CN115323336A - Sputtering method of LED chip - Google Patents
Sputtering method of LED chip Download PDFInfo
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- CN115323336A CN115323336A CN202210959042.2A CN202210959042A CN115323336A CN 115323336 A CN115323336 A CN 115323336A CN 202210959042 A CN202210959042 A CN 202210959042A CN 115323336 A CN115323336 A CN 115323336A
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 113
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052786 argon Inorganic materials 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000007888 film coating Substances 0.000 abstract description 2
- 238000009501 film coating Methods 0.000 abstract description 2
- 238000007733 ion plating Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a sputtering method, and belongs to the technical field of film coating. In the sputtering method, the flow of argon is 280-320 sccm, and the vacuum degree of the sputtering chamber is 4.0E-3-5.0E-3 Torr. The sputtering method carries out stress balance by changing the vacuum degree of a sputtering cavity and the sputtering rate corresponding to the argon flow, eliminates the stress of the film and ensures the stability of the film; meanwhile, the production efficiency and the productivity can be improved.
Description
Technical Field
The invention belongs to the technical field of film coating, and particularly relates to a sputtering method of an LED chip.
Background
Metal Sputter, belongs to three basic methods of PVD (physical vapor deposition): vacuum evaporation, sputtering, ion plating (hollow cathode ion plating, hot cathode ion plating, arc ion plating, active reactive ion plating, radio frequency ion plating, direct current discharge ion plating). The metal sputtering comprises magnetron sputtering, and the working principle of the magnetron sputtering is as follows: under the action of the electric field E, electrons collide with argon (Ar) atoms in the process of flying to the substrate, so that Ar is generated by ionization + And new electrons; novel electron-steering substrates, ar + The sputtering target material is accelerated to fly to a cathode target under the action of an electric field and bombarded on the surface of the target at high energy, so that the sputtering target material is sputtered.
The magnetron sputtering process is complex, the price of a machine is expensive (about 500-1500 ten thousand RMB), and the magnetron sputtering needs to be carried out under the high vacuum with thin air (less than 10E-7 Torr) to reach the high purity of the sputtering target material, so that the vacuum pumping time is long and reaches more than one hour. And then the needed target material is sputtered on the substrate through the sputtering process, so that the productivity is relatively low. How to increase the productivity of the machine becomes an urgent requirement.
Two common ways to increase the sputtering process rate are to increase the RF/DC power to cause Ar striking the target + With higher kinetic energy, the number of target atoms or molecules sputtered out after impacting the target is larger, thereby improving the sputtering rate. Another approach is to shorten the distance between the metal target and the substrate, for example, in chinese patent publication No. CN104112640B, the sputtering rate is increased by controlling the distance between the target and the pedestal, because the sputtering region is a sector region, and the closer to the target, the higher the sputtering rate. However, the former is liable to change the stress of the film and "damage" the substrate, and the latter is liable to cause poor uniformity of the sputtered film thickness.
Disclosure of Invention
In order to overcome the defects of the prior art, the present invention provides a sputtering method for an LED chip with a fast sputtering rate and a good film stability.
In order to solve the technical problems, the invention adopts the technical scheme that: a sputtering method of LED chip comprises argon flow of 280-320 sccm and vacuum degree of sputtering cavity of 4.0E-3-5.0E-3 Torr.
The method comprises the following steps: and sputtering a first NiV layer, an Ag layer, a second NiV layer, a first TiW layer, a third NiV layer and a second TiW layer on the surface of the base material in sequence.
The invention has the beneficial effects that: according to the invention, stress balance is carried out by changing the vacuum degree of the sputtering cavity and the sputtering rate corresponding to the argon flow, the stress of the film layer is eliminated, and the stability of the film layer is ensured; meanwhile, the production efficiency and the productivity can be improved.
Drawings
FIG. 1 is a line graph of argon flow versus sputtering rate for an embodiment of the present invention;
FIG. 2 is a graph of a chamber vacuum-3 kw stress line for an embodiment of the present invention;
FIG. 3 is a schematic diagram of an LED chip according to an embodiment of the present invention;
fig. 4 is a schematic diagram of an LED chip according to embodiment 1 of the present invention;
fig. 5 is a schematic diagram of an LED chip of comparative example 1 according to the present invention.
Detailed Description
In order to explain the technical contents, the objects and the effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
The most key concept of the invention is as follows: stress balance is carried out by changing the vacuum degree of the sputtering cavity and the sputtering rate corresponding to the argon flow, the stress of the film layer is eliminated, and the stability of the film layer is ensured; meanwhile, the production efficiency and the productivity can be improved.
Referring to FIG. 1 to FIG. 3, in the sputtering method of the LED chip of the present invention, the flow rate of argon is 280-320 sccm, and the vacuum degree of the sputtering chamber is 4.0E-3-5.0E-3 Torr.
As can be seen from the above description, the beneficial effects of the present invention are: the sputtering rate is controlled by increasing the flow of inert gas (argon Ar) introduced in the sputtering process, the amount of plasma is increased along with the increase of the flow of the inert gas, and more Ar exists + (argon positive ions, medium particles, do not participate in the reaction) impact the metal target, thereby improving the speed of sputtering the film.
In the case of a fixed magnetron sputtering magnetic field, the sputtering rate is not increased proportionally by increasing the argon flow rate, wherein an optimal value exists, and when the optimal value is exceeded, the sputtering rate is gradually reduced. Small rate changes can result in large film stress, which can lead to film cracking and greatly affect the quality and function of the film. According to the invention, stress balance is carried out by changing the vacuum degree of the sputtering cavity and the sputtering rate corresponding to the argon flow, the stress of the film layer is eliminated, and the stability of the film layer is ensured; meanwhile, the production efficiency and the productivity can be improved.
Further, the method comprises the following steps: and sputtering a first NiV layer, an Ag layer, a second NiV layer, a first TiW layer, a third NiV layer and a second TiW layer on the surface of the base material in sequence.
According to the description, the stress balance is carried out by changing the vacuum degree of the sputtering cavity and the sputtering rate corresponding to the argon flow, the stress of the film layer is eliminated, and the stability of the film layer is ensured; meanwhile, the production efficiency and the productivity can be improved. Because of the large TiW stress, the TiW double-layer sputtering film is divided into TiW double layers for eliminating the stress and is sputtered alternately with NiV.
Further, in the sputtering of the first NiV layer, the sputtering is performed on the surface of the base material for 21 to 23 seconds at a power of 195 to 205W.
As can be seen from the above description, the first NiV layer functions as an adhesion on the substrate, enabling ohmic contact. So as to meet the requirement of thickness consistency and protect the Ag layer under the bottom from being damaged by ion bombardment due to lower power.
Furthermore, the sputtering of the Ag layer is divided into a first sputtering and a second sputtering.
From the above description, it can be seen that sputtering is performed twice to obtain a smooth silver mirror film layer and to increase the sputtering rate.
Further, the first sputtering is performed on the surface of the base material for 670 to 690 seconds at a power of 245 to 255W.
From the above description, the layer has a reflection function after the first sputtering, the power is not too high, the low power can ensure the smoothness of the silver mirror film layer, the reflectivity is improved, and the brightness of the product is improved;
further, the second sputtering is carried out for 1150-1250 s to sputter the surface of the substrate.
Furthermore, the power is 750-850W during the second sputtering.
As can be seen from the above description, the second sputtering power is higher, which increases the sputtering rate.
Further, when the second NiV layer is sputtered, the surface of the base material is sputtered for 350-370 s.
From the above description, it can be known that different metals have different contact viscosities with semiconductors, niV adheres well to semiconductors, ohmic contact is good, resistance is small, sputtering of the second NiV layer can increase adhesion, the film layer is not easy to fall off, and stress of the Ag mirror film layer can be eliminated.
Furthermore, when the third NiV layer is sputtered, the sputtering is carried out on the surface of the base material for 350-370 s, and the power is 1550-1650W.
Furthermore, when the first TiW layer and the second TiW layer are sputtered, the surface of the base material is sputtered for 2120-2140 s, and the power is 1550-1650W.
From the above description, the TiW layer protects the Ag metal from oxidation.
Referring to fig. 1 to fig. 3, a first embodiment of the present invention is:
a sputtering method of an LED chip comprises the following steps: and sputtering a first NiV layer, an Ag layer, a second NiV layer, a first TiW layer, a third NiV layer and a second TiW layer on the surface of the base material in sequence.
During sputtering, the flow rate of argon gas was 300sccm, and the degree of vacuum in the sputtering chamber was 4.8E-3Torr. The rotation speed is 8rpm, and the distance from the target to the substrate is 110mm.
When the first NiV layer is sputtered, the surface of the base material is sputtered in 22.5s with the power of 200W.
The sputtering of the Ag layer is divided into a first sputtering and a second sputtering. The first sputtering is carried out on the surface of the base material in 680s, and the power is 250W; the second sputtering was carried out at a power of 800W for 1200 s.
And when the second NiV layer and the third NiV layer are sputtered, the surface of the base material is sputtered for 360s, and the power is 1600W.
When the first TiW layer and the second TiW layer are sputtered, the surface of the base material is sputtered in 2130s with the power of 1600W.
The second embodiment of the invention is as follows:
a sputtering method of an LED chip comprises the following steps: and sputtering a first NiV layer, an Ag layer, a second NiV layer, a first TiW layer, a third NiV layer and a second TiW layer on the surface of the base material in sequence.
During sputtering, the flow rate of argon gas was 280sccm, and the vacuum degree of the sputtering chamber was 4.0E-3Torr. The rotation speed is 8rpm, and the distance from the target to the substrate is 110mm.
When the first NiV layer is sputtered, the substrate surface is sputtered for 21s at a power of 195W.
The sputtering of the Ag layer is divided into a first sputtering and a second sputtering. Sputtering the surface of the base material for 670s for the first time, wherein the power is 245W; the second sputtering was performed to sputter the substrate surface for 1150s at 750W.
And when the second NiV layer and the third NiV layer are sputtered, the surface of the base material is sputtered for 350s, and the power is 1550W.
When the first TiW layer and the second TiW layer are sputtered, the surface of the base material is sputtered at 2120s with the power of 1550W.
The third embodiment of the invention is as follows:
a sputtering method of an LED chip comprises the following steps: and sputtering a first NiV layer, an Ag layer, a second NiV layer, a first TiW layer, a third NiV layer and a second TiW layer on the surface of the base material in sequence.
During sputtering, the flow rate of argon was 320sccm, and the degree of vacuum in the sputtering chamber was 5.0E-3Torr. The rotation speed is 8rpm, and the distance from the target to the substrate is 110mm.
When the first NiV layer is sputtered, the substrate surface is sputtered for 23s with a power of 205W.
The sputtering of the Ag layer is divided into a first sputtering and a second sputtering. Sputtering the surface of the base material for 690s in the first sputtering with the power of 255W; the second sputtering was performed at a power of 850W on the substrate surface for 1250 s.
When the second NiV layer and the third NiV layer are sputtered, the surface of the base material is sputtered for 370s, and the power is 1650W.
When the first TiW layer and the second TiW layer are sputtered, the surface of the base material is sputtered for 2140s, and the power is 1650W.
When the first TiW layer and the second TiW layer are sputtered, the surface of the base material is sputtered for 2120-2140 s with the power of 1550-1650W.
Comparative example 1 of the present invention is:
a sputtering method of an LED chip comprises the following steps: and sputtering a first NiV layer, an Ag layer, a second NiV layer, a first TiW layer, a third NiV layer and a second TiW layer on the surface of the base material in sequence.
During sputtering, the flow of argon gas was 200sccm, and the vacuum degree of the sputtering chamber was 3X 10E-3Torr. The rotation speed is 8rpm, and the distance from the target to the substrate is 110mm.
When the first NiV layer is sputtered, the substrate surface is sputtered at a power of 270W for 22.5 s.
The sputtering of the Ag layer is divided into a first sputtering and a second sputtering. The first sputtering is carried out on the surface of the base material within 860s, and the power is 250W; the second sputtering was performed at 1775s to sputter the substrate surface at 700W.
And when the second NiV layer and the third NiV layer are sputtered, the surface of the base material is sputtered for 450s, and the power is 1600W.
When the first TiW layer and the second TiW layer are sputtered, the surface of the base material is sputtered for 2670s with the power of 1600W.
The sputtering times for example 1 and comparative example 1 are compared in table 1.
TABLE 1
As can be seen from Table 1, the LED chip sputtering method has the advantages that the productivity is improved by 15.04%, and the production efficiency is obviously improved.
The argon flow test, under the conditions of example 1, was performed with sputtering at argon flow rates of 160, 180, 200, 220, 240, 280, 300, 320, 340, 360sccm, respectively, with the sputtering rates shown in FIG. 1.
As can be seen from FIG. 1, the optimum value of the argon flow rate was 280 to 320sccm, the sputtering rate was about 1.25 times as high as that of 200sccm in comparative example 1, and then the flow rate was increased to enter the saturation region, and the degree of vacuum was decreased due to the increase in the gas flow rate, and the sputtering rate was slightly decreased.
Vacuum degree test, in the conditions of example 1, tiW was sputtered under vacuum degrees of 1.30E-3, 2.10E-3, 3.40E-3, 4.00E-3, 5.00E-3, 6.00E-3, 7.00E-3, 1.00E-2, 1.40E-2Torr, respectively, and the stress trend of 3kw is shown in FIG. 2.
As can be seen from FIG. 2, the stress of TiW sputtered under different vacuum degrees was tested, and 0 stress was found to be between 4.0E-3 and 5.0E-3.
Fig. 4 is a schematic diagram of an LED chip of example 1, fig. 5 is a schematic diagram of an LED chip of comparative example 1, and fig. 5 shows a crack.
In summary, the sputtering method provided by the invention performs stress balance by changing the vacuum degree of the sputtering cavity and the sputtering rate corresponding to the argon flow, eliminates the stress of the film layer, and simultaneously adjusts the sputtering time and sputtering power of each layer, thereby ensuring the stability of the film layer, improving the production efficiency and improving the productivity.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (10)
1. The sputtering process of LED chip features the argon flow rate of 280-320 sccm and the vacuum degree of the sputtering cavity of 4.0E-3-5.0E-3 Torr.
2. The sputtering method of LED chips of claim 1, comprising the steps of: and sputtering a first NiV layer, an Ag layer, a second NiV layer, a first TiW layer, a third NiV layer and a second TiW layer on the surface of the base material in sequence.
3. The method of claim 2, wherein the power of the first NiV layer is 195-205W.
4. The method of claim 2, wherein the Ag layer is sputtered by a first sputtering and a second sputtering.
5. The method of claim 4, wherein the first sputtering is performed for 670-690 s.
6. The sputtering method of LED chip according to claim 4, wherein the second sputtering is performed on the surface of the substrate for 1150-1250 s.
7. The method of claim 4, wherein the power of the second sputtering is 750-850W.
8. The method of claim 2, wherein the second NiV layer is sputtered onto the surface of the substrate for 350-370 s.
9. The method of claim 2, wherein the third NiV layer is sputtered onto the surface of the substrate for 350-370 s.
10. The method of claim 2, wherein the first TiW layer and the second TiW layer are sputtered onto the surface of the substrate in 2120-2140 s.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63142834A (en) * | 1986-12-05 | 1988-06-15 | Sharp Corp | Semiconductor device |
| US20040060812A1 (en) * | 2002-09-27 | 2004-04-01 | Applied Materials, Inc. | Method for modulating stress in films deposited using a physical vapor deposition (PVD) process |
| CN108767083A (en) * | 2018-05-30 | 2018-11-06 | 河源市众拓光电科技有限公司 | A kind of adjustable light emitting diode (LED) chip with vertical structure of stress and preparation method thereof |
| CN109786514A (en) * | 2018-12-27 | 2019-05-21 | 华灿光电（浙江）有限公司 | A kind of manufacturing method of LED epitaxial slice |
| CN114369804A (en) * | 2022-01-11 | 2022-04-19 | 北京北方华创微电子装备有限公司 | Thin film deposition method |
| CN217114430U (en) * | 2021-09-29 | 2022-08-02 | 福建兆元光电有限公司 | Silver mirror film layer structure |
-
2022
- 2022-08-10 CN CN202210959042.2A patent/CN115323336A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63142834A (en) * | 1986-12-05 | 1988-06-15 | Sharp Corp | Semiconductor device |
| US20040060812A1 (en) * | 2002-09-27 | 2004-04-01 | Applied Materials, Inc. | Method for modulating stress in films deposited using a physical vapor deposition (PVD) process |
| CN108767083A (en) * | 2018-05-30 | 2018-11-06 | 河源市众拓光电科技有限公司 | A kind of adjustable light emitting diode (LED) chip with vertical structure of stress and preparation method thereof |
| CN109786514A (en) * | 2018-12-27 | 2019-05-21 | 华灿光电（浙江）有限公司 | A kind of manufacturing method of LED epitaxial slice |
| CN217114430U (en) * | 2021-09-29 | 2022-08-02 | 福建兆元光电有限公司 | Silver mirror film layer structure |
| CN114369804A (en) * | 2022-01-11 | 2022-04-19 | 北京北方华创微电子装备有限公司 | Thin film deposition method |
Non-Patent Citations (1)
| Title |
|---|
| 王超楠等: "气体流量对磁控溅射制备ZnO薄膜沉积速率以及阻隔能力的影响", 《科技风》, no. 15, pages 126 * |
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