CN115241325A - Solar blind area ultraviolet detector based on ZnMgO film and manufacturing method thereof - Google Patents

Solar blind area ultraviolet detector based on ZnMgO film and manufacturing method thereof Download PDF

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Publication number
CN115241325A
CN115241325A CN202210835858.4A CN202210835858A CN115241325A CN 115241325 A CN115241325 A CN 115241325A CN 202210835858 A CN202210835858 A CN 202210835858A CN 115241325 A CN115241325 A CN 115241325A
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mixed solution
ultraviolet detector
manufacturing
znmgo
blind area
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林世宪
廖卫强
肖龙海
陈美谦
张富忠
庄达祥
于文轩
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Jimei University
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Jimei University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a solar blind area ultraviolet detector based on a ZnMgO film and a manufacturing method thereof, wherein the method comprises the following steps: step 1, obtaining a glass substrate for manufacturing a solar blind ultraviolet detector, cleaning and drying; step 2, respectively preparing a zinc isopropoxide mixed solution and a magnesium isopropoxide mixed solution; step 3, using a zinc isopropoxide mixed solution and a magnesium isopropoxide mixed solution to spin-coat and sinter a dried glass substrate to form a ZnMgO film; step 4, preparing an electrode: evaporating a gold-plated material on the film by using the mask; after vapor deposition, the mask portion was removed, and a gold electrode was formed on the surface of the ZnMgO thin film. The invention can obtain ZnMgO films with various Mg doping ratios, and the films are used as the cathode of a solar blind ultraviolet detector and have excellent performance.

Description

Solar blind area ultraviolet detector based on ZnMgO film and manufacturing method thereof
Technical Field
The invention relates to a solar blind area ultraviolet detector based on a ZnMgO film and a manufacturing method thereof.
Background
Zinc oxide (ZnO) is a II-VI compound semiconductor material, has a forbidden band width of 3.37Ev at room temperature, and is widely applied to the fields of planar optical waveguides, transparent electrodes, ultraviolet detectors, ultraviolet light emitting devices and the like. However, with the development of technology, the application requirements of people for devices are continuously increased, and many defects of ZnO in application are increasingly manifested, such as insufficient exciton confinement energy, insufficient band gap and the like. Therefore, people have looked at ZnO-based doping materials. After Mg is doped, because the forbidden bandwidth of MgO is 7.8eV, which is far larger than that of ZnO (3.37 eV), mg to (2 +) has a radius close to that of Zn < 2+ > (Mg to (2 +): 0.057 nm. The solid solubility of Mg in ZnO crystal lattice is small, and the forbidden bandwidth of Zn1-xMgxO (x is more than or equal to 0 and less than or equal to 1) alloy formed according to different doping amounts can be continuously adjusted between 3.37 and 7.8 eV. The wavelength range (159 to 368 nm) corresponding to the forbidden bandwidth variation completely covers the solar blind area ultraviolet radiation wave band which almost does not exist in the near-earth atmosphere, and compared with compound semiconductors such as GaAs, gaN, si, siC and the like, the ZnMgO base photoelectric functional material has better space radiation resistance, thereby becoming a hot point for people to study. On the other hand, the adjustability of the forbidden bandwidth of ZnMgO opens up a new research space for the development of novel semiconductor devices based on 'energy band engineering'.
At present, the common methods for preparing the ZnMgO film include Metal Organic Chemical Vapor Deposition (MOCVD), pulsed Laser Deposition (PLD), molecular Beam Epitaxy (MBE), electron Beam Evaporation Deposition (EBED), magnetron Sputtering (MS), sol-Gel method (Sol-Gel), and the like. The conventional Sol-Gel method (Sol-Gel) basically uses zinc acetate dihydrate and 2, 4-pentanedionate magnesium (Alfa Easer) as a combination or uses zinc nitrate hexahydrate and magnesium nitrate hexahydrate as a combination as a precursor, and prepares the ZnMgO film by using deionized water or organic matters such as methanol as a solvent, acetylacetone or citric acid as a stabilizer and matching with a spin coating method or a dip coating method. The invention provides another method for preparing a ZnMgO film based on Sol-Gel, which takes zinc isopropoxide and magnesium isopropoxide as precursors, 2-methoxyethanol and monoethanolamine as solvents and stabilizers, and combines a spin coating method to prepare the ZnMgO film.
Common methods for preparing ZnMgO films mainly comprise a Metal Organic Chemical Vapor Deposition (MOCVD) method, a Pulse Laser Deposition (PLD) method, a Molecular Beam Epitaxy (MBE) method, an Electron Beam Evaporation Deposition (EBED) method, a magnetron sputtering Method (MS) and the like, and the ZnMgO films prepared by the methods have high cost and long time.
Disclosure of Invention
The invention aims to provide a solar blind area ultraviolet detector based on a ZnMgO film and a manufacturing method thereof.
The technical scheme adopted by the invention is as follows:
a solar blind area ultraviolet detector based on a ZnMgO film and a manufacturing method thereof comprise a glass substrate, wherein the ZnMgO film is arranged on the glass substrate, and a gold electrode is arranged on the upper surface of the ZnMgO film.
Further, the structure of the gold electrode is an MSM structure or an interdigital electrode structure.
Further, the gold electrode had two electrodes with a gap of 85 μm therebetween.
A manufacturing method of a solar blind area ultraviolet detector based on a ZnMgO film comprises the following steps:
step 1, obtaining a glass substrate for manufacturing a solar blind ultraviolet detector, cleaning and drying;
step 2, respectively preparing a zinc isopropoxide mixed solution and a magnesium isopropoxide mixed solution;
step 3, using a zinc isopropoxide mixed solution and a magnesium isopropoxide mixed solution to spin-coat and sinter a dried glass substrate to form a ZnMgO film;
step 4, preparing an electrode: evaporating a gold-plated material on the film by using the mask; after vapor deposition, the mask portion was removed, and a gold electrode was formed on the surface of the ZnMgO thin film.
Further, the size of the glass substrate in step 1 was 2.5 cm by 2.5 cm.
Further, general pollutants on the surface of the glass substrate mainly comprise grease and dust, and the glass substrate is cleaned step by using a cleaning agent of acetone and isopropanol in the step 1; ultrasonically cleaning with acetone for 5min, ultrasonically cleaning with isopropanol for 5min, ultrasonically cleaning with deionized water for 5min, and oven drying.
Further, the method for preparing the zinc isopropoxide mixed solution in the step 2 comprises the following steps: taking 20 ml of 2-methoxyethanol as a solvent and 20 ml of monoethanolamine as a mixed solution stabilizer; mixing a solvent and a mixed solution stabilizer, magnetically stirring at 60 ℃, and gradually adding zinc isopropoxide in the stirring process until the solute concentration is between 0.1 and 0.6 mol/L; stirring for one hour to obtain the zinc isopropoxide mixed solution for standby.
Further, the method for preparing the magnesium isopropoxide mixed solution in the step 2 comprises the following steps: taking 20 ml of 2-methoxyethanol as a solvent and 20 ml of monoethanolamine as a mixed solution stabilizer; mixing a solvent and a mixed solution stabilizer, magnetically stirring at 60 ℃, and gradually adding magnesium isopropoxide in the stirring process until the solute concentration is between 0.1 and 0.6 mol/L; stirring for one hour to obtain the magnesium isopropoxide mixed solution for standby.
Specifically, the solute concentration may be 0.4 mol/L in order to avoid that the solute concentration is too high to be dissolved or that a higher temperature is required to be dissolved).
Further, the specific steps of step 3 are:
step 3-1, respectively taking 10ml of zinc isopropoxide mixed solution and 10ml of magnesium isopropoxide mixed solution by using a pipettor, and uniformly mixing to obtain mixed solution for spin coating;
step 3-2, carrying out plasma treatment on the dried glass substrate for 2min;
3-3, spin-coating the glass substrate for 2 times by using the mixed solution for spin coating, drying, and sintering at the temperature of 550-650 ℃ for 60 min to prepare a ZnMgO film;
further, the setting of the rotating speed and the time of the two spin-coating processes are the same; the setting of each spin coating is as follows: spin-coating at 500 rpm for 10s, and setting the rotation speed at 3000rpm for 40 s; after each spin coating, heating at 120 ℃ for 30 min to dry and reinforce.
Further, the sintering temperature was 600 ℃.
Further, in the step 4, the width of the mask is 85 μm, and the gold electrode is of an MSM structure or an interdigital electrode structure.
According to the technical scheme, the Sol-Gel method (Sol-Gel) using zinc isopropoxide and magnesium isopropoxide as precursors and 2-methoxyethanol and monoethanolamine as solvents and stabilizers is low in cost and simple in control process, the doping proportion of Mg is highly controllable compared with the Sol-Gel method (Sol-Gel) using other reactants, and no other residual organic matters exist after high-temperature heating. The spin-coating method has certain advantages in controlling the film thickness and has high repeatability.
Drawings
The invention is described in further detail below with reference to the drawings and the detailed description;
FIG. 1 is a schematic diagram of a structure of a solar blind area ultraviolet detector based on a ZnMgO film of the present invention;
FIG. 2 is a schematic diagram of a three-dimensional structure of a solar blind area ultraviolet detector based on a ZnMgO film of the present invention;
FIG. 3 is an X-ray diffraction pattern of ZnMgO for the ultraviolet detector of the present invention;
fig. 4 is a graph showing the response of the ultraviolet detector of the present invention to the wavelength of light.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
As shown in figure 1 or 2, the invention discloses a solar blind area ultraviolet detector based on a ZnMgO film, which comprises a glass substrate 1, wherein the ZnMgO film 2 is arranged on the glass substrate 1, and a gold electrode 3 is arranged on the upper surface of the ZnMgO film 2.
Further, the structure of the gold electrode 3 is an MSM structure or an interdigital electrode structure.
Further, as shown in fig. 2, the gold electrode 3 has two electrodes, wherein a and B are gold electrodes, and the mask width is 85 μm, that is, the interval between the two electrodes is 85 μm.
A manufacturing method of a solar blind area ultraviolet detector based on a ZnMgO film comprises the following steps:
step 1, obtaining a glass substrate 1 for manufacturing a solar blind ultraviolet detector, cleaning and drying;
step 2, respectively preparing a zinc isopropoxide mixed solution and a magnesium isopropoxide mixed solution;
step 3, using a zinc isopropoxide mixed solution and a magnesium isopropoxide mixed solution to spin-coat and sinter the dried glass substrate 1 to form a ZnMgO film 2;
step 4, preparing an electrode: evaporating a gold material on the film by using a mask plate; after deposition, the mask portion was removed, and a gold electrode 3 was formed on the surface of the ZnMgO film 2.
Specifically, au is evaporated and deposited on the ZnMgO film 2 in vacuum, then the photoetching process is carried out, which mainly comprises gluing, prebaking, exposing, developing, postbaking, etching and photoresist removing, and finally the prepared electrode is detected.
Further, the size of the glass substrate 1 in step 1 was 2.5 cm by 2.5 cm.
Further, general pollutants on the surface of the glass substrate 1 mainly comprise grease and dust, and the glass substrate 1 is cleaned step by using cleaning agents of acetone and isopropanol in the step 1; ultrasonically cleaning with acetone for 5min, ultrasonically cleaning with isopropanol for 5min, ultrasonically cleaning with deionized water for 5min, and oven drying.
Further, the method for preparing the isopropanol zinc mixed solution in the step 2 comprises the following steps: taking 20 ml of 2-methoxyethanol as a solvent and 20 ml of monoethanolamine as a mixed solution stabilizer; mixing a solvent and a mixed solution stabilizer, magnetically stirring at 60 ℃, and gradually adding zinc isopropoxide in the stirring process until the solute concentration is between 0.1 and 0.6 mol/L; stirring for one hour to obtain the zinc isopropoxide mixed solution for standby.
Further, the method for preparing the magnesium isopropoxide mixed solution in the step 2 comprises the following steps: taking 20 ml of 2-methoxyethanol as a solvent and 20 ml of monoethanolamine as a mixed solution stabilizer; mixing a solvent and a mixed solution stabilizer, magnetically stirring at 60 ℃, and gradually adding magnesium isopropoxide in the stirring process until the solute concentration is between 0.1 and 0.6 mol/L; stirring for one hour to obtain the magnesium isopropoxide mixed solution for standby.
Specifically, the solute concentration may be 0.4 mol/L so as not to be too high in solute concentration to dissolve or require higher temperatures to dissolve).
Further, the specific steps of step 3 are:
step 3-1, respectively taking 10ml of zinc isopropoxide mixed solution and 10ml of magnesium isopropoxide mixed solution by using a pipettor, and uniformly mixing to obtain mixed solution for spin coating;
step 3-2, carrying out plasma treatment on the dried glass substrate 1 for 2min;
step 3-3, spin-coating the glass substrate 1 for 2 times by using the mixed solution for spin coating, drying, and sintering at 550-650 ℃ for 60 min to prepare a ZnMgO film 2;
further, the setting of the rotating speed and the time of the two spin-coating processes are the same; the setting of each spin coating is as follows: spin-coating at 500 rpm for 10s, and setting the rotation speed at 3000rpm for 40 s; after each spin coating, the coating was heated at 120 ℃ for 30 min to dry and consolidate.
Further, the sintering temperature was 600 ℃.
Further, in the step 4, the width of the mask is 85 μm, and the gold electrode 3 is of an MSM structure or an interdigital electrode structure.
FIG. 3 is an X-ray diffraction pattern of the synthesized ZnMgO. The X-ray diffraction pattern of ZnMgO has a significant MgO peak relative to the X-ray diffraction pattern of ZnO.
As shown in FIG. 4, under normal incidence of light, the response diagram of the ultraviolet detector to the wavelength of light is that under 20V bias, the maximum output current response value detected is 0.16 uA, and the wavelength is 310 nm.
By adopting the technical scheme, the Sol-Gel method (Sol-Gel) which takes zinc isopropoxide and magnesium isopropoxide as precursors and 2-methoxyethanol and monoethanolamine as solvents and stabilizers has low cost and simple control process, and compared with the Sol-Gel method (Sol-Gel) of other reactants, the method has the advantages of high controllability on the doping proportion of Mg and no other residual organic matters after high-temperature heating. The spin coating method has certain advantages in controlling the film thickness and has high repeatability.
It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. The embodiments and features of the embodiments in the present application may be combined with each other without conflict. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the detailed description of the embodiments of the present application is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

Claims (10)

1. A manufacturing method of a solar blind area ultraviolet detector based on a ZnMgO film comprises a glass substrate, the ZnMgO film is arranged on the glass substrate, and a gold electrode is arranged on the upper surface of the ZnMgO film, and is characterized in that: the method comprises the following steps:
step 1, obtaining a glass substrate for manufacturing a solar blind ultraviolet detector, cleaning and drying;
step 2, respectively preparing a zinc isopropoxide mixed solution and a magnesium isopropoxide mixed solution;
step 3, spin-coating and sintering a dried glass substrate with a zinc isopropoxide mixed solution and a magnesium isopropoxide mixed solution to form a ZnMgO film;
step 4, preparing an electrode: evaporating a gold-plated material on the film by using the mask; after vapor deposition, the mask portion was removed, and a gold electrode was formed on the surface of the ZnMgO thin film.
2. The manufacturing method of the ZnMgO film-based solar blind area ultraviolet detector as claimed in claim 1, wherein: step 1, cleaning the glass substrate step by using a cleaning agent of acetone and isopropanol; ultrasonically cleaning with acetone for 5min, ultrasonically cleaning with isopropanol for 5min, ultrasonically cleaning with deionized water for 5min, and oven drying.
3. The manufacturing method of the ZnMgO film-based solar blind area ultraviolet detector as claimed in claim 2, wherein: the method for preparing the isopropanol zinc mixed solution in the step 2 comprises the following steps: taking 20 ml of 2-methoxyethanol as a solvent and 20 ml of monoethanolamine as a mixed solution stabilizer; mixing a solvent and a mixed solution stabilizer, magnetically stirring at 60 ℃, and gradually adding zinc isopropoxide in the stirring process until the solute concentration is between 0.1 and 0.6 mol/L; stirring for one hour to obtain the zinc isopropoxide mixed solution for standby.
4. The manufacturing method of the ZnMgO film-based solar blind area ultraviolet detector as claimed in claim 1, wherein: the method for preparing the magnesium isopropoxide mixed solution in the step 2 comprises the following steps: taking 20 ml of 2-methoxyethanol as a solvent and 20 ml of monoethanolamine as a mixed solution stabilizer; mixing a solvent and a mixed solution stabilizer, magnetically stirring at 60 ℃, and gradually adding magnesium isopropoxide in the stirring process until the solute concentration is between 0.1 and 0.6 mol/L; stirring for one hour to obtain the magnesium isopropoxide mixed solution for standby.
5. The method for manufacturing a ZnMgO film-based solar blind area ultraviolet detector as claimed in claim 3 or 4, wherein: the solute concentration was 0.4 mol/L.
6. The manufacturing method of the ZnMgO film-based solar blind area ultraviolet detector as claimed in claim 1, wherein: the specific steps of step 3 are:
step 3-1, respectively taking 10ml of zinc isopropoxide mixed solution and 10ml of magnesium isopropoxide mixed solution by using a pipettor, and uniformly mixing to obtain mixed solution for spin coating;
step 3-2, carrying out plasma treatment on the dried glass substrate for 2min;
and 3-3, spin-coating the glass substrate for 2 times by using the mixed solution for spin coating, drying, and sintering at the temperature of 550-650 ℃ for 60 min to prepare the ZnMgO film.
7. The manufacturing method of the ZnMgO film-based solar blind area ultraviolet detector as claimed in claim 6, wherein: the setting of the rotating speed and the time of the two spin-coating processes are the same; the setting of each spin coating is as follows: spin-coating at 500 rpm for 10s, and setting the rotation speed at 3000rpm for 40 s; after each spin coating, heating at 120 ℃ for 30 min to dry and reinforce.
8. The method for manufacturing the ZnMgO film-based solar-blind area ultraviolet detector as claimed in claim 6, wherein: the sintering temperature was 600 ℃.
9. The method for manufacturing the ZnMgO film-based solar-blind area ultraviolet detector as claimed in claim 1, wherein: in the step 4, the width of the mask is 85 μm, and the gold electrode is of an MSM structure or an interdigital electrode structure.
10. A solar blind area ultraviolet detector based on a ZnMgO film is characterized in that: the ZnMgO film-based solar blind area ultraviolet detector is manufactured and molded by adopting the manufacturing method of any one of claims 1 to 9.
CN202210835858.4A 2022-07-15 2022-07-15 Solar blind area ultraviolet detector based on ZnMgO film and manufacturing method thereof Pending CN115241325A (en)

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FR2981090A1 (en) * 2011-10-10 2013-04-12 Commissariat Energie Atomique PROCESS FOR PREPARING P-TYPE ZINC ZNO OXIDE OR P-TYPE ZNMGO OXIDE
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