CN115332397A - Texturing and cleaning process method of heterojunction solar cell - Google Patents
Texturing and cleaning process method of heterojunction solar cell Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 131
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 131
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 81
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 78
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 76
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 72
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 66
- 238000005406 washing Methods 0.000 claims abstract description 65
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000243 solution Substances 0.000 claims abstract description 35
- 239000007864 aqueous solution Substances 0.000 claims abstract description 32
- 239000000654 additive Substances 0.000 claims abstract description 12
- 230000000996 additive effect Effects 0.000 claims abstract description 9
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
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- 238000005520 cutting process Methods 0.000 claims abstract description 4
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- 229910021641 deionized water Inorganic materials 0.000 claims description 18
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
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- DPXJVFZANSGRMM-UHFFFAOYSA-N acetic acid;2,3,4,5,6-pentahydroxyhexanal;sodium Chemical compound [Na].CC(O)=O.OCC(O)C(O)C(O)C(O)C=O DPXJVFZANSGRMM-UHFFFAOYSA-N 0.000 description 5
- 239000001768 carboxy methyl cellulose Substances 0.000 description 5
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
The invention relates to a texturing and cleaning process method of a heterojunction solar cell, and belongs to the technical field of solar cell preparation. The method comprises the following steps: pre-cleaning an N-type silicon wafer by adopting a pre-cleaning solution composed of potassium hydroxide and hydrogen peroxide so as to remove organic matters and metal impurity pollutants remained on the surface of the N-type silicon wafer after cutting; after washing, adopting a texturing solution consisting of potassium hydroxide and a texturing additive to perform texturing treatment on the silicon wafer; after washing, cleaning the silicon wafer by adopting a mixed aqueous solution consisting of ozone water and hydrochloric acid; after washing, cleaning the silicon wafer by adopting a mixed aqueous solution consisting of ozone water and hydrofluoric acid; after washing, cleaning the silicon wafer by adopting a mixed aqueous solution consisting of hydrogen peroxide and hydrochloric acid; after washing, cleaning the silicon wafer by adopting hydrofluoric acid aqueous solution; and (4) washing the silicon wafer with hot water, and introducing clean air to heat and dry the silicon wafer. The invention has the advantages of less process steps, low cost, good fluff output uniformity, environmental protection and the like.
Description
Technical Field
The invention relates to the technical field of solar cell preparation, in particular to a texturing and cleaning process method of a heterojunction solar cell.
Background
The solar cell is a semiconductor device capable of converting solar energy into electric energy, and photo-generated current is generated in the solar cell under the illumination condition, and the electric energy is output through an electrode. With the continuous progress of solar cell production technology, the development of high efficiency cells with more advantageous conversion efficiency is more and more emphasized. Silicon-based heterojunction solar cells (HJT cells) in which the surface is passivated with an amorphous silicon intrinsic layer (a-Si: H (i)) are one of the major research directions. The silicon-based heterojunction solar cell has the advantages of high conversion efficiency, high open-circuit voltage, no Light Induced Degradation (LID), no electrical degradation (PID), low temperature coefficient, capability of being found on two sides and the like, and the preparation process temperature is close to 200 ℃. The silicon-based heterojunction battery ensures high conversion efficiency, and the thickness of the silicon wafer can be reduced to 100 mu m, so that the consumption of silicon materials is effectively reduced, and the silicon-based heterojunction battery can be used for preparing a bendable battery component.
The main process of the HJT cell technology comprises the main steps of texturing cleaning, growing of amorphous silicon thin films (CVD deposition of boron and phosphorus), double-sided sputtering of TCO transparent conductive films, screen printing, testing and sorting and the like. The most core step of the HJT battery technology is the deposition of an amorphous silicon film, and the specific steps are as follows: the method comprises the following steps of taking an N-type monocrystalline silicon wafer as a substrate, sequentially depositing a front intrinsic amorphous silicon film and a phosphorus-doped amorphous silicon film on the front surface of the etched and cleaned silicon wafer, and sequentially depositing a back intrinsic amorphous silicon film and a boron-doped amorphous silicon film on the back surface of the silicon wafer to form a P-N heterojunction. The heterojunction cell is different from a conventional cell, the requirement on a film layer contact interface is higher, the contact passivation effect of an intrinsic amorphous silicon film layer and an N-type silicon substrate is directly influenced by the cleanliness of the surface of a silicon wafer, and therefore the surface of the silicon wafer is required to be sufficiently clean after texturing and cleaning.
At present, the heterojunction battery texturing and cleaning process in the industry can meet the normal cleaning requirement. As shown in fig. 1, it is a flow chart of a conventional etching cleaning process. As can be seen from FIG. 1, the prior art etching cleaning technology uses a large amount of HF and HNO 3 、NH 4 OH and other chemicals not only have extremely high cost, but also have insufficient uniformity of the suede after suede cleaning, and the suede is madeThe equipment cleaning steps are complicated, the process time is long, simultaneously, a large amount of waste liquid containing nitrogen elements is discharged, the environment is polluted, and the waste of water resources is caused by repeatedly cleaning chemical liquid medicine. Therefore, how to design a texturing cleaning method capable of improving the texture quality of the silicon wafer, shortening the process time, reducing the cost and reducing the environmental pollution is an urgent technical problem to be solved in the industry.
Disclosure of Invention
In order to solve the technical problems, the invention provides a texturing and cleaning process method of a heterojunction solar cell. The technical scheme is as follows:
a texturing and cleaning process method of a heterojunction solar cell comprises the following steps:
s1, pre-cleaning an N-type silicon wafer by adopting a pre-cleaning solution composed of potassium hydroxide and hydrogen peroxide to remove organic matters and metal impurity pollutants remained on the surface of the N-type silicon wafer after cutting;
s2: after the silicon wafer treated in the step S1 is washed for the first time, texturing treatment is carried out on the silicon wafer by adopting a texturing solution composed of potassium hydroxide and texturing additives to form a pyramid textured surface;
s3, after the silicon wafer treated in the step S2 is washed for the second time, carrying out primary cleaning treatment on the silicon wafer after the second washing by adopting a mixed water solution consisting of ozone water and hydrochloric acid so as to remove organic matters and partial metal impurities on the surface of the silicon wafer;
s4, after the silicon wafer treated in the S3 is washed for the third time, a mixed water solution consisting of ozone water and hydrofluoric acid is adopted to carry out secondary washing treatment on the silicon wafer washed for the third time, so that the pyramid suede is corroded and rounded;
s5, after the silicon wafer processed in the S4 is washed for the fourth time, a mixed water solution consisting of hydrogen peroxide and hydrochloric acid is adopted to carry out third washing treatment on the silicon wafer washed for the fourth time so as to remove metal ions on the surface of the silicon wafer;
s6, after the silicon wafer processed in the S5 is washed for the fifth time, fourth washing is carried out on the silicon wafer washed for the fifth time by adopting hydrofluoric acid water solution, so that an oxidation layer on the surface of the silicon wafer is removed;
and S7, washing the silicon wafer treated in the step S6 with hot water, and introducing clean air to heat and dry the silicon wafer.
Optionally, in the pre-cleaning solution of S1, the volume ratio of potassium hydroxide is 1-3%, the volume ratio of hydrogen peroxide is 3-5%, and the balance is deionized water; the temperature of the pre-cleaning is 60-70 ℃ and the time is 120-240s.
Optionally, in the texturing solution of S2, the volume ratio of potassium hydroxide is 4 to 5%, the volume ratio of the texturing additive is 0.1 to 0.4%, and the balance is deionized water; the temperature of the texturing treatment is 70-85 ℃, and the time is 600-850s.
Optionally, in the mixed aqueous solution of ozone water and hydrochloric acid in S3, the volume ratio of hydrochloric acid is 0.1-0.3%, the concentration of ozone water is 25-30ppm, and the balance is deionized water; the time of the first cleaning treatment is 120-240s, and the temperature is normal temperature.
Optionally, in the mixed aqueous solution of ozone water and hydrofluoric acid of S4, the volume ratio of hydrofluoric acid is 0.5-1%, the concentration of ozone water is 30-40ppm, and the balance is deionized water; the time of the second cleaning treatment is 100-150s, and the temperature is normal temperature.
Optionally, in the mixed aqueous solution of hydrogen peroxide and hydrochloric acid in the step S5, the volume ratio of hydrogen peroxide is 8-10%, the volume ratio of hydrochloric acid is 8-10%, and the balance is deionized water; the temperature of the third cleaning treatment is 60-70 ℃, and the cleaning time is 120-240s.
Optionally, in the hydrofluoric acid aqueous solution of S6, the volume ratio of hydrofluoric acid is 10-20%, and the balance is deionized water; the temperature of the fourth cleaning is normal temperature, and the cleaning time is 120-240s.
All the optional technical schemes can be combined at will, and the structure after one-to-one combination is not explained in detail in the invention.
By means of the scheme, the invention has the following beneficial effects:
the mixed aqueous solution consisting of ozone water and hydrochloric acid and the mixed aqueous solution consisting of ozone water and hydrofluoric acid are introduced into the cleaning process after texturing to respectively remove organic matters and partial metal impurities and pairs on the surface of the silicon waferThe pyramid suede is corroded and rounded, so that the step of removing a damage layer in the traditional suede making process flow is removed, the flow is saved, the process time is shortened, the prepared suede is more uniform, and dealkalization and HNO can be performed 3 、NH 4 And OH and the like are used, so that the chemical cost can be saved, and the environmental pollution caused by the discharge of a large amount of waste liquid containing nitrogen elements can be avoided. Through washing after each step, cross contamination among chemical liquid medicines can be avoided, and the service life of the liquid medicines is prolonged. Therefore, the method provided by the embodiment of the invention can obtain better suede surface appearance, ensure complete cleanness of the surface of the silicon wafer, improve the passivation effect of amorphous silicon deposition, prolong the minority carrier lifetime and greatly improve the performance of the heterojunction solar cell. The invention has the advantages of less process steps, low cost, good velvet outlet uniformity, environmental protection and the like.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
Fig. 1 is a flow chart of a conventional texturing cleaning process.
Fig. 2 is a flow chart of the present invention.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
As shown in fig. 1, the etching cleaning process method for the heterojunction solar cell provided by the invention comprises the following steps:
s1, pre-cleaning an N-type silicon wafer by adopting a pre-cleaning liquid composed of potassium hydroxide and hydrogen peroxide so as to remove organic matters and metal impurity pollutants remained on the surface of the N-type silicon wafer after cutting.
In the pre-cleaning liquid of S1, the volume ratio of potassium hydroxide is 1-3%, the volume ratio of hydrogen peroxide is 3-5%, and the balance is deionized water; the temperature of the pre-cleaning is 60-70 ℃ and the time is 120-240s.
S2: and (3) after the silicon wafer treated in the step (S1) is washed for the first time, texturing treatment is carried out on the silicon wafer by adopting a texturing solution consisting of potassium hydroxide and texturing additives to form a pyramid textured surface.
In the texturing solution of S2, the volume ratio of potassium hydroxide is 4-5%, the volume ratio of a texturing additive is 0.1-0.4%, and the balance is deionized water; the temperature of the texturing treatment is 70-85 ℃, and the time is 600-850s. The texturing additive is a mixture of sodium carboxymethylcellulose, polyethylene glycol and the like.
And S3, after the silicon wafer treated in the step S2 is washed for the second time, carrying out primary cleaning treatment on the silicon wafer after the second washing by adopting a mixed water solution consisting of ozone water and hydrochloric acid so as to remove organic matters and partial metal impurities on the surface of the silicon wafer.
Wherein in the mixed aqueous solution consisting of the ozone water of the S3 and the hydrochloric acid, the volume ratio of the hydrochloric acid is 0.1-0.3%, the concentration of the ozone water is 25-30ppm, and the rest is deionized water; the time of the first cleaning treatment is 120-240s, and the temperature is normal temperature.
And S4, after the silicon wafer treated in the step S3 is washed for the third time, carrying out secondary washing treatment on the silicon wafer washed for the third time by adopting a mixed water solution consisting of ozone water and hydrofluoric acid so as to corrode and round the pyramid suede.
Wherein in the mixed aqueous solution composed of the ozone water and the hydrofluoric acid of S4, the volume ratio of the hydrofluoric acid is 0.5-1%, the concentration of the ozone water is 30-40ppm, and the rest is deionized water; the time of the second cleaning treatment is 100-150s, and the temperature is normal temperature.
And S5, after the silicon wafer treated in the step S4 is washed for the fourth time, a mixed water solution consisting of hydrogen peroxide and hydrochloric acid is adopted to carry out third washing treatment on the silicon wafer washed for the fourth time, so as to remove metal ions on the surface of the silicon wafer.
Wherein in the mixed aqueous solution composed of hydrogen peroxide and hydrochloric acid of S5, the volume ratio of hydrogen peroxide is 8-10%, the volume ratio of hydrochloric acid is 8-10%, and the balance is deionized water; the temperature of the third cleaning treatment is 60-70 ℃, and the cleaning time is 120-240s.
And S6, after the silicon wafer processed in the step S5 is washed for the fifth time, the silicon wafer washed for the fifth time is washed for the fourth time by adopting hydrofluoric acid water solution, so that an oxidation layer on the surface of the silicon wafer is removed.
In the hydrofluoric acid aqueous solution of S6, the volume ratio of hydrofluoric acid is 10-20%, and the balance is deionized water; the temperature of the fourth cleaning is normal temperature, and the cleaning time is 120-240s.
And S7, washing the silicon wafer treated in the step S6 with hot water, and introducing clean air to heat and dry the silicon wafer.
It should be noted that the purpose of the water washing in each step is to remove the chemical liquid in the previous step, so as to avoid introducing the chemical liquid into the next tank to cause cross contamination of chemicals. The washing time is not specially limited, and the time is shortened as much as possible under the condition that the liquid medicine is cleaned.
As shown in table one, which is a comparative table of electrical properties of the heterojunction solar cell (comparative example) manufactured by the prior texturing cleaning process and the heterojunction solar cell (example) manufactured by the texturing cleaning process provided in the example of the present invention, the table one is based on the electrical properties of the comparative example.
Watch 1
From Table one, we can see: the texture surface of the battery piece prepared by the technical scheme of the embodiment of the invention has good uniformity, the efficiency is 0.15% higher than that of the conventional heterojunction solar battery, and the open-circuit voltage and the short-circuit current are improved.
According to the texturing and cleaning process method provided by the embodiment of the invention, an ozone water solution system (a mixed water solution consisting of ozone water and hydrochloric acid and a mixed water solution consisting of ozone water and hydrofluoric acid) is introduced into cleaning after texturing to clean a textured silicon wafer, so that the step of removing a damage layer in the traditional texturing and cleaning process flow is eliminated, the use of dealkalization can be completely performed during post-cleaning, and a better surface appearance of a textured surface can be obtained. Through washing after every step, can avoid the cross contamination between chemical liquid medicine, prolong the life of liquid medicine, guaranteed that the silicon chip surface is clean completely, promoted the sedimentary passivation effect of amorphous silicon, minority carrier lifetime obtains promoting, has greatly improved heterojunction solar cell's performance.
Several specific embodiments of the invention are described below:
example 1
The invention provides a texturing and cleaning process method of a heterojunction solar cell, which comprises the following steps:
s1, pre-cleaning an N-type silicon wafer by adopting a pre-cleaning liquid consisting of potassium hydroxide and hydrogen peroxide, wherein the volume ratio of the potassium hydroxide is 1.5%, the volume ratio of the hydrogen peroxide is 5%, the pre-cleaning temperature is 70 ℃, and the time is 240S.
And S2, after the silicon wafer treated in the S1 is washed for the first time, adopting a texturing solution with the volume ratio of potassium hydroxide being 5% and the volume ratio of a texturing additive being 0.4% of the mixture of sodium carboxymethylcellulose, polyethylene glycol and the like to perform texturing on the silicon wafer, wherein the texturing temperature is 72 ℃ and the time is 600S.
And S3, after the silicon wafer treated in the step S2 is washed for the second time, carrying out primary cleaning treatment on the silicon wafer after the second washing by using a mixed aqueous solution consisting of ozone water and hydrochloric acid, wherein the volume ratio of the hydrochloric acid is 0.2%, and the concentration of the ozone water is 30ppm, and the primary cleaning treatment lasts for 120S at normal temperature.
And S4, after the silicon wafer treated in the step S3 is washed for the third time, carrying out secondary cleaning treatment on the silicon wafer after the third washing by adopting a mixed aqueous solution consisting of 0.5% of hydrofluoric acid by volume and 35ppm of ozone water, wherein the cleaning time of the secondary cleaning treatment is 100S at normal temperature.
And S5, after the silicon wafer treated in the step S4 is washed for the fourth time, carrying out third washing treatment on the silicon wafer after the fourth washing treatment by adopting a mixed aqueous solution consisting of hydrogen peroxide and hydrochloric acid, wherein the volume ratio of hydrogen peroxide is 8% and the volume ratio of hydrochloric acid is 8%, the washing temperature of the third washing treatment is set to be 70 ℃, and the washing time is 120S.
And S6, after the silicon wafer treated in the step S5 is washed for the fifth time, washing the silicon wafer washed for the fifth time for the fourth time by adopting a hydrofluoric acid aqueous solution with the hydrofluoric acid accounting for 20% of the volume of the hydrofluoric acid, and washing the silicon wafer for the fourth time for 120S at normal temperature.
And S7, washing the silicon wafer treated in the step S6 with hot water, and introducing clean air to heat and dry the silicon wafer.
Example 2
The invention provides a texturing and cleaning process method of a heterojunction solar cell, which comprises the following steps:
s1, pre-cleaning an N-type silicon wafer by adopting a pre-cleaning liquid composed of potassium hydroxide and hydrogen peroxide, wherein the volume ratio of the potassium hydroxide is 1%, the volume ratio of the hydrogen peroxide is 3%, the pre-cleaning temperature is 60 ℃, and the time is 120S.
And S2, after the silicon wafer treated in the step S1 is washed for the first time, texturing the silicon wafer by using a texturing solution with the volume ratio of potassium hydroxide being 4% and the volume ratio of a texturing additive being 0.1% of a mixture of sodium carboxymethylcellulose, polyethylene glycol and the like at the texturing temperature of 70 ℃ for 600S.
And S3, after the silicon wafer treated in the step S2 is washed for the second time, carrying out primary cleaning treatment on the silicon wafer after the second washing by using a mixed aqueous solution consisting of ozone water and hydrochloric acid, wherein the volume ratio of the hydrochloric acid is 0.1%, and the concentration of the ozone water is 25ppm, and the primary cleaning treatment lasts for 120S at normal temperature.
And S4, after the silicon wafer treated in the step S3 is washed for the third time, carrying out secondary cleaning treatment on the silicon wafer after the third washing by adopting a mixed aqueous solution consisting of 0.5% of hydrofluoric acid by volume and 30ppm of ozone water, wherein the cleaning time of the secondary cleaning treatment is 100S at normal temperature.
And S5, after the silicon wafer treated in the step S4 is washed for the fourth time, carrying out third washing treatment on the silicon wafer after the fourth washing treatment by adopting a mixed aqueous solution consisting of hydrogen peroxide and hydrochloric acid, wherein the volume ratio of hydrogen peroxide is 8% and the volume ratio of hydrochloric acid is 8%, the washing temperature of the third washing treatment is set to be 60 ℃, and the washing time is 120S.
And S6, after the silicon wafer processed in the S5 is washed for the fifth time, adopting hydrofluoric acid water solution with the hydrofluoric acid volume ratio of 10% to wash the silicon wafer after the fifth time for the fourth time, and washing the silicon wafer for the fourth time for 120S at normal temperature.
And S7, washing the silicon wafer treated in the step S6 with hot water, and introducing clean air to heat and dry the silicon wafer.
Example 3
The invention provides a texturing and cleaning process method of a heterojunction solar cell, which comprises the following steps:
s1, pre-cleaning an N-type silicon wafer by adopting a pre-cleaning liquid composed of potassium hydroxide and hydrogen peroxide, wherein the volume ratio of the potassium hydroxide is 3%, the volume ratio of the hydrogen peroxide is 5%, the pre-cleaning temperature is 70 ℃, and the time is 240S.
And S2, after the silicon wafer treated in the step S1 is washed for the first time, texturing the silicon wafer by using a texturing solution with the volume ratio of potassium hydroxide being 5% and the volume ratio of a texturing additive being 0.4% of a mixture of sodium carboxymethylcellulose, polyethylene glycol and the like at the texturing temperature of 85 ℃ for 850 seconds.
And S3, after the silicon wafer treated in the S2 is subjected to second washing, carrying out first washing treatment on the silicon wafer subjected to second washing by using a mixed aqueous solution consisting of ozone water and hydrochloric acid, wherein the volume ratio of the hydrochloric acid is 0.3%, and the concentration of the ozone water is 30ppm, and the first washing treatment is carried out for 240S at normal temperature.
And S4, after the silicon wafer treated in the step S3 is washed for the third time, carrying out secondary cleaning treatment on the silicon wafer after the third washing by using a mixed aqueous solution consisting of 1% of hydrofluoric acid by volume and 40ppm of ozone water, wherein the second cleaning treatment is carried out at normal temperature for 150S.
And S5, after the silicon wafer treated in the step S4 is washed for the fourth time, carrying out third washing treatment on the silicon wafer after the fourth washing treatment by adopting a mixed aqueous solution consisting of hydrogen peroxide and hydrochloric acid, wherein the volume percentage of hydrogen peroxide is 10% and the volume percentage of hydrochloric acid is 10%, the washing temperature of the third washing treatment is set to be 70 ℃, and the washing time is 240S.
And S6, after the silicon wafer processed in the S5 is washed for the fifth time, adopting hydrofluoric acid water solution with the hydrofluoric acid volume ratio of 20% to wash the silicon wafer after the fifth time, and washing the silicon wafer for the fourth time at normal temperature for 240S.
And S7, washing the silicon wafer treated in the step S6 with hot water, and introducing clean air to heat and dry the silicon wafer.
Example 4
The invention provides a texturing and cleaning process method of a heterojunction solar cell, which comprises the following steps:
s1, pre-cleaning an N-type silicon wafer by adopting a pre-cleaning liquid composed of potassium hydroxide and hydrogen peroxide, wherein the volume ratio of the potassium hydroxide is 2%, the volume ratio of the hydrogen peroxide is 4%, the pre-cleaning temperature is 70 ℃, and the time is 180S.
And S2, after the silicon wafer treated in the S1 is washed for the first time, texturing the silicon wafer by using a texturing solution with the volume ratio of potassium hydroxide being 4.5% and the volume ratio of a texturing additive being 0.25% of a mixture of sodium carboxymethyl cellulose, polyethylene glycol and the like at the texturing temperature of 78 ℃ for 675S.
And S3, after the silicon wafer treated in the step S2 is washed for the second time, carrying out primary cleaning treatment on the silicon wafer after the second washing by using a mixed aqueous solution consisting of ozone water and hydrochloric acid, wherein the volume ratio of the hydrochloric acid is 0.2%, and the concentration of the ozone water is 27ppm, and the primary cleaning treatment lasts 180S at normal temperature.
And S4, after the silicon wafer treated in the step S3 is washed for the third time, carrying out secondary cleaning treatment on the silicon wafer after the third washing by adopting a mixed aqueous solution consisting of 0.75% of hydrofluoric acid by volume and 35ppm of ozone water, wherein the second cleaning place is cleaned for 125S at normal temperature.
And S5, after the silicon wafer treated in the step S4 is washed for the fourth time, carrying out third washing treatment on the silicon wafer after the fourth washing treatment by adopting a mixed aqueous solution consisting of hydrogen peroxide and hydrochloric acid, wherein the volume ratio of hydrogen peroxide is 9% and the volume ratio of hydrochloric acid is 9%, the washing temperature of the third washing treatment is set to be 65 ℃, and the washing time is 180S.
And S6, after the silicon wafer treated in the step S5 is washed for the fifth time, washing the silicon wafer washed for the fifth time for the fourth time by adopting a hydrofluoric acid aqueous solution with the hydrofluoric acid accounting for 15% of the volume of the hydrofluoric acid, and washing the silicon wafer for the fourth time for 180S at normal temperature.
And S7, washing the silicon wafer treated in the step S6 with hot water, and introducing clean air to heat and dry the silicon wafer.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, it should be noted that, for those skilled in the art, many modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (7)
1. The texturing and cleaning process method for the heterojunction solar cell is characterized by comprising the following steps:
s1, pre-cleaning an N-type silicon wafer by adopting a pre-cleaning solution composed of potassium hydroxide and hydrogen peroxide to remove organic matters and metal impurity pollutants remained on the surface of the N-type silicon wafer after cutting;
s2: after the silicon wafer treated in the step S1 is washed for the first time, texturing treatment is carried out on the silicon wafer by adopting a texturing solution composed of potassium hydroxide and texturing additives to form a pyramid textured surface;
s3, after the silicon wafer processed in the S2 is washed for the second time, a mixed water solution composed of ozone water and hydrochloric acid is adopted to carry out primary cleaning treatment on the silicon wafer after the second washing so as to remove organic matters and partial metal impurities on the surface of the silicon wafer;
s4, after the silicon wafer treated in the S3 is washed for the third time, a mixed water solution consisting of ozone water and hydrofluoric acid is adopted to carry out secondary washing treatment on the silicon wafer washed for the third time, so that the pyramid suede is corroded and rounded;
s5, after the silicon wafer processed in the S4 is washed for the fourth time, a mixed water solution consisting of hydrogen peroxide and hydrochloric acid is adopted to carry out third washing treatment on the silicon wafer washed for the fourth time so as to remove metal ions on the surface of the silicon wafer;
s6, after the silicon wafer processed in the S5 is washed for the fifth time, fourth washing is carried out on the silicon wafer washed for the fifth time by adopting hydrofluoric acid water solution, so that an oxidation layer on the surface of the silicon wafer is removed;
and S7, washing the silicon wafer treated in the step S6 with hot water, and introducing clean air to heat and dry the silicon wafer.
2. The texturing and cleaning process method for the heterojunction solar cell according to claim 1, wherein in the pre-cleaning solution of S1, the volume ratio of potassium hydroxide is 1-3%, the volume ratio of hydrogen peroxide is 3-5%, and the balance is deionized water; the temperature of the pre-cleaning is 60-70 ℃ and the time is 120-240s.
3. The solar cell texturing and cleaning process method according to claim 1, wherein in the texturing solution of S2, the volume ratio of potassium hydroxide is 4-5%, the volume ratio of texturing additive is 0.1-0.4%, and the balance is deionized water; the temperature of the texturing treatment is 70-85 ℃, and the time is 600-850s.
4. The solar cell texturing and cleaning process method according to claim 1, wherein in the mixed aqueous solution of ozone water and hydrochloric acid in the S3, the volume ratio of hydrochloric acid is 0.1-0.3%, the concentration of ozone water is 25-30ppm, and the balance is deionized water; the time of the first cleaning treatment is 120-240s, and the temperature is normal temperature.
5. The solar cell texturing and cleaning process method according to claim 1, wherein in the mixed aqueous solution of ozone water and hydrofluoric acid of S4, the volume ratio of hydrofluoric acid is 0.5-1%, the concentration of ozone water is 30-40ppm, and the balance is deionized water; the time of the second cleaning treatment is 100-150s, and the temperature is normal temperature.
6. The texturing and cleaning process method for the heterojunction solar cell according to claim 1, wherein in the mixed aqueous solution composed of hydrogen peroxide and hydrochloric acid of S5, the volume ratio of hydrogen peroxide is 8-10%, the volume ratio of hydrochloric acid is 8-10%, and the balance is deionized water; the temperature of the third cleaning treatment is 60-70 ℃, and the cleaning time is 120-240s.
7. The solar cell texturing and cleaning process method according to claim 1, wherein in the hydrofluoric acid aqueous solution of S6, the volume ratio of hydrofluoric acid is 10-20%, and the rest is deionized water; the temperature of the fourth cleaning is normal temperature, and the cleaning time is 120-240s.
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