CN115276565B - High-stability meter-attached quartz crystal oscillator - Google Patents
High-stability meter-attached quartz crystal oscillator Download PDFInfo
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- CN115276565B CN115276565B CN202211194800.2A CN202211194800A CN115276565B CN 115276565 B CN115276565 B CN 115276565B CN 202211194800 A CN202211194800 A CN 202211194800A CN 115276565 B CN115276565 B CN 115276565B
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- 230000010355 oscillation Effects 0.000 claims abstract description 30
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- 238000004806 packaging method and process Methods 0.000 claims abstract description 6
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/366—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current
- H03B5/368—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current the means being voltage variable capacitance diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/08—Holders with means for regulating temperature
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention belongs to the technical field of piezoelectric crystals, and particularly discloses a high-stability surface-mounted quartz crystal oscillator which comprises a ceramic base, a high-stability crystal oscillator chip arranged in the ceramic base, a quartz wafer plated with an electrode, and a metal cover plate connected with the ceramic base and used for packaging; the high-stability crystal oscillator chip comprises a temperature compensation circuit, a voltage-controlled oscillation circuit, a program storage circuit, a temperature control circuit and a power management circuit, wherein the voltage-controlled oscillation circuit and the program storage circuit are connected with the temperature compensation circuit; wherein, the quartz crystal wafer is connected with a voltage-controlled oscillating circuit. The quartz crystal oscillator can reach high stability index after being electrified for 3 minutes, and meanwhile, the maximum power consumption can be controlled within 0.3W. The surface-mounted quartz crystal oscillator has the advantages of better starting-up characteristics and power consumption than the traditional constant-temperature crystal oscillator, and better frequency precision and stability than the traditional crystal oscillator.
Description
Technical Field
The invention belongs to the technical field of piezoelectric crystals, and particularly relates to a high-stability surface-mounted quartz crystal oscillator.
Background
A quartz crystal oscillator is a core electronic component in modern electronic devices, and provides a stable time reference for the electronic devices. In the design of quartz crystal oscillators, in order to obtain a high frequency stability index, two modes of temperature compensation and precise temperature control are generally adopted. The quartz crystal oscillator adopting the temperature compensation technology is called as a temperature compensation crystal oscillator, and generates a voltage which changes along with the temperature through a compensation voltage generating circuit, so as to compensate the frequency deviation of the quartz crystal oscillator under high and low temperatures, thereby realizing high stability index. The quartz crystal oscillator adopting the precise temperature control technology is called as an oven controlled crystal oscillator, and the oscillating circuit and the quartz crystal are thermostated to a stable temperature value through a temperature control circuit, so that the internal circuit and elements of the oven controlled crystal oscillator are not influenced by the temperature of the external environment, and the high stability index of the frequency is realized.
In practical use, the temperature compensation crystal oscillator has the advantages of small volume, low power consumption and workWide temperature range, etc. but the stability index is affected by the basic principle and compensation precision of the circuit and can only be +/-0.5X 10 within wide temperature range (-55-105 deg.C) -6 ～±1.0×10 -6 . Because of the basic working principle of constant temperature inside the oven controlled crystal oscillator, the stability index of the oven controlled crystal oscillator is higher than that of the temperature compensation crystal oscillator, and can be generally up to 10 -7 ～10 -8 The magnitude, but the volume of the constant temperature crystal oscillator is large, the power consumption is high, the working temperature range is narrower than that of the temperature compensation crystal oscillator, and the constant temperature crystal oscillator needs to be stable for at least more than 3 minutes after being started to reach 10 -7 ～10 -8 Especially within 1 to 2 minutes of starting up, the stability index of the output frequency of the constant temperature crystal oscillator is very poor and is at least larger than +/-1 multiplied by 10 -6 。
Disclosure of Invention
The invention aims to provide a high-stability surface-mounted quartz crystal oscillator, which mainly solves the problems of large volume, high power consumption, narrow working temperature range and overlong startup stability time of a constant temperature crystal oscillator.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a high-stability surface-mounted quartz crystal oscillator comprises a ceramic base, a high-stability crystal oscillator chip and a quartz wafer plated with electrodes, wherein the high-stability crystal oscillator chip and the quartz wafer are installed in the ceramic base; the high-stability crystal oscillator chip comprises a temperature compensation circuit, a voltage-controlled oscillation circuit, a program storage circuit, a temperature control circuit and a power management circuit, wherein the voltage-controlled oscillation circuit and the program storage circuit are connected with the temperature compensation circuit; the quartz wafer is connected with a voltage-controlled oscillation circuit;
the temperature compensation circuit integrates a temperature sensor A, a temperature sensor B, a voltage generator with 1-time coefficient to 6-time coefficient and 6 temperature segmented voltage generators, wherein the temperature sensor A and the temperature sensor B generate compensation voltage changing along with temperature, the compensation voltage generated by the temperature sensor A enters the voltage generator with 1-time coefficient to 6-time coefficient, the compensation voltage generated by the temperature sensor B enters the 6 temperature segmented voltage generators, and the voltage generated by the voltage generator with 1-time coefficient to 6-time coefficient and the voltage generated by the 6 temperature segmented voltage generators are added to the voltage-controlled tuning end of the voltage-controlled oscillation circuit after being summed; the program storage circuit is connected with the voltage generator with 1-time term coefficient to 6-time term coefficient and the 6 temperature segmented voltage generators, so that the gain of the internal amplifier of the voltage generator with 1-time term coefficient to 6-time term coefficient is set through the program storage, different compensation voltage curve coefficients are determined, and meanwhile, the program storage is also provided with the gain of the internal amplifier of the temperature segmented voltage generator.
Further, in the present invention, the voltage-controlled oscillation circuit includes a CMOS nor gate M1, a capacitor C1 having one end connected to the input end of the CMOS nor gate M1 and the other end grounded, a variable capacitor array Cs having one end connected to the input end of the CMOS not gate M1, a feedback resistor Rf connected between the input end and the output end of the CMOS not gate M1, a variable resistor Rd having one end connected to the other end of the variable capacitor array Cs and the other end connected to the output end of the CMOS not gate M1, a capacitor C2 having one end connected to a common end of the variable capacitor array Cs and the variable resistor Rd and the other end grounded, a CMOS not gate M2 connected to the output end of the CMOS not gate M1, and a buffer M3 connected to the output end of the CMOS not gate M2; the quartz wafer is connected between the capacitor C1 and the variable capacitor array Cs; the output end of the buffer M3 is used as the output end of the voltage-controlled oscillating circuit; the input end of the variable capacitor array Cs is used as a voltage-controlled tuning end of the voltage-controlled oscillation circuit.
Further, in the present invention, the first and second substrates, the temperature control circuit comprises a temperature sensor C, a gain controller, a gate controller, a current controller and an MOS (metal oxide semiconductor) tube which are connected in sequence; and the voltage gain multiple of the gain controller, the switching voltage of the gate controller and the maximum current value which is allowed to pass by the MOS tube by the current controller are all set by the program memory.
Further, in the invention, one side of the ceramic base is provided with a cavity, a crystal oscillator chip mounting position and a quartz wafer mounting position are arranged in the cavity, and two dispensing platforms are arranged on the quartz wafer mounting position.
Further, in the invention, the quartz wafer is an AT square wafer, the electrode material is Au, and the vibration mode is fundamental frequency.
Further, in the present invention, the temperature sensor a, the temperature sensor B, and the temperature sensor C are all semiconductor PN junction type temperature sensors.
Further, in the present invention, the 1 st order coefficient voltage generator among the 1 st order coefficient to 6 th order coefficient voltage generators includes a 1 st order coarse adjustment voltage generator and a 1 st order fine adjustment voltage generator.
Compared with the prior art, the invention has the following beneficial effects:
(1) The high-stability surface-mounted quartz crystal oscillator provided by the invention has the advantages that the temperature compensation circuit is arranged, so that the startup time of the quartz crystal oscillator within the temperature range of-55-105 ℃ for 1 second can reach +/-0.2 multiplied by 10 -6 ～±0.5×10 -6 The stability index of (2). Within the temperature range of-55 ℃ to 85 ℃, the quartz crystal oscillator can reach better than +/-0.05 multiplied by 10 after being electrified for 3 minutes -6 The stability index of the power system is controlled, and meanwhile, the maximum power consumption can be controlled within 0.3W. The surface-mounted quartz crystal oscillator has the advantages of better starting-up characteristics and power consumption than the traditional constant temperature crystal oscillator, and better frequency precision and stability than the traditional temperature compensation crystal oscillator.
(2) The high-stability-table-pasted quartz crystal oscillator combines a high-precision temperature compensation technology and a precision temperature control technology, adopts an integrated surface-pasted packaging form, installs a quartz wafer plated with electrodes and a high-stability crystal oscillator chip (comprising a power management circuit, a voltage-controlled oscillation circuit, a high-precision temperature compensation circuit and a high-precision temperature control circuit) in a base cavity, and realizes the sealing of a ceramic base through a parallel sealing welding process, so that the quartz crystal oscillator has the characteristics of quick and stable starting, low power consumption, small volume and wide working temperature range, and the quartz crystal oscillator has high production automation degree, good batch production performance, good parameter consistency and further reduced cost.
Drawings
Fig. 1 is an exploded view of the structure of the present invention.
FIG. 2 is a schematic diagram of the connection of the internal chips according to the present invention.
FIG. 3 is a schematic view of the connection of the inner quartz wafer of the present invention.
Fig. 4 is a sectional view of the outer shape structure of the present invention.
Fig. 5 is a bottom view of the topographical structure of the present invention.
Fig. 6 is a schematic circuit block diagram of the internal high-stability crystal oscillator chip of the present invention.
Fig. 7 is a schematic block diagram of the internal voltage controlled oscillator circuit of the present invention.
Fig. 8 is a schematic block diagram of the temperature compensation circuit of the present invention.
FIG. 9 is a schematic block diagram of a temperature control circuit of the present invention.
Wherein, the names corresponding to the reference numbers are:
the chip comprises a ceramic substrate 1, a high-stability crystal oscillator chip 2, a quartz wafer 3, a metal cover plate 4, a crystal oscillator chip mounting position 5, a quartz wafer mounting position 6, a sealing ring 7, a glue dispensing platform 8, a voltage control pin 9, a grounding pin 10, an output pin 11 and a power supply pin 12.
Detailed Description
The present invention will be further described with reference to the following description and examples, which include but are not limited to the following examples.
Examples
As shown in fig. 1 to 5, a high-stability surface-mount quartz crystal oscillator according to the present invention includes a ceramic base 1, a high-stability crystal oscillator chip 2, a quartz wafer 3 plated with an electrode, and a metal cover 4. A cavity is opened to ceramic substrate 1 up end, is equipped with crystal oscillator chip installation position 5 and quartz wafer installation position 6 in the cavity, and high stability crystal oscillator chip 2 and the quartz wafer 3 who plates the electrode are installed respectively in crystal oscillator chip installation position 5 and quartz wafer installation position 6. The metal cover plate 4 is connected with the sealing ring 7 of the ceramic base 1 through a parallel sealing welding process. The surface-mounted quartz crystal oscillator adopts an integrated packaging structure, the interior of the structure is in a vacuum environment, and the size after packaging is 5mm multiplied by 3.2mm multiplied by 1.5mm.
As shown in fig. 2 to 4, the high-stability crystal oscillator chip 2 is bonded to the crystal oscillator chip mounting location 5 of the ceramic base 1 through the conductive adhesive, and the high-stability crystal oscillator chip 2 is bonded to the solder gold ribbon of the chip corresponding to the ceramic base 1 through the gold bonding wire, so that the high-stability crystal oscillator chip 2 is electrically connected to the ceramic base 1.
As shown in fig. 3, the electrode-plated quartz wafer 3 is bonded to the dispensing platform 8 of the ceramic base 1 by conductive adhesive, and is electrically connected to the high-stability crystal oscillator chip 2 by routing inside the ceramic base 1. Wherein, the quartz wafer adopts an AT square wafer, the vibration mode is fundamental frequency, the electrode material is Au, and the wafer frequency is set to be a fixed frequency point within the range of 10MHz to 52 MHz.
As shown in fig. 5, the bottom of the ceramic base 1 has 4 functional pads, which are respectively the voltage-controlled pin 9, the grounding pin 10, the output pin 11, the power supply pin 12 of the crystal oscillation, and the international standard mode of surface-mounted quartz crystal oscillator that the position, size and functional definition of the 4 functional pads are all compatible with the package size.
As shown in fig. 6, the high-stability crystal oscillator chip 2 includes a power management circuit, a voltage-controlled oscillation circuit, a temperature compensation circuit, a temperature control circuit, and a program storage circuit.
Firstly, the power management circuit adopts a basic filter circuit form containing a low dropout voltage regulator circuit and a bias current source, and provides a stable and low-noise voltage reference for a chip internal circuit. The power supply management circuit can realize that the adjustable precision of the output voltage is better than 50mV, the noise of the output voltage is better than 11 mu VRMS, and the power supply rejection ratio at 100KHz is better than 54dB.
As shown in fig. 7, the voltage-controlled oscillation circuit takes the form of a circuit based on gate oscillation of a CMOS logic not gate, the oscillation circuit supports a frequency range of 10MHz to 52 MHz. The voltage-controlled oscillation circuit comprises a CMOS logic NOT gate M1, a capacitor C1 with one end connected to the input end of the CMOS logic NOT gate M1 and the other end grounded, a variable capacitor array Cs with one end connected to the input end of the CMOS logic NOT gate M1, and an input connected to the CMOS logic NOT gate M1A feedback resistor Rf between the end and the output end, a variable resistor Rd with one end connected with the other end of the variable capacitor array Cs and the other end connected with the output end of the CMOS logic NOT gate M1, a capacitor C2 with one end connected with the common end of the variable capacitor array Cs and the variable resistor Rd and the other end grounded, a CMOS logic NOT gate M2 connected with the output end of the CMOS logic NOT gate M1 and a buffer M3 connected with the output end of the CMOS logic NOT gate M2; the quartz wafer is connected between the capacitor C1 and the variable capacitor array Cs; the output end of the buffer M3 is used as the output end of the voltage-controlled oscillating circuit. The capacitors C1, C2 are used to match the load capacitance of the electrode coated quartz wafer 3. Capacitance C inside the oscillating circuit S By adopting the variable capacitor array, the capacitance value of the capacitor array Cs can be changed through voltage, so that the frequency of the oscillating circuit can be adjusted. Resistance R d Is a variable resistor for adjusting the excitation current of the oscillation circuit to the electrode-coated quartz wafer 3. Meanwhile, the voltage-controlled oscillation circuit is provided with an output buffer circuit before output, so that the influence of a load on the state of the voltage-controlled oscillation circuit is further reduced. The voltage-controlled oscillation circuit is electrically connected with the quartz wafer 3 plated with the electrode to generate stable oscillation frequency.
As shown in fig. 8, the temperature compensation circuit integrates a temperature sensor a, a temperature sensor B, a 1 st order coefficient to 6 th order coefficient voltage generator, and 6 temperature segment voltage generators, wherein the temperature sensor a and the temperature sensor B generate compensation voltages varying with temperature, the compensation voltage generated by the temperature sensor a enters the 1 st order coefficient to 6 th order coefficient voltage generator, the compensation voltage generated by the temperature sensor B enters the 6 temperature segment voltage generators, and the voltages generated by the 1 st order coefficient to 6 th order coefficient voltage generator and the 6 temperature segment voltage generators are summed and then loaded to the voltage-controlled tuning terminal of the voltage-controlled oscillator circuit. The voltage generator with the coefficient of the 1-time term is further divided into a 1-time term coarse adjustment voltage generator and a 1-time term fine adjustment voltage generator. The program memory may set the gain of the voltage generator internal amplifier to determine the different compensation voltage curve coefficients, while the program memory sets the gain of the segmented voltage generator internal amplifier.
The voltage generator takes a differential amplifier combination with source negative feedback as a core unit to form a voltage curve with 1-order term coefficient to 6-order term coefficient and a temperature segmented voltage curve. The voltage generator with the 1-order coefficient to 6-order coefficient can realize compensation voltage (a 6-order coefficient curve is formed between voltage and temperature) in a wide temperature range of-55 ℃ to 105 ℃, the 6 temperature segmented voltage generators generate another compensation voltage aiming at different temperature ranges of (-55 ℃ to-30 ℃, 30 ℃ to 0 ℃, 0 ℃ to 25 ℃, 25 ℃ to 65 ℃, 65 ℃ to 85 ℃ and 85 ℃ to 105 ℃, and the compensation voltage is used for further correcting the frequency offset of local temperature. And finally, summing voltages generated by the voltage generator with the 1-time term coefficient to the 6-time term coefficient and the 6 temperature subsection voltage generators, and then loading the summed voltages to a voltage-controlled tuning end of the voltage-controlled oscillation circuit to realize the compensation of oscillation frequency deviation. The input end of the variable capacitor array Cs is used as a voltage-controlled tuning end of the voltage-controlled oscillation circuit.
As shown in fig. 9, the temperature control circuit includes a temperature sensor C, a gain controller, a gate controller, a current controller, and a MOS transistor. The temperature control circuit is mainly used for setting the voltage gain multiple of the gain controller, the switching voltage of the gate controller and the maximum current value allowed to pass by the MOS tube by the current controller through the program memory. The internal temperature sensor C is a semiconductor PN junction type temperature sensor and generates linear voltage changing along with temperature, the voltage enters the gain controller and then enters the gate controller to generate voltage for controlling the current controller, the current controller drives the MOS tube to work, the temperature is heated to a set temperature value through the heating of the MOS tube, and meanwhile, the current controller can limit the maximum current flowing through the MOS tube.
And the program storage circuit is used for storing the configuration of parameters (voltage reference values) of the power management circuit, parameters (including excitation current, voltage-controlled gain, waveform and the like) of the voltage-controlled oscillation circuit, parameters (compensation voltage curve parameters corresponding to temperature characteristic curves with different frequencies) of the temperature compensation circuit and parameters (including temperature control temperature values, temperature control precision, temperature control sensitivity, maximum current flowing through the MOS tube and the like) of the temperature control circuit. Meanwhile, the program storage circuit realizes reading and writing of data inside the high-stability crystal oscillator chip 2 through the serial communication circuit, so that real-time parameter setting of the high-stability crystal oscillator chip 2 is realized.
Through the design, the high-stability-table-attached quartz crystal oscillator combines a high-precision temperature compensation technology and a precise temperature control technology, and integrates a voltage-controlled oscillation circuit, a temperature compensation circuit and a temperature control circuit into one chip. Meanwhile, the crystal oscillator adopts an integrated surface-mounted packaging mode, the interior of the crystal oscillator is in a vacuum environment, and the packaged volume is 5mm multiplied by 3.2mm multiplied by 1.5mm. The quartz crystal oscillator can realize +/-0.2 multiplied by 10 within a wide temperature range of-55 to 105 DEG C -6 ～±0.5×10 -6 The stability index can be better than +/-0.05 multiplied by 10 in the temperature range of-55 ℃ to 85 ℃ after the temperature of internal temperature control is stable -6 The stability index of (1). Compared with the traditional constant temperature crystal oscillator, the quartz crystal oscillator has better starting-up characteristic, lower power consumption, smaller volume and wider working temperature range; compared with the traditional temperature compensation crystal oscillator, the frequency precision and the frequency temperature stability index of the crystal oscillator are better. Meanwhile, the crystal oscillator has the advantages of high production automation degree, good batch production performance, good parameter consistency and further reduced cost.
The above-mentioned embodiment is only one of the preferred embodiments of the present invention, and should not be used to limit the scope of the present invention, but all the insubstantial modifications or changes made within the spirit and scope of the main design of the present invention, which still solve the technical problems consistent with the present invention, should be included in the scope of the present invention.
Claims (6)
1. A high-stability surface-mounted quartz crystal oscillator is characterized by comprising a ceramic base (1), a high-stability crystal oscillator chip (2) arranged in the ceramic base (1), a quartz wafer (3) plated with an electrode, and a metal cover plate (4) used for being connected with the ceramic base (1) and used for packaging; the high-stability crystal oscillator chip (2) comprises a temperature compensation circuit, a voltage-controlled oscillation circuit and a program storage circuit which are connected with the temperature compensation circuit, a temperature control circuit connected with the program storage circuit, and a power management circuit which is used for connecting the temperature compensation circuit, the voltage-controlled oscillation circuit, the program storage circuit and the temperature control circuit; wherein the quartz wafer (3) is connected with a voltage-controlled oscillating circuit;
the temperature compensation circuit integrates a temperature sensor A, a temperature sensor B, a voltage generator with 1-time coefficient to 6-time coefficient and 6 temperature segmented voltage generators, wherein the temperature sensor A and the temperature sensor B generate compensation voltage changing along with temperature, the compensation voltage generated by the temperature sensor A enters the voltage generator with 1-time coefficient to 6-time coefficient, the compensation voltage generated by the temperature sensor B enters the 6 temperature segmented voltage generators, and the voltage generated by the voltage generator with 1-time coefficient to 6-time coefficient and the voltage generated by the 6 temperature segmented voltage generators are added to the voltage-controlled tuning end of the voltage-controlled oscillation circuit after being summed; the program storage circuit is connected with the voltage generator with 1-time coefficient to 6-time coefficient and the 6 temperature segmented voltage generators, so that the gain of the internal amplifier of the voltage generator with 1-time coefficient to 6-time coefficient is set through the program storage, different compensation voltage curve coefficients are determined, and meanwhile, the program storage is also provided with the gain of the internal amplifier of the temperature segmented voltage generator;
the temperature control circuit comprises a temperature sensor C, a gain controller, a gate controller, a current controller and an MOS (metal oxide semiconductor) tube which are connected in sequence; the voltage gain multiple of the gain controller, the switching voltage of the gate controller and the maximum current value which is allowed to pass by the MOS tube by the current controller are all set by the program memory;
the compensation method of the temperature compensation circuit comprises the following steps: the compensation voltage generated by the voltage generator with the 1-time-term coefficient to 6-time-term coefficient carries out accurate first compensation on frequency deviation within the temperature range of minus 55 ℃ to 105 ℃; the 6 temperature segmented voltage generators are used for carrying out secondary compensation on the frequency offset of the high-temperature segment after the temperature control circuit is stabilized at a fixed temperature.
2. The high-stability degree-of-sticking quartz crystal oscillator according to claim 1, wherein the voltage-controlled oscillation circuit includes a CMOS logic not gate M1, a capacitor C1 having one end connected to the input end of the CMOS logic not gate M1 and the other end grounded, a variable capacitor array Cs having one end connected to the input end of the CMOS logic not gate M1, a feedback resistor Rf connected between the input end and the output end of the CMOS logic not gate M1, a variable resistor Rd having one end connected to the other end of the variable capacitor array Cs and the other end connected to the output end of the CMOS logic not gate M1, a capacitor C2 having one end connected to a common end of the variable capacitor array Cs and the variable resistor Rd and the other end grounded, a CMOS logic not gate M2 connected to the output end of the CMOS logic not gate M1, and a buffer M3 connected to the output end of the CMOS logic not gate M2; the quartz wafer is connected between the capacitor C1 and the variable capacitor array Cs; the output end of the buffer M3 is used as the output end of the voltage-controlled oscillating circuit; the input end of the variable capacitor array Cs is used as a voltage-controlled tuning end of the voltage-controlled oscillation circuit.
3. The high-stability clock-pasted quartz crystal oscillator according to claim 2, wherein a cavity is formed on one side of the ceramic base (1), a crystal oscillator chip mounting position (5) and a quartz wafer mounting position (6) are formed in the cavity, and two dispensing platforms (8) are arranged on the quartz wafer mounting position.
4. The high-stability SMT quartz crystal oscillator according to claim 3, wherein the quartz crystal wafer is an AT-cut square wafer, the electrode material is Au, and the vibration mode is a fundamental frequency.
5. The high stability SMT according to claim 4, wherein the temperature sensor A, the temperature sensor B, and the temperature sensor C are semiconductor PN junction type temperature sensors.
6. The high stability degree Table-mounted quartz crystal oscillator according to claim 5, wherein the 1 st order coefficient voltage generator of the 1 st order coefficient to 6 th order coefficient voltage generators comprises a 1 st order coarse tuning voltage generator and a 1 st order fine tuning voltage generator.
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| CN111628723A (en) * | 2020-05-20 | 2020-09-04 | 成都恒晶科技有限公司 | High-stability temperature compensation voltage-controlled crystal oscillator |
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