CN115241321A - 一种异质结太阳能单面电池的制作方法 - Google Patents

一种异质结太阳能单面电池的制作方法 Download PDF

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CN115241321A
CN115241321A CN202110434675.7A CN202110434675A CN115241321A CN 115241321 A CN115241321 A CN 115241321A CN 202110434675 A CN202110434675 A CN 202110434675A CN 115241321 A CN115241321 A CN 115241321A
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张超华
杨与胜
谢艺峰
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Goldstone Fujian Energy Co Ltd
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Abstract

本发明公开了一种异质结太阳能单面电池的制作方法,包括以下步骤:硅片正、背面制绒,形成金字塔绒面;在制绒后的硅片正、背面沉积非晶硅层;在沉积非晶硅层后的硅片正面沉积透明导电薄膜层、背面沉积透明导电薄膜层,所述背面沉积透明导电膜层为掺铝或其他元素的氧化锌薄膜;在沉积透明导电薄膜层后的硅片背面沉积金属叠层;在沉积金属层后的硅片正、背面形成银浆电极栅线。本发明电池背面沉积掺铝或其他元素的氧化锌薄膜,大幅降低了透明导电膜层成本,同时在背面导电薄膜上沉积电阻率低、成本低的金属层,显著提高了背电极的导电性能,从而可以取消背面栅线电极的细栅,大幅减少了银浆使用量,进而降低电池的银浆栅线电极成本,提高转换效率。

Description

一种异质结太阳能单面电池的制作方法
技术领域
本发明涉及太阳能电池技术领域,更具体地说是,尤其涉及异质结太阳能单面电池的制作方法。
背景技术
随着科学技术的不断发展,太阳能电池已广泛应用与人们的日常生活以及工业中,近年来,太阳能电池生产技术不断进步,生产成本不断降低,转换效率不断提高,太阳能电池发电的应用日益广泛并成为电力供应的重要能源。
异质结太阳能电池是其中一种新型高效的电池技术,其综合了单晶硅太阳能电池和非晶硅太阳能电池的优势,有制备工艺温度低、转换效率更高、高温特性好等特点,因此具有很大的市场潜力。
目前异质结太阳能电池所用透明导电层一般为掺钨氧化铟(IWO)或掺锡氧化铟(ITO),整体制作成本较高,而掺铝、硼、镓或其他元素的氧化锌层成本仅不到ITO/IWO的1/3。
然而异质结太阳能电池整个制备过程都在220℃下进行,背面一般印刷低温银浆作为背电极栅线,低温银浆成本极高,印刷还存在栅线电阻很大的问题,因此显著增加了电池的串联电阻及生产成本,减低了电池的转换效率。
发明内容
针对上述问题,本发明提供了一种减少单晶硅衬底太阳能电池中的银浆使用量,同时采用掺铝、硼、镓或其他元素的氧化锌层替代掺钨氧化铟(IWO)或掺锡氧化铟(ITO)作为背面透明导电薄膜层,降低生产成本,提高转换效率的异质结太阳能单面电池的制作方法。
为解决上述技术问题,本发明所采用的技术方案是:一种异质结太阳能单面电池的制作方法,包括以下步骤:硅片正、背面制绒,形成金字塔绒面;在制绒后的硅片正、背面沉积非晶硅层;在沉积非晶硅层后的硅片正面沉积透明导电薄膜层、背面沉积透明导电薄膜层;在沉积透明导电薄膜层后的硅片背面沉积金属层;在沉积金属层后的硅片正、背面形成银浆电极栅线。
优选的,所述硅片正、背面制绒形成的金字塔绒面宽度为2-15微米,高度为2-13微米。
优选的,所述沉积非晶硅层为通过化学气相沉积技术在制绒后的硅片正面依次沉积第一本征非晶硅薄膜层、第一掺杂非晶硅薄膜层;翻转硅片,在制绒后的硅片背面依次沉积第二本征非晶硅薄膜层、第二掺杂非晶硅薄膜层。
优选的,所述第一掺杂非晶硅薄膜层为n-型非晶硅薄膜层时,所述第二掺杂非晶硅薄膜层则为p-型非晶硅薄膜层;所述第一掺杂非晶硅薄膜层为p-型非晶硅薄膜层时,所述第二掺杂非晶硅薄膜层则为n-型非晶硅薄膜层。
优选的,所述第一本征非晶硅薄膜层、第一参杂非晶硅薄膜层、第二本征非晶硅薄膜层和第二参杂非晶硅薄膜层通过等离子体增强化学气相沉积,沉积厚度均为3~10nm。
优选的,所述正面透明导电薄膜层为ITO层或者掺杂其它元素的氧化铟层,厚度为30~200nm。
优选的,所述背面透明导电薄膜层为掺铝、硼、镓或其他元素的氧化锌层,厚度为30~200nm。
优选的,所述金属层为AL、镍、钛、铬或镍合金中的至少一种。
优选的,所述透明导电薄膜层和金属层通过磁控溅射PVD、活化等离子溅射RPD或蒸镀方式沉积。
优选的,所述银浆电极栅线通过丝网印刷方式形成,所述正面银浆栅线电极为有细栅的多主栅电极,所述背面栅线电极为没有细栅的多主栅电极。
由上述对本发明结构的描述可知,和现有技术相比,本发明具有如下优点:
本发明在电池背面采用掺铝、硼、镓或其他元素的氧化锌层替代掺钨氧化铟(IWO)或掺锡氧化铟(ITO)作为背面透明导电薄膜层,而掺铝、硼、镓或其他元素的氧化锌成本仅不到ITO/IWO的1/3,降低背面透明导电膜层成本,同时在背面透明导电薄膜上沉积电阻率低、成本低的金属层,显著提高了背电极的导电性能,同时取消背面栅线电极的细栅,大幅减少了银浆使用量,从而降低电池的银浆栅线电极成本,同时减少了电流在导电率差的透明导电膜上传输,提高了填充因子,提升了转换效率。
附图说明
构成本申请的一部分的附图用来提供对本发明的进一步理解,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发发明的不当限定。在附图中:
图1为本发明一种异质结太阳能单面电池制作流程示意图;
图2为本发明制绒后的硅片结构示意图;
图3为本发明沉积非晶硅层后的结构示意图;
图4为本发明沉积正、背面透明导电薄膜后的结构示意图;
图5为本发明沉积金属层后的结构示意图;
图6为本发明形成银浆栅线电极后的结构示意图。
具体实施方式
为了使本专利的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
本发明提供了一种异质结太阳能单面电池的制作方法,所述方法包括以下步骤:
S01、硅片正、背面制绒,形成金字塔绒面,如图2所示,在n-型单晶硅片正、背面制绒,形成金字塔绒面的硅片1,所述金字塔绒面宽度为2-15微米,高度为2-13微米;
S02、在制绒后的硅片正、背面沉积非晶硅层,如图3所示,通过化学气相沉积技术在制绒后的硅片1正面依次沉积第一本征非晶硅薄膜层2、第一掺杂n-型非晶硅薄膜层4;翻转硅片1,在制绒后的硅片1背面依次沉积第二本征非晶硅薄膜层3、第二掺杂p-型非晶硅薄膜层5,第一本征非晶硅薄膜层、第一参杂非晶硅薄膜层、第二本征非晶硅薄膜层和第二参杂非晶硅薄膜层的厚度均为3~10nm;
S03、在沉积非晶硅层后的硅片正面沉积透明导电薄膜层,如图4所示,通过磁控溅射PVD、活化等离子溅射RPD或蒸镀方式沉积在制绒后的硅片1正面沉积透明导电薄膜层6,所述透明导电薄膜层6为ITO层或者掺杂其它元素的氧化铟层,厚度为30~200nm;
S04、在沉积非晶硅层后的硅片背面沉积透明导电薄膜层,如图4所示,通过磁控溅射PVD、活化等离子溅射RPD或蒸镀方式沉积在制绒后的硅片1背面沉积透明导电薄膜层7,所述透明导电薄膜层7为掺铝、硼、镓或其他元素的氧化锌层,厚度为30~200nm;
S05、在沉积透明导电薄膜层后的硅片背面沉积金属层,如图5所示,通过磁控溅射PVD、活化等离子溅射RPD或蒸镀方式沉积在制绒后的硅片背面沉积金属层8,所述金属层8为AL、镍、钛、铬或镍合金中的至少一种。所述金属层8厚度为100~500nm,方阻小于0.5Ω/□;
S06、在沉积金属层后的硅片正、背面形成银浆电极栅线,如图6所示,通过丝网印刷在制绒后的硅片1背面印刷银浆电极栅线10,在制绒后的硅片1正面印刷银浆电极栅线9,所述正面银浆栅线电极为有细栅的多主栅电极9,所述背面栅线电极为没有细栅的多主栅电极。
本发明采用上述技术方案,在电池背面采用掺铝、硼、镓或其他元素的氧化锌层替代掺钨氧化铟(IWO)或掺锡氧化铟(ITO)作为背面透明导电薄膜层,而掺铝、硼、镓或其他元素的氧化锌层成本仅不到ITO/IWO的1/3,降低背面透明导电膜层成本,同时在背面透明导电薄膜上沉积电阻率低、成本低的金属层,显著提高了背电极的导电性能,可以取消背面栅线电极的细栅,大幅减少了银浆使用量,从而降低电池的银浆栅线电极成本。同时减少了电流在导电率差的透明导电膜上传输,提高了填充因子,提升了转换效率。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。

Claims (10)

1.一种异质结太阳能单面电池的制作方法,其特征在于,所述方法包括:
硅片正、背面制绒,形成金字塔绒面;
在制绒后的硅片正、背面沉积非晶硅层;
在沉积非晶硅层后的硅片正面沉积透明导电薄膜层;
在沉积非晶硅层后的硅片背面沉积透明导电薄膜层;
在沉积透明导电薄膜层后的硅片背面沉积金属层;
在沉积金属层后的硅片正、背面形成银浆电极栅线。
2.根据权利要求1所述一种异质结太阳能单面电池的制作方法,其特征在于:所述硅片正、背面制绒形成的金字塔绒面宽度为2-15微米,高度为2-13微米。
3.根据权利要求1所述一种异质结太阳能单面电池的制作方法,其特征在于:所述在制绒后的硅片正、背面沉积非晶硅层为通过化学气相沉积技术在制绒后的硅片正面依次沉积第一本征非晶硅薄膜层、第一掺杂非晶硅薄膜层;在制绒后的硅片背面依次沉积第二本征非晶硅薄膜层、第二掺杂非晶硅薄膜层。
4.根据权利要求3所述一种异质结太阳能单面电池的制作方法,其特征在于:所述第一掺杂非晶硅薄膜层为n-型非晶硅薄膜层时,所述第二掺杂非晶硅薄膜层则为p-型非晶硅薄膜层;所述第一掺杂非晶硅薄膜层为p-型非晶硅薄膜层时,所述第二掺杂非晶硅薄膜层则为n-型非晶硅薄膜层。
5.根据权利要求3所述一种异质结太阳能单面电池的制作方法,其特征在于:所述第一本征非晶硅薄膜层、第一参杂非晶硅薄膜层、第二本征非晶硅薄膜层和第二参杂非晶硅薄膜层通过等离子体增强化学气相沉积,沉积厚度均为3~10nm。
6.根据权利要求1所述一种异质结太阳能单面电池的制作方法,其特征在于:所述正面透明导电薄膜层为ITO层或者掺杂其它元素的氧化铟层,厚度为30~200nm。
7.根据权利要求1所述一种异质结太阳能单面电池的制作方法,其特征在于:所述背面透明导电薄膜层为掺铝、硼、镓或其他元素的氧化锌层,厚度为30~200nm。
8.根据权利要求1所述一种异质结太阳能单面电池的制作方法,其特征在于:所述金属层为AL、镍、钛、铬或镍合金中的至少一种。
9.根据权利要求1所述一种异质结太阳能单面电池的制作方法,其特征在于:所述透明导电薄膜层和金属层通过磁控溅射PVD、活化等离子溅射RPD或蒸镀方式沉积。
10.根据权利要求1所述一种异质结太阳能单面电池的制作方法,其特征在于:所述银浆电极栅线通过丝网印刷方式形成,所述正面银浆栅线电极为有细栅的多主栅电极,所述背面栅线电极为没有细栅的多主栅电极。
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