CN115274436B - Fast recovery diode and preparation method thereof - Google Patents
Fast recovery diode and preparation method thereof Download PDFInfo
- Publication number
- CN115274436B CN115274436B CN202211188013.7A CN202211188013A CN115274436B CN 115274436 B CN115274436 B CN 115274436B CN 202211188013 A CN202211188013 A CN 202211188013A CN 115274436 B CN115274436 B CN 115274436B
- Authority
- CN
- China
- Prior art keywords
- doped region
- type doped
- type
- fast recovery
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000011084 recovery Methods 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 10
- 239000011574 phosphorus Substances 0.000 claims abstract description 10
- 238000000407 epitaxy Methods 0.000 claims abstract description 5
- 238000002347 injection Methods 0.000 claims description 20
- 239000007924 injection Substances 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- 238000001259 photo etching Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 230000007797 corrosion Effects 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 10
- 238000011161 development Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000004026 adhesive bonding Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 abstract description 10
- 238000009826 distribution Methods 0.000 description 10
- 239000000243 solution Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- -1 helium ion Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a fast recovery diode and a preparation method thereof, wherein the preparation method of the fast recovery diode comprises the following steps: providing a substrate, wherein an N-type epitaxial layer is formed on the surface of the substrate through epitaxy; boron is injected into the surface of the epitaxial layer to form a P-type doped region, and the P-type doped region is diffused in a region contacting with the epitaxial layer to form a PIN region; injecting phosphorus into the surface of the P-type doped region to form an N-type doped region; and carrying out platinum diffusion lattice treatment on the surface of the N-type doped region to form a platinum doped region distributed in a lattice manner. The present invention aims to effectively adjust the carrier lifetime.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a fast recovery diode and a preparation method thereof.
Background
At present, researches find that the carrier lifetime adjustment technology can further reduce the dynamic loss of the fast recovery diode, and gradually enable the fast recovery diode to adapt to higher working frequency. And the carrier lifetime adjustment technology widely applied includes two types, particle irradiation and heavy metal diffusion. Wherein, the particle irradiation comprises electron irradiation, hydrogen ion irradiation, helium ion irradiation and the like; heavy metal diffusion includes metal diffusion of gold, platinum, and the like. The electron irradiation process is roughly as follows: the high-energy electron beams are generated by an electron accelerator, lines are formed in a scanning mode to form a surface, an irradiation surface is finally formed, and then the semiconductor chip is subjected to irradiation processing, so that uniform defect distribution is formed inside the chip. Further, for the fast recovery diode chip, the defects generated in the active region range can help to improve the turn-off speed of the fast recovery diode and reduce turn-off loss, but can also improve the conduction voltage drop of the fast recovery diode, so that the service life of a current carrier of the fast recovery diode is reduced.
The invention patent with the prior publication number of CN109638083A discloses a fast recovery diode, which forms a P +/P-/N-composite structure on the front surface of a chip to form approximately symmetrical carrier concentration distribution, thereby generating an effect of adjusting anode emission efficiency, obtaining a more optimized Trr-Vf trade-off relationship, effectively reducing forward turn-off loss, and improving reliability and stability in the reverse recovery process. However, the use of a large-area platinum diffusion process to adjust the carrier lifetime will have limitations in the adjustment range.
Disclosure of Invention
The invention mainly aims to provide a fast recovery diode and a preparation method thereof, and aims to solve the technical problems that the current carrier of the existing fast recovery diode is short in service life and limited in adjustment range.
In order to achieve the above object, the present invention provides a method for preparing a fast recovery diode, the method comprising the steps of:
providing a substrate, wherein an N-type epitaxial layer is formed on the surface of the substrate through epitaxy;
injecting boron into the surface of the epitaxial wafer layer to form a P-type doped region, wherein the P-type doped region is diffused in a region contacting with the epitaxial layer to form a PIN region;
injecting phosphorus into the surface of the P-type doped region to form an N-type doped region;
and carrying out platinum diffusion lattice treatment on the surface of the N-type doped region to form a platinum doped region distributed in a lattice manner.
Optionally, the step of implanting boron into the surface of the epitaxial wafer layer to form a P-type doped region includes:
cleaning and drying the surface of the epitaxial layer in advance;
then, carrying out first oxidation and glue coating treatment, and carrying out exposure, development and corrosion through a P area photoetching plate to form a P type doping injection window;
and injecting boron into the P-type doping injection window to form a P-type doping area.
Optionally, the step of the first oxidation treatment includes:
and growing the surface of the cleaned and dried epitaxial layer in an oxidation furnace at 1000-1150 ℃ to form a first oxide layer with the thickness of 10000A.
Optionally, the step of implanting phosphorus into the surface of the P-type doped region to form a corresponding N-type doped region includes:
carrying out secondary oxidation and glue coating treatment on the surface of the P-type doping area, and carrying out exposure, development and corrosion through an N-area photoetching plate to form an N-type doping injection window;
and then, carrying out phosphorus injection in the N-type doping injection window to form an N-type doping area.
Optionally, the step of second oxidizing comprises:
and growing the surface of the P-type doped region in an oxidation furnace at 1000-1150 ℃ to form a second oxide layer with the thickness of 5000A.
Optionally, the step of performing platinum diffusion lattice treatment on the surface of the N-type doped region to form a platinum doped region in lattice distribution includes:
carrying out third oxidation and gluing treatment on the surface of the N-type doped region, and carrying out exposure, development and corrosion through a platinum region photoetching plate, wherein the platinum region photoetching plate is a lattice-distributed photoetching plate, and a doping injection window in lattice distribution is obtained;
and then carrying out platinum area sputtering on the doping injection windows distributed in the lattice through a sputtering platform to obtain platinum doping areas distributed in the lattice.
Optionally, the step of third oxidizing comprises:
and growing the surface of the N-type doped region in an oxidation furnace at 1000-1150 ℃ to form a third oxidation layer with the thickness of 8000A.
Optionally, the platinum area photolithography mask is in a circular hole, a square hole or a hexagonal array structure with equal distance.
Optionally, the steps further comprise:
sputtering electrodes and gluing the surfaces of the N-type doped region and the platinum doped region, and carrying out exposure, development and corrosion through a metal region photoetching plate to form a target metal lead hole;
and manufacturing a corresponding anode or cathode metal lead in the target metal lead hole.
In order to achieve the above object, the present invention further provides a fast recovery diode, wherein the fast recovery diode is prepared according to any one of the above preparation methods of the fast recovery diode.
The invention provides a fast recovery diode and a preparation method thereof, wherein a substrate is provided, and an N-type epitaxial layer is formed on the surface of the substrate through epitaxy; injecting boron into the surface of the epitaxial wafer layer to form a P-type doped region, wherein the P-type doped region is diffused in a region contacting with the epitaxial layer to form a PIN region; injecting phosphorus into the surface of the P-type doped region to form an N-type doped region; and carrying out platinum diffusion lattice treatment on the surface of the N-type doped region to form a platinum doped region distributed in a lattice manner. In the preparation of the fast recovery diode, a PIN region is formed in a contact region of the P-type doped region and the epitaxial layer by diffusion, and a platinum doped region in lattice distribution is formed on the surface of the N-type doped region, so that the structure distribution has the characteristic of a Schottky diode, the fast recovery diode prepared in the preparation method forms a series structure of the Schottky diode and the PIN diode, the forward switching speed is close to 10ns by experimental verification, and the reverse breakdown voltage can be improved due to the PIN-like structure. And the size of the forward voltage drop can be flexibly adjusted through the platinum doping areas distributed in a lattice manner. In addition, the preparation of the lead electrode process is carried out, and then the passivation of the non-electrode area is carried out, so that the purposes of effectively adjusting the service life of a current carrier and effectively adjusting the softness of a breakdown curve of the diode are finally realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a cross-sectional view of a plurality of groups of fast recovery diodes prepared according to an embodiment of a method for preparing a fast recovery diode according to the present invention;
fig. 2 is a cross-sectional view of a single type of fast recovery diode of the structure shown in fig. 1.
The reference numbers illustrate:
the implementation, functional features and advantages of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive efforts based on the embodiments of the present invention, are within the scope of protection of the present invention.
It should be noted that all the directional indicators (such as upper and lower 8230; etc.) in the embodiments of the present invention are only used for explaining the relative positional relationship between the components in a specific posture (as shown in the drawings), the motion situation, etc., and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature.
Moreover, the technical solutions in the embodiments of the present invention may be combined with each other, but it is necessary to be able to be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent, and is not within the protection scope of the present invention.
Referring to fig. 1, a cross-sectional view of a plurality of groups of fast recovery diodes prepared in an embodiment of a method for preparing fast recovery diodes of the present invention is shown, wherein the method comprises the following steps:
And 4, performing platinum diffusion lattice treatment on the surface of each N-type doped region 4 to form platinum doped regions 5 distributed in a lattice manner. Specifically, the surface of each N-type doped region is grown in an oxidation furnace at 1000 to 1150 ℃ to form a third oxide layer with the thickness of 8000A, gluing is carried out on the surface of the third oxide layer, and exposure, development and corrosion are carried out on the glued third oxide layer through a platinum region photoetching plate, wherein the platinum region photoetching plate is a photoetching plate distributed in a lattice manner, and then a doped injection window distributed in the lattice manner is obtained; further, the platinum area photoetching plate comprises a circular hole, a square hole or a hexagonal array structure with equal distance. And finally, plating platinum, nickel platinum and titanium platinum on the surface of the corroded third oxidation layer through an evaporation table or a sputtering table on the doping injection window distributed in the lattice, thereby obtaining a platinum doping area distributed in the lattice. In addition, the excess platinum is removed, typically with aqua regia, and platinum annealing is carried out at 800-980 ℃.
Step 6, after the metal doping is finished, preparing electrodes by using the metal photoetching plate again, namely performing electrode sputtering and gluing treatment on the surfaces of the N-type doped region and the platinum doped region, and performing exposure, development and corrosion through the metal region photoetching plate to form a target metal lead hole; manufacturing corresponding anode or cathode metal leads in a target metal lead hole, passivating a non-electrode region, finally completing the preparation of batch fast recovery diodes, and cutting a plurality of groups of diodes into single fast recovery diodes according to corresponding devices, wherein the structure distribution of the single fast recovery diodes is shown in fig. 2, and the fast recovery diodes comprise a substrate 1 positioned at the bottom, and a PIN layer 2, a P-type doped region 3, an N-type doped region 4 and a platinum doped region 5 which are sequentially distributed above the substrate 1.
Specifically, the platinum doping regions 5 are embedded in the N-type doping region 4 in a lattice distribution manner, the PIN layer 2 is a PIN structure formed by diffusing the contact region of the P-type doping region 3 and the epitaxial layer on the surface of the substrate 1, meanwhile, corresponding PN junctions are formed in the contact region of the P-type doping region 3 and the N-type doping region 4, and the platinum doping regions 5 are formed on the surface of the N-type doping region 4 in a lattice distribution manner, so that the structure distribution has the characteristic of a Schottky diode, the fast recovery diode prepared in the method is adopted to form a series structure of the Schottky diode and the PIN diode, the forward switching speed can be close to 10ns through experimental verification, and the reverse breakdown voltage can be improved due to the PIN-like structure. And by arranging the platinum doping regions 5 distributed in a lattice manner, the magnitude of the forward voltage drop can be adjusted more flexibly.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, which are within the spirit of the present invention, are included in the scope of the present invention.
Claims (9)
1. A preparation method of a fast recovery diode is characterized by comprising the following steps:
providing a substrate, wherein an N-type epitaxial layer is formed on the surface of the substrate through epitaxy;
injecting boron into the surface of the epitaxial wafer layer to form a P-type doped region, wherein the P-type doped region is diffused in a region contacting with the epitaxial layer to form a PIN region;
injecting phosphorus into the surface of the P-type doped region to form an N-type doped region;
carrying out oxidation treatment and glue coating treatment on the surface of the N-type doping area, and carrying out exposure, development and corrosion through a platinum area photoetching plate which is a photoetching plate distributed in a dot matrix manner to obtain a doping injection window distributed in the dot matrix manner; and then carrying out platinum area sputtering on the doping injection windows distributed in the lattice through a sputtering platform to obtain platinum doping areas distributed in the lattice, so that the fast recovery diode forms a structure in which a Schottky diode and a PIN diode are connected in series.
2. The method for preparing the fast recovery diode of claim 1, wherein the step of implanting boron into the surface of the epitaxial wafer layer to form the P-type doped region comprises the steps of:
cleaning and drying the surface of the epitaxial layer in advance;
then, carrying out first oxidation and glue coating treatment, and carrying out exposure, development and corrosion through a P area photoetching plate to form a P type doping injection window;
and injecting boron into the P-type doping injection window to form a P-type doping area.
3. The method for preparing a fast recovery diode according to claim 2, wherein the step of the first oxidation treatment comprises:
and growing the surface of the epitaxial layer subjected to cleaning and drying treatment in an oxidation furnace at 1000-1150 ℃ to form a first oxide layer with the thickness of 10000A.
4. The method of claim 1, wherein the step of implanting phosphorus into the surface of the P-type doped region to form the N-type doped region comprises:
carrying out secondary oxidation and glue coating treatment on the surface of the P-type doping area, and carrying out exposure, development and corrosion through an N-area photoetching plate to form an N-type doping injection window;
and then, injecting phosphorus into the N-type doping injection window to form an N-type doping area.
5. The method of claim 4, wherein the step of second oxidizing comprises:
and growing the surface of the P-type doped region in an oxidation furnace at 1000-1150 ℃ to form a second oxide layer with the thickness of 5000A.
6. The method of claim 1, wherein the step of oxidizing comprises:
and growing the surface of the N-type doped region in an oxidation furnace at 1000-1150 ℃ to form a third oxidation layer with the thickness of 8000A.
7. The method of claim 1, wherein the Pt region photolithography mask has a circular, square or hexagonal array structure with equal spacing.
8. The method of fabricating a fast recovery diode according to any of claims 1 to 7, wherein the steps further comprise:
sputtering electrodes and gluing the surfaces of the N-type doped region and the platinum doped region, and performing exposure, development and corrosion through a metal region photoetching plate to form a target metal lead hole;
and manufacturing a corresponding anode or cathode metal lead in the target metal lead hole.
9. A fast recovery diode prepared by the method according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211188013.7A CN115274436B (en) | 2022-09-28 | 2022-09-28 | Fast recovery diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211188013.7A CN115274436B (en) | 2022-09-28 | 2022-09-28 | Fast recovery diode and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115274436A CN115274436A (en) | 2022-11-01 |
| CN115274436B true CN115274436B (en) | 2023-01-10 |
Family
ID=83756247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211188013.7A Active CN115274436B (en) | 2022-09-28 | 2022-09-28 | Fast recovery diode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115274436B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5343068A (en) * | 1991-03-28 | 1994-08-30 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Integrated bipolar power device and a fast diode |
| CN106876485A (en) * | 2017-03-06 | 2017-06-20 | 北京世纪金光半导体有限公司 | Double trench MOSFET devices of a kind of SiC of integrated schottky diode and preparation method thereof |
| CN207265065U (en) * | 2017-09-13 | 2018-04-20 | 张家港意发功率半导体有限公司 | A kind of High Voltage Pt Diffused Diode |
| CN109994383A (en) * | 2017-12-18 | 2019-07-09 | 英飞凌科技股份有限公司 | Semiconductor devices and the method for being used to form semiconductor devices |
-
2022
- 2022-09-28 CN CN202211188013.7A patent/CN115274436B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5343068A (en) * | 1991-03-28 | 1994-08-30 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Integrated bipolar power device and a fast diode |
| CN106876485A (en) * | 2017-03-06 | 2017-06-20 | 北京世纪金光半导体有限公司 | Double trench MOSFET devices of a kind of SiC of integrated schottky diode and preparation method thereof |
| CN207265065U (en) * | 2017-09-13 | 2018-04-20 | 张家港意发功率半导体有限公司 | A kind of High Voltage Pt Diffused Diode |
| CN109994383A (en) * | 2017-12-18 | 2019-07-09 | 英飞凌科技股份有限公司 | Semiconductor devices and the method for being used to form semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115274436A (en) | 2022-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7282753B2 (en) | Vertical conducting power semiconducting devices made by deep reactive ion etching | |
| TW504848B (en) | Schottky diode having increased active surface area and method of fabrication | |
| US5156981A (en) | Method of making a semiconductor device of a high withstand voltage | |
| US20010035560A1 (en) | Diode and method for manufacturing the same | |
| CN103578978A (en) | Method for manufacturing high-voltage fast recovery diodes based on silicon-based bonding materials | |
| US20220028979A1 (en) | Silicon carbide diode with reduced voltage drop, and manufacturing method thereof | |
| CN110534559B (en) | Silicon carbide semiconductor device terminal and manufacturing method thereof | |
| CN108074809B (en) | Manufacturing method of fast soft recovery diode chip | |
| US5223442A (en) | Method of making a semiconductor device of a high withstand voltage | |
| CN115274436B (en) | Fast recovery diode and preparation method thereof | |
| WO2020217683A1 (en) | Semiconductor device and production method | |
| CN111370497A (en) | Semiconductor mesa diode chip and manufacturing method thereof | |
| US9236433B2 (en) | Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer | |
| US11495663B2 (en) | Semiconductor device including insulated gate bipolar transistor, diode, and current sense regions | |
| CN110892514B (en) | Method for manufacturing semiconductor device and semiconductor device | |
| US6709914B2 (en) | Manufacturing process of pn junction diode device and pn junction diode device | |
| WO2022265061A1 (en) | Semiconductor device and method for producing semiconductor device | |
| CN110993500A (en) | Fast recovery diode and manufacturing method thereof | |
| WO2006034970A1 (en) | Semiconductor assembly comprising a tunnel contact and method for producing said assembly | |
| KR100320677B1 (en) | method for manufacturing thyristor devices | |
| CN114464530A (en) | High-voltage fast recovery diode structure and manufacturing method | |
| CN117673173A (en) | Transverse silicon carbide Schottky PIN diode resistant to single particle radiation effect | |
| CN117153892A (en) | Radiation-resistant reinforced Schottky diode and manufacturing method thereof | |
| CN114792726A (en) | Anti-irradiation reinforced silicon PNP bipolar transistor and preparation method thereof | |
| CN117393584A (en) | High-voltage planar Schottky diode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |