CN115291273A - Directional neutron detector and detection method - Google Patents
Directional neutron detector and detection method Download PDFInfo
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- CN115291273A CN115291273A CN202210791870.XA CN202210791870A CN115291273A CN 115291273 A CN115291273 A CN 115291273A CN 202210791870 A CN202210791870 A CN 202210791870A CN 115291273 A CN115291273 A CN 115291273A
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
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Abstract
The invention discloses a directional neutron detector and a detection method; the detector includes: the neutron shielding layer is used for preventing slow neutrons from entering the cavity through the wall of the cavity; the slow neutron conversion component is arranged in the cavity and used for receiving slow neutrons entering the cavity from the opening end and generating He ions; the semiconductor detection component is arranged in the cavity, is matched with the slow neutron conversion component, and is used for receiving He ions generated by the slow neutron conversion component and exciting the semiconductor to generate electron-hole pairs to form a pulse electrical signal; and the signal processing circuit is connected with the detection component and used for receiving and processing the electric signal generated by the semiconductor detection component. The neutron detector not only can determine the direction of a neutron source, but also can manufacture detector assemblies or detector arrays with different sizes as required, can detect neutrons at fixed positions, is also convenient to carry, and can perform mobile detection operation.
Description
Technical Field
The application belongs to the technical field of nuclear detection, and particularly relates to a directional neutron detector and a detection method.
Background
The neutron detector is a detector capable of detecting neutrons, and is generally used for homeland security, neutron radioactive source measurement and the like. Since neutrons are not charged themselves and cannot be ionized or excited, they cannot be detected directly by ordinary detectors. A typical neutron detector generates secondary particles by the interaction of neutrons with some of the nuclei incorporated in the detector, and then measures the secondary particles, thereby achieving measurement of the neutrons.
The conventional neutron detector is based on 3 He gas detector, but can only detect whether a neutron radioactive source exists in a certain range, and can not directionally determine the position of the neutron radioactive source, moreover 3 The He detector is used as main equipment in the field of neutron detection, is expensive and large in size, is usually suitable for detecting a neutron source at a fixed position, and is not convenient to carry.
Disclosure of Invention
In view of this, in one aspect, some embodiments disclose a directional neutron detector, the detector comprising:
the neutron shielding layer is used for preventing slow neutrons from entering the cavity through the wall of the cavity;
the slow neutron conversion component is arranged in the cavity and used for receiving slow neutrons entering the cavity from the opening end and generating He ions;
the semiconductor detection component is arranged in the cavity, is matched with the slow neutron conversion component, and is used for receiving He ions generated by the slow neutron conversion component and exciting an electron hole pair generated in the semiconductor to generate an electric signal;
and the signal processing circuit is connected with the detection component and is used for receiving and processing the electric signal generated by the semiconductor detection component.
Some embodiments disclose a directional neutron detector, the neutron shielding layer disposed outside a wall of the cavity.
Some embodiments disclose a directional neutron detector, the semiconductor detection component being a PN junction semiconductor component or a schottky junction semiconductor component.
Some embodiments disclose the directional neutron detector, the slow neutron conversion component is a slow neutron conversion layer, and the slow neutron conversion layer is coated on the semiconductor detection component.
Some embodiments disclose a directional neutron detector, the slow neutron conversion component is a slow neutron conversion layer disposed inside the semiconductor detection component.
Some embodiments disclose a directional neutron detector, wherein an illuminating lamp is arranged inside the cavity and used for assisting in determining the detection range of the directional neutron detector.
Some embodiments disclose a directional neutron detector, the cavity having two open ends.
Some embodiments disclose a directional neutron detector, wherein the neutron shielding layer is made of slow neutron sensitive material.
Some embodiments disclose the directional neutron detector, further comprising a power source.
In another aspect, some embodiments disclose a directional neutron detection method, comprising:
(1) Receiving slow neutrons from a set direction by using a slow neutron conversion component and generating He ions;
(2) Receiving the generated He ions by using a semiconductor detection component, exciting electron-hole pairs generated in the semiconductor, and forming an electric signal corresponding to the He ions;
(3) The resulting electrical signal is received and processed to determine a slow neutron source from the electrical signal.
The directional neutron detector disclosed by the embodiment of the application can selectively receive a neutron source radiated from a selected direction, slow neutrons of the neutron source are converted into He ions, the He ions excite a semiconductor to generate electron-hole pairs to form electric signals, and the neutron source can be determined by processing the electric signals; the neutron detector can not only determine the direction of a neutron source, but also manufacture detector components or detector arrays with different sizes according to requirements, can be fixed at a fixed position for neutron detection, is convenient to carry, and is beneficial to carrying operation. The directional neutron detector has the advantages of low manufacturing cost, high detection efficiency and multiple functions, and has good application prospects in the technical field of neutron detection such as detection of unknown neutron sources and special nuclides in military, customs, frontier defense and the like.
Drawings
FIG. 1 is a schematic view of the structure of an embodiment 1 directional neutron detector;
FIG. 2 is a schematic view of the structure of an example 2 directional neutron detector;
FIG. 3 is a schematic view of the structure of an example 3 directional neutron detector;
fig. 4 a schematic view of a directional neutron detector according to embodiment 4.
Reference numerals
1. Open end of side wall 2
3. Neutron shield layer 4 neutron conversion component
5. Semiconductor detector 6 signal processing circuit
7. Detection range of signal line 8
Detailed Description
The word "embodiment" as used herein, is not necessarily to be construed as preferred or advantageous over other embodiments, including any embodiment illustrated as "exemplary". Performance index tests in the examples of this application, unless otherwise indicated, were performed using routine experimentation in the art. It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure.
Unless defined otherwise, technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; other test methods and techniques not specifically mentioned in the present application are those commonly employed by those of ordinary skill in the art.
The terms "substantially" and "approximately" are used herein to describe small fluctuations. For example, they may refer to less than or equal to ± 5%, such as less than or equal to ± 2%, such as less than or equal to ± 1%, such as less than or equal to ± 0.5%, such as less than or equal to ± 0.2%, such as less than or equal to ± 0.1%, such as less than or equal to ± 0.05%. Numerical data represented or presented herein in a range format is used merely for convenience and brevity and thus should be interpreted flexibly to include not only the numerical values explicitly recited as the limits of the range, but also to include all the individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range is explicitly recited. For example, a numerical range of "1 to 5%" should be interpreted to include not only the explicitly recited values of 1% to 5%, but also include individual values and sub-ranges within the indicated range. Thus, included in this numerical range are individual values, such as 2%, 3.5%, and 4%, and sub-ranges, such as 1% to 3%, 2% to 4%, and 3% to 5%, etc. This principle applies equally to ranges reciting only one numerical value. Moreover, such an interpretation applies regardless of the breadth of the range or the characteristics being described.
In this document, including the claims, conjunctions such as "comprising," including, "" carrying, "" having, "" containing, "" involving, "" containing, "and the like are understood to be open-ended, i.e., to mean" including but not limited to. Only the connection words of 'composed of' 8230; '8230'; 'composed of' 8230 ';' are closed connection words.
In the following detailed description, numerous specific details are set forth in order to provide a better understanding of the present disclosure. It will be understood by those skilled in the art that the present application may be practiced without some of these specific details. In the examples, some methods, means, instruments, apparatuses, etc. well known to those skilled in the art are not described in detail in order to highlight the subject matter of the present application.
On the premise of no conflict, the technical features disclosed in the embodiments of the present application may be combined arbitrarily, and the obtained technical solution belongs to the content disclosed in the embodiments of the present application.
In some embodiments, a directional neutron detector includes:
the neutron shielding layer is used for preventing slow neutrons from entering the cavity through the wall of the cavity; generally, the cavity body is provided with an internal cavity with a certain shape, the wall forming the cavity body is provided with an opening end, and the other end faces or side faces are of a closed structure, so that slow neutrons enter the internal cavity from the opening end to realize directional detection of the slow neutrons; generally, the neutron shielding layer arranged on the wall of the cavity can effectively capture slow neutrons and secondary charged particles generated by the neutrons, and can prevent the slow neutrons from penetrating through the wall of the cavity and entering the cavity to influence the accuracy of directional detection;
the slow neutron conversion component is arranged in the cavity and used for receiving slow neutrons entering the cavity from the opening end and generating He ions; generally, the slow neutron conversion component can absorb the slow neutrons incident from the open end and generate He ions, for example, the slow neutron conversion component generally contains a nuclide material with high absorptivity for the slow neutrons, absorbs the slow neutrons and converts the slow neutrons into He ions; nuclides having high absorption efficiency for slow neutrons include 6 Li、 10 B. Gd, etc.;
the semiconductor detection component is arranged in the cavity, is matched with the slow neutron conversion component, and is used for receiving He ions generated by the slow neutron conversion component, exciting electron hole pairs generated in the semiconductor and generating an electric signal;
and the signal processing circuit is connected with the semiconductor detection component and is used for receiving and processing the electric signal generated by the semiconductor detection component. Generally, the signal processing circuit is electrically connected to the semiconductor detection element in order to collect and amplify the electrical pulse signals generated from the semiconductor detection element.
The reaction cross section of the fast neutron, the slow neutron conversion component and the semiconductor detection component is small, and therefore signals are hardly contributed. The directional neutron detector mainly performs conversion processing on slow neutrons.
In some embodiments, the chamber having at least one open end is a cylindrical structure, one end face of which is an open end, and the side wall and the other end face are closed structures; and neutron shielding layers are arranged on the side wall and the end face outer wall of the closed structure.
In some embodiments, the cavity having at least one open end is a square structure, for example, a rectangular parallelepiped, square structure, wherein one side is an open end and the other five sides are closed surfaces, and the outer walls of the closed surfaces are provided with neutron shielding layers.
In some embodiments, the cavity has two open ends. For example, the cavity body is of a cylindrical structure, two opposite circular end faces of the cavity body are open ends, the side wall of the cavity body is of a closed structure, and a neutron shielding layer is arranged outside the cavity body. Any two opposite side surfaces of the cavity body with the square structure are two open ends, other side surfaces of the cavity body are of a closed structure, and a neutron shielding layer is arranged outside the cavity body. The neutron detector with the cavity with the two open ends can be used for detecting neutron sources in the directions of the two open ends.
In some embodiments, the neutron shielding layer is disposed outside of the walls of the cavity. The neutron shielding layer arranged on the outer wall of the wall can eliminate slow neutron radiation outside the cavity of the neutron detector, and prevent interference of slow neutrons inside and secondary band particles of the slow neutrons, so that the reliability of the detection result of the neutron source is influenced. If the neutron shielding layer is disposed inside the cavity, the reliability of the detection result may be affected.
In some embodiments, the neutron shielding layer is made of a slow neutron sensitive material, and as an alternative embodiment, the slow neutron sensitive material comprises a main component 6 Li、 10 B. The scattering cross-sectional area of the single substance or the compound of Gd or benzoxazine to slow neutrons is large. AGenerally, the slow neutron sensitive material is prepared to have a neutron shielding layer with a sufficient thickness so as to be able to completely capture slow neutrons and to prevent the slow neutrons and their secondary band particles from penetrating the neutron shielding layer.
As an alternative embodiment, the thickness of the neutron shielding layer is more than 10 μm.
In some embodiments, the semiconductor detection element is a PN junction semiconductor element or a schottky junction semiconductor element.
In some embodiments, the slow neutron conversion component is a slow neutron conversion layer coated on the semiconductor detection component. The slow neutron conversion component is generally arranged in the cavity and is matched with the semiconductor detection component, so that He ions generated by the slow neutron conversion component can effectively excite a semiconductor in the semiconductor detection component to generate electron-hole pairs and generate corresponding electric signals. The slow neutron conversion component arranged in the cavity can be in a form of a slow neutron conversion layer with a certain thickness, and the slow neutron conversion layer is attached to the semiconductor detection component to tightly coat the semiconductor detection component.
In some embodiments, the semiconductor detection component is in the form of a semiconductor component, and the semiconductor component adapted to the slow neutron conversion component may be arranged to be coated with the slow neutron conversion layer outside the semiconductor component to form a structure tightly attached and coated, which is beneficial to improving the absorption-conversion efficiency of slow neutrons.
In some embodiments, the slow neutron conversion component is a slow neutron conversion layer disposed inside the semiconductor detection component. The semiconductor detection component is usually a semiconductor component containing a PN junction or a schottky junction, and a slow neutron conversion layer adapted to the semiconductor detection component may be disposed inside the semiconductor detection component, for example, the slow neutron conversion layer is disposed between two semiconductor components and closely attached, and the slow neutron conversion component is wrapped in the middle by the two semiconductor components.
As an alternative embodiment, the slow neutron conversion layer is prepared by slow neutron sensitive material, for example, the slow neutron sensitive material is mainly composed of 6 Li、 10 B. Simple substances or compounds of Gd or benzoxazine, and the like.
As an alternative embodiment, the thickness of the slow neutron conversion layer is set to 1 to 2 μm.
In some embodiments, an illumination lamp is disposed inside the cavity to assist in determining the detection range of the directional neutron detector. Generally, the illuminating lamp is arranged at the front end of the slow neutron conversion component, the illuminating range and the angle of the illuminating lamp are consistent with those of a neutron source incident to the slow neutron conversion component, the detection range is convenient to observe, and the illuminating lamp can be used for assisting in determining the position of the neutron source in the detection range of the directional neutron detector.
In some embodiments, the directional neutron detector further comprises a power source. For providing power to the directional neutron detector.
Some embodiments disclose a method of directional neutron detection, comprising:
(1) Receiving slow neutrons from a set direction by using a slow neutron conversion component and generating He ions;
(2) Receiving the generated He ions by using a semiconductor detection component, exciting electron-hole pairs generated in the semiconductor, and forming an electric signal corresponding to the He ions;
(3) The resulting electrical signal is received and processed to determine a slow neutron source from the electrical signal.
In some embodiments, the directional neutron detection method is implemented by the directional neutron detector disclosed in the embodiments of the present invention. Generally, in the process of detecting a neutron source by a directional neutron detector, a cavity with an open end of the detector is moved, in the moving process of the cavity, the open end of the cavity is kept in an open state, if the neutron source is in the detection range of the open end, slow neutrons enter the cavity from the open end, interact with a slow neutron conversion component arranged in the cavity, are received and excited by the slow neutron conversion component to generate electron-hole pairs, form pulse electrical signals, and the generated pulse electrical signals are received by a detection component and are further processed, so that the position, the strength and the like of the neutron source can be determined.
The technical details are further illustrated in the following examples.
Example 1
Fig. 1 is a schematic structural view of a directional neutron detector disclosed in embodiment 1.
In embodiment 1, the directional neutron detector comprises a cylindrical cavity, the cylindrical cavity has an open end 2, and a side wall 1 and a bottom end sealed end of the cylindrical cavity of the neutron conversion sheet form a cylindrical chamber; neutron shielding layers 3 are arranged on the outer sides of the side wall 1 and the bottom end sealing end surface; in the cylindrical cavity, a neutron conversion component 4 is arranged on one side close to the bottom end face, the neutron conversion component 4 is a circular neutron conversion piece and is arranged to be in sealing and concreting with the inner surface of the side wall 1, a semiconductor detection component 5 is arranged between the neutron conversion component 4 and the bottom end face, the semiconductor detection component 5 is a circular semiconductor detection piece and is arranged to be in sealing and concreting with the inner surface of the side wall 1, and meanwhile, the semiconductor detection component 5 is tightly attached to the neutron conversion component 4; a signal processing circuit 6 arranged in the cylindrical cavity is arranged and connected with the semiconductor detection component 5, the signal processing circuit 6 is arranged and connected with a signal wire 7, and an electric signal collected and amplified by the signal processing circuit 6 is transmitted out;
as shown in FIG. 1, the open end 2 is located on the left side of the directional neutron detector, and the two dashed lines drawn from the cylindrical chamber indicate the range of the neutron source that can be detected and determine the direction of the neutron source, located between the two dashed lines on the left side of the neutron detector.
Example 2
Fig. 2 is a schematic structural view of the directional neutron detector disclosed in embodiment 1.
In embodiment 2, the directional neutron detector comprises a cylindrical cavity, the cylindrical cavity has an open end 2, and a cylindrical chamber is formed by a side wall 1 and a bottom closed end of the cylindrical cavity; neutron shielding layers 3 are arranged on the outer sides of the side wall 1 and the bottom end sealing end surface; in the cylindrical cavity, a semiconductor detection part 5 is arranged at one side close to the bottom end surface, and the semiconductor detection part 5 is a circular semiconductor detection piece and is fixedly connected with the inner surface of the side wall 1 in a sealing way; a neutron conversion component 4 is arranged between the semiconductor detection component 5 and the bottom end face, the neutron conversion component 4 is a circular neutron conversion sheet and is arranged to be sealed and fixedly bonded with the inner surface of the side wall 1, and meanwhile, the semiconductor detection component 5 is tightly attached to the neutron conversion component 4; the signal processing circuit 6 arranged in the cylindrical chamber is simultaneously connected with the semiconductor detection component 5, the signal processing circuit 6 is connected with the signal wire 7, and the electric signal collected and amplified by the signal processing circuit 6 is transmitted out;
as shown in FIG. 2, the open end 2 is located on the left side of the directional neutron detector, and the two dashed lines drawn from the cylindrical chamber indicate the range of the neutron source that can be detected and determine the direction of the neutron source, located between the two dashed lines on the left side of the neutron detector.
Example 3
Fig. 3 is a schematic structural view of the directional neutron detector disclosed in embodiment 3.
In embodiment 3, the directional neutron detector comprises a cylindrical cavity, wherein the cylindrical cavity is provided with an open end 2, and a cylindrical chamber is formed by a side wall 1 and a bottom end closed end of the cylindrical cavity; neutron shielding layers 3 are arranged on the outer sides of the side wall 1 and the bottom end sealing end surface; in the cylindrical cavity, a neutron conversion component 4 is arranged on one side close to the bottom end face, the neutron conversion component 4 is a circular neutron conversion piece and is arranged to be hermetically fixed with the inner surface of the side wall 1, a semiconductor detection component 5 is arranged between the neutron conversion component 4 and the bottom end face, the semiconductor detection component 5 is a circular semiconductor detection piece and is arranged to be hermetically fixed with the inner surface of the side wall 1, and meanwhile, the semiconductor detection component 5 is tightly attached to the neutron conversion component 4; the other side of the semiconductor detection component 5 is also connected with a neutron conversion component 4; the signal processing circuit 6 is arranged at the bottom of the cylindrical chamber and is connected with the semiconductor detection component 5, and the signal processing circuit 6 is simultaneously connected with the signal wire 7 and transmits the electric signals collected and amplified by the signal processing circuit 6;
as shown in fig. 3, the open end 2 is located on the left side of the directional neutron detector, and the two dashed lines drawn from the cylindrical chamber indicate the range of the neutron source that can be detected and determine the direction of the neutron source, located on the left side of the neutron detector, between the two dashed lines.
Example 4
Fig. 4 is a schematic structural view of the directional neutron detector disclosed in embodiment 4.
In embodiment 1, the directional neutron detector comprises a circular cavity, the circular cavity has two open ends 2, which are respectively located at two ends of the circular cavity, and a cylindrical cavity is formed inside a side wall 1 of the circular cavity; a neutron shielding layer 3 is arranged on the outer side of the side wall of the cylindrical cavity; a neutron conversion component 4 is arranged in the middle of the cylindrical cavity, the neutron conversion component 4 is a circular neutron conversion piece and is arranged to be in sealing and concretion with the inner surface of the side wall 1, a semiconductor detection component 5 is tightly attached to the neutron conversion component 4, the semiconductor detection component 5 is a circular semiconductor detection piece and is arranged to be in sealing and concretion with the inner surface of the side wall 1; a signal processing circuit 6 arranged in the cylindrical cavity is arranged and connected with the semiconductor detection component 5, the signal processing circuit 6 is arranged and connected with a signal wire 7, and an electric signal collected and amplified by the signal processing circuit 6 is transmitted out;
as shown in fig. 4, the open end 2 is located on the left side and the right side of the directional neutron detector, and the two dotted lines led out from the cylindrical chamber on the left side and the right side respectively indicate the range of the neutron source capable of being detected, determine the direction of the neutron source, and are located between the two dotted lines on the left side and the right side of the neutron detector.
The directional neutron detector disclosed by the embodiment of the application can selectively receive a neutron source radiated from a selected direction, converts slow neutrons of the neutron source into He ions, further excites a semiconductor to generate electron-hole pairs by the He ions to form an electric signal, and can determine the neutron source through processing the electric signal; the neutron detector not only can determine the direction of a neutron source, but also can manufacture detector assemblies or detector arrays with different sizes as required, can be fixed at a fixed position for neutron detection, is convenient to carry, and is favorable for carrying operation. The directional neutron detector has the advantages of low manufacturing cost, high detection efficiency and multiple functions, and has good application prospect in the technical field of neutron detection such as detection of unknown neutron sources and special nuclides in military affairs, customs, frontier defense and the like.
The technical solutions and the technical details disclosed in the embodiments of the present application are only examples to illustrate the inventive concept of the present application, and do not constitute a limitation on the technical solutions of the present application, and all the conventional changes, substitutions, combinations, and the like made to the technical details disclosed in the present application have the same inventive concept as the present application and are within the protection scope of the claims of the present application.
Claims (10)
1. A directional neutron detector, comprising:
the neutron shielding layer is used for preventing slow neutrons from entering the interior of the cavity through the wall of the cavity;
the slow neutron conversion component is arranged inside the cavity and used for receiving slow neutrons entering the cavity from the opening end to generate He ions;
the semiconductor detection component is arranged in the cavity, is matched with the slow neutron conversion component, and is used for receiving He ions generated by the slow neutron conversion component, exciting an electron hole pair generated in the semiconductor and generating an electric signal;
and the signal processing circuit is connected with the detection component and is used for receiving and processing the electric signal generated by the semiconductor detection component.
2. The directional neutron detector of claim 1, wherein the neutron shielding layer is disposed outside of a wall of the cavity.
3. The directional neutron detector of claim 1, wherein the semiconductor detection component is a PN junction semiconductor component or a schottky junction semiconductor component.
4. The directional neutron detector of claim 1, wherein the slow neutron conversion component is a slow neutron conversion layer coated on the semiconductor detection component.
5. The directional neutron detector of claim 1, wherein the slow neutron conversion component is a slow neutron conversion layer disposed inside the semiconductor detection component.
6. The directional neutron detector of claim 1, wherein an illumination lamp is disposed inside the cavity to assist in determining a detection range of the directional neutron detector.
7. The directional neutron detector of claim 1, wherein the cavity has two open ends.
8. The directional neutron detector of claim 1, wherein the neutron shielding layer is fabricated from a slow neutron sensitive material.
9. The directional neutron detector of claim 1, further comprising a power source.
10. A method of directional neutron detection, comprising:
(1) Receiving slow neutrons from a set direction by using a slow neutron conversion component and generating He ions;
(2) Receiving the generated He ions by using a semiconductor detection component, exciting electron-hole pairs generated in the semiconductor, and forming an electric signal corresponding to the He ions;
(3) The resulting electrical signal is received and processed to determine a slow neutron source from the electrical signal.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117214944A (en) * | 2023-11-09 | 2023-12-12 | 山东大学 | Slow neutron detection structure and method for measuring slow neutron energy spectrum |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117214944A (en) * | 2023-11-09 | 2023-12-12 | 山东大学 | Slow neutron detection structure and method for measuring slow neutron energy spectrum |
| CN117214944B (en) * | 2023-11-09 | 2024-02-09 | 山东大学 | Slow neutron detection structure and method for measuring slow neutron energy spectrum |
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