CN115332034A - Etching chamber cleaning system, cleaning method and semiconductor etching equipment - Google Patents
Etching chamber cleaning system, cleaning method and semiconductor etching equipment Download PDFInfo
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- CN115332034A CN115332034A CN202110507244.9A CN202110507244A CN115332034A CN 115332034 A CN115332034 A CN 115332034A CN 202110507244 A CN202110507244 A CN 202110507244A CN 115332034 A CN115332034 A CN 115332034A
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- 238000005530 etching Methods 0.000 title claims abstract description 273
- 238000004140 cleaning Methods 0.000 title claims abstract description 220
- 238000000034 method Methods 0.000 title claims abstract description 193
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 235000012431 wafers Nutrition 0.000 claims description 159
- 238000011156 evaluation Methods 0.000 claims description 3
- 230000007613 environmental effect Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- 239000006227 byproduct Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
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Abstract
The invention relates to an etching chamber cleaning system, a cleaning method and semiconductor etching equipment, belongs to the technical field of integrated circuit manufacturing, and solves the problem of etching process drift caused by poor environmental stability of the existing etching chamber. The etching chamber cleaning system comprises a user operation unit, a wafer process acquisition unit and an etching chamber cleaning unit, wherein the wafer process acquisition unit is connected with etching equipment and is used for collecting process parameters in the wafer etching process; the user operation unit can set etching chamber cleaning parameters according to the data collected by the wafer process collection unit; the etching chamber cleaning unit is connected with the etching equipment and used for controlling the etching equipment to execute a chamber etching cleaning process. The wafer etching device can effectively remove particles inside the etching chamber, maintain the environmental consistency of the etching chamber, ensure the stability of technological parameters such as the etching speed and the etching uniformity of the wafer, avoid the drift of the etching process and effectively improve the yield of the wafer.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing, in particular to an etching chamber cleaning system, an etching chamber cleaning method and semiconductor etching equipment.
Background
Etching, which is one of the key processes in the integrated circuit manufacturing technology, aims to completely copy a mask pattern onto the surface of a semiconductor wafer, and generates non-volatile byproducts during the etching process, wherein the byproducts are deposited on the inner wall of an etching chamber. With the progress of the etching process, the deposits on the inner wall of the etching chamber are accumulated continuously, so that the environment of the etching chamber is changed continuously, the change can influence the etching rate and the etching uniformity, the drift of the etching process is caused, and the line width of the wafer deviates out of the standard range in a large amount.
In the prior art, the most common cleaning method is dry etch cleaning, which often uses NF 3 +O 2 In combination with removing the by-products from the inner wall of the chamber, a layer of polymer similar to silicon dioxide is deposited on the inner wall of the etching chamber after cleaning, however, in the existing mass production process, high-strength self-cleaning is only performed between batches of wafers and single wafers in a general manner, and the chamber cleaning cannot be regularly and effectively performed according to the process differences between different batches of wafers.
The invention provides an etching chamber cleaning system, a cleaning method and semiconductor etching equipment, which determine the wafer-free cleaning parameters of an etching chamber through the comparative evaluation of wafer process conditions between wafers and between batches, regularly and effectively remove particles in the etching chamber, so as to maintain the environmental consistency of the etching chamber, ensure the stability of process parameters such as the etching rate, the etching amount and the etching time of wafers and avoid the drift of the etching process.
Disclosure of Invention
In view of the foregoing analysis, embodiments of the present invention provide an etching chamber cleaning system, a cleaning method, and a semiconductor etching apparatus, so as to solve the problem of etching process drift caused by poor environmental stability of the existing etching chamber.
The purpose of the invention is mainly realized by the following technical scheme:
in one aspect, the invention provides an etching chamber cleaning system, which comprises a user operation unit, a wafer process acquisition unit and an etching chamber cleaning unit.
The wafer process acquisition unit is connected with the etching equipment and is used for collecting process parameters in the wafer etching process;
the user operation unit can set etching chamber cleaning parameters according to the data collected by the wafer process collection unit;
the etching chamber cleaning unit is connected with the etching equipment and used for controlling the etching equipment to execute a chamber etching cleaning process.
Further, the etch chamber cleaning system is a waferless cleaning system.
In another aspect, the invention provides a semiconductor etching apparatus comprising the above etching chamber cleaning system.
In another aspect, the present invention provides a method for cleaning an etching chamber, including:
starting an etching chamber cleaning system, and acquiring first process parameters of a first batch of wafer etching process by a wafer process acquisition unit;
the wafer process acquisition unit transmits the first process parameter to the user operation unit, and the user operation unit sets a first cleaning parameter of the cleaning system according to the first process parameter;
the user operation unit transmits the first cleaning parameters to the etching chamber cleaning unit, and the etching chamber cleaning unit controls the etching chamber to perform cleaning processing by adopting the first cleaning parameters;
and after the etching chamber finishes the cleaning treatment, carrying out etching process treatment on the first batch of wafers, and cleaning the etching chamber by adopting a first cleaning parameter every time N wafers are etched in the etching process until the first batch of wafers finish the etching process, and starting to carry out etching treatment on the second batch of wafers.
Further, after the first batch of wafers are etched and before the second batch of wafers start the etching process, the method includes:
the wafer process acquisition unit acquires a second process parameter of the second batch of wafer etching process, evaluates and compares the first process parameter and the second process parameter, and determines a cleaning parameter of the second batch of wafers according to the evaluation and comparison conditions of the first process parameter and the second process parameter.
Further, when the first process parameter is the same as the second process parameter, the first cleaning parameter is adopted to clean the etching chamber in the second batch of wafer etching process.
And further, when the first process parameter is different from the second process parameter, setting a second cleaning parameter of the cleaning system, and cleaning the etching chamber by adopting the second cleaning parameter in the etching process of the second batch of wafers.
Further, the range of N is more than or equal to 1 and less than or equal to 25.
Further, the cleaning method of the etching chamber is suitable for one or more wafer batches of different etching processes.
Further, the first process parameter includes etching amount and etching time in the wafer etching process.
Further, the first process parameter further includes the number of wafers in the wafer etching process.
Further, the first cleaning parameters include a first pre-cleaning parameter and a first post-cleaning parameter.
Further, the first pre-cleaning parameter and the first post-cleaning parameter include rf power, cleaning gas flow rate, and cleaning time during the cleaning process.
Compared with the prior art, the invention can realize at least one of the following beneficial effects:
1. aiming at wafers with the same processing procedure and different batches, the invention adopts the same cleaning parameters to clean the etching chamber, thereby ensuring the environmental stability of the etching chamber and effectively improving the etching forming efficiency among the wafers with the same processing procedure and different batches.
2. Aiming at wafers with different processes and different batches, the invention evaluates and determines the cleaning parameters aiming at the wafers with different batches by comparing the process parameters of the wafers with different batches, thereby ensuring the optimization of the cleaning parameters and maintaining the environmental consistency of the etching chamber.
3. According to the invention, the difference of the process conditions between single wafers, multiple wafers and between batches of wafers is accurately evaluated, the cleaning parameters of the etching chamber are determined, and the particles in the etching chamber are effectively removed, so that the environmental consistency of the etching chamber is maintained, the stability of the process parameters such as the etching rate and the etching uniformity of the wafers is ensured, the drift of the etching process is avoided, and the wafer yield is effectively improved.
In the invention, the technical schemes can be combined with each other to realize more preferable combination schemes. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
The drawings, in which like reference numerals refer to like parts throughout, are for the purpose of illustrating particular embodiments only and are not to be considered limiting of the invention.
FIG. 1 is a schematic view of an etch chamber cleaning system of the present invention;
FIG. 2 is a schematic flow chart of an etching chamber cleaning method of the present invention.
Detailed Description
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate preferred embodiments of the invention and together with the description, serve to explain the principles of the invention and not to limit the scope of the invention.
In the description of the embodiments of the present invention, it should be noted that the term "connected" is to be understood broadly, and may be, for example, fixed, detachable, or integrally connected, and may be mechanically or electrically connected, and may be directly or indirectly connected through an intermediate medium, unless otherwise specifically stated or limited. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The terms "top," "bottom," "at 8230; \8230above," "below," and "at 8230; \8230above," and "above" are used throughout to describe relative positions of components with respect to the device, such as the relative positions of the top and bottom substrates inside the device. It will be appreciated that the devices are multifunctional, independent of their orientation in space.
Example 1
In one embodiment of the present invention, a system for cleaning an etching chamber is disclosed, as shown in fig. 1, comprising: the device comprises a wafer process acquisition unit, a user operation unit and an etching chamber cleaning unit.
The wafer process acquisition unit is connected with the etching equipment through a data line, and the wafer process acquisition unit is connected with the user operation unit through a data line.
It should be noted that the wafer process collecting unit can collect parameters used by the wafer etching process from the etching device, and feed back the relevant information of the process parameters to the user operation unit.
The user operation unit is connected with the etching chamber cleaning unit through a data line, and the etching chamber cleaning unit is connected with the etching equipment through a data line.
The user operation unit makes a judgment according to the technological parameters of wafer etching, sets the chamber cleaning parameters, transmits the set chamber cleaning parameters to the etching chamber cleaning unit through the data line, and the etching chamber cleaning unit controls the etching equipment to perform corresponding operation.
Example 2
In yet another embodiment of the present invention, a semiconductor etching apparatus is disclosed, comprising the etching chamber cleaning system provided in embodiment 1.
Example 3
In another embodiment of the present invention, a method for cleaning an etching chamber is disclosed, as shown in fig. 2, comprising:
starting a cleaning system of the etching chamber, and acquiring first process parameters of a first batch of wafer etching process by a wafer process acquisition unit;
the wafer process acquisition unit transmits the first process parameter to the user operation unit, and the user operation unit sets a first cleaning parameter of the cleaning system according to the first process parameter;
the user operation unit transmits the first cleaning parameters to the etching chamber cleaning unit, and the etching chamber cleaning unit controls the etching chamber to perform cleaning treatment by adopting the first cleaning parameters;
after the etching chamber finishes the cleaning treatment, the first batch of wafers starts to carry out the etching process;
in the process of etching the first batch of wafers, cleaning the etching chamber by adopting first cleaning parameters every time when N wafers are etched, wherein N is within the range of 1-25;
after the first batch of wafers are etched, before the second batch of wafers start the etching process, obtaining a second process parameter of the second batch of wafers in the etching process, evaluating and comparing the first process parameter and the second process parameter, when the first process parameter and the second process parameter are the same, cleaning the etching chamber by adopting the first cleaning parameter, when the first process parameter and the second process parameter are different, setting a second cleaning parameter of the cleaning system, cleaning the etching chamber by adopting the second cleaning parameter, and in the process of etching the subsequent batch of wafers, setting the parameter of the cleaning system by adopting the same method.
Preferably, in setting the second cleaning parameter, it is determined whether the first cleaning parameter can be extended or the second cleaning parameter can be reset to achieve the optimal cleaning effect based on the evaluation of the first process parameter and the second process parameter.
Preferably, the first cleaning parameter and the second cleaning parameter include a pre-cleaning parameter and a post-cleaning parameter, the pre-cleaning parameter is a cleaning parameter before etching of the same batch of wafers, and the post-cleaning parameter is a cleaning parameter during the etching process of the same batch of wafers.
Compared with the prior art, the method has the advantages that the wafer process parameters between wafers and between batches are accurately collected, the difference between the process parameters is compared, the cleaning parameters of the etching chamber are efficiently and flexibly set, the particles in the etching chamber are regularly and effectively removed, the environmental stability of the etching chamber is maintained, the stability of the process parameters such as the etching rate and the etching uniformity of the wafer is ensured, the drift of the etching process is avoided, and the yield of the wafer is improved.
Specifically, the first process parameter and the second process parameter include an etching amount and an etching time in a wafer etching process.
Specifically, the first process parameter and the second process parameter further include the number of wafers in the wafer etching process.
It should be noted that, in the process of etching the wafer, the etching amount and the etching time determine the amount of the etching by-product, and the range of the cleaning parameter can be evaluated by analyzing the etching amount and the etching time of the wafer. Meanwhile, the number of the wafers is combined, the period of cleaning the etching chamber every time can be determined, and the wafer forming efficiency is improved.
Preferably, the pre-clean parameters and post-clean parameters include rf power, cleaning gas flow rate, and cleaning time used in the waferless cleaning process.
Example 4
In another embodiment of the present invention, a method for cleaning an etching chamber is disclosed, wherein the first and second batches of wafers have the same etching process parameters, comprising:
and starting an etching chamber cleaning system, and collecting etching amount, etching time and wafer quantity used in the etching process of the first batch of wafers.
And then, setting a first cleaning parameter of the etching chamber cleaning system according to the etching amount, the etching time and the wafer number used in the etching process of the first batch of wafers, wherein the first cleaning parameter comprises a first pre-cleaning parameter and a first post-cleaning parameter, the first pre-cleaning parameter comprises pre-cleaning radio frequency power, cleaning gas flow and cleaning time, and the first post-cleaning parameter comprises post-cleaning radio frequency power, cleaning gas flow and cleaning time.
Preferably, for a wafer lot with a large etching amount and a long etching time (e.g., high aspect ratio contact hole etching), the cleaning process can be set to be applied to each wafer etching gap.
And then, carrying out wafer-free pre-cleaning treatment on the etching chamber by adopting the set first pre-cleaning parameters, and starting the etching process of the first batch of wafers after the wafer-free pre-cleaning treatment is finished.
During the process of etching the first batch of wafers, after the first wafer finishes the etching process, the first wafer is moved out of the etching chamber, the etching chamber is cleaned by adopting a set first post-cleaning parameter, after the cleaning process of the etching chamber is finished, the second wafer is etched, after the second wafer finishes the etching process, the second wafer is moved out of the etching chamber, then the etching chamber is cleaned by adopting the set first post-cleaning parameter, and the steps are sequentially circulated until the etching process of the twenty-fifth wafer is finished.
After the first batch of wafers finish the etching process, the etching chamber is continuously cleaned by adopting the first post-cleaning parameters, and then the etching process of the second batch of wafers is carried out.
Example 5
In another embodiment of the present invention, a method for cleaning an etching chamber is disclosed, wherein the first and second batches of wafers have different etching process parameters, comprising:
and starting an etching chamber cleaning system, and collecting the etching amount, etching time and wafer number used in the first batch of wafer etching process.
And then, setting a first cleaning parameter of the non-wafer cleaning system according to the etching amount, the etching time and the wafer number used in the first batch of wafer etching process, wherein the first cleaning parameter comprises a first pre-cleaning parameter and a first post-cleaning parameter, the first pre-cleaning parameter comprises pre-cleaning radio frequency power, cleaning gas flow and cleaning time, and the first post-cleaning parameter comprises post-cleaning radio frequency power, cleaning gas flow and cleaning time.
And then, carrying out wafer-free pre-cleaning treatment on the etching chamber by adopting the set first pre-cleaning parameters, and starting the etching process on the first batch of wafers after the wafer-free pre-cleaning treatment is finished.
During the etching process of the first batch of wafers, for etching equipment comprising only one chamber, sequentially carrying out etching process treatment on the first three wafers, after the etching process is finished, moving the third wafer out of the etching chamber, cleaning the etching chamber by using a set first post-cleaning parameter, after the cleaning treatment of the etching chamber is finished, sequentially carrying out etching treatment on the fourth wafer, the fifth wafer and the sixth wafer, after the etching process of the sixth wafer is finished, moving the sixth wafer out of the etching chamber, cleaning the etching chamber by using a set first post-cleaning parameter, sequentially circulating, and cleaning the etching chamber by using a set first post-cleaning parameter until the etching process of the twenty-fourth wafer is finished every time when the etching of the third wafer is finished, and then cleaning the etching chamber by using a first post-cleaning parameter.
And after the cleaning treatment is finished, etching the twenty-fifth wafer of the first batch of wafers, and after the etching is finished, cleaning the etching chamber.
And then, before etching the second batch of wafers, collecting the etching amount, the etching time and the number of wafers in the etching process of the second batch of wafers, wherein the etching processes of the first batch of wafers and the second batch of wafers are different in the embodiment, and the optimal second cleaning parameter of the etching chamber is set according to the difference between the etching amount, the etching time and the number of wafers in the etching process of the first batch of wafers and the etching process of the second batch of wafers.
The second cleaning parameters include a second pre-cleaning parameter including pre-cleaning rf power, cleaning gas flow rate, and cleaning time, and a second post-cleaning parameter including post-cleaning rf power, cleaning gas flow rate, and cleaning time.
And cleaning the etching chamber by adopting a second pre-cleaning parameter before etching the second batch of wafers, wherein every three wafers are etched in the process of etching the second batch of wafers, and the etching chamber is cleaned by adopting a set second post-cleaning parameter until the etching of the second batch of wafers is finished.
Example 6
In another embodiment of the present invention, a method for cleaning an etching chamber by using the semiconductor etching apparatus provided in embodiment 2 is disclosed, wherein the first and second batches of wafer etching processes are different, and the steps are substantially the same as those in embodiment 5, except that:
in the process of carrying out an etching process on a first batch of wafers, for an etching device only comprising one chamber, after the etching process is sequentially finished on the first five wafers, the fifth wafer is moved out of the etching chamber, the etching chamber is cleaned by adopting a set first post-cleaning parameter, after the cleaning process of the etching chamber is finished, the sixth wafer to the tenth wafer are sequentially etched, after the etching process is finished on the tenth wafer, the tenth wafer is moved out of the etching chamber, the etching chamber is cleaned by adopting a set first post-cleaning parameter, the process is sequentially circulated, and when the etching of the five wafers is finished, the etching chamber is cleaned by adopting the set first post-cleaning parameter until the etching process of the twenty-fifth wafer is finished, the etching chamber is not cleaned.
And then, before etching the second batch of wafers, collecting the etching amount, the etching time and the number of the wafers in the etching process of the second batch of wafers, wherein the etching processes of the first batch of wafers are different from the etching processes of the second batch of wafers in the embodiment, and setting an optimal second cleaning parameter of the etching chamber according to the difference between the etching amount, the etching time and the number of the wafers in the etching process of the first batch of wafers and the second batch of wafers.
The second cleaning parameters include a second pre-cleaning parameter including pre-cleaning rf power, cleaning gas flow rate, and cleaning time, and a second post-cleaning parameter including post-cleaning rf power, cleaning gas flow rate, and cleaning time.
And before the second batch of wafers are etched, cleaning the etching chamber by adopting second pre-cleaning parameters, and in the process of etching the second batch of wafers, cleaning the etching chamber by adopting set second post-cleaning parameters every time five wafers are etched until the second batch of wafers are etched.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (10)
1. The etching chamber cleaning system is characterized by comprising a user operation unit, a wafer process acquisition unit and an etching chamber cleaning unit.
The wafer process acquisition unit is connected with the etching equipment and is used for collecting process parameters in the wafer etching process;
the user operation unit can set etching chamber cleaning parameters according to the data collected by the wafer process collection unit;
the etching chamber cleaning unit is connected with the etching equipment and used for controlling the etching equipment to execute a chamber etching cleaning process.
2. The etch chamber cleaning system of claim 1, wherein the etch chamber cleaning system is a waferless cleaning system.
3. A semiconductor etching apparatus comprising the etching chamber cleaning system according to any one of claims 1 to 2.
4. A method of cleaning an etch chamber, comprising:
starting an etching chamber cleaning system, and acquiring first process parameters of a first batch of wafer etching process by a wafer process acquisition unit;
the wafer process acquisition unit transmits the first process parameter to the user operation unit, and the user operation unit sets a first cleaning parameter of the cleaning system according to the first process parameter;
the user operation unit transmits the first cleaning parameters to the etching chamber cleaning unit, and the etching chamber cleaning unit controls the etching chamber to perform cleaning processing by adopting the first cleaning parameters;
and after the etching chamber finishes the cleaning treatment, carrying out etching process treatment on the first batch of wafers, and cleaning the etching chamber by adopting a first cleaning parameter every time N wafers are etched in the etching process until the first batch of wafers finish the etching process, and starting to carry out etching treatment on the second batch of wafers.
5. The method of claim 4, wherein after the first batch of wafers are etched and before the second batch of wafers begin the etching process, the method comprises:
the wafer process acquisition unit acquires a second process parameter of the second batch of wafer etching process, evaluates and compares the first process parameter and the second process parameter, and determines a cleaning parameter of the second batch of wafers according to the evaluation and comparison conditions of the first process parameter and the second process parameter.
6. The method of claim 4, wherein the first cleaning parameter is used to clean the etch chamber during the second wafer etch when the first process parameter and the second process parameter are the same.
7. The method of claim 4, wherein a second cleaning parameter of the cleaning system is set when the first process parameter and the second process parameter are different, and the second cleaning parameter is used to clean the etch chamber during the second batch of wafer etching processes.
8. The method of claim 4, wherein N is in the range of 1. Ltoreq. N.ltoreq.25.
9. The method of claim 4, wherein the method is adapted for one or more wafer lots for different etching processes.
10. The method of claim 4, wherein the first process parameter comprises an etching amount and an etching time during wafer etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110507244.9A CN115332034A (en) | 2021-05-10 | 2021-05-10 | Etching chamber cleaning system, cleaning method and semiconductor etching equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110507244.9A CN115332034A (en) | 2021-05-10 | 2021-05-10 | Etching chamber cleaning system, cleaning method and semiconductor etching equipment |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6124927A (en) * | 1999-05-19 | 2000-09-26 | Chartered Semiconductor Manufacturing Ltd. | Method to protect chamber wall from etching by endpoint plasma clean |
| US20030111337A1 (en) * | 2001-12-18 | 2003-06-19 | Chien-Chia Lin | Method and apparatus for monitoring sputter etch process |
| KR100896863B1 (en) * | 2007-12-11 | 2009-05-12 | 주식회사 동부하이텍 | Chamber dry cleaning apparatus for sti process and method thereof |
| CN102136410A (en) * | 2010-01-27 | 2011-07-27 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning technological cavities of semiconductor |
| CN108054115A (en) * | 2017-11-14 | 2018-05-18 | 上海华力微电子有限公司 | The polymeric cleaners method of etching cavity |
| CN109216241A (en) * | 2018-09-04 | 2019-01-15 | 上海华力微电子有限公司 | A kind of clean method of etch by-products intelligent self-cleaning |
-
2021
- 2021-05-10 CN CN202110507244.9A patent/CN115332034A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6124927A (en) * | 1999-05-19 | 2000-09-26 | Chartered Semiconductor Manufacturing Ltd. | Method to protect chamber wall from etching by endpoint plasma clean |
| US20030111337A1 (en) * | 2001-12-18 | 2003-06-19 | Chien-Chia Lin | Method and apparatus for monitoring sputter etch process |
| KR100896863B1 (en) * | 2007-12-11 | 2009-05-12 | 주식회사 동부하이텍 | Chamber dry cleaning apparatus for sti process and method thereof |
| CN102136410A (en) * | 2010-01-27 | 2011-07-27 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning technological cavities of semiconductor |
| CN108054115A (en) * | 2017-11-14 | 2018-05-18 | 上海华力微电子有限公司 | The polymeric cleaners method of etching cavity |
| CN109216241A (en) * | 2018-09-04 | 2019-01-15 | 上海华力微电子有限公司 | A kind of clean method of etch by-products intelligent self-cleaning |
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