CN115307435A - Method and device for heating silicon rod by using waste heat energy - Google Patents

Method and device for heating silicon rod by using waste heat energy Download PDF

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Publication number
CN115307435A
CN115307435A CN202210937898.XA CN202210937898A CN115307435A CN 115307435 A CN115307435 A CN 115307435A CN 202210937898 A CN202210937898 A CN 202210937898A CN 115307435 A CN115307435 A CN 115307435A
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heating
silicon rod
heated
temperature
parameters
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CN115307435B (en
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徐志群
周禹
付明全
孙小勇
孙彬
郭翔
薄千顷
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Guangdong Jinwan Gaojing Solar Energy Technology Co ltd
Guangdong Gaojing Solar Energy Technology Co Ltd
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Guangdong Jinwan Gaojing Solar Energy Technology Co ltd
Guangdong Gaojing Solar Energy Technology Co Ltd
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00—Arrangement of elements for electric heating in or on furnaces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D21/00—Arrangements of monitoring devices; Arrangements of safety devices
    • F27D21/0014—Devices for monitoring temperature
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D21/0001—Recuperative heat exchangers
    • F28D21/0014—Recuperative heat exchangers the heat being recuperated from waste air or from vapors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0056—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for ovens or furnaces

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention discloses a method and a device for heating a silicon rod by using waste heat energy, wherein the method comprises the following steps: conveying the silicon rod to be heated to a heating box, and detecting the temperature of the silicon rod to be heated in real time; obtaining silicon rod parameters of a silicon rod to be heated, pipeline parameters of a waste heat energy input pipeline and heating box parameters of a heating box; calculating the heating quantity and the heating time required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated and the preset target temperature; and adjusting the air inflow of the waste heat energy input pipeline and the state of the electric heating device according to the heating heat quantity and the heating time so as to heat the silicon rod to be heated until the silicon rod is heated to the target temperature. According to the invention, the heating time and the ex-warehouse temperature of the silicon rod can be accurately controlled by detecting the temperature of the silicon rod in real time and calculating the heating quantity and the heating time, and the silicon rod is heated by using waste heat energy generated in a workshop, so that the energy consumption can be effectively reduced.

Description

Method and device for heating silicon rod by using waste heat energy
Technical Field
The invention relates to the technical field of silicon rod heating, in particular to a method and a device for heating a silicon rod by using waste heat energy.
Background
In the processing process of the solar cell, stick sticking processing needs to be carried out on the silicon rod before slicing, and the stick sticking has higher requirement on the temperature of the silicon rod. If the temperature of the silicon rod is less than or equal to 18 ℃, the silicon rod generates a water film due to overlarge temperature difference, so that the condition of unfirm viscose glue and rod falling can be caused. If the temperature of the silicon rod is more than or equal to 18 ℃ and less than or equal to 22 ℃, when the silicon rod is bonded with the colloid, the operation effect in a subsequent tool is poor due to the poor liquidity of the colloid, the glue solution cannot overflow when the weight is pressed, the glue layer becomes thick, and the curing time is prolonged. If the temperature of the silicon rod is more than or equal to 30 ℃, the glue solution is cured too early, the flowability of the glue solution is deteriorated to cause empty glue, the operation effect in the subsequent tool is poor, the glue solution cannot overflow when the balance weight is pressed, the curing time is prolonged, and jumper wires and even broken wires are easily caused when slicing is performed, so that the slicing quality is influenced.
In the prior art, when a silicon rod is heated, the silicon rod is generally transported into a heating box and heated by an electric heating mode. The warehousing temperature of the silicon rods is not detected before heating, and the ex-warehouse temperature is manually detected when the silicon rods are ex-warehouse, so that the heating time is not controlled, the ex-warehouse temperature of the silicon rods is inaccurate, the circulation efficiency of the silicon rods is low, and the sticking effect is poor. In addition, the heating heat source mainly adopts an electric heating mode, so that the energy consumption is large.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method and a device for heating silicon rods by using waste heat energy, which can accurately control the heating time and the ex-warehouse temperature of the silicon rods, thereby improving the circulation efficiency of the silicon rods and improving the rod sticking effect; on the other hand, the heating mode of the silicon rod is improved, and the energy consumption is effectively reduced.
In order to achieve the above object, an embodiment of the present invention provides a method for heating a silicon rod by using waste heat energy, including:
conveying a silicon rod to be heated to a heating box, and detecting the temperature of the silicon rod to be heated in real time;
obtaining silicon rod parameters of the silicon rod to be heated, pipeline parameters of a waste heat energy input pipeline and heating box parameters of the heating box;
calculating the heating quantity and the heating time required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated and the preset target temperature;
and adjusting the air inflow of the waste heat energy input pipeline and the state of an electric heating device in the heating box according to the heating heat quantity and the heating time so as to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature.
As an improvement of the above scheme, the silicon rod parameters at least comprise the volume, the density, the specific heat capacity, the thermal conductivity and the contact area of the silicon rod and air;
the pipeline parameters at least comprise the sectional area, the length, the inner diameter, the outer diameter, the density, the specific heat capacity, the heat conductivity coefficient of the pipeline and the flow rate of mixed gas in the pipeline;
the heating box parameters at least comprise the temperature of the mixed gas of the heating box air inlet pipeline, the temperature of the mixed gas of the heating box air outlet pipeline and the volume of the air in the heating box.
As an improvement of the above scheme, the calculating, according to the silicon rod parameter, the pipeline parameter, the heating box parameter, the initial temperature of the silicon rod to be heated, and a preset target temperature, a heating amount and a heating time required for heating the silicon rod to be heated to the target temperature includes:
calculating the heating quantity Q required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the initial temperature of the silicon rod to be heated and the preset target temperature Silicon ：
Q Silicon ＝ρ 1 v 1 C 1 (T n -T 0 )；
Where ρ is 1 Is the density, v, of the silicon rod 1 Is the volume of the silicon rod, C 1 Is the specific heat capacity, T, of the silicon rod n Is a preset target temperature, T 0 The initial temperature of the silicon rod to be heated;
calculating an ideal heat exchange speed and an effective heat exchange speed of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and a preset target temperature;
and judging the magnitude relation between the effective heat exchange speed and the ideal heat exchange speed, and calculating the heating time required for heating the silicon rod to be heated to the target temperature according to the judgment result.
As an improvement of the above scheme, the calculating an ideal heat exchange speed and an effective heat exchange speed of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and a preset target temperature specifically includes:
calculating the ideal heat exchange speed V of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and the preset target temperature 0 ：
V 0 ＝S 1 K 1 (T 2 +ΔT 1 -ΔT 2 -T n )；
Wherein S is 1 The contact area of the silicon rod with air, K 1 Is the thermal conductivity, T, of the silicon rod 2 Is the temperature, T, of the mixed gas in the outlet pipeline of the heating box n To a preset target temperature, Δ T 1 Is the temperature rise of the pipe per unit time, delta T 2 A temperature difference that reduces the temperature of the pipeline due to the heat lost when the pipeline is heated;
calculating the effective heat exchange speed V of the silicon rod to be heated and hot air according to the pipeline parameters and the heating box parameters 1 ：
V 1 ＝(ρ 3 V 3 C 3 +ρ 4 V 4 C 4 )×L 1 ×v 0 ×S 2 ×(T 1 -T 2 )×η 1 η 2 η 3 η 4 ；
Wherein ρ 3 Is the density of air, V 3 Is the volume of air in the mixture, C 3 Is the specific heat capacity of air, ρ 4 Is the density of water vapor, V 4 Is the volume of water vapor in the mixture, C 4 Is the specific heat capacity of water vapor, L 1 Is the length of the pipe, v 0 Is the flow velocity of the mixed gas in the pipe, S 2 Is the cross-sectional area of the pipe, T 1 For heating the temperature of the gas mixture in the inlet duct of the tank, eta 1 Is the heat exchange rate of the mixed gas and the pipeline eta 2 Is the heat exchange rate, eta, of the air in the heating box 3 Is the heat exchange rate, eta, of the air in the heating box and the silicon rod 4 Is a heat transfer loss of the hot air.
As an improvement of the above scheme, the temperature rise delta T of the pipeline per unit time 1 The calculation formula of (2) is as follows:
Figure BDA0003784385220000031
wherein r is 1 Is the outer diameter of the pipe, r 2 Is the internal diameter of the pipe, p 2 Is the density of the pipe, C 2 Is the specific heat capacity of the pipeline;
temperature difference of pipeline reduced by heat lost during pipeline heatingΔT 2 The calculation formula of (c) is:
Figure BDA0003784385220000041
wherein, K 2 Is the thermal conductivity of the pipe.
As an improvement of the above scheme, the calculating, according to the determination result, the heating time required for heating the silicon rod to be heated to the target temperature specifically includes:
if the effective heat exchange speed is less than the ideal heat exchange speed, calculating first heating time t required for heating the silicon rod to be heated from the initial temperature to an intermediate temperature according to the heating quantity and the effective heat exchange speed 1 ：
Figure BDA0003784385220000042
Wherein, Q' Silicon A first heating heat, T, required for heating the silicon rod from the initial temperature to an intermediate temperature z Is an intermediate temperature;
calculating a second heating time t required for heating the silicon rod to be heated from the intermediate temperature to the target temperature according to the heating heat quantity, the effective heat exchange speed and the heat exchange speed of the electric heating device 2 ：
Figure BDA0003784385220000043
Wherein, Q ″ Silicon A second heating heat, V, required for heating the silicon rod from the intermediate temperature to the target temperature 2 U is the voltage of the heating wire in the electric heating device, R is the resistance of the heating wire, μ is the resistivity of the heating wire, L is the heat exchange rate of the electric heating device 2 Length of heating wire, η 5 The heat conversion efficiency of the heating wire;
the first heating time t 1 And the second heatingTime t 2 And adding to obtain the heating time required for heating the silicon rod to be heated to the target temperature.
As an improvement of the above scheme, the calculating, according to the determination result, the heating time required for heating the silicon rod to be heated to the target temperature specifically includes:
if the effective heat exchange speed is greater than the ideal heat exchange speed, calculating a third heating time t required for heating the silicon rod to be heated from the initial temperature to an intermediate temperature according to the heating quantity and the ideal heat exchange speed 3 ：
Figure BDA0003784385220000051
Calculating a fourth heating time t required for heating the silicon rod to be heated from the intermediate temperature to the target temperature according to the heating heat quantity, the ideal heat exchange speed and the heat exchange speed of the electric heating device 4 ：
Figure BDA0003784385220000052
The third heating time t 3 And the fourth heating time t 4 And adding to obtain the heating time required for heating the silicon rod to be heated to the target temperature.
As an improvement of the above scheme, the adjusting the air inflow of the waste heat energy input pipeline and the state of the electric heating device in the heating box to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature is detected specifically includes:
adjusting the air inflow of the waste heat energy input pipeline to the maximum, and heating the silicon rod to be heated for a first heating time by using waste heat energy;
starting the electric heating device, simultaneously heating the silicon rod to be heated for a second heating time by using waste heat energy and the electric heating device until the silicon rod to be heated is detected to be heated to the target temperature, and sending a delivery signal;
alternatively, the first and second electrodes may be,
adjusting the air inflow of the waste heat energy input pipeline to the maximum, and heating the silicon rod to be heated for a third heating time by using waste heat energy;
and starting the electric heating device, simultaneously heating the silicon rod to be heated for fourth heating time by using waste heat energy and the electric heating device until the silicon rod to be heated is detected to be heated to the target temperature, and sending a delivery signal.
The embodiment of the invention also provides a device for heating the silicon rod by using the waste heat energy, which comprises a heating box, a waste heat energy input pipeline, an electric heating device and a temperature control module;
a temperature sensor is arranged in the heating box and used for detecting the temperature of the silicon rod to be heated in real time; the electric heating device is arranged in the heating box;
the first end of the waste heat energy input pipeline is connected with a waste heat source, the second end of the waste heat energy input pipeline is connected with an air inlet valve, the air inlet valve is connected with the heating box, and the waste heat energy input pipeline is used for conveying waste heat energy from the waste heat source so as to heat the silicon rod to be heated;
the temperature control module respectively with the heating cabinet the admission valve of useless heat energy input pipeline and electric heater unit connects, just the temperature control module is used for:
obtaining silicon rod parameters of the silicon rod to be heated, pipeline parameters of the waste heat energy input pipeline and heating box parameters of the heating box;
calculating the heating quantity and the heating time required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated and the preset target temperature;
and adjusting the air inflow of the waste heat energy input pipeline and the state of an electric heating device in the heating box according to the heating heat quantity and the heating time so as to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature.
The embodiment of the invention also provides a device for heating silicon rods by using waste heat energy, which comprises a processor, a memory and a computer program stored in the memory and configured to be executed by the processor, wherein the processor executes the computer program to realize any one of the above methods for heating silicon rods by using waste heat energy.
Compared with the prior art, the method and the device for heating the silicon rod by using waste heat energy provided by the embodiment of the invention have the beneficial effects that: conveying a silicon rod to be heated to a heating box, and detecting the temperature of the silicon rod to be heated in real time; obtaining silicon rod parameters of the silicon rod to be heated, pipeline parameters of a waste heat energy input pipeline and heating box parameters of the heating box; calculating the heating quantity and the heating time required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated and the preset target temperature; and adjusting the air inflow of the waste heat energy input pipeline and the state of an electric heating device in the heating box according to the heating heat quantity and the heating time so as to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature. According to the embodiment of the invention, the heating time and the ex-warehouse temperature of the silicon rod can be accurately controlled by detecting the temperature of the silicon rod in real time and calculating the heating heat and the heating time, and the silicon rod is heated by using waste heat energy generated in a workshop, so that the energy consumption can be effectively reduced.
Drawings
Fig. 1 is a schematic flow chart of a preferred embodiment of a method for heating a silicon rod by using waste heat energy according to the present invention;
FIG. 2 is a schematic structural diagram illustrating an embodiment of an apparatus for heating a silicon rod using waste heat energy according to the present invention;
FIG. 3 is a schematic configuration view illustrating another preferred embodiment of an apparatus for heating a silicon rod using waste heat energy according to the present invention;
wherein the reference numbers are as follows:
1. a heating box; 11. a temperature sensor; 2. a waste heat energy input pipeline; 21. a waste heat source; 22. an intake valve; 3. an electric heating device; 4. a temperature control module; 5. silicon rods to be heated; 6. and (7) an insulating layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating a method for heating a silicon rod by using waste heat energy according to a preferred embodiment of the present invention. The method for heating the silicon rod by using waste heat energy comprises the following steps:
s1, transporting a silicon rod to be heated to a heating box, and detecting the temperature of the silicon rod to be heated in real time;
s2, obtaining silicon rod parameters of the silicon rod to be heated, pipeline parameters of a waste heat energy input pipeline and heating box parameters of the heating box;
s3, calculating the heating quantity and the heating time required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated and a preset target temperature;
and S4, adjusting the air inflow of the waste heat energy input pipeline and the state of an electric heating device in the heating box according to the heating heat quantity and the heating time so as to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature.
Specifically, in the embodiment, the silicon rod to be heated is transported to the heating box through the trolley, and the temperature of the silicon rod to be heated is detected in real time by using the temperature sensor. And then, obtaining silicon rod parameters of the silicon rod to be heated, pipeline parameters of the waste heat energy input pipeline and heating box parameters of the heating box. Secondly, according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated and the preset target temperature, the heating quantity and the heating time required for heating the silicon rod to be heated from the initial temperature to the target temperature are calculated. And finally, adjusting the air inflow of the waste heat energy input pipeline and the state of the electric heating device in the heating box according to the heating heat quantity and the heating time so as to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature. In this embodiment, the source of the waste heat energy may be waste heat energy generated by a cleaning machine in a workshop cleaning process, and the waste heat energy is input into the heating box through the waste heat energy input pipeline to heat the silicon rod to be heated.
According to the embodiment, the heating time and the ex-warehouse temperature of the silicon rod can be accurately controlled by detecting the temperature of the silicon rod in real time and calculating the heating heat and the heating time, so that the effect of the silicon rod is effectively improved; when the ex-warehouse temperature of the silicon rods reaches the target temperature, the silicon rods are taken out of the warehouse in time, so that the transfer efficiency of the silicon rods is effectively improved; and moreover, the silicon rod is heated by utilizing waste heat energy generated in a workshop, so that the energy consumption can be effectively reduced.
In another preferred embodiment, the silicon rod parameters comprise at least the volume, density, specific heat capacity, thermal conductivity and contact area of the silicon rod with air;
the pipeline parameters at least comprise the sectional area, the length, the inner diameter, the outer diameter, the density, the specific heat capacity, the heat conductivity coefficient of the pipeline and the flow rate of mixed gas in the pipeline;
the heating box parameters at least comprise the temperature of the mixed gas of the heating box air inlet pipeline, the temperature of the mixed gas of the heating box air outlet pipeline and the volume of the air in the heating box.
Specifically, the present embodiment fully considers the heat loss of the waste heat energy recovered from the waste heat source through pipeline transportation and the influence of other heat losses on the heating heat, and therefore, the parameters of the silicon rod to be obtained at least include the volume, density, specific heat capacity, thermal conductivity of the silicon rod, and the contact area between the silicon rod and the air; the pipeline parameters at least comprise the sectional area, the length, the inner diameter, the outer diameter, the density, the specific heat capacity, the heat conductivity coefficient and the flow velocity of mixed gas in the pipeline; the parameters of the heating box at least comprise the temperature of the mixed gas of the air inlet pipeline of the heating box, the temperature of the mixed gas of the air outlet pipeline of the heating box and the volume of the air in the heating box.
In another preferred embodiment, the calculating the heating quantity and the heating time required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated, and a preset target temperature specifically includes:
calculating the heating quantity Q required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the initial temperature of the silicon rod to be heated and the preset target temperature Silicon ：
Q Silicon ＝ρ 1 v 1 C 1 (T n -T 0 )；
Where ρ is 1 Is the density, v, of the silicon rod 1 Is the volume of the silicon rod, C 1 Is the specific heat capacity, T, of the silicon rod n Is a preset target temperature, T 0 The initial temperature of the silicon rod to be heated;
calculating an ideal heat exchange speed and an effective heat exchange speed of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and a preset target temperature;
and judging the magnitude relation between the effective heat exchange speed and the ideal heat exchange speed, and calculating the heating time required for heating the silicon rod to be heated to the target temperature according to the judgment result.
Specifically, since the total amount of air in the heating box is not lost, but only the loss through the heating box wall, the silicon rod trolley and the like is generated in the process of heating the silicon rod, when the air heated by the heating pipe is used for heating the silicon rod in an ideal state, the heating heat quantity Q required by the silicon rod for raising the temperature from the initial temperature to the target temperature is generated Silicon Comprises the following steps:
Q silicon ＝ρ 1 v 1 C 1 (T n -T 0 )；
Where ρ is 1 Is the density, v, of the silicon rod 1 Is the volume of the silicon rod, C 1 Is the specific heat capacity, T, of the silicon rod n Is a preset target temperature, T 0 Is the initial temperature of the silicon rod to be heated.
Since there are heat loss transferred from the mixture gas to the tube, heat loss transferred from the tube to the air, and heat loss transferred from the air to the silicon rod when the silicon rod is exchanged with the hot air, it is necessary to calculate an effective heat exchange rate for removing the heat loss and an ideal heat exchange rate assuming that the heat loss does not exist. And then judging the magnitude relation between the effective heat exchange speed and the ideal heat exchange speed, and calculating the heating time required for heating the silicon rod to be heated to the target temperature according to the judgment result.
As a preferred scheme, the calculating an ideal heat exchange speed and an effective heat exchange speed of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and a preset target temperature specifically includes:
calculating the ideal heat exchange speed V of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and the preset target temperature 0 ：
V 0 ＝S 1 K 1 (T 2 +ΔT 1 -ΔT 2 -T n )；
Wherein S is 1 The contact area of the silicon rod with air, K 1 Is the thermal conductivity coefficient, T, of the silicon rod 2 Is the temperature, T, of the mixed gas in the outlet pipeline of the heating box n To a preset target temperature, Δ T 1 Is the temperature rise of the pipe per unit time, delta T 2 A temperature difference that reduces the temperature of the pipeline due to the lost heat when the pipeline is heated;
calculating the effective heat exchange speed V of the silicon rod to be heated and hot air according to the pipeline parameters and the heating box parameters 1 ：
V 1 ＝(ρ 3 V 3 C 3 +ρ 4 V 4 C 4 )×L 1 ×v 0 ×S 2 ×(T 1 -T 2 )×η 1 η 2 η 3 η 4 ；
Where ρ is 3 Is the density of air, V 3 Is the volume of air in the mixture, C 3 Is the specific heat capacity of air, ρ 4 Is the density of water vapor, V 4 Is the volume of water vapour in the mixture, C 4 Is the specific heat capacity of water vapor, L 1 Is the length of the pipe, v 0 Is the flow rate of the mixed gas in the pipeline, S 2 Is the cross-sectional area of the pipe, T 1 For heating the temperature of the gas mixture in the inlet duct of the tank, eta 1 Is the heat exchange rate of the mixed gas and the pipeline eta 2 Is the heat exchange rate, eta, of the air in the heating box 3 Is the heat exchange rate, eta, of the air in the heating box and the silicon rod 4 Is a heat transfer loss of the hot air.
Specifically, according to the silicon rod parameters, the pipeline parameters, the heating box parameters and the preset target temperature, the ideal heat exchange speed V of the silicon rod to be heated and the hot air is calculated 0 ：
V 0 ＝S 1 K 1 (T 2 +ΔT 1 -ΔT 2 -T n )；
Wherein S is 1 The contact area of the silicon rod with air, K 1 Is the thermal conductivity, T, of the silicon rod 2 Is the temperature, T, of the mixed gas in the gas outlet pipeline of the heating box n To a preset target temperature, Δ T 1 Is the temperature rise of the pipe per unit time, delta T 2 A temperature difference that reduces the temperature of the pipeline due to the lost heat when the pipeline is heated;
calculating the effective heat exchange speed V of the silicon rod to be heated and the hot air according to the parameters of the pipeline and the parameters of the heating box 1 ：
V 1 ＝(ρ 3 V 3 C 3 +ρ 4 V 4 C 4 )×L 1 ×v 0 ×S 2 ×(T 1 -T 2 )×η 1 η 2 η 3 η 4 ；
Where ρ is 3 Is the density of air, V 3 Is the volume of air in the mixture, C 3 Is the specific heat capacity of air, ρ 4 Is the density of water vapor, V 4 Is the volume of water vapour in the mixture, C 4 Is the specific heat capacity of water vapor, L 1 Is the length of the pipe, v 0 Is the flow velocity of the mixed gas in the pipe, S 2 Is the cross-sectional area of the pipe, T 1 For heating the temperature of the gas mixture in the inlet duct of the tank, eta 1 Is the heat exchange rate of the mixed gas with the pipeline, eta 2 Is the heat exchange rate, eta, of the air in the heating box 3 Is the heat exchange rate, eta, of the air in the heating box and the silicon rod 4 Is a heat transfer loss of the hot air.
Preferably, the temperature rise of the pipeline per unit time is delta T 1 The calculation formula of (2) is as follows:
Figure BDA0003784385220000111
wherein r is 1 Is the outer diameter of the pipe, r 2 Is the internal diameter of the pipe, p 2 Is the density of the pipe, C 2 Is the specific heat capacity of the pipeline;
temperature difference delta T of pipeline reduced by heat lost in pipeline heating 2 The calculation formula of (2) is as follows:
Figure BDA0003784385220000121
wherein, K 2 Is the thermal conductivity of the pipe.
In another preferred embodiment, the calculating, according to the determination result, the heating time required for heating the silicon rod to be heated to the target temperature specifically includes:
if the effective heat exchange speed is smaller than the ideal heat exchange speed, calculating first heating time t required for heating the silicon rod to be heated from the initial temperature to an intermediate temperature according to the heating heat quantity and the effective heat exchange speed 1 ：
Figure BDA0003784385220000122
Wherein, Q' Silicon A first heating heat, T, required for heating the silicon rod from the starting temperature to the intermediate temperature z Is an intermediate temperature;
calculating a second heating time t required for heating the silicon rod to be heated from the intermediate temperature to the target temperature according to the heating quantity, the effective heat exchange speed and the heat exchange speed of the electric heating device 2 ：
Figure BDA0003784385220000123
Wherein, Q ″) Silicon A second heating heat, V, required for heating the silicon rod from the intermediate temperature to the target temperature 2 U is the voltage of the heating wire in the electric heating device, R is the resistance of the heating wire, μ is the resistivity of the heating wire, L is the heat exchange rate of the electric heating device 2 Length of heating wire, η 5 The heat conversion efficiency of the heating wire;
the first heating time t 1 And the second heating time t 2 And adding to obtain the heating time required for heating the silicon rod to be heated to the target temperature.
Specifically, the silicon rod to be heated is divided into two stages when being heated, the first stage is to heat the silicon rod to be heated only by using waste heat energy, at the moment, the air inflow of an air inlet valve in a waste heat energy input pipeline is adjusted to be maximum, and the silicon rod to be heated is heated from the initial temperature to the intermediate temperature; and in the second stage, the waste heat energy and the electric heating device are utilized to simultaneously heat the silicon rod to be heated, and the silicon rod to be heated is heated from the intermediate temperature to the target temperature. Therefore, if the effective heat exchange speed is less than the ideal heat exchange speed, the first heating time t required for heating the silicon rod to be heated from the initial temperature to the intermediate temperature is calculated according to the heating quantity and the effective heat exchange speed 1 ：
Figure BDA0003784385220000131
Wherein, Q' Silicon A first heating heat, T, required for heating the silicon rod from the initial temperature to an intermediate temperature z Is an intermediate temperature;
then, according to the heating heat quantity, the effective heat exchange speed and the heat exchange speed of the electric heating device, calculating a second heating time t required for heating the silicon rod to be heated from the intermediate temperature to the target temperature 2 ：
Figure BDA0003784385220000132
Wherein, Q ″) Silicon A second heating heat, V, required for heating the silicon rod from the intermediate temperature to the target temperature 2 U is the voltage of the heating wire in the electric heating device, R is the resistance of the heating wire, μ is the resistivity of the heating wire, L is the heat exchange rate of the electric heating device 2 Length of heating wire, η 5 The heat conversion efficiency of the heating wire;
finally, the first heating time t 1 And a second heating time t 2 And adding the above components to obtain the heating time required for heating the silicon rod to be heated to the target temperature.
In another preferred embodiment, the calculating, according to the determination result, the heating time required for heating the silicon rod to be heated to the target temperature specifically includes:
if the effective heat exchange speed is greater than the ideal heat exchange speed, calculating third heating time t required for heating the silicon rod to be heated from the initial temperature to the intermediate temperature according to the heating heat quantity and the ideal heat exchange speed 3 ：
Figure BDA0003784385220000141
According to the heating heat quantity, the ideal heat exchange speed and theCalculating the heat exchange speed of the electric heating device, and calculating the fourth heating time t required for heating the silicon rod to be heated from the intermediate temperature to the target temperature 4 ：
Figure BDA0003784385220000142
The third heating time t 3 And the fourth heating time t 4 And adding to obtain the heating time required for heating the silicon rod to be heated to the target temperature.
Specifically, in the embodiment, the silicon rod to be heated is heated in two stages, in the first stage, the silicon rod to be heated is heated only by using waste heat energy, at this time, the air inflow of an air inlet valve in a waste heat energy input pipeline is adjusted to be maximum, and the silicon rod to be heated is heated from an initial temperature to an intermediate temperature; and in the second stage, the waste heat energy and the electric heating device are utilized to simultaneously heat the silicon rod to be heated, and the silicon rod to be heated is heated from the intermediate temperature to the target temperature. Therefore, if the effective heat exchange speed is greater than the ideal heat exchange speed, the third heating time t required for heating the silicon rod to be heated from the initial temperature to the intermediate temperature is calculated according to the heating quantity and the ideal heat exchange speed 3 ：
Figure BDA0003784385220000143
Then, according to the heating heat quantity, the ideal heat exchange speed and the heat exchange speed of the electric heating device, calculating the fourth heating time t required for heating the silicon rod to be heated from the intermediate temperature to the target temperature 4 ：
Figure BDA0003784385220000144
Finally, the third heating time t 3 And a fourth heating time t 4 And adding the above steps to obtain the heating time required for heating the silicon rod to be heated to the target temperature.
In another preferred embodiment, the adjusting the air intake amount of the waste heat energy input pipeline and the state of the electric heating device in the heating box to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature is detected specifically includes:
adjusting the air inflow of the waste heat energy input pipeline to the maximum, and heating the silicon rod to be heated for a first heating time by using waste heat energy;
starting the electric heating device, simultaneously heating the silicon rod to be heated for a second heating time by using waste heat energy and the electric heating device until the silicon rod to be heated is detected to be heated to the target temperature, and sending a delivery signal;
alternatively, the first and second liquid crystal display panels may be,
adjusting the air inflow of the waste heat energy input pipeline to the maximum, and heating the silicon rod to be heated for a third heating time by using waste heat energy;
and starting the electric heating device, simultaneously heating the silicon rod to be heated for a fourth heating time by using waste heat energy and the electric heating device until the silicon rod to be heated is detected to be heated to the target temperature, and sending a delivery signal.
Specifically, in the embodiment, the heating of the silicon rod to be heated is divided into two stages, in the first stage, the silicon rod to be heated is heated for the first heating time or the third heating time only by using waste heat energy, and the silicon rod to be heated is heated from the initial temperature to the intermediate temperature; and in the second stage, the waste heat energy and the electric heating device are utilized to simultaneously heat the silicon rod to be heated for a second heating time or a fourth heating time, the silicon rod to be heated is heated to a target temperature from the intermediate temperature, and after the ex-warehouse temperature of the silicon rod reaches the target temperature, an ex-warehouse signal is sent out, so that the silicon rod is timely ex-warehouse, and the circulation efficiency of the silicon rod is improved. Meanwhile, the electric heating device stops heating, the air inflow of an air inlet valve in the waste heat energy input pipeline is adjusted to be small, heat preservation is carried out by using the waste heat energy, a next silicon rod to be heated enters the heating box, and the steps are repeated. When heating is not needed, an air inlet valve of the waste heat energy input pipeline is closed.
Referring to fig. 2, fig. 2 is a schematic structural view illustrating a preferred embodiment of an apparatus for heating a silicon rod using waste heat energy according to the present invention. The device for heating the silicon rod by using the waste heat energy comprises a heating box 1, a waste heat energy input pipeline 2, an electric heating device 3 and a temperature control module 4;
a temperature sensor 11 is arranged in the heating box 1 and used for detecting the temperature of the silicon rod 5 to be heated in real time; the electric heating device 3 is arranged inside the heating box 1;
the first end of the waste heat energy input pipeline 2 is connected with a waste heat source 21, the second end of the waste heat energy input pipeline 2 is connected with an air inlet valve 22, the air inlet valve 22 is connected with the heating box 1, and the waste heat energy input pipeline 2 is used for conveying waste heat energy from the waste heat source 21 so as to heat the silicon rod 5 to be heated;
temperature control module 4 respectively with heating cabinet 1, waste heat energy input pipeline 2's admission valve 22 and electric heater unit 3 connects, just temperature control module 4 is used for:
obtaining silicon rod parameters of the silicon rod to be heated, pipeline parameters of the waste heat energy input pipeline and heating box parameters of the heating box;
calculating the heating quantity and the heating time required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated and the preset target temperature;
and adjusting the air inflow of the waste heat energy input pipeline and the state of an electric heating device in the heating box according to the heating heat quantity and the heating time so as to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature.
Preferably, the inner wall of the heating box 1 is also provided with an insulating layer 6.
Preferably, the silicon rod parameters at least comprise the volume, the density, the specific heat capacity, the heat conductivity and the contact area of the silicon rod and air;
the pipeline parameters at least comprise the sectional area, the length, the inner diameter, the outer diameter, the density, the specific heat capacity, the heat conductivity coefficient of the pipeline and the flow rate of mixed gas in the pipeline;
the heating box parameters at least comprise the temperature of the mixed gas of the heating box air inlet pipeline, the temperature of the mixed gas of the heating box air outlet pipeline and the volume of the air in the heating box.
Preferably, the calculating, according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated, and a preset target temperature, a heating amount and a heating time required for heating the silicon rod to be heated to the target temperature includes:
calculating the heating quantity Q required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the initial temperature of the silicon rod to be heated and the preset target temperature Silicon ：
Q Silicon ＝ρ 1 v 1 C 1 (T n -T 0 )；
Wherein ρ 1 Is the density, v, of the silicon rod 1 Volume of the silicon rod, C 1 Is the specific heat capacity, T, of the silicon rod n Is a preset target temperature, T 0 The initial temperature of the silicon rod to be heated;
calculating an ideal heat exchange speed and an effective heat exchange speed of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and a preset target temperature;
and judging the magnitude relation between the effective heat exchange speed and the ideal heat exchange speed, and calculating the heating time required for heating the silicon rod to be heated to the target temperature according to the judgment result.
Preferably, the calculating an ideal heat exchange speed and an effective heat exchange speed of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and a preset target temperature specifically includes:
calculating the ideal heat exchange speed of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and the preset target temperatureDegree V 0 ：
V 0 ＝S 1 K 1 (T 2 +ΔT 1 -ΔT 2 -T n )；
Wherein S is 1 The contact area of the silicon rod with air, K 1 Is the thermal conductivity, T, of the silicon rod 2 Is the temperature, T, of the mixed gas in the outlet pipeline of the heating box n To a preset target temperature, Δ T 1 Is the temperature rise of the pipe per unit time, delta T 2 A temperature difference that reduces the temperature of the pipeline due to the heat lost when the pipeline is heated;
calculating the effective heat exchange speed V of the silicon rod to be heated and hot air according to the pipeline parameters and the heating box parameters 1 ：
V 1 ＝(ρ 3 V 3 C 3 +ρ 4 V 4 C 4 )×L 1 ×v 0 ×S 2 ×(T 1 -T 2 )×η 1 η 2 η 3 η 4 ；
Wherein ρ 3 Is the density of air, V 3 Is the volume of air in the mixture, C 3 Is the specific heat capacity of air, ρ 4 Is the density of water vapor, V 4 Is the volume of water vapour in the mixture, C 4 Is the specific heat capacity of water vapor, L 1 Is the length of the pipe, v 0 Is the flow rate of the mixed gas in the pipeline, S 2 Is the cross-sectional area of the pipe, T 1 For heating the temperature of the gas mixture in the inlet duct of the tank, eta 1 Is the heat exchange rate of the mixed gas and the pipeline eta 2 Is the heat exchange rate, eta, of the air in the heating box 3 Is the heat exchange rate, eta, of the air in the heating box and the silicon rod 4 Is a heat transfer loss of the hot air.
Preferably, the temperature rise Δ T of the pipeline per unit time 1 The calculation formula of (2) is as follows:
Figure BDA0003784385220000181
wherein r is 1 Is the outside diameter of the pipe，r 2 Is the internal diameter of the pipe, p 2 Is the density of the pipe, C 2 Is the specific heat capacity of the pipeline;
temperature difference delta T of pipeline reduced by heat lost in pipeline heating 2 The calculation formula of (2) is as follows:
Figure BDA0003784385220000182
wherein, K 2 Is the thermal conductivity of the pipe.
Preferably, the calculating the heating time required for heating the silicon rod to be heated to the target temperature according to the judgment result specifically includes:
if the effective heat exchange speed is less than the ideal heat exchange speed, calculating first heating time t required for heating the silicon rod to be heated from the initial temperature to an intermediate temperature according to the heating quantity and the effective heat exchange speed 1 ：
Figure BDA0003784385220000183
Wherein, Q' Silicon A first heating heat, T, required for heating the silicon rod from the initial temperature to an intermediate temperature z Is an intermediate temperature;
calculating a second heating time t required for heating the silicon rod to be heated from the intermediate temperature to the target temperature according to the heating quantity, the effective heat exchange speed and the heat exchange speed of the electric heating device 2 ：
Figure BDA0003784385220000184
Wherein, Q ″) Silicon A second heating heat, V, required for heating the silicon rod from the intermediate temperature to the target temperature 2 U is the voltage of a heating wire in the electric heating device, R is the resistance of the heating wire, mu is the resistivity of the heating wire,L 2 length of heating wire, η 5 The heat conversion efficiency of the heating wire;
the first heating time t 1 And the second heating time t 2 And adding to obtain the heating time required for heating the silicon rod to be heated to the target temperature.
Preferably, the calculating the heating time required for heating the silicon rod to be heated to the target temperature according to the judgment result specifically includes:
if the effective heat exchange speed is greater than the ideal heat exchange speed, calculating a third heating time t required for heating the silicon rod to be heated from the initial temperature to an intermediate temperature according to the heating quantity and the ideal heat exchange speed 3 ：
Figure BDA0003784385220000191
According to the heating heat quantity, the ideal heat exchange speed and the heat exchange speed of the electric heating device, calculating fourth heating time t required for heating the silicon rod to be heated from the intermediate temperature to the target temperature 4 ：
Figure BDA0003784385220000192
The third heating time t 3 And the fourth heating time t 4 And adding to obtain the heating time required for heating the silicon rod to be heated to the target temperature.
Preferably, the adjusting the air inflow of the waste heat energy input pipeline and the state of the electric heating device in the heating box to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature is detected includes:
adjusting the air inflow of the waste heat energy input pipeline to the maximum, and heating the silicon rod to be heated for a first heating time by using waste heat energy;
starting the electric heating device, simultaneously heating the silicon rod to be heated for a second heating time by using waste heat energy and the electric heating device until the silicon rod to be heated is heated to the target temperature, and sending a delivery signal;
alternatively, the first and second liquid crystal display panels may be,
adjusting the air inflow of the waste heat energy input pipeline to the maximum, and heating the silicon rod to be heated for a third heating time by using waste heat energy;
and starting the electric heating device, simultaneously heating the silicon rod to be heated for a fourth heating time by using waste heat energy and the electric heating device until the silicon rod to be heated is detected to be heated to the target temperature, and sending a delivery signal.
In a specific implementation, the working principle, the control flow and the technical effect of the device for heating a silicon rod by using waste heat energy provided in the embodiment of the present invention are the same as those of the method for heating a silicon rod by using waste heat energy in the above embodiment, and are not described herein again.
Referring to fig. 3, fig. 3 is a schematic structural view illustrating another preferred embodiment of an apparatus for heating a silicon rod using waste heat energy according to the present invention. The device for heating silicon rods by using waste heat energy comprises a processor 301, a memory 302 and a computer program stored in the memory 302 and configured to be executed by the processor 301, wherein the processor 301 executes the computer program to realize the method for heating silicon rods by using waste heat energy as described in any one of the above embodiments.
Preferably, the computer program may be partitioned into one or more modules/units (e.g., computer program 1, computer program 2, 8230; etc.) that are stored in the memory 302 and executed by the processor 301 to implement the present invention. The one or more modules/units may be a series of computer program instruction segments capable of performing specific functions, which are used for describing the execution process of the computer program in the device for heating silicon rods by using waste heat energy.
The Processor 301 may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, a discrete gate or transistor logic device, a discrete hardware component, etc., the general purpose Processor may be a microprocessor, or the Processor 301 may be any conventional Processor, the Processor 301 is a control center of the apparatus for heating silicon rods by using waste heat energy, and various interfaces and lines are used to connect various parts of the apparatus for heating silicon rods by using waste heat energy.
The memory 302 mainly includes a program storage area that may store an operating system, an application program required for at least one function, and the like, and a data storage area that may store related data and the like. In addition, the memory 302 may be a high speed random access memory, a non-volatile memory such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash Card (Flash Card), and the like, or the memory 302 may be other volatile solid state memory devices.
It should be noted that the above-mentioned device for heating silicon rods using waste heat energy may include, but is not limited to, a processor and a memory, and those skilled in the art will understand that the schematic configuration diagram of fig. 3 is only an example of the above-mentioned device for heating silicon rods using waste heat energy, and does not constitute a limitation of the above-mentioned device for heating silicon rods using waste heat energy, and may include more or less components than those shown in the drawings, or may combine some components, or different components.
The embodiment of the invention provides a method and a device for heating a silicon rod by using waste heat energy, wherein the silicon rod to be heated is transported to a heating box, and the temperature of the silicon rod to be heated is detected in real time; obtaining silicon rod parameters of the silicon rod to be heated, pipeline parameters of a waste heat energy input pipeline and heating box parameters of the heating box; calculating the heating quantity and the heating time required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated and the preset target temperature; and adjusting the air inflow of the waste heat energy input pipeline and the state of an electric heating device in the heating box according to the heating heat quantity and the heating time so as to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature. According to the embodiment of the invention, the heating time and the ex-warehouse temperature of the silicon rod can be accurately controlled by detecting the temperature of the silicon rod in real time and calculating the heating heat and the heating time, and the silicon rod is heated by using waste heat energy generated in a workshop, so that the energy consumption can be effectively reduced.
It should be noted that the above-described system embodiments are merely illustrative, where the units described as separate parts may or may not be physically separate, and the parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. In addition, in the drawings of the embodiment of the system provided by the present invention, the connection relationship between the modules indicates that there is a communication connection between them, and may be specifically implemented as one or more communication buses or signal lines. One of ordinary skill in the art can understand and implement it without inventive effort.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.

Claims (10)

1. A method for heating a silicon rod by using waste heat energy is characterized by comprising the following steps:
conveying a silicon rod to be heated to a heating box, and detecting the temperature of the silicon rod to be heated in real time;
obtaining silicon rod parameters of the silicon rod to be heated, pipeline parameters of a waste heat energy input pipeline and heating box parameters of the heating box;
calculating the heating quantity and the heating time required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated and the preset target temperature;
and adjusting the air inflow of the waste heat energy input pipeline and the state of an electric heating device in the heating box according to the heating heat quantity and the heating time so as to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature.
2. The method according to claim 1, wherein the parameters of the silicon rod include at least the volume, the density, the specific heat capacity, the thermal conductivity of the silicon rod, and the contact area between the silicon rod and air;
the pipeline parameters at least comprise the sectional area, the length, the inner diameter, the outer diameter, the density, the specific heat capacity, the heat conductivity coefficient of the pipeline and the flow rate of mixed gas in the pipeline;
the heating box parameters at least comprise the temperature of the mixed gas of the heating box air inlet pipeline, the temperature of the mixed gas of the heating box air outlet pipeline and the volume of the air in the heating box.
3. The method according to claim 1, wherein the calculating of the heating amount and the heating time required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated, and a preset target temperature specifically comprises:
calculating the heating quantity Q required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the initial temperature of the silicon rod to be heated and the preset target temperature Silicon ：
Q Silicon ＝ρ 1 v 1 C 1 (T n -T 0 )；
Where ρ is 1 Is the density, v, of the silicon rod 1 Is the volume of the silicon rod, C 1 Is the specific heat capacity, T, of the silicon rod n Is a preset target temperature, T 0 The initial temperature of the silicon rod to be heated;
calculating an ideal heat exchange speed and an effective heat exchange speed of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and a preset target temperature;
and judging the magnitude relation between the effective heat exchange speed and the ideal heat exchange speed, and calculating the heating time required for heating the silicon rod to be heated to the target temperature according to the judgment result.
4. The method according to claim 3, wherein the calculating the ideal heat exchange speed and the effective heat exchange speed of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and the preset target temperature specifically comprises:
calculating the ideal heat exchange speed V of the silicon rod to be heated and hot air according to the silicon rod parameters, the pipeline parameters, the heating box parameters and the preset target temperature 0 ：
V 0 ＝S 1 K 1 (T 2 +ΔT 1 -ΔT 2 -T n )；
Wherein S is 1 The contact area of the silicon rod with air, K 1 Is the thermal conductivity, T, of the silicon rod 2 Is the temperature, T, of the mixed gas in the outlet pipeline of the heating box n To a preset target temperature, Δ T 1 Is the temperature rise of the pipe per unit time, delta T 2 A temperature difference that reduces the temperature of the pipeline due to the heat lost when the pipeline is heated;
calculating the effective heat exchange speed V of the silicon rod to be heated and hot air according to the pipeline parameters and the heating box parameters 1 ：
V 1 ＝(ρ 3 V 3 C 3 +ρ 4 V 4 C 4 )×L 1 ×v 0 ×S 2 ×(T 1 -T 2 )×η 1 η 2 η 3 η 4 ；
Where ρ is 3 Is the density of air, V3 is the volume of air in the mixture, C 3 Is the specific heat capacity of air, ρ 4 Is the density of water vapor, V 4 Is the volume of water vapor in the mixture, C 4 Is the specific heat capacity of water vapor, L 1 Is the length of the pipe, v 0 Is the flow rate of the mixed gas in the pipeline, S 2 Is the cross-sectional area of the pipe, T 1 For heating the temperature of the gas mixture in the inlet duct of the tank, eta 1 Is the heat exchange rate of the mixed gas and the pipeline eta 2 Is the heat exchange rate, eta, of the air in the heating box 3 Is the heat exchange rate, eta, of the air in the heating box and the silicon rod 4 Is a heat transfer loss of the hot air.
5. The method according to claim 4, wherein the temperature rise Δ T of the pipe per unit time is set to be smaller than the temperature rise Δ T of the pipe per unit time 1 The calculation formula of (2) is as follows:
Figure FDA0003784385210000031
wherein r is 1 Is the outer diameter of the pipe, r 2 Is the internal diameter of the pipe, p 2 Is the density of the pipe, C 2 Is the specific heat capacity of the pipeline;
temperature difference delta T of pipeline reduced by heat lost in pipeline heating 2 The calculation formula of (2) is as follows:
Figure FDA0003784385210000032
wherein, K 2 Is the thermal conductivity of the pipe.
6. The method according to claim 5, wherein the calculating the heating time required for heating the silicon rod to be heated to the target temperature according to the determination result comprises:
if the effective heat exchange speed is less than the ideal heat exchange speed, calculating first heating time t required for heating the silicon rod to be heated from the initial temperature to an intermediate temperature according to the heating quantity and the effective heat exchange speed 1 ：
Figure FDA0003784385210000033
Wherein, Q' Silicon A first heating heat, T, required for heating the silicon rod from the initial temperature to an intermediate temperature z Is an intermediate temperature;
calculating a second heating time t required for heating the silicon rod to be heated from the intermediate temperature to the target temperature according to the heating quantity, the effective heat exchange speed and the heat exchange speed of the electric heating device 2 ：
Figure FDA0003784385210000041
Wherein, Q ″) Silicon A second heating heat, V, required for heating the silicon rod from the intermediate temperature to the target temperature 2 U is the voltage of the heating wire in the electric heating device, R is the resistance of the heating wire, μ is the resistivity of the heating wire, L is the heat exchange rate of the electric heating device 2 Length of heating wire, eta 5 The heat conversion efficiency of the heating wire;
the first heating time t 1 And the second heating time t 2 And adding to obtain the heating time required for heating the silicon rod to be heated to the target temperature.
7. The method according to claim 6, wherein the calculating the heating time required for heating the silicon rod to be heated to the target temperature according to the determination result specifically comprises:
if the effective heat exchange speed is greater than the ideal heat exchange speed, calculating a third heating time t required for heating the silicon rod to be heated from the initial temperature to an intermediate temperature according to the heating quantity and the ideal heat exchange speed 3 ：
Figure FDA0003784385210000042
According to the heating heat quantity, the ideal heat exchange speed and the heat exchange speed of the electric heating device, calculating fourth heating time t required for heating the silicon rod to be heated from the intermediate temperature to the target temperature 4 ：
Figure FDA0003784385210000043
The third heating time t 3 And the fourth heating time t 4 And adding to obtain the heating time required for heating the silicon rod to be heated to the target temperature.
8. The method for heating the silicon rod by using the waste heat energy as set forth in claim 7, wherein the adjusting the air inflow of the waste heat energy input pipeline and the state of the electric heating device in the heating box to heat the silicon rod to be heated until the silicon rod to be heated is detected to be heated to the target temperature specifically comprises:
adjusting the air inflow of the waste heat energy input pipeline to the maximum, and heating the silicon rod to be heated for a first heating time by using waste heat energy;
starting the electric heating device, simultaneously heating the silicon rod to be heated for a second heating time by using waste heat energy and the electric heating device until the silicon rod to be heated is detected to be heated to the target temperature, and sending a delivery signal;
alternatively, the first and second electrodes may be,
adjusting the air inflow of the waste heat energy input pipeline to the maximum, and heating the silicon rod to be heated for a third heating time by using waste heat energy;
and starting the electric heating device, simultaneously heating the silicon rod to be heated for fourth heating time by using waste heat energy and the electric heating device until the silicon rod to be heated is detected to be heated to the target temperature, and sending a delivery signal.
9. A device for heating a silicon rod by using waste heat energy is characterized by comprising a heating box, a waste heat energy input pipeline, an electric heating device and a temperature control module;
a temperature sensor is arranged in the heating box and used for detecting the temperature of the silicon rod to be heated in real time; the electric heating device is arranged in the heating box;
the first end of the waste heat energy input pipeline is connected with a waste heat source, the second end of the waste heat energy input pipeline is connected with an air inlet valve, the air inlet valve is connected with the heating box, and the waste heat energy input pipeline is used for conveying waste heat energy from the waste heat source so as to heat the silicon rod to be heated;
the temperature control module respectively with the heating cabinet waste heat energy input pipeline's admission valve and electric heater unit connects, just the temperature control module is used for:
obtaining silicon rod parameters of the silicon rod to be heated, pipeline parameters of the waste heat energy input pipeline and heating box parameters of the heating box;
calculating the heating quantity and the heating time required for heating the silicon rod to be heated to the target temperature according to the silicon rod parameters, the pipeline parameters, the heating box parameters, the initial temperature of the silicon rod to be heated and the preset target temperature;
and adjusting the air inflow of the waste heat energy input pipeline and the state of an electric heating device in the heating box according to the heating heat quantity and the heating time so as to heat the silicon rod to be heated until the silicon rod to be heated is heated to the target temperature.
10. An apparatus for heating silicon rods using waste heat energy, comprising a processor, a memory and a computer program stored in the memory and configured to be executed by the processor, wherein the processor executes the computer program to implement the method for heating silicon rods using waste heat energy as set forth in any one of claims 1 to 8.
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CN114411243A (en) * 2021-12-01 2022-04-29 银川隆基硅材料有限公司 Temperature control method and apparatus, computer storage medium, and single crystal furnace
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