CN115314067B - Miniaturized radio frequency front-end circuit structure suitable for general sense integration - Google Patents
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- 230000010354 integration Effects 0.000 title claims abstract description 21
- 230000005641 tunneling Effects 0.000 claims abstract description 65
- 238000004891 communication Methods 0.000 claims abstract description 24
- 239000003990 capacitor Substances 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000006870 function Effects 0.000 description 7
- 238000011161 development Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008447 perception Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
Abstract
The invention discloses a miniaturized radio frequency front-end circuit structure suitable for general sense integration, and belongs to the technical field of integration of wireless communication and radar detection. The circuit structure comprises an I/O interface, a matching circuit, a resonant tunneling diode, an inductor, a circulator, a resistor, a first biaser and a second biaser; the direct current signal fed into the first bias device enables the resonant tunneling diode to work in a negative resistance area, and the modulating signal modulates the radio frequency signal generated by the resonant tunneling diode to form a radio frequency modulating signal and radiate the radio frequency modulating signal through the I/O interface; the DC signal fed into the second bias causes the resonant tunneling diode to operate in a nonlinear region, detecting the RF signal received by the I/O interface. The invention adopts the form of receiving and transmitting integration, simplifies the circuit structure of the system, improves the stability and the reliability of the system, and has the characteristics of miniaturization, simple structure, low cost and low power consumption.
Description
Technical Field
The invention relates to the technical field of wireless communication and radar detection integration, in particular to a miniaturized radio frequency front-end circuit structure suitable for general sense integration.
Background
With the development of new materials, information technology and microelectronic technology, electronic information systems and technologies have greatly progressed, and more mature functional systems such as reconnaissance, interference, radar detection and wireless communication are gradually formed. These functions are essentially generated at different times, facing different needs. Although the best performance can be obtained under the condition of exclusive resources, the lack of uniform planning design among each other leads to insufficient parallel coordination capability. In recent years, under the drive of novel civil and military requirements such as 5G wireless communication, internet of things and intelligent cooperative combat, the bandwidth requirements of the existing electronic information system are increased, the working frequency bands are continuously overlapped, and the number of devices is increased exponentially. Meanwhile, the 6G network is expected to realize the integration of a communication network and a perception network, and the development of the sense of general integration is the trend of the times. If several devices such as radars and communications work in parallel on the same platform or the same area, serious electromagnetic spectrum congestion and interference, low resource utilization rate, complex management and control and other problems are necessarily caused. Along with the rapid development of science and technology and the continuous expansion of application demands, the difference of a perception system and a wireless communication system in the aspects of receiving and transmitting channels, signal and data processing, management and control is gradually reduced, the traditional single-function circuit is continuously developed towards the directions of higher frequency band, lower loss and higher efficiency, and an integrated trend is presented, so that new opportunities and challenges are provided for the development of future electronic information systems.
Early researches were mainly directed to a method for coexistence of radar and communication, in which the radar and the communication are two independent systems, and the receiving and transmitting interfaces are independent, so that the system is huge in size and high in cost. The mode of a circulator or a switch is adopted at the present stage, so that the transceiver shares the same interface, but the circuit mode of the rear end is still divided into a typical transmitter and a typical receiver, the circuit area is large, and the system structure is complex. The traditional circuit design mode is difficult to realize the requirements of high integration level, miniaturization, low power consumption, portability and the like of the system.
Disclosure of Invention
In view of this, the present invention provides a miniaturized radio frequency front-end circuit structure suitable for sense-on integration; the system adopts a mode of receiving and transmitting integration, simplifies the circuit structure of the system, improves the stability and the reliability of the system, and has the characteristics of miniaturization, simple structure, low cost and low power consumption.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a miniaturized radio frequency front-end circuit structure suitable for a general sense integration comprises an I/O interface, a matching circuit structure, a resonant tunneling diode, an inductor, a circulator, a resistor, a first biaser and a second biaser;
the I/O interface is used for transmitting and receiving radio frequency signals;
the matching circuit is mainly used for circuit matching between the resonant tunneling diode and the I/O interface and is used for realizing maximum power transmission;
the resonant tunneling diode is used as a direct modulator to modulate the transmitted radio frequency signal, so that a communication function is realized, and the resonant tunneling diode is used as a nonlinear device to sense the received radio frequency signal, so that a sensing function is realized;
the inductor is used for adjusting the working frequency of the radio frequency front end;
the capacitor is mainly used for shorting radio frequency signals to ground during transmitting, reduces radio frequency signal loss, forms a filter with the short-circuit inductor during receiving, and prevents high frequency signals from passing through;
the circulator is used for realizing isolation of transmitting and receiving signals;
the resistor is mainly used for a communication end, inhibits low-frequency oscillation and improves the stability of a radio frequency front end;
the first bias device is used for passing the direct current feed and the modulation signal, and the second bias device is used for passing the direct current feed and the sensing signal;
the direct current signal fed into the first bias device enables the resonant tunneling diode to work in a negative resistance area, and the modulating signal modulates the radio frequency signal generated by the resonant tunneling diode to form a radio frequency modulating signal and radiate the radio frequency modulating signal through the I/O interface; the DC signal fed into the second bias causes the resonant tunneling diode to operate in a nonlinear region, detecting the RF signal received by the I/O interface.
When the three ports of the first biaser are used for transmitting, the first port 11 is externally connected with a direct current signal, the second port 12 is externally connected with a modulation signal, the third port 13 is a modulation and direct current signal, and the third port 13 is connected with one side of the resistor 2; three ports of the circulator 3, one port 33 being a common port for receiving and transmitting; the other side of the resistor 2 is connected with the first port 31 of the circulator 3 in a side-joint manner, the third port 33 of the circulator is connected with one side of the capacitor 4, the other side of the capacitor 4 is connected with one side of the inductor 5, the other side of the inductor 5 is connected with one side of the resonant tunneling diode 6, the other side of the resonant tunneling diode 6 is connected with one side of the matching circuit structure 7, and the other side of the matching circuit structure 7 is connected with the I/O interface 8;
as receiving, the I/O interface 8 is connected to one side of the matching circuit structure 7, the other side of the matching circuit 7 is connected to the resonant tunneling diode 6, the other side of the resonant tunneling diode 6 is connected to one side of the inductor 5, the other side of the inductor 5 is connected to one side of the capacitor 4, and the other side of the capacitor 4 is connected to the third port 33 of the circulator; the second biaser has three ports, the second port 32 of the circulator connects the third port 93 of the second biaser; the first port 91 of the second bias device is externally connected with a direct current signal, and the second port 92 is used for outputting a sensing signal.
Furthermore, the I/O interface can select an on-chip integrated antenna, a horn antenna, a metamaterial antenna, a standard waveguide port or an SMA connector according to different frequency bands and application requirements.
Furthermore, the matching structure is realized by adopting microstrip lines, slot lines, coplanar lines or coplanar waveguides.
Further, the inductor is realized by a short-circuit surface coplanar waveguide, a short-circuit surface microstrip line or a short-circuit surface coplanar line.
Furthermore, the circulator can select a switch transmission line type, a differential power divider and power synthesizer based or a non-reciprocal active phase shifter type according to different working frequency bands and application requirements.
Further, the biaser is implemented in an external component or integrated on-chip manner.
Furthermore, the on-chip integrated antenna can be realized by adopting a slot antenna, a bow tie antenna, a microstrip antenna or a phased array antenna.
Further, the resonant tunneling diode may be implemented with gallium nitride, indium phosphide, silicon, or silicon germanium materials.
The beneficial effects generated by adopting the technical scheme are as follows:
1. the invention adopts a single resonance tunneling diode mode to realize the radio frequency front end with integrated sense, thereby reducing the power consumption and complexity of the system.
2. The invention adopts a design form of integrating sensing and communication, thereby greatly reducing the cost and the volume of the system.
3. The invention adopts time-sharing operation and multiplexes key core circuits, simplifies the architecture of the system, and is convenient for high-efficiency integration and large-scale production realization.
Drawings
Fig. 1 is a schematic diagram of a miniaturized rf front-end circuit structure suitable for sense-on-all integration according to an embodiment of the present invention.
FIG. 2 is a graph of I-V of a resonant tunneling diode according to an embodiment of the present invention.
Detailed Description
The invention will be further described with reference to the drawings and detailed description.
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly described below, and it will be apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
The miniaturized radio frequency front-end circuit structure suitable for the general sense integration is characterized by comprising an I/O interface, a matching circuit structure, a resonant tunneling diode, an inductor, a circulator, a resistor, a first biaser and a second biaser.
The I/O interface is used for transmitting and receiving radio frequency signals.
The matching circuit is mainly used for circuit matching between the resonant tunneling diode and the I/O interface and is used for realizing maximum power transmission.
The resonant tunneling diode is used as a direct modulator to modulate the transmitted radio frequency signal, so that a communication function is realized, and the resonant tunneling diode is used as a nonlinear device to sense the received radio frequency signal, so that a sensing function is realized.
The inductor is used for adjusting the working frequency of the radio frequency front end.
The capacitor is mainly used for shorting radio frequency signals to ground during transmitting, reduces radio frequency signal loss, forms a filter with the short-circuit inductor during receiving, and prevents high frequency signals from passing through;
the circulator is used for isolating the transmitting and receiving signals.
The resistor is mainly used for a communication end, inhibits low-frequency oscillation and improves the stability of a radio frequency front end.
The first bias device is used for direct current feed and passing of a modulation signal, and the second bias device is used for direct current feed and passing of a sensing signal.
Preferably, the I/O interface is used for selecting forms such as an on-chip integrated antenna, a horn antenna, a metamaterial antenna, a standard waveguide port, an SMA connector and the like according to different frequency bands and application requirements.
Preferably, the matching structure may be formed by microstrip lines, slot lines, coplanar waveguides, and the like.
Preferably, the communication and sensing core device employed is a resonant tunneling diode.
Preferably, the inductor is realized in the form of a short-circuit surface coplanar waveguide or a short-circuit surface microstrip or a short-circuit surface coplanar line.
Preferably, the circulator can select different forms such as a switch transmission line type, a differential power divider and power synthesizer based type, a non-reciprocal active phase shifter based on different working frequency bands and application requirements.
Preferably, the biaser biantee may be implemented by using an external component or by using an on-chip integration method.
Preferably, the on-chip integrated antenna may be implemented in the form of a slot antenna, a bow tie antenna, a microstrip antenna, a phased array antenna, etc.
Preferably, the resonant tunneling diode can be implemented using gallium nitride, indium phosphide, silicon germanium, and the like.
The following is a more specific example:
fig. 1 is a schematic diagram of a miniaturized rf front-end circuit structure suitable for sense-on-all integration according to an embodiment of the present invention. As shown in fig. 1, the embodiment provides a miniaturized radio frequency front-end circuit structure suitable for a sense integration, which comprises an I/O interface, a matching circuit structure, a resonant tunneling diode RTD, an inductance, a circulator, a resistance, a first biaser and a second biaser.
The I/O interface is used for transmitting and receiving radio frequency signals.
The matching circuit is mainly used for circuit matching between the resonant tunneling diode and the I/O interface, and maximum power transmission is realized.
The RTD is used as a direct modulator to modulate the transmitted radio frequency signals, so that a communication function is realized, and the RTD is used as a nonlinear device to sense the received radio frequency signals, so that a sensing function is realized.
The inductor is used for adjusting the working frequency of the radio frequency front end.
The capacitor is mainly used for shorting radio frequency signals to ground during transmitting, reduces radio frequency signal loss, and forms a filter with the shorted inductor during receiving to prevent high frequency signals from passing through.
The circulator mainly realizes isolation of transmitting and receiving signals.
The resistor is mainly used for a communication end, inhibits low-frequency oscillation and improves the stability of a radio frequency front end.
The first bias device is used for direct current feed and passing of a modulation signal, and the second bias device is used for direct current feed and passing of a sensing signal.
In this example, fig. 2 depicts the I-V curve of a resonant tunneling diode obtained by actual testing, and it can be seen from the dc curve that there are two nonlinear regions a and B and one negative resistance region.
Specifically, due to the electron energy distribution effect in the emitter of the resonant tunneling diode, the resonant tunneling of the tail electrons forms a nonlinear region a located in the initial region of the resonant tunneling current. A nonlinear region B is formed in a peak current region where the tunneling current starts to be cut off with an increase in bias voltage, and has a strong nonlinear characteristic, and the nonlinear characteristic of the region is independent of the thermal index and is mainly related to the broadening of the tunneling sub-band of the quantum well.
Specifically, the double barrier quantum well is a typical energy band structure of a resonant tunneling diode, the discrete energy level in the potential well becomes lower as the width of the potential well increases, and the tunneling probability of the double barrier quantum well has a resonant tunneling peak along with the increase of the energy of incident electrons, that is, when the energy of the incident electrons is equal to the discrete energy level in the quantum well, the tunneling probability has a peak value of about 1, and when the energy of the incident electrons deviates from the discrete energy level in the potential well, the tunneling probability is rapidly attenuated, thereby forming a negative resistance region.
In this embodiment, the communication transmit channel circuit structure includes a first bias, a resistor, a circulator, a capacitor, an inductor, a resonant tunneling diode, a matching circuit, and an I/O interface. One end of the first biaser is connected with a direct current signal, so that the resonant tunneling diode works in a negative resistance area to form a radio frequency oscillation signal; one end is connected with a modulation signal, and the modulation mode can be ASK, OOK, PAM and the like; the third end contains DC and modulation signal, which is fed into the resonance tunneling diode after passing through resistor, circulator, capacitor and inductor. In this state, the resonant tunneling diode is used as a direct modulator to modulate signals to a radio frequency band, and the signals are fed into the I/O interface to output communication signals after passing through the matching circuit.
In this embodiment, the sensing receiving channel circuit structure includes an I/O interface, a matching circuit, a resonant tunneling diode, an inductor, a capacitor, a circulator, and a second bias. One end of the second biaser is connected with a direct current signal, so that the resonant tunneling diode works in a nonlinear region A or B, and the detection and the reception of the radio frequency signal which is perceived and received are realized through the resonant tunneling diode after the radio frequency signal which is fed in through an I/O interface passes through a matching circuit; one end is connected with the circulator, and mainly isolates the direct current signal through the sensing signal after the detection of the resonant tunneling diode; and the third end sends the sensing signal to the later stage for signal processing. In the receiving path, the inductor and the capacitor form a low-pass filter which is mainly used for preventing the high-frequency carrier signal through detecting the signal.
In this embodiment, the communication and sensing adopt a time-sharing working mode, and the conversion between the sensing and communication modes is mainly realized by controlling the direct current signal of BIASTEE.
Specifically, when the resonant tunneling diode works in the sensing mode, the first biaser does not feed in a direct current signal, and the second biaser feeds in the direct current signal, so that the resonant tunneling diode works in a nonlinear region A or B and is used as a detector; when the radio frequency direct modulator works in a communication mode, the second biaser does not feed in a direct current signal, and the first biaser feeds in a direct current signal, so that the resonant tunneling diode works in a negative resistance area and is used as the radio frequency direct modulator.
As the emission time: the first biaser 1 has three ports 11, 12 and 13, wherein the port 11 is externally connected with a direct current signal, the port 12 is externally connected with a modulating signal, the port 13 is a modulating and direct current signal, and the port 13 is connected with one side of the resistor 2. The circulator 3 has three ports 31, 32, 33, wherein the port 33 is a common port for receiving and transmitting. The other side of the resistor 2 is connected with the port 31, the port 33 is connected with one side of the capacitor 4, the other side of the capacitor 4 is connected with one side of the inductor 5, the other side of the inductor 5 is connected with one side of the resonant tunneling diode 6, the other side of the resonant tunneling diode 6 is connected with one side of the matching circuit 7, and the other side of the matching circuit 7 is connected with the I/O interface 8.
As a receiving process, the I/O interface 8 is connected to one side of the matching circuit 7, the other side of the matching circuit 7 is connected to the resonant tunneling diode 6, the other side of the resonant tunneling diode 6 is connected to one side of the inductor 5, the other side of the inductor 5 is connected to one side of the capacitor 4, and the other side of the capacitor 4 is connected to the port of the circulator 33. The second biaser 9 has three ports 91, 92, 93, the circulator port 32 connects the second biaser 93, the port 91 connects the direct current signal, the interface 92 is used for outputting the perception signal.
The transmitting and receiving paths share a capacitor 4, an inductor 5, a resonant tunneling diode 6, and a matching circuit 7,I/O interface 8.
The foregoing detailed description of the embodiments of the present invention has been presented for the purposes of illustration and description, and it should be understood that the foregoing description is by way of example only and is not intended to limit the invention to the particular embodiments of the invention, but are to be construed as limiting the invention to any modification, adaptations or equivalent variations that are within the scope of the principles of the invention.
Claims (8)
1. The miniaturized radio frequency front-end circuit structure suitable for the general sense integration is characterized by comprising an I/O interface, a matching circuit, a resonant tunneling diode, an inductor, a circulator, a resistor, a first biaser and a second biaser;
the I/O interface is used for transmitting and receiving radio frequency signals;
the matching circuit is mainly used for circuit matching between the resonant tunneling diode and the I/O interface and is used for realizing maximum power transmission;
the resonant tunneling diode is used as a direct modulator to modulate the transmitted radio frequency signal, so that a communication function is realized, and the resonant tunneling diode is used as a nonlinear device to sense the received radio frequency signal, so that a sensing function is realized;
the inductor is used for adjusting the working frequency of the radio frequency front end;
the capacitor is mainly used for shorting the radio frequency signal to the ground when transmitting, reducing the radio frequency signal loss, and forming a filter with the short-circuit inductor when receiving to prevent the high frequency signal from passing through;
the circulator is used for realizing isolation of transmitting and receiving signals;
the resistor is mainly used for a communication end, inhibits low-frequency oscillation and improves the stability of a radio frequency front end;
the first bias device is used for passing the direct current feed and the modulation signal, and the second bias device is used for passing the direct current feed and the sensing signal;
the direct current signal fed into the first bias device enables the resonant tunneling diode to work in a negative resistance area, and the modulating signal modulates the radio frequency signal generated by the resonant tunneling diode to form a radio frequency modulating signal and radiate the radio frequency modulating signal through the I/O interface; the direct current signal fed into the second bias device enables the resonant tunneling diode to work in a nonlinear region, and the radio frequency signal received by the I/O interface is detected;
when the three ports of the first biaser are used for transmitting, the first port (11) is externally connected with a direct current signal, the second port (12) is externally connected with a modulation signal, the third port (13) is a modulation and direct current signal, and the third port (13) is connected with one side of the resistor (2); three ports of the circulator (3), wherein the third port (33) is a common port for receiving and transmitting; the other side of the resistor (2) is connected with a first port (31) of the circulator (3) in a side joint mode, a third port (33) of the circulator is connected with one side of the capacitor (4), the other side of the capacitor (4) is connected with one side of the inductor (5), the other side of the inductor (5) is connected with one side of the resonant tunneling diode (6), the other side of the resonant tunneling diode (6) is connected with one side of the matching circuit (7), and the other side of the matching circuit (7) is connected with the I/O interface (8);
when receiving, the I/O interface (8) is connected with one side of the matching circuit (7), the other side of the matching circuit (7) is connected with the resonant tunneling diode (6), the other side of the resonant tunneling diode (6) is connected with one side of the inductor (5), the other side of the inductor (5) is connected with one side of the capacitor (4), and the other side of the capacitor (4) is connected with the third port (33) of the circulator; the second biaser has three ports, the second port (32) of the circulator connects the third port (93) of the second biaser; the first port (91) of the second bias device is externally connected with a direct current signal, and the second port (92) is used for outputting a sensing signal.
2. The miniaturized radio frequency front-end circuit structure suitable for integrated sensing according to claim 1, wherein the I/O interface can select an on-chip integrated antenna, a horn antenna, a metamaterial antenna, a standard waveguide port or an SMA connector according to different frequency bands and application requirements.
3. The miniaturized radio frequency front-end circuit structure suitable for the integrated through sensing according to claim 1, wherein the matching circuit is realized by a microstrip line, a slot line, a coplanar line or a coplanar waveguide.
4. The miniaturized radio frequency front-end circuit structure suitable for integrated through sensing according to claim 1, wherein the inductance is realized by a short-circuit surface coplanar waveguide, a short-circuit surface microstrip line or a short-circuit surface coplanar line.
5. The miniaturized radio frequency front-end circuit structure suitable for the general sense integration according to claim 1, wherein the circulator can select a switch transmission line type based on a differential power divider and a power synthesizer or a nonreciprocal active phase shifter type according to different working frequency bands and application requirements.
6. The miniaturized radio frequency front-end circuit structure suitable for integrated sensing as set forth in claim 1, wherein the bias is implemented in an external component or integrated on-chip manner.
7. The miniaturized radio frequency front-end circuit structure suitable for integrated sensing as set forth in claim 2, wherein the on-chip integrated antenna is implemented as a slot antenna, a bow tie antenna, a microstrip antenna or a phased array antenna.
8. The miniaturized rf front-end circuit structure of claim 4, wherein the resonant tunneling diode is implemented using gallium nitride, indium phosphide, silicon or silicon germanium materials.
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| JPH09214312A (en) * | 1996-01-30 | 1997-08-15 | Nec Corp | Semiconductor integrated circuit device |
| WO2020000258A1 (en) * | 2018-06-27 | 2020-01-02 | 深圳市太赫兹科技创新研究院 | Terahertz oscillator circuit and oscillator based on resonant tunneling diode |
| CN212463154U (en) * | 2020-10-30 | 2021-02-02 | 西北大学 | Low-power consumption reflection amplifier circuit based on negative resistance characteristic of tunnel diode |
| CN112350064A (en) * | 2020-09-14 | 2021-02-09 | 中国信息通信研究院 | Non-reciprocal phased array antenna unit, antenna and control method |
-
2022
- 2022-08-01 CN CN202210916470.7A patent/CN115314067B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09214312A (en) * | 1996-01-30 | 1997-08-15 | Nec Corp | Semiconductor integrated circuit device |
| WO2020000258A1 (en) * | 2018-06-27 | 2020-01-02 | 深圳市太赫兹科技创新研究院 | Terahertz oscillator circuit and oscillator based on resonant tunneling diode |
| CN112350064A (en) * | 2020-09-14 | 2021-02-09 | 中国信息通信研究院 | Non-reciprocal phased array antenna unit, antenna and control method |
| CN212463154U (en) * | 2020-10-30 | 2021-02-02 | 西北大学 | Low-power consumption reflection amplifier circuit based on negative resistance characteristic of tunnel diode |
Non-Patent Citations (1)
| Title |
|---|
| 基于共振隧穿二极管的太赫兹通信技术进展;胡军格;;中国新通信(第15期);全文 * |
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