CN115333488A - Ultra-wideband high-power amplifier and transmitter - Google Patents

Ultra-wideband high-power amplifier and transmitter Download PDF

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Publication number
CN115333488A
CN115333488A CN202210880328.1A CN202210880328A CN115333488A CN 115333488 A CN115333488 A CN 115333488A CN 202210880328 A CN202210880328 A CN 202210880328A CN 115333488 A CN115333488 A CN 115333488A
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matching network
network
stage
ultra
input
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张晓帆
高永辉
斛彦生
银军
倪涛
余若祺
徐守利
赵路阳
林正兆
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CETC 13 Research Institute
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transmitters (AREA)
  • Amplifiers (AREA)

Abstract

The invention provides an ultra-wideband high-power amplifier and a transmitter, wherein the power amplifier comprises: a signal input for receiving an input signal; one end of the input matching network is connected with the signal input end, and the other end of the input matching network is connected with the grid electrode of the GaN power amplification chip and is used for matching impedance between the grid electrode of the GaN power amplification chip and the signal input end; one end of the output matching network is connected with the drain electrode of the GaN power amplification chip, and the other end of the output matching network is connected with the signal output end and used for impedance matching in the ultra-wideband; the input bias network comprises a filter capacitor, one end of the filter capacitor is connected with the grid electrode of the GaN power amplification chip, and the other end of the filter capacitor is connected with an external grid electrode power supply and is used for filtering and bypassing the grid electrode power supply; and the output bias network comprises a filter capacitor, one end of the filter capacitor is connected with the drain electrode of the GaN power amplification chip, and the other end of the filter capacitor is connected with an external drain electrode power supply and is used for filtering and bypassing the drain electrode power supply. The frequency of the power amplifier can cover 0.2G-2 GHz.

Description

Ultra-wideband high-power amplifier and transmitter
Technical Field
The invention relates to the technical field of power amplifiers, in particular to an ultra-wideband high-power amplifier and a transmitter.
Background
As the operating bandwidth requirements of communication, countermeasure and test equipment become higher and higher, the bandwidth requirements of the power amplifier as a core component of the equipment also become wider and wider.
GaN is used as a third-generation semiconductor material, the material property of wide forbidden band and high thermal conductivity of the GaN can well meet the performance requirements of high frequency, high temperature, high power and high efficiency, and the microwave power performance is far superior to that of semiconductor materials such as Si, gaAs and the like. The broadband power amplifier developed based on the GaN material has wide application prospect in the fields of radio frequency amplifier equipment, broadband communication, electronic countermeasure and the like. The high-power device or power amplifier with ultra-wideband operation is developed, so that the volume of the equipment is greatly reduced, the circuit complexity is greatly reduced, and simultaneously, the support and the possibility are provided for developing the whole machine product with new functions.
At present, the existing single broadband power device product cannot cover 0.2GHz-0.35GHz, so that an ultra-wideband GaN power amplifier with the frequency covering 0.2G-2 GHz and the output power larger than or equal to 100W is urgently needed.
Disclosure of Invention
The embodiment of the invention provides an ultra-wideband high-power amplifier and a transmitter, which are used for solving the problem that the frequency of a single wideband power device cannot completely cover 0.2G-2 GHz at present.
In a first aspect, an embodiment of the present invention provides an ultra wide band high-power amplifier, including:
a signal input for receiving an input signal;
one end of the input matching network is connected with the signal input end, and the other end of the input matching network is connected with the grid electrode of the GaN power amplification chip and is used for matching impedance between the grid electrode of the GaN power amplification chip and the signal input end;
one end of the output matching network is connected with the drain electrode of the GaN power amplification chip, and the other end of the output matching network is connected with the signal output end and is used for impedance matching in the ultra-wideband;
the input bias network comprises a filter capacitor, one end of the filter capacitor is connected with the grid electrode of the GaN power amplification chip, and the other end of the filter capacitor is connected with an external grid electrode power supply and is used for filtering and bypassing the grid electrode power supply;
and the output bias network comprises a filter capacitor, one end of the filter capacitor is connected with the drain electrode of the GaN power amplification chip, and the other end of the filter capacitor is connected with an external drain electrode power supply and is used for filtering and bypassing the drain electrode power supply.
In one possible implementation manner, the input matching network comprises three stages of matching networks, namely a first stage input matching network, a second stage input matching network and a third stage input matching network which are connected in sequence, and the first stage input matching network is connected with the grid electrode of the GaN power amplification chip;
the first-stage input matching network comprises a T-shaped network and an RC parallel network connected with the T-shaped network and is used for transforming and improving the grid impedance of the GaN power amplification chip; the T-type network comprises two inductors connected in series and a capacitor connected with the two inductors simultaneously, and the other end of the capacitor is grounded;
the second-stage input matching network comprises a plurality of microstrip lines connected in series and a blocking capacitor connected with the microstrip lines and is used for carrying out impedance transformation on the output impedance of the first-stage input matching network;
the third stage input matching network includes a transmission line transformer comprised of a plurality of semi-rigid cables for ultra-wideband impedance transformation.
In a possible implementation manner, the first-stage input matching network further comprises a pair-ground RC series network, one end of the pair-ground RC series network is respectively connected with one end of the T-type network and one end of the RC parallel network, and the other end of the pair-ground RC series network is grounded;
the second-stage input matching network also comprises a parallel RC network, one end of the parallel RC network is connected to one end of the last microstrip line in series connection, and the other end of the parallel RC network is connected with the DC blocking capacitor.
In one possible implementation, the first-stage input matching network is a GaAs microwave monolithic integrated circuit fabricated based on a GaAs passive process.
In one possible implementation manner, the output matching network comprises three stages of matching networks, namely a first stage output matching network, a second stage output matching network and a third stage output matching network which are connected in sequence, and the first stage output matching network is connected with the drain electrode of the GaN power amplification chip;
the first-stage output matching network comprises a T-shaped ceramic chip network prepared on a ceramic chip, wherein the inductor in the T-shaped ceramic chip network is a ceramic chip inductor, and the capacitor is a ceramic chip capacitor and is used for transforming the impedance of the drain electrode of the GaN power amplification chip;
the second-stage output matching network comprises a plurality of microstrip transmission lines connected in series and is used for broadband impedance transformation;
the third stage output matching network includes a transmission line transformer comprised of a plurality of semi-rigid cables for ultra-wideband impedance transformation.
In one possible implementation, the impedance transformation ratio of the third-stage input matching network and the third-stage output matching network is 4.
In one possible implementation, the third-stage input matching network and the third-stage output matching network are both composed of 2 semi-rigid cables, the characteristic impedance of each semi-rigid cable is 25 ohms, and the outer diameter of each semi-rigid cable is 2.2mm;
the lengths of the 2 semi-rigid cables of the third-stage input matching network are 44.4mm and 42.1mm respectively;
the lengths of the 2 semi-rigid cables of the third stage output matching network are 37.1mm and 39.4mm respectively.
In a possible implementation manner, the input bias network and the output bias network further include bias inductors for isolating radio frequencies in the radio frequency channel and the dc supply channel.
In a possible implementation mode, the GaN power amplification chip, the first-stage input matching network and the first-stage output matching network are assembled on a molybdenum-copper carrier, and the second-stage output matching network, the third-stage output matching network, the second-stage input matching network, the third-stage input matching network, the input bias network and the output bias network are assembled on a PCB (printed circuit board);
the molybdenum-copper carrier and the PCB are welded on the red copper carrier.
In a second aspect, an embodiment of the present invention provides a transmitter for a wireless communication system, where the transmitter includes the ultra-wideband high-power amplifier provided in the first aspect.
The embodiment of the invention provides an ultra-wideband high-power amplifier, wherein an input matching network and an input bias network are connected to a grid electrode of a GaN power amplification chip, and an output matching network and an output bias network are connected to a drain electrode of the GaN power amplification chip, so that the frequency of the power amplifier covers 0.2G-2 GHz, and the output power is more than or equal to 100W.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the embodiments or the prior art description will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings may be obtained according to these drawings without inventive labor.
Fig. 1 is a schematic structural diagram of an ultra-wideband high-power amplifier provided in an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another ultra-wideband high-power amplifier provided by the embodiment of the invention;
fig. 3 is a schematic structural diagram of the first-stage input matching network in fig. 2 according to an embodiment of the present invention;
fig. 4 is a simulation diagram of the stability factor of the power amplifier of fig. 3 according to an embodiment of the present invention;
FIG. 5 is a schematic semi-rigid cable diagram of a third stage input matching network provided by an embodiment of the present invention;
fig. 6 is a diagram of an impedance simulation result of a 50 ohm port impedance transformed by a third-stage input matching network according to an embodiment of the present invention;
FIG. 7 is a schematic semi-rigid cable diagram of a third stage output matching network provided by an embodiment of the present invention;
fig. 8 is a schematic diagram illustrating simulation of output power of an ultra-wideband high-power amplifier provided by an embodiment of the invention;
FIG. 9 is a schematic diagram illustrating a simulation of drain efficiency of an ultra-wideband high-power amplifier provided by an embodiment of the invention;
FIG. 10 is a schematic diagram illustrating simulation of an input standing wave of an ultra-wideband high-power amplifier provided by an embodiment of the invention;
fig. 11 is a schematic diagram of an assembly structure of an ultra-wideband high-power amplifier provided in an embodiment of the present invention;
fig. 12 is a schematic structural diagram of an assembled ultra-wideband high-power amplifier according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following description is made by way of specific embodiments with reference to the accompanying drawings.
As described in the background art, the requirement of the ultra-wideband power amplifier for the wideband is increasingly wider, and at present, power device products with working voltage of 50V and output power of 100W in the frequency band of 0.5 GHz-2.0 GHz are provided abroad. Domestic enterprises also successively put forward power device products with the working voltage of 28V, 0.35GHz-2.0 GHz and the output power of 100W in the frequency band and products with the working voltage of 28V, 0.8GHz-2.0 GHz and the like.
However, the working bandwidth of the current domestic and foreign products covers 0.35 GHz-2 GHz, the output power is 100W, and the working frequency of the products cannot cover 0.2GHz-0.35GHz, so that the equipment which has the requirement on the working frequency of 0.2 GHz-2 GHz needs to adopt two sets of power amplification frequency dividing sections to realize the power amplification function of the whole frequency band of 0.2 GHz-2 GHz, but the cost, the volume and the complexity are greatly increased. When the working frequency band is expanded to 0.2 GHz-2 GHz, the working frequency band of the power amplifier is greatly increased, and the design problem of a plurality of octave circuits covering a meter wave band to an L wave band needs to be solved.
In order to solve the problems in the prior art, the embodiment of the invention provides an ultra-wideband high-power amplifier and a transmitter. The ultra-wideband high-power amplifier provided by the embodiment of the invention is described below firstly.
As shown in fig. 1, an ultra-wideband high-power amplifier includes: the GaN power amplifier comprises a GaN power amplification chip, a signal input end, an input matching network, an output matching network, an input bias network, an output bias network and a signal output end.
And the signal input end is used for receiving an input signal of an external power supply. And one end of the input matching network is connected with the signal input end, the other end of the input matching network is connected with the grid electrode of the GaN power amplification chip, and the input matching network is used for matching impedance between the grid electrode of the GaN power amplification chip and the signal input end. And one end of the output matching network is connected with the drain electrode of the GaN power amplification chip, and the other end of the output matching network is connected with the signal output end and is used for impedance matching in the ultra-wideband. And the input bias network comprises a filter capacitor, one end of the filter capacitor is connected with the grid electrode of the GaN power amplification chip, and the other end of the filter capacitor is connected with an external grid electrode power supply and is used for carrying out filtering and bypass processing on the grid electrode power supply. And the output bias network comprises a filter capacitor, one end of the filter capacitor is connected with the drain electrode of the GaN power amplification chip, and the other end of the filter capacitor is connected with an external drain electrode power supply and is used for filtering and bypassing the drain electrode power supply.
Specifically, the external power supply provides the required gate operating voltage and drain operating voltage to the GaN power amplifier chip through the input bias network and the output bias network, respectively.
In some embodiments, the input bias network and the output bias network have filter capacitors for filtering and bypassing the power supply, and further have bias inductors for RF isolation of the RF path and the dc supply path.
The input matching network is used for realizing impedance matching between the grid impedance of the GaN power amplification chip and the impedance of the 50 ohm port. Since the working frequency band spans several octaves, the impedance matching is completed in such a wide frequency band, and thus the realization of low input standing waves is one of the design difficulties of the present invention. The GaN power amplification chip has the advantages that as the frequency is reduced, the gain is increased, the gain difference between the high frequency point and the low frequency point reaches several dB, and the gain needs to be balanced and controlled through an input matching network. In addition, the stability of the power amplifier operation is also an important consideration for the design of the input matching network, and the circuit for improving the stability may affect the circuit impedance, so that the impedance matching circuit and the stability improving circuit design need to be planned for the ultra-wide operating band.
In some embodiments, as shown in fig. 2, to achieve ultra-wideband impedance matching, the input matching network adopts a three-stage matching network structure, and the output matching network also adopts a three-stage matching structure, so as to achieve impedance matching in the ultra-wideband.
Specifically, the input matching network comprises a first-stage input matching network, a second-stage input matching network and a third-stage input matching network which are connected in sequence, and the first-stage input matching network is connected with the grid electrode of the GaN power amplification chip.
The first-stage input matching network comprises a T-shaped network and an RC parallel network connected with the T-shaped network and is used for transforming and improving the grid impedance of the GaN power amplification chip. As shown in fig. 3, the T-network comprises two inductors L connected in series 1 And L 2 And a capacitor C connected to the two inductors simultaneously 3 Capacitance C 3 And the other end of the same is grounded. First stage input matching networkFirstly, the grid impedance of the GaN chip is transformed and promoted through a T-shaped network, and R is added 1 C 1 And the parallel network performs gain equalization to further improve stability.
As shown in FIG. 3, to improve stability, the ground R is also increased 2 C 2 A series network. And the circuit of the first-stage input matching network is realized based on GaAs passive process design, namely passive MMIC. As shown in the simulation diagram of the stability factor of the power amplifier of the first-stage input matching network in fig. 4, it can be seen from fig. 4 that the stability factor of the power amplifier in the operating frequency band is greater than 1 and is in an absolute steady state.
The second-stage input matching network comprises a plurality of microstrip lines connected in series and a blocking capacitor connected with the microstrip lines and is used for carrying out impedance transformation on the output impedance of the first-stage input matching network.
Specifically, the second-stage input matching network is a hybrid network composed of a microstrip and a lumped element, the input impedance matched by the GaAs MMIC is subjected to impedance conversion by three microstrip transmission lines connected in series, and in order to further realize gain balance and further improve stability, a first-stage parallel RC network is connected in series at the input end of the network. Because the third-stage input matching network is provided with a ground channel, the input end of the second-stage input matching network is also provided with a separation value capacitor to realize direct current-to-ground isolation.
The third stage input matching network includes a transmission line transformer comprised of a plurality of semi-rigid cables for ultra-wideband impedance transformation.
Specifically, the third-stage input matching network adopts a transmission line transformer composed of semi-rigid cables to realize ultra-wideband impedance transformation, the impedance transformation ratio is 4. By optimizing the characteristic impedance and length of the semi-rigid cable, a compromise between transformation ratio and bandwidth is achieved. Wherein the third stage input matching network as shown in FIG. 5 is comprised of 2 semi-rigid cables T 1 And T 2 The semi-rigid cable had a characteristic impedance of 25 ohms and an outer diameter of 2.2mm. The 2 semi-rigid cables of the third stage input matching network are 44.4mm and 42.1mm in length,by optimizing the parameters of the semi-rigid cable, the compromise between the transmission line transformer broadband and the impedance transformation ratio is realized, and the aim of optimal broadband impedance matching is fulfilled. Fig. 6 is a diagram showing the simulation result of the impedance of the 50-ohm port after being transformed by the third-stage input matching network.
The output matching network comprises three stages of matching networks, namely a first stage output matching network, a second stage output matching network and a third stage output matching network which are connected in sequence, and the first stage output matching network is connected with the drain electrode of the GaN power amplification chip.
The first-stage output matching network comprises a T-shaped ceramic chip network prepared on a ceramic chip, wherein the inductor in the T-shaped ceramic chip network is a ceramic chip inductor, and the capacitor is a ceramic chip capacitor and is used for transforming the impedance of the drain electrode of the GaN power amplification chip.
Specifically, the first-stage output matching network is a T-shaped network and is used for transforming and improving the impedance of a drain electrode of the GaN power amplification chip. In the conventional practice, the inductance in the GaN power amplification chip root "T" type network is realized by bonding wires, but when the required inductance is large, the inductance is increased by reducing the number of bonding wires and increasing the length of the bonding wires, but this results in a reduction in overcurrent capability, thus making the structure unrealizable. In order to avoid the problem, the invention adopts the ceramic chip to realize the inductor and the capacitor in the T-shaped network, and integrates the capacitor and the inductor on one ceramic chip, thereby avoiding the uncertain factors generated when elements are interconnected and simplifying the assembly. The dielectric constant of the material adopted by the circuit layout of the first-stage output matching network of the T-shaped ceramic chip is 40, and the thickness of the material is 0.25mm.
The second stage output matching network includes multiple serially connected microstrip transmission lines for broadband impedance transformation. Specifically, the second-stage output matching network adopts a network formed by four microstrip transmission lines to perform broadband impedance conversion, and the characteristic impedance and the electrical length of the strip lines are optimized to realize the broadband impedance conversion function.
The third stage output matching network includes a transmission line transformer comprised of a plurality of semi-rigid cables for ultra-wideband impedance transformation. Specifically, the third stage output matching network employsAnd a transmission line transformer which has the same structure as the third-stage input matching network and consists of a semi-rigid cable realizes ultra-wideband impedance transformation, the impedance transformation ratio is 4. By optimizing the characteristic impedance and length of the semi-rigid cable, a compromise between transformation ratio and bandwidth is achieved. Wherein the third stage input matching network shown in FIG. 7 is comprised of 2 semi-rigid cables T 3 And T 4 The semi-rigid cable had a characteristic impedance of 25 ohms and an outer diameter of 2.2mm. The lengths of the 2 semi-rigid cables of the third stage output matching network are 37.1mm and 39.4mm respectively. By optimizing the parameters of the semi-rigid cable, the compromise between the transmission line transformer broadband and the impedance transformation ratio is realized, and the aim of optimal broadband impedance matching is fulfilled.
As shown in fig. 8-10, which are schematic diagrams of electrical performance indexes of the ultra-wideband high-power amplifier provided by the present invention, it can be seen from the diagrams that the operating frequency of the ultra-wideband high-power amplifier provided by the present invention is 0.2GHz to 2.0GHz, the output power is greater than 100W, and the input standing wave is less than 2.5.
And after a simulation result is obtained through simulation, the components can be assembled. Wherein, the components and parts that match mainly have: the circuit comprises a GaN tube core, a first-stage input matching network GaAsMMIC, a first-stage output matching network T-shaped matching ceramic chip circuit, a PCB (multi-section microstrip line realization), a semi-rigid cable of a third-stage input matching network, a semi-rigid cable of a third-stage output matching network, a molybdenum-copper carrier and a red copper carrier plate. And the design, production and manufacture of all elements are finished by means of the current advanced production technology processing platform.
The GaN power amplification chip, the first-stage input matching network GaAsMMIC and the first-stage output matching network T-shaped matching ceramic chip circuit are assembled on a molybdenum-copper carrier, the second-stage output matching network, the third-stage output matching network, the second-stage input matching network, the third-stage input matching network, the input bias network and the output bias network are all assembled on a PCB board, and the molybdenum-copper carrier and the PCB board are welded on the red copper carrier. As shown in fig. 11, a molybdenum-copper carrier 12 and a PCB board 13 are soldered on the red copper carrier 11. Fig. 12 is a schematic structural diagram of the assembled ultra-wideband high-power amplifier, where RFin denotes a radio frequency signal input port, RFout denotes a radio frequency signal output port, vg denotes a gate voltage power-up port, and Vd denotes a drain voltage power-up port.
Specifically, components such as a GaN power amplification chip, a GaAs MMIC, a T-shaped ceramic chip matching circuit and the like are assembled on the molybdenum-copper carrier 12 in a gold-tin solder sintering mode, and the thickness of the molybdenum-copper carrier 12 is 0.2mm.
The molybdenum-copper carrier 12 and the PCB 13 of the assembled chip are welded on the red copper carrier 11 in a welding mode, the semi-rigid cable and other resistance-capacitance elements are welded on the PCB 13, and the chip, the ceramic chip and the PCB are interconnected in a gold bonding wire mode. And a 38-micron gold bonding wire is used for connecting the PCB board 13, the GaAs MMIC matching circuit and the GaN tube core grid electrode, and a 50-micron gold bonding wire is used for connecting the GaN tube core drain electrode, the T-shaped ceramic chip matching circuit and the PCB board. The assembling process of the chip, the ceramic chip, the PCB, the semi-rigid cable and the resistance-capacitance element sequentially adopts temperature gradient operation from high to low, and the assembling reliability of each element is ensured.
The ultra-wideband high-power amplifier provided by the embodiment of the invention adopts a 0.5 mu m GaN HEMT process, a GaAs MMIC passive process, a ceramic chip process and a micro-assembly process to form the ultra-wideband power amplifier with the working frequency of 0.2 GHz-2.0 GHz, the output power of more than 100W in a full frequency band and the input standing wave of less than 2.5. And the input standing wave of similar products at home and abroad is more than 8 at most.
In addition, the invention also provides a transmitter for a wireless communication system, wherein the transmitter comprises the ultra-wideband high-power amplifier. The transmitter may cover the entire 0.2 GHz-2 GHz band. When the working frequency band of 0.2 GHz-2 GHz needs to be covered, the method can be realized by only one set of ultra-wideband high-power amplifier without two sets of power amplifiers. Thereby reducing cost, size and assembly complexity of the transmitter.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the embodiments of the present invention, and they should be construed as being included therein.

Claims (10)

1. An ultra-wideband high power amplifier, comprising:
a signal input for receiving an input signal;
one end of the input matching network is connected with the signal input end, the other end of the input matching network is connected with the grid electrode of the GaN power amplification chip, and the input matching network is used for matching impedance between the grid electrode of the GaN power amplification chip and the signal input end;
one end of the output matching network is connected with the drain electrode of the GaN power amplification chip, and the other end of the output matching network is connected with the signal output end and used for impedance matching in the ultra-wideband;
the input bias network comprises a filter capacitor, one end of the filter capacitor is connected with the grid electrode of the GaN power amplification chip, and the other end of the filter capacitor is connected with an external grid electrode power supply and is used for filtering and bypassing the grid electrode power supply;
and the output bias network comprises a filter capacitor, one end of the filter capacitor is connected with the drain electrode of the GaN power amplification chip, and the other end of the filter capacitor is connected with an external drain electrode power supply and is used for filtering and bypassing the drain electrode power supply.
2. The ultra-wideband high-power amplifier of claim 1, wherein the input matching network comprises three stages of matching networks, namely a first stage input matching network, a second stage input matching network and a third stage input matching network, which are connected in sequence, and the first stage input matching network is connected with a gate of the GaN power amplification chip;
the first-stage input matching network comprises a T-shaped network and an RC parallel network connected with the T-shaped network and is used for transforming and improving the grid impedance of the GaN power amplification chip; the T-type network comprises two inductors connected in series and a capacitor connected with the two inductors at the same time, and the other end of the capacitor is grounded;
the second-stage input matching network comprises a plurality of microstrip lines connected in series and a blocking capacitor connected with the microstrip lines and is used for carrying out impedance transformation on the output impedance of the first-stage input matching network;
the third stage input matching network includes a transmission line transformer comprised of a plurality of semi-rigid cables for ultra-wideband impedance transformation.
3. The ultra-wideband high power amplifier according to claim 2, wherein the first stage input matching network further comprises a pair-ground RC series network, one end of the pair-ground RC series network is connected to one end of the T-type network and one end of the RC parallel network, respectively, and the other end of the pair-ground RC series network is grounded;
the second-stage input matching network further comprises a parallel RC network, one end of the parallel RC network is connected to one end of the last microstrip line in series connection, and the other end of the parallel RC network is connected with the blocking capacitor.
4. The ultra-wideband high power amplifier according to claim 2 or 3, wherein the first stage input matching network is a GaAs microwave monolithic integrated circuit fabricated based on a GaAs passive process.
5. The ultra-wideband high-power amplifier according to claim 2, wherein the output matching network comprises three stages of matching networks, namely a first stage output matching network, a second stage output matching network and a third stage output matching network which are connected in sequence, and the first stage output matching network is connected with the drain electrode of the GaN power amplification chip;
the first-stage output matching network comprises a T-shaped ceramic chip network prepared on a ceramic chip, wherein an inductor in the T-shaped ceramic chip network is a ceramic chip inductor, and a capacitor in the T-shaped ceramic chip network is a ceramic chip capacitor and is used for transforming the impedance of a drain electrode of the GaN power amplification chip;
the second-stage output matching network comprises a plurality of microstrip transmission lines connected in series and is used for broadband impedance transformation;
the third stage output matching network includes a transmission line transformer comprised of a plurality of semi-rigid cables for ultra-wideband impedance transformation.
6. The ultra-wideband high power amplifier of claim 5, wherein the impedance transformation ratio of the third stage input matching network and the third stage output matching network is 4.
7. The ultra-wideband high power amplifier according to claim 5, wherein said third stage input matching network and said third stage output matching network are each comprised of 2 semi-rigid cables, said semi-rigid cables having a characteristic impedance of 25 ohms and an outer diameter of 2.2mm;
the lengths of 2 semi-rigid cables of the third stage input matching network are 44.4mm and 42.1mm respectively;
the lengths of the 2 semi-rigid cables of the third stage output matching network are 37.1mm and 39.4mm respectively.
8. The ultra-wideband high power amplifier of claim 1, wherein the input bias network and the output bias network further comprise bias inductors for isolating radio frequencies in the radio frequency channel and the dc supply channel.
9. The ultra-wideband high power amplifier of claim 5, wherein the GaN power amplifier chip, the first input matching network, the first output matching network are assembled on a molybdenum-copper carrier, and the second output matching network, the third output matching network, the second input matching network, the third input matching network, the input bias network, and the output bias network are all assembled on a PCB board;
and the molybdenum-copper carrier and the PCB are welded on the red copper carrier.
10. A transmitter for a wireless communication system, the transmitter comprising an ultra-wideband high power amplifier according to any of the preceding claims 1 to 9.
CN202210880328.1A 2022-07-25 2022-07-25 Ultra-wideband high-power amplifier and transmitter Pending CN115333488A (en)

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CN202210880328.1A CN115333488A (en) 2022-07-25 2022-07-25 Ultra-wideband high-power amplifier and transmitter

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CN202210880328.1A CN115333488A (en) 2022-07-25 2022-07-25 Ultra-wideband high-power amplifier and transmitter

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CN115333488A true CN115333488A (en) 2022-11-11

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CN202210880328.1A Pending CN115333488A (en) 2022-07-25 2022-07-25 Ultra-wideband high-power amplifier and transmitter

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