CN115308757A - Image sensor and driving method thereof - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
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Abstract
The invention discloses an image sensor and a driving method thereof, comprising the following steps: the pixel array is composed of a two-dimensional array of a plurality of pixel units, each pixel unit comprises a modulation transistor, the grids of the modulation transistors of the pixel units in the same column in the pixel array are mutually connected and are connected to column driving signal lines of the columns, and the column driving signal lines are connected with driving signals; and the delay control module is used for controlling the driving signals of the column driving signal lines in the pixel array to enable the modulation transistors of the same column of pixel units to receive the driving signals in a time-sharing manner. Through the modulation transistor in the time-sharing drive pixel unit, the phenomenon that a plurality of pixels are simultaneously started to cause overlarge instantaneous current is avoided, and the driving capability is insufficient to enable the pixels to adjust the contrast ratio to reduce, so that the distance measurement precision of the image sensor is improved.
Description
Technical Field
The present disclosure relates to image sensors, and particularly to a three-dimensional image sensor.
Background
With the rapid development of three-dimensional imaging information technology, especially building measurement, indoor positioning and navigation, stereoscopic imaging and assisted living environment application, urgent needs are brought to Time-of-Flight (TOF) imaging, and the pixel structure of the CMOS image sensor applied to a Time-of-Flight imaging system is rapidly developed. Time of flight (TOF) is a method of finding a distance to an object by continuously transmitting light pulses to the object, receiving light returning from the object with a sensor, and detecting the Time of flight (round trip) of the light pulses.
The TOF image sensor is a two-dimensional array formed by including a pixel array, which is a plurality of pixel cells. In a general TOF sensor, a modulation signal needs to drive at least one same row of pixel circuits at the same time, which may cause the pixel circuits to generate an instantaneous large current and cause insufficient driving capability, thereby affecting the contrast of pixel tuning and reducing the ranging accuracy of the image sensor.
Disclosure of Invention
An object of the present application is to provide an image sensor to improve the distance measurement accuracy of the existing image sensor, aiming at the above-mentioned shortcomings in the prior art.
In order to achieve the above purpose, the technical solutions adopted in the embodiments of the present application are as follows:
an embodiment of the present application provides an image sensor, including: the pixel array is composed of a two-dimensional array of a plurality of pixel units, each pixel unit comprises a modulation transistor, the grids of the modulation transistors of the pixel units in the same column in the pixel array are mutually connected and are connected to column driving signal lines of the columns, and the column driving signal lines are connected with driving signals;
and the delay control module is used for controlling the driving signals of the column driving signal lines in the pixel array to enable the modulation transistors of the same column of pixel units to receive the driving signals in a time-sharing manner.
Optionally, the making the modulation transistors of the pixel units in the same column receive the driving signal in a time-sharing manner includes: the delay control module enables the modulation transistors of the pixel units in the same column to receive the driving signals at equal time intervals in sequence.
Optionally, the making the modulation transistors of the pixel units in the same column receive the driving signal in a time-sharing manner includes: and dividing the modulation transistors of the pixel units in the same column into N groups (N is more than or equal to 1), and simultaneously receiving the driving signals by the modulation transistors in the same group.
Optionally, the making the modulation transistors of the pixel units in the same column receive the driving signal in a time-sharing manner further includes: and in the N groups of transistors, different groups of modulation transistors sequentially receive the driving signals at equal time intervals.
Optionally, the making the modulation transistors of the pixel units in the same column receive the driving signal in a time-sharing manner further includes: and in the N groups of transistors, different groups of modulation transistors sequentially receive the driving signals at different time intervals.
In a second aspect, the present application provides a driving method of an image sensor, comprising: receiving a driving signal, wherein the driving signal is used for driving the grid electrodes of the modulation transistors of the pixel units in the same column of the image sensor; and delaying the driving signal, wherein the driving signal is delayed and the modulating transistors of the pixel units in the same column receive the driving signal in a time-sharing manner.
Optionally, delaying the driving signal further includes: enabling the modulation transistors of the pixel units in the same column to sequentially receive the driving signals at equal time intervals.
Optionally, delaying the driving signal further includes: dividing the modulation transistors of the pixel units in the same column into N groups (N is more than or equal to 1); the modulation transistors of the same group are made to receive the drive signal simultaneously.
Optionally, delaying the driving signal further includes: and driving the modulation transistors of different groups of the N groups of transistors to sequentially receive the driving signals at equal time intervals.
Optionally, delaying the driving signal further includes: and driving the modulation transistors of different groups of the N groups of transistors to sequentially receive the driving signals at unequal time intervals.
The beneficial effect of this application is:
an image sensor provided in an embodiment of the present application includes: the pixel array is composed of a two-dimensional array of a plurality of pixel units, each pixel unit comprises a modulation transistor, the grids of the modulation transistors of the pixel units in the same column in the pixel array are mutually connected and are connected to column driving signal lines of the columns, and the column driving signal lines are connected with driving signals;
and the delay control module is used for controlling the driving signals of the column driving signal lines in the pixel array to enable the modulation transistors of the same column of pixel units to receive the driving signals in a time-sharing manner.
Through the modulation transistor in the time-sharing drive pixel unit, the phenomenon that instantaneous current is too large and the driving capability is insufficient due to the fact that a plurality of pixels are simultaneously started is avoided, so that the contrast of the pixels is reduced, and the distance measurement precision of the image sensor is improved.
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To more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 provides a TOF ranging schematic diagram for an embodiment of the present application;
fig. 2 is a schematic diagram of an image sensor according to an embodiment of the present disclosure;
fig. 3 is a block diagram of a TOF pixel circuit according to an embodiment of the present disclosure;
FIG. 4 provides a TOF pixel circuit according to an embodiment of the present application;
FIG. 5 is a timing diagram of a TOF pixel circuit according to an embodiment of the present disclosure;
FIG. 6 provides a TOF pixel circuit according to an embodiment of the present application;
FIG. 7 is a schematic diagram of an image sensor provided in an embodiment of the present application;
fig. 8 is a timing diagram of driving signals according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
Fig. 1 is a general TOF ranging diagram, which obtains the flight time between a sensor and an object to be measured by using the phase difference between a transmitted light signal and an echo signal, and then calculates to obtain distance information. As shown, a beam of emitted light signals is emitted from a light source 101. The emitted light signal may be a laser pulse signal modulated by a pseudo-random sequence or a common laser pulse signal. The emitted optical signal is reflected by the object 102 and focused by the lens 103 on the pixels of the image sensor 104. The signals received by the image sensor are echo signals and background light signals or only background light signals, and the background light signals are assumed to be uniform within a certain time. The received signal is subjected to signal cancellation or signal extraction through a pixel circuit in the image sensor 104, a background light part is removed, a pure echo signal is obtained, and finally, the phase shift of the echo signal relative to the emitted light signal in the returned light is detected through each pixel, so that the distance of the surrounding object can be detected.
As shown in fig. 2, a general TOF image sensor includes a pixel unit 201, a pixel array 202, a row selection circuit 203, a readout circuit 204, and a signal processing module 205. The pixel array 202 is a two-dimensional array in which a plurality of pixel units 201 are arranged. The row selection circuit 203 is used to gate the pixels of a row in the pixel array 202, for example, the row selection circuit 203 gates the pixel cells of a first row, and then the signals of the pixel cells of the row are read out by the readout circuit 204, and the readout circuit 204 may be a sample-and-hold circuit. The readout circuit may be connected to the signal processing module 205, and is configured to process the readout row signal to obtain a TOF ranging result.
Fig. 3 is a block diagram of a general TOF pixel circuit, which includes a photoelectric conversion unit 310, a modulation gate 320, and a charge storage device 330. Wherein the photoelectric conversion unit 310 is configured to receive an optical signal and generate photo-generated electrons; a modulation gate 320 for controlling the transport of the photo-generated electrons; the charge storage device 330 is used to store the photo-generated electrons.
Illustratively, as shown in fig. 4, the TOF pixel circuit diagram includes a photodiode 401, a reset transistor 402, a first transfer transistor 403, a second transfer transistor 404, a first Floating Diffusion capacitor 405 (FD 1), a second Floating Diffusion capacitor 406 (FD 2), a first source follower 407, a second source follower 408, a first gate transistor 409 (Select titanium, SEL 1), and a second gate transistor 410 (Select titanium, SEL 2).
The operation of the pixel circuit is described below with reference to fig. 5.
When the gate TX1 of the first transfer transistor 403 is at a high level, the gate TX2 of the second transfer transistor 404 is at a low level, the first transfer transistor 403 is turned on, the second transfer transistor 404 is turned off, and photo-generated electrons generated in the photodiode 401 are stored on the capacitor 405 through the first transfer transistor 403;
when the gate TX1 of the first transfer transistor 403 is at a low level, the gate TX2 of the second transfer transistor 404 is at a high level, the first transfer transistor 403 is turned off, the second transfer transistor 404 is turned on, and photo-generated electrons generated in the photodiode 401 are stored on the capacitor 406 through the second transfer transistor 404;
more specifically, as shown in fig. 6, taking a two-tap pixel as an example, generally, the pixel unit further includes a photoelectric conversion unit 601, a first modulation transistor 603, and a second modulation transistor 605. The first modulation transistor 603 is connected to a first modulation signal, for example, a modulation signal having a phase of 0 °, and the second modulation transistor 603 is connected to a second modulation signal, for example, a modulation signal having a phase of 180 °.
As can be seen from the timing diagram of the transfer transistor shown in fig. 5, the capacitor 405 and the capacitor 409 store information of the reflected signals at different phases. For example, the capacitor 405 and the capacitor 409 store charge information at 0 ° and 180 ° phases of the reflected signal at this time. According to the phase difference information, the flight time can be obtained, which is not described herein.
As described above, the reset signals RST of the pixel units of each row in the pixel array are connected to form a row reset signal line; the gates PGA of the first modulation transistors 603 of the pixel cells 201 of each column are connected to form a first modulation signal line for the column, and the gates PGB of the second modulation transistors 605 of the corresponding pixel cells 201 of each column are connected to form a second modulation signal line for the column. Then, when there are too many pixel units in a column, the gate capacitances of the modulation transistors 603 and 605 of all the pixel units 201 in the column are charged simultaneously by the first modulation signal line or the second modulation signal line, and at this time, a transient large current occurs in the column, which causes the first modulation signal line or the second modulation signal line connected to the power supply voltage to pull down the power supply voltage, thereby causing the state change time from off to on of the first modulation transistor 603 and 605 to be long, and further reducing the modulation contrast of the image sensor. Therefore, the present application provides a method for preventing such a large current from being generated, and improving the modulation contrast of the image sensor.
As shown in fig. 7, a schematic diagram of an image sensor 700 provided by the present application includes a pixel array 710 and a delay control module 720. The pixel array 710 is composed of a two-dimensional array of a plurality of pixel units 711, the internal circuit of the pixel units 711 may be a pixel circuit as shown in fig. 4, gates of modulation transistors PGA of the pixel units 711 in the same column are connected to each other and connected to a first driving signal through a delay control module 720, correspondingly, gates of modulation transistors PGB of the pixel units 711 in the same column are connected to each other and connected to a second driving signal through the delay control module 720, and phases of the first driving signal and the second driving signal may be different by 180 °.
As described above, in the image sensor provided in the embodiment of the present application, the gates of the modulation transistors PGA of the pixel units in the same column are connected to the delay control module 720, and the delay control module 720 is used for delaying the driving signal.
For example, after the driving signal is input to the delay control module 720, the module outputs a delayed driving signal, which may be one signal or a plurality of signals, and this application is not limited in this respect. The plurality of delayed driving signals may be a group of driving signals with the same delay interval, or may be a plurality of groups of driving signals, where the delay of the driving signal of the same group is zero, and the delay interval between the groups is the same, which is not limited in this application. Correspondingly, the modulation transistors of the pixel units of the image sensor are sequentially turned on according to the delayed driving signals, the readout circuit of the image sensor sequentially receives and reads out the pixel data of each row and each column, and the subsequent signal processing module processes the readout data of the pixel circuits according to the delay of the driving signals.
The operation principle of the image sensor provided in the embodiment of the present application is described below with reference to fig. 8, in which the delayed driving signals are a group of driving signals with the same delay interval, and the rightmost pixel in the pixel array is taken as the first column. In fig. 7, a driving signal 1 corresponds to a gate PGA of a first modulation transistor of a first column of pixels in the pixel array, a driving signal 2 corresponds to a gate PGA of a first modulation transistor of a second column of pixels in the pixel array, and a driving signal N corresponds to a gate PGA of a first modulation transistor of an nth column of pixels in the pixel array; the other modulation gate PGB of each column of pixels is driven in the same manner as this method.
As shown in fig. 8, where the time interval between two adjacent driving signals is Δ t, the driving signals sequentially drive the gates PGA of the first modulation transistors of the pixels in the first column and the gates PGA … … of the first modulation transistors of the pixels in the second column at the interval Δ t. Δ t may be any value less than the image processing time, e.g., 1 microsecond.
When the gate PGA of the first modulation transistor of the first column of pixels in the pixel array of the image sensor receives a driving signal, the first modulation transistor is turned on or off according to the driving signal, photo-generated electrons generated in the photodiode of the pixel are stored in the first floating diffusion capacitor through the first modulation transistor, and then pass through the first source follower and the first gating transistor, and an electrical signal converted from an optical signal received by the pixel is output to the readout circuit 204 shown in fig. 2.
After the time Δ t elapses, the gate PGA of the first modulation transistor of the second row of pixels in the pixel array receives the driving signal, that is, the first modulation transistor is turned on or off according to the driving signal, and the photo-generated electrons generated in the photodiode of the pixel are stored on the first floating diffusion capacitor of the pixel through the first modulation transistor of the pixel. The electrical signal converted from the optical signal received by the pixel is then output to the readout circuit 204 as shown in fig. 2 via the first source follower and the first gating transistor.
And in analogy, after the grid PGA of the first modulation transistor of the pixel of the Nth column of pixels in the pixel array receives the driving signal, the first modulation transistor is turned on, and the photo-generated electrons generated in the photodiode of the pixel are stored on the first floating diffusion capacitor of the pixel through the first modulation transistor of the pixel. The electrical signal converted from the optical signal received by the pixel is then also output to the readout circuit 204 as shown in fig. 2 via the first source follower and the first gating transistor.
The readout circuit 204 receives the electrical signals of all the pixels in each row, performs analog-digital quantization, and outputs the pixel data in each row to the signal processing module.
According to the embodiment of the application, the modulation transistors in the pixel units are driven in a time-sharing mode, the problem that the gate capacitance charging time of the modulation transistors is too long and the modulation contrast of the image sensor is influenced due to the fact that a plurality of pixels are simultaneously started to cause overlarge current is solved.
In addition, the present application also provides a method for driving an image sensor, including: receiving a driving signal, wherein the driving signal is used for driving the grid electrodes of the modulation transistors of the pixel units in the same column of the image sensor; and delaying the driving signal, wherein the delaying is used for delaying the driving signal and enabling the modulation transistors of the pixel units in the same row to receive the driving signal in a time-sharing manner.
Illustratively, delaying the driving signal further comprises: the modulation transistors of the pixel units in the same column are enabled to receive the driving signals at equal time intervals in sequence.
Illustratively, delaying the driving signal further comprises: dividing the modulation transistors of the pixel units in the same column into N groups (N is more than or equal to 1); so that the modulation transistors of the same group receive the driving signal simultaneously.
Illustratively, delaying the driving signal further comprises: the modulation transistors driving different groups of the N groups of transistors receive the driving signal in turn at equal time intervals.
Illustratively, delaying the driving signal further comprises: the modulation transistors driving different groups of the N groups of transistors receive the driving signals in turn at unequal time intervals.
It is to be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. An image sensor, comprising:
the pixel array is composed of a two-dimensional array of a plurality of pixel units, each pixel unit comprises a modulation transistor, the grids of the modulation transistors of the pixel units in the same column in the pixel array are mutually connected and are connected to column driving signal lines of the columns, and the column driving signal lines are connected with driving signals;
and the delay control module is used for controlling the driving signals of the column driving signal lines in the pixel array to enable the modulation transistors of the same column of pixel units to receive the driving signals in a time-sharing manner.
2. The image sensor of claim 1, wherein the time-sharing the modulation transistors of the pixel units in the same column to receive the driving signal comprises:
the time delay control module enables the modulation transistors of the pixel units in the same column to sequentially receive the driving signals at equal time intervals.
3. The image sensor of claim 1, wherein said time-sharing the modulation transistors of the pixel cells of the same column to receive the driving signal comprises:
and dividing the modulation transistors of the pixel units in the same column into N groups (N is more than or equal to 1), wherein the modulation transistors in the same group receive the driving signals at the same time.
4. The image sensor of claim 3, wherein the time-sharing the modulation transistors of the same column of pixel cells to receive the drive signal further comprises:
and in the N groups of transistors, different groups of modulation transistors sequentially receive the driving signals at equal time intervals.
5. The image sensor of claim 3, wherein the causing the modulation transistors of the same column of pixel cells to receive the driving signal in a time-sharing manner further comprises:
and in the N groups of transistors, different groups of modulation transistors sequentially receive the driving signals at different time intervals.
6. A method of driving an image sensor, comprising:
receiving a driving signal, wherein the driving signal is used for driving the grid electrodes of the modulation transistors of the pixel units in the same column of the image sensor;
and delaying the driving signal, wherein the driving signal is delayed and the modulating transistors of the pixel units in the same column receive the driving signal in a time-sharing manner.
7. The driving method of claim 6, wherein delaying the driving signal further comprises:
and enabling the modulation transistors of the pixel units in the same column to receive the driving signals at equal time intervals in sequence.
8. The image sensor of claim 6, wherein delaying the drive signal further comprises:
dividing the modulation transistors of the pixel units in the same column into N groups (N is more than or equal to 1);
the modulation transistors of the same group are made to receive the drive signal simultaneously.
9. The image sensor of claim 8, wherein delaying the drive signal further comprises:
and driving the modulation transistors of different groups of the N groups of transistors to sequentially receive the driving signals at equal time intervals.
10. The image sensor of claim 8, wherein delaying the drive signal further comprises:
and driving the modulation transistors of different groups of the N groups of transistors to sequentially receive the driving signals at unequal time intervals.
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