CN115265809A - Laser alarm based on silicon optical chip - Google Patents
Laser alarm based on silicon optical chip Download PDFInfo
- Publication number
- CN115265809A CN115265809A CN202210773824.7A CN202210773824A CN115265809A CN 115265809 A CN115265809 A CN 115265809A CN 202210773824 A CN202210773824 A CN 202210773824A CN 115265809 A CN115265809 A CN 115265809A
- Authority
- CN
- China
- Prior art keywords
- laser
- optical
- silicon
- micro
- detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 43
- 229910052710 silicon Inorganic materials 0.000 title claims description 43
- 239000010703 silicon Substances 0.000 title claims description 43
- 238000001514 detection method Methods 0.000 claims abstract description 43
- 238000012545 processing Methods 0.000 claims abstract description 14
- 238000002834 transmittance Methods 0.000 claims description 9
- 239000013307 optical fiber Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000003321 amplification Effects 0.000 abstract description 10
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S3/00—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received
- G01S3/78—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received using electromagnetic waves other than radio waves
- G01S3/782—Systems for determining direction or deviation from predetermined direction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/105—Scanning systems with one or more pivoting mirrors or galvano-mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12145—Switch
Abstract
The invention discloses a laser alarm, which comprises an optical receiving system, an optical scanning system, an optical switch, an optical amplification system, a wave division detection system and a signal processing system. The optical system receives incoming laser and transmits the incoming laser to the optical scanning system, the optical scanning system completes scanning by using the micro-vibration mirror, after passing through the optical switch, visible light waveband optical signals directly enter the wavelength division detection system, and near-infrared waveband optical signals enter the wavelength division detection system after being optically amplified; the invention realizes the miniaturization of the laser alarm, can quickly detect threatening laser signals and acquire information of laser azimuth angles and wavelengths, and has high orientation precision and low false alarm rate.
Description
Technical Field
The invention relates to a laser alarm device, in particular to a method for constructing a laser alarm device system of a silicon optical chip for micro-vibration mirror scanning, optical amplification and wave division.
Background
The laser alarm device as a special reconnaissance method can rapidly and accurately identify laser threat signals in a large view field range, determine the direction and threat level and send out alarm signals, has the advantages of large real-time detection range, wide frequency band, simple maintenance, small use area and the like, is an important component of a photoelectric countermeasure technology, and is generally fixed on important facilities such as aircrafts, armored vehicles, satellites and the like. In recent years, laser alarms have been studied in america and russia, and the detection accuracy, resolution, field of view angle, sensitivity, and the like have been greatly improved. Laser alarms are mainly classified into an imaging type, a spectral recognition type and a coherent recognition type according to different detection principles.
The coherent identification type laser alarm utilizes the time coherence principle of laser height to detect, is convenient for filtering off non-laser signals, has the advantages of large detection view field, high angular resolution, capability of detecting laser wavelength and the like, but has complex structure, poor anti-interference capability, great technical difficulty and no practical application.
The spectrum identification type mainly comprises a signal detection device and an information processing device, generally adopts a photodiode as a detection element, judges the threat level of the incoming laser through amplification and signal processing, and has the advantages of good detection effect on the pulse laser, simple system structure, high sensitivity and the like, wide application range, mature technology, but also has the problems of low precision and complex processing circuit.
The imaging laser alarm device is generally composed of an optical system with a large view field and a Charge Coupled Device (CCD) area array, does not need mechanical scanning, and has the advantages of high spatial and angular resolution, high sensitivity, large dynamic range and the like, but the CCD has low reading frame frequency, poor detection capability on pulsed light, high cost, complex image processing technology and less application.
The three laser alarm devices generally have the problems of large volume, high energy consumption, single function, insufficient orientation precision and the like, and along with the development of laser weapons and laser detection equipment, the traditional laser alarm device cannot meet the requirements of modern military.
Disclosure of Invention
The present invention is directed to a laser alarm to solve the above problems.
In order to achieve the purpose, the invention provides the following technical scheme:
a laser alarm based on silicon optical chip is characterized in that the laser alarm comprises an optical receiving system, a micro-vibration mirror scanning system, a silicon-based waveguide switch, a silicon-based waveguide amplifier, a wave division detection system and a signal processing system;
the optical receiving system is used for receiving the attack laser and transmitting the focused attack laser to the micro-vibration mirror scanning system;
the micro-galvanometer scanning system is used for receiving the focusing light beams transmitted by the optical receiving system and is coupled to an optical fiber;
the silicon-based optical waveguide switch is connected with the micro-vibration mirror scanning system, is used for dividing optical fiber incident light into two paths, one path is a visible light wave band, and is connected into the wave division detection system; the other path of near infrared light is connected into a wave division detection system after passing through a silicon-based waveguide amplifier;
the silicon-based waveguide amplifier is used for amplifying the light energy of the near-infrared signal;
the wavelength division detection system is used for dividing the optical signal into a plurality of channels for detection and acquiring the information of the wavelength and the signal power of the incoming laser;
the signal processing system is respectively connected with the micro-vibration mirror scanning system and the wave-splitting detection system to obtain laser signals with threats, and laser wavelength and azimuth angle information of an incoming attack.
Preferably, the optical receiving system is composed of a beam expander or a focusing lens.
Preferably, the micro-vibration mirror is an electrostatic MEMS micro-scanning reflector and is compatible with a CMOS process.
Preferably, the optical switch is a silica-based waveguide optical switch.
Preferably, the silicon-based waveguide amplifier adopts a silicon-based integrated III-V group semiconductor laser amplifier.
Preferably, the arrayed waveguide grating is a multimode output waveguide arrayed waveguide grating (MM-AWG).
As a further scheme of the invention: the silicon-based photoelectric detector adopts a Si-PIN germanium-silicon detector array.
Compared with the prior art, the invention has the beneficial effects that:
the micro-vibration mirror and the silicon optical chip with the optical switch, the optical amplification and the wave-splitting detection are utilized to realize the miniaturization of the laser alarm, the integration level is high, the energy consumption is greatly reduced, the high-speed simultaneous measurement of the wavelength and the azimuth angle of the laser can be carried out on the laser which is attacked, the threat laser can be detected in a short time, the false alarm rate is low, and the angle resolution capability is high.
Drawings
Fig. 1 is a block diagram of a laser alarm based on a silicon optical chip according to the present invention.
Fig. 2 is a schematic structural diagram of an embodiment of a laser alarm based on a silicon optical chip according to the present invention.
FIG. 3 is a schematic view of the scanning of the micro-galvanometer of the present invention.
Fig. 4 is a schematic diagram of a silicon-based optical waveguide switch.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the accompanying drawings and examples, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the present invention.
Referring to fig. 1, the laser alarm of the present embodiment includes an optical receiving system, a micro-mirror scanning system, a silicon-based waveguide switch, a silicon-based waveguide amplifier, a wavelength division detection system, and a signal processing system.
The optical system receives incoming laser, transmits the incoming laser to the micro-vibration mirror for scanning, and then transmits the laser to the silicon-based optical waveguide switch through reflection, one path of the laser directly enters the wave division detection system, the other path of the laser is amplified by the silicon-based waveguide and then transmits the amplified laser to the wave division detection system, and the signal processing system is connected with the optical scanning system and the wave division detection system to obtain laser signals with threat information and incoming laser wavelength and azimuth angle information.
Referring to fig. 2, the optical receiving system is composed of a focusing lens/beam expander 1, and is configured to collect and focus incoming laser light; the optical scanning system consists of a scanning MEMS2 and a micro-vibration mirror control chip, the micro-vibration mirror rapidly swings and scans along a rotating shaft under the control of a micro-vibration mirror driving chip, receives light beams focused by the focusing lens/beam expander 1 and reflects the light beams into the optical fiber laser coupler (3), the optical fiber laser coupler 3 couples space light reflected by the micro-vibration mirror into an optical fiber, and transmits the light into a silicon optical chip in an end face coupling mode, the field angle of the optical receiving system is determined by the scanning field angle of the micro-vibration mirror, and the field angles of the optical receiving system and the micro-vibration mirror are the same; the optical signal enters the silicon optical chip and is transmitted to the silicon-based optical waveguide switch 4, and is divided into two paths, wherein one path of visible light waveband signal light directly enters the wave division detection device for detection, and the other path of near infrared signal light is subjected to energy amplification through the amplifier and then is subjected to wave division detection; the optical amplification is a silicon-based III-V group semiconductor laser amplifier 5, a wave division detection system consists of a multimode output waveguide array waveguide grating (MM-AWG) 6 and a Si-PIN germanium silicon detector array 7, a silicon-based substrate is used as a substrate, and four devices, namely a silicon-based optical waveguide switch (4), the silicon-based III-V group semiconductor laser amplifier (5), the multimode output waveguide array waveguide grating (MM-AWG) 6 and the Si-PIN germanium silicon detector array 7, are integrated on one silicon chip by utilizing a silicon CMOS (complementary metal oxide semiconductor) process, so that the functions of optical channel separation, optical amplification, wave division and detection are realized, the silicon-based integrated III-V group semiconductor laser amplifier adopts a bonding technology, a traditional semiconductor laser amplifier (SOA) is attached to the substrate, the coverage range of amplification wavelength is wide, the optical amplification of a wide spectrum can be realized, the detection sensitivity of the system can be effectively improved by amplifying an optical signal through the amplifier, and the subsequent signal processing is convenient; the multimode output waveguide array waveguide grating can simultaneously cover a plurality of wave bands, and has 8 channels, so that optical signals can be effectively subjected to wave splitting; the dark current of the Si-PIN germanium-silicon detector is only nA, light with the wavelength less than 1.87 mu m can be detected, meanwhile, the responsivity is respectively 0.72A/W and 0.98A/W at the wavelength of 1550nm and 1310nm under the bias of-1V, the bandwidth of 3dB is good, and the detection requirement is met; the signal processing circuit board 8 is connected with the micro-vibration mirror scanning system and the detector acquisition card; if the signals of 8 channels of the signal processing circuit board are all zero or have signals which are close to each other, the signal processing circuit board does not detect the incoming laser; if a single detector has an output signal, and signals of other detectors are zero or weak, the laser which comes into the laser are detected, the laser wavelength which comes into the laser is obtained according to the detector which outputs the signal, and the azimuth angle of the laser which comes into the laser is obtained by combining the vibrating mirror vibration signal.
FIG. 3 is a scanning diagram of a micro-galvanometer, wherein the dotted line is a rotating shaft of the galvanometer, and the galvanometer sends incident light with different angles into the optical fiber coupler by fast scanning along with the shaft.
FIG. 4 is a silicon-based optical waveguide switch, in which two waveguides with width w cross at angle θ to form an X-shaped structure with width wrLength of LrThe reflection area is positioned in the cross area, incident light enters from the port I1, the refractive index emission of the reflection area is changed by external factors, the light input from the end I1 is reflected to the port I4 (in a reflection state), otherwise, light spots are directly transmitted to the end I3, and therefore the function of the optical switch is achieved.
The system specific parameters are determined as follows
1) Determining the aperture of a focusing mirror
Suppose the laser emission power is ptReceived power on detector is prThe signal-to-noise ratio of the detector is SNR, and the detection formula is
In the formula, t0Is the one-way atmospheric transmittance, tTFor transmission system transmittance, TrFor the transmittance of the receiving system, R is the target distance, θtIs the laser divergence angle, ArIs the receiving aperture area. In the space environment, the detection distance is 5000km, the laser emission power is 25W, the laser divergence angle is 100 mu rad, the atmospheric transmittance, the transmittances of the emitting system and the receiving system are 1, the minimum detection power is 10 mu W, and the receiving caliber area A can be calculated according to a formularThe minimum is 0.079 square meter.
2) Determining scan field of view and angular resolution
The vertical field angle is set to be 30 degrees, the scanning angle resolution mainly depends on the maximum scanning angle, the resonant frequency and the system scanning frequency of the micro-vibrating mirror, and the vertical angle resolution formula is as follows:
wherein R isvFor vertical angular resolution, SvFor vertical field angle, P is the system scanning frequency, fvIs the resonant frequency of the micro-vibrating mirror. The scanning angle of the galvanometer is determined by the initial incident beam of the galvanometer and the rotating angle of the galvanometer, and the following formula is satisfied:
Φ＝cos-1(1-2cosθ2sin2α2)
wherein phi is the scanning angle of the galvanometer, theta is the initial incident angle, and alpha is the rotation angle of the galvanometer, but after the determined initial incident angle is set, the scanning angle of the galvanometer is determined by the rotation angle of the galvanometer. The initial incident angle θ =0 °, when the incident beam is incident perpendicular to the rotation axis of the galvanometer, the above formula may be changed
cosΦ＝1-2cosθ2sin2α2＝cos4α
Phi =4 alpha, the total deflection angle of the galvanometer is 2 alpha, and the scanning angle is 2 times of the total deflection angle of the galvanometer; when the initial incident angle theta is not equal to 0 DEG, the scanning angle is affected by the incident angle and the rotating angle of the galvanometer together, the scanning angle phi is less than 4 alpha, and when the initial incident angle is determined, the scanning angle is increased along with the increase of the rotating angle of the galvanometer; when the galvanometer rotation angle is determined, the scan angle decreases as the initial incident angle increases. In order to fully utilize the rotation angle of the galvanometer to obtain the maximum scanning angle, the initial angle is determined to be 0 degrees, and the emergent light beam is emergent perpendicular to the rotating shaft of the galvanometer.
3) Micro galvanometer drive signal
The current and voltage characteristics of the drive signal, which is a current signal, typically a sinusoidal signal, are determined by the electrical signals of the micro-mirrors used. The frequency of the vibration sensor is equal to the resonant frequency f of the MEMS scanning galvanometerv。
4) Data acquisition signal
And reading real-time signals of the Si-PIN germanium-silicon detectors by the circuit board, wherein the reading frequency is the same as the resonance frequency of the micro-vibration mirror.
The invention can quickly detect threatening laser and azimuth angle and wavelength information, has low false alarm rate and high angle resolution capability, greatly reduces the size of the laser alarm by utilizing the micro-vibrating mirror and the silicon optical chip with the optical switch, optical amplification, wave separation and detection, realizes miniaturization and has important function for safety protection of important equipment in military.
Claims (5)
1. A laser alarm based on silicon optical chip is characterized in that the laser alarm comprises an optical receiving system, a micro-vibration mirror scanning system, a silicon-based waveguide switch, a silicon-based waveguide amplifier, a wave division detection system and a signal processing system;
the optical receiving system is used for receiving the attack laser, and transmitting the focused attack laser to the micro-vibration mirror scanning system;
the micro-galvanometer scanning system is used for receiving the focusing light beams transmitted by the optical receiving system and is coupled to an optical fiber;
the silicon-based optical waveguide switch is connected with the micro-vibration mirror scanning system, is used for dividing optical fiber incident light into two paths, one path is a visible light wave band, and is connected into the wave division detection system; the other path of near infrared light is connected into a wave division detection system after passing through a silicon-based waveguide amplifier;
the silicon-based waveguide amplifier is used for amplifying the light energy of the near-infrared signal;
the wavelength division detection system is used for dividing the optical signal into a plurality of channels for detection and acquiring the wavelength and signal power information of an incoming laser;
the signal processing system is respectively connected with the micro-vibration mirror scanning system and the wave-splitting detection system to obtain laser signals with threats, and laser wavelength and azimuth angle information of an incoming attack.
2. The silicon-on-chip laser alarm of claim 1, wherein the micro-galvanometer system comprises a MEMS micro-galvanometer and a driver module.
3. The laser alarm device based on silicon optical chip of claim 1, wherein the wavelength-division detection system is composed of a silicon-based array waveguide grating and a silicon-based photodetector array, and the optical signal is received and detected by the photodetector array after being divided by the array waveguide grating.
4. The silicon optical chip-based laser alarm according to claim 1, wherein the optical receiving system is composed of a beam expander or a focusing lens, and the field angle of the optical receiving system is the same as that of the galvanometer scanning system.
5. The silicon optical chip-based laser alarm device according to claim 4, wherein the size of a light spot imaged on the micro-vibrator mirror through the optical system of the optical receiving system is equal to the mirror surface size of the micro-vibrator mirror; the field angle is 30 °, and the specific parameter index of the optical system is calculated as follows:
laser emission power of PtReceived power at the detector is PrThe signal-to-noise ratio of the detector is SNR, and the detection formula is
In the formula, T0Is a one-way atmospheric transmission rate, TtFor transmission system transmittance, TrFor the transmittance of the receiving system, R is the target distance, θtIs the laser divergence angle, ArIs the receiving aperture area. In the space environment, the detection distance is 5000km, the laser emission power is 25W, the laser divergence angle is 100 mu rad, the atmospheric transmittance, the transmittances of an emission system and a receiving system are 1, the minimum detection power is 10 mu W, and the receiving aperture area a can be calculated according to a formularThe minimum is 0.079 square meter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210773824.7A CN115265809A (en) | 2022-07-01 | 2022-07-01 | Laser alarm based on silicon optical chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210773824.7A CN115265809A (en) | 2022-07-01 | 2022-07-01 | Laser alarm based on silicon optical chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115265809A true CN115265809A (en) | 2022-11-01 |
Family
ID=83764778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210773824.7A Pending CN115265809A (en) | 2022-07-01 | 2022-07-01 | Laser alarm based on silicon optical chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115265809A (en) |
-
2022
- 2022-07-01 CN CN202210773824.7A patent/CN115265809A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11860280B2 (en) | Integrated illumination and detection for LIDAR based 3-D imaging | |
| US11709240B2 (en) | Descan compensation in scanning LIDAR | |
| CN114730008A (en) | Light detection and ranging system with solid state spectral scanning | |
| CN110687518B (en) | On-chip integrated balanced detection receiving system and method | |
| CN101806625B (en) | Static Fourier transform interference imaging spectrum full-polarization detector | |
| KR102628929B1 (en) | LIDAR system with mode field expander | |
| CN110133616B (en) | Laser radar system | |
| US11681199B2 (en) | Light receive scanner with liquid crystal beamsteerer | |
| CN111856481B (en) | Scanner and coaxial and non-coaxial radar system applying same | |
| US10310085B2 (en) | Photonic integrated distance measuring pixel and method of distance measurement | |
| KR20200102900A (en) | Lidar device | |
| CN101308211B (en) | Laser differential scanning detection method and system | |
| US20220123052A1 (en) | Techniques for fiber tip re-imaging in lidar systems | |
| US11789154B2 (en) | Walk-off compensation in remote imaging systems | |
| CN115265809A (en) | Laser alarm based on silicon optical chip | |
| WO2021230465A1 (en) | Optical sensor | |
| CN107765261A (en) | All band three-dimensional EO-1 hyperion laser radar | |
| US11789149B2 (en) | Polarization separation in remote imaging systems | |
| WO2023063920A1 (en) | Walk-off compensation in remote imaging systems | |
| RU2199709C2 (en) | Multi-channel guidance system | |
| CN117008089A (en) | Optical transceiver based on planar waveguide chip and laser radar | |
| CN113703000A (en) | Improved detector with deflection element for coherent imaging | |
| CN116165634A (en) | Miniaturized FMCW radar receiving system | |
| CN115398270A (en) | Electromagnetic wave detection device and distance measuring device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |