CN115340757A - High-transmittance ultraviolet light blocking base film, double-sided nano silver wire conductive film comprising base film and preparation method of double-sided nano silver wire conductive film - Google Patents
High-transmittance ultraviolet light blocking base film, double-sided nano silver wire conductive film comprising base film and preparation method of double-sided nano silver wire conductive film Download PDFInfo
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Abstract
The invention discloses a high-transmittance ultraviolet light blocking base film and a preparation method thereof, wherein the high-transmittance ultraviolet light blocking base film comprises 75-90% of transparent copolyester resin and 10-25% of ultraviolet light absorbent in percentage by mass. The double-sided nano silver wire conductive film comprises a high-transmittance ultraviolet light blocking base film, nano silver wire layers are arranged on two layers of the high-transmittance ultraviolet light blocking base film, and conductive circuits are etched on the nano silver wire layers. The high-transmittance ultraviolet light barrier double-sided silver nanowire conducting film can realize double-sided conduction, solves the problem that the double-sided conducting film cannot be prepared by laser etching at present, and has the characteristics of high transmittance and ultraviolet light barrier, the transmittance reaches 90.5% -93.7%, the laser transmittance is 2% -5%, and the back of the double-sided silver nanowire conducting film is not obviously damaged when single-sided laser etching is carried out.
Description
Technical Field
The invention belongs to the technical field of touch screen electronic materials, and particularly relates to a high-transmittance ultraviolet-light-blocking base film, a double-sided silver nanowire conductive film comprising the base film and a preparation method of the double-sided silver nanowire conductive film.
The invention belongs to a transparent conductive film material of an optoelectronic material in a 1.3.5 key electronic material in the key direction of a 1.3 electronic core industry in a new generation information technology industry of a strategic new industrial catalogue.
Background
Touch Panel (Touch Panel), also known as Touch screen or Touch Panel, is an inductive liquid crystal display device capable of receiving input signals such as contacts, and is used as an input component of intelligent equipment, and mainly comprises components such as protective glass, conductive film, touch chip, optical adhesive, and the like. The conductive film adopts an ITO conductive film, and the ITO conductive film is the most mainstream transparent conductive film material in the current market due to good conductivity and light transmittance and mature technology, and occupies more than 90% of the market share of the small-size touch screen. However, the ITO transparent conductive film has obvious disadvantages, and is mainly prepared by depositing the ITO transparent conductive film on a transparent glass or PET substrate through processes such as magnetron sputtering, and has the defects of harsh preparation conditions, high cost, poor flexibility, low yield of large-sized products, overlarge resistance, small film forming area, brittle film, and the like, and the application of the ITO transparent conductive film in the direction of large-sized touch screens and flexible touch screens is limited.
With the arrival of the flexible era, the substitution of ITO materials has become an inevitable trend, wherein the silver nanowires have the best conductive, light-transmitting and bending performances, the silver nanowires are widely applied to the fields of education whiteboards, conference systems, smart phones, flexible wearable equipment and the like, the transparent conductive films can be produced by using a coating process, the volume production cost is the lowest, and the market prospect is wide.
At present, the technology of the touch screen is rapidly developed, and in recent years, a focus in the field is how to realize a single-layer double-sided silver nanowire transparent conductive film, so that the aims of lightness and thinness of the touch screen, simplicity and convenience in process flow and cost reduction are achieved. The single-layer double-sided silver nanowire transparent conductive film is favored by researchers in the industry, although the double-sided silver nanowire preparation process of the film substrate is mature, the phenomenon that double-sided laser etching is carried out to the back surface in the subsequent touch screen preparation process can occur, and the film substrate cannot be used, so that how to solve the problem that the double-sided laser etching is carried out to the back surface and the high light transmittance of the silver nanowire transparent conductive film is kept is the key and difficult point of the current industry research.
Chinese patent CN 108984025A discloses a single-layer double-sided electrode of a capacitive touch screen and a preparation method thereof, wherein nano silver wire transparent conductive thin film layers are prepared on the surfaces of two sides of a substrate, and are chemically etched to form the single-layer double-sided electrode of the capacitive touch screen, and the chemical etching manner includes acid etching, alkali etching, oxidized metal ion etching, etching paste etching or ozone etching. The method can realize the single-layer double-sided electrode, but the chemical etching process is complex and high in cost, the single-layer double-sided electrode film cannot be produced in large scale like the laser etching technology used by the industrial chain, the actual commercial benefit is low, and meanwhile, the chemical etching is easy to influence the nano silver wire, so that the photoelectric property of the nano silver wire is lost.
Chinese patent CN 107610813A discloses a double-sided conductive film and a preparation method thereof, the double-sided conductive film comprises a base film, two sides of the base film are respectively provided with an anti-ultraviolet glue layer, and one side of the anti-ultraviolet glue layer far away from the base film is provided with a nano silver layer. Because the ultraviolet-resistant glue layers are arranged on the two sides of the base film, when double-sided laser etching is carried out on the nano silver layer, laser cannot penetrate through the nano silver layer on the back of etching, the problem of the back of double-sided laser etching is solved, the ultraviolet-resistant glue layers are additionally arranged on the two sides, so that the key performance light transmittance of the nano silver conductive film is greatly influenced, the coating on the nano silver layer is influenced, and meanwhile, the complexity and the cost of an actual production process can be greatly increased due to the multi-layer structure.
In summary, in order to meet the requirements of the new era on lightness and thinness of the touch screen, simplification of the process flow, cost reduction and the like, it is urgently needed to provide an intelligent, lightness and thinness high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film.
Disclosure of Invention
Aiming at the problems that the single-layer double-sided electrode in the prior art adopts a complicated chemical etching process and high cost, the single-layer double-sided electrode film cannot be industrially produced on a large scale, and the photoelectric property of the nano silver wire is easily lost due to chemical etching; the invention provides a high-transmittance ultraviolet light blocking base film, a double-sided silver nanowire conductive film comprising the base film and a preparation method thereof, and solves the problems that the two sides of the base film are provided with ultraviolet-resistant adhesive layers to influence light transmittance and the like.
The object of the invention is achieved in the following way:
a high-transmittance ultraviolet light blocking base film comprises 75-90% of transparent copolyester resin and 10-25% of ultraviolet light absorbent in percentage by mass.
The transparent copolyester resin is one or two of polyethylene terephthalate and polyethylene terephthalate-1, 4-cyclohexanedimethanol ester.
The ultraviolet absorbent is any one of 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2', 4' -tetrahydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-n-octoxybenzophenone and 2- (2-hydroxy-3, 5-di-tert-phenyl) -5-chlorinated benzotriazole.
The thickness of the base film is 50 to 250 mu m.
The preparation method of the high-transmittance ultraviolet light blocking base film comprises the steps of placing transparent copolyester resin and an ultraviolet light absorbent in a high-speed mixer for stirring, drying after uniform mixing, adding the mixture into a single-screw extruder for melt extrusion after drying, and obtaining the high-transmittance ultraviolet light blocking base film through casting, unidirectional stretching, rolling and slitting processes.
Stirring speed in the high-speed mixer is 1200 r/min, drying temperature is 70-100 ℃, drying time is 5-8 h, and melt extrusion temperature is 280 ℃.
Contain the two-sided nanometer silver line conductive film of high ultraviolet separation base film that passes through, high ultraviolet separation base film that passes through is two-layer all sets up the nanometer silver line layer, etches the conducting wire on the nanometer silver line layer.
The preparation method of the double-sided nano silver wire conductive film comprises the steps of coating nano silver wire coating liquid on the surfaces of two sides of a high-transmittance ultraviolet light blocking base film, drying and curing to form a nano silver wire layer; and then carrying out laser etching on the double-sided nano silver wire layer to form a conducting wire.
The coating mode of the nano silver wire is any one of gravure coating, spin coating, rod coating, dip coating, spray coating, roll-to-roll coating, screen printing coating or ink jet printing coating.
The drying and curing temperature is 100 to 140 ℃, and the drying and curing time is 5 to 10min.
Compared with the prior art, the high-transmittance ultraviolet light blocking base film has the characteristics of high transmittance and ultraviolet light blocking.
The invention provides a high-transmittance ultraviolet-light-blocking double-sided nano silver wire conductive film, which can realize double-sided conduction, solves the problem that the double-sided conductive film cannot be prepared by laser etching at present, and has the characteristics of high transmittance and ultraviolet-light blocking, wherein the transmittance reaches 90.5-93.7%, the laser transmittance reaches 2-5%, and the back of the double-sided nano silver wire conductive film is not obviously damaged when single-sided laser etching is carried out on the double-sided nano silver wire conductive film. Meanwhile, the novel nano silver wire material is used for replacing the traditional ITO material, and the transparent conductive film is prepared by a simple coating mode instead of complex process modes such as ITO film magnetron sputtering and the like, so that the method has the advantages of simple and rapid process, low cost, low carbon and energy saving.
The double-sided nano silver wire conductive film prepared by the invention has the advantages of simple preparation steps, simple and convenient operation and the like, can be used for industrial batch preparation and production, can be well butted with the existing commercial single-layer nano silver wire conductive film production process equipment, simplifies the structure of a touch screen, saves the use of a conductive film layer and an optical adhesive layer, saves one-step laminating process, and can be applied to the field of photoelectric display of the touch screen.
Drawings
Fig. 1 is a schematic structural diagram of a high-transmittance ultraviolet-blocking double-sided silver nanowire conductive film.
Fig. 2 is a flow chart of a preparation process of the high-transmittance ultraviolet-light-blocking double-sided nano silver wire conductive film.
Detailed Description
A high-transmittance ultraviolet light blocking base film comprises 75-90% of transparent copolyester resin and 10-25% of ultraviolet light absorbent in percentage by mass.
Wherein the transparent copolyester resin is one or two of polyethylene glycol terephthalate (copolymerized PET polyester resin) and polyethylene glycol terephthalate-1, 4-cyclohexane dimethanol ester (copolymerized PETG polyester resin).
The ultraviolet absorbent is preferably any one of 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2', 4' -tetrahydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-n-octoxybenzophenone and 2- (2-hydroxy-3, 5-di-tert-phenyl) -5-chlorinated benzotriazole.
The thickness of the base film is 50 to 250 micrometers, and can be adjusted properly according to production requirements.
The preparation method of the high-transmittance ultraviolet light blocking base film comprises the steps of placing transparent copolyester resin and an ultraviolet light absorbent in a high-speed mixer for stirring, drying after uniform mixing, adding the mixture into a single-screw extruder for melt extrusion after drying, and obtaining the high-transmittance ultraviolet light blocking base film through casting, unidirectional stretching, rolling and slitting processes.
The stirring speed in the high-speed mixer is 1200 r/min, the drying temperature is 70-100 ℃, the drying time is 5-8 h, and the melt extrusion temperature is 280 ℃.
As shown in fig. 1, the double-sided silver nanowire conductive film including the high ultraviolet light blocking base film is formed by disposing a silver nanowire layer on both sides of the high ultraviolet light blocking base film. The conductive circuit can be etched on the nano silver wire layer.
A preparation method of a double-sided nano silver wire conductive film is shown in figure 2, wherein nano silver wire coating liquid is coated on the surfaces of two sides of a high-transmittance ultraviolet light blocking base film, and a nano silver wire layer is formed after drying and curing; and then carrying out laser etching on the double-sided nano silver wire layer to form a conductive circuit. The coating mode of the nano silver wire is any one of gravure coating, spin coating, bar coating, dip coating, spray coating, roll-to-roll coating, screen printing coating or ink jet printing coating; the drying and curing temperature is 100 to 140 ℃, and the drying and curing time is 5 to 10min.
Example 1
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorbent 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer according to a mass ratio of 75 to 75 at a speed of 1200 rpm for stirring, uniformly mixing, and then drying at 70 ℃ for 5 hours, adding the mixture into a single-screw extruder for melt extrusion after drying, wherein the melt temperature is 280 ℃, and then carrying out tape casting, unidirectional stretching, rolling and slitting processes to obtain a high-transmittance ultraviolet light blocking base film with the thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 100 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And carrying out laser etching on the prepared double-sided structure nano silver wire conductive film to form a conductive circuit, etching one side of the conductive film and then etching the other side of the conductive film, wherein the conductive circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.2%, the laser transmittance is 2%, and the back surface of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Example 2
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorbent 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer according to a mass ratio of 75 to 75 at a speed of 1200 rpm for stirring, uniformly mixing, drying at 80 ℃ for 5 hours, adding the mixture into a single-screw extruder for melt extrusion at a melt temperature of 280 ℃, and then carrying out tape casting, unidirectional stretching, rolling and slitting processes to obtain a high-transmittance ultraviolet light blocking base film with a thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 100 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And carrying out laser etching on the prepared double-sided structure nano silver wire conductive film to form a conductive circuit, etching one side of the conductive film and then etching the other side of the conductive film, wherein the conductive circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.4%, the laser transmittance is 2%, and the back surface of the double-sided silver nanowire conducting film is not obviously damaged when the double-sided silver nanowire conducting film is subjected to single-sided laser etching through visual observation.
Example 3
A high-transmittance ultraviolet-blocking double-sided silver nanowire conducting film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorbent 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer according to a mass ratio of 75 to 75 at a speed of 1200 rpm for stirring, uniformly mixing, drying at 100 ℃ for 5 hours, adding the mixture into a single-screw extruder for melt extrusion at a melt temperature of 280 ℃, and then carrying out tape casting, unidirectional stretching, rolling and slitting processes to obtain a high-transmittance ultraviolet light blocking base film with a thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 100 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And performing laser etching on the prepared double-sided structure silver nanowire conducting film to form a conducting circuit, etching one side of the conducting film, and then etching the other side of the conducting film, wherein the conducting circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.3%, the laser transmittance is 2%, and the back surface of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Example 4
A high-transmittance ultraviolet-blocking double-sided silver nanowire conducting film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorber 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer according to a mass ratio of 75 to 75 at 1200 r/min, stirring, uniformly mixing, drying at 80 ℃ for 7h, adding the mixture into a single-screw extruder for melt extrusion at a melt temperature of 280 ℃, and then carrying out casting, unidirectional stretching, rolling and slitting processes to obtain the high-transmittance ultraviolet light blocking base film with the thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 100 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And performing laser etching on the prepared double-sided structure silver nanowire conducting film to form a conducting circuit, etching one side of the conducting film, and then etching the other side of the conducting film, wherein the conducting circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.4%, the laser transmittance is 1.9%, and the back of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Example 5
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorber 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer according to a mass ratio of 75 to 75 at 1200 r/min, stirring, uniformly mixing, drying at 80 ℃ for 8h, adding the mixture into a single-screw extruder for melt extrusion at a melt temperature of 280 ℃, and then carrying out casting, unidirectional stretching, rolling and slitting processes to obtain the high-transmittance ultraviolet light blocking base film with the thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 100 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And carrying out laser etching on the prepared double-sided structure nano silver wire conductive film to form a conductive circuit, etching one side of the conductive film and then etching the other side of the conductive film, wherein the conductive circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.4%, the laser transmittance is 2%, and the back surface of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Example 6
A high-transmittance ultraviolet-blocking double-sided silver nanowire conducting film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorber 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer according to a mass ratio of 75 to 75 at 1200 r/min, stirring, uniformly mixing, drying at 80 ℃ for 7h, adding the mixture into a single-screw extruder for melt extrusion at a melt temperature of 280 ℃, and then carrying out casting, unidirectional stretching, rolling and slitting processes to obtain the high-transmittance ultraviolet light blocking base film with the thickness of 50 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 100 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And carrying out laser etching on the prepared double-sided structure nano silver wire conductive film to form a conductive circuit, etching one side of the conductive film and then etching the other side of the conductive film, wherein the conductive circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.7%, the laser transmittance is 2.5%, and the back of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Example 7
A high-transmittance ultraviolet-blocking double-sided silver nanowire conducting film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorbent 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer according to a mass ratio of 75 to 75 at a speed of 1200 rpm for stirring, uniformly mixing, drying at 80 ℃ for 7h, adding the mixture into a single-screw extruder for melt extrusion at a melt temperature of 280 ℃, and then carrying out tape casting, unidirectional stretching, rolling and slitting processes to obtain a high-transmittance ultraviolet light blocking base film with a thickness of 250 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 100 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And performing laser etching on the prepared double-sided structure silver nanowire conducting film to form a conducting circuit, etching one side of the conducting film, and then etching the other side of the conducting film, wherein the conducting circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 90.5%, the laser transmittance is 1.8%, and the back of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Example 8
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorber 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer according to a mass ratio of 75 to 75 at 1200 r/min, stirring, uniformly mixing, drying at 80 ℃ for 8h, adding the mixture into a single-screw extruder for melt extrusion at a melt temperature of 280 ℃, and then carrying out casting, unidirectional stretching, rolling and slitting processes to obtain the high-transmittance ultraviolet light blocking base film with the thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 130 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And carrying out laser etching on the prepared double-sided structure nano silver wire conductive film to form a conductive circuit, etching one side of the conductive film and then etching the other side of the conductive film, wherein the conductive circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.5%, the laser transmittance is 2%, and the back surface of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Example 9
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorbent 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer according to a mass ratio of 75 to 75 at a speed of 1200 rpm for stirring, uniformly mixing, and then drying at 80 ℃ for 8h, adding the mixture into a single-screw extruder for melt extrusion after drying, wherein the melt temperature is 280 ℃, and then carrying out tape casting, unidirectional stretching, rolling and slitting processes to obtain a high-transmittance ultraviolet light blocking base film with the thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 140 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And carrying out laser etching on the prepared double-sided structure nano silver wire conductive film to form a conductive circuit, etching one side of the conductive film and then etching the other side of the conductive film, wherein the conductive circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.4%, the laser transmittance is 2%, and the back surface of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Example 10
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorber 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer according to a mass ratio of 75 to 75 at 1200 r/min, stirring, uniformly mixing, drying at 80 ℃ for 8h, adding the mixture into a single-screw extruder for melt extrusion at a melt temperature of 280 ℃, and then carrying out casting, unidirectional stretching, rolling and slitting processes to obtain the high-transmittance ultraviolet light blocking base film with the thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 5min at the temperature of 130 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And carrying out laser etching on the prepared double-sided structure nano silver wire conductive film to form a conductive circuit, etching one side of the conductive film and then etching the other side of the conductive film, wherein the conductive circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.5%, the laser transmittance is 2%, and the back surface of the double-sided silver nanowire conducting film is not obviously damaged when the double-sided silver nanowire conducting film is subjected to single-sided laser etching through visual observation.
Example 11
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorbent 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer according to a mass ratio of 75 to 75 at a speed of 1200 rpm for stirring, uniformly mixing, and then drying at 80 ℃ for 8h, adding the mixture into a single-screw extruder for melt extrusion after drying, wherein the melt temperature is 280 ℃, and then carrying out tape casting, unidirectional stretching, rolling and slitting processes to obtain a high-transmittance ultraviolet light blocking base film with the thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 7min at the temperature of 130 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And performing laser etching on the prepared double-sided structure silver nanowire conducting film to form a conducting circuit, etching one side of the conducting film, and then etching the other side of the conducting film, wherein the conducting circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.5%, the laser transmittance is 2%, and the back surface of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Example 12
A high-transmittance ultraviolet-blocking double-sided silver nanowire conducting film comprises the following specific steps: 1) Putting transparent copolyester resin PET and an ultraviolet absorbent 2,2', 4' -tetrahydroxybenzophenone in a high-speed mixer according to a mass ratio of 80 to 20 at 1200 rpm, stirring, uniformly mixing, drying at 80 ℃ for 7h, adding the mixture into a single-screw extruder for melt extrusion at a melt temperature of 280 ℃, and then carrying out tape casting, unidirectional stretching, rolling and slitting processes to obtain a high-transmittance ultraviolet light barrier base film with a thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 130 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And performing laser etching on the prepared double-sided structure silver nanowire conducting film to form a conducting circuit, etching one side of the conducting film, and then etching the other side of the conducting film, wherein the conducting circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.3%, the laser transmittance is 3%, and the back surface of the double-sided silver nanowire conducting film is not obviously damaged when the double-sided silver nanowire conducting film is subjected to single-sided laser etching through visual observation.
Example 13
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Placing transparent copolyester resin PET and ultraviolet absorber 2-hydroxy-4-methoxybenzophenone in a high-speed mixer according to a mass ratio of 90:10 at 1200 rpm for stirring, uniformly mixing, drying at 80 ℃ for 7h, adding the mixture into a single-screw extruder for melt extrusion at 280 ℃, and then carrying out casting, unidirectional stretching, rolling and slitting processes to obtain the high-transmittance ultraviolet light blocking base film with the thickness of 125 micrometers. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 130 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And performing laser etching on the prepared double-sided structure silver nanowire conducting film to form a conducting circuit, etching one side of the conducting film, and then etching the other side of the conducting film, wherein the conducting circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.5%, the laser transmittance is 5%, and the back surface of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Example 14
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Putting transparent copolyester resin PETG and ultraviolet absorber 2-hydroxy-4-n-octyloxy benzophenone in a high-speed mixer according to a mass ratio of 75 to 75 for 1200 r/min, stirring, uniformly mixing, drying at 80 ℃ for 7h, adding the mixture into a single-screw extruder for melt extrusion at 280 ℃, and then carrying out casting, unidirectional stretching, rolling and slitting processes to obtain the high-transmittance ultraviolet light blocking base film with the thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 130 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And carrying out laser etching on the prepared double-sided structure nano silver wire conductive film to form a conductive circuit, etching one side of the conductive film and then etching the other side of the conductive film, wherein the conductive circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 92.5%, the laser transmittance is 3%, and the back surface of the double-sided silver nanowire conducting film is not obviously damaged when the double-sided silver nanowire conducting film is subjected to single-sided laser etching through visual observation.
Example 15
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Transparent copolyester resin PETG and ultraviolet absorber 2- (2-hydroxy-3, 5-di-tert-phenyl) -5-chlorinated benzotriazole are placed in a high-speed mixer according to the mass ratio of 90 to 10 for 1200 r/min to be stirred, the mixture is uniformly mixed and then dried, the drying temperature is 80 ℃, the drying time is 7h, the mixture is added into a single-screw extruder for melt extrusion after the drying treatment, the melt temperature is 280 ℃, and then the high-transmittance ultraviolet light barrier base film is obtained through the processes of casting, unidirectional stretching, rolling and slitting, wherein the thickness of the base film is 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 130 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And performing laser etching on the prepared double-sided structure silver nanowire conducting film to form a conducting circuit, etching one side of the conducting film, and then etching the other side of the conducting film, wherein the conducting circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 92.7%, the laser transmittance is 4.5%, and the back of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Example 16
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Placing transparent copolyester resin PET, PETG and ultraviolet absorber 2- (2-hydroxy-5-methylphenyl) benzotriazole in a high-speed mixer at a mass ratio of 60 to 25 in a ratio of 1200 r/min, stirring, uniformly mixing, drying at 80 ℃ for 7h, adding into a single-screw extruder for melt extrusion after drying, wherein the melt temperature is 280 ℃, and then carrying out tape casting, unidirectional stretching, rolling and slitting processes to obtain the high-transmittance ultraviolet light blocking base film with the thickness of 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 130 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And carrying out laser etching on the prepared double-sided structure nano silver wire conductive film to form a conductive circuit, etching one side of the conductive film and then etching the other side of the conductive film, wherein the conductive circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.1%, the laser transmittance is 2.5%, and the back surface of the double-sided silver nanowire conducting film is not obviously damaged when the double-sided silver nanowire conducting film is subjected to single-sided laser etching through visual observation.
Example 17
A high-transmittance ultraviolet-blocking double-sided silver nanowire conducting film comprises the following specific steps: 1) Transparent copolyester resin PET, PETG and ultraviolet absorbent 2,2', 4' -tetrahydroxybenzophenone are placed in a high-speed mixer according to the mass ratio of 50 to 20 for 1200 r/min to be stirred, drying treatment is carried out after uniform mixing, the drying temperature is 80 ℃, the drying time is 7h, after drying treatment, a single-screw extruder is added for melt extrusion, the melt temperature is 280 ℃, and then the high-transmittance ultraviolet light barrier base film is obtained through the processes of casting, unidirectional stretching, rolling and slitting, wherein the thickness of the base film is 125 mu m. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 130 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And carrying out laser etching on the prepared double-sided structure nano silver wire conductive film to form a conductive circuit, etching one side of the conductive film and then etching the other side of the conductive film, wherein the conductive circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.3%, the laser transmittance is 3%, and the back surface of the double-sided silver nanowire conducting film is not obviously damaged when the double-sided silver nanowire conducting film is subjected to single-sided laser etching through visual observation.
Example 18
A high-transmittance ultraviolet light blocking double-sided silver nanowire conductive film comprises the following specific steps: 1) Putting transparent copolyester resin PET, PETG and ultraviolet absorber 2-hydroxy-4-methoxybenzophenone into a high-speed mixer according to a mass ratio of 40. 2) And coating the nano silver wire coating liquid on two sides of the obtained high-transmittance ultraviolet light blocking base film to prepare a nano silver wire conducting layer, and drying for 10min at the temperature of 130 ℃ to obtain the nano silver wire conducting film with the double-sided structure. 3) And carrying out laser etching on the prepared double-sided structure nano silver wire conductive film to form a conductive circuit, etching one side of the conductive film and then etching the other side of the conductive film, wherein the conductive circuits on the front side and the back side are in a vertical crossing state. The transmittance of the prepared finished product is 93.5%, the laser transmittance is 3.5%, and the back of the double-sided nano silver wire conductive film is not obviously damaged when the double-sided nano silver wire conductive film is subjected to single-sided laser etching through visual observation.
Comparative example 1
A double-sided nano silver wire transparent conductive film of a common PET substrate is compared with that of comparative example 1, except that the base film is different, the nano silver wire layer and the specific preparation process are the same as those of example 1. The transmittance of the common double-sided silver nanowire conductive film made in the comparative example 1 is 92%, the laser transmittance is 90%, and the back damage is serious when the common double-sided silver nanowire conductive film made in the PET substrate is subjected to single-sided laser etching through visual observation.
Compared with the comparative example, the double-sided silver nanowire conducting film prepared from the high-transmittance ultraviolet light blocking base film can realize double-sided conduction, solves the problem that the double-layer conducting film cannot be prepared by laser etching at present, and has the characteristics of high transmittance and ultraviolet light blocking, the transmittance reaches 90.5% -93.5%, the laser transmittance reaches 2% -5%, and the back of the double-sided silver nanowire conducting film is not obviously damaged when single-sided laser etching is carried out. Meanwhile, the novel nano silver wire material is used for replacing the traditional ITO material, and the transparent conductive film is prepared by a simple coating mode instead of complex process modes such as ITO film magnetron sputtering and the like, so that the preparation method has the advantages of simple and rapid process, low cost, low carbon, energy conservation, simplicity and convenience in operation and the like.
The double-sided nano silver wire conductive film prepared by the invention can be used for industrial batch preparation and production, can be well butted with the existing commercial single-layer nano silver wire conductive film production process equipment, simplifies the structure of the touch screen, omits a conductive film layer and an optical adhesive layer, omits one-step laminating process and can be applied to the photoelectric display field of the touch screen.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various changes and modifications can be made without departing from the overall concept of the present invention, and these should also be construed as the protection scope of the present invention.
Claims (10)
1. A high ultraviolet barrier base film that passes through which characterized in that: comprises transparent copolyester resin and ultraviolet absorbent, wherein the mass percent of the transparent copolyester resin is 75-90%, and the content of the ultraviolet absorbent is 10-25%.
2. The high-transmittance ultraviolet-blocking base film according to claim 1, wherein: the transparent copolyester resin is one or two of polyethylene terephthalate and polyethylene terephthalate-1, 4-cyclohexanedimethanol ester.
3. The high-transmittance ultraviolet-blocking base film according to claim 1, characterized in that: the ultraviolet light absorber is any one of 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2', 4' -tetrahydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-n-octoxybenzophenone and 2- (2-hydroxy-3, 5-di-tert-phenyl) -5-chlorinated benzotriazole.
4. The high-transmittance ultraviolet-blocking base film according to claim 1, wherein: the thickness of the base film is 50 to 250 micrometers.
5. The method for producing the high-transmittance ultraviolet-blocking base film according to any one of claims 1 to 4, characterized in that: transparent copolyester resin and ultraviolet absorbent are placed in a high-speed mixer to be stirred, drying treatment is carried out after uniform mixing, a single-screw extruder is added after drying treatment for melt extrusion, and then the high-transmittance ultraviolet light blocking base film is obtained through the processes of casting, unidirectional stretching, rolling and slitting.
6. The method for preparing the high-transmittance ultraviolet-light-blocking base film according to claim 5, wherein the method comprises the following steps: stirring speed in the high-speed mixer is 1200 r/min, drying temperature is 70-100 ℃, drying time is 5-8 h, and melt extrusion temperature is 280 ℃.
7. A double-sided silver nanowire conductive film comprising the high-transmittance ultraviolet-light-blocking base film according to any one of claims 1 to 4, wherein: two layers of the high-transmittance ultraviolet light blocking base film are both provided with a nano silver line layer, and conductive circuits are etched on the nano silver line layer.
8. The method for preparing the double-sided silver nanowire conductive film according to claim 7, characterized in that: coating the nano-silver wire coating liquid on the surfaces of the two sides of the high-transmittance ultraviolet light blocking base film, and drying and curing to form a nano-silver wire layer; and then carrying out laser etching on the double-sided nano silver wire layer to form a conductive circuit.
9. The method for preparing the double-sided silver nanowire conductive film according to claim 8, characterized in that: the coating mode of the nano silver wire is any one of gravure coating, spin coating, bar coating, dip coating, spray coating, roll-to-roll coating, screen printing coating or ink jet printing coating.
10. The method for preparing the double-sided silver nanowire conductive film according to claim 8, characterized in that: the drying and curing temperature is 100 to 140 ℃, and the drying and curing time is 5 to 10min.
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