CN115326865A - Detection system for thermoelectric film performance - Google Patents

Abstract

The application discloses detecting system of thermoelectric film performance, this application relates to thermoelectric film material testing technical field to solve the current problem that can't carry out voltage test and can't test the less thermoelectric film voltage of size to the thermoelectric film sample of preparation on insulating substrate, detecting system includes sample platform, sample platform is including having the insulating heat conduction base plate of pyroelectric property, insulating heat conduction base plate is used for placing the thermoelectric film sample. This application places the thermoelectric film sample through the insulating heat conduction base plate that adopts to have pyroelectric performance, when carrying out voltage test to the thermoelectric film sample, has the voltage that the thermoelectric film sample can be enlargied to the insulating heat conduction base plate that has pyroelectric performance to the realization carries out voltage test to the thermoelectric film sample on little and the insulating baffle base plate of size.

Description

Detection system for performance of thermoelectric film

Technical Field

The application relates to the technical field of thermoelectric thin film material testing, in particular to a thermoelectric thin film performance detection system.

Background

Thermoelectric materials rely on the thermoelectric effect, which mainly includes the seebeck effect, the peltier effect and the thomson effect, to realize the energy conversion of thermal energy into electrical energy. The seebeck effect is an important research direction, and can directly convert heat energy into electric energy, and specifically, the effect is that potential difference is generated between two ends of an object with temperature difference. In order to realize higher electro-thermal conversion, thermoelectric materials are required to have higher electrical conductivity, seebeck coefficient and lower thermal conductivity. Rapid development of economy has placed high performance demands on thermoelectric materials, and development of high performance thermoelectric has become a research hotspot. The traditional thermoelectric material development technology based on the technical route of preparation-test-improvement-preparation is long in time consumption, and the development and application of the novel thermoelectric material are limited. In recent years, high-throughput techniques for materials based on artificial intelligence and machine learning have accelerated the development of new materials. High throughput techniques include high throughput preparation and rapid characterization of properties of materials. The high-throughput preparation is the first step for realizing the development of new materials, and the precision of preparing samples is an important ring for realizing the development of the new materials; the prepared high-flux sample is a necessary means for screening out high-performance thermoelectric materials.

At present, the performance test of a thermoelectric film sample mainly depends on a commercial conductivity-Seebeck coefficient scanning probe, and the method has the following defects in practical application: the method can only test the voltage of the thermoelectric film sample prepared on the conductive substrate, but cannot test the voltage of the thermoelectric film sample prepared on the insulating substrate, and the method cannot test the thermoelectric film with smaller size.

Thus, there is a need for improvement and development of the prior art.

Disclosure of Invention

The technical problem that this application will be solved lies in, to the not enough of prior art, provides the detecting system of thermoelectric film performance to solve current unable thermoelectric film sample to preparation on insulating substrate and the unable problem of testing the thermoelectric film voltage that the size is less.

The sample stage comprises an insulating heat-conducting substrate with pyroelectric performance, the insulating heat-conducting substrate is used for placing a thermoelectric thin film sample, and when the thermoelectric thin film sample is subjected to voltage test, the insulating heat-conducting substrate with pyroelectric performance is used for amplifying the voltage of the thermoelectric thin film sample.

In one implementation, the detection system further comprises:

the heat source monitoring equipment is arranged on the sample table and is used for supplying a non-uniform temperature field of the thermoelectric thin film sample;

a data acquisition device for acquiring a voltage of a thermoelectric thin film sample;

the probe platform is provided with a plurality of probe placing parts;

one end of each probe is arranged on the probe placing part, and the other end of each probe is connected with data acquisition equipment.

In one implementation, a spring is disposed within the probe.

In one implementation mode, the detection system further comprises a displacement table, the sample table is arranged on the displacement table, and the displacement table drives the sample table to move horizontally.

In one implementation manner, a first temperature detection device is arranged on the sample stage and used for detecting the damage degree of the thermoelectric thin film sample.

In one implementation, the insulating and heat conducting substrate is one of barium titanate, lithium niobate, lithium tantalate, and lead titanate.

In one implementation, a heat source monitoring device includes:

the heating device is arranged on the sample table;

the second temperature detection device is arranged on the heating device;

the temperature control device is connected with the heating device.

In one implementation, when the heating device is a thermoelectric sheet, the temperature control device is a direct current power supply.

In one implementation, when the heating device is a laser, the temperature control device is a modulator.

In one implementation, the data acquisition device includes:

the data acquisition card is provided with a plurality of data acquisition channels, and the data acquisition channels are connected with the probes;

and the upper computer is connected with the data acquisition card and is used for collecting and analyzing data.

Has the advantages that: the thermoelectric film sample is placed on the insulating heat-conducting substrate with the pyroelectric performance, and when the voltage of the thermoelectric film sample is tested, the voltage of the thermoelectric film sample can be amplified by the insulating heat-conducting substrate with the pyroelectric performance, so that the voltage test of the thermoelectric film sample on the insulating guide plate substrate with small size is realized.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings may be obtained according to the drawings without any inventive work.

FIG. 1 is a schematic diagram of a system for detecting the performance of a thermoelectric film.

Fig. 2 is a schematic structural diagram of a thermoelectric thin film sample to be tested in a thermoelectric thin film performance detection system provided by the present application.

Fig. 3 is a schematic structural diagram of a thermoelectric thin film sample to be tested in a thermoelectric thin film performance testing system provided by the present application, which is placed on a sample stage.

Fig. 4 is a schematic diagram of material composition distribution of a thermoelectric thin film sample on a sample stage in a thermoelectric thin film performance detection system provided by the present application.

Fig. 5 is a schematic view of monitoring the operation of a second temperature detection device based on a heating device in the thermoelectric film performance detection system provided by the present application.

Fig. 6 is a voltage distribution diagram of a thermoelectric thin film sample at each position on a partial sample stage in a thermoelectric thin film performance testing system provided by the present application.

In the figure: 01. a thermoelectric thin film sample; 10. a sample stage; 101. a placement groove; 20. a probe; 30. a displacement table; 401. a heating device; 402. a second temperature detection device; 403. a temperature control device; 501. a data acquisition card; 502. and (4) an upper computer.

Detailed Description

The present application provides a system for detecting the performance of a thermoelectric film, which is described in detail below with reference to the accompanying drawings and examples, in order to make the objects, technical solutions and effects of the present application clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.

As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.

It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The following description of the embodiments is provided to further explain the present disclosure by way of example in connection with the appended drawings.

If the properties of the thermoelectric material are researched by using the plug Bei Kexiao, it should be known that the seebeck coefficient is an important coefficient for representing the properties of the thermoelectric material, and the seebeck coefficient is large, the properties of the thermoelectric material are good, and the seebeck effect is specifically represented by that a potential difference is generated between two ends of an object with a temperature difference, the seebeck coefficient is in direct proportion to electromotive force and in inverse proportion to the temperature difference, the performance test of the thermoelectric material at present mainly depends on a commercial conductivity-seebeck coefficient scanning probe, the tested thermoelectric material needs to have a certain thickness, so that the thermoelectric material has a certain temperature difference to generate a measurable potential difference, and the application cannot test the thermoelectric film with a smaller size.

As shown in fig. 1 to 3, the present embodiment provides a system for detecting the performance of a thermoelectric film, the system includes a sample stage 10, the sample stage 10 includes an insulating and heat-conducting substrate having pyroelectric performance, the sample stage 10 is provided with a placing groove 101, the thermoelectric film samples 01 are disposed on the placing groove 101 in a matrix arrangement manner, the present embodiment places the thermoelectric film samples 01 on the insulating and heat-conducting substrate having pyroelectric performance, and when performing a voltage test on the thermoelectric film samples 01, the insulating and heat-conducting substrate having pyroelectric performance can amplify the voltage of the thermoelectric film samples 01, thereby implementing the voltage test on the thermoelectric film samples 01 on the insulating and heat-conducting substrate with small size.

In an embodiment, the insulating and heat conducting substrate may be one of barium titanate, lithium niobate, lithium tantalate, and lead titanate according to different testing temperatures, but the embodiment is not limited to the above.

As shown in fig. 1, in an embodiment, the detection system further includes a heat source monitoring device and a data acquisition device, the heat source monitoring device is disposed on the sample stage 10, and the heat source monitoring device is configured to provide a non-uniform temperature field for the thermoelectric thin film sample 01, so that the thermoelectric thin film sample 01 on the sample stage 10 can generate a temperature difference to generate an electromotive force (voltage); the data acquisition device is used for acquiring voltage generated by thermoelectric thin film samples 01 due to temperature difference, compared with a traditional detection mode of a single probe 20, the data acquisition device is provided with a probe table and a plurality of probes 20, a plurality of probe 20 placing parts are arranged on the probe table, one end of each probe 20 is arranged on the probe 20 placing part (not shown in the figure), and the other end of each probe 20 is connected with the data acquisition device, namely, one probe table is arranged, the probe table can simultaneously accommodate a plurality of probes 20, correspondingly, the sample table 10 also accommodates a plurality of thermoelectric thin film samples 01, and the thermoelectric thin film samples 01 on the sample table 10 belong to different components, wherein the thermoelectric thin film samples 01 used in the embodiment are prepared by taking magnesium, bismuth and tin as main components and taking titanium, copper and the like as doping elements, and the thermoelectric thin film samples 01 with different components are prepared on a substrate by combining electron beam evaporation and a mask, as shown in fig. 4, when the data acquisition device is used, the probes 20 on the probe table 10 are simultaneously inserted into the thermoelectric thin film samples 01 corresponding to realize high-efficiency measurement, and the sample acquisition device has high efficiency of the sample acquisition and the sample acquisition device.

As shown in fig. 1, optionally, the number of probes 20 of the probe station may be equal to the number of thermoelectric thin film samples 01 of the sample station 10, and the number of probes 20 of the probe station may be smaller than the number of thermoelectric thin film samples 01 of the sample station 10, in order to improve the applicability between the sample station 10 and the probe station, in this embodiment, the number of probes 20 of the probe station may be smaller than the number of thermoelectric thin film samples 01 of the sample station 10, it is understood that the area of the probe station may be smaller than the area of the sample station 10, then, in this case, the distance between probes 20 of the probe station may be equal to the distance between thermoelectric thin film samples 01 of the sample station 10, the distance between probes 20 of the probe station may also not be equal to the distance between thermoelectric thin film samples 01 of the sample station 10, when the distance between probes 20 of the probe station is not equal to the distance between thermoelectric thin film samples 01 of the sample station 10, the distance between probes 20 of the probe station may be set to be adjustable, so as to be adaptable to not only to the current tested probe station 10, but also to be adaptable to the distance between other sample stations 10, thereby increasing the applicable range of the probe stations by 1 mm, where the probe station is 1-5mm; the diameter of the probe 20 is 0.2-2mm; the length of the probe 20 is 15-20mm; the tip of the probe 20 is round or square.

As shown in fig. 1, in an embodiment, when the number of probes 20 of a probe station is less than the number of thermoelectric thin film samples 01 of a sample station 10, that is, the area of the probe station is less than the area of the sample station 10, the detection system further includes a displacement station 30, the displacement station 30 is disposed on a test station, the sample station 10 is disposed on the displacement station 30, the displacement station 30 can drive the sample station 10 to move horizontally, and the probe station can move vertically, so that after the data acquisition device acquires and analyzes the voltage of a part of the thermoelectric thin film samples 01 of the sample station 10 through the probes 20 of the probe station, the sample station 10 can move up the probe station first, and then the sample station 10 moves horizontally to the position of the untested thermoelectric thin film samples 01 on the sample station 10 corresponding to the probe station under the driving of the displacement station 30, and the probe station moves down to enable the probes 20 on the probe station to be inserted into the corresponding thermoelectric thin film samples 01, so as to continue to test the thermoelectric thin film samples 01, the displacement station 30 can be driven to move horizontally, and other functions are not described in detail.

Further, a spring (not shown) is disposed in the probe 20, and the magnitude of the contact force between the probe 20 and the pyroelectric thin film sample 01 can be adjusted by the arrangement of the spring.

In one embodiment, a first temperature detection device (not shown) is disposed on the sample stage 10, and is configured to detect a damage degree of the thermoelectric thin film sample 01, when the first temperature detection device detects that a temperature difference of the thermoelectric thin film sample 01 on the sample stage 10 is too large, the thermoelectric thin film sample 01 is determined to be a damaged sample, and a part of the damaged sample can be inspected by the first temperature detection device, so as to reduce the measurement and calculation of useless data, wherein the first temperature detection device is an infrared camera.

As shown in fig. 1, in an embodiment, the heat source monitoring apparatus includes a heating device 401, a second temperature detecting device 402, and a temperature control device 403, where the heating device 401 is disposed on a displacement table 30, it is understood that the heating device 401 is disposed on the sample table 10 through the displacement table 30, the second temperature detecting device 402 is disposed on the heating device 401, and the temperature control device 403 is connected to the heating device 401 and controls heating of the heating device 401; in the present embodiment, different heating devices 401 and temperature control devices 403 are selected according to the size and the testing frequency of the thermoelectric thin film sample 01 during specific use, and the thermoelectric thin film sample 01 with a low temperature change frequency during testing is heated by using the thermoelectric sheet; for the thermoelectric thin film sample 01 with higher temperature change frequency during testing, laser is used for heating, and the frequency of the laser includes, but is not limited to 808nm,915nm and 940nm; when the thermoelectric piece is used for heating, the direct-current power supply is adopted for controlling, and the temperature of the thermoelectric piece is changed by changing the output current of the direct-current power supply; when the laser is used for heating, the modulator is used for controlling, the output power of the laser is changed through the modulator to control the temperature, and the thermocouple is used for monitoring the temperature field of the thermoelectric thin film sample 01; as shown in fig. 5, a heating curve formed when the probes 20 of the probe station are inserted into the thermoelectric thin film samples 01 on the sample station 10, respectively, and then the thermoelectric thin film samples 01 on the sample station 10 are heated in the form of evenly spaced time periods using the heating device 401 is illustrated.

As shown in fig. 1, in one embodiment, the data acquisition device includes a data acquisition card 501 and an upper computer 502, the data acquisition card 501 has a plurality of data acquisition channels, and the data acquisition channels are connected to the probe 20; the upper computer 502 is connected with the data acquisition card 501, the upper computer 502 can be a control terminal such as a computer, the upper computer 502 is provided with data acquisition software, and when the data acquisition software acquires the voltage of each thermoelectric thin film sample 01 under the action of the data acquisition card 501 cooperating with the probe 20, the voltage is uploaded to the upper computer 502 for data collection and analysis, as shown in fig. 6, the voltage data diagram is a voltage data diagram of the thermoelectric thin film sample 01 at each position on the sample platform 10, wherein the voltage data diagram is marked with different voltages in different colors; the data acquisition card 501 may be, but is not limited to, an NI USB-6211 data acquisition card 501779676-01, etc.

In one embodiment, a sample fixing clamp (not shown) is disposed on the sample stage 10, and the sample fixing clamp is used for fixing the thermoelectric thin film sample 01 to prevent the thermoelectric thin film sample 01 from being shifted when the probe 20 is inserted into the corresponding thermoelectric thin film sample 01 during the test process of the thermoelectric thin film sample 01.

The detection process of the detection system for the performance of the thermoelectric film comprises the following steps: during testing, the thermoelectric thin film sample 01 is placed in the placing groove 101 of the sample table 10, the thermoelectric thin film sample 01 is fixed by the sample fixing clamp, the probes 20 on the probe table are in contact with the corresponding thermoelectric thin film sample 01, then the heat source monitoring equipment is controlled to provide different testing temperatures for the thermoelectric thin film sample 01, a periodic temperature field is provided, and the data acquisition equipment is used for collecting voltage values of the thermoelectric thin film sample 01 with different components on the sample table 10.

In summary, the present embodiment provides a detection system for performance of a thermoelectric thin film, the detection system includes a sample stage 10, the sample stage 10 includes an insulating and heat-conducting substrate having pyroelectric performance, the sample stage 10 is provided with a placing groove 101, thermoelectric thin film samples 01 are disposed on the placing groove 101 in a matrix arrangement manner, in the present embodiment, the thermoelectric thin film samples 01 are placed on the insulating and heat-conducting substrate having pyroelectric performance, and when a voltage test is performed on the thermoelectric thin film samples 01, the insulating and heat-conducting substrate having pyroelectric performance can amplify the voltage of the thermoelectric thin film samples 01, so as to implement the voltage test on the thermoelectric thin film samples 01 on the insulating guide substrate with small size.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.

Claims (10)

1. A system for detecting the performance of a thermoelectric film, the system comprising:

the sample stage comprises an insulating heat-conducting substrate with pyroelectric performance, the insulating heat-conducting substrate is used for placing a thermoelectric thin film sample, and when the thermoelectric thin film sample is subjected to voltage test, the insulating heat-conducting substrate with pyroelectric performance is used for amplifying the voltage of the thermoelectric thin film sample.

2. The system for sensing the performance of a thermoelectric film of claim 1, further comprising:

the heat source monitoring equipment is arranged on the sample table and is used for supplying a non-uniform temperature field of the thermoelectric thin film sample;

a data acquisition device for acquiring a voltage of a thermoelectric thin film sample;

the probe platform is provided with a plurality of probe placing parts;

one end of each probe is arranged on the probe placing part, and the other end of each probe is connected with data acquisition equipment.

3. The system of claim 2, wherein a spring is disposed within the probe.

4. The system for inspecting thermoelectric film properties of claim 1, further comprising a displacement stage, wherein said sample stage is disposed on said displacement stage, and wherein said displacement stage moves said sample stage horizontally.

5. The system for detecting the performance of the thermoelectric film as claimed in claim 1, wherein a first temperature detecting device is disposed on the sample stage, and the first temperature detecting device is used for detecting the damage degree of the thermoelectric film sample.

6. The system of claim 1, wherein the insulating and thermally conductive substrate is one of barium titanate, lithium niobate, lithium tantalate, and lead titanate.

7. A system for testing the performance of a thermoelectric film according to claim 2, wherein the heat source monitoring device comprises:

the heating device is arranged on the sample table;

the second temperature detection device is arranged on the heating device;

the temperature control device is connected with the heating device.

8. The system of claim 7, wherein the temperature control device is a DC power source when the heating device is a thermoelectric chip.

9. The system of claim 7, wherein the temperature control device is a modulator when the heating device is a laser.

10. The system for sensing the performance of a thermoelectric thin film as recited in claim 2, wherein said data acquisition device comprises:

the data acquisition card is provided with a plurality of data acquisition channels, and the data acquisition channels are connected with the probes;

and the upper computer is connected with the data acquisition card and is used for collecting and analyzing data.

Images