CN115336179A - 驱动晶体管的方法、装置和系统 - Google Patents

驱动晶体管的方法、装置和系统 Download PDF

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Publication number
CN115336179A
CN115336179A CN202180023920.3A CN202180023920A CN115336179A CN 115336179 A CN115336179 A CN 115336179A CN 202180023920 A CN202180023920 A CN 202180023920A CN 115336179 A CN115336179 A CN 115336179A
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CN
China
Prior art keywords
terminal
transistor
coupled
voltage
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180023920.3A
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English (en)
Chinese (zh)
Inventor
Y·谢
M·勒德斯
C·卡亚
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Texas Instruments Inc
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Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN115336179A publication Critical patent/CN115336179A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/284—Modifications for introducing a time delay before switching in field effect transistor switches
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002—Switching arrangements with several input- or output terminals
    • H03K17/005—Switching arrangements with several input- or output terminals with several inputs only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Dc-Dc Converters (AREA)
  • Amplifiers (AREA)
  • Control Of Stepping Motors (AREA)
CN202180023920.3A 2020-03-23 2021-03-23 驱动晶体管的方法、装置和系统 Pending CN115336179A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/827,357 US11038502B1 (en) 2020-03-23 2020-03-23 Methods, apparatus, and systems to drive a transistor
US16/827,357 2020-03-23
PCT/US2021/023560 WO2021195010A1 (en) 2020-03-23 2021-03-23 Methods, apparatus, and systems to drive a transistor

Publications (1)

Publication Number Publication Date
CN115336179A true CN115336179A (zh) 2022-11-11

Family

ID=76321081

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180023920.3A Pending CN115336179A (zh) 2020-03-23 2021-03-23 驱动晶体管的方法、装置和系统

Country Status (5)

Country Link
US (2) US11038502B1 (enExample)
JP (1) JP7779619B2 (enExample)
CN (1) CN115336179A (enExample)
DE (1) DE112021001796T5 (enExample)
WO (1) WO2021195010A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11038502B1 (en) * 2020-03-23 2021-06-15 Texas Instruments Incorporated Methods, apparatus, and systems to drive a transistor
KR20230002671A (ko) * 2020-04-23 2023-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US12153459B2 (en) * 2021-10-18 2024-11-26 Texas Instruments Incorporated Low output impedance driver circuits and systems
US20240113611A1 (en) * 2022-09-29 2024-04-04 Texas Instruments Incorporated Slew-rate control for power stages
WO2024167844A1 (en) * 2023-02-06 2024-08-15 Psemi Corporation Systems and methods for powering up a charge pump
US12580380B2 (en) * 2023-02-27 2026-03-17 Texas Instruments Incorporated Methods and apparatus to protect transistors using voltage clamp circuitry

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010047220A1 (en) * 2000-04-20 2001-11-29 Yukihide Niimi Electric load driving device and method of using the same
US20050099748A1 (en) * 2003-11-12 2005-05-12 Aemireddy Arvind R. Reverse conduction protection method and apparatus for a dual power supply driver
US20080164765A1 (en) * 2007-01-05 2008-07-10 Illegems Paul F Regulator Circuit with Multiple Supply Voltages
US20090002054A1 (en) * 2007-06-27 2009-01-01 Mitsubishi Electric Corporation Gate drive apparatus
US20100289468A1 (en) * 2007-08-30 2010-11-18 Paolo Draghi Voltage Regulator and Method for Voltage Regulation
US20130009689A1 (en) * 2011-07-05 2013-01-10 Paulo Santos Circuit and Method For Dynamic Biasing of an Output Stage
US20140139268A1 (en) * 2012-11-19 2014-05-22 Infineon Technologies Ag Driver circuit with tight control of gate voltage
CN107924205A (zh) * 2015-08-31 2018-04-17 德克萨斯仪器股份有限公司 具有改进的栅极至源极电压调节的可配置高侧nmos栅极控制的方法与装置
US20180181158A1 (en) * 2016-12-22 2018-06-28 Texas Instruments Incorporated Startup current limiters
CN109302171A (zh) * 2017-07-25 2019-02-01 伟诠电子股份有限公司 具动态电平调制栅极电压的驱动控制器
CN109992032A (zh) * 2015-10-13 2019-07-09 意法设计与应用股份有限公司 有压差检测器和偏置电流限制器的电压调节器及相关方法
CN110739955A (zh) * 2018-07-20 2020-01-31 瑞萨电子株式会社 半导体器件和电子控制装置

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Publication number Priority date Publication date Assignee Title
JPH0756938B2 (ja) * 1988-02-04 1995-06-14 三菱電機株式会社 出力回路
US5546043A (en) * 1992-05-07 1996-08-13 Siemens Nixdorf Informationssysteme Aktiengesellschaft Circuit arrangement for driving an MOS field-effect transistor
JP3123349B2 (ja) * 1994-06-29 2001-01-09 富士電機株式会社 半導体装置の制御回路
JP2013005231A (ja) * 2011-06-16 2013-01-07 Toyota Central R&D Labs Inc 駆動装置
US9479163B2 (en) * 2013-07-30 2016-10-25 Infineon Technologies Ag Circuitry and method for operating an electronic switch
JP6119674B2 (ja) * 2014-06-06 2017-04-26 トヨタ自動車株式会社 駆動回路及び半導体装置
EP3402070B1 (en) * 2017-05-11 2020-02-12 Infineon Technologies Austria AG Class d audio amplifier with adjustable gate drive
US11038502B1 (en) * 2020-03-23 2021-06-15 Texas Instruments Incorporated Methods, apparatus, and systems to drive a transistor

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010047220A1 (en) * 2000-04-20 2001-11-29 Yukihide Niimi Electric load driving device and method of using the same
US20050099748A1 (en) * 2003-11-12 2005-05-12 Aemireddy Arvind R. Reverse conduction protection method and apparatus for a dual power supply driver
US20080164765A1 (en) * 2007-01-05 2008-07-10 Illegems Paul F Regulator Circuit with Multiple Supply Voltages
US20090002054A1 (en) * 2007-06-27 2009-01-01 Mitsubishi Electric Corporation Gate drive apparatus
US20100289468A1 (en) * 2007-08-30 2010-11-18 Paolo Draghi Voltage Regulator and Method for Voltage Regulation
US20130009689A1 (en) * 2011-07-05 2013-01-10 Paulo Santos Circuit and Method For Dynamic Biasing of an Output Stage
US20140139268A1 (en) * 2012-11-19 2014-05-22 Infineon Technologies Ag Driver circuit with tight control of gate voltage
CN107924205A (zh) * 2015-08-31 2018-04-17 德克萨斯仪器股份有限公司 具有改进的栅极至源极电压调节的可配置高侧nmos栅极控制的方法与装置
CN109992032A (zh) * 2015-10-13 2019-07-09 意法设计与应用股份有限公司 有压差检测器和偏置电流限制器的电压调节器及相关方法
US20180181158A1 (en) * 2016-12-22 2018-06-28 Texas Instruments Incorporated Startup current limiters
CN109302171A (zh) * 2017-07-25 2019-02-01 伟诠电子股份有限公司 具动态电平调制栅极电压的驱动控制器
CN110739955A (zh) * 2018-07-20 2020-01-31 瑞萨电子株式会社 半导体器件和电子控制装置

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Title
KHONDKER ZAKIR AHMED 等: "Design of a linearly increasing inrush current limit circuit for DC-DC boost regulators", IEEE, 27 May 2011 (2011-05-27) *
陈杰智 等: "高增益调节系数硅单电子晶体管的输运特性", 半导体学报, no. 01, 8 January 2007 (2007-01-08) *

Also Published As

Publication number Publication date
JP7779619B2 (ja) 2025-12-03
WO2021195010A1 (en) 2021-09-30
US11038502B1 (en) 2021-06-15
JP2023520674A (ja) 2023-05-18
DE112021001796T5 (de) 2023-01-26
US20210297075A1 (en) 2021-09-23
US11405033B2 (en) 2022-08-02

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