CN115274923A - Manufacturing process of ALD (atomic layer deposition) passivation film of photovoltaic N-type TOPCon battery - Google Patents

Manufacturing process of ALD (atomic layer deposition) passivation film of photovoltaic N-type TOPCon battery Download PDF

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CN115274923A
CN115274923A CN202210856578.1A CN202210856578A CN115274923A CN 115274923 A CN115274923 A CN 115274923A CN 202210856578 A CN202210856578 A CN 202210856578A CN 115274923 A CN115274923 A CN 115274923A
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introducing
process chamber
photovoltaic
ald
passivation film
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陈庆敏
俞玉松
卓倩武
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Wuxi Songyu Technology Co ltd
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Abstract

The invention discloses a manufacturing process of an ALD (atomic layer deposition) passivation film of a photovoltaic N-type TOPCon battery, which comprises the following steps of: step S1, putting a substrate treated by a wet process in a process chamber, and forming a vacuum constant-temperature environment in the process chamber, wherein the target temperature is 200-300 ℃; s2, circularly introducing O into the process chamber3Gas, removing wet residue on the surface of the silicon wafer and preparing SiO2A film; s3, introducing H into the process chamber2O vapor in SiO2Depositing on the surface to form a passivation interface; s4, alternately introducing TMA and H into the process chamber2The oxygen-containing gas is the steam of O,growing highly passivated Al2O3A film; and S5, blowing and breaking vacuum to finish the process. The method can effectively remove the wet residues on the surface of the silicon wafer, and has an obvious effect of improving the cell Eta (conversion efficiency).

Description

Manufacturing process of ALD (atomic layer deposition) passivation film of photovoltaic N-type TOPCon battery
Technical Field
The invention relates to the technical field of photovoltaic cell manufacturing, in particular to a manufacturing process of an ALD (atomic layer deposition) passivation film of a photovoltaic N-type TOPCon cell.
Background
Atomic Layer Deposition (ALD) is a technique for forming a deposited film by alternately passing a vapor phase precursor into a reactor and chemically reacting, which can plate a substance on a substrate surface layer by layer in the form of a monoatomic layer. After the precursors are deposited on the surface of the substrate, the precursors are chemically adsorbed on the surface of the substrate, and then the reactor needs to be purged by inert gas to remove the residual precursors which are not adsorbed on the surface of the substrate, so as to ensure that the chemical reaction only occurs on the surface of the substrate. For the field of photovoltaic cells, ALD is applied to Al2O3The manufacturing of the passivation film, the difference of the process in the growth process of the ALD film, influences the quality of the passivation effect.
The existing ALD atomic layer deposition technology is to place a silicon wafer in a vacuum reaction chamber and alternately introduce TMA and H when the temperature of the chamber reaches 200-250 DEG C2O, using N after a gas is introduced for a deposition time2Purging the residual gas to obtain the desired Al according to the cycle times of alternately introducing the gas2O3The purpose of the film thickness. The traditional PERC battery passivation film manufacturing process is applied to an N-type TOPCon battery, chemical additives remained in a wet process cannot be completely cleaned due to the rugged suede, a composite center is formed on a silicon wafer, and therefore Al of an ALD process is weakened2O3The passivation effect of (1).
Disclosure of Invention
The applicant provides a manufacturing process of an ALD passivation film of a photovoltaic N-type TOPCon battery aiming at the defects in the existing production, so that the problems of cleaning residues on the surface of a silicon wafer before the ALD aluminum oxide film coating of the N-type TOPCon battery are solved, the recombination is reduced, the passivation effect is improved, and the purpose of improving the open-circuit voltage is further achieved.
The technical scheme adopted by the invention is as follows:
a manufacturing process of an ALD passivation film of a photovoltaic N-type TOPCon battery comprises the following steps:
s1, putting a substrate treated by a wet process in a process chamber, and forming a vacuum constant-temperature environment in the process chamber, wherein the target temperature is 200-300 ℃;
s2, circularly introducing O into the process chamber3Gas, removing wet residue on the surface of the silicon wafer and preparing SiO2A film;
s3, introducing H into the process chamber2O vapor in SiO2Depositing on the surface to form a passivation interface;
s4, alternately introducing TMA and H into the process chamber2O vapor to grow highly passivated Al2O3A film;
and S5, blowing and breaking vacuum to finish the process.
As a further improvement of the technical scheme:
the substrate in step S1 is a silicon wafer.
Step S1 further includes: heating the process chamber for 200s at a target temperature of 200-300 deg.C, and vacuumizing the process chamber to a low pressure of 0.05-0.3 mTorr to form a vacuum constant temperature environment in the process chamber.
Step S1 further includes: the duration is 200-600s after the vacuum constant temperature environment is formed in the process chamber.
The step S2 further includes: introducing O circularly into the process chamber3The method of gas comprises introducing O3Gas for 30-200s, and introducing N2Purging for 0-100s for 1-5 cycles.
Step S3 further includes: introducing H into the process chamber2The method for O steam comprises the step of introducing H2Introducing O steam for 5-30s, and introducing N2Purging for 0-100s.
Step S4 further includes: TMA and H are alternately introduced into the process chamber2The O vapor is introduced by introducing TMA for 0.5-5s, and introducing N2Blowing for 1-10s, stopping for 0.5-5s, and introducing H2O, the duration is 2 to 7s, N is introduced after 0.5 to 5s of pause2Purging for 1-10s, and stopping0.5-5s, which is a cycle, and the cycle is continuously executed for 20-70 times.
The invention has the following beneficial effects:
the invention introduces O before ALD process3Gas, can effectively remove wet residue on the surface of the silicon wafer and prepare SiO2The film has the function of interface passivation and the effect of improving PID resistance. In SiO2After the film is prepared, H is introduced for a certain time2O vapor depositing on the surface of the silicon wafer to make SiO2Film and subsequent Al2O3The film forms good contact, H + (hydrogen ions) overflows during sintering, and interface recombination is reduced, so that open-circuit voltage is increased; and alternately introducing TMA and H2O forms a dynamic equilibrium. The above steps have an obvious effect on improving the battery Eta (conversion efficiency).
Drawings
FIG. 1 is a schematic flow chart of the present invention.
Detailed Description
The following describes embodiments of the present invention with reference to the drawings.
As shown in fig. 1, the manufacturing process of the ALD passivation film of the photovoltaic N-type TOPCon cell of the present invention includes the following steps:
s1, putting a substrate which is processed by a wet process procedure and is a silicon wafer and the like into a process chamber, heating the process chamber for 200S at a target temperature of 200-300 ℃, vacuumizing the process chamber to a low pressure of 0.05-0.3 mTorr, and forming a vacuum constant-temperature environment in the process chamber for 200-600S at the target temperature of 200-300 ℃;
s2, introducing O into the process chamber3Gas, removing wet residue on the surface of the silicon wafer and preparing SiO2Film, duration is 30-200s, then N is introduced2Purging for 0-100s for 1-5 cycles;
s3, introducing H into the process chamber2O vapor in SiO2Depositing on the surface to form a passivated interface with a duration of 5-30s, and introducing N2Purging for 0-100s;
s4, alternately introducing TMA (trimethyl aluminum) and H into the process chamber2O vapor to grow highly passivated Al2O3Film, comprising introducing TMA for 0.5-5s and then introducing N2Blowing for 1-10s, stopping for 0.5-5s, and introducing H2O, the duration is 2-7s, after pausing for 0.5-5s, N is introduced2Purging for 1-10s, stopping for 0.5-5s, and continuously executing 20-70 times of circulation;
and S5, blowing and breaking vacuum to finish the process.
Firstly introducing O3Gas, removing wet residue on the surface of the silicon wafer and preparing SiO2On one hand, the chemical liquid medicine of the wet process permeates to the bottom of the suede pyramid, the water cleaning of the film cannot be completely removed, and O3The introduction of O, which is a residue on the surface of the silicon wafer by a wet process, can effectively clean the surface of the silicon wafer3The chemical components at the bottom of the suede pyramid can be effectively oxidized and blown away; on the other hand, the introduced O3Can perform an oxidation reaction with a silicon wafer to form SiO with a certain thickness2The film has the function of interface passivation and the effect of improving PID resistance.
In SiO2After the film is prepared, H is introduced for a certain time2O vapor deposition on the surface of the silicon wafer, on the one hand, to cause SiO2Film and subsequent Al2O3The film forms good contact, H + (hydrogen ions) overflow during sintering, and interface recombination is reduced, so that open-circuit voltage is increased; on the other hand, H is introduced2Depositing O on the surface to rapidly react with the TMA which is introduced firstly and then (generally, the amount of the TMA which is introduced firstly in the ALD process is more than a few) so as to achieve one cycle and one TMA introduction, and alternately introducing the TMA and the H subsequently2O forms a dynamic equilibrium.
Addition of O for enhancing passivation effect prior to atomic layer deposition3Oxidation step and H2And O passivation compensation step, wherein the two-step process directly has an obvious effect on improving the cell Eta (conversion efficiency). The process method is simple and convenient, does not need to increase redundant machine cost and labor cost, and only needs to increase the preparation of O3The machine and the related pipelines can realize the process on the ALD machineThe principle is simple, and the popularization and the use are convenient.
In order to verify the beneficial effects of the invention, the invention also carries out practical tests, and the related test contents and results are as follows:
depositing Al by using atomic layer deposition furnace in certain photovoltaic cell workshop under different processes2O3Proof of film test, target Al2O3The thickness of the film was 4nm (30 cycles) and the process chamber temperature was controlled at 275 ℃. The test was divided into 4 groups, group A (without O access)3And H2O, direct ALD deposition), group B (first with O)3ALD deposition), group C (with H first)2O, then ALD deposition), group D (inventive variant, first introduction of O3And H2O, re-ALD deposition), electrical property data are as follows in tables 1 and 2:
TABLE 1
Figure DEST_PATH_IMAGE002
Remarking: BSL is a comparison group, life is minority carrier Lifetime in units of us, jo is interface recombination in units of A/cm2, and iVoc is analog open-circuit voltage in units of V. And the passivation of the whole process is verified, and no printing process is required.
TABLE 2
Figure DEST_PATH_IMAGE004
Remarking: voc open circuit voltage in units of V, isc short circuit current in units of a, eta conversion efficiency in units of%, FF fill factor in units of%, rs series resistance in units of Ω, rsh parallel resistance in units of Ω, and IRev2 leakage current in units of a.
As can be seen from tables 1 and 2, (1) H was increased2O and O3After the process, the Life time of the battery piece is obviously increased, the J0 is obviously reduced, and the iVoc is obviously improved;
(2) Increase of H2O and O3After the process, the battery plate Eta is obviously improved, and the group D of O3+H2The O process efficiency Eta is improved by 0.13 percent, and is mainly VocThe promotion is obvious.
The foregoing description is illustrative of the present invention and is not to be construed as limiting thereof, as the invention may be modified in any manner without departing from the spirit thereof.

Claims (7)

1. A manufacturing process of an ALD passivation film of a photovoltaic N-type TOPCon battery is characterized in that: the method comprises the following steps:
s1, putting a substrate treated by a wet process in a process chamber, and forming a vacuum constant-temperature environment in the process chamber, wherein the target temperature is 200-300 ℃;
s2, circularly introducing O into the process chamber3Gas, removing wet residue on the surface of the silicon wafer and preparing SiO2A film;
s3, introducing H into the process chamber2O vapor in SiO2Depositing on the surface to form a passivation interface;
s4, alternately introducing TMA and H into the process chamber2O vapor to grow highly passivated Al2O3A film;
and S5, blowing and breaking vacuum to finish the process.
2. The process for manufacturing a photovoltaic N-type TOPCon cell ALD passivation film according to claim 1, characterized in that: the substrate in step S1 is a silicon wafer.
3. The manufacturing process of ALD passivation film for photovoltaic N-type TOPCon battery of claim 1, characterized in that: step S1 further includes: heating the process chamber for 200s at a target temperature of 200-300 deg.C, and vacuumizing the process chamber to a low pressure of 0.05-0.3 mTorr to form a vacuum constant temperature environment in the process chamber.
4. The process for manufacturing a photovoltaic N-type TOPCon cell ALD passivation film according to claim 1, characterized in that: step S1 further includes: the duration is 200-600s after the vacuum constant temperature environment is formed in the process chamber.
5. The manufacturing process of ALD passivation film for photovoltaic N-type TOPCon battery of claim 1, characterized in that: step S2 further includes: introducing O circularly into the process chamber3The method of gas comprises introducing O3Gas for 30-200s, and introducing N2Purging for 0-100s for 1-5 cycles.
6. The process for manufacturing a photovoltaic N-type TOPCon cell ALD passivation film according to claim 1, characterized in that: step S3 further includes: introducing H into the process chamber2The method for O steam comprises the step of introducing H2Introducing O steam for 5-30s, and introducing N2Purging for 0-100s.
7. The manufacturing process of ALD passivation film for photovoltaic N-type TOPCon battery of claim 1, characterized in that: step S4 further includes: TMA and H are alternately introduced into the process chamber2The O vapor is introduced by introducing TMA for 0.5-5s, and introducing N2Blowing for 1-10s, stopping for 0.5-5s, and introducing H2O, the duration is 2-7s, after pausing for 0.5-5s, N is introduced2And (4) purging for 1-10s, stopping for 0.5-5s, namely one cycle, and continuously executing the cycle for 20-70 times.
CN202210856578.1A 2022-07-20 2022-07-20 Manufacturing process of ALD (atomic layer deposition) passivation film of photovoltaic N-type TOPCon battery Pending CN115274923A (en)

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