CN115287623B - Preparation method of curved diamond diaphragm - Google Patents
Preparation method of curved diamond diaphragm Download PDFInfo
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- CN115287623B CN115287623B CN202210958248.3A CN202210958248A CN115287623B CN 115287623 B CN115287623 B CN 115287623B CN 202210958248 A CN202210958248 A CN 202210958248A CN 115287623 B CN115287623 B CN 115287623B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/279—Diamond only control of diamond crystallography
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a preparation method of a curved diamond diaphragm, and belongs to the technical field of diamond preparation. The method comprises the steps of selecting a wafer-shaped monocrystalline silicon substrate and one or more annular monocrystalline silicon substrates with different outer edge sizes, sequentially stacking the annular monocrystalline silicon substrates and the wafer-shaped monocrystalline silicon substrates according to the outer edge sizes from large to small, depositing a layer of diamond film on the outer side surface of each layer of wafer-shaped monocrystalline silicon substrate by a chemical vapor deposition method after each layer of wafer-shaped monocrystalline silicon substrate is placed, finally removing all the silicon substrates to obtain a self-supporting diamond film, and finishing to obtain the complete curved surface-shaped diamond film. The curved diamond diaphragm prepared by the method has the advantages of uniform overall thickness, small stress, controllable quality, adjustable shape, simple preparation and low cost.
Description
Technical Field
The invention belongs to the technical field of diamond preparation, and particularly relates to a preparation method of a curved diamond diaphragm.
Background
With sapphire (Al) 2 O 3 ) Spinel (MgAl) 2 O 4 ) Compared with aluminum oxynitride (gamma-AlON, alON for short), zinc sulfide (ZnS) and the like, the diamond diaphragm prepared by the Chemical Vapor Deposition (CVD) method has extremely high hardness, high temperature resistance, wear resistance, corrosion resistance, excellent thermal conductivity, non-electric conduction, extremely low dielectric loss, good optical permeability in a far infrared range and other excellent physical and chemical properties, and is an ideal material for manufacturing important optical elements such as a laser window, a microwave window, an X-ray window, an infrared imaging seeker optical window/fairing, a micro lens and the like.
The following requirements are met by the diamond film required for manufacturing the optical element: 1) High quality: the optical performance is good in the working wave band, and even in an extremely severe external environment, the material still needs to meet the requirements of keeping higher transmittance, smaller optical self-emissivity and the like; 2) High strength: the mechanical strength requirement under the working state is met, and the method can adapt to the required severe working environment conditions, such as the impact on mechanical properties caused by strong airflow, sand dust and rain erosion; 3) Special curved surface structure: the aerodynamic thermal/force effect requirements of the aircraft are met, for example, the aerodynamic thermal/force effect requirements of the aircraft are met, for example, the aerodynamic thermal/force effect requirements of the aircraft have special aerodynamic structure appearance required by ultra-high-speed flight, and good imaging performance is achieved, for example, in order to reduce air resistance during high-speed flight, improve aerodynamic performance of the high-speed aircraft and improve environmental adaptability of an optical system, and the fairing is generally required to be in a spherical or dome-shaped curved surface structure.
However, most of curved diamond films prepared by the Chemical Vapor Deposition (CVD) method are directly deposited on curved substrates at one time, which generally has the problems of uneven quality and thickness, large internal stress, low breaking strength, etc., and the larger the dimensional parameters such as caliber, height, thickness, etc. of curved surfaces, the more serious the problems, greatly influencing the application research thereof. Meanwhile, since uniformity of plasma in height is difficult to ensure, it is difficult to deposit a diamond film having a large diameter by a Chemical Vapor Deposition (CVD) method. In addition, in order to obtain the complete and independent curved diamond film, the substrate needs to be removed after the deposition is completed, and the substrate with an integral structure has high removal difficulty, so that microcracks and even cracks on the inner wall of the diamond film are easy to occur, and the yield is low. In addition, the substrate is generally Mo, si, WC, tiC, and the like, and the material has high hardness and high brittleness and is difficult to process, and particularly for a curved substrate with a larger size, the processing precision of the curved substrate is difficult to ensure, so that the precision of depositing a diamond film on the curved substrate is influenced.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provides a preparation method of a curved diamond diaphragm. The curved diamond diaphragm prepared by the method has the advantages of uniform overall thickness, small stress, controllable quality, adjustable shape, simple preparation and low cost.
The invention is realized by the following general technical scheme:
a preparation method of curved surface shape diamond diaphragm, choose a wafer shape monocrystalline silicon substrate and one or more circular ring shape monocrystalline silicon substrates of different outer fringe sizes, the wafer shape monocrystalline silicon substrate is made up of arc top surface and flat bottom surface, and the outer fringe size of the wafer shape monocrystalline silicon substrate is smaller than the outer fringe size of the smallest circular ring shape monocrystalline silicon substrate; sequentially stacking circular single crystal silicon substrates according to the outer edge size from large to small, depositing a layer of diamond film on the outer side surface and the upper surface of each circular single crystal silicon substrate by a Chemical Vapor Deposition (CVD) method after each circular single crystal silicon substrate is placed, then placing the circular single crystal silicon substrate above the smallest circular single crystal silicon substrate, and depositing a layer of diamond film on the arc-shaped top surface of the circular single crystal silicon substrate by the Chemical Vapor Deposition (CVD) method; and removing the wafer-shaped monocrystalline silicon substrate and the annular monocrystalline silicon substrate to obtain a self-supporting diamond diaphragm, trimming the inner shape and the outer shape of the self-supporting diamond diaphragm, and finally obtaining the complete curved diamond diaphragm.
Further, the invention provides a specific technical scheme that:
a preparation method of a curved diamond diaphragm comprises the following steps:
and 6, removing the wafer-shaped monocrystalline silicon substrate and the annular monocrystalline silicon substrate to obtain a self-supporting diamond diaphragm, trimming the inner and outer sides of the self-supporting diamond diaphragm, and finally obtaining the complete curved diamond diaphragm.
Further, another specific technical scheme provided by the invention is as follows:
a preparation method of a curved diamond diaphragm comprises the following steps:
and 8, removing the wafer-shaped monocrystalline silicon substrate and the annular monocrystalline silicon substrate to obtain a self-supporting diamond diaphragm, trimming the inner and outer sides of the self-supporting diamond diaphragm, and finally obtaining the complete curved diamond diaphragm.
Further, in the preparation method of each technical scheme, the top surface of the wafer-shaped monocrystalline silicon substrate is conical, truncated cone-shaped, spherical crown-shaped, cylindrical or hemispherical, and the outer side surface of the circular monocrystalline silicon substrate is an inclined surface, an arc surface or a right-angle surface perpendicular to the bottom surface.
Further, in the preparation method of the technical schemes, the curved diamond diaphragm is in a spherical shape, a sharp arch shape or a special curved surface shape containing an aspheric surface, the caliber is 50-300 mm, the height is 10-800 mm, and the wall thickness is 0.5-10 mm.
Compared with the prior art, the invention has the following beneficial effects:
1) The curved diamond diaphragm is formed by multiple times of deposition on the outer side surfaces of the annular monocrystalline silicon substrate and the wafer monocrystalline silicon substrate which are placed in a superposition manner, the quality, the thickness and the like of the obtained diamond diaphragm can be controlled by accurately adjusting parameters in each deposition, the uneven deposition quality and the uneven thickness of the curved diamond diaphragm caused by uneven plasma distribution, change of deposition conditions and the like in one-time deposition are avoided, meanwhile, the internal stress of the diamond diaphragm can be relieved by multiple times of superposition deposition, the breaking strength of the diaphragm is improved, and the generation of cracks in the diaphragm in the substrate removal process is avoided.
2) The curved diamond diaphragm is formed by trimming the self-supporting diamond diaphragm which is prepared by repeatedly depositing one or more circular single crystal silicon substrates and one wafer single crystal silicon substrate on one another, the shapes of the outer side surfaces of the circular single crystal silicon substrates and the wafer single crystal silicon substrates can be designed according to the use requirements, the preparation difficulty of the special curved diamond diaphragm is greatly reduced, the structural accuracy of the diaphragm is improved, and particularly the pointed arch diamond diaphragm which contains an aspheric surface and has a special curved surface or a relatively large height diameter can be prepared by depositing.
3) The curved diamond diaphragm is composed of one or more annular monocrystalline silicon substrates and a wafer monocrystalline silicon substrate with a curved surface or a conical surface, the center of the wafer monocrystalline silicon substrate is of a hollow structure, substrate materials are saved, cost is reduced, and meanwhile difficulty in processing and removing the substrates is reduced.
Description of the drawings:
in order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a preparation flow of a curved diamond diaphragm in example 1.
Fig. 2 is a schematic diagram of a preparation flow of a curved diamond diaphragm in example 2.
Fig. 3 is a schematic diagram of a preparation flow of a curved diamond diaphragm in example 3.
Fig. 4 is a schematic illustration of a process for preparing a curved diamond diaphragm in example 4.
Fig. 5 is a schematic illustration of a process for preparing a curved diamond diaphragm in example 5.
In the figure: s-1, a first circular single crystal silicon substrate, S-2, a second circular single crystal silicon substrate, S-3, a third circular single crystal silicon substrate, S-4, a fourth circular single crystal silicon substrate, S-5, a fifth circular single crystal silicon substrate, S-6, a sixth circular single crystal silicon substrate, S-7, a seventh circular single crystal silicon substrate, S-8, an eighth circular single crystal silicon substrate, S-9, a ninth circular single crystal silicon substrate, S-10, a tenth circular single crystal silicon substrate, S-0, a wafer-shaped single crystal silicon substrate, D-1, a first part diamond film, D-2, a second part diamond film, D-3, a third part diamond film, D-4, a fourth part diamond film, D-5, a fifth part diamond film, D-6, a sixth part diamond film, D-7, a seventh part diamond film, D-8, an eighth part diamond film, D-9, a ninth part diamond film, a D-10, a D-6, a D-10, a D-0, a C-D-C, a curved surface, a membrane.
The specific embodiment is as follows:
the following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is evident that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
Example 1
A preparation method of a curved diamond diaphragm comprises the following steps:
and 5, removing the first annular monocrystalline silicon substrate S-1, the second annular monocrystalline silicon substrate S-2 and the wafer monocrystalline silicon substrate S-0 to obtain a self-supporting diamond diaphragm D-F, trimming the shape of the inner side and the outer side of the self-supporting diamond diaphragm D-F as shown in g in fig. 1, and finally obtaining a complete curved diamond diaphragm C-D as shown in h in fig. 1, wherein the diaphragm is hemispherical, the inner wall caliber of the diaphragm is about phi 50 mm, the inner Gao Yaowei mm and the wall thickness is about 0.5 mm.
Example 2
A preparation method of a curved diamond diaphragm comprises the following steps:
and 4, removing the first annular monocrystalline silicon substrate S-1 and the wafer monocrystalline silicon substrate S-0 to obtain a self-supporting diamond diaphragm D-F, trimming the shape of the inner side and the outer side of the diaphragm as shown in e in fig. 2, and finally obtaining a complete curved surface diamond diaphragm C-D, wherein the diaphragm is spherical crown-shaped, the inner wall caliber of the diaphragm is about phi 100 mm, the inner Gao Yaowei 20 mm and the wall thickness is about 4 mm as shown in F in fig. 2.
Example 3
A preparation method of a curved diamond diaphragm comprises the following steps:
step 1, ultrasonically cleaning a first annular single crystal silicon substrate S-1, a second annular single crystal silicon substrate S-2, a third annular single crystal silicon substrate S-3, a fourth annular single crystal silicon substrate S-4, a fifth annular single crystal silicon substrate S-0 and a wafer-shaped single crystal silicon substrate S-0, and drying by hot air, wherein the outer edge size of the first annular single crystal silicon substrate S-1 is larger than the outer edge size of the second annular single crystal silicon substrate S-2, the outer edge size of the second annular single crystal silicon substrate S-2 is larger than the outer edge size of the third annular single crystal silicon substrate S-3, the outer edge size of the third annular single crystal silicon substrate S-3 is larger than the outer edge size of the fourth annular single crystal silicon substrate S-4, the outer edge size of the fifth annular single crystal silicon substrate S-5 is larger than the outer edge size of the second annular single crystal silicon substrate S-0, the outer edge size of the second annular single crystal silicon substrate S-3 is larger than the outer edge size of the fourth annular single crystal silicon substrate S-4, and the fourth annular single crystal silicon substrate S-3 is a circular table, and the outer edge size of the third annular single crystal silicon substrate S-3 is a circular table;
and 4, removing the first annular monocrystalline silicon substrate S-1, the second annular monocrystalline silicon substrate S-2, the third annular monocrystalline silicon substrate S-3, the fourth annular monocrystalline silicon substrate S-4, the fifth annular monocrystalline silicon substrate S-5 and the wafer monocrystalline silicon substrate S-0 to obtain a self-supporting diamond diaphragm D-F, trimming the inner side and the outer side of the diaphragm as shown in D in fig. 3, and finally obtaining a complete curved diamond diaphragm C-D as shown in e in fig. 3, wherein the diaphragm is spherical crown-shaped, the inner wall caliber of the diaphragm is about phi 300 mm, the inner Gao Yaowei is mm, and the wall thickness of the diaphragm is about 6 mm.
Example 4
A preparation method of a curved diamond diaphragm comprises the following steps:
step 1, ultrasonically cleaning a first circular single crystal silicon substrate S-1, a second circular single crystal silicon substrate S-2, a third circular single crystal silicon substrate S-3, a fourth circular single crystal silicon substrate S-4, a fifth circular single crystal silicon substrate S-5, a sixth circular single crystal silicon substrate S-6, a seventh circular single crystal silicon substrate S-7, an eighth circular single crystal silicon substrate S-8, a ninth circular single crystal silicon substrate S-9, a tenth circular single crystal silicon substrate S-10 and a circular single crystal silicon substrate S-0, and drying by hot air, wherein the outer edge sizes of the first circular single crystal silicon substrate S-1 to the tenth circular single crystal silicon substrate S-10 are sequentially set from large to small, and the outer edge size of the circular single crystal silicon substrate S-0 is smaller than the outer edge size of the tenth circular single crystal silicon substrate S-10; the outer side surfaces of the first circular single crystal silicon substrate S-1 to the tenth circular single crystal silicon substrate S-10 are the side surfaces perpendicular to the bottom surface, and the top surface of the wafer-shaped single crystal silicon substrate S-0 is cylindrical;
and 4, removing the first to tenth annular monocrystalline silicon substrates S-1 to S-10 and the wafer monocrystalline silicon substrate S-0 to obtain a self-supporting diamond diaphragm D-F, finishing the shape of the inner side and the outer side of the diaphragm as shown in b in fig. 4, and finally obtaining a complete curved diamond diaphragm C-D which is in a pointed arch shape as shown in C in fig. 4, wherein the inner wall caliber of the diaphragm is about phi 300 mm, the inner Gao Yaowei is 700 mm, and the wall thickness is about 8 mm.
Example 5
A preparation method of a curved diamond diaphragm comprises the following steps:
and 5, removing the first annular monocrystalline silicon substrate S-1, the second annular monocrystalline silicon substrate S-2 and the wafer monocrystalline silicon substrate S-0 to obtain a self-supporting diamond diaphragm D-F, trimming the shape of the inner side and the outer side of the self-supporting diamond diaphragm D-F as shown by i in fig. 5, and finally obtaining a complete curved diamond diaphragm C-D as shown by j in fig. 5, wherein the diaphragm is hemispherical, the inner wall caliber of the diaphragm is about phi 100 mm, the inner Gao Yaowei mm and the wall thickness is about 10 mm.
It should be noted that the foregoing description is only specific embodiments of the present invention, and is not intended to limit the present invention, and the embodiments and features of the embodiments may be combined without conflict. Any modification, equivalent replacement, improvement, etc. should be included in the protection scope of the present invention, while remaining within the technical scope and principle of the present invention.
Claims (5)
1. A preparation method of a curved diamond diaphragm is characterized by comprising the following steps: selecting a wafer-shaped monocrystalline silicon substrate and one or more annular monocrystalline silicon substrates with different outer edge sizes, wherein the wafer-shaped monocrystalline silicon substrate consists of an arc-shaped top surface and a plane bottom surface, and the outer edge size of the wafer-shaped monocrystalline silicon substrate is smaller than the outer edge size of the minimum annular monocrystalline silicon substrate; sequentially stacking and placing annular monocrystalline silicon substrates according to the outer edge size from large to small, depositing a layer of diamond film on the outer side surface and the upper surface of each annular monocrystalline silicon substrate by a chemical vapor deposition method after each annular monocrystalline silicon substrate is placed, then placing the annular monocrystalline silicon substrate above the smallest annular monocrystalline silicon substrate, and depositing a layer of diamond film on the arc-shaped top surface of the annular monocrystalline silicon substrate by the chemical vapor deposition method; and removing the wafer-shaped monocrystalline silicon substrate and the annular monocrystalline silicon substrate to obtain a self-supporting diamond diaphragm, trimming the inner shape and the outer shape of the self-supporting diamond diaphragm, and finally obtaining the complete curved diamond diaphragm.
2. The method for preparing the curved diamond diaphragm according to claim 1, comprising the steps of:
step 1, ultrasonically cleaning a wafer-shaped monocrystalline silicon substrate and a circular ring-shaped monocrystalline silicon substrate, and drying by hot air;
step 2, firstly placing the circular single crystal silicon substrate with the largest outer edge size into a chemical vapor deposition device, and depositing a layer of continuous and uniform diamond film on the outer side surface and the upper surface of the circular single crystal silicon substrate by a chemical vapor deposition method;
step 3, superposing and placing a second circular single crystal silicon substrate with the largest outer edge size above the circular single crystal silicon substrate with the largest outer edge size, enabling the axis of the second circular single crystal silicon substrate to coincide with the central axis of the circular single crystal silicon substrate with the largest outer edge size, and then depositing a layer of continuous and uniform diamond film on the outer side surface and the upper surface of the circular single crystal silicon substrate by a chemical vapor deposition method;
step 4, sequentially repeating the operation of the step 3 on the rest circular single crystal silicon substrates according to the sequence from large to small;
step 5, superposing and placing the wafer-shaped monocrystalline silicon substrate above the circular monocrystalline silicon substrate with the minimum outer edge size, enabling the axis of the wafer-shaped monocrystalline silicon substrate to coincide with the central axis of the circular monocrystalline silicon substrate with the minimum outer edge size, and then depositing a layer of continuous and uniform diamond film on the arc-shaped top surface of the wafer-shaped monocrystalline silicon substrate by a chemical vapor deposition method;
and 6, removing the wafer-shaped monocrystalline silicon substrate and the annular monocrystalline silicon substrate to obtain a self-supporting diamond diaphragm, trimming the inner and outer sides of the self-supporting diamond diaphragm, and finally obtaining the complete curved diamond diaphragm.
3. The method for preparing the curved diamond diaphragm according to claim 2, comprising the steps of:
step 1, ultrasonically cleaning a wafer-shaped monocrystalline silicon substrate and a circular ring-shaped monocrystalline silicon substrate, and drying by hot air;
step 2, firstly placing the circular single crystal silicon substrate with the largest outer edge size into a chemical vapor deposition device, and depositing a layer of continuous and uniform diamond film on the outer side surface and the upper surface of the circular single crystal silicon substrate by a chemical vapor deposition method;
step 3, removing the diamond film on the upper surface of the circular single crystal silicon substrate with the maximum outer edge size, and only retaining the diamond film on the outer side surface of the circular single crystal silicon substrate;
step 4, superposing and placing a second circular single crystal silicon substrate with the largest outer edge size above the circular single crystal silicon substrate with the largest outer edge size, enabling the axis of the second circular single crystal silicon substrate to coincide with the central axis of the circular single crystal silicon substrate with the largest outer edge size, and then depositing a layer of continuous and uniform diamond film on the outer side surface and the upper surface of the circular single crystal silicon substrate by a chemical vapor deposition method;
step 5, removing the diamond film on the upper surface of the circular single crystal silicon substrate with the second large outer edge size, and only retaining the diamond film on the outer side surface of the circular single crystal silicon substrate;
step 6, sequentially repeating the operations of the steps 4 and 5 on the rest circular single crystal silicon substrates according to the sequence from large to small;
step 7, superposing and placing the wafer-shaped monocrystalline silicon substrate above the circular monocrystalline silicon substrate with the minimum outer edge size, enabling the axis of the wafer-shaped monocrystalline silicon substrate to coincide with the central axis of the circular monocrystalline silicon substrate with the minimum outer edge size, and then depositing a layer of continuous and uniform diamond film on the arc-shaped top surface of the wafer-shaped monocrystalline silicon substrate by a chemical vapor deposition method;
and 8, removing the wafer-shaped monocrystalline silicon substrate and the annular monocrystalline silicon substrate to obtain a self-supporting diamond diaphragm, trimming the inner and outer sides of the self-supporting diamond diaphragm, and finally obtaining the complete curved diamond diaphragm.
4. A method for preparing a curved diamond diaphragm according to any one of claims 1-3, characterized in that: the top surface of the wafer-shaped monocrystalline silicon substrate is conical, truncated cone-shaped, spherical crown-shaped, cylindrical or hemispherical, and the outer side surface of the circular monocrystalline silicon substrate is an inclined surface, an arc surface or a right-angle surface perpendicular to the bottom surface.
5. A method for preparing a curved diamond diaphragm according to any one of claims 1-3, characterized in that: the shape of the curved diamond diaphragm is spherical, sharp arch or special curved surface containing aspheric surface, the caliber is phi 50-300 mm, the height is 10-800 mm, and the wall thickness is 0.5-10 mm.
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| JPH07215796A (en) * | 1994-01-27 | 1995-08-15 | Sumitomo Electric Ind Ltd | Synthesis of flat diamond film, diamond self-standing film and polishing method of diamond film |
| CN104561925A (en) * | 2015-01-20 | 2015-04-29 | 太原理工大学 | Method for preparing self-supporting diamond film |
| CN105506576A (en) * | 2016-02-02 | 2016-04-20 | 太原理工大学 | Preparation method of high-quality self-support diamond thick film |
| CN113755818A (en) * | 2020-06-02 | 2021-12-07 | 阿里山钻石科技股份有限公司 | Diamond manufacturing apparatus, diamond manufacturing method using the same, and diamond inspection method |
| CN114318305A (en) * | 2021-12-28 | 2022-04-12 | 拓荆科技股份有限公司 | Wafer film deposition device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103328681B (en) * | 2011-01-20 | 2015-09-23 | 夏普株式会社 | Crucible and evaporation coating device |
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- 2022-08-11 CN CN202210958248.3A patent/CN115287623B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07215796A (en) * | 1994-01-27 | 1995-08-15 | Sumitomo Electric Ind Ltd | Synthesis of flat diamond film, diamond self-standing film and polishing method of diamond film |
| CN104561925A (en) * | 2015-01-20 | 2015-04-29 | 太原理工大学 | Method for preparing self-supporting diamond film |
| CN105506576A (en) * | 2016-02-02 | 2016-04-20 | 太原理工大学 | Preparation method of high-quality self-support diamond thick film |
| CN113755818A (en) * | 2020-06-02 | 2021-12-07 | 阿里山钻石科技股份有限公司 | Diamond manufacturing apparatus, diamond manufacturing method using the same, and diamond inspection method |
| CN114318305A (en) * | 2021-12-28 | 2022-04-12 | 拓荆科技股份有限公司 | Wafer film deposition device |
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