CN115323489A - Doping method and doping device for heavily doped silicon single crystal - Google Patents
Doping method and doping device for heavily doped silicon single crystal Download PDFInfo
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- CN115323489A CN115323489A CN202211011811.2A CN202211011811A CN115323489A CN 115323489 A CN115323489 A CN 115323489A CN 202211011811 A CN202211011811 A CN 202211011811A CN 115323489 A CN115323489 A CN 115323489A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 239000013078 crystal Substances 0.000 title claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 65
- 239000010703 silicon Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 88
- 239000010453 quartz Substances 0.000 claims abstract description 82
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 28
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 28
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000011574 phosphorus Substances 0.000 claims abstract description 25
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 230000000295 complement effect Effects 0.000 claims description 13
- 230000003044 adaptive effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 63
- 239000007789 gas Substances 0.000 description 36
- 239000000243 solution Substances 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 14
- 239000002356 single layer Substances 0.000 description 9
- 230000001502 supplementing effect Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000005086 pumping Methods 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a doping method and a doping device for a heavily doped silicon single crystal, which relate to the technical field of production of the heavily doped silicon single crystal and comprise a quartz bell jar, wherein the quartz bell jar comprises an inner-layer bell jar, a middle-layer bell jar and an outer-layer bell jar, the middle-layer bell jar is provided with a plurality of bell jars, the heights of the inner-layer bell jar, the middle-layer bell jar and the outer-layer bell jar are sequentially reduced, the inner-layer bell jar, the middle-layer bell jar and the outer-layer bell jar are coaxial, the bottom walls of the inner-layer bell jar, the middle-layer bell jar and the outer-layer bell jar are positioned on the same horizontal plane, the middle-layer bell jar is sleeved outside the inner-layer bell jar, the outer-layer bell jar is sleeved outside the middle-layer bell jar, the bottom ring wall of the inner-layer bell jar is uniformly provided with a plurality of first guide holes, and the bottom ring wall of the middle-layer bell jar is uniformly provided with a plurality of second guide holes; under the influence of a high-temperature thermal field and vacuum of the silicon solution above 1000 ℃, the multi-layer adaptive bell jar, the first guide hole and the second guide hole are arranged to increase the volatilization walking path of the arsenic gas or the phosphorus gas and prolong the doping time.
Description
Technical Field
The invention belongs to the technical field of production of heavily doped silicon single crystals, and particularly relates to a doping method and a doping device for the heavily doped silicon single crystals.
Background
With the advent of the extremely large scale integrated circuit era, CMOS technology has become a popular technology in the IC industry due to its well-known low power consumption and excellent noise margin, but as the integration degree increases and the device channel width is reduced, the Latch-up (Latch-up) effect caused by pnp transistors inherent in CMOS structures becomes more severe, and in addition, soft failures caused by alpha-particle radiation after scaling of circuits may cause serious logic errors in the circuits.
The heavily doped single crystal can overcome the parasitic effects such As latch-up effect and alpha particle soft failure inherent in the device structure, so that the heavily doped single crystal can be widely used As a substrate material of a silicon epitaxial wafer, and the market demand of the heavily doped silicon single crystal wafer with the resistivity of phosphorus (ph) below 0.001 and arsenic (As) below 0.002 is continuously increased along with the continuous expansion of the application fields and the ranges of integrated circuits and power devices. The concentration of the dopant in the crystal is limited by its solubility in the crystal, and the solid solutions of the N-type dopant in the silicon single crystal are 13X 10, respectively 21 atoms/cm 3 (phosphorus) 1.7X 10 21 atoms/cm 3 (arsenic). The concentration of the doping agent in the crystal is limited by other conditions in the seeding process besides the doping degree. Therefore, the crystal growth is very difficult when the concentration approaches the limit value, the original bell jar gas phase doping is used for the single crystal, the original bell jar doping efficiency is low, and the single crystal yield of arsenic with the resistivity of about 0.002 and phosphorus with the resistivity of about 0.001 of the drawn crystal bar is low.
In the prior art, for example, the chinese invention with application number 201811605948.4 specifically discloses a doping apparatus for heavily doping czochralski single crystals, in which the side wall of a quartz bell jar in the doping apparatus is composed of a plurality of quartz walls, a plurality of holes are respectively formed on the quartz walls located at the inner side of the outer wall, and the holes on two adjacent layers of quartz walls are distributed in a mutually staggered manner. Wherein, the arrangement mode of the plurality of layers of quartz walls is as follows: the starting point of the top part descends layer by layer from inside to outside. The quartz wall inside the outer wall is preferably two layers. According to the doping device, the structure of the quartz bell jar is improved, so that the thermal motion mode of doping gas molecules is changed, and the doping gas molecules can exist in the quartz bell jar for a longer time; however, since the resistivity of the doped ingot is still 0.003 Ω · cm or more, the resistivity is still high, and it is not satisfactory to draw an arsenic single crystal having a resistivity of about 0.002 and a phosphorus single crystal having a resistivity of about 0.001.
Disclosure of Invention
Accordingly, the present invention provides a doping apparatus for heavily doping a silicon single crystal, which reduces the resistivity of the ingot.
It is also necessary to provide a doping method for heavily doping a silicon single crystal.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a doping device for heavily doped silicon single crystals comprises a quartz bell jar, wherein the quartz bell jar comprises an inner bell jar, a middle bell jar and an outer bell jar, the middle bell jar is provided with a plurality of middle bell jars, the heights of the inner bell jar, the middle bell jar and the outer bell jar are sequentially reduced, the inner bell jar, the middle bell jar and the outer bell jar are coaxial, the bottom walls of the inner bell jar, the middle bell jar and the outer bell jar are positioned on the same horizontal plane, the middle bell jar is sleeved outside the inner bell jar, the outer bell jar is sleeved outside the middle bell jar, a plurality of first guide holes are uniformly formed in the bottom ring wall of the inner bell jar, and a plurality of second guide holes are uniformly formed in the bottom ring wall of the middle bell jar.
Preferably, the first guide holes and the second guide holes are arranged in a staggered manner.
Preferably, the height of the first guide hole is 8-12cm from the bottom wall.
Preferably, the height of the second guide hole is 4-8cm from the bottom wall.
Preferably, the doping device for heavily doping silicon single crystals further comprises a quartz crucible, wherein the quartz crucible is filled with a silicon solution, the quartz crucible is coaxial with the quartz bell jar, and the distance from the bottom wall of the quartz bell jar to the silicon solution is 10-30mm.
Preferably, the doping device for heavily doping silicon single crystal further comprises a quartz cup, the quartz cup is coaxial with the inner-layer bell jar, and the quartz cup is connected with the top of the inner-layer bell jar.
A doping method for heavily doped silicon single crystal uses the doping device for heavily doped silicon single crystal to carry out the complementary doping, and comprises the following specific steps:
s1: filling the doping elements into a quartz cup, placing the quartz cup into an inner-layer bell jar, adjusting the furnace pressure to a preset furnace pressure, and introducing a preset argon flow;
s2: lowering the quartz bell jar to a position of 10-30mm of the silicon solution, and performing complementary doping;
s3: and after the complementary doping element is volatilized, taking out the quartz bell jar, and finishing the complementary doping.
Preferably, the doping element is arsenic or phosphorus.
Preferably, the predetermined furnace pressure is greater than twice the furnace pressure before the back-doping.
Preferably, the predetermined argon flow is 50-100slm.
Compared with the prior art, the invention has the beneficial effects that:
the invention arranges an inner layer bell jar, a middle layer bell jar, an outer layer bell jar, and a plurality of first guide holes uniformly arranged on the bottom ring wall of the inner layer bell jar, a plurality of second guide holes uniformly arranged on the bottom ring wall of the middle layer bell jar, under the influence of a high-temperature thermal field above 1000 ℃ and vacuum of silicon solution, the doped phosphorus or arsenic is vaporized and enters the inner layer bell jar from a quartz cup, after a certain concentration is accumulated in the inner layer bell jar, arsenic gas or phosphorus gas enters the middle layer bell jar from the bottom wall of the inner layer bell jar under the guide of the first guide holes, after a certain concentration is accumulated in the middle layer bell jar, the arsenic gas or phosphorus gas enters the outer layer bell jar from the bottom wall of the middle layer bell jar under the guide of the first guide holes, the volatilization walking path of the arsenic gas or phosphorus gas is increased through the arrangement of a plurality of layers of adaptive bell jars, the first guide holes and the second guide holes, the doping time is prolonged, and the doping efficiency of the arsenic gas or phosphorus gas enters the middle layer bell jar and the quartz jar, the silicon solution is further uniformly guided in the quartz jar, the doping efficiency of the quartz jar is increased, and the silicon solution is further, the silicon solution is uniformly distributed in the quartz jar.
Compared with the prior art patents mentioned in the background art, the holes are formed on the quartz walls on the inner side of the outer wall, and the holes on the quartz walls on the two adjacent layers are distributed in a staggered manner, in the process of thermal movement of gas molecules, the frequency of mutual collision of molecules is greatly increased compared with the frequency of a single-layer bell jar, and the molecular kinetic energy is weakened by multiple times of collision of the molecules with the wall, so the mean free energy of the molecules is reduced, the mean free path of the molecules is shortened, although the gas molecules of arsenic exist in the bell jar for a longer time, the time for the arsenic gas to pass from the inner-layer bell jar to the outer-layer bell jar is only delayed, the arsenic gas is not guided to be fused into the silicon solution, and the doping efficiency is not high.
Drawings
FIG. 1 is a schematic diagram of a quartz bell jar.
Fig. 2 is a cross-sectional view of a quartz bell jar.
Fig. 3 is a cross-sectional view of a doping apparatus for heavily doping a silicon single crystal.
FIG. 4 is a graph comparing the resistivity at different locations in example one and comparative examples one and two.
FIG. 5 is a graph comparing the average resistivity of the first example and the second example.
FIG. 6 is a graph comparing the resistivity at different positions in example two, comparative example three, and comparative example four.
In the figure: the doping device 10 for heavily doping silicon single crystal, a quartz bell jar 100, an inner layer bell jar 110, a first guide hole 111, an intermediate layer bell jar 120, a second guide hole 121, an outer layer bell jar 130, a quartz crucible 200 and a quartz cup 300.
Detailed Description
The technical solutions and effects of the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings of the present invention.
Referring to fig. 1 to 3, a doping apparatus 10 for heavily doping a silicon single crystal includes a quartz bell jar 100, the quartz bell jar 100 includes an inner bell jar 110, a middle bell jar 120, and an outer bell jar 130, the middle bell jar 120 is plural, heights of the inner bell jar 110, the middle bell jar 120, and the outer bell jar 130 are sequentially reduced, the inner bell jar 110, the middle bell jar 120, and the outer bell jar 130 are coaxial, bottom walls of the inner bell jar 110, the middle bell jar 120, and the outer bell jar 130 are located on a same horizontal plane, the middle bell jar 120 is sleeved outside the inner bell jar 110, the outer bell jar 130 is sleeved outside the middle bell jar 120, a bottom ring wall of the inner bell jar 110 is uniformly provided with a plurality of first guide holes 111, and a bottom ring wall of the middle bell jar 120 is uniformly provided with a plurality of second guide holes 121.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the inner layer bell jar 110, the middle layer bell jar 120 and the outer layer bell jar 130 are arranged, the plurality of first guide holes 111 are uniformly arranged on the bottom ring wall of the inner layer bell jar 110, the plurality of second guide holes 121 are uniformly arranged on the bottom ring wall of the middle layer bell jar 120, the doped phosphorus or arsenic enters the inner layer bell jar 110 from the quartz cup 300 after being vaporized under the influence of a high-temperature thermal field and vacuum of a silicon solution above 1000 ℃, the arsenic gas or phosphorus gas enters the middle layer bell jar 120 from the bottom wall of the inner layer bell jar 110 under the guide of the first guide holes 111 after being concentrated in the inner layer bell jar 110 to a certain concentration, the arsenic gas or phosphorus gas enters the outer layer bell jar 130 from the bottom wall of the middle layer bell jar 120 under the guide of the second guide holes after being concentrated in the middle layer bell jar 120 to a certain concentration, the volatilization path of the arsenic gas or phosphorus gas is increased through the arrangement of the plurality of the first guide holes 111 and the second guide holes 121, the arrangement of the first guide holes 111 and the second guide holes 121 of the middle layer bell jar and the middle layer bell jar is adopted, so that the arsenic gas or phosphorus gas enters the bottom wall of the middle layer bell jar 100 and the bottom wall of the quartz jar 100, the quartz gas, the doping of the quartz jar 110, the quartz gas or the doping of the quartz glass is uniformly distributed in the quartz glass, the silicon solution, the quartz glass 100, the silicon solution is uniformly distributed in the quartz glass 100, and the silicon solution is obviously improved in the uniform doping efficiency of the quartz glass is improved, and the quartz glass.
Compared with the prior art patents mentioned in the background art, in the process of thermal movement of gas molecules in the patent, the frequency of mutual collision of molecules is greatly increased compared with the frequency of a single-layer bell jar, and the molecular kinetic energy is weakened by multiple times of collision of molecules with the wall, so that the mean free path of the molecules is shortened, although the gas molecules of arsenic exist in the bell jar for a longer time, the time for the arsenic gas to pass from the inner bell jar 110 to the outer bell jar 130 is only delayed, the arsenic gas is not guided to be fused into the silicon solution, and the doping efficiency is not high.
Further, the first guide holes 111 and the second guide holes 121 are arranged alternately, and block the gas from flowing directly from the inner bell jar 110 to the outer bell jar 130, so that the gas enters the middle bell jar 120 along the first guide holes 111, and then passes through the second guide holes 121 from the middle bell jar 120 to enter the outer bell jar 130.
Further, the height of the first guiding hole 111 is 8-12cm from the bottom wall to guide the gas to flow layer by layer.
Further, the height of the second guiding hole 121 is 4-8cm from the bottom wall.
Further, the doping device for heavily doping silicon single crystal further comprises a quartz crucible 200, the quartz crucible 200 is filled with a silicon solution, the quartz crucible 200 is coaxial with the quartz bell jar 100, and the distance between the bottom wall of the quartz bell jar 100 and the silicon solution is 10-30mm, so that gas can enter the silicon solution to be doped while flowing layer by layer.
Further, the doping device for heavily doping silicon single crystal further comprises a quartz cup 300, wherein the quartz cup 300 is coaxial with the inner-layer bell jar 110, and the quartz cup 300 is connected with the top of the inner-layer bell jar 110.
A doping method for heavily doped silicon single crystal uses the doping device for heavily doped silicon single crystal to carry out the complementary doping, and comprises the following specific steps:
s1: filling the doping elements into the quartz cup 300, placing the quartz cup 300 into the inner-layer bell jar 110, adjusting the furnace pressure to a preset furnace pressure, and introducing a preset argon flow;
s2: lowering the quartz bell jar 100 to a position 10-30mm away from the silicon solution, and performing complementary doping;
s3: and after the complementary doping element is volatilized, taking out the quartz bell jar 100, and finishing the complementary doping.
According to the invention, the improved multi-layer quartz bell jar 100 is matched with the furnace pressure and the argon flow during doping, so that the thermal movement flow mode of the doping gas molecules is changed, the doping gas molecules can exist in the quartz bell jar 100 for a longer time, the doping gas molecules can be dissolved into the silicon material more favorably under the same doping time and condition, and the doping efficiency can be obviously improved.
Further, the doping element is arsenic or phosphorus.
Further, the predetermined furnace pressure is more than twice the furnace pressure before the doping.
Further, the predetermined argon flow rate is 50 to 100slm.
For ease of understanding, the present invention is further illustrated by the following first, second, third, and fourth examples:
1. the phosphorus-doped examples and comparative examples are as follows:
example one (multilayer bell jar of the invention with pilot hole):
when a 5-inch single crystal rod is pulled in a 1806 furnace by adopting a Czochralski single crystal pulling mode, the size of a thermal field is 18 inches, the feeding amount is 50kg, the phosphorus doping amount is 200g, the constant-diameter furnace pressure is 5pa, the doping supplementing furnace pressure is 10pa, and the argon flow is 60slm, then the steps of melting, seeding and shouldering are carried out to enter the constant-diameter stage, during doping, the vacuum pumping is carried out, the distance between a quartz cup 300 and the surface of a silicon solution is 20cm, the middle-layer bell jar 120 is 1 layer, 4 first guide holes 111 and 4 second guide holes 121 are used for doping, and the experiment is carried out for three times.
Comparative example one (multilayer bell jar no pilot hole):
when a 5-inch single crystal rod is pulled in a 1806 furnace by adopting a Czochralski single crystal pulling mode, the size of a thermal field is 18 inches, the feeding amount is 50kg, the phosphorus doping amount is 200g, the constant-diameter furnace pressure is 5pa, the doping supplementing furnace pressure is 10pa, and the argon flow is 60slm, then the steps of melting, seeding and shouldering are carried out to enter the constant-diameter stage, during doping supplementing, the vacuum pumping is carried out, the distance between a quartz cup 300 and the surface of a silicon solution is 20cm, the middle-layer bell cover 120 is 1 layer, and the doping supplementing is carried out without the first guide hole 111 and the second guide hole 121, and the experiment is carried out for three times.
Comparative example two (single layer bell):
when a 5-inch single crystal bar is pulled in a 1806 furnace by adopting a Czochralski single crystal pulling mode, the size of a thermal field is 18 inches, the feeding amount is 50kg, the phosphorus doping amount is 200g, the constant diameter furnace pressure is 5pa, the complementary doping furnace pressure is 4pa, and the argon flow is 60slm, then the steps of material melting, seeding and shouldering are carried out to enter the constant diameter stage, the vacuum pumping is carried out during the complementary doping, the distance between a quartz cup 300 and the surface of a silicon solution is 20cm, a single-layer quartz bell jar 100 is adopted for doping, and the experiment is carried out for three times.
Three sets of experimental data for phosphorus doping were compared, with the following process parameters, as shown in table 1:
TABLE 1
The results obtained for example one, comparative example one, and comparative example two are shown in table 2:
TABLE 2
As shown in fig. 4 and 5, the doping efficiency of the quartz bell jar 100 according to the first embodiment of the present invention is significantly higher than that of the single-layer bell jar doping according to the second embodiment of the present invention under the same process conditions according to table 2. In the same doping amount, through multiple experimental comparisons, the average resistance of the head of the multilayer bell jar in the first embodiment is 23.8% lower than that of the head of the single-layer bell jar in the second embodiment; the resistivity of the crystal bar is kept near 0.0011, the resistivity of the tail of the crystal bar reaches 0.001, the crystal bar is contacted with silicon melt through the structural circulation of the multilayer quartz bell jar 100, gasified phosphorus is doped through the melt, and the doping efficiency is improved; the resistivity of the multi-layer bell jar bottom-opened guiding hole of the first example is not high enough and low enough compared with the multi-layer bell jar bottom-opened guiding hole of the first comparative example, which shows that although phosphorus is doped, the doping concentration is not uniform, so that the resistance of different positions of the crystal bar fluctuates and is not uniform enough.
2. The arsenic-doped examples and comparative examples are as follows:
example two (multilayer bell jar of the invention with pilot hole):
when a 6-inch single crystal ingot is pulled in a 1806 furnace by adopting a Czochralski single crystal pulling mode, the size of a thermal field is 18 inches, the feeding amount is 65kg, the arsenic doping amount is 400g, the constant-diameter furnace pressure is 8Kpa, the doping supplementing furnace pressure is 13Kpa, and the argon flow is 60slm, then the steps of melting, seeding and shouldering are carried out, the constant-diameter stage is carried out, during doping, the vacuum pumping is carried out, the distance between a quartz cup 300 and the surface of a silicon solution is 20cm, the middle-layer bell jar 120 is 1 layer, 4 first guide holes 111 and 4 second guide holes 121 are used for doping, and the experiment is carried out for three times.
COMPARATIVE EXAMPLE III (multilayer bell jar without pilot hole)
When a 6-inch single crystal ingot is pulled in a 1806 furnace by adopting a Czochralski single crystal pulling mode, the size of a thermal field is 18 inches, the feeding amount is 65kg, the arsenic doping amount is 400g, the constant diameter furnace pressure is 8Kpa, the supplementing and doping furnace pressure is 13Kpa, the argon flow is 60slm, then the steps of material melting, seeding and shouldering are carried out to enter a constant diameter stage, in the supplementing and doping process, the vacuum pumping is carried out, the distance between a quartz cup 300 and the surface of a silicon solution is 20cm, the middle layer bell cover 120 is 1 layer, and the supplementing and doping are carried out without a first guide hole 111 and a second guide hole 121, and the experiment is carried out for three times.
COMPARATIVE EXAMPLE four (Single-layer bell jar)
When a 6-inch single crystal ingot is pulled in a 1806 furnace by adopting a Czochralski single crystal pulling mode, the size of a thermal field is 18 inches, the feeding amount is 65kg, the arsenic doping amount is 400g, the constant-diameter furnace pressure is 8Kpa, the doping furnace pressure is 13Kpa, the argon flow is 60slm, then the steps of melting, seeding and shouldering are carried out, the constant-diameter stage is entered, the vacuum pumping is carried out during doping, the distance between a quartz cup 300 and the surface of a silicon solution is 20cm, a single-layer quartz bell jar 100 is adopted for doping, and the experiment is carried out for three times.
Three sets of experimental data for phosphorus doping were compared, with the following process parameters, as shown in table 3:
TABLE 3
The results obtained for example two, comparative example three, and comparative example four are shown in table 4:
TABLE 4
As shown in fig. 6, plotted from table 4, the doping efficiency of the quartz bell jar 100 according to the second embodiment of the present invention is significantly higher than the non-guiding hole doping of the four-layer bell jar and the three-layer bell jar according to the third embodiment under the same process conditions. In the same doping amount, through multiple experimental comparisons, the average value of the head resistance of the multilayer bell jar of the second embodiment is 22% lower than that of the head resistance of the single-layer bell jar of the fourth embodiment, the resistivity of the crystal bar is kept near 0.0025, the resistivity of the tail of the crystal bar reaches 0.002, the structure of the multilayer quartz bell jar 100 is circularly contacted with silicon melt, gasified arsenic is doped through the melt, and the doping efficiency is improved.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (10)
1. A doping apparatus for heavily doping a silicon single crystal, characterized in that: the quartz clock cover comprises a plurality of middle-layer clock covers, the heights of the inner-layer clock covers, the middle-layer clock covers and the outer-layer clock covers are sequentially reduced, the inner-layer clock covers, the middle-layer clock covers and the outer-layer clock covers are coaxial, the bottom walls of the inner-layer clock covers, the middle-layer clock covers and the outer-layer clock covers are located on the same horizontal plane, the middle-layer clock covers are sleeved outside the inner-layer clock covers, the outer-layer clock covers are sleeved outside the middle-layer clock covers, a plurality of first guide holes are uniformly formed in the bottom ring wall of the inner-layer clock cover, and a plurality of second guide holes are uniformly formed in the bottom ring wall of the middle-layer clock cover.
2. A doping apparatus for heavily doping a silicon single crystal as set forth in claim 1, wherein: the first guide holes and the second guide holes are arranged in a staggered mode.
3. A doping apparatus for heavily doping a silicon single crystal as set forth in claim 1, wherein: the height of the first guide hole is 8-12cm from the bottom wall.
4. A doping apparatus for heavily doping a silicon single crystal as set forth in claim 1, wherein: the height of the second guide hole is 4-8cm from the bottom wall.
5. A doping apparatus for heavily doping a silicon single crystal as set forth in claim 1, wherein: the doping device for heavily doping the silicon single crystal further comprises a quartz crucible, wherein the quartz crucible is filled with a silicon solution, the quartz crucible is coaxial with the quartz bell jar, and the distance from the bottom wall of the quartz bell jar to the silicon solution is 10-30mm.
6. A doping apparatus for heavily doping a silicon single crystal as claimed in claim 1, wherein: the doping device for heavily doping the silicon single crystal further comprises a quartz cup, wherein the quartz cup is coaxial with the inner-layer bell jar, and the quartz cup is connected with the top of the inner-layer bell jar.
7. A doping method for heavily doping a silicon single crystal, characterized by: the method for doping silicon single crystal according to any one of claims 1 to 6, comprising the steps of:
s1: filling the doping elements into a quartz cup, placing the quartz cup into an inner-layer bell jar, adjusting the furnace pressure to a preset furnace pressure, and introducing a preset argon flow;
s2: lowering the quartz bell jar to a position of 10-30mm of the silicon solution, and performing complementary doping;
s3: and after the complementary doping element is volatilized, taking out the quartz bell jar, and finishing the complementary doping.
8. A method for heavily doping a silicon single crystal as claimed in claim 7, wherein: the doping element is arsenic or phosphorus.
9. A doping method for heavily doping a silicon single crystal as claimed in claim 7, wherein: the predetermined furnace pressure is greater than twice the furnace pressure before the back-doping.
10. A method for heavily doping a silicon single crystal as claimed in claim 7, wherein: the predetermined argon flow is 50-100slm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211011811.2A CN115323489A (en) | 2022-08-23 | 2022-08-23 | Doping method and doping device for heavily doped silicon single crystal |
Applications Claiming Priority (1)
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998035074A1 (en) * | 1997-02-06 | 1998-08-13 | Crysteco, Inc. | Method and apparatus for growing crystals |
| JP2001342094A (en) * | 2000-05-31 | 2001-12-11 | Komatsu Electronic Metals Co Ltd | Device and method for monocrystal pulling surely executed with arsenic doping |
| CN203474956U (en) * | 2013-08-30 | 2014-03-12 | 宁晋赛美港龙电子材料有限公司 | Volatilizer device used for arsenic impurity heavy doping of mono-crystal furnace |
| CN111364098A (en) * | 2018-12-26 | 2020-07-03 | 有研半导体材料有限公司 | Doping device for heavily-doped Czochralski single crystal |
| CN113668048A (en) * | 2021-08-20 | 2021-11-19 | 宁夏中欣晶圆半导体科技有限公司 | Low-resistivity heavily-doped phosphorus silicon single crystal production device and method |
-
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- 2022-08-23 CN CN202211011811.2A patent/CN115323489A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998035074A1 (en) * | 1997-02-06 | 1998-08-13 | Crysteco, Inc. | Method and apparatus for growing crystals |
| JP2001342094A (en) * | 2000-05-31 | 2001-12-11 | Komatsu Electronic Metals Co Ltd | Device and method for monocrystal pulling surely executed with arsenic doping |
| CN203474956U (en) * | 2013-08-30 | 2014-03-12 | 宁晋赛美港龙电子材料有限公司 | Volatilizer device used for arsenic impurity heavy doping of mono-crystal furnace |
| CN111364098A (en) * | 2018-12-26 | 2020-07-03 | 有研半导体材料有限公司 | Doping device for heavily-doped Czochralski single crystal |
| CN113668048A (en) * | 2021-08-20 | 2021-11-19 | 宁夏中欣晶圆半导体科技有限公司 | Low-resistivity heavily-doped phosphorus silicon single crystal production device and method |
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