CN115286397B - Ceramic substrate and preparation method thereof - Google Patents

Ceramic substrate and preparation method thereof Download PDF

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CN115286397B
CN115286397B CN202210968258.5A CN202210968258A CN115286397B CN 115286397 B CN115286397 B CN 115286397B CN 202210968258 A CN202210968258 A CN 202210968258A CN 115286397 B CN115286397 B CN 115286397B
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substrate
ceramic substrate
grinding
ceramic
substrate material
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CN115286397A (en
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张凤林
彭家万
周文翔
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Guangdong University of Technology
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Abstract

The invention belongs to the technical field of ceramic products, and particularly relates to a ceramic substrate and a preparation method thereof. In order to improve the preparation method of the flaky ceramic heat dissipation substrate material while obtaining high heat conductivity and mechanical properties, the invention designs and optimizes the structures and materials of the inner substrate and the outer substrate, and densifies the ceramic substrate by combining a hot-pressing sintering process and the like, so that the inner substrate material and high heat conductivity particles form better combination, the outer substrate can effectively support the inner substrate and form better metallurgical interface combination with the inner substrate, and thus the prepared ceramic substrate has higher compactness, hardness, bending strength, wear resistance and heat conductivity, the application range of the prepared ceramic substrate is further widened, and the ceramic substrate can be applied to various fields such as heat conduction and heat dissipation devices, wear-resistant materials and the like. In addition, the preparation method is simple, high in efficiency, low in cost and applicable to industrialization.

Description

Ceramic substrate and preparation method thereof
Technical Field
The invention belongs to the technical field of ceramic products, and particularly relates to a ceramic substrate and a preparation method thereof.
Background
In recent years, electronic devices such as electric automobiles, wind power generation, LED lighting and the like enter a high-speed development stage, and the current electronic devices have large working current, high temperature and high frequency, so that the heat dissipation substrate materials in the electronic devices cannot meet the requirements. In order to ensure the stability and the service life of the device and the circuit, it is necessary to develop a heat dissipation substrate material with high thermal conductivity.
The ceramic substrate materials such as aluminum nitride, silicon nitride, aluminum oxide and the like have the performances of high temperature resistance, wear resistance, oxidation resistance, low thermal expansion coefficient, good thermal conductivity, insulativity, electric breakdown resistance and the like, and are widely applied to the field of integrated circuit electronic devices. However, the thermal conductivity of aluminum nitride is only 120-200W/(m.K), that of silicon nitride is only 60-100W/(m.K), and that of aluminum oxide is only 10-45W/(m.K). In order to meet the requirements of high power, high frequency and integration of electronic devices, it is necessary to further improve the heat conductivity of ceramic substrate materials. Meanwhile, the preparation process of the flaky ceramic substrate material is complex, and the common preparation method is sintering after casting the ceramic powder. However, the casting process requires addition of a large amount of organic solvents such as alcohols and ketones, such as polyvinyl butyral (PVB), polyvinyl alcohol (PVA), and other binders, dibutyl phthalate (DBP), and other plasticizers, and dispersants such as silane coupling agents, and these organic solvents are very likely to cause environmental pollution during casting, binder removal, and other processes, and harm the health of operators. Therefore, there is a need for an improved method for preparing a sheet-like ceramic heat-dissipating substrate material while achieving high thermal conductivity and mechanical properties.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a preparation method of a ceramic substrate, which can obtain high thermal conductivity and mechanical properties through hot-pressing sintering densification and other processes, and can be applied to the fields of heat conduction, wear resistance and the like.
In order to achieve the purpose, the invention adopts the technical scheme that:
the invention provides a preparation method of a ceramic substrate, which comprises the following steps of preparing raw materials of a main substrate material, an auxiliary substrate material and a high-thermal-conductivity particle material, wherein the main substrate material is selected from powdered aluminum nitride and oxygenAt least one of aluminum, silicon carbide and silicon nitride, and the auxiliary substrate material is selected from Al 2 O 3 ，SiO 2 、B 2 O 3 、Bi 2 O 3 、Y 2 O 3 、MgO、CaO、 Li 2 O, znO, the high thermal conductive particulate material being selected from at least one of diamond, cubic boron nitride, tungsten diboride, graphite flakes; structurally, the ceramic substrate comprises an outer substrate and an inner substrate on two sides, and a single layer of high-thermal-conductivity particle materials which are tightly arranged between the inner substrates, wherein the outer substrate is made of a main substrate material and an auxiliary substrate material, and the inner substrate is made of an auxiliary substrate material; the preparation method of the ceramic substrate comprises the following steps:
s1, preparing an outer matrix: mixing and ball-milling a powdery main substrate material and an auxiliary substrate material into slurry, and preparing into a sheet-shaped green compact with the thickness of 0.05-2mm through cold press molding;
s2, preparing an inner matrix, namely, ball-milling auxiliary substrate material powder into slurry, and then performing cold press molding to prepare a sheet-shaped green compact with the thickness of 0.05-2 mm;
s3, tightly arranging the high-thermal-conductivity particle materials on the surface of the inner matrix in a single layer, covering the other inner matrix on the surface of the high-thermal-conductivity particle materials for fixation, respectively covering the two outer matrixes on the two sides of the inner matrix for fixation, and then densifying the obtained composite layer by adopting rapid pressure sintering, wherein the sintering temperature is 900-1800 ℃, the heat preservation time is 5-30min, the sintering pressure is 10-100MPa, and the sintering environment is vacuum, nitrogen or argon;
and S4, thinning and grinding the sheet ceramic substrate obtained by sintering to reduce the thickness of the outer matrix to 0.01-1mm, thus obtaining the ceramic substrate.
According to the invention, the structures and materials of the inner matrix and the outer matrix are designed and optimized, and the ceramic substrate is densified by combining a hot-pressing sintering process, wherein the inner matrix material can be well combined with high-heat-conductivity particles at a certain temperature, and the outer matrix can effectively support the inner matrix in the sintering process and form a good metallurgical interface with the inner matrix, so that the substrate material is ensured to have excellent compactness, mechanical property and heat conductivity. And finally, thinning and grinding the ceramic substrate to obtain the ceramic substrate material with high strength, high wear resistance and high thermal conductivity. The ceramic substrate prepared by the method can be suitable for multiple fields, such as being applied to the field of high-power and high-integration semiconductor devices as a heat dissipation substrate, and can also be used for wear-resistant materials and devices.
Preferably, the particle size of the main substrate material and the particle size of the auxiliary substrate material are both 1nm-200 μm, and the particle size of the high thermal conductive particle material is 100 μm-2000 μm.
Preferably, the single-layer closely-arranged high thermal conductivity particle material in step S3 accounts for 20% -50% of the total volume of the composite layer, and after thinning and grinding in step S4, the high thermal conductivity particle material accounts for 40% -70% of the total volume of the ceramic substrate.
Preferably, the auxiliary substrate material comprises 20wt% 2 O 3 ，10wt％MgO，55wt％SiO 2 ，5wt％ZnO， 10wt％Bi 2 O 3 Or 10wt% MgO,45wt% SiO 2 ，5wt％CaO，10wt％B 2 O 3 ，30wt％Al 2 O 3 Or 30wt% of B 2 O 3 ，40wt％Bi 2 O 3 ，10wt％Li 2 O，20wt％SiO 2 。
Preferably, in step S1, the volume percentage of the main substrate material is 60% to 100%.
Preferably, in the steps S1 and S2, during ball milling, absolute ethyl alcohol is used as a ball milling solvent, high-purity zirconia balls are used as grinding balls, the mass ratio of the powder material to the absolute ethyl alcohol to the grinding balls is 1 (1-3) to (1-10), the ball milling time is 1-15h, and the rotating speed is 150-350r/min.
Preferably, in the steps S1 and S2, the pressure of cold press molding is 100-250MPa, and the thickness of the green compact is 0.05-2mm.
Preferably, the thickness of the outer substrate is reduced to 0-0.2mm after thinning and grinding in step S4.
Preferably, in step S4, grinding is performed by using a 400-1000 mesh resin or metal bond diamond grinding wheel, and grinding is performed by using a double-sided grinder with 500nm-10 μm diamond grinding fluid.
Preferably, the high thermal conductivity particulate material is selected from diamond or cubic boron nitride or tungsten diboride particles.
Preferably, the host substrate material is selected from aluminum nitride or aluminum oxide or silicon nitride powder.
The invention also provides the ceramic substrate prepared by the preparation method.
The invention also provides application of the ceramic substrate in preparation of heat conduction and dissipation materials and/or wear-resistant materials.
Compared with the prior art, the invention has the beneficial effects that:
the invention discloses a preparation method of a ceramic substrate, which is characterized in that the structure and the material of an inner matrix and an outer matrix are optimized through design, and the ceramic substrate is densified through a hot-pressing sintering process and the like, so that the inner matrix material and high-heat-conductivity particles are well combined, the outer matrix can effectively support the inner matrix and form a good metallurgical interface with the inner matrix, and therefore, the prepared ceramic substrate is ensured to have high density, hardness, bending strength, wear resistance and heat conductivity, the application range of the prepared ceramic substrate is further widened, and the ceramic substrate can be applied to the fields of heat-conducting heat-dissipating devices, wear-resistant materials and the like. In addition, the preparation method is simple, high in efficiency, low in cost and applicable to industrialization.
Drawings
FIG. 1 is a schematic diagram of a structure and a fabrication process of a ceramic substrate;
FIG. 2 is a graph of the structure of an aluminum nitride ceramic substrate and its thermal conductivity at different outer substrate thicknesses.
Detailed Description
The following further describes embodiments of the present invention. It should be noted that the description of the embodiments is provided to help understanding of the present invention, and is not intended to limit the present invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The experimental procedures in the following examples were carried out by conventional methods unless otherwise specified, and the test materials used in the following examples were commercially available by conventional methods unless otherwise specified.
EXAMPLE 1 preparation method of sheet-shaped ceramic substrate
The raw material of the sheet-shaped ceramic substrate comprises a main substrate material, an auxiliary substrate material and a high heat-conducting particle material. The main substrate material used was an aluminum nitride powder having a particle size of 10 μm, and the auxiliary substrate material contained 2 wt% of Y 2 O 3 ，10wt％ MgO，55wt％SiO 2 ，5wt％ZnO，10wt％Bi 2 O 3 The high heat conductive particle material uses 12/14 mesh diamond.
Structurally, the flaky ceramic substrate comprises an outer substrate and an inner substrate on two sides, and high-thermal-conductivity particles positioned between the inner substrates, wherein the high-thermal-conductivity particles are arranged in a single-layer manner, namely, each high-thermal-conductivity particle is only contacted with the inner substrate in a plane, the upper and lower overlapping states do not occur, and the high-thermal-conductivity particles arranged in the single-layer manner occupy 28% of the total volume of the ceramic substrate. In the outer matrix, the volume percentage of the main substrate material is 60%, and the volume percentage of the auxiliary substrate material is 40%. The inner base is made of an auxiliary substrate material.
The preparation method of the flaky ceramic substrate material comprises the following steps:
(1) Preparing an outer matrix: weigh powdered main substrate material and supplementary base plate material, place polytetrafluoroethylene ball-milling jar in to absolute ethyl alcohol is the ball-milling solvent, and the zirconia ball of high purity is as the milling ball, according to the powder: anhydrous ethanol: the weight ratio of grinding balls = 1. Then the mixed slurry is filled into a flask of a rotary instrument and rotary evaporation is carried out at the temperature of 65 ℃ to remove alcohol; the obtained powder is sieved and then is cold-pressed and molded by a hard alloy die under the uniaxial pressure of 200Mpa to prepare a flaky pressed compact with the thickness of 0.5mm.
(2) Preparing an inner matrix: mixing the auxiliary substrate material powder (Y) 2 O 3 ，MgO，SiO 2 ，ZnO，Bi 2 O 3 ) Mixing with absolute ethyl alcohol, taking high-purity zirconia balls as grinding balls, and then mixing the materials according to the following powder: anhydrous ethanol: uniformly mixing the grinding balls = 1; sieving the obtained powder, cold pressing under 200Mpa of single-axis pressure by using Rongmei FLS four-column hydraulic press, and making into sheet-like pressed blank material with thickness of 0.5mm.
(3) As shown in FIG. 1, 12/14 mesh diamond is densely distributed in a single layer on the surface of an inner substrate without overlapping the inner substrate and the outer substrate, and the inner substrate is fixed by covering the surface of the inner substrate with another layer, and the outer substrate is fixed by covering the outer substrate with two layers on both surfaces of the inner substrate. Then, use
Figure BDA0003795511380000041
The graphite mold and the rapid direct-fired hot-pressing sintering machine (DSP 507) are densified in a rapid hot-pressing sintering mode, the sintering temperature is 1750 ℃, the heat preservation time is 10min, the sintering pressure is 40MPa, and the protective atmosphere is argon.
The observation of a scanning electron microscope shows that the aluminum nitride ceramic substrate prepared by the method has good embedding of the matrix to diamond, has no obvious air holes and cracks, and simultaneously realizes good combination of the outer matrix and the inner matrix. The density of 98% can be obtained through Archimedes drainage method test, the thermal diffusion coefficient is obtained through laser thermal conductivity meter (LFA 447) test, the thermal conductivity of the sintered ceramic substrate is 195W/(m.K) through calculation according to the density and the specific heat capacity, and the bending strength is 236MPa through three-point bending resistance test by using a universal tester (AGS-X-50 KND).
(4) As shown in fig. 2, there is a strict correlation between the thickness of the outer matrix layer and the thermal conductivity of the ceramic substrate, which can be controlled by the thickness of the outer matrix layer. For this purpose, the ceramic substrate in sheet form (aluminum nitride ceramic substrate) prepared by sintering was thinned and ground: the resin bond diamond grinding wheel of 800 meshes is used, the rotating speed, the cutting depth and the feeding speed of the grinding wheel are respectively set to be 20m/s, 15 mu m and 7.5m/min, and a flat grinder is used for grinding and thinning the metal outer substrate to be 0.1mm. And ground using a double-side grinder (FD-6 BL) in a diamond water-based grinding fluid (purchased from Mitsui grinding technologies, ltd.) having a particle size of 5 μm, and after thinning-grinding, the outer matrix had a thickness of 0.1mm and a surface roughness of Ra 96nm as measured using a white light interferometer (Taylor-Hobson). The volume fraction of the thinned diamond in the ceramic substrate is increased to 52%, and the thermal conductivity is increased to 275W/(m.K).
EXAMPLE 2 method for producing sheet-like ceramic substrate
The raw material of the sheet-shaped ceramic substrate comprises a main substrate material, an auxiliary substrate material and a high heat-conducting particle material. The main substrate material used was alumina powder having a particle size of 500nm, the auxiliary substrate material comprised 10wt% of MgO,45wt% of SiO 2 ,5wt％CaO,10wt％B 2 O 3 ,30wt％Al 2 O 3 The high-thermal-conductivity particle material uses 100/120-mesh cubic boron nitride.
Structurally, the flaky ceramic substrate comprises an outer substrate and an inner substrate on two sides, and high-thermal-conductivity particles positioned between the inner substrates, wherein the high-thermal-conductivity particles are arranged in a single-layer manner, namely, each high-thermal-conductivity particle is only contacted with the inner substrate in a plane, the upper and lower overlapping states do not occur, and the high-thermal-conductivity particles arranged in the single-layer manner account for 20% of the total volume of the ceramic substrate. In the outer matrix, the volume percentage of the main substrate material is 60%, and the volume percentage of the auxiliary substrate material is 40%. The inner base is made of an auxiliary substrate material.
The preparation method of the flaky ceramic heat dissipation substrate material comprises the following steps:
(1) Preparing an outer matrix: weigh powdered main substrate material and supplementary substrate material, arrange polytetrafluoroethylene ball-milling jar in to absolute ethyl alcohol is the ball-milling solvent, and the zirconia ball of high purity is as the milling ball, according to the powder: anhydrous ethanol: the weight ratio of grinding balls = 1. Then the mixed slurry is filled into a flask of a rotary instrument and rotary evaporation is carried out at the temperature of 60 ℃ to remove alcohol; the obtained powder is sieved and then is cold-pressed and molded by a hard alloy die under the uniaxial pressure of 150Mpa to prepare a flaky pressed compact with the thickness of 0.2mm.
(2) Preparing an inner matrix: mixing auxiliary substrate material powder (MgO, siO) 2 ,CaO,B 2 O 3 ,Al 2 O 3 ) Mixing with absolute ethyl alcohol, taking high-purity zirconia balls as grinding balls, and then mixing the materials according to the following powder: anhydrous ethanol: the weight ratio of the grinding balls = 1; sieving the obtained powder, cold pressing under 150Mpa of single-axis pressure by Rongmei FLS four-column hydraulic press, and making into sheet-like pressed blank material with thickness of 0.2mm.
(3) As shown in FIG. 1, 100/120 mesh cubic boron nitride particles are densely distributed on the surface of an inner substrate in a single layer without overlapping, and the other inner substrate is fixed by covering the surface of a diamond layer, and two outer substrates are fixed by covering the two surfaces of the inner substrate. Then, use
Figure BDA0003795511380000051
The graphite mold and the rapid direct-fired hot-pressing sintering machine (DSP 507) are densified in a rapid hot-pressing sintering mode, the sintering temperature is 1550 ℃, the heat preservation time is 10min, the sintering pressure is 35MPa, and the protective atmosphere is argon.
The observation of a scanning electron microscope shows that the matrix of the alumina ceramic substrate prepared by the method has good embedding on diamond, no obvious air holes and cracks, and good combination of the outer matrix and the inner matrix is realized. The archimedes drainage test shows that 96% compactness can be obtained.
(4) Thinning and grinding the sheet ceramic substrate (alumina ceramic substrate) prepared by sintering: the metal bond diamond grinding wheel with 400 meshes is used, the rotating speed, the cutting depth and the feeding speed of the grinding wheel are respectively set to be 10m/s, 10 mu m and 5m/min, and a surface grinder is used for grinding and thinning the metal outer substrate to be 0.2mm. And grinding by using a diamond water-based grinding fluid with the grain diameter of 1 mu m by using a double-sided grinder (FD-6 BL), thinning and grinding to obtain an outer matrix with the thickness of 0.2mm, testing by using a white light interferometer (Taylor-Hobson) to obtain the surface roughness of Ra 86nm and the volume fraction of cubic boron nitride of 41 percent, testing by using a laser thermal conductivity meter (LFA 447) to obtain the thermal diffusion coefficient, calculating according to the density and the specific heat capacity to obtain the thermal conductivity of 51W/(m.K), and testing by using a three-point bending method by using a universal testing machine (AGS-X-50 KND) to obtain the bending strength of 201MPa.
EXAMPLE 3 method for producing sheet-like ceramic substrate
The raw material of the sheet-shaped ceramic substrate comprises a main substrate material, an auxiliary substrate material and a high heat-conducting particle material. The main substrate material uses silicon nitride powder having a particle diameter of 100 μm, and the auxiliary substrate material comprises 30wt% 2 O 3 ,40 wt％Bi 2 O 3 ，10wt％Li 2 O,20wt％SiO 2 The high heat conducting particle material uses 50/60 mesh tungsten diboride particles.
Structurally, the flaky ceramic substrate comprises an outer substrate and an inner substrate on two sides, and high-thermal-conductivity particles positioned between the inner substrates, wherein the high-thermal-conductivity particles are arranged in a single-layer manner, namely, each high-thermal-conductivity particle is only contacted with the inner substrate in a plane, the upper and lower overlapping states do not occur, and the high-thermal-conductivity particles arranged in the single-layer manner account for 23% of the total volume of the ceramic substrate. In the outer matrix, the volume percentage of the main substrate material is 80%, and the volume percentage of the auxiliary substrate material is 20%. The inner base is made of an auxiliary substrate material.
The preparation method of the flaky ceramic substrate material comprises the following steps:
(1) Preparing an outer matrix: weigh powdered main substrate material and supplementary substrate material, arrange polytetrafluoroethylene ball-milling jar in to absolute ethyl alcohol is the ball-milling solvent, and the zirconia ball of high purity is as the milling ball, according to the powder: anhydrous ethanol: the weight ratio of grinding balls = 1. Then the mixed slurry is filled into a flask of a rotary instrument and rotary evaporation is carried out at the temperature of 60 ℃ to remove alcohol; the obtained powder is sieved and then is cold-pressed and molded by a hard alloy die under the uniaxial pressure of 200Mpa to prepare a flaky pressed compact with the thickness of 0.4mm.
(2) Preparing an inner matrix: mixing the auxiliary substrate material powder (B) 2 O 3 ，Bi 2 O 3 ，Li 2 O,SiO 2 ) Mixing with absolute ethyl alcohol, taking high-purity zirconia balls as grinding balls, and then mixing the materials according to the following powder: anhydrous ethanol: uniformly mixing by using a planetary ball mill in a weight ratio of grinding balls = 1; the obtained powder is sieved, and then cold-pressed and molded under 200Mpa uniaxial pressure by using a Rongmei FLS four-column hydraulic press to prepare a sheet-shaped pressed blank material with the thickness of 0.2mm.
(3) As shown in figure 1, 50/60-mesh tungsten diboride particles are densely distributed on the surface of an inner matrix in a single layer without an up-and-down overlapping state, the other layer of inner matrix is covered on the surface of a diamond layer for fixation, and then two layers of outer matrixes are respectively covered on two surfaces of the inner matrix for fixation. Then, use
Figure BDA0003795511380000061
The graphite mold and the rapid direct-fired hot-pressing sintering machine (DSP 507) are densified in a rapid hot-pressing sintering mode, the sintering temperature is 1800 ℃, the heat preservation time is 15min, the sintering pressure is 40MPa, and the protective atmosphere is argon.
The observation of a scanning electron microscope shows that the matrix of the silicon nitride ceramic substrate prepared by the method has good embedding to diamond, no obvious air holes and cracks, and good combination of the outer matrix and the inner matrix is realized. The compactness of 97% can be obtained through Archimedes drainage test.
(4) Thinning and grinding the sheet ceramic substrate (silicon nitride ceramic substrate) prepared by sintering: using 800-mesh resin bond diamond grinding wheel, respectively setting the rotation speed, cutting depth and feeding speed of the grinding wheelSetting the grain size to be 20m/s, 15 mu m and 7.5m/min, grinding the thinned metal outer matrix to be 0.01mm by using a plane grinder, grinding the thinned metal outer matrix by using a diamond water-based grinding fluid with the grain size of 5 mu m by using a double-sided grinder (FD-6 BL), after thinning and grinding, completely removing the outer matrix, testing by using a white light interferometer (Taylor-Hobson) to obtain a ceramic substrate with the surface roughness (Ra) of 90nm and the volume fraction of tungsten diboride of 40 percent, grinding and polishing, testing the tribological performance of the sample by using a CFT-I type material surface performance comprehensive tester (Kaiki Hua technology development Co., ltd., lanzhou) by using a friction wear test and a ball disc type friction wear test, and testing the tribological performance of the sample by using a CFT-I type material surface performance comprehensive tester (Kaiki Hua technology development Co., ltd., lanzhou) under the load of 5N, wherein the wear rate of the silicon nitride ceramic substrate is 3.82 multiplied by 10 -6 mm 3 Has a wear rate of 5.62 multiplied by 10 for silicon nitride ceramics without the addition of highly heat conductive particles -6 mm 3 The result shows that the wear resistance of the ceramic substrate is obviously superior to that of silicon nitride. The thermal diffusivity is obtained by testing with a laser thermal conductivity meter (LFA 447), the thermal conductivity is 121W/(m.K) according to the density and the specific heat capacity, and the bending strength is 456MPa by testing with a three-point bending method with a universal testing machine (AGS-X-50 KND).
The embodiments of the present invention have been described in detail, but the present invention is not limited to the described embodiments. It will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and the scope of protection is still within the scope of the invention.

Claims (10)

1. The preparation method of the ceramic substrate is characterized in that the ceramic substrate comprises a main substrate material, an auxiliary substrate material and a high-heat-conductivity particle material, wherein the main substrate material is selected from at least one of powdery aluminum nitride, aluminum oxide, silicon carbide and silicon nitride, and the auxiliary substrate material is selected from Al 2 O 3 ，SiO 2 、B 2 O 3 、Bi 2 O 3 、Y 2 O 3 、MgO、CaO、Li 2 O, znO, the high thermal conductive particulate material is selected from diamond, cubic boron nitride, tungsten diboride, graphite flakesAt least one of; structurally, the ceramic substrate comprises an outer substrate and an inner substrate on two sides, and a single layer of high-thermal-conductivity particle materials which are tightly arranged between the inner substrates, wherein the outer substrate is made of a main substrate material and an auxiliary substrate material, and the inner substrate is made of an auxiliary substrate material; the preparation method of the ceramic substrate comprises the following steps:
s1, preparing an outer matrix: mixing and ball-milling a powdery main substrate material and an auxiliary substrate material into slurry, and preparing a sheet-shaped green compact with the thickness of 0.05-2mm through cold press molding;
s2, preparing an inner matrix, namely, ball-milling auxiliary substrate material powder into slurry, and then performing cold press molding to prepare a sheet-shaped green compact with the thickness of 0.05-2 mm;
s3, tightly arranging the high-thermal-conductivity particle materials on the surface of the inner matrix in a single layer, covering the other inner matrix on the surface of the high-thermal-conductivity particle materials for fixation, respectively covering the two outer matrixes on the two sides of the inner matrix for fixation, and then densifying the obtained composite layer by adopting rapid pressure sintering, wherein the sintering temperature is 900-1800 ℃, the heat preservation time is 5-30min, the sintering pressure is 10-100MPa, and the sintering environment is vacuum, nitrogen or argon;
and S4, thinning and grinding the sheet ceramic substrate obtained by sintering to reduce the thickness of the outer matrix to 0-1mm, thus obtaining the ceramic substrate.
2. The method as claimed in claim 1, wherein the primary and secondary substrate materials have a particle size of 1nm-200 μm, and the high thermal conductivity particle material has a particle size of 100 μm-2000 μm.
3. The method according to claim 1, wherein the single-layer closely-arranged high thermal conductivity particulate material in step S3 accounts for 20% to 50% of the total volume of the composite layer, and the high thermal conductivity particulate material accounts for 40% to 70% of the total volume of the ceramic substrate after the thinning and grinding in step S4.
4. According to claim 1The method for preparing a ceramic substrate, wherein the auxiliary substrate material comprises 20wt% 2 O 3 ，10wt％MgO，55wt％SiO 2 ，5wt％ZnO，10wt％Bi 2 O 3 Or 10wt% of MgO,45wt% of SiO 2 ,5wt％CaO,10wt％B 2 O 3 ,30wt％Al 2 O 3 Or 30wt% of B 2 O 3 ,40wt％Bi 2 O 3 ，10wt％Li 2 O,20wt％SiO 2 。
5. The method of claim 1, wherein in step S1, the volume percentage of the material of the main substrate is 60% to 100%.
6. The method for preparing a ceramic substrate according to claim 1, wherein in the steps S1 and S2, absolute ethyl alcohol is used as a ball milling solvent, high-purity zirconia balls are used as grinding balls during ball milling, the mass ratio of the powder material to the absolute ethyl alcohol and the grinding balls is 1 (1-3) to (1-10), the ball milling time is 1-15h, and the rotation speed is 150-350r/min.
7. The method of claim 1, wherein in steps S1 and S2, the pressure of cold press forming is 100-250MPa, and the thickness of the green compact is 0.05-2mm.
8. The method of claim 1, wherein in step S4, the grinding is performed by using a 400-1000 mesh resin or metal bond diamond grinding wheel, and the grinding is performed by using a double-side grinder using a 500nm-10 μm diamond grinding fluid.
9. A ceramic substrate produced by the production method according to any one of claims 1 to 8.
10. Use of the ceramic substrate according to claim 9 for the preparation of a thermally conductive and heat dissipating material and/or an abrasion resistant material.
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