern of the second waveguide layer and the second finishing pattern of the second waveguide layer.
10. The device structure of claim 9, wherein the combined waveguide comprises:
a double-layered waveguide composed of the second completion pattern of the second waveguide layer on the surface of the first cladding layer and the second completion pattern of the first waveguide layer positioned apart from and below,
a first strip waveguide formed by a first completion pattern of said first waveguide layer,
a second strip waveguide formed by a second completion pattern of said second waveguide layer on a surface of said first cladding layer,
a third stripe waveguide composed of a stack of the second completion pattern of the second waveguide layer located on the bottom surface of the trench and the second completion pattern of the first waveguide layer located in contact with the lower side,
a fourth strip waveguide formed by a second finished pattern of said second waveguide layer on the bottom surface of said trench,
the box-shaped waveguide is formed by encircling a second completion pattern of the second waveguide layer, which is covered on two adjacent side walls of two adjacent grooves and on the surface of the first cladding layer above the two adjacent grooves, and a second completion pattern of the first waveguide layer, which is in contact with the first waveguide layer below the two adjacent grooves,
a positive ridge waveguide composed of a stack of the first completion pattern of the second waveguide layer on the bottom surface of the trench and the second completion pattern of the first waveguide layer having a width larger than that of the first completion pattern of the second waveguide layer and being in contact with the second completion pattern of the first waveguide layer,
an inverted ridge waveguide composed of a stack of a first completion pattern of the first waveguide layer and a second completion pattern of the second waveguide layer which is in contact with the second waveguide layer on the bottom surface of the trench and has a width larger than that of the first completion pattern of the first waveguide layer,
an upwardly open slot waveguide formed by a second completion pattern of said second waveguide layer covering the inner wall of said trench, and
a combination of at least two of said downwardly opening gated waveguides formed by a second completion pattern of said second waveguide layer overlying two adjacent sidewalls of two of said trenches and above said first cladding surface.
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