CN115312616A - 4H-SiC avalanche photodetector with all-plane ion implantation inclined high-resistance terminal structure - Google Patents
4H-SiC avalanche photodetector with all-plane ion implantation inclined high-resistance terminal structure Download PDFInfo
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Abstract
The invention discloses a 4H-SiC avalanche photodetector with a full-plane ion implantation inclined high-resistance terminal, wherein the terminal structure for inhibiting the edge electric field intensity of an avalanche photodetector is an ion implantation inclined high-resistance terminal. The terminal forms the inclined high-resistance terminal table board through the high-temperature photoresist backflow and ion implantation process, overcomes the defects of multiple defect states and poor reliability of a passivation layer/SiC interface of a small-angle inclined table board in the prior art of SiC APD, effectively inhibits the edge electric field aggregation effect of the SiC APD, and has simple preparation and good reliability.
Description
Technical Field
The invention belongs to the technical field of semiconductor optoelectronic devices, and particularly relates to a 4H-SiC avalanche photodetector with a full-plane ion implantation inclined high-resistance terminal structure.
Technical Field
The third generation semiconductor material represented by GaN and SiC has the advantages of large forbidden band width, high breakdown field strength, high saturated electron drift rate, excellent chemical stability, strong radiation resistance and the like, and has wide application prospect in the fields of high-frequency, high-power, radiation-resistant and high-temperature-resistant power electronics, microwave radio-frequency devices, solid-state light sources, ultraviolet detectors and the like.
Ultraviolet detection has important application in multiple fields such as military, civil, industrial and scientific research, and the like, including multiple fields such as environmental monitoring, biochemical monitoring, deep space detection, flame detection and the like. The ultraviolet detector is an essential core element in an ultraviolet detection system.
Currently, common uv photodetectors can be divided into two categories: solid-state ultraviolet detectors and vacuum optoelectronic devices. The vacuum photoelectric device has the advantages of high sensitivity and high technical maturity, but the further application of the vacuum photoelectric device is restricted by the defects of large size, high working voltage, fragility and the like, and the solid ultraviolet detector has the advantages of small size, high quantum efficiency, high reliability, easiness in integration and the like, is gradually important research content in the field of ultraviolet photoelectric detection, and makes a great breakthrough in practical application.
The semiconductor ultraviolet photoelectric detector structure mainly comprises a metal-semiconductor-metal (MSM) structure, a Schottky (Schottky) structure, a PN/PIN (Positive-negative) structure, a photoconductive structure and an Avalanche Photodetector (APD) structure. The photoelectric detector with the MSM and Schottky structures is simple in structure and preparation process, but the device is low in effective utilization area, poor in high-temperature working stability, free of gain, low in responsivity and not suitable for weak light detection; the photoelectric detector with the PN/PIN structure has the advantages of low dark current, high quantum efficiency, high-temperature working stability and the like, but the device has a complex structure, does not have gain, and cannot realize the rapid detection of weak light signals; the photoelectric detector with the photoconductive structure has the advantages of simple structure, gain and high responsivity, but the photoelectric detector with the photoconductive structure has high electric leakage, low response speed and poor stability. In some national defense or emerging scientific research fields, such as ultraviolet secret communication, corona detection, biochemical detection and fire alarm, weak ultraviolet light detection and even single photon detection need to be realized, and an ultraviolet detector is required to have single photon detection capability and simultaneously have high reliability and quick time response. The Avalanche Photodetector (APD) has the advantages of high gain and high response speed, can work in a single photon detection mode (Geiger mode), is an ideal detector for realizing weak ultraviolet signal measurement, but needs to work in high electric field strength, and the gain of the device is extremely sensitive to the internal electric field of the device and needs to accurately control the voltage at two ends of the APD.
Uv detectors that are currently commercialized on the market include Si uv detectors and GaN, siC based uv detectors. The forbidden bandwidth of Si is 1.12eV, the wave band response range covers the near infrared-visible-ultraviolet range, and the Si has strong response to visible light; and the Si material has strong absorption effect on ultraviolet, so that the quantum efficiency of the Si detector in an ultraviolet band is extremely low, a special ultraviolet enhancement type structure design is required, and the structure cannot realize a high-performance ultraviolet single photon detector, so that the current commercial Si-based avalanche photodiode cannot realize effective single photon detection in the ultraviolet band. GaN and SiC are used as third-generation semiconductor materials, have large forbidden bandwidth, do not absorb visible light and have natural material advantages in the aspect of preparing high-performance ultraviolet detectors. The SiC material growth epitaxy technology is rapidly developed, the material crystal quality is high, the defect density is low, the SiC material growth epitaxy technology is the preferred material for preparing the low-noise ultraviolet detector, the SiC ultraviolet detector realizes the commercialization of a PIN structure and a Schottky structure, the SiC-based avalanche photodetector with single photon detection capability is still in the academic research and technical attack and customs stages, and the high-reliability terminal structure is one of key technologies for inhibiting an APD edge electric field and realizing high-performance SiC-based APD.
The common 4H-SiC APD structure is mainly a pn (pin) structure, the devices need to work in a high electric field mode, the photo-generated electron-hole pairs are accelerated by utilizing a high electric field to obtain enough energy, and the photo-generated electron-hole pairs are ionized by colliding S to generate new electron-hole pairs, so that avalanche multiplication of the photo-generated electron-hole pairs is realized. Due to the physical properties of SiC materials and the restriction of a preparation process, the terminal structure of the current 4H-SiC APD mostly adopts a small-angle inclined table top (small inclined mesa), the structure uses a photoresist backflow (reflow) process and adopts an etching technology to transfer the photoresist inclined edge to the 4H-SiC material in a graphical manner, a small-angle inclined table top terminal is formed at the terminal of the 4H-SiC APD epitaxial structure, the peak electric field around the table top is inhibited, and the device is prevented from being broken down in advance under high bias voltage. Although the photoresist reflow process for fabricating the small-angle inclined mesa terminal structure is relatively mature, the structure has many problems: (1) The preparation process of the device is complex, and after the 4H-SiC material is etched, a large amount of etching damage can be formed on the etched surface, a serious leakage channel is generated, and the performance of the 4H-SiC APD is seriously influenced, so that the technologies of high-temperature oxidation, damage repair and the like are required; (2) The traditional small-angle inclined table top 4H-SiC APD passivation usually adopts thermal oxidation and passivation layer deposition technology to form passivation on the surface of the SiC APD, a large number of defect states such as O vacancies, C clusters and the like exist at the passivation layer/SiC interface, and the inclined table top can traverse the avalanche region (high field region) of the APD, so the defect state at the passivation layer/SiC interface can seriously affect the reliability of the SiC APD.
Disclosure of Invention
The invention provides a 4H-SiC avalanche photodetector with a full-plane ion implantation inclined high-resistance terminal structure, aiming at solving the defects of complex preparation process and poor reliability of a small-angle inclined table top in the prior art of SiC APDs, effectively inhibiting the edge electric field aggregation effect of the SiC APDs and improving the stability of devices.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
A4H-SiC avalanche photodetector with a full-plane ion implantation inclined high-resistance terminal structure is a PN junction (PIN) structure, and the terminal structure for inhibiting the electric field intensity at the edge of the avalanche photodetector is an ion implantation inclined high-resistance terminal structure.
As a specific implementation scheme, the cross section of the ion implantation inclined high-resistance 4H-SiC terminal is annular, and the longitudinal section of the ion implantation inclined high-resistance 4H-SiC terminal is two symmetrical trapezoids; the diameter of the inner side surface of the ion implantation inclined high-resistance 4H-SiC terminal is gradually increased from top to bottom to form an inward inclination angle smaller than 45 degrees. The dip angle refers to the angle between the inner side surface of the ion implantation inclined high-resistance 4H-SiC terminal and the horizontal plane (the surface of the upper electrode 4H-SiC ohmic contact layer). Further preferably, the inclination angle is less than 15 °.
The ion implantation inclined high-resistance terminal structure is manufactured based on a high-temperature photoresist backflow technology and an ion implantation technology.
When the ion implantation inclined high-resistance terminal structure is prepared, a high-temperature photoresist backflow technology is adopted, an active area mask is formed on the surface of a 4H-SiC epitaxial wafer based on the photoetching technology, the photoresist is baked at high temperature, the backflow characteristic of the photoresist is utilized, so that the edge of the active area mask forms an inclined edge with a wide bottom and a narrow top, the edge inclination angle is smaller than 75 degrees, and the angle is transferred to SiC in an ion implantation mode.
According to the novel 4H-SiC avalanche photodetector with the ion implantation high-resistance inclined terminal, the ion implantation technology is adopted, the depth of the ion element implanted into SiC from the edge of the active region mask with the wide lower part and the narrow upper part is deep, the amorphous high-resistance SiC characteristic is formed in the ion implantation SiC region, and the inclined high-resistance 4H-SiC terminal structure is formed around the 4H-SiC active region. As the active region and the terminal of the 4H-SiC avalanche photodetector with the structure are both made of 4H-SiC, the defect states of a large number of O vacancies, C clusters and the like at the SiO2 (SiN)/SiC interface at the edge of the table top of the traditional etched inclined table top terminal 4H-SiC APD are effectively avoided, and the reliability of the device is influenced; meanwhile, the structure can effectively expand the width of a depletion layer at the edge of an active region of an avalanche layer of the APD, effectively inhibit the edge electric field aggregation of the avalanche layer of the 4H-SiC active region and effectively overcome various problems of the existing small-angle inclined table top.
The photoresist mask has a shape with a wide bottom and a narrow top, an edge angle of less than 75 degrees, and a thickness of not less than 1 μm.
The ion-implanted SiC element includes: H. ar, al, N and/or O elements.
To further ensure device performance, the depth of ion implantation into SiC is: 0.15-5 μm, preferably 0.3-1 μm; the ion implantation width is: 0.05-500 μm, preferably 1-10 μm. The energy of ion implantation into SiC is: 10-200keV; ion implantationThe dosage of SiC is as follows: 1X 10 12 /cm 2 ～1×10 14 /cm 2 . Further preferably, the ion implantation is performed in two steps, wherein in the first step, the energy of the ion implantation into SiC is: 10-100keV; the dose of ion implanted SiC was: 1 x 10 12 /cm 2 ～5×10 14 /cm 2 (ii) a And secondly, the energy of ion implantation SiC is as follows: 100-130keV; the dose of ion implanted SiC was: 5X 10 14 /cm 2 ～2×10 15 /cm 2 。
The 4H-SiC avalanche photodetector with the ion implantation inclined high-resistance terminal structure sequentially comprises the following components from top to bottom: the ion implantation type high-resistance solar cell comprises an upper electrode 4H-SiC ohmic contact layer (p type/n type heavy doping), a 4H-SiC transition layer (p type/n type), an i type 4H-SiC avalanche layer, a lower electrode 4H-SiC ohmic contact layer (n type/p type heavy doping), a 4H-SiC substrate (n type/p type) and a lower metal contact electrode (n type/p type), wherein an upper metal contact electrode (p type/n type) is arranged on the upper electrode 4H-SiC ohmic contact layer, an ion implantation inclined high-resistance terminal is positioned on the periphery of an active region, and the upper electrode 4H-SiC ohmic contact layer at least extends to the i type 4H-SiC avalanche layer.
During preparation, a lower electrode 4H-SiC ohmic contact layer (n type/p type heavy doping), an i type 4H-SiC avalanche layer, a 4H-SiC transition layer (p type/n type) and an upper electrode 4H-SiC ohmic contact layer (p type/n type heavy doping) are sequentially deposited on a 4H-SiC substrate (n type/p type), then high-temperature photoresist backflow and ion injection are sequentially carried out to form an ion injection inclined high-resistance 4H-SiC terminal, wherein the ion injection depth is at least as far as the i type 4H-SiC avalanche layer, the deepest depth can reach the lower electrode 4H-SiC ohmic contact layer (n type/p type heavy doping), then surface passivation is carried out to form a passivation layer, and finally the passivation layer of an optical window region is removed through wet etching and an electrode layer is deposited.
The preparation technology which is not mentioned in the application refers to the preparation of the prior avalanche photodetector.
In order to meet the requirements of volume and performance of the device, the thickness of the upper electrode 4H-SiC ohmic contact layer is 0.1-0.5 mu m, the thickness of the 4H-SiC transition layer is 0.1-0.5 mu m, the thickness of the i-type 4H-SiC avalanche layer is 0.3-10 mu m, the thickness of the lower electrode 4H-SiC ohmic contact layer is 1-10 mu m, the thickness of the 4H-SiC substrate is 200-400 mu m, the thicknesses of the upper metal contact electrode and the lower metal contact electrode are both 0.1-5 mu m, and the thickness of the passivation layer is 0.5-10 mu m. The upper electrode and the lower electrode are in a single-layer or multi-layer metal composite structure, the contact metal composition of the upper electrode and the lower electrode can be the same or different, and can be a composite structure of one or more of Ti, al, ni, au and Pt metals, preferably a composite structure, and more preferably a multi-layer structure of sequentially connected Ni/Ti/Al/Au.
In order to ensure the performance of the device, the average doping concentration of the upper electrode 4H-SiC ohmic contact layer is 5 multiplied by 10 18 -2×10 19 cm -3 The average doping concentration of the 4H-SiC transition layer is 1 x 10 17 -5×10 18 cm -3 The average doping concentration of the i-type 4H-SiC avalanche layer is between 3 and 10 14 -1×10 17 cm -3 The average doping concentration of the lower electrode 4H-SiC ohmic contact layer is between 5 and 10 17 -2×10 19 cm -3 The average doping concentration of the 4H-SiC substrate is between 5 and 10 17 -2×10 19 cm -3 The passivation layer is made of at least one of silicon dioxide, silicon nitride, aluminum oxide or hafnium oxide.
The technology not mentioned in the present invention is referred to the prior art.
The 4H-SiC avalanche photodetector with the all-plane ion implantation inclined high-resistance terminal structure overcomes the defects that an inclined table terminal structure is formed by etching in the traditional 4H-SiC APD technology, the etching damage repair process is complex, and the defect states of an active area edge passivation layer/SiC interface are many, and the inclined high-resistance terminal 4H-SiC is formed by high-temperature photoresist backflow and ion implantation 4H-SiC, and the electric field concentration at the edge of the table is effectively inhibited by expanding the width of a depletion layer of an avalanche layer at the edge of the table; meanwhile, the defect that the edge passivation layer/SiC interface of the active region has a defect state naturally is eliminated, and the reliability of the 4H-SiC APD device is effectively improved; simple preparation, strong controllability and easy large-scale production.
Drawings
FIG. 1 is a block diagram of a conventional sloped mesa termination 4H-SiC APD device of comparative example 1;
fig. 2 is a schematic diagram of forming a tilted high-resistance termination structure for the all-plane ion implantation in example 1 (the upper diagram is a schematic diagram of ion implantation, and the lower diagram is a schematic diagram of a final structure);
FIG. 3 is a graph of internal field strength distribution of a conventional sloped mesa termination 4H-SiC APD device of comparative example 1, wherein the left graph is a cross-sectional two-dimensional distribution of field strength variation; the right graph is a field intensity change curve along the horizontal direction of the junction of the p layer and the i layer;
fig. 4 is a distribution diagram of the internal field strength of a 4H-SiC APD device of the all-plane ion implantation inclined high-resistance termination structure in embodiment 1, wherein the upper diagram is a two-dimensional distribution diagram of a section of carrier concentration distribution, and the lower left diagram is a two-dimensional distribution diagram of a section of field strength variation; the lower right graph is a field intensity change curve along the horizontal direction of the junction of the p layer and the i layer;
FIG. 5 is a simplified structural diagram of a full-plane ion-implantation tilted high resistance termination structure 4H-SiC APD of example 2 fabricated on a p-type SiC substrate material;
in the figure, 101 is a lower metal contact electrode, 102 is an n-type 4H-SiC conductive substrate, 103 is an n-type 4H-SiC ohmic contact layer, 104 is an i-type 4H-SiC avalanche layer, 105 p-type doped 4H-SiC transition layer, 106 is a p + -type heavily doped 4H-SiC metal contact layer, 107 is a passivation layer, 108 is an upper metal contact electrode, 109 is an inclined mesa terminal, 202 is a p-type 4H-SiC conductive substrate, 203 is a p-type SiC contact layer, 205 is an n-type SiC transition layer, 206 is an n + -type SiC ohmic contact layer, 209 is a high-temperature reflow lithography mask, and 210 is an ion-implanted SiC inclined high-resistance terminal.
Detailed Description
For better understanding of the present invention, the following examples are given for further illustration of the present invention, but the present invention is not limited to the following examples.
The terms of orientation such as up, down, top, bottom, horizontal, longitudinal, internal, external, vertical and horizontal in the application are all relative orientations or position relationships based on the drawings, and should not be construed as absolute limitations of the application.
Example 1:
as shown in fig. 2, a novel all-plane ion implantation inclined high-resistance termination structure 4H-SiC APD is prepared on an n-type 4H-SiC substrate material, and sequentially comprises from bottom to top: the lower metal contact electrode (n-type contact electrode) 101, the n-type 4H-SiC conducting substrate 102, the n-type 4H-SiC ohmic contact layer 103, the i-type 4H-SiC avalanche layer 104, the p-type doped 4H-SiC transition layer 105, the p + -type heavily doped 4H-SiC metal contact layer 106, the p-type upper metal contact electrode 108 and the ion implantation inclined high resistance 4H-SiC terminal 210 are all arranged on the p + -type heavily doped 4H-SiC metal contact layer 106, the ion implantation inclined high resistance 4H-SiC terminal 210 extends from the p + -type heavily doped 4H-SiC metal contact layer 106 into the i-type 4H-SiC avalanche layer 104, the depth is 0.4 mu m in total, the cross section of the ion implantation inclined high resistance 4H-SiC terminal is annular, and the longitudinal section is two symmetrical trapezoids; the dip angle alpha of the ion implantation inclined high-resistance 4H-SiC terminal 210 is 4 degrees, and passivation layers 107 are arranged on the p + type heavy doping 4H-SiC metal contact layer 106 except for the p type upper metal contact electrode 108.
Comparative example 1
As shown in fig. 1, a schematic structural diagram of a conventional inclined mesa termination SiC APD is prepared on an n-type 4H-SiC substrate material, and the structure sequentially includes, from bottom to top: the lower metal contact electrode (n-type contact electrode) 101, the n-type 4H-SiC conductive substrate 102, the n-type 4H-SiC ohmic contact layer 103, the i-type 4H-SiC avalanche layer 104, the p-type doped 4H-SiC transition layer 105 and the p + -type heavily doped 4H-SiC metal contact layer 106 are etched from the p + -type heavily doped 4H-SiC metal contact layer 106 to the inside of the i-type 4H-SiC avalanche layer 104 to an etching depth of 0.4 μm in total, namely, the partial height (the height of 0.1mm at the top) of the i-type 4H-SiC avalanche layer 104, the p-type doped 4H-SiC transition layer 105 (0.2 μm) and the p + -type heavily doped 4H-SiC metal contact layer 106 (0.1 μm) jointly form an inclined mesa which is tapered from bottom to top, the side of the inclined mesa is provided with a heavily doped passivation layer forming an inclined mesa terminal 109, the inclination angle of the inclined mesa terminal 109 is 4 degrees (FIG. 1 is only schematic, the inclination angle in FIG. 1 is larger than that of the p + -type heavily doped 4H-SiC metal contact layer 106), the p + -type contact layer is provided on the top of the p-type metal contact layer 106, and the p + -type contact layer 108 is provided with the p + -type 4H-SiC ohmic contact layer at the top of the p-SiC metal contact layer 106.
Fig. 2 shows a novel all-plane ion implantation inclined high-resistance termination structure 4H-SiC APD improved in the present application corresponding to the device structure of fig. 1, in which the substrate material, the lower electrode 4H-SiC ohmic contact layer, the i-type 4H-SiC avalanche layer, the doping concentration, the doping type, and the metal contact electrode of the device are the same as those of the conventional inclined mesa termination SiC APD of embodiment 1, except that: the mesa terminal of the device shown in fig. 2 is an ion implantation inclined high-resistance 4H-SiC terminal, and the terminal preparation process is also different from the structure of the device shown in fig. 1.
The device shown in fig. 2 was prepared as follows: sequentially growing on the n-type 4H-SiC conductive substrate 102: an n-type 4H-SiC ohmic contact layer 103, an i-type 4H-SiC avalanche layer 104, a p-type doped 4H-SiC transition layer 105 and a p + type heavily doped 4H-SiC metal contact layer 106, and then preparing an inclined high-resistance 4H-SiC terminal, wherein the preparation of the inclined high-resistance 4H-SiC terminal comprises the following steps: performing high-temperature reflux and ion implantation on the photoresist of the active region, performing ion implantation at the edge of the mask of the active region with a wide lower part and a narrow upper part, and forming high-resistance SiC characteristics in an ion implantation SiC region to form an inclined high-resistance 4H-SiC terminal, wherein the depth of the inclined high-resistance 4H-SiC terminal reaches the depth of an i-type 4H-SiC avalanche layer 104, and the specific processes and parameters are as follows: forming a photoresist pattern in the active region by a photolithography developing technique, baking at 260 ℃ for 10 minutes to form an ellipsoidal ion implantation mask (edge angle 70 °) with a height of 8 μm; adopting an ion implantation technology, carrying out 2 steps of ion implantation Ar on the epitaxial surface of the SiC through a selected area, wherein the implantation energy and the implantation dosage are respectively as follows: (1) 50keV, 5X 10 14 cm -2 ；(2)130keV，2×10 15 cm -2 (ii) a The ion implantation direction is vertically downward, the ion implantation depth is 0.4 mu m, the ion implantation depth reaches the i-type 4H-SiC avalanche layer 104, the width of an implantation area is 10 mu m (the width is 10 mu m in a ring shape), the implantation depth is gradually deepened from inside to outside (the direction from an inner ring to an outer ring) to form an inclination angle (an inner inclination angle alpha) of 4 degrees, the maximum depth is 4 mu m, and an inclined high-resistance 4H-SiC terminal with the inner inclination angle alpha of 4 degrees as shown in figure 2 is formed.
The preparation method of the SiC APD metal electrode and the passivation layer shown in the figures 1 and 2 comprises the following steps: surface passivation, n-type and p-type ohmic contact electrode preparation, wherein the surface passivation is formed by a PECVD mode, then the passivation layer in the optical window area is removed by wet etching, and an electrode layer is deposited. The lower metal contact electrode (back electrode metal ohmic contact layer) 101 and the upper metal contact electrode (upper electrode metal ohmic contact layer) 108 are both of a multilayer metal composite structure, are respectively deposited on the back surface of the n-type 4H-SiC conductive substrate 102 and the surface of the p + type heavily doped 4H-SiC metal contact layer 106 through evaporation or sputtering processes, and are formed through high-temperature annealing.
The device termination is clearly different when compared to the device structures of fig. 1 and 2. Because the ion implantation process has higher precision, the processing precision is higher in the preparation of the device terminal, and the control of the terminal structure size is more flexible; the terminal of the inclined table top is limited by a photoresist reflow process and an etching process window, and the angle of the inclined table top cannot be flexibly controlled. In addition, the edge of the terminal avalanche region of the traditional inclined mesa is a passivation layer/SiC interface, a large number of defect states exist, and the edge of the 4H-SiC/4H-SiC terminal avalanche region with high resistance by ion implantation is a 4H-SiC/4H-SiC interface, so that the defect states of the edge of the avalanche region are greatly reduced.
The purpose of SiC APD termination is to effectively attenuate the electric field spike around the mesa. The advantages of the novel ion implantation tilted high resistance termination 4H-SiC APDs will be further illustrated by Silvaco device simulation data.
The specific structural parameters of the devices of fig. 2 and 3 are set as follows: doping concentration of the n-type 4H-SiC conductive substrate 102 is 5X 10 18 cm -3 300 μm in thickness; doping concentration of the lower electrode n-type 4H-SiC ohmic contact layer 103 is 1X 10 19 cm -3 Doping concentration of the i-type 4H-SiC avalanche layer 104 of thickness 2 μm is 1X 10 15 cm -3 0.6 μm thick; doping concentration of the p-type 4H-SiC transition layer 105 is 5X 10 17 cm -3 0.2 μm in thickness; doping concentration of the p + -type SiC ohmic contact layer 106 was 1X 10 19 cm -3 The thickness is 0.1 μm, and the surface passivation layer 107 of the device is silicon dioxide with the thickness of 0.8 μm; the lower metal contact electrode (n-type contact electrode) 101 and the upper metal contact electrode (p-type contact electrode) 108 of the probe are both based on the metals Ni/Ti/Al/Au (35/50/200/100 nm)The multilayer structure comprises a Ni layer with the thickness of 35nm, a Ti layer with the thickness of 50nm, an Al layer with the thickness of 200nm and an Au layer with the thickness of 100nm which are sequentially connected, wherein the Au layer of the lower metal contact electrode 101 is positioned at the bottommost layer, and the Au layer of the upper metal contact electrode 108 is positioned at the topmost layer.
FIG. 3 is a graph of the internal field strength distribution of a high reverse bias down-dip mesa SiC APD (FIG. 1) calculated using Silvaco device simulation software, with the left graph showing a cross-sectional two-dimensional distribution of field strength change and the right graph showing a plot of field strength change along the horizontal direction at the p-layer to i-layer junction. The mesa etch depth was 0.4 μm and had penetrated into the i-type SiC avalanche layer 104.
From the results of the device simulation calculations: with a reverse bias voltage of 190V, the field strength maxima within the sloped mesa SiC APD device are located at the interface of the i-type SiC avalanche layer 104 and the p-type SiC transition layer 105 and near the mesa edge (left panel). From the specific distribution of the electric field intensity along the boundary line of the i-type SiC avalanche layer 104 and the p-type SiC transition layer 105 (right diagram), it can be seen that: under the condition of using the inclined angle mesa structure, the electric field peak value at the edge of the SiC APD mesa is only 0.02MV/cm higher than the internal field intensity, which shows that the mesa with a small inclined angle (the inclined angle is 4 degrees) can effectively inhibit the electric field peak at the edge of the SiC APD mesa.
FIG. 4 is a graph of the internal field strength distribution of an ion implanted tilted high resistance termination 4H-SiC APD (FIG. 2) at high reverse bias, calculated using Silvaco device simulation software, with the top graph being a cross-sectional two-dimensional distribution of carrier concentration distribution and the left graph being a cross-sectional two-dimensional distribution of field strength variation; the right graph is a field intensity change curve along the horizontal direction of the junction of the p layer and the i layer; the depth of the lower ion implantation tilt high resistance 4H-SiC is 0.4 μm, reaching deep into the i-type SiC avalanche layer 104.
From the results of the device simulation calculations: at 190V reverse bias, the maximum field strength in the ion implanted sloped high resistance termination 4H-SiC APD device is at the interface of the i-type SiC avalanche layer 104 and the p-type SiC transition layer 105 and near the mesa edge (left panel). From the specific distribution of the electric field intensity along the boundary line of the i-type SiC avalanche layer 104 and the p-type SiC transition layer 105 (right diagram), it can be seen that: under the condition that the ion implantation inclined high-resistance 4H-SiC terminal is used, the electric field peak value at the edge of the SiC APD table top is only higher than the internal field intensity by 0.01MV/cm, which shows that the ion implantation inclined high-resistance 4H-SiC terminal can also effectively inhibit the electric field peak at the edge of the SiC APD table top, and the inhibition effect of the ion implantation inclined high-resistance 4H-SiC terminal on the electric field peak at the edge of the SiC APD table top is similar to that of the inclined table top terminal.
Table 1 compares the variation of the mesa edge field strength, the maximum sustainable overload bias, and the avalanche maximum current for the tilted mesa SiC APD (FIG. 1) and the tilted high resistance 4H-SiC termination mesa SiC APD (FIG. 2).
Description of the drawings: since the device structure is symmetrical, fig. 1 shows only the right half of the device, and fig. 3 and 4 show only the right half of the device in cross section as schematic diagrams.
Example 2
FIG. 5 is a simplified structural diagram of another ion implanted inclined high termination SiC APD device fabricated on a p-type 4H-SiC conductive substrate material in accordance with the present invention. The basic components of the device include: a p-type 4H-SiC conductive substrate 202. Sequentially growing on the p-type 4H-SiC conductive substrate 202: a p-type SiC contact layer 203, an i-type SiC avalanche layer 104, an n-type SiC transition layer 205, and an n + -type SiC ohmic contact layer 206; the thickness and doping concentration of each layer are the same as those of the corresponding layer in example 1. The surface passivation layer 107, the upper contact electrode 108 and the lower contact electrode 101 are identical to the structure of fig. 2. The mesa structure of the device of fig. 5 is also identical to that of fig. 2, i.e., the mesa is an ion implanted sloped high resistance 4H-SiC termination to a depth at least into the i-type SiC avalanche layer 104.
The ion implantation inclined high-resistance terminal SiC APD device shown in FIG. 5 is identical to the ion implantation inclined high-resistance terminal SiC APD device in FIG. 2 in physical action mechanism, except that one is in an n-i-p structure from top to bottom, and the other is in a p-i-n structure from top to bottom. Due to the symmetry of the structure, the conductivity of each layer and the distribution of doping concentration, the device structure shown in fig. 5 also has the effect of suppressing the spike of the edge electric field of the APD mesa, and the corresponding conclusion is supported by the device simulation calculation result, which is not described again here.
Claims (8)
1. A4H-SiC avalanche photodetector with a full-plane ion implantation inclined high-resistance terminal is a PN junction structure and is characterized in that: the terminal structure for inhibiting the electric field intensity at the edge of the avalanche photodetector is an ion implantation inclined high-resistance 4H-SiC terminal.
2. The full-planar ion-implantation sloped high-resistance-terminated 4H-SiC avalanche photodetector of claim 1, wherein: the cross section of the ion implantation inclined high-resistance 4H-SiC terminal is annular, and the longitudinal section of the ion implantation inclined high-resistance 4H-SiC terminal is two symmetrical trapezoids; the diameter of the inner side surface of the terminal of the ion implantation inclined high resistance 4H-SiC gradually increases from top to bottom to form an inward inclination angle smaller than 45 degrees.
3. The all-in-plane ion-implanted tilted high-resistance terminated 4H-SiC avalanche photodetector according to claim 1 or 2, characterized by: the ion implantation inclined high-resistance 4H-SiC terminal is prepared based on a high-temperature photoresist backflow and ion implantation method.
4. The full-planar ion-implantation sloped high-resistance-terminated 4H-SiC avalanche photodetector of claim 3, wherein: the elements of the ion implantation include: H. ar, al, N and/or O elements; the depth of ion implantation is: 0.15-5 μm; the width of the ion implantation is: 0.05-500 μm; the energy of ion implantation into SiC is: 10-200keV; the dose of ion implanted SiC was: 1X 10 12 /cm 2 ～2×10 15 /cm 2 。
5. The full-planar ion-implantation sloped high-resistance-terminated 4H-SiC avalanche photodetector of claim 3, wherein: the shape of the photoresist mask is wide at the bottom and narrow at the top, the edge inclination angle is less than 75 degrees, and the thickness of the photoresist mask is not less than 1 μm.
6. The all-in-plane ion-implanted sloped high-resistance-terminated 4H-SiC avalanche photodetector of claim 1 or 2, wherein: comprises the following components in sequence from top to bottom: the device comprises an upper electrode 4H-SiC ohmic contact layer, a 4H-SiC transition layer, an i-type 4H-SiC avalanche layer, a lower electrode 4H-SiC ohmic contact layer, a 4H-SiC substrate and a lower metal contact electrode, wherein the upper electrode 4H-SiC ohmic contact layer is provided with an upper metal contact electrode and an ion injection inclined high-resistance 4H-SiC terminal, the upper electrode 4H-SiC ohmic contact layer is provided with a passivation layer in the region except the upper metal contact electrode, and the ion injection inclined high-resistance terminal at least extends to the i-type 4H-SiC avalanche layer from the upper electrode 4H-SiC ohmic contact layer.
7. The full-planar ion-implantation sloped high-resistance-terminated 4H-SiC avalanche photodetector of claim 6, wherein: the preparation method comprises the following steps: depositing a lower electrode 4H-SiC ohmic contact layer, an i-type 4H-SiC avalanche layer, a 4H-SiC transition layer and an upper electrode 4H-SiC ohmic contact layer on a 4H-SiC substrate in sequence; and sequentially carrying out high-temperature photoresist reflux and ion implantation to form an ion implantation inclined high-resistance 4H-SiC terminal, wherein the ion implantation depth at least reaches the i-type 4H-SiC avalanche layer and can reach the lower electrode 4H-SiC ohmic contact layer deepest, carrying out surface passivation to form a passivation layer after the ion implantation is finished, and finally preparing the upper metal contact electrode and the lower metal contact electrode.
8. The full-planar ion-implantation sloped high-resistance-terminated 4H-SiC avalanche photodetector of claim 7, wherein: the thickness of the upper electrode 4H-SiC ohmic contact layer is 0.1-0.5 mu m, the thickness of the 4H-SiC transition layer is 0.1-0.5 mu m, the thickness of the i-type 4H-SiC avalanche layer is 0.3-10 mu m, the thickness of the lower electrode 4H-SiC ohmic contact layer is 1-10 mu m, the thickness of the 4H-SiC substrate is 200-400 mu m, the thickness of the upper metal contact electrode and the thickness of the lower metal contact electrode are both 0.1-5 mu m, and the thickness of the passivation layer is 0.5-10 mu m; the average doping concentration of the upper electrode 4H-SiC ohmic contact layer is 5 multiplied by 10 18 -2×10 19 cm -3 The average doping concentration of the 4H-SiC transition layer is between 1 and 10 17 -5×10 18 cm -3 The average doping concentration of the i-type 4H-SiC avalanche layer is between 3 and 10 14 -1×10 17 cm -3 The average doping concentration of the lower electrode 4H-SiC ohmic contact layer is between 5 and 10 17 -2×10 19 cm -3 The average doping concentration of the 4H-SiC substrate is between 5 and 10 17 -2×10 19 cm -3 The passivation layer is made of at least one of silicon dioxide, silicon nitride, aluminum oxide or hafnium oxide.
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