CN115241148A - Intelligent power module and packaging process - Google Patents

Intelligent power module and packaging process Download PDF

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Publication number
CN115241148A
CN115241148A CN202210905111.1A CN202210905111A CN115241148A CN 115241148 A CN115241148 A CN 115241148A CN 202210905111 A CN202210905111 A CN 202210905111A CN 115241148 A CN115241148 A CN 115241148A
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layer
metal layer
power module
chip
power chip
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CN202210905111.1A
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Chinese (zh)
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敖利波
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Zhihao Microelectronics Huizhou Co ltd
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Zhihao Microelectronics Huizhou Co ltd
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Priority to CN202210905111.1A priority Critical patent/CN115241148A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205—Shape
    • H01L2224/32057—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32113—Disposition the whole layer connector protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/3301—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/335—Material
    • H01L2224/33505—Layer connectors having different materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/83024—Applying flux to the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8321—Applying energy for connecting using a reflow oven
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The invention relates to an intelligent power module and a packaging process. This intelligent power module includes: the power chip, the copper bridge and the packaging shell; the power chip is arranged in the packaging shell; a metal connecting part is arranged between the power chip and the copper bridge; the metal connecting part comprises an inert metal layer and a first tin paste layer which are connected with each other, and the inert metal layer is in contact with the upper surface of the power chip; the first tin paste layer is in contact with the copper bridge; an opening is formed in the packaging shell, and one end of the copper bridge is arranged at the opening. The scheme that this application provided, through setting up the inert metal layer, can replace can only carry out the mode of soldering tin through the abrasive paper metal aluminium layer surface oxide film of polishing among the prior art technology, link together power chip and copper bridge through the tin layer for the heat that power chip produced is fine transmits the external world through the copper bridge, easy operation, and efficient.

Description

Intelligent power module and packaging process
Technical Field
The application relates to the technical field of power drive control, in particular to an intelligent power module and a packaging process.
Background
The intelligent power module is a power driver integrating power electronic discrete devices and integrated circuit technology, has the advantages of high integration level, high reliability, self-checking, circuit protection and the like, is particularly suitable for a frequency converter of a driving motor and various inverter power supplies, and is an ideal power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo driving and variable-frequency household appliances.
The intelligent power module internally comprises a power chip (IGBT chip, FRD chip or MOS chip), the power chip can generate heat during working, when the temperature is too high, the service life of the intelligent power module can be seriously influenced, and the current and the capacity of the intelligent power module can be limited, therefore, the heat dissipation performance of the intelligent power module is also an object of important attention in the industry, in the related art, in order to realize high heat dissipation and high current density performance, a copper bridge is adopted to connect the front electrode of the chip in a best mode, and then the copper bridge is exposed out of the surface of the packaging shell so as to better dissipate heat. However, the surface of the front electrode of the power chip is a metal aluminum layer, in the existing process equipment, because the outer surface of the aluminum alloy is provided with a layer of aluminum oxide film, the power chip can not be connected with the copper bridge through soldering tin, in order to solve the problems, the metal aluminum layer is generally heated, then the part of the metal aluminum layer needing to be welded is polished by abrasive paper, the oxide film on the surface of the metal aluminum layer is removed, paraffin is immediately coated on the surface of the metal aluminum layer, because the metal aluminum layer is hot, the paraffin can be immediately melted on the surface of the metal aluminum layer, the polished surface is covered, so that the metal aluminum layer can not immediately generate a new oxide film, and then the chip and the copper bridge are welded together through the soldering tin; however, this method is not only complicated in operation, but also has a weak bonding force between the aluminum metal layer and the tin layer, and is inefficient.
Therefore, an intelligent power module and a packaging process are urgently needed to be designed, in the existing process equipment, the mode that tin soldering can be carried out only by polishing the surface oxide film on the metal aluminum layer through sand paper in the prior art can be replaced, the power chip and the copper bridge are connected together through the tin layer, the heat generated by the power chip is transmitted to the outside through the copper bridge, the operation is simple, and the efficiency is high.
Disclosure of Invention
For overcoming the problem that exists among the correlation technique, this application provides an intelligent power module, and this intelligent power module can only polish metal aluminium lamination surface oxidation film through abrasive paper and carry out the mode of soldering tin through setting up the inert metal layer among the can replacing the prior art technology, removes numerous and diverse step from, links together power chip and copper bridge through the tin layer, easy operation, and efficient.
A first aspect of the present application provides an intelligent power module, including a power chip, a copper bridge, and a package housing; the power chip is arranged in the packaging shell; a metal connecting part is arranged between the power chip and the copper bridge; the metal connecting part comprises an inert metal layer and a first tin paste layer which are connected with each other, and the inert metal layer is in contact with the upper surface of the power chip; the first tin paste layer is in contact with the copper bridge; the inert metal layer is a metal with good weldability; an opening is formed in the packaging shell, and one end of the copper bridge is arranged at the opening.
In one embodiment, the inert metal layer comprises any one of a gold metal layer, a silver metal layer, or a copper metal layer.
In one embodiment, the number of the metal connecting parts is N, a gap is provided between any two metal connecting parts, and N is a natural number greater than 1.
In one embodiment, a lead frame; the lead frame is arranged on the bottom surface of the packaging shell and connected with the power chip through a second tin paste layer.
In one embodiment, the inert metal layer has a circular or elliptical cross-sectional shape.
In one embodiment, the inert metal layer has a diameter in the range of 0.05 to 0.3mm.
In one embodiment, the lead frame is provided with pins; the copper bridge comprises a chip connecting end and a pin connecting end; the chip connecting end is parallel to the lead frame and is connected with the first solder paste layer; the pin connecting end is perpendicular to the lead frame and connected with the pins.
A second aspect of the present application provides an intelligent power module packaging process, which is based on the above intelligent power module, and specifically includes the following steps:
coating a second tin paste layer on the lead frame;
welding the power chip on the lead frame through reflow soldering;
welding an inert metal layer on the upper surface of the power chip;
coating a first tin paste layer on the inert metal layer;
welding a copper bridge on the inert metal layer through reflow soldering;
and packaging the power chip through a plastic package shell.
In one embodiment, the temperature of the first tin paste layer is less than the temperature of the second tin paste layer.
In one embodiment, the difference between the temperature of the first layer of solder paste and the temperature of the second layer of solder paste is greater than or equal to 50 degrees.
The technical scheme provided by the application can comprise the following beneficial effects: the intelligent power module comprises a power chip, a copper bridge and a packaging shell; a metal connecting part is arranged between the power chip and the copper bridge; the metal connecting part comprises an inert metal layer and a first tin paste layer which are connected with each other, and the inert metal layer is metal with good weldability, so that an aluminum layer and the inert metal layer on the power chip can rub with each other under welding pressure and vibration to damage an oxide film on the surface of the aluminum layer during welding, and further metal intermolecular attraction can be generated when the aluminum layer and the inert metal layer approach each other infinitely, so that the inert metal layer can be welded on the aluminum layer on the upper surface of the power chip, the first tin paste layer is coated on the inert metal layer, a copper bridge can be welded on the inert metal layer, a copper bridge can be connected with the power chip, and heat on the power chip can be transferred to the outside of the packaging shell through the copper bridge; compare among the prior art can only polish metal aluminium layer surface oxide film through abrasive paper and carry out the mode of soldering tin, this application through setting up the inert metal layer, in current process equipment, can be in the same place chip and copper bridge welding through first tin cream layer, easy operation, and efficient.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The foregoing and other objects, features and advantages of the application will be apparent from the following more particular descriptions of exemplary embodiments of the application, as illustrated in the accompanying drawings wherein like reference numbers generally represent like parts throughout the exemplary embodiments of the application.
Fig. 1 is a schematic structural diagram of an intelligent power module according to an embodiment of the present application;
fig. 2 is a schematic flow chart of a smart power module packaging process according to an embodiment of the present application.
Reference numerals:
1. a power chip; 2. a copper bridge; 3. packaging the shell; 41. an inert metal layer; 42. a first solder paste layer; 5. a lead frame; 6. and a second solder paste layer.
Detailed Description
Preferred embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While the preferred embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
It should be understood that although the terms "first," "second," "third," etc. may be used herein to describe various information, these information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the present application. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In current process equipment, because there is the one deck aluminium oxide membrane on the aluminum alloy surface, can't weld power chip and copper bridge through direct soldering tin, the heat that leads to power chip to produce transmits the external world through the copper bridge that can't be fine, further influences intelligent power module's radiating efficiency.
To above-mentioned problem, this application embodiment provides an intelligent power module, can be in the same place chip and copper bridge welding through the tin cream layer for the fine copper bridge that passes through of heat that the power chip produced transmits the external world, easy operation, and efficient.
The technical solutions of the embodiments of the present application are described in detail below with reference to the accompanying drawings.
Example one
Referring to fig. 1, fig. 1 is a schematic structural diagram of an intelligent power module according to an embodiment of the present disclosure.
The intelligent power module comprises a power chip 1, a copper bridge 2 and a packaging shell 3; the power chip 1 is arranged in the package shell 3, the package shell 3 can be made of a plastic package material, specifically, the plastic package material can be epoxy resin, an opening is formed in the package shell 3, one end of the copper bridge 2 is arranged at the opening, specifically, one end of the copper bridge 2 can be flush with the opening, and can also extend out of the opening to extend outwards; in order to enhance the heat dissipation effect, the copper bridge 2 may be externally connected to a heat sink, and a heat dissipation substrate may be disposed on the package housing 3.
A metal connecting part is arranged between the power chip 1 and the copper bridge 2; the metal connecting part comprises an inert metal layer 41 and a first tin paste layer 42 which are connected with each other, the inert metal layer 41 is in contact connection with the upper surface of the power chip 1, and specifically, the inert metal layer 41 is welded on the upper surface of the power chip 1 by ultrasonic waves; the inert metal layer 41 is a metal with good solderability, specifically, the inert metal layer 41 includes any one of a gold metal layer, a silver metal layer or a copper metal layer, and preferably, the inert metal layer 41 is a gold metal layer; the first solder paste layer 42 is in contact with the copper bridge 2.
In order to further enhance the stable connection between the metal connecting parts and the copper bridge 2 and reduce the cost, the number of the metal connecting parts is N, a gap is arranged between any two metal connecting parts, and N is a natural number greater than 1; for the convenience of welding, the cross-sectional shape of the inert metal layer 41 is circular or elliptical, and according to the existing process technology and requirements, the diameter of the inert metal layer 41 is in the range of 0.05-0.3mm, and preferably, the diameter of the inert metal layer 41 is in the range of 0.1mm.
In the first embodiment, the intelligent power module includes a power chip, a copper bridge and a package housing; a metal connecting part is arranged between the power chip and the copper bridge; the metal connecting part comprises an inert metal layer and a first tin paste layer which are connected with each other, and the inert metal layer is metal with good weldability, so that an aluminum layer and the inert metal layer on the power chip can rub with each other under welding pressure and vibration to damage an oxide film on the surface of the aluminum layer during welding, and further metal intermolecular attraction can be generated when the aluminum layer and the inert metal layer approach each other infinitely, so that the inert metal layer can be welded on the aluminum layer on the upper surface of the power chip, the first tin paste layer is coated on the inert metal layer, a copper bridge can be welded on the inert metal layer, a copper bridge can be connected with the power chip, and heat on the power chip can be transferred to the outside of the packaging shell through the copper bridge; compare among the prior art can only polish metal aluminium layer surface oxide film through abrasive paper and carry out the mode of soldering tin, this application through setting up the inert metal layer, in current process equipment, can be in the same place chip and copper bridge welding through first tin cream layer, easy operation, and efficient.
Example two
At present, a power chip comprises a normally installed chip or a chip with a vertical structure, when the chip is electrically connected, the chip and a pin need to be connected through an external lead, and the external lead is long, so that the inductance in a current loop is large, the overvoltage of a power semiconductor device can be caused, the high switching loss is caused, and the electromagnetic interference problem such as high-frequency oscillation and the like can also be caused.
In order to solve the above problems, the present application proposes a corresponding scheme, please refer to fig. 1, which specifically includes:
on the basis of the structure of the first embodiment, the intelligent power module further comprises a lead frame 5; the lead frame 5 is arranged on the bottom surface of the package housing 3, specifically, the lead frame 5 is arranged below the power chip 1 and connected with the power chip 1 through a second solder paste layer 6; the lead frame 5 is provided with pins, and the pins are used for establishing connection with other devices through wires on the printed board.
The copper bridge 2 comprises a chip connecting end and a pin connecting end; specifically, the chip connection end and the pin connection end are vertically connected and are in a reverse inverted L shape, that is, the chip connection end is parallel to the lead frame 5, the pin connection end is perpendicular to the lead frame 5, and the length of the chip connection end can be greater than that of the pin connection end; the chip connection end is connected to the first solder paste layer 42, and the pin connection end is connected to the pin.
In this application embodiment, be reverse L shape of falling through setting up the copper bridge, when establishing the chip electricity with the chip and connect, external wire accessible metal connecting portion and copper bridge will contact on the power chip is connected with the pin on the lead frame, can shorten external wire's length greatly, and the width of copper bridge is greater than external wire's width, can both effectively reduce the inductance in the current loop, realize low inductance encapsulation, and then the overvoltage of the power semiconductor device that has avoided the high inductance to lead to, cause higher switching loss to and arouse electromagnetic interference problems such as high-frequency oscillation.
EXAMPLE III
The application also provides an intelligent power module packaging process for preparing the intelligent power module, which specifically comprises the following steps:
s1, coating a second tin paste layer on the lead frame;
in step S1, the lead frame may be sequentially degreased, microetched and immersed in an electrolytic oxidation solution to perform an electrolytic oxidation treatment; the lead frame is subjected to electrolytic oxidation treatment on the basis, so that the lead frame has better surface adhesion performance, and the lead frame and a plastic packaging shell also have better binding force.
The second solder paste layer is high-temperature solder paste with the temperature higher than 210 ℃.
S2, welding the power chip on the lead frame through reflow soldering;
in step S2, a lower surface of a power chip is covered on the second solder paste layer, and the power chip is connected to the lead frame by reflow soldering.
S3, welding an inert metal layer on the upper surface of the power chip;
in step S3, the inert metal layer is welded on the power chip by ultrasonic welding, and during ultrasonic welding, the aluminum layer and the inert metal layer on the power chip rub against each other under welding pressure and vibration to break an oxide film on the surface of the aluminum layer, so that an attractive force between metal molecules is generated when the aluminum layer and the inert metal layer approach each other indefinitely, and the inert metal layer can be welded on the aluminum layer on the upper surface of the power chip.
It should be noted that, because the solder paste is a paste mixture, ultrasonic welding cannot be adopted, for example, metal tin is welded on the surface of the aluminum layer, in the existing process, only the method mentioned in the background art can be adopted, and details are not described here.
S4, coating a first tin paste layer on the inert metal layer;
in step S4, before coating the first solder paste layer on the inert metal layer, it is determined whether the inert metal layer meets the requirement of effective adhesion; if yes, executing step S4; the effective adhesion requirement is that the first tin paste layer can not be wrapped in the inert metal layer, so that the inert metal is prevented from being connected with the copper bridge, intermetallic electron transfer is prevented, and corrosion of the metal is accelerated.
The first solder paste layer is low-temperature solder paste, and the temperature of the first solder paste layer is less than 200 ℃.
S5, welding the copper bridge on the inert metal layer through reflow soldering;
in step S5, the lower surface of the copper bridge is contacted with the first solder paste layer and connected by soldering, so that the circuit and heat on the chip can be transferred through the path of the inert metal body-first solder paste layer-copper bridge-pin or heat sink.
And S6, packaging the power chip through a plastic package shell.
It should be noted that, in order to prevent the second tin paste layer from melting during the furnace passing, the temperature of the first tin paste layer is lower than that of the second tin paste layer, and specifically, the difference between the temperature of the first tin paste layer and the temperature of the second tin paste layer is greater than or equal to 50 degrees.
In the embodiment of the application, the intelligent power module prepared by the intelligent power module packaging process can solve the problems that the aluminum layer on the upper surface of the power chip is not combined or the operation procedure is complex during soldering tin welding under the condition of realizing the best heat dissipation effect, can also effectively realize low-inductance packaging, and has a simple structure and strong universality.
With regard to the apparatus in the above-described embodiment, the specific manner in which each module performs the operation has been described in detail in the embodiment related to the method, and will not be elaborated here.
The aspects of the present application have been described in detail hereinabove with reference to the accompanying drawings. In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments. Those skilled in the art should also appreciate that the acts and modules referred to in the specification are not necessarily required in the present application. In addition, it can be understood that the steps in the method of the embodiment of the present application may be sequentially adjusted, combined, and deleted according to actual needs, and the modules in the device of the embodiment of the present application may be combined, divided, and deleted according to actual needs.
The flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems and methods according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems that perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
The foregoing description of the embodiments of the present application has been presented for purposes of illustration and description and is not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen in order to best explain the principles of the embodiments, the practical application, or improvements made to the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.

Claims (10)

1. An intelligent power module is characterized by comprising a power chip (1), a copper bridge (2) and a packaging shell (3);
the power chip (1) is arranged in the packaging shell (3);
a metal connecting part is arranged between the power chip (1) and the copper bridge (2);
the metal connecting part comprises an inert metal layer (41) and a first tin paste layer (42) which are connected with each other, and the inert metal layer (41) is in contact with the upper surface of the power chip (1); the first layer of solder paste (42) is in contact with the copper bridge (2); wherein the inert metal layer (41) is a metal with good weldability;
an opening is formed in the packaging shell (3), and one end of the copper bridge (2) is arranged at the opening.
2. The smart power module of claim 1,
the inert metal layer (41) comprises any one of a gold metal layer, a silver metal layer or a copper metal layer.
3. The smart power module of claim 1,
the number of the metal connecting parts is N, a gap is formed between any two metal connecting parts, and N is a natural number larger than 1.
4. The smart power module according to claim 2, further comprising a lead frame (5);
the lead frame (5) is arranged on the bottom surface of the packaging shell (3) and is connected with the power chip (1) through a second tin paste layer (6).
5. The smart power module of claim 2,
the cross section of the inert metal layer (41) is circular or elliptical.
6. The smart power module of claim 5,
the diameter range of the inert metal layer (41) is 0.05-0.3mm.
7. The smart power module of claim 4,
pins are arranged on the lead frame (5);
the copper bridge (2) comprises a chip connecting end and a pin connecting end;
the chip connecting end is parallel to the lead frame (5) and is connected with the first tin paste layer (42); the pin connecting end is perpendicular to the lead frame (5) and is connected with the pins.
8. An intelligent power module packaging process, wherein the preparation of the intelligent power module according to claim 7 specifically comprises the following steps:
-applying a second layer of solder paste (6) on the lead frame (5);
welding the power chip (1) on the lead frame (5) through reflow soldering;
welding an inert metal layer (41) on the upper surface of the power chip (1);
applying a first layer of solder paste (42) on the inert metal layer (41);
welding a copper bridge (2) on the inert metal layer (41) through reflow soldering;
and packaging the power chip (1) through a plastic package shell.
9. A smart power module packaging process according to claim 8, wherein the temperature of the first solder paste layer (42) is less than the temperature of the second solder paste layer (6).
10. The smart power module packaging process of claim 9,
the difference between the temperature of the first tin paste layer (42) and the temperature of the second tin paste layer (6) is greater than or equal to 50 degrees.
CN202210905111.1A 2022-07-29 2022-07-29 Intelligent power module and packaging process Pending CN115241148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210905111.1A CN115241148A (en) 2022-07-29 2022-07-29 Intelligent power module and packaging process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210905111.1A CN115241148A (en) 2022-07-29 2022-07-29 Intelligent power module and packaging process

Publications (1)

Publication Number Publication Date
CN115241148A true CN115241148A (en) 2022-10-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210905111.1A Pending CN115241148A (en) 2022-07-29 2022-07-29 Intelligent power module and packaging process

Country Status (1)

Country Link
CN (1) CN115241148A (en)

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