CN115223828A - Growing LaB 6 Method of nanowire electron emission unit - Google Patents
Growing LaB 6 Method of nanowire electron emission unit Download PDFInfo
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- CN115223828A CN115223828A CN202210998741.8A CN202210998741A CN115223828A CN 115223828 A CN115223828 A CN 115223828A CN 202210998741 A CN202210998741 A CN 202210998741A CN 115223828 A CN115223828 A CN 115223828A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/02—Boron; Borides
- C01B35/04—Metal borides
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
Abstract
The invention provides a growing LaB 6 A method of nanowire electron emission units, the method comprising: providing a substrate; forming a first film layer on one side of the substrate, wherein the first film layer is provided with a groove of a target pattern; forming a catalyst film layer on one side of the first film layer, which is far away from the substrate, wherein the catalyst film layer at least fills the groove; removing the first film layer; growing LaB on the catalyst film layer 6 Nanowire electron emission units. The growth LaB provided by the invention 6 The method of nanowire electron emission unit can realize patterned growth of LaB 6 A nanowire electron emission unit; the method can well control the structure density of the nano-wire, so that the shielding effect of the electron emission unit is reduced, and the release of the field emission performance is obviously improved; and are combinedAnd the field emission current density is also obviously improved.
Description
Technical Field
The invention relates to the technical field of materials and electron sources, in particular to a growing LaB 6 Method of nanowire electron emission units.
Background
With the development of the field of integrated circuits, the array type electron source gradually enters the field of view of researchers. Compared with the conventional point electron source, the field emission cathode array has many unique advantages such as being operable at room temperature, having an emission current density several orders of magnitude higher than that of the conventional point electron source, being operable at low voltage modulation, having low power consumption, having excellent switching characteristics, and being instantaneously activated. These advantages make it promising for applications in new fields such as high-resolution flat panel displays, microwave devices, high-brightness light sources, high-speed switching devices, various electron beam instruments, and the like.
However, in the market or laboratory, most of the field emission array electron sources have to use sharpening method to process the tip array, such as using refractory metal tip arrays of tungsten, molybdenum, etc. as the cathode electron source, in order to obtain excellent field emission performance. The point array has the disadvantages that the field emission device is complex in process and high in manufacturing cost, the work function of the cathode material is generally high, and high field emission control voltage is needed, so that excellent field emission performance cannot be well released, and therefore the mode of processing the point array by adopting a sharpening method needs to be replaced.
Disclosure of Invention
In view of the above, the present invention provides a method for growing LaB 6 The technical scheme of the method for the nanowire electron emission unit is as follows:
growth LaB 6 A method of nanowire electron emission units, the method comprising:
providing a substrate;
forming a first film layer on one side of the substrate, wherein the first film layer is provided with a groove of a target pattern;
forming a catalyst film layer on one side of the first film layer, which is far away from the substrate, wherein the catalyst film layer at least fills the groove;
removing the first film layer;
growing LaB on the catalyst film layer 6 Nanowire electron emission units.
Preferably, laB is grown as described above 6 In the method for nanowire electron emission unit, the first film layer is a photoresist film layer, the first film layer is formed on one side of the substrate, the first film layer has a groove of a target pattern, and the method includes:
and forming the photoresist film layer on one side of the substrate, wherein the photoresist film layer is provided with a groove of a target pattern.
Preferably, laB is grown as described above 6 In the method for nanowire electron emission unit, the forming a catalyst film layer on the side of the first film layer away from the substrate, the catalyst film layer at least filling the groove, includes:
and forming a catalyst film layer on one side of the first film layer, which is far away from the substrate, by using vacuum coating equipment, wherein the catalyst film layer at least fills the groove.
Preferably, laB is grown as described above 6 In the method of the nanowire electron emission unit, the vacuum coating apparatus includes:
the device comprises a base and a chamber positioned on the base; the fixing frame is positioned in the cavity and fixed on the base; the heating device is positioned in the cavity and fixed on the base; the evaporation boat is positioned on one side of the heating device, which is far away from the base;
forming a catalyst film layer on one side of the first film layer, which is far away from the substrate, by using vacuum coating equipment, wherein the method comprises the following steps:
fixing the substrate with the first film layer on the fixing frame, and putting a catalyst into the evaporation boat, wherein the first film layer is positioned right above the evaporation boat;
and under the vacuum condition, controlling the heating device to heat the evaporation boat so as to form a catalyst film layer on one side of the first film layer, which is far away from the substrate.
Preferably, laB is grown as described above 6 In the method for nanowire electron emission unit, the degree of vacuum under the vacuum condition is less than or equal to 3 x 10 -4 Pa。
Preferably, laB is grown as described above 6 In the method of the nanowire electron emission unit, the evaporation boat is a tungsten evaporation boat or a molybdenum evaporation boat.
Preferably, laB is grown as described above 6 In the method of nanowire electron emission unit, laB is grown on the catalyst film layer 6 A nanowire electron emission unit comprising:
growing LaB on the catalyst film layer by chemical vapor deposition 6 Nanowire electron emission units.
Preferably, laB is grown as described above 6 In the method for nanowire electron emission unit, the chemical vapor deposition equipment is a tube furnace, and the tube furnace comprises:
the quartz boat is positioned at the upstream of the gas flow in the furnace tube;
growing LaB on the catalyst film layer by chemical vapor deposition 6 A nanowire electron emission unit comprising:
adding LaCl 3 Salt is placed in the quartz boat;
placing the substrate with the first film layer removed in the downstream of the gas flow in the furnace tube;
introducing BCl into the furnace tube 3 Gas, H 2 Gas and inert gas, when the temperature in the furnace tube rises to 1200 ℃, laB grows on the catalyst film layer 6 A nanowire electron emission unit.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a growing LaB 6 A method of nanowire electron emission units, the method comprising: providing a substrate; forming a first film layer on one side of the substrate, wherein the first film layer is provided with a groove of a target pattern; at the first film layer facing away from the substrateForming a catalyst film layer on one side, wherein the catalyst film layer at least fills the groove; removing the first film layer; growing LaB on the catalyst film layer 6 A nanowire electron emission unit. The growing LaB provided by the invention 6 The method for preparing nanowire electron emission unit comprises forming a first film layer with a groove of target pattern on one side of a substrate, forming a catalyst film layer on the groove, and growing LaB on the catalyst film layer 6 Nanowire electron emission unit to enable patterned growth of LaB 6 A nanowire electron emission unit; this patterned growth of LaB 6 The method of the nanowire electron emission unit can well control the nanowire structure density, so that the shielding effect of the electron emission unit is reduced, and the release of the field emission performance is obviously improved; and patterned grown LaB compared to unpatterned samples 6 The nanowire electron emission unit has a larger edge area, so that the starting voltage and the threshold voltage are effectively reduced, and the field emission current density is also remarkably improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 shows a grown LaB provided in an embodiment of the present application 6 A schematic flow diagram of a nanowire electron emission cell method;
FIG. 2 shows another LaB growth method provided in the examples of the present application 6 A flow diagram of a nanowire electron emission cell method;
FIG. 3 is a schematic diagram of a partial structure corresponding to the method of FIG. 2;
FIG. 4 is a schematic diagram of another partial structure corresponding to the method of FIG. 2;
FIG. 5 is a schematic diagram of another partial structure corresponding to the method shown in FIG. 2;
fig. 6 is a schematic structural diagram of a vacuum coating apparatus according to an embodiment of the present disclosure;
FIG. 7 is a schematic structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present disclosure;
FIG. 8 shows an exemplary LaB in an embodiment of the present application 6 Schematic top view of nanowire electron emitting units.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description thereof.
The invention provides a growing LaB 6 Method for nanowire electron emission unit capable of realizing patterned growth of LaB 6 Electron emission unit of nanowire, thereby enabling LaB 6 The nanowire electron emission unit can release excellent field emission performance.
Referring to fig. 1, fig. 1 shows a growing LaB provided in an embodiment of the present application 6 Schematic flow chart of nanowire electron emission unit method, as can be seen from fig. 1, laB growth in this application 6 The method of nanowire electron emission unit may include:
step S10, providing a substrate.
Among others, the substrate may include a common substrate such as: ITO conductive glass, silicon substrates, conductive carbon paper, etc., and the substrate should also be a clean and smooth substrate for subsequent implementation.
And S20, forming a first film layer on one side of the substrate.
Wherein the first film layerGrooves with target patterns that are custom to form LaBs 6 A pattern of nanowire electron emitting units.
And S30, forming a catalyst film layer on one side of the first film layer, which is far away from the substrate.
Wherein the catalyst film layer at least fills the groove. Optionally, in an implementation process of forming a catalyst film layer on a side of the first film layer away from the substrate, some technical means may be used to fill the catalyst film layer only in the groove during the process of forming the catalyst film layer, and the catalyst film layer is not formed on the first film layer; a catalyst film layer can also be formed on the side of the first film layer, which is far away from the substrate, without the aid of technical means, so that the catalyst film layer is filled in the groove and is also formed on the first film layer; the above-described embodiments, however, all ensure at least that the grooves are completely filled with the catalyst film layer.
And S40, removing the first film layer.
If the catalyst film layer is only filled in the groove and the catalyst film layer is not formed on the first film layer in the process of forming the catalyst film layer in the step S30, only the first film layer needs to be removed in the implementation process of removing the first film layer in the step S40; if the catalyst film layer is filled in the groove and a catalyst film layer is formed on the first film layer in the process of forming the catalyst film layer in step S30, the first film layer and the catalyst film layer on the first film layer need to be removed in the implementation process of removing the first film layer in step S40; it should be noted that the catalyst film layer on the first film layer is removed at the same time as the first film layer is removed, and it is not necessary to remove the first film layer and then remove the catalyst film layer on the first film layer or remove the catalyst film layer on the first film layer and then remove the first film layer, which makes the implementation process of removing the first film layer easier.
S50, growing LaB on the catalyst film layer 6 Nanowire electron emission units.
Wherein the grown LaB 6 The shape of the nanowire electron emission unit is completely consistent with the target pattern described in the above step S20; the target pattern can be adjusted based on different requirements, and LaB grows in the adjusted target pattern region 6 Nanowire electron emission units.
The invention provides a growing LaB 6 A method of nanowire electron emission units, the method comprising: providing a substrate; forming a first film layer on one side of the substrate, wherein the first film layer is provided with a groove of a target pattern; forming a catalyst film layer on one side of the first film layer, which is far away from the substrate, wherein the catalyst film layer at least fills the groove; removing the first film layer; growing LaB on the catalyst film layer 6 Nanowire electron emission units. The growth LaB provided by the invention 6 The method of nano-wire electron emission unit comprises forming a first film layer with a groove of target pattern on one side of a substrate, forming a catalyst film layer on the groove, and growing LaB on the catalyst film layer 6 Nanowire electron emission unit to enable patterned growth of LaB 6 A nanowire electron emission unit; this patterned growth of LaB 6 The method of the nanowire electron emission unit can well control the nanowire structure density, so that the shielding effect of the electron emission unit is reduced, and the release of the field emission performance is obviously improved; and patterned grown LaB compared to unpatterned samples 6 The nanowire electron emission unit has a larger edge area, so that the starting voltage and the threshold voltage are effectively reduced, and the field emission current density is also remarkably improved.
Optionally, in some embodiments of the present application, an implementation process of forming the first film layer on one side of the substrate in the step S20 is described, and an implementation manner of the step S20 is described in this embodiment, and the detailed scheme is as follows:
the first film layer in the first film layer formed on one side of the substrate comprisesBut not limited to, a photoresist film layer having a groove of a target pattern, which is described as a preferred embodiment in the present application, as shown in fig. 2, fig. 2 is another example of growing LaB provided in the present application 6 The flow chart of the method for the nanowire electron emission unit can specifically comprise the following steps:
and S21, coating a photoresist film layer on one side of the substrate.
Specifically, as shown in fig. 3, fig. 3 is a partial structural schematic diagram corresponding to the method shown in fig. 2, and with reference to fig. 3, the manner of coating the photoresist film layer a2 on one side of the substrate a1 includes, but is not limited to, coating the photoresist film layer a2 on one side of the substrate a1 by using a spin coater; in the implementation process of coating the photoresist film layer a2 on one side of the substrate a1 by using the spin coater, a clean and smooth substrate a1 needs to be fixed at the right center of the spin coater, the side of the substrate a1 where the photoresist film layer a2 needs to be formed faces upwards, and the photoresist film layer a2 is uniformly spin-coated on the substrate a 1.
And S22, carrying out pre-baking treatment on the photoresist film layer a2.
Specifically, the substrate a1 coated with the photoresist film layer a2 is placed on a vacuum hot plate for pre-baking treatment, so that part of the organic solvent in the photoresist film layer a2 is evaporated, and the primary curing of the photoresist is realized. The conditions of the pre-baking treatment include, but are not limited to, a baking temperature of about 100 ℃ and a baking time of about 70s, but in the embodiment of the present application, the baking temperature of 100 ℃ and the baking time of 70s are the optimal conditions of the pre-baking treatment.
And S23, carrying out exposure treatment on the photoresist film layer a2 subjected to the pre-baking treatment.
Specifically, as shown in fig. 4, fig. 4 is another partial schematic structural diagram corresponding to the method shown in fig. 2, and with reference to fig. 4, in the implementation process of performing exposure processing on the photoresist film layer a2 after the pre-baking processing, ultraviolet light is used to project the target pattern on the mask a3 onto the photoresist film layer a2 after the pre-baking processing through the optical system of the lithography machine; the target pattern on the mask plate a3 can be reduced and focused on the photoresist film layer a2 by an optical system of the photoetching machine, and when ultraviolet light irradiates the photoresist film layer a2, chemical change can be generated, so that the target pattern on the mask plate a3 is printed on the photoresist film layer a2.
And S24, removing the photoresist film layer a2 with the target pattern to form a groove with the target pattern.
Specifically, as shown in fig. 5, fig. 5 is a schematic view of another partial structure corresponding to the method shown in fig. 2, and with reference to fig. 5, the photoresist film layer a2 having the target pattern is removed with a developing solution to form a groove a4 having the target pattern.
In the embodiment of the present application, the photoresist film layer a2 is formed to serve as a protection layer for protecting the surface of the substrate a1 from being damaged, and the shape and size of the formed pattern can be precisely controlled by applying the photolithography process, so as to precisely form the groove a4 of the desired target pattern.
Optionally, in some embodiments of the present application, an implementation process of forming a catalyst film layer on a side of the first film layer facing away from the substrate a1 in the step S30 is described, and an alternative implementation manner of the step S30 is described in this embodiment, and the detailed scheme is as follows:
the manner of forming the catalyst film layer on the side of the first film layer away from the substrate a1 includes, but is not limited to, using a vacuum coating apparatus, and in this embodiment, a description is given of a preferred embodiment in which a catalyst film layer is formed on the side of the first film layer away from the substrate a1 using a vacuum coating apparatus.
As shown in fig. 6, fig. 6 is a schematic structural diagram of a vacuum coating apparatus provided in an embodiment of the present application, and details are described as follows with reference to fig. 6:
referring to fig. 6, the vacuum coating apparatus includes a chamber 01, a base 02, a fixing frame 03, a heating device 04, an evaporation boat 05, and a catalyst 06; the chamber 01 is located on the base 02, the fixing frame 03, the heating device 04 and the evaporation boat 05 are arranged in the chamber 01, the fixing frame 03 and the heating device 04 are fixed on the base 02, the evaporation boat 05 is arranged on one side of the heating device 04, which is far away from the base 02, and the catalyst 06 is arranged in the evaporation boat 05.
Specifically, a catalyst film layer is formed on one side of the first film layer, which is far away from the substrate a1, by using vacuum coating equipment, and the detailed steps are as follows:
fixing a first basic structure 07 on the fixing frame 03, wherein the first basic structure 07 comprises a substrate a1 and a first film layer located on the substrate a1, and in addition, a side of the first film layer in the first basic structure 07, which is away from the substrate a1, needs to be placed right above the evaporation boat 05; under the vacuum condition, the heating device 04 is controlled to heat the catalyst 06 in the evaporation boat 05, so as to form a catalyst film layer on the side of the first film layer, which is far away from the substrate a 1.
Wherein the vacuum degree under the vacuum condition is less than or equal to 3 x 10 -4 Pa, the evaporation boat 05 is a tungsten evaporation boat or a molybdenum evaporation boat; the vacuum degree of the vacuum coating equipment reaches 3 multiplied by 10 -4 And (3) evaporating under a high vacuum environment of Pa, and generating Joule heat by passing a large current through a tungsten evaporation boat or a molybdenum evaporation boat so as to heat the catalyst in the evaporation boat 05. When the catalyst in the evaporation boat 05 is melted and evaporated to form vapor atoms, the vapor atoms begin to deposit on the side of the first film layer away from the substrate to form a film, so that the film coating rate can be controlled by adjusting the magnitude of heating current; and sequentially evaporating a catalyst to the first film layer, wherein the catalyst film layer at least fills the groove a4.
In the embodiment of the present application, a catalyst film layer is formed on one side of the first film layer away from the substrate a1 by using a vacuum coating apparatus, and the catalyst film layer at least fills the groove a4. The catalyst film layer is formed by vacuum evaporation, the equipment is easy to operate, the film forming speed is high, the efficiency is high, the collision interference of a large number of gas molecules in the atmosphere on the movement of molecules formed in the heating and evaporating process of the catalyst can be reduced, the purity of the plated film is high, the quality is good, the adhesive force is strong, and the thickness of the film can be controlled according to actual requirements.
Optionally, in some embodiments of the present application, an implementation process of removing the first film layer in the step S40 is described, and an optional implementation manner of the step S40 is introduced in this embodiment of the present application, and a detailed scheme is as follows:
specifically, if the catalyst film layer is only filled in the groove a4 and no catalyst film layer is formed on the first film layer when the catalyst film layer is formed in the step S30, the first film layer is only washed away with acetone when the first film layer is removed, and the substrate a1 is cleaned with alcohol, deionized water, or a cleaning process of alcohol, and then dried; if the catalyst film layer is formed in the groove a4 and the catalyst film layer is formed on the first film layer in the process of forming the catalyst film layer in the step S30, the catalyst film layer on the first film layer needs to be removed while the first film layer is removed, the first film layer and the catalyst film layer on the first film layer need to be washed away by acetone, and the substrate a1 is cleaned by a cleaning process of alcohol, deionized water and alcohol, and then dried; wherein care is also taken to retain the catalyst film layer with the target pattern areas.
In the embodiment of the present application, removing the first film layer leaves only the catalyst film layer having the target pattern, so that LaB may be grown on the catalyst film layer having the target pattern 6 A nanowire electron emission unit; the first film layer and the catalyst film layer attached on the first film layer are removed, so that LaB can be prevented from growing on the catalyst film layer on the first film layer 6 The nanowire electron emission unit ensures that LaB can grow in the target pattern region accurately 6 Nanowire electron emission units.
Optionally, in some embodiments of the present application, for step S50, laB is grown on the catalyst film layer 6 The implementation process of the nanowire electron emission unit is described, and an alternative implementation manner of the step S50 is introduced in the embodiment of the present application, and the detailed scheme is as follows:
growing LaB on the catalyst film layer 6 The nanowire electron emission unit is formed by Chemical Vapor Deposition (CVD), such as growing LaB on the catalyst film layer 6 The nanowire electron emission unit is illustrated as a preferred embodiment.
Fig. 7 is a schematic structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present application, and the detailed description is provided below with reference to fig. 7:
referring to fig. 7, the chemical vapor deposition apparatus is a tube furnace including: a furnace tube 08 and a quartz boat 09 positioned in the gas flow upstream in the furnace tube; in fig. 7, the position of the arrow is an inlet through which gas is introduced into the furnace tube 08, and the direction indicated by the arrow is the direction in which gas flows in the furnace tube 08.
Specifically, laB is grown on the catalyst film layer by chemical vapor deposition 6 The nanowire electron emission unit comprises the following detailed steps:
adding LaCl 3 Salt is placed in the quartz boat 09; placing a second base structure 10 downstream of the gas flow in the furnace tube 08, the second base structure 10 including a substrate a1 and a catalyst film layer on the substrate a1, the catalyst film layer being a catalyst film layer having the target pattern; evacuating the furnace tube 08 to 10 -3 Torr, pure hydrogen is let into the furnace tube 08, and then the pressure is kept at 0.1atm in the hydrogen atmosphere; continuously introducing inert gas into the furnace tube 08, and introducing BCl when the furnace tube 08 is heated to 1200 DEG C 3 Gas, high temperature will cause LaCl 3 Vaporization of salt, thereby causing BCl 3 With LaCl 3 Reacting to grow LaB on the catalyst film layer 6 A nanowire electron emission unit; wherein the flow rate of the introduced gas is 0.1-1L/min.
Specifically, referring to fig. 8, fig. 8 is a LaB according to an example of the embodiment of the present application 6 Top view schematic diagram of nanowire electron emission unit, with reference to fig. 8, the present application provides a grown LaB 6 The method of nanowire electron emission unit finally forms LaB as shown in FIG. 8 on the substrate a1 6 Nanowire electron emission unit, whereinComprises a substrate a1 and a LaB on the substrate a1 6 Nanowire electron-emitting unit of LaB 6 The structural pattern of the nanowire electron emission units is illustrated in a heart-shaped pattern, an exemplary LaB in fig. 8 6 The nanowire electron emission units are controllably grown on the region of the heart-shaped pattern; optionally, the LaB 6 The structural pattern of the nanowire electron emission unit includes, but is not limited to, the heart-shaped pattern illustrated in fig. 8, and the structural pattern may be adjusted according to different requirements, and it is required to ensure that LaB is grown in the region where the structural pattern is located 6 Nanowire electron emission units.
In the examples of the present application, laB was grown on the catalyst film layer by chemical vapor deposition 6 The nanowire electron emission unit can obtain a film with high purity, good compactness, good crystallization and strong adhesive force due to mutual diffusion of reaction gas, reaction products and a matrix, and the spatial distribution of molecules is more uniform when chemical vapor deposition is carried out, thereby being beneficial to forming a smooth deposition surface.
The growth LaB provided by the invention 6 The method of the nanowire electron emission unit is described in detail, and the principle and the embodiment of the present invention are explained by applying specific examples, and the description of the above examples is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. Growth LaB 6 A method of nanowire electron emission units, the method comprising:
providing a substrate;
forming a first film layer on one side of the substrate, wherein the first film layer is provided with a groove of a target pattern;
forming a catalyst film layer on one side of the first film layer, which is far away from the substrate, wherein the catalyst film layer at least fills the groove;
removing the first film layer;
growing LaB on the catalyst film layer 6 Nanowire electron emission units.
2. A growth according to claim 1LaB 6 The method for nanowire electron emission unit, wherein the first film is a photoresist film, and the first film is formed on one side of the substrate and has a groove of a target pattern, comprising:
and forming the photoresist film layer on one side of the substrate, wherein the photoresist film layer is provided with a groove of a target pattern.
3. A grown LaB according to claim 1 6 The method for nanowire electron emission unit, wherein a catalyst film layer is formed on a side of the first film layer away from the substrate, and the catalyst film layer at least fills the groove, comprises:
and forming a catalyst film layer on one side of the first film layer, which is far away from the substrate, by using vacuum coating equipment, wherein the catalyst film layer at least fills the groove.
4. A grown LaB according to claim 3 6 A method of nanowire electron emission units, the vacuum coating apparatus comprising:
a base and a chamber located on the base; the fixing frame is positioned in the cavity and fixed on the base; the heating device is positioned in the cavity and fixed on the base; the evaporation boat is positioned on one side of the heating device, which is far away from the base;
forming a catalyst film layer on one side of the first film layer, which is far away from the substrate, by using vacuum coating equipment, wherein the method comprises the following steps:
fixing the substrate with the first film layer on the fixing frame, and putting a catalyst into the evaporation boat, wherein the first film layer is positioned right above the evaporation boat;
and under the vacuum condition, controlling the heating device to heat the evaporation boat so as to form a catalyst film layer on one side of the first film layer, which is far away from the substrate.
5. A grown LaB according to claim 4 6 Nano meterMethod for manufacturing a line electron emission unit, characterized in that the degree of vacuum under vacuum is less than or equal to 3 x 10 -4 Pa。
6. A grown LaB according to claim 4 6 The method for the nanowire electron emission unit is characterized in that the evaporation boat is a tungsten evaporation boat or a molybdenum evaporation boat.
7. A grown LaB according to claim 1 6 The method for preparing nanowire electron emission units is characterized in that LaB grows on the catalyst film layer 6 A nanowire electron emission unit comprising:
growing LaB on the catalyst film layer by chemical vapor deposition 6 Nanowire electron emission units.
8. A grown LaB according to claim 7 6 Method for nanowire electron emission elements, characterized in that the chemical vapor deposition apparatus is a tube furnace comprising:
the quartz boat is positioned at the upstream of the gas flow in the furnace tube;
growing LaB on the catalyst film layer by chemical vapor deposition 6 A nanowire electron emission unit comprising:
adding LaCl 3 Salt is placed in the quartz boat;
placing the substrate with the first film layer removed in the downstream of the gas flow in the furnace tube;
introducing BCl into the furnace tube 3 Gas, H 2 Gas and inert gas, when the temperature in the furnace tube rises to 1200 ℃, laB grows on the catalyst film layer 6 Nanowire electron emission units.
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| CN202210998741.8A CN115223828A (en) | 2022-08-19 | 2022-08-19 | Growing LaB 6 Method of nanowire electron emission unit |
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| CN117464155A (en) * | 2023-12-28 | 2024-01-30 | 合肥国镜仪器科技有限公司 | Nanowire welding method and welding device |
| CN117464155B (en) * | 2023-12-28 | 2024-03-15 | 合肥国镜仪器科技有限公司 | Nanowire welding method and welding device |
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