CN115219058A - Method for measuring cavity surface temperature of semiconductor laser - Google Patents
Method for measuring cavity surface temperature of semiconductor laser Download PDFInfo
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- CN115219058A CN115219058A CN202110433780.9A CN202110433780A CN115219058A CN 115219058 A CN115219058 A CN 115219058A CN 202110433780 A CN202110433780 A CN 202110433780A CN 115219058 A CN115219058 A CN 115219058A
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/12—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance
- G01K11/125—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance using changes in reflectance
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Abstract
The invention belongs to the technical field of semiconductor lasers; in the traditional cavity surface catastrophe optical damage research, the change of reflectivity is used for monitoring the development condition of cavity surface damage and the detection of temperature change, the direct measurement of the reflectivity change quantity is lacked, and the temperature change cannot be accurately measured.
Description
Technical Field
The invention relates to a semiconductor laser, in particular to a method for measuring the cavity surface temperature of the semiconductor laser.
Background
Most experimental methods for COD research rely on temperature measurements, particularly facet temperature measurements when the laser is operating, in order to obtain the facet critical temperature at which damage occurs. In addition, in the study of measuring the recombination velocity of the surface state when the laser is operated, data on the temperature change of the damaged area is also required. In the conventional method of measuring the lattice temperature using raman spectroscopy, phonon rays required for measuring the temperature may not be extracted, resulting in errors in the measurement results. The thermal imaging technology is used for detecting Planck radiation and measuring temperature, and the application range is relatively small. In order to solve the problems of complex and expensive instruments and equipment, complex algorithm and the like and meet the research requirement of the cavity surface damage of the high-speed laser chip, a highly integrated and automatic measuring instrument needs to be developed, so that the measuring instrument has comprehensive measurement, damage modeling and damage prediction capabilities, and a measuring and analyzing instrument is provided for theoretical research, system construction and development of related equipment in the field of high-speed optical communication. This patent has designed cavity surface temperature detection module, measures through the change to the cavity surface reflectivity, realizes real-time, the high-speed temperature change condition that detects the damage emergence in-process.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a method for measuring the cavity surface temperature of a semiconductor laser, and the technical problem to be solved by the invention is how to accurately measure the cavity surface temperature of the laser, so that the time resolution reaches 2ns, and the development process of the laser cavity surface damage can be accurately simulated with high resolution.
In order to achieve the purpose, the invention provides the following technical scheme:
a method for measuring the cavity surface temperature of a semiconductor laser comprises the following steps of separating a test light beam into a reference light beam and a test light beam through a polarization beam splitter, focusing the reflected test light beam and the reference light beam on a differential detector through a second polarization beam splitter, measuring a difference signal obtained through measurement of a phase-locked amplifier, measuring the variation of reflectivity, and calculating the cavity surface temperature variation value, wherein the method specifically comprises the following steps:
s1, providing a detection laser beam by an optical fiber coupling laser diode, transmitting the detection laser beam to a first port of a circulator through an optical fiber, and outputting the detection laser beam from a second port 2;
s2, after the detection laser beam is filtered by a filter, the first polarization beam splitter separates the detection laser beam into a reference beam and a test beam, and the reference beam enters a differential detector;
s3, after being reflected by the chip, the test light beam carrying cavity surface temperature information is gathered on the differential detector through the second polarization beam splitter, enters the second port of the circulator through the first bias beam splitter and the filter, is output through the third port of the circulator and enters the photoelectric detector to measure the current I of the test light beam 2 And reading the current I by an oscilloscope 2 ；
S4, inputting a differential signal of a detected chip of the differential detector into the lock-in amplifier, and calculating the variation delta R of the reflectivity;
s5, calculating relative change delta R/R of the reflectivity according to the change delta R of the reflectivity acquired in the step S4, wherein R is the reflectivity of the sample mean value, and according to a functional relation delta R f /R＝κ△T f And calculating the temperature variation delta T.
Further, in step S4, the differential detector detects that the differential signal is I = I when the chip under test is not detected 1 -I 2 R 0 Wherein, I 1 Is the current of the reference beam, I 2 For measuring beam current, R 0 Is the laser cavity surface reflectivity at room temperature; the differential detector detects a differential signal of the detected chip as
Further, in step S4, the change amount Δ R of the reflectance is calculated by the following formula:
wherein, Δ R 0 Is the dc reflectivity change caused by the dc dissipated power; delta R f Is the change in reflectivity due to dissipated power at frequency f;
is a thermal phase shift at frequency fThe high frequency term includes reflectivity variations due to power dissipation at high frequencies.
Further, in step S5, the relative change Δ R/R of the reflectance is calculated by the following formula:
wherein, k is the heat reflection coefficient of the material and the wavelength of the detection light wave.
In conclusion, the invention has the following beneficial effects:
the invention realizes real-time and high-speed detection of temperature change condition in the damage occurrence process by measuring the reflectivity change of the cavity surface by utilizing the functional relation between the reflectivity of the cavity surface of the laser and the temperature of the cavity surface. Reliable basis and reference are provided for scientific researches such as structure improvement, process improvement and the like of a high-speed laser chip; the test light beam is separated into a reference light beam and a test light beam through the PBS, the test light beam after reflection is focused on the differential detector together with the reference light beam through the second polarization beam splitter, the obtained differential signal is measured by the phase-locked amplifier, the variation of the reflectivity is measured, and the cavity surface temperature variation value is further calculated. Compared with other cavity surface temperature measuring methods, the differential detector can avoid possible input saturation of the phase-locked amplifier, eliminate experimental noise sources which can influence reference and reflected light beams, and realize higher measuring precision.
Drawings
FIG. 1 is a flow chart of the present invention.
In the figure: 1-the first port of the circulator, 2-the second port of the circulator, and 3-the third port of the circulator.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 1, the present invention discloses a method for measuring cavity surface temperature of a semiconductor laser, which separates a test beam into a reference beam and a test beam through a Polarization Beam Splitter (PBS), the test beam after reflection is focused on a differential detector through a second PBS, a difference signal obtained by measuring a phase-locked amplifier is used to measure a variation of reflectivity, and a cavity surface temperature variation value is calculated, and the method specifically includes the following steps:
s1, providing a detection laser beam by an optical fiber coupling laser diode, transmitting the detection laser beam to a first port of a circulator through an optical fiber, and outputting the detection laser beam from a second port 2.
S2, after the detection laser beam is filtered by the filter, the first polarization beam splitter separates the detection laser beam into a reference beam and a test beam, and the reference beam enters the differential detector.
S3, after being reflected by the chip, the test light beam carrying cavity surface temperature information is gathered on the differential detector through the second polarization beam splitter, enters the second port of the circulator through the first bias beam splitter and the filter, and enters the photoelectric detector to measure the test light beam current I after being output through the third port of the circulator 2 And the current I is read by an oscilloscope 2 。
S4, inputting a differential signal of a detected chip of the differential detector into the lock-in amplifier, and calculating the variation delta R of the reflectivity; the whole reflectivity is recorded as R, then R = R 0 + Δ R, wherein R 0 The reflectivity of the cavity surface of the laser at room temperature and the reflectivity change of delta R caused by temperature change; when the differential detector detects that no chip is detected, the differential signal is I = I 1 -I 2 R 0 Wherein, I 1 Is the current of the reference beam, I 2 For measuring beam current, R 0 Is the laser cavity reflectivity at room temperature; sending the obtained differential signal driven by the pulse driving current into a phase-locked loop, and adjusting the phase-locked loop to ensure that the differential signal is driven by the pulse driving current
To obtain I' = I-I 2 △R f (iv) 2, the Δ R can be obtained f (ii) a The differential detector detects a differential signal of the detected chip as
In step S4, the change Δ R of the reflectance is calculated by the following formula:
wherein, Δ R 0 Is the dc reflectivity change caused by the dc dissipated power; delta R f Is the change in reflectivity due to dissipated power at frequency f;
is the thermal phase shift at frequency f, the high frequency term includes the reflectivity change due to power dissipation at high frequencies.
S5, calculating relative change delta R/R of the reflectivity according to the change delta R of the reflectivity acquired in the step S4, wherein R is the reflectivity of the sample mean value, and according to a functional relation delta R f /R＝κ△T f And calculating the temperature variation delta T.
A current source is used to bias the diode and is connected to a voltage generator to modulate the drive current at a 50% duty cycle from 0.1mA to I max To change between. I.C. A max The regulation range is between 6mA and 1A. The variation in the drive current thus causes a temperature variation Δ T. Thus, the relative change Δ R/R of the reflectivity is calculated by the following formula:
wherein, k is the heat reflection coefficient of the material and the wavelength of the detection light wave.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (4)
1. A method for measuring the cavity surface temperature of a semiconductor laser is characterized in that: the method comprises the following steps of separating a test light beam into a reference light beam and a test light beam through a polarization beam splitter, focusing the reflected test light beam on a differential detector together with the reference light beam through a second polarization beam splitter, measuring a differential signal obtained through a phase-locked amplifier, measuring the variation of reflectivity, and calculating the cavity surface temperature variation value, and specifically comprises the following steps:
s1, providing a detection laser beam by an optical fiber coupling laser diode, transmitting the detection laser beam to a first port of a circulator through an optical fiber, and outputting the detection laser beam from a second port 2;
s2, after the detection laser beam is filtered by a filter, the first polarization beam splitter separates the detection laser beam into a reference beam and a test beam, and the reference beam enters a differential detector;
s3, after being reflected by the chip, the test light beam carrying cavity surface temperature information is gathered on the differential detector through the second polarization beam splitter, enters the second port of the circulator through the first bias beam splitter and the filter, and enters the photoelectric detector to measure the test light beam current I after being output through the third port of the circulator 2 And the current I is read by an oscilloscope 2 ；
S4, inputting a differential signal of a detected chip of the differential detector into the phase-locked amplifier, and calculating the variation quantity delta R of the reflectivity;
s5, calculating relative change delta R/R of the reflectivity according to the change delta R of the reflectivity acquired in the step S4, wherein R is the reflectivity of the sample mean value, and according to a functional relation delta R f /R＝κ△T f And calculating the temperature variation quantity delta T.
2. A method of semiconductor laser facet temperature measurement according to claim 1, wherein: in step S4, the differential detector detects that the differential signal is I = I when the chip under test is not detected 1 -I 2 R 0 Wherein, I 1 Is for referenceCurrent of the light beam, I 2 For measuring beam current, R 0 Is the laser cavity reflectivity at room temperature; the differential detector detects a differential signal of the detected chip as
3. A method of semiconductor laser facet temperature measurement according to claim 1, wherein: in step S4, the change Δ R of the reflectance is calculated by the following formula:
wherein, Δ R 0 Is the dc reflectivity change caused by the dc dissipated power; delta R f Is the change in reflectivity due to dissipated power at frequency f;
is the thermal phase shift at frequency f, the high frequency term includes the reflectivity change due to power dissipation at high frequencies.
4. A method of semiconductor laser facet temperature measurement according to claim 1, wherein: in step S5, the relative change Δ R/R of the reflectivity is calculated by the following formula:
wherein, k is the heat reflection coefficient of the material and the wavelength of the detection light wave.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110433780.9A CN115219058A (en) | 2021-04-20 | 2021-04-20 | Method for measuring cavity surface temperature of semiconductor laser |
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| CN202110433780.9A CN115219058A (en) | 2021-04-20 | 2021-04-20 | Method for measuring cavity surface temperature of semiconductor laser |
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| CN115219058A true CN115219058A (en) | 2022-10-21 |
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| CN202110433780.9A Pending CN115219058A (en) | 2021-04-20 | 2021-04-20 | Method for measuring cavity surface temperature of semiconductor laser |
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