CN211047278U - Circuit for integrating multiple insulated gate bipolar transistors - Google Patents
Circuit for integrating multiple insulated gate bipolar transistors Download PDFInfo
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- CN211047278U CN211047278U CN201922181374.9U CN201922181374U CN211047278U CN 211047278 U CN211047278 U CN 211047278U CN 201922181374 U CN201922181374 U CN 201922181374U CN 211047278 U CN211047278 U CN 211047278U
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- gate bipolar
- bipolar transistors
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Abstract
The utility model discloses an integrated a plurality of insulated gate bipolar transistor's circuit. The circuit integrating the plurality of insulated gate bipolar transistors comprises a main control circuit and a synchronous circuit. The main control circuit comprises a direct-current power supply, at least two insulated gate bipolar transistors, at least two induction heating circuits arranged corresponding to the insulated gate bipolar transistors, and a driving circuit connected with the at least two insulated gate bipolar transistors. The synchronous circuit comprises a resonance end, a back pressure end corresponding to the induction heating circuit and a main control chip connected with the driving circuit. The circuit integrating the plurality of insulated gate bipolar transistors integrates a driving circuit, the driving circuit can drive the plurality of IGBTs only by one driving signal, the area of a PCB is reduced, the anti-jamming capability is enhanced, and abnormal opening is avoided.
Description
Technical Field
The utility model relates to an including insulated gate bipolar transistor's circuit among induction heating's the electrical apparatus, especially relate to an integrated circuit of a plurality of insulated gate bipolar transistor.
Background
In recent years, induction heating household appliances, such as induction cookers and electric cookers, are popular among users due to their characteristics of high temperature rise rate, good heating uniformity, high efficiency, and the like. The power circuit of the existing novel household appliance adopts a parallel resonance topology, takes an Insulated Gate Bipolar Transistor (IGBT) as a switch, and has the characteristics of small driving power, low saturation voltage and the like. The special chip of the novel household appliance generally only has one IGBT driving port, and one driving port can only send one IGBT driving signal, so that the switching function of driving a plurality of IGBTs to be switched on or switched off can not be realized.
In addition, the existing IGBT needs a driving circuit built outside and various protection circuits such as voltage, current and temperature, so that the wiring difficulty is increased, and the anti-interference capability is poor.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to provide an integrated a plurality of insulated gate bipolar transistor's circuit, integrated drive circuit, drive circuit only needs a drive signal just can drive a plurality of IGBT.
In order to solve the technical problem, the utility model adopts the following technical scheme:
the utility model provides an integrate a plurality of insulated gate bipolar transistor's circuit. The circuit integrating the plurality of insulated gate bipolar transistors comprises a main control circuit and a synchronous circuit, wherein the main control circuit comprises a direct-current power supply, at least two insulated gate bipolar transistors, at least two induction heating circuits correspondingly arranged with the insulated gate bipolar transistors and a driving circuit connected with the at least two insulated gate bipolar transistors, and the synchronous circuit comprises a resonance end, a back-pressure end corresponding to the induction heating circuits and a main control chip connected with the driving circuit.
Optionally, for the circuit integrating a plurality of insulated gate bipolar transistors, the driving circuit comprises a 3-8 line decoder.
Optionally, for the circuit integrating multiple insulated gate bipolar transistors, a pin led out from a gate of the insulated gate bipolar transistor is an input driving signal pin and is connected with the driving circuit.
Optionally, the circuit integrating the plurality of insulated gate bipolar transistors further comprises a back-voltage protection circuit.
Optionally, for the circuit integrating a plurality of insulated gate bipolar transistors, the back-voltage protection circuit comprises a comparator.
Optionally, for the circuit integrating multiple insulated gate bipolar transistors, a pin led out from between a collector and an emitter of the insulated gate bipolar transistor is a reverse-voltage protection pin and is connected with the reverse-voltage protection circuit.
Optionally, the circuit integrating a plurality of insulated gate bipolar transistors further comprises an overcurrent protection circuit.
Optionally, for the circuit integrating a plurality of insulated gate bipolar transistors, the overcurrent protection circuit includes a sampling resistor for collecting a current between a collector and an emitter of the insulated gate bipolar transistor.
Optionally, for the circuit integrating a plurality of insulated gate bipolar transistors, the over-current protection circuit further comprises an amplifying circuit and a comparator.
Optionally, for the circuit integrating a plurality of insulated gate bipolar transistors, a pin led out from between a gate and an emitter of the insulated gate bipolar transistor is an overcurrent protection pin and is connected with the overcurrent protection circuit.
Compared with the prior art, the utility model discloses the main advantage of technical scheme as follows:
the utility model discloses integrated a plurality of insulated gate bipolar transistor's circuit has integrated drive circuit, and drive circuit only needs a drive signal just can drive a plurality of IGBT, has reduced Printed circuit board (PCB, Printed Circuit Board)'s area, and the interference killing feature becomes strong moreover, has avoided unusually opening.
Furthermore, the utility model discloses a circuit of integrated a plurality of insulated gate bipolar transistors can use a plurality of IGBTs of main control chip drive, realizes IGBT's independent drive to make induction heating electrical apparatus can realize the heating in different positions of different modes.
Additionally, the utility model discloses integrated a plurality of insulated gate bipolar transistor's circuit can integrate at least one kind of protection circuit in back pressure protection circuit, overcurrent protection circuit and the excess temperature protection circuit etc. has reduced PCB's area, better laying out wiring, and the protection real-time is better, and the reliability is higher.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a schematic structural diagram of a circuit integrating a plurality of igbt according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention can be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
Fig. 1 is a schematic structural diagram of a circuit integrating a plurality of igbt according to an embodiment of the present invention. The circuit integrating a plurality of insulated gate bipolar transistors provided by the embodiment can be used as a control circuit of an induction heating electric appliance.
As shown in fig. 1, the circuit of this embodiment, which integrates a plurality of insulated gate bipolar transistors, includes a main control circuit and a synchronization circuit. The main control circuit includes a dc power supply 110, at least two Insulated Gate Bipolar Transistors (IGBTs), at least two induction heating circuits corresponding to the respective Insulated gate bipolar transistors, and a driving circuit 120 connected to the at least two Insulated gate bipolar transistors. The synchronous circuit comprises a resonance end, a back pressure end corresponding to the induction heating circuit and a main control chip connected with the driving circuit.
The dc power supply 110 is a dc power supply converted from AC power through a circuit of 110 parts.
The driving circuit 120 is integrated inside a circuit in which a plurality of IGBTs are integrated. Because the IGBT is a power device, a large current is required when the IGBT is turned on, and a driver chip or a push-pull circuit is generally used. The driving circuit 120 is integrated inside the circuit integrating the plurality of IGBTs, and only a driving signal is required without externally overlapping a special driving circuit. For a circuit integrating a plurality of IGBTs, the embodiment shows that at least two IGBTs can be driven by the PPG signal of only one main control chip. The circuit integrating the plurality of IGBTs integrates a driving circuit, does not need an external driving circuit, and only needs to supply power to VCC pins of the IGBTs from the outside. The E/COM pin is the emitter (E pole) of the internal IGBT.
Further, the driving circuit 120 may include a 3-8 line decoder.
A pin led out from a gate electrode (G electrode) of the IGBT is an input driving signal pin INN and is connected with a driving circuit.
In the following, a driving circuit will be further described by taking an example in which a circuit integrating a plurality of insulated gate bipolar transistors includes three IGBTs. The driving circuit 120 controls each IGBT to be turned on by enabling. And an S1 pin of the 3-8 line decoder is connected with a PPG pin of the main control chip. The A2 pin of the 3-8 line decoder is connected with the main control chip as an IO port used by EN 2. The A1 pin of the 3-8 line decoder is connected with the main control chip as an IO port used by EN 1. The A0 pin of the 3-8 line decoder is connected with the main control chip as an IO port used by EN 0. An output pin Y0 of the 3-8 line decoder is connected with a first insulated gate bipolar transistor IGBT1, an output pin Y1 of the 3-8 line decoder is connected with a second insulated gate bipolar transistor IGBT2, and an output pin Y2 of the 3-8 line decoder is connected with a third insulated gate bipolar transistor IGBT 3. The specific control scheme is shown in table 1 below. In table 1, "0" represents low, "1" represents high, and "" represents high or low.
When the main control chip works, in order to enable the first insulated gate bipolar transistor IGBT1 to be conducted, a PPG pin of the main control chip is required to output a high level, and the enable pins EN2, EN1 and EN0 are in a state of 000; in order to turn on the second insulated gate bipolar transistor IGBT2, a PPG pin of a main control chip is required to output a high level, and the enable pins EN2, EN1 and EN0 are in a state of 100; to turn on the third IGBT3, the PPG pin of the main control chip is required to output a high level, the enable pins EN2, EN1, and EN0 are in a state of 001, and to turn off any IGBT, the PPG pin of the main control chip is required to be a low level.
TABLE 1
The circuit of this embodiment that integrates a plurality of insulated gate bipolar transistors may also include a protection circuit of an IGBT. The protection circuit may include at least one of a back-voltage protection circuit and an overcurrent protection circuit.
As an alternative implementation, the circuit integrating a plurality of insulated gate bipolar transistors of this embodiment further includes a back-voltage protection circuit 130. The back-voltage protection circuit 130 may include a comparator. The comparator is integrated in the integrated IGBT, the voltage is divided externally, the divided voltage is input to the VEDT pin, and the voltage is compared with the internal comparator. A pin led out from between the collector and the emitter of the insulated gate bipolar transistor is a reverse voltage protection pin VDET and is connected to the reverse voltage protection circuit 130. The back-voltage protection circuit 130 compares with an internal threshold value in the form of external resistance voltage division. The circuit integrating the plurality of IGBTs integrates the reference voltage and the comparator inside, and avoids the reference voltage from being interfered and the comparator circuit from being lapped outside.
As an alternative implementation, the circuit integrating a plurality of insulated gate bipolar transistors of this embodiment further includes an overcurrent protection circuit 140. The overcurrent protection circuit 140 may include a sampling resistor R15 that collects current between the collector (C-pole) and emitter (E-pole) of the igbt. The overcurrent protection circuit 140 may further include an amplification circuit and a comparator. The amplifier Circuit and the comparator are integrated inside the integrated IGBT, which reduces external Circuit connections and reduces the Printed Circuit Board (PCB) layout area. When an overcurrent signal occurs, the IGBT driving signal is directly turned off, and the whole machine stops working. In actual use, the device can also be externally connected with an amplifying circuit and a comparing circuit. The signal is sent to the main control chip. The main control chip controls the IGBT switch. And a pin led out from between the gate electrode and the emitter electrode of the insulated gate bipolar transistor is an overcurrent protection pin CS which is connected with an overcurrent protection circuit. The overcurrent protection circuit collects the current between the collector and the emitter of the IGBT through a sampling resistor R15, and the collected voltage signal is a very small electric signal generally in the mV level. An external amplifier circuit and a comparator are required. The amplifying circuit amplifies the voltage signal, and the comparator compares the voltage signal with a threshold value of overcurrent protection.
The utility model discloses a drive circuit has been integrated to integrated a plurality of insulated gate bipolar transistor's circuit, and drive circuit only needs a drive signal just can drive a plurality of IGBT, has reduced PCB's area, and the interference killing feature becomes strong moreover, has avoided opening unusually. Furthermore, the utility model discloses a circuit of integrated a plurality of insulated gate bipolar transistors can use a plurality of IGBTs of main control chip drive, realizes IGBT's independent drive to make induction heating electrical apparatus can realize the heating in different positions of different modes. Additionally, the utility model discloses integrated a plurality of insulated gate bipolar transistor's circuit can integrate at least one kind of protection circuit in back pressure protection circuit, overcurrent protection circuit and the excess temperature protection circuit etc. has reduced PCB's area, better laying out wiring, and the protection real-time is better, and the reliability is higher.
The above mentioned embodiments are only examples of the present invention, and not intended to limit the scope of the claims of the present invention, and all the equivalent structures or equivalent flow changes made by the contents of the specification and the drawings of the present invention or directly or indirectly applied to other related technical fields are also included in the scope of the claims of the present invention.
Claims (10)
1. A circuit integrating a plurality of insulated gate bipolar transistors is characterized by comprising a main control circuit and a synchronous circuit,
the main control circuit comprises a direct current power supply, at least two insulated gate bipolar transistors, at least two induction heating circuits arranged corresponding to the insulated gate bipolar transistors and a driving circuit connected with the at least two insulated gate bipolar transistors,
the synchronous circuit comprises a resonance end, a back pressure end corresponding to the induction heating circuit and a main control chip connected with the driving circuit.
2. The circuit integrating a plurality of insulated gate bipolar transistors according to claim 1, wherein said driving circuit comprises a 3-8 line decoder.
3. The circuit for integrating a plurality of insulated gate bipolar transistors according to claim 1 or 2, wherein the pin led out from the gate of the insulated gate bipolar transistor is an input drive signal pin and is connected with the drive circuit.
4. The circuit integrating a plurality of insulated gate bipolar transistors according to claim 1, further comprising a back-voltage protection circuit.
5. The circuit integrating a plurality of insulated gate bipolar transistors according to claim 4, wherein said back-voltage protection circuit comprises a comparator.
6. The circuit integrating a plurality of insulated gate bipolar transistors according to claim 4 or 5, wherein the pin led out from between the collector and the emitter of the insulated gate bipolar transistor is a reverse voltage protection pin and is connected with the reverse voltage protection circuit.
7. The circuit integrating a plurality of insulated gate bipolar transistors according to claim 1, further comprising an over-current protection circuit.
8. The circuit integrating a plurality of insulated gate bipolar transistors according to claim 7, wherein said over-current protection circuit comprises a sampling resistor for collecting current between a collector and an emitter of said insulated gate bipolar transistor.
9. The circuit integrating a plurality of insulated gate bipolar transistors according to claim 8, wherein said over-current protection circuit further comprises an amplification circuit and a comparator.
10. The circuit integrating a plurality of insulated gate bipolar transistors according to any one of claims 7 to 9, wherein the pin led out between the gate and the emitter of the insulated gate bipolar transistor is an overcurrent protection pin and is connected with the overcurrent protection circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922181374.9U CN211047278U (en) | 2019-12-06 | 2019-12-06 | Circuit for integrating multiple insulated gate bipolar transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922181374.9U CN211047278U (en) | 2019-12-06 | 2019-12-06 | Circuit for integrating multiple insulated gate bipolar transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211047278U true CN211047278U (en) | 2020-07-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922181374.9U Active CN211047278U (en) | 2019-12-06 | 2019-12-06 | Circuit for integrating multiple insulated gate bipolar transistors |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211047278U (en) |
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2019
- 2019-12-06 CN CN201922181374.9U patent/CN211047278U/en active Active
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