CN1153260C - Method for forming net-structure photoresist layer - Google Patents
Method for forming net-structure photoresist layer Download PDFInfo
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- CN1153260C CN1153260C CNB011189428A CN01118942A CN1153260C CN 1153260 C CN1153260 C CN 1153260C CN B011189428 A CNB011189428 A CN B011189428A CN 01118942 A CN01118942 A CN 01118942A CN 1153260 C CN1153260 C CN 1153260C
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- photoresist layer
- light source
- ultraviolet light
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Abstract
The present invention relates to a method for forming net-shaped structure photoresist layers, which comprises the following steps: a photoresist layer is provided; the photoresist layer is irradiated by a light source and placed in the steam of a cross linking agent. The present invention is a method forming a net-shaped structure of a chemical multiplier type photoresist layer.
Description
Technical field
The relevant a kind of photoetching making technology of the present invention, specifically, relevant a kind of photoetching making technology that is applied in the semiconductor device fabrication.
Background technology
In the manufacture craft of semiconductor subassembly, along with size of components is more and more littler, photoetching (photolithography) manufacture craft shows important semiconductor subassembly day to successfully making.Photoetching making technology is shown in Fig. 1 (a) and 1 (b), deep UV (deep ultra violetray with wavelength 248 microns (nm), DUV) light source 4, process light shield 3 shines the positive photoresist layer 2 on the substrate 1, make pattern on the light shield 3 via light source 4 exposures (exposure), transfer on the photoresist layer 2, subsequently, baking photoresist layer 2 makes the part that shines light source diffuse to form the etching window.Through (development) step of developing, on photoresist layer, produce pattern again.
Now, along with the mask pattern live width is more and more littler, accuracy to design transfer must be more and more higher, there are many modes to be used to improve the resolution of design transfer, comprise that the light source that uses shorter wavelength comes pattern exposure, calibrating optical closing effect (optical proximity effect), uses the phase-shift type light shield, uses off-axis formula lighting technology, forms anti-reflecting layer, uses than the photoresist layer of minimal thickness etc.
In these methods, use is a kind of convenience and effective method than the photoresist layer of minimal thickness, because the thickness of photoresistance is thin more, resolution is good more, because thin photoresist layer, at certain depth of focus (depthof focus, DOF) under, the tolerance of higher vibrations or skew is arranged, can make all photoresist layers with respect to thicker photoresist layer, no matter be auspicious, identical focusing (focus) can both be arranged near the surface or the end.
Yet, the thickness of photoresist layer can not be too thin, because too thin thickness can not have enough etch-resistance (etch resistance), make the photoresist layer of patterning when subsequent etch or attachment steps, be easy to have influence on down the formation of laminar substrate figure, so the thickness of photoresist layer can not infinitely reduce, must be able to resist etching subsequently and adhere to the minimum thickness requirement of manufacture craft.
But,, then cause the resist layer opposing and adhere to subsequently with etched ability and must be enhanced than glimmer if must use thinner photoresist layer.Usually, prior art can be used hard baking manufacture craft (hard bakeprocess), by the adhesive force that reduces residual solvent levels, increase and substrate in the photoresistance, its anti-etching power is strengthened.Yet, toast the intrinsic propesties (intrinsicproperty) that manufacture craft can not change photoresist layer firmly, promptly can not change the chemical constitution of photoresist layer, therefore limited to the improvement degree of anti-etching power of photoresist layer and anti-adhesive force.
Summary of the invention
The purpose of this invention is to provide a kind of method that forms the network structure photoresist layer, make semiconductor subassembly use thin photoresist layer when satisfying the design transfer effect of its well focussed, still can possess good anti-etching ability, avoid the photoresist layer of patterning to destroy because of adhering in the follow-up manufacture craft with etching.
Method of the present invention at first provides a photoresist layer; Then, with the described photoresist layer of a light source irradiation, make described photoresist layer exposure; At last, the photoresist of described irradiation is placed in the steam of a crosslinking agent (crosslinking agent), makes it to form a cancellated photoresist layer.
According to above-mentioned conception, the described photoresist layer that is wherein provided is to be the photoresist layer of patterning, particularly the photoresist layer that strengthens of the chemistry of patterning.
According to above-mentioned conception, wherein said light source is that (particularly, wavelength is the ultraviolet light source for 365nm for ultra violet ray, UV) light source for a ultraviolet ray.
Method of the present invention also is included in the step with the described photoresist layer of baking behind the described photoresist layer of a light source irradiation.
According to above-mentioned conception, crosslinking agent of the present invention is more satisfactory be the bis-epoxy butadiene (butadienediepoxy, BTDE); The formation temperature of described cancellated photoresist layer is between 80 ℃ to 120 ℃, is preferably 100 ℃, and the time is between 10 seconds to 30 minutes; And described temperature can be provided by a heating plate.
Form the method for network structure photoresist layer by this, this cancellated photoresist layer has preferable anti-etching and anti-adhesive ability, and the thickness of photoresist layer can be reduced to promote accuracy, the resolution of design transfer in the photoetching making technology.
Be clearer understanding purpose of the present invention, characteristics and advantage, the present invention is described in detail below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 (a) and 1 (b) are the schematic diagram of existing little shadow photoresist layer step; Wherein 1 (a) is the schematic diagram of the positive photoresist layer that exposes with the deep UV light source of wavelength 248 microns (nm); 1 (b) is the schematic diagram of photoresist layer after development step with Fig. 1 (b); And
Fig. 2 (a) and 2 (b) form the schematic diagram of the method for network structure photoresist layer for the present invention; 2 (a) are to be the schematic diagram of the photoresist layer that strengthens of the chemistry of the ultraviolet light source irradiation patternization of 365 microns (nm) with wavelength; 2 (b) are the method according to this invention, after 100 ℃ of bakings, form the schematic diagram of the photoresist layer of network structure chemistry enhancing in the surface.
Embodiment
Each assembly that is comprised in the icon of the present invention lists as follows:
1 substrate, 4 deep ultraviolet linear lights
2 photoresistances
3 light shields
Because thin photoresist layer can't have good anti-etching power and anti-adhesive force in follow-up manufacture craft, the invention provides a kind of method of formation netted (crosslinking) structure photoresist layer, make the photoresist layer surface energy form network molecular structure, make photoresist layer to the etching in the follow-up manufacture craft with adhere to, have good resistance, be not destroyed to guarantee photoresist layer.
The formation method of netted photoresist layer is shown in Fig. 2 (a) and 2 (b).Among Fig. 2 (a), one the photoresist layer 2 of patterning be exposed to a ultraviolet light source 4 times, make it activation, described photoresist layer 2 is generally the photoresist layer (chemically amplified resist) that chemistry strengthens.Light source requirements when the wavelength of described ultraviolet light source needn't picture pattern is so short, and the deep UV light source wavelength that uses during patterning is generally 248nm, and the wavelength of the ultraviolet light source of this moment only needs denominator to get final product, for example 365nm.Subsequently, photoresist layer 2 is placed in a crosslinking agent (crosslinking agent) steam atmosphere, bis-epoxy butadiene (butadiene diepoxy particularly, BTDE), and calorify between 80 ℃ to 120 ℃ with heating plate, the preferably is 100 ℃, the time is between 10 seconds to 30 minutes, make in photoresist layer 2 surfaces and formed cancellated photoresist layer, shown in Fig. 2 (b).
For instance, photoresist layer 2 its structural formulas of general used chemistry enhancing are
When it is exposed to ultraviolet light and through after curing, can on the photoresistance that chemistry strengthens, produce hydroxyl (hydroxy group ,-OH-) structure; Subsequently, under 100 ℃ of heating plate heating, steamed in the crosslinking agent steam of BTDE, through about 10 seconds to 30 minutes, the photoresist laminar surface that chemistry is strengthened formed the three-dimensional space network structure.
The photoresist layer that the chemistry of this sclerosis strengthens has preferable opposing etching and the ability of adhering to, form the method for network structure photoresist layer by this, the thickness of photoresist layer can be reduced to promote accuracy, the resolution of design transfer in the photoetching making technology.
Claims (17)
1. method that forms the network structure photoresist layer is characterized in that it comprises:
One photoresist layer is provided;
Shine described photoresist layer with a ultraviolet light source; And
The photoresist of described irradiation is placed in the steam of a crosslinking agent bis-epoxy butadiene, makes to form a cancellated photoresist layer.
2. the method for claim 1 is characterized in that, the described photoresist layer that is provided is the photoresist layer of patterning.
3. the method for claim 1 is characterized in that, the photoresist layer that the described photoresist layer that is provided strengthens for chemistry.
4. the method for claim 1 is characterized in that, the wavelength of described ultraviolet light source is 365nm.
5. the method for claim 1 is characterized in that, after shining described photoresist layer with a ultraviolet light source, described method also is included as the step of the described photoresist layer of baking.
6. the method for claim 1 is characterized in that, the formation temperature of described cancellated photoresist layer is between 80 ℃ to 120 ℃.
7. method as claimed in claim 6 is characterized in that, described formation temperature is 100 ℃.
8. method as claimed in claim 6, described temperature are provided by a heating plate.
9. method that forms the network structure photoresist layer is characterized in that it may further comprise the steps:
One substrate is provided;
Form a photoresist layer on described substrate;
The described photoresist layer of patterning;
Shine described photoresist layer with a deep ultraviolet light source; And
The photoresist of described irradiation is placed in the steam of a crosslinking agent bis-epoxy butadiene, makes to form described cancellated photoresist layer.
10. method as claimed in claim 9 is characterized in that, the photoresist layer that the described photoresist layer that is provided strengthens for chemistry.
11. method as claimed in claim 9 is characterized in that, the wavelength of described ultraviolet light source is 365nm.
12. method as claimed in claim 9 is characterized in that, described method also is included in the step with the described photoresist layer of baking behind the described photoresist layer of a light source irradiation.
13. method as claimed in claim 9 is characterized in that, the formation temperature of described cancellated photoresist layer is between 80 ℃ to 120 ℃.
14. method as claimed in claim 13 is characterized in that, described formation temperature is 100 ℃.
15. method as claimed in claim 13 is characterized in that, described temperature is provided by a heating plate.
16. method as claimed in claim 9 is characterized in that, the step of described little shadow photoresist layer also comprises:
Form a light shield on described photoresist layer, described photoresist layer has a pattern;
Shine described light shield with a deep UV light source, the part exposure that photoresist layer is not covered by light free hand drawing case;
Toast described photoresist layer; And
The described photoresist layer of etching makes described photoresist layer patterning.
17. method as claimed in claim 16 is characterized in that, the wavelength of described deep UV light source is 248nm.
Photoresist layer photoresist layer photoresist layer photoresist layer photoresist layer photoresist layer
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011189428A CN1153260C (en) | 2001-05-16 | 2001-05-16 | Method for forming net-structure photoresist layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011189428A CN1153260C (en) | 2001-05-16 | 2001-05-16 | Method for forming net-structure photoresist layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1385878A CN1385878A (en) | 2002-12-18 |
| CN1153260C true CN1153260C (en) | 2004-06-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011189428A Expired - Lifetime CN1153260C (en) | 2001-05-16 | 2001-05-16 | Method for forming net-structure photoresist layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1153260C (en) |
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2001
- 2001-05-16 CN CNB011189428A patent/CN1153260C/en not_active Expired - Lifetime
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| Publication number | Publication date |
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| CN1385878A (en) | 2002-12-18 |
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Granted publication date: 20040609 |