CN115236479A - SiC device-based aging test platform and degradation reason distinguishing method - Google Patents
SiC device-based aging test platform and degradation reason distinguishing method Download PDFInfo
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Abstract
The invention discloses an aging test platform based on a SiC device and a method for distinguishing degradation reasons, wherein the platform comprises a constant temperature box, a power supply module, a signal acquisition device and a signal processing device; the constant temperature box is used for providing preset temperature for the SiC device to be tested; the power supply module is used for providing pulse current for the SiC device to be tested; the signal acquisition device is used for acquiring the static characteristic parameters of the SiC device to be tested before the repeated pulse current test, the static characteristic parameters and the dynamic characteristic parameters of the SiC device to be tested after the repeated pulse current test and the scanning electron microscope section image after the splinter; the signal processing device is used for judging whether the degradation reason of the SiC device to be tested comprises bipolar degradation or gate oxide degradation. By implementing the method, the SiC device to be measured is placed in the thermostat, the accuracy of the measured static characteristic parameters and dynamic characteristic parameters can be improved, and when the degradation reason is judged, the cracked section image of the scanning electron microscope is added, so that the judgment result is more accurate.
Description
Technical Field
The invention relates to the technical field of semiconductor device testing, in particular to an aging test platform based on a SiC device and a degradation reason distinguishing method.
Background
The SiC material has wide forbidden band width, strong critical breakdown field and high thermal conductivity, and is a typical representative of third-generation semiconductors. SiC materials having higher critical breakdown field strengths, better thermal conductivity, lower on-resistance, higher electron saturation velocities, and greater power densities have received much attention in the power semiconductor field. The excellent characteristics of the SiC material also enable high-power electronic equipment based on the SiC device to have lighter weight, smaller volume, faster switching frequency, higher voltage, higher temperature bearing capacity and the like, so that the power density and performance of the whole system are greatly improved.
Bipolar degradation effects can occur in any SiC device under bipolar operating (PN junction, such as the body diode of a MOSFET, when conducting). This is triggered primarily by the presence of Basal Plane Dislocations (BPDs) on the SiC substrate and epitaxy. During bipolar operation, the energy released by the recombination of electrons and holes causes stacking faults to propagate at the BPD. The stacking fault will propagate to the surface of the chip and then stop propagating.
However, at present, systematic analysis is lacked for the reason of degradation of the SiC device, effective decoupling of the reason of degradation cannot be achieved, and a test platform for research and analysis of the reason of degradation is lacked.
Disclosure of Invention
In view of this, the embodiment of the present invention provides an aging test platform based on a SiC device and a method for distinguishing a degradation cause, so as to solve the technical problem that a test platform for research and analysis of a degradation cause is absent in the prior art.
The technical scheme provided by the invention is as follows:
the first aspect of the embodiments of the present invention provides an aging test platform based on a SiC device, including: the device comprises a constant temperature box, a power supply module, a signal acquisition device and a signal processing device; the thermostat is used for providing a preset temperature for the SiC device to be tested arranged in the thermostat, and the preset temperature is 120-200 ℃; the power supply module is used for providing pulse current for the SiC device to be tested; the signal acquisition device is used for acquiring the static characteristic parameters of the SiC device to be detected before the repeated pulse current test, the static characteristic parameters and the dynamic characteristic parameters of the SiC device to be detected after the repeated pulse current test and the section image of the scanning electron microscope after the SiC device is split; and the signal processing device is used for judging whether the degradation reasons of the SiC device to be tested comprise bipolar degradation or gate oxide degradation or not according to the change of the static characteristic parameters, the change of the dynamic characteristic parameters and the scanning electron microscope section image.
Optionally, the SiC device-based burn-in test platform further includes: when the SiC devices to be tested comprise a plurality of printed circuit boards, the SiC devices to be tested are arranged on the printed circuit boards, and each printed circuit board comprises a plurality of SiC devices to be tested; a plurality of printed circuit boards are disposed vertically side-by-side between two insulating support members.
Optionally, the SiC device-based burn-in test platform further includes: the adjustable load resistor is used for adjusting the current in the electrifying loop of the SiC device to be tested, and the test requirements of the SiC devices with different current grades are met.
Optionally, the SiC device-based burn-in test platform further includes: and the protection device is used for protecting the power module and the SiC device to be tested under the short-circuit working condition of the SiC device to be tested.
A second aspect of the embodiments of the present invention provides a method for distinguishing a degradation cause based on a SiC device, including: acquiring a static characteristic parameter of the SiC device to be tested before a repeated pulse current test, a dynamic characteristic parameter and a static characteristic parameter of the SiC device to be tested after the repeated pulse current test and a scanning electron microscope section image after splitting, and placing the SiC device to be tested at a preset temperature, wherein the preset temperature is a working temperature of 120-200 ℃; and judging whether the degradation reason of the SiC device to be tested comprises bipolar degradation or gate oxide degradation according to the change of the static characteristic parameters, the change of the dynamic characteristic parameters and the scanning electron microscope sectional image.
Optionally, the acquiring the static characteristic parameter of the SiC device to be measured before the repeated pulse current test, the dynamic characteristic parameter and the static characteristic parameter after the repeated pulse current test, and the scanning electron microscope sectional image after the splintering includes: collecting static characteristic parameters of the SiC device to be tested before testing; carrying out pulse current test on the SiC device to be tested for preset times, and collecting static characteristic parameters and dynamic characteristic parameters of the SiC device to be tested after the test; repeatedly carrying out pulse current test until the SiC device fails, and collecting the static characteristic parameters and the dynamic characteristic parameters of the SiC device to be tested after each test; and when the SiC device to be tested fails, acquiring the sectional image of the scanning electron microscope after the SiC device to be tested is cracked.
Optionally, repeating the pulsed current test until the SiC device fails, comprising: repeatedly carrying out pulse current test, and judging whether the SiC device to be tested fails according to whether the variation offset of the static characteristic parameters and the dynamic characteristic parameters exceeds a preset value; when the offset exceeds a preset value, judging that the SiC device to be tested is invalid; and when the pulse current does not exceed the preset value, judging that the SiC device to be tested does not fail, and continuously and repeatedly carrying out the pulse current test.
Optionally, judging whether the degradation cause of the SiC device to be tested includes bipolar degradation or gate oxide degradation according to the change of the static characteristic parameter, the change of the dynamic characteristic parameter, and the scanning electron microscope sectional image, includes: judging whether the degradation reason of the SiC device to be tested comprises bipolar degradation or not according to the change of the static characteristic parameters and the change of the dynamic characteristic parameters; and judging whether the degradation reason of the SiC device to be tested comprises gate oxide degradation or not according to the change of the static characteristic parameter, the change of the dynamic characteristic parameter and the scanning electron microscope section image.
Optionally, judging whether the degradation cause of the SiC device to be tested includes gate oxide degradation according to the change of the static characteristic parameter, the change of the dynamic characteristic parameter, and the scanning electron microscope sectional image, includes: judging whether the conditions of gate oxide degradation are met or not according to the change of the static characteristic parameters and the change of the dynamic characteristic parameters; if so, judging whether the scanning electron microscope section image has an abnormal position; and when the degradation reason exists, determining that the degradation reason of the SiC device to be tested comprises gate oxide degradation.
The technical scheme provided by the invention has the following effects:
according to the aging test platform based on the SiC device, provided by the embodiment of the invention, the SiC device to be tested is placed in the thermostat by arranging the thermostat, and the thermostat provides a preset temperature for the SiC device to be tested for carrying out a pulse current test; because the SiC device to be tested generates heat when a repeated pulse current test is carried out, and the junction temperature of the SiC device to be tested is increased, the SiC device to be tested is placed at a constant temperature, the accuracy of the measured static characteristic parameters and dynamic characteristic parameters can be improved, and the accuracy of judging the degradation reason is improved. Meanwhile, when the degradation reason is judged, the static characteristic parameters and the dynamic characteristic parameters are considered, and the cracked section image of the scanning electron microscope is added, so that the judgment result is more accurate.
According to the method for distinguishing the degradation reason of the SiC device, provided by the embodiment of the invention, by collecting the static characteristic parameters and the dynamic characteristic parameters of the SiC device to be tested at the preset temperature, as the SiC device to be tested generates heat during repeated pulse current tests, the junction temperature of the SiC device to be tested is increased, so that the parameters of the SiC device to be tested at the preset temperature are collected, the accuracy of the measured static characteristic parameters and the measured dynamic characteristic parameters can be improved, and the accuracy of judging the degradation reason is improved. Meanwhile, when the degradation reason is judged, the static characteristic parameters and the dynamic characteristic parameters are considered, and the cracked section image of the scanning electron microscope is added, so that the judgment result is more accurate. In addition, through distinguishing degradation reasons, the method is beneficial to understanding the failure mechanism of the high-voltage high-power SiC device, and provides experimental support for promoting the design and modification of the SiC device and further improving the research of the long-term reliability of the SiC device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a block diagram of a SiC device based burn-in platform according to an embodiment of the present invention;
FIG. 2 is a block diagram of an insulating support member and printed circuit board connection according to an embodiment of the present invention;
FIG. 3 is a block diagram of a SiC device based burn-in platform according to another embodiment of the present invention;
FIG. 4 is a schematic circuit connection diagram of a SiC device based burn-in platform according to an embodiment of the present invention;
FIG. 5 is a flow chart of a method for resolving a cause of degradation of a SiC device in accordance with an embodiment of the present invention;
fig. 6 is a flowchart of a method for distinguishing a cause of degradation of a SiC device according to another embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The embodiment of the invention provides an aging test platform based on a SiC device, as shown in FIG. 1, the platform comprises: the device comprises a constant temperature box 1, a power supply module 2, a signal acquisition device 3 and a signal processing device 4; the constant temperature box 1 is used for providing a preset temperature for the SiC device to be tested arranged in the constant temperature box, and the preset temperature is 120-200 ℃; the power module 2 is used for providing pulse current for the SiC device to be tested; the signal acquisition device 3 is used for acquiring static characteristic parameters of the SiC device to be detected before the repeated pulse current test, static characteristic parameters and dynamic characteristic parameters of the SiC device to be detected after the repeated pulse current test and a scanning electron microscope section image after splitting; and the signal processing device 4 is used for judging whether the degradation reason of the SiC device to be tested comprises bipolar degradation or gate oxide degradation according to the change of the static characteristic parameter, the change of the dynamic characteristic parameter and the scanning electron microscope sectional image.
According to the aging test platform based on the SiC device, provided by the embodiment of the invention, the SiC device to be tested is placed in the thermostat by arranging the thermostat, and the thermostat provides a preset temperature for the SiC device to be tested for carrying out a pulse current test; because the SiC device to be tested generates heat when a repeated pulse current test is carried out, and the junction temperature of the SiC device to be tested is increased, the SiC device to be tested is placed at a constant temperature, the accuracy of the measured static characteristic parameters and dynamic characteristic parameters can be improved, and the accuracy of judging the degradation reason is improved. Meanwhile, when the degradation reason is judged, the static characteristic parameters and the dynamic characteristic parameters are considered, and the cracked section image of the scanning electron microscope is added, so that the judgment result is more accurate.
Specifically, when the SiC device TO be tested is a 1200V/20A SiC MOSFET device packaged by TO-247, the preset temperature is 175 ℃; the temperature is closest to the temperature of the device with the type generating heat; the working temperature of the SiC device to be tested can be more accurately maintained. In addition, when the SiC device to be tested is of other types, the preset temperature may also be other temperatures, such as 120 ℃, 150 ℃, 200 ℃ and the like.
In one embodiment, as shown in fig. 2, the SiC device-based burn-in platform further comprises: when the SiC device to be tested comprises a plurality of printed circuit boards, the SiC device to be tested is arranged on the printed circuit boards, and each printed circuit board comprises a plurality of SiC devices to be tested; a plurality of printed circuit boards are disposed vertically side-by-side between two insulating supports.
Specifically, in this embodiment, 20 SiC devices to be tested can be disposed in each Printed Circuit Board (PCB). When more than 20 SiC devices to be tested exist, a plurality of PCB boards are required to be arranged; if the number of SiC devices to be tested is large, the PCB boards occupy a large area when being directly arranged in the incubator, so that two insulating supporting pieces are arranged, and the PCB boards are vertically arranged between the two insulating supporting pieces side by side, so that the occupied area is reduced, and the modularized assembly is realized; simultaneously, the insulating support piece that sets up can also realize the insulating isolation between a plurality of PCB boards. In addition, if the number of the PCBs is large, the PCBs cannot be arranged between the two insulating supporting pieces, and more insulating supporting pieces can be arranged.
In one embodiment, the SiC device-based burn-in platform further comprises: the adjustable load resistor is used for adjusting the current in the power-on loop of the SiC device to be tested, and the testing requirements of the SiC devices with different current grades are met. In addition, the method further comprises the following steps: and the protection device is used for protecting the power module and the SiC device to be tested under the short-circuit working condition of the SiC device to be tested.
Specifically, the adjustable load resistor is connected in series with the SiC device to be tested, and when the SiC device to be tested contains different current grades, the current in the circuit is changed by adjusting the resistance value of the adjustable load resistor, so that the test of the SiC device to be tested with different current grades can be realized. The protection device specifically comprises a protection switch and a fuse, wherein the protection switch is connected with the SiC device to be tested in series, and when a short circuit occurs, the circuit can be disconnected.
In one embodiment, as shown in fig. 3, the SiC device-based burn-in test platform specifically includes: the power supply module 2 is used for providing grid voltage of 0-10000V for each device to be tested, and modulating the emitted current into pulse current with adjustable time interval by adjusting the duty ratio of the emitted signal; the power module 2 is positioned outside the constant temperature box 1 and is connected with positive and negative pole terminals on the PCB through metal leads; the constant temperature box 1 can provide constant temperature conditions of 120-200 ℃ for the constant temperature box 1; the protection switch and fuse 5 is used for protecting the power module 2 and other SiC devices to be tested under the short-circuit working condition of the devices; the adjustable load resistor 6 is used for limiting the loop current for devices with different current grades; the device to be tested customizes the clamp 7: the device to be tested customizing clamp 7 can be changed in a modularization mode so as to adapt to SiC devices in different packaging modes; the signal acquisition device 3 comprises a current acquisition card, the current acquisition card 6 is positioned outside the incubator and is connected with positive and negative pole terminals on the PCB through metal leads, current data can be recorded every 1S-10 min, and the signal acquisition device 3 also comprises a power device analyzer for measuring static characteristic parameters and dynamic characteristic parameters of the SiC device to be measured; the signal processing device 4 is connected with the signal acquisition device 3 through a data line, can arrange the data recorded by the signal acquisition device 3 and draw a test pattern, and judges whether the degradation reason of the SiC device to be tested comprises bipolar degradation or gate oxide degradation or not according to the drawn pattern and the fractured section image of the scanning electron microscope.
Specifically, as shown in fig. 4, in this embodiment, the adjustable load resistance 3, the SiC device under test, and the protection device are provided in series in the oven. When the to-be-tested SiC device comprises a plurality of adjustable loads and the protection device, the adjustable loads and the protection device respectively comprise a plurality of adjustable loads, namely the to-be-tested SiC device, the adjustable load resistor and the protection device are arranged in a one-to-one mode and are connected in series.
The embodiment of the invention also discloses a method for distinguishing the degradation reason based on the SiC device, as shown in FIG. 5, the method comprises the following steps:
step S101: the method comprises the steps of collecting static characteristic parameters of the SiC device to be tested before repeated pulse current tests, dynamic characteristic parameters and static characteristic parameters of the SiC device to be tested after repeated pulse current tests and scanning electron microscope section images after splinting, and placing the SiC device to be tested at a preset temperature, wherein the preset temperature is 120-200 ℃ of working temperature.
Specifically, the parameter acquisition process realizes the acquisition of static characteristic parameters of the SiC device to be tested before the test in the following way; carrying out pulse current test on the SiC device to be tested for preset times, and collecting static characteristic parameters and dynamic characteristic parameters of the SiC device to be tested after the test; repeatedly carrying out pulse current test until the SiC device fails, and collecting the static characteristic parameters and the dynamic characteristic parameters of the SiC device to be tested after each test; and when the SiC device to be tested fails, acquiring the sectional image of the scanning electron microscope after the SiC device to be tested is cracked.
The static characteristic parameters are tested by a power device analyzer with the model of agent B1505A, and the dynamic characteristic parameters are tested by a power device analyzer with the model of LMSYS TRds 4045. The measured static characteristic parameters include an output characteristic curve I D －V DS Transition characteristic curve I D －V GS ，I D On-resistance R at =20A DS(on) Threshold voltage V GS(th) Transconductance g fs Gate leakage current I GSS Drain leakage current I DSS Body diode drop V F Maximum reverse recovery current I rm And so on. The dynamic characteristic parameter comprises a body diode characteristic curve and a rise time t determined by the curve r Time of fall t f Turn on delay t d(on) Turn-off delay t d(off) On-off loss E on Turn-off loss E off And so on.
Step S102: and judging whether the degradation reason of the SiC device to be tested comprises bipolar degradation or gate oxide degradation according to the change of the static characteristic parameters, the change of the dynamic characteristic parameters and the scanning electron microscope sectional image.
Wherein the bipolar degradation is determined by a change in the static characteristic parameter and a change in the dynamic characteristic parameter. Specifically, when judging whether the degradation cause of the SiC device to be tested includes bipolar degradation, the determination is made by judging the change of the body diode characteristic curve and the body diode voltage drop. For example, as the number of pulse currents increases, if the body diode characteristic curve of the device continues to shift left or the body diode voltage drop continues to increase, the reverse current recovery characteristics are compared; if the absolute value of the maximum reverse recovery current is reduced, indicating that the degradation reason of the SiC device to be tested comprises bipolar degradation; otherwise, it does not.
When judging whether the gate oxide degradation is included, judging whether the conditions of the gate oxide degradation are met according to the change of the static characteristic parameters and the change of the dynamic characteristic parameters; if so, judging whether the scanning electron microscope section image has an abnormal position; and when the degradation reason exists, determining that the degradation reason of the SiC device to be tested comprises gate oxide degradation.
Specifically, when determining whether gate oxide degradation is involved, the transfer characteristic curve of the device at low current (i.e. transfer characteristic curve I in the static characteristic parameter) is determined first D －V GS ) Whether the movement is continued to the left or not and whether the threshold voltage is continuously reduced or not are continuously reduced, if the movement is yes, a section image of the scanning electron microscope after the splitting is obtained, whether a breakdown point or a foreign body exists in a gate oxide layer structure in the image or not is judged, and if the breakdown point or the foreign body exists, the SiC device to be tested is determinedThe degradation cause includes gate oxide degradation.
According to the method for distinguishing the degradation reason of the SiC device, provided by the embodiment of the invention, by collecting the static characteristic parameters and the dynamic characteristic parameters of the SiC device to be tested at the preset temperature, as the SiC device to be tested generates heat during repeated pulse current tests, the junction temperature of the SiC device to be tested is increased, so that the parameters of the SiC device to be tested at the preset temperature are collected, the accuracy of the measured static characteristic parameters and the measured dynamic characteristic parameters can be improved, and the accuracy of judging the degradation reason is improved. Meanwhile, when the degradation reason is judged, the static characteristic parameters and the dynamic characteristic parameters are considered, and the cracked section image of the scanning electron microscope is added, so that the judgment result is more accurate. In addition, through distinguishing degradation reasons, the method is beneficial to understanding the failure mechanism of the high-voltage high-power SiC device, and provides experimental support for promoting the design modification of the SiC device and further improving the long-term reliability of the SiC device.
In one embodiment, repeating the pulsed current test until the SiC device fails comprises: repeatedly carrying out pulse current test, and judging whether the SiC device to be tested fails according to whether the variation offset of the static characteristic parameters and the dynamic characteristic parameters exceeds a preset value; when the offset exceeds a preset value, judging that the SiC device to be tested is invalid; and when the pulse current does not exceed the preset value, judging that the SiC device to be tested does not fail, and continuously and repeatedly carrying out the pulse current test. Wherein the preset value is 10%. Specifically, the offset exceeding the preset value is used as a device failure criterion instead of complete failure of the device, so that the device aging reason can be found, and the device research and development and the device production can be accelerated.
In one embodiment, as shown in fig. 6, the method for distinguishing the degradation cause of the SiC device is implemented by the following steps:
(1) Aiming at the voltage and current level of the SiC power MOSFET discrete device to be detected, adjusting the adjustable resistor to a corresponding resistance value according to R = V/I; for example, for a 1200V/20A SiC MOSFET device packaged by TO-247, the voltage value of the power module is set TO 1200V, the adjustable load resistance value is set TO 60 omega, and the time interval between two pulses is set TO 30S.
(2) The static parameters of the device at 175 ℃ were measured using an agent B1505A before the experiment, including the output characteristic curve I D －V DS Transition characteristic curve I D －V GS ，I D On-resistance R at =20A DS(on) Threshold voltage V GS(th) Transconductance g fs Gate leakage current I GSS Drain leakage current I DSS Body diode drop V F Maximum reverse recovery current I rm (ii) a The body diode characteristic curve of the device is measured by using LMSYS TRds 4045, and the rising time t is obtained from the curve r Time of fall t f Turn on delay t d(on) Turn-off delay t d(off) And opening loss E on Turn-off loss E off And the like.
(3) Placing the SiC device to be tested on a customizing clamp of the device to be tested, and connecting a protection switch, a fuse, an adjustable load resistor and the customizing clamp of the device to be tested by using a copper bar; and putting the connected structure into a thermostat, connecting a protection switch, a fuse and a power module by using a metal wire through a thermostat connecting hole, connecting a device to be tested customized clamp, a current acquisition card and a signal processing device by using a data signal wire through the thermostat connecting hole, and setting the temperature of the thermostat to be 175 ℃.
(4) And adjusting the duty ratio of the output signal of the power supply module so as to modulate the emitted current into pulse current with adjustable time intervals. Repeating the pulse current test, and repeating the static characteristic and dynamic characteristic parameters of the device after every 25 times of pulse current tests;
(5) And (4) repeating the steps (2) to (4) and carrying out a plurality of pulse current tests. Judging whether the offset of the obtained static characteristic parameter and the dynamic characteristic parameter exceeds 10 percent; when the pulse is exceeded, stopping the pulse test; if not, continuing to perform the pulse current test until the offset of the parameter exceeds 10 percent.
(6) And comparing and analyzing the static characteristic parameters and the offset of the dynamic characteristic parameters of the SiC MOSFET after every 25 times of pulse current tests, and distinguishing the degradation reasons of the device.
(7) Determining whether bipolar degradation is included in the degradation cause of the SiC MOSFET: if the body diode characteristic curve of the device continuously shifts to the left, the body diode voltage drop continuously increases; and the absolute value of the maximum reverse recovery current is reduced, the cause of degradation of the device includes bipolar degradation.
(8) Determining whether the degradation cause of the SiC MOSFET comprises gate oxide degradation, wherein as the number of applied pulse currents increases, a transfer characteristic curve under a small current of the device continuously shifts to the left, and the threshold voltage continuously decreases, then observing the structure of a gate oxide layer of the device through SEM (scanning electron microscope) section test, and if an abnormality (a breakdown point, a foreign matter and the like) exists, proving that the degradation cause of the SiC MOSFET comprises gate oxide degradation.
Although the present invention has been described in detail with respect to the exemplary embodiments and the advantages thereof, those skilled in the art will appreciate that various changes, substitutions and alterations can be made to the embodiments without departing from the spirit and scope of the invention as defined by the appended claims. For other examples, one of ordinary skill in the art will readily appreciate that the order of the process steps may be varied while maintaining the scope of the present invention.
Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present invention, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present invention. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.
Claims (9)
1. An aging test platform based on a SiC device is characterized by comprising: the device comprises a thermostat, a power supply module, a signal acquisition device and a signal processing device;
the constant temperature box is used for providing a preset temperature for the SiC device to be tested arranged in the constant temperature box, and the preset temperature is a working temperature of 120-200 ℃;
the power supply module is used for providing pulse current for the SiC device to be tested;
the signal acquisition device is used for acquiring the static characteristic parameters of the SiC device to be detected before the repeated pulse current test, the static characteristic parameters and the dynamic characteristic parameters of the SiC device to be detected after the repeated pulse current test and the section image of the scanning electron microscope after the SiC device is split;
and the signal processing device is used for judging whether the degradation reason of the SiC device to be tested comprises bipolar degradation or gate oxide degradation according to the change of the static characteristic parameter, the change of the dynamic characteristic parameter and the scanning electron microscope sectional image.
2. The SiC device-based burn-in platform of claim 1, further comprising: a plurality of printed circuit boards and at least two insulating support members,
when the SiC device to be tested comprises a plurality of SiC devices, the SiC devices to be tested are arranged on a plurality of printed circuit boards, and each printed circuit board comprises a plurality of SiC devices to be tested;
a plurality of printed circuit boards are disposed vertically side-by-side between two insulating supports.
3. The SiC device based burn-in platform of claim 1, further comprising: the adjustable load resistor is used for adjusting the current in the power-on loop of the SiC device to be tested, and the testing requirements of the SiC devices with different current grades are met.
4. The SiC device-based burn-in platform of claim 1, further comprising: and the protection device is used for protecting the power module and the SiC device to be tested under the short-circuit working condition of the SiC device to be tested.
5. A method for distinguishing degradation causes based on SiC devices is characterized by comprising the following steps:
acquiring a static characteristic parameter of the SiC device to be tested before a repeated pulse current test, a dynamic characteristic parameter and a static characteristic parameter of the SiC device to be tested after the repeated pulse current test and a scanning electron microscope section image after splitting, and placing the SiC device to be tested at a preset temperature, wherein the preset temperature is a working temperature of 120-200 ℃;
and judging whether the degradation reason of the SiC device to be tested comprises bipolar degradation or gate oxide degradation according to the change of the static characteristic parameters, the change of the dynamic characteristic parameters and the scanning electron microscope sectional image.
6. The method for distinguishing the degradation cause of the SiC device according to claim 5, wherein the step of collecting the static characteristic parameters of the SiC device to be tested before the repeated pulse current test, the dynamic characteristic parameters and the static characteristic parameters of the SiC device after the repeated pulse current test and the section image of the scanning electron microscope after the splintering comprises the following steps:
collecting static characteristic parameters of the SiC device to be tested before testing;
carrying out pulse current test on the SiC device to be tested for preset times, and collecting static characteristic parameters and dynamic characteristic parameters of the SiC device to be tested after the test;
repeatedly carrying out pulse current test until the SiC device fails, and collecting the static characteristic parameters and the dynamic characteristic parameters of the SiC device to be tested after each test;
and when the SiC device to be tested fails, acquiring the sectional image of the scanning electron microscope after the SiC device to be tested is cracked.
7. The method for distinguishing the cause of degradation of the SiC device according to claim 6, wherein repeating the pulse current test until the SiC device fails comprises:
repeatedly carrying out pulse current test, and judging whether the SiC device to be tested fails according to whether the variation offset of the static characteristic parameters and the dynamic characteristic parameters exceeds a preset value;
when the offset exceeds a preset value, judging that the SiC device to be tested is invalid;
and when the preset value is not exceeded, judging that the SiC device to be tested does not lose efficacy, and continuously and repeatedly carrying out the pulse current test.
8. The method for distinguishing the degradation cause of the SiC device according to claim 5, wherein the step of judging whether the degradation cause of the SiC device to be tested comprises bipolar degradation or gate oxide degradation according to the change of the static characteristic parameter, the change of the dynamic characteristic parameter and the scanning electron microscope sectional image comprises the following steps:
judging whether the degradation reason of the SiC device to be tested comprises bipolar degradation or not according to the change of the static characteristic parameters and the change of the dynamic characteristic parameters;
and judging whether the degradation reason of the SiC device to be tested comprises gate oxide degradation or not according to the change of the static characteristic parameter, the change of the dynamic characteristic parameter and the scanning electron microscope section image.
9. The method for distinguishing the degradation cause of the SiC device according to claim 8, wherein judging whether the degradation cause of the SiC device to be tested includes gate oxide degradation according to the change of the static characteristic parameter, the change of the dynamic characteristic parameter and the scanning electron microscope sectional image comprises:
judging whether the conditions of gate oxide degradation are met or not according to the changes of the static characteristic parameters and the dynamic characteristic parameters;
if so, judging whether the scanning electron microscope section image has an abnormal position;
and if so, determining the degradation reasons of the SiC device to be tested, including gate oxide degradation.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116879702A (en) * | 2023-07-11 | 2023-10-13 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Online diagnosis method, system and device for power cycle degradation mechanism of SiC MOSFET |
| CN117148092A (en) * | 2023-11-01 | 2023-12-01 | 深圳基本半导体有限公司 | Test method and device for accelerating bipolar degradation of SiC MOSFET |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116879702A (en) * | 2023-07-11 | 2023-10-13 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Online diagnosis method, system and device for power cycle degradation mechanism of SiC MOSFET |
| CN116879702B (en) * | 2023-07-11 | 2024-04-23 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Online diagnosis method, system and device for power cycle degradation mechanism of SiC MOSFET |
| CN117148092A (en) * | 2023-11-01 | 2023-12-01 | 深圳基本半导体有限公司 | Test method and device for accelerating bipolar degradation of SiC MOSFET |
| CN117148092B (en) * | 2023-11-01 | 2024-03-12 | 深圳基本半导体有限公司 | Test method and device for accelerating bipolar degradation of SiC MOSFET |
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