CN115276624A - IGBT (insulated Gate Bipolar transistor) driving circuit of electromagnetic heating equipment and electromagnetic heating equipment - Google Patents

IGBT (insulated Gate Bipolar transistor) driving circuit of electromagnetic heating equipment and electromagnetic heating equipment Download PDF

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Publication number
CN115276624A
CN115276624A CN202210670613.0A CN202210670613A CN115276624A CN 115276624 A CN115276624 A CN 115276624A CN 202210670613 A CN202210670613 A CN 202210670613A CN 115276624 A CN115276624 A CN 115276624A
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China
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circuit
sub
bias
driving
control
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CN202210670613.0A
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Inventor
陈劲锋
刘春光
彭军
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Shenzhen Chk Co ltd
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Shenzhen Chk Co ltd
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Priority to CN202210670613.0A priority Critical patent/CN115276624A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08108—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in thyristor switches
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J27/00—Cooking-vessels
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J27/00—Cooking-vessels
    • A47J27/08—Pressure-cookers; Lids or locking devices specially adapted therefor
    • A47J27/086—Pressure-cookers; Lids or locking devices specially adapted therefor with built-in heating means
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J36/00—Parts, details or accessories of cooking-vessels
    • A47J36/24—Warming devices
    • A47J36/2483—Warming devices with electrical heating means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
    • F24C7/00—Stoves or ranges heated by electric energy
    • F24C7/08—Arrangement or mounting of control or safety devices
    • F24C7/082—Arrangement or mounting of control or safety devices on ranges, e.g. control panels, illumination
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

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  • Engineering & Computer Science (AREA)
  • Food Science & Technology (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electronic Switches (AREA)

Abstract

The invention relates to the technical field of electromagnetic heating, and discloses an IGBT (insulated gate bipolar transistor) driving circuit of electromagnetic heating equipment and the electromagnetic heating equipment. The circuit comprises a control circuit, a bias adjusting circuit, a driving circuit and an IGBT tube; the control circuit is used for outputting a first control signal and a second control signal; the driving circuit receiving the first control signal enables the IGBT tube to work in an amplification conduction state or to be in saturation conduction after amplification conduction; the bias adjusting circuit receiving the second control signal is used for providing a bias signal for the driving circuit, and the driving circuit receiving the first control signal and the bias signal of the bias adjusting circuit enables the IGBT to work in a saturation conducting state or to be conducted after amplification conduction and saturation conduction. The invention adjusts the driving signal of the driving circuit through the configured bias adjusting circuit, realizes two different modes of driving the IGBT tube, can adapt to various heating power requirements of electromagnetic heating equipment, and reduces conduction loss.

Description

IGBT (insulated Gate Bipolar transistor) driving circuit of electromagnetic heating equipment and electromagnetic heating equipment
Technical Field
The invention relates to the technical field of electromagnetic heating, in particular to an IGBT (insulated gate bipolar transistor) driving circuit of electromagnetic heating equipment and the electromagnetic heating equipment.
Background
In the prior art, IH heating products such as an electromagnetic oven, an IH electric cooker, a pressure cooker and the like mostly adopt a single-tube IGBT tube scheme due to cost reasons. Under the high-power or low-power working state, the IGBT tube is switched on under the non-zero voltage due to insufficient input energy during resonance, the conduction voltage is high, the instantaneous conduction current is large, and the IGBT can be overheated and damaged by an explosive machine. When pot detection and power starting are carried out, the collector of the IGBT tube is directly 1.4 times of the mains supply high voltage, the conduction voltage is higher, the instant conduction current is larger, and in a high-power working state, the instant conduction current can reach more than 150A and exceeds the specification range of the IGBT, so that great explosion risk exists.
Disclosure of Invention
The present invention is directed to an IGBT driving circuit for an electromagnetic heating apparatus and an electromagnetic heating apparatus, so as to solve one or more technical problems in the prior art and provide at least one of the advantages.
In a first aspect, an IGBT driving circuit of an electromagnetic heating device is provided, which includes a control circuit, a bias adjusting circuit, a driving circuit, and an IGBT tube;
the control circuit is provided with a first control end and a second control end, the first control end is connected with the driving circuit, the second control end is connected with the bias adjusting circuit, and the control circuit is used for outputting a first control signal through the first control end and outputting a second control signal through the second control end;
the driving circuit is connected with the grid electrode of the IGBT tube, receives the first control signal and is used for outputting the first driving signal to the grid electrode of the IGBT tube so that the IGBT tube works in an amplification conduction state or is in saturation conduction after amplification conduction;
the bias adjusting circuit is connected with the driving circuit, receives the second control signal and is used for providing the bias signal for the driving circuit, so that the driving circuit receiving the first control signal and the bias signal of the bias adjusting circuit outputs the second driving signal to the grid electrode of the IGBT tube, and the IGBT tube works in a saturation conduction state or is amplified firstly and then is conducted in a saturation mode.
The initial voltage of the first driving signal is smaller than the initial voltage of the second driving signal.
According to one embodiment of the present invention, a driving circuit includes a level shift sub-circuit, a first switch sub-circuit, a second switch sub-circuit, a first bias sub-circuit, and a second bias sub-circuit;
the triggering end of the level conversion sub-circuit is connected with the first control end, the first end of the level conversion sub-circuit is connected with the triggering end of the first switch sub-circuit and the triggering end of the second switch sub-circuit, and the second end of the level conversion sub-circuit is grounded;
the first switch sub-circuit is connected with direct current voltage, the first switch sub-circuit and the second switch sub-circuit form a push-pull structure and are connected with a grid electrode of an IGBT (insulated gate bipolar transistor), one end of the first bias sub-circuit is connected with the direct current voltage, the other end of the first bias sub-circuit is connected with a trigger end of the first switch sub-circuit, one end of the second bias sub-circuit is connected with a trigger end of the second switch sub-circuit, and the other end of the second bias sub-circuit is grounded.
According to one embodiment of the present invention, the first switching sub-circuit comprises a first transistor, and the second switching sub-circuit comprises a second transistor;
the base electrode of the first triode is connected with the level conversion sub-circuit, the collector electrode of the first triode is connected with direct-current voltage, the emitter electrode of the first triode is connected with the grid electrode of the IGBT device and the emitter electrode of the second triode, one end of the first biasing sub-circuit is connected with the base electrode of the first triode, the other end of the first biasing sub-circuit is connected with the collector electrode of the first triode, and the first triode is an NPN type triode;
the base electrode of the second triode is connected with the level conversion sub-circuit, the collector electrode of the second triode is grounded, one end of the second biasing sub-circuit is connected with the base electrode of the second triode, the other end of the second biasing sub-circuit is grounded, and the second triode is a PNP type triode.
According to one embodiment of the present invention, a level converting sub-circuit includes a third switching sub-circuit and a third biasing sub-circuit;
the trigger end of the third switch sub-circuit is connected with the first control end, the first end of the third switch sub-circuit is connected with the trigger end of the first switch sub-circuit and the trigger end of the second switch sub-circuit, the second end of the third switch sub-circuit is grounded, one end of the third bias sub-circuit is connected with the direct-current voltage, and the other end of the third bias sub-circuit is connected with the trigger end of the third switch sub-circuit.
According to one embodiment of the present invention, a bias adjustment circuit includes a fourth switch sub-circuit and a fourth bias sub-circuit;
the trigger end of the fourth switch sub-circuit is connected with the second control end, the first end of the fourth switch sub-circuit is connected with the direct-current voltage, and the second end of the fourth switch sub-circuit is connected with the driving circuit and provides a bias signal for the driving circuit when receiving the second control signal;
one end of the fourth bias sub-circuit is connected with the first end of the fourth switch sub-circuit, and the other end of the fourth bias sub-circuit is connected with the trigger end of the fourth switch sub-circuit.
According to one embodiment of the present invention, the bias adjusting circuit includes a fourth switching sub-circuit, a fourth biasing sub-circuit, and a fifth switching sub-circuit;
the trigger end of the fifth switch sub-circuit is connected with the second control end, the first end of the fifth switch sub-circuit is connected with the trigger end of the fourth switch sub-circuit, the second end of the fifth switch sub-circuit is grounded, the first end of the fourth switch sub-circuit is connected with direct-current voltage, the second end of the fourth switch sub-circuit is connected with the driving circuit, and when the second control signal is received, the bias signal is provided for the driving circuit;
one end of the fourth bias sub-circuit is connected with the first end of the fourth switch sub-circuit, and the other end of the fourth bias sub-circuit is connected with the trigger end of the fourth switch sub-circuit.
According to one embodiment of the present invention, the voltage at which the driving circuit outputs the first driving signal gradually increases from the initial voltage of the first driving signal, and the voltage at which the driving circuit outputs the second driving signal gradually increases from the initial voltage of the second driving signal.
According to one embodiment of the invention, the control circuit comprises a control chip and a current detection sub-circuit;
the control chip outputs a first control signal to the drive circuit through the first control end, and the current detection sub-circuit outputs a second control signal to the bias adjusting circuit through the second control end.
According to one embodiment of the invention, the control circuit outputs the first control signal and the second control signal when the electromagnetic heating apparatus is in the first power state and outputs the first control signal when the electromagnetic heating apparatus is in the second power state;
wherein the power of the first power state is greater than the power of the second power state.
In a second aspect, an electromagnetic heating apparatus is provided, comprising the IGBT driving circuit of the electromagnetic heating apparatus of the first aspect.
The invention has the beneficial effects that: in the process of driving the IGBT tube, the driving signal of the driving circuit is adjusted through the configured bias adjusting circuit, so that two different modes for driving the IGBT tube are realized, the current at the switching-on moment of the IGBT tube can be limited, the IH continuous low-power heating work is realized, the driving starting voltage bias of the IGBT light is controlled to be improved, and the heating performance of the electromagnetic heating equipment is improved in a high-power working environment.
Drawings
Fig. 1 is one of schematic circuit structures of an IGBT driving circuit of an electromagnetic heating apparatus provided by the present invention.
Fig. 2 is a second schematic circuit diagram of an IGBT driving circuit of the electromagnetic heating apparatus provided in the present invention.
Fig. 3 is a third schematic circuit diagram of the IGBT driving circuit of the electromagnetic heating apparatus provided in the present invention.
Fig. 4 is a fourth schematic circuit diagram of the IGBT driving circuit of the electromagnetic heating apparatus provided in the present invention.
Fig. 5 is one of schematic driving waveforms of an IGBT driving circuit of the electromagnetic heating apparatus provided by the present invention.
Fig. 6 is a second schematic diagram of a driving waveform of an IGBT driving circuit of the electromagnetic heating apparatus provided by the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the present invention will be further described with reference to the embodiments and the accompanying drawings.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings only for the convenience of description of the present invention and simplification of the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, a plurality of the terms are not limited to a certain number, and a plurality of the terms are two or more, and the terms larger, smaller, larger, and the like are understood to include the number of the terms, and the terms larger, smaller, and the like are understood to include the number of the terms. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated. Additionally, appearing throughout and/or representing three juxtapositions, for example, A and/or B represents a solution satisfied by A, a solution satisfied by B, or a solution satisfied by both A and B.
In the description of the present invention, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, which may include other elements not expressly listed, in addition to those listed.
According to a first aspect of the present invention, there is provided an IGBT driving circuit of an electromagnetic heating apparatus.
As shown in fig. 1, the IGBT driving circuit of the electromagnetic heating apparatus according to the embodiment of the present invention includes a control circuit 100, a bias adjusting circuit 200, a driving circuit 300, and an IGBT tube 400.
The control circuit 100 has a first control terminal P1 and a second control terminal P2, the first control terminal P1 is connected to the driving circuit 300, the second control terminal P2 is connected to the bias adjusting circuit 200, the driving circuit 300 is connected to the gate of the IGBT 400, and the bias adjusting circuit 200 is connected to the driving circuit 300.
In practical use, the control circuit 100 is configured to output a first control signal through the first control terminal P1 and output a second control signal through the second control terminal P2, the driving circuit 300 receiving the first control signal is configured to output the first driving signal to the gate of the IGBT tube 400, so that the IGBT tube 400 operates in an amplification conduction state or is in saturation conduction after amplification conduction, the bias adjusting circuit 200 receiving the second control signal is configured to provide a bias signal to the driving circuit 300, so that the driving circuit 300 receiving the first control signal and the bias signal of the bias adjusting circuit 200 outputs the second driving signal to the gate of the IGBT tube 400, and the IGBT tube 400 operates in a saturation conduction state or is in saturation conduction after amplification conduction. The initial voltage of the first driving signal is smaller than the initial voltage of the second driving signal.
In this embodiment, the voltage of the first driving signal output by the driving circuit 300 gradually increases from the initial voltage of the first driving signal, and the voltage of the second driving signal output by the driving circuit 300 gradually increases from the initial voltage of the second driving signal. Preferably, the voltage of the first driving signal and the voltage of the second driving signal are increased step by RC charging and discharging.
As shown in fig. 5 and fig. 6, in the process of driving the IGBT tube 400, the IGBT driving circuit of the electromagnetic heating device provided by the present invention adjusts the driving signal of the driving circuit 300 by configuring the bias adjusting circuit 200, so as to implement two different ways of driving the IGBT tube 400. In a first driving mode, the first control terminal P1 outputs a first control signal, the second control terminal P2 does not output a second control signal, the bias adjusting circuit 200 does not work, the driving circuit 300 receiving the first control signal outputs the first driving signal to the gate of the IGBT tube 400, the IGBT tube 400 starts after receiving the first driving signal with a lower initial voltage value, and as the voltage value of the first driving signal gradually increases, the IGBT tube 400 works in an amplified conducting state, so that the current at the turn-on moment of the IGBT tube 400 is limited, and the switching power loss of the IGBT tube 400 is reduced. In a second driving mode, the first control terminal P1 outputs a first control signal, the second control terminal P2 outputs a second control signal, the bias adjusting circuit 200 operates, the bias adjusting circuit 200 receiving the second control signal provides a bias signal to the driving circuit 300, so that the driving circuit 300 receiving the first control signal and the bias signal of the bias adjusting circuit 200 outputs a second driving signal to the gate of the IGBT tube 400, under the action of the bias signal, the initial voltage value of the second driving signal is higher, the IGBT tube 400 starts after receiving the second driving signal with the higher initial voltage value, and as the voltage value of the second driving signal gradually increases, the IGBT tube 400 operates in a saturated conduction state, so as to reduce the conduction loss of the IGBT tube 400, and improve the heating performance of the electromagnetic heating device.
In actual use, the control circuit 100 controls the driving circuit 300 and the bias adjusting circuit 200 according to the power state of the electromagnetic heating device, so as to select a corresponding driving mode.
Specifically, the control circuit 100 outputs the first control signal and the second control signal when the electromagnetic heating apparatus is in the first power state and outputs the first control signal when the electromagnetic heating apparatus is in the second power state. Wherein the power of the first power state is greater than the power of the second power state.
Preferably, in an embodiment, the first power state is greater than or equal to 50% of the rated power of the electromagnetic heating device and the second power state is less than 50% of the rated power of the electromagnetic heating device.
The following describes a specific structure of the IGBT driving circuit of the electromagnetic heating apparatus provided by the present invention.
As shown in fig. 2, in one embodiment, the driving circuit 300 includes a level shifting sub-circuit 360, a first switching sub-circuit 310, a second switching sub-circuit 320, a first biasing sub-circuit 311, and a second biasing sub-circuit 321. The trigger terminal of the level shift sub-circuit 360 is connected to the first control terminal P1, the first terminal of the level shift sub-circuit 360 is connected to the trigger terminal of the first switch sub-circuit 310 and the trigger terminal of the second switch sub-circuit 320, and the second terminal of the level shift sub-circuit 360 is grounded; the first switch sub-circuit 310 is connected to a dc voltage VCC, the first switch sub-circuit 310 and the second switch sub-circuit 320 form a push-pull structure and are connected to the gate of the IGBT tube 400, one end of the first bias sub-circuit 311 is connected to the dc voltage VCC, the other end of the first bias sub-circuit 311 is connected to the trigger terminal of the first switch sub-circuit 310, one end of the second bias sub-circuit 321 is connected to the trigger terminal of the second switch sub-circuit 320, and the other end of the second bias sub-circuit 321 is grounded.
More specifically, the first switching sub-circuit 310 includes a first transistor Q1, and the second switching sub-circuit 320 includes a second transistor Q2. The base electrode of the first triode Q1 is connected with the level switching sub-circuit 360, the collector electrode of the first triode Q1 is connected with the direct-current voltage VCC, the emitter electrode of the first triode Q1 is connected with the grid electrode of the IGBT device and the emitter electrode of the second triode Q2, one end of the first biasing sub-circuit 311 is connected with the base electrode of the first triode Q1, the other end of the first biasing sub-circuit 311 is connected with the collector electrode of the first triode Q1, and the first triode Q1 is an NPN type triode; the base of the second triode Q2 is connected to the level shift sub-circuit 360, the collector of the second triode Q2 is grounded, one end of the second bias sub-circuit 321 is connected to the base of the second triode Q2, the other end of the second bias sub-circuit 321 is grounded, and the second triode Q2 is a PNP type triode.
The first bias sub-circuit 311 includes a first bias resistor R1, the second bias sub-circuit 321 includes a second bias resistor R2 and a bias capacitor C1, one end of the first bias resistor R1 is connected to the base of the first transistor Q1, the other end of the first bias resistor R1 is connected to the collector of the first transistor Q1, one end of the bias capacitor C1 is connected to the base of the second transistor Q2, the other end of the bias capacitor C1 is connected to one end of the second bias resistor R2, and the other end of the second bias resistor R2 is grounded.
Further, the level shift sub-circuit 360 includes a third switch sub-circuit 330 and a third bias sub-circuit 331. The trigger terminal of the third switch sub-circuit 330 is connected to the first control terminal P1, the first terminal of the third switch sub-circuit 330 is connected to the trigger terminals of the first switch sub-circuit 310 and the second switch sub-circuit 320, the second terminal of the third switch sub-circuit 330 is grounded, one terminal of the third bias sub-circuit 331 is connected to the dc voltage VCC, and the other terminal of the third bias sub-circuit 331 is connected to the trigger terminal of the third switch sub-circuit 330.
More specifically, the third switch sub-circuit 330 includes a third transistor Q3, the third bias sub-circuit 331 includes a third bias resistor R3, a base of the third transistor Q3 is connected to the first control terminal P1, a first end of the third transistor Q3 is connected to the base of the first transistor Q1 and the base of the second transistor Q2, an emitter of the third transistor Q3 is grounded, one end of the third bias resistor R3 is connected to the dc voltage VCC, and the other end of the third bias resistor R3 is connected to the base of the third transistor Q3. In this embodiment, the third transistor Q3 is an NPN transistor.
The level shift sub-circuit 360 receives the first control signal outputted by the control circuit 100, the level of the first control signal varies alternately, and the conducting state of the third switch sub-circuit 330 varies with the level variation of the first control signal, so that the first switch sub-circuit 310 and the second switch sub-circuit 320 are conducted alternately. Specifically, when the first control signal is at a low level, the third switch sub-circuit 330 is turned off, so that the first switch sub-circuit 310 is turned on and the second switch sub-circuit 320 is turned off, and the driving circuit 300 outputs the driving signal, whereas when the first control signal is at a high level, the third switch sub-circuit 330 is turned on, so that the first switch sub-circuit 310 is turned off and the second switch sub-circuit 320 is turned on, and the driving circuit 300 does not output the driving signal.
As shown in fig. 2, in one embodiment, the bias adjustment circuit 200 includes a fourth switch subcircuit 210 and a fourth bias subcircuit 211. A trigger end of the fourth switch sub-circuit 210 is connected to the second control end P2, a first end of the fourth switch sub-circuit 210 is connected to the dc voltage VCC, a second end of the fourth switch sub-circuit 210 is connected to the driving circuit 300, and when receiving the second control signal, the second control terminal provides a bias signal to the driving circuit 300; one end of the fourth bias sub-circuit 211 is connected to the first end of the fourth switch sub-circuit 210, and the other end of the fourth bias sub-circuit 211 is connected to the trigger end of the fourth switch sub-circuit 210.
More specifically, the fourth switch sub-circuit 210 includes a fourth transistor Q4, the fourth bias sub-circuit 211 includes a fourth bias resistor R4, the base of the fourth transistor Q4 is connected to the second control terminal P2, the collector of the fourth transistor Q4 is connected to the dc voltage VCC, the emitter of the fourth transistor Q4 is connected to the driving circuit 300, one end of the fourth bias resistor R4 is connected to the collector of the fourth transistor Q4, and the other end of the fourth bias resistor R4 is connected to the base of the fourth transistor Q4. The fourth transistor Q4 is an NPN transistor.
In actual use, the fourth switch sub-circuit 210 is turned on when the second control terminal P2 outputs the second control signal, the turned-on fourth switch sub-circuit 210 is connected in parallel with the first bias sub-circuit 311, the fourth switch sub-circuit 210 and the first bias sub-circuit 311 together provide a bias signal for the first switch sub-circuit 310, and the resistance value of the resistor after parallel connection is reduced, so that the bias signal is increased, and the driving signal output by the first switch sub-circuit 310 is changed from the first driving signal to the second driving signal, otherwise, the fourth switch sub-circuit 210 is turned off when the second control terminal P2 does not output the second control signal, and the first bias sub-circuit 311 alone provides a bias signal for the first switch sub-circuit 310, so that the first switch sub-circuit 310 outputs the first driving signal.
In another embodiment, as shown in fig. 3, the bias adjustment circuit 200 includes a fourth switching sub-circuit 210, a fourth biasing sub-circuit 211, and a fifth switching sub-circuit 220. The trigger end of the fifth switch sub-circuit 220 is connected to the second control end P2, the first end of the fifth switch sub-circuit 220 is connected to the trigger end of the fourth switch sub-circuit 210, the second end of the fifth switch sub-circuit 220 is grounded, the first end of the fourth switch sub-circuit 210 is connected to the dc voltage VCC, the second end of the fourth switch sub-circuit 210 is connected to the driving circuit 300, and when receiving the second control signal, the driving circuit 300 is provided with a bias signal; one end of the fourth bias sub-circuit 211 is connected to the first end of the fourth switch sub-circuit 210, and the other end of the fourth bias sub-circuit 211 is connected to the trigger end of the fourth switch sub-circuit 210.
More specifically, the fourth switch sub-circuit 210 includes a fourth triode Q4, the fourth bias sub-circuit 211 includes a fourth bias resistor R4, the fifth switch sub-circuit 220 includes a fifth triode Q5, the base of the fifth triode Q5 is connected to the second control terminal P2, the base of the fourth triode Q4 is connected to the collector of the fifth triode Q5, the emitter of the fifth triode Q5 is grounded, the collector of the fourth triode Q4 is connected to the dc voltage VCC, the emitter of the fourth triode Q4 is connected to the driving circuit 300, one end of the fourth bias resistor R4 is connected to the collector of the fourth triode Q4, and the other end of the fourth bias resistor R4 is connected to the base of the fourth triode Q4. The fourth triode Q4 and the fifth triode Q5 are both NPN-type triodes.
In actual use, the fifth switch sub-circuit 220 is turned on when the second control terminal P2 outputs the second control signal, the turned-on fifth switch sub-circuit 220 pulls down the voltage of the trigger terminal of the fourth switch sub-circuit 210 to turn off the fourth switch sub-circuit 210, the first bias sub-circuit 311 alone provides the bias signal for the first switch sub-circuit 310 to make the first switch sub-circuit 310 output the first drive signal, otherwise, the fifth switch sub-circuit 220 is turned off, the fourth switch sub-circuit 210 is turned on, the turned-on fourth switch sub-circuit 210 is connected in parallel with the first bias sub-circuit 311, the fourth switch sub-circuit 210 and the first bias sub-circuit 311 together provide the bias signal for the first switch sub-circuit 310, and the bias signal is increased due to the resistance value reduction after the parallel connection, so that the drive signal output by the first switch sub-circuit 310 is changed from the first drive signal to the second drive signal.
As shown in FIG. 4, in one embodiment, the control circuit 100 includes a control chip 110 and a current detection subcircuit 120. The control chip 110 outputs a first control signal to the driving circuit 300 through the first control terminal P1, and the current detection sub-circuit 120 outputs a second control signal to the bias adjustment circuit 200 through the second control terminal P2. The control chip 110 drives the IGBT tube 400 through the driving circuit 300, and the current detection sub-circuit 120 changes the driving mode of the driving circuit 300 driving the IGBT tube 400 by detecting the current of the electromagnetic heating device.
The IGBT driving circuit of the electromagnetic heating equipment provided by the invention adjusts the driving signal of the driving circuit 300 through the configured bias adjusting circuit 200 in the process of driving the IGBT tube 400, thereby realizing two different modes of driving the IGBT tube 400, limiting the current at the turn-on moment of the IGBT tube 400, realizing IH continuous low-power heating work, controlling the driving starting voltage bias of the IGBT light to be improved, and improving the heating performance of the electromagnetic heating equipment in a high-power working environment.
According to a second aspect of the present invention, an electromagnetic heating apparatus is provided.
The electromagnetic heating device comprises the IGBT driving circuit of the electromagnetic heating device of the first aspect, and the electromagnetic heating device of this embodiment adopts all the technical solutions of all the embodiments described above, and has at least all the beneficial effects brought by the technical solutions of the embodiments described above.
The electromagnetic heating equipment can be household electromagnetic heating products such as an electromagnetic oven, an electromagnetic rice cooker or an electromagnetic pressure cooker.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and shall cover the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims (10)

1. An IGBT driving circuit of electromagnetic heating equipment is characterized by comprising a control circuit, a bias adjusting circuit, a driving circuit and an IGBT tube;
the control circuit is provided with a first control end and a second control end, the first control end is connected with the driving circuit, the second control end is connected with the bias adjusting circuit, and the control circuit is used for outputting a first control signal through the first control end and outputting a second control signal through the second control end;
the driving circuit is connected with the grid electrode of the IGBT tube, and the driving circuit receiving the first control signal is used for outputting the first driving signal to the grid electrode of the IGBT tube so that the IGBT tube works in an amplification conduction state or is in saturation conduction after amplification conduction;
the bias adjusting circuit is connected with the driving circuit, the bias adjusting circuit receiving the second control signal is used for providing a bias signal for the driving circuit, the driving circuit receiving the first control signal and the bias signal of the bias adjusting circuit outputs the second driving signal to a grid electrode of the IGBT tube, and the IGBT tube works in a saturation conducting state or is in saturation conducting after amplification conducting;
the initial voltage of the first driving signal is smaller than the initial voltage of the second driving signal.
2. The IGBT driving circuit of an electromagnetic heating apparatus according to claim 1, characterized in that the driving circuit includes a level conversion sub-circuit, a first switch sub-circuit, a second switch sub-circuit, a first bias sub-circuit, and a second bias sub-circuit;
the trigger end of the level conversion sub-circuit is connected with a first control end, the first end of the level conversion sub-circuit is connected with the trigger end of the first switch sub-circuit and the trigger end of the second switch sub-circuit, and the second end of the level conversion sub-circuit is grounded;
the first switch sub-circuit is connected with direct-current voltage, the first switch sub-circuit and the second switch sub-circuit form a push-pull structure and are connected with a grid electrode of an IGBT (insulated gate bipolar transistor), one end of the first bias sub-circuit is connected with the direct-current voltage, the other end of the first bias sub-circuit is connected with a trigger end of the first switch sub-circuit, one end of the second bias sub-circuit is connected with a trigger end of the second switch sub-circuit, and the other end of the second bias sub-circuit is grounded.
3. The IGBT driver circuit for an electromagnetic heating apparatus according to claim 2, wherein the first switching sub-circuit comprises a first transistor, and the second switching sub-circuit comprises a second transistor;
the base electrode of the first triode is connected with a level conversion sub-circuit, the collector electrode of the first triode is connected with direct-current voltage, the emitter electrode of the first triode is connected with the grid electrode of an IGBT device and the emitter electrode of a second triode, one end of the first biasing sub-circuit is connected with the base electrode of the first triode, the other end of the first biasing sub-circuit is connected with the collector electrode of the first triode, and the first triode is an NPN type triode;
the base electrode of the second triode is connected with the level conversion sub-circuit, the collector electrode of the second triode is grounded, one end of the second biasing sub-circuit is connected with the base electrode of the second triode, the other end of the second biasing sub-circuit is grounded, and the second triode is a PNP type triode.
4. The IGBT driver circuit for an electromagnetic heating apparatus according to claim 2, wherein the level conversion sub-circuit includes a third switching sub-circuit and a third bias sub-circuit;
the trigger end of the third switch sub-circuit is connected with the first control end, the first end of the third switch sub-circuit is connected with the trigger end of the first switch sub-circuit and the trigger end of the second switch sub-circuit, the second end of the third switch sub-circuit is grounded, one end of the third bias sub-circuit is connected with the direct-current voltage, and the other end of the third bias sub-circuit is connected with the trigger end of the third switch sub-circuit.
5. The IGBT drive circuit of an electromagnetic heating apparatus according to claim 1, wherein the bias adjustment circuit includes a fourth switch sub-circuit and a fourth bias sub-circuit;
the trigger end of the fourth switch sub-circuit is connected with the second control end, the first end of the fourth switch sub-circuit is connected with direct-current voltage, and the second end of the fourth switch sub-circuit is connected with the driving circuit and provides a bias signal for the driving circuit when receiving a second control signal;
one end of the fourth bias sub-circuit is connected with the first end of the fourth switch sub-circuit, and the other end of the fourth bias sub-circuit is connected with the trigger end of the fourth switch sub-circuit.
6. The IGBT drive circuit of an electromagnetic heating apparatus according to claim 1, characterized in that the bias adjustment circuit comprises a fourth switching sub-circuit, a fourth biasing sub-circuit and a fifth switching sub-circuit;
the trigger end of the fifth switch sub-circuit is connected with the second control end, the first end of the fifth switch sub-circuit is connected with the trigger end of the fourth switch sub-circuit, the second end of the fifth switch sub-circuit is grounded, the first end of the fourth switch sub-circuit is connected with direct-current voltage, the second end of the fourth switch sub-circuit is connected with the driving circuit, and when a second control signal is received, a bias signal is provided for the driving circuit;
one end of the fourth bias sub-circuit is connected with the first end of the fourth switch sub-circuit, and the other end of the fourth bias sub-circuit is connected with the trigger end of the fourth switch sub-circuit.
7. The IGBT driving circuit of an electromagnetic heating apparatus according to claim 1, wherein the driving circuit outputs the first driving signal with a voltage gradually increasing from an initial voltage of the first driving signal, and the driving circuit outputs the second driving signal with a voltage gradually increasing from an initial voltage of the second driving signal.
8. The IGBT driving circuit of the electromagnetic heating device according to any one of claims 1 to 7, characterized in that the control circuit comprises a control chip and a current detection sub-circuit;
the control chip outputs a first control signal to the drive circuit through the first control end, and the current detection sub-circuit outputs a second control signal to the bias adjusting circuit through the second control end.
9. The IGBT driver circuit for an electromagnetic heating apparatus according to any one of claims 1 to 7, wherein the control circuit outputs the first control signal and the second control signal when the electromagnetic heating apparatus is in the first power state and outputs the first control signal when the electromagnetic heating apparatus is in the second power state;
wherein the power of the first power state is greater than the power of the second power state.
10. An electromagnetic heating apparatus, characterized by comprising an IGBT drive circuit of the electromagnetic heating apparatus according to any one of claims 1 to 9.
CN202210670613.0A 2022-06-14 2022-06-14 IGBT (insulated Gate Bipolar transistor) driving circuit of electromagnetic heating equipment and electromagnetic heating equipment Pending CN115276624A (en)

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CN202210670613.0A CN115276624A (en) 2022-06-14 2022-06-14 IGBT (insulated Gate Bipolar transistor) driving circuit of electromagnetic heating equipment and electromagnetic heating equipment

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Application Number Priority Date Filing Date Title
CN202210670613.0A CN115276624A (en) 2022-06-14 2022-06-14 IGBT (insulated Gate Bipolar transistor) driving circuit of electromagnetic heating equipment and electromagnetic heating equipment

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CN115276624A true CN115276624A (en) 2022-11-01

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